CN110277307A - A kind of process preparing single side high brightness sour piece - Google Patents
A kind of process preparing single side high brightness sour piece Download PDFInfo
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- CN110277307A CN110277307A CN201910453435.4A CN201910453435A CN110277307A CN 110277307 A CN110277307 A CN 110277307A CN 201910453435 A CN201910453435 A CN 201910453435A CN 110277307 A CN110277307 A CN 110277307A
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- 238000000034 method Methods 0.000 title abstract description 27
- 230000008569 process Effects 0.000 title abstract description 22
- 239000002253 acid Substances 0.000 claims abstract description 54
- 230000007797 corrosion Effects 0.000 claims abstract description 46
- 238000005260 corrosion Methods 0.000 claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- 238000000227 grinding Methods 0.000 claims abstract description 42
- 239000007788 liquid Substances 0.000 claims abstract description 20
- 238000012545 processing Methods 0.000 claims abstract description 14
- 238000010008 shearing Methods 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 5
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 16
- 238000012360 testing method Methods 0.000 description 11
- 239000010410 layer Substances 0.000 description 8
- 238000005498 polishing Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 206010054949 Metaplasia Diseases 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Abstract
The present invention provides a kind of processes for preparing single side high brightness sour piece, include the following steps: that (1) single shear is ground: shearing grinding is carried out using one of surface of the abrasive grinding wheel to twin grinding piece, being ground removal amount is 10-20 μm, obtains single side abrasive sheet；(2) acid corrosion: acid corrosion is carried out to the single side abrasive sheet that step (1) obtains using acid corrosion liquid, obtains single side high brightness sour piece.The present invention increases single shear compared with conventional processing routes and is ground this process, it is different that single shear grinding realizes the brightness of sour piece tow sides, one-side finish degree is prepared after acid corrosion is greater than 98% greater than 360Gs, reflectivity, the lesser sour piece of roughness, it ensure that requirement, polished silicon wafer is substituted, cost has been saved.
Description
Technical field
The invention belongs to the processing technique fields that semiconductor material silicon single crystal and silicon wafer etc. produce piece, more particularly, to a kind of system
The process of standby silicon single crystal single side high brightness etched sheet.
Background technique
In the high-end applications of current silicon-based semiconductor material mostly based on silicon polished, the key step of polished silicon wafer is prepared
Are as follows: monocrystal rod, cutting, round as a ball, slice, chamfering, grinding, burn into polishing and cleaning, packaging etc..Silicon chip surface after wherein polishing
With high flatness and cleanliness, lattice is complete, can apply in all kinds of new high-tech industries, meet different type
Semiconductor material and device needs.But polishing process is to the precision of equipment, processing environment, polishing fluid, polishing cloth, change
Product purity packing box and packaging bag etc. have higher technique requirement, have the characteristics that cost of manufacture height and production cycle are long,
Polishing cost is approximately 6-10 times or so of chemical attack cost under normal circumstances.
Abrasive sheet and intermediate products-etched sheet of polished silicon wafer are with it compared with abrasive sheet more preferably performance, lower compared with polished silicon wafer
The features such as cost and short processing industry chain, is using more and more extensive.In the fields such as thyristor, silicon-controlled in order to realize automatic metaplasia
It produces or when lithographic focus reduces energy consumption, (note: roughness described in this paper is equal to silicon chip surface brightness (reflectivity) and roughness
Refer to roughness Ra) there is particular/special requirement, but not high, the cost if using polished silicon wafer is required to the other parameters of silicon chip surface
It is higher, it is difficult to meet requirement again using ordinary silicon chip.
With silicon single crystal flake processing technology progress, several companies are able to achieve sour piece surface gloss and are greater than in industry
320GS's stably produces.But the glossiness of the silicon single crystal etched sheet for thyristor field reaches 360GS or more (reflectivity
98%) it is just able to satisfy the automation needs of production when, stably reaches 360Gs (reflectivity by traditional grinding and etching process
Greater than the surface gloss more than 98%) there are still great difficulty, traditional process, which almost cannot achieve, to be stably produced.And
It is general only to have strict demand to front side of silicon wafer (working face) and in thyristor field, it is typically no to silicon chip back side special to want
It asks, but traditional acid corrosion processing method is mostly two-sided corrosion.
Therefore, consider from production cost and processing process etc., the glossiness for developing single side reaches 360Gs (instead
The etched sheet that rate is greater than more than 98%) is penetrated, the pass that etched sheet substitution polished silicon wafer is applied to thyristor automated production field is become
Key problem.
Summary of the invention
In view of this, the present invention is directed to propose a kind of process for preparing single side high brightness sour piece, provides a kind of new
Type process route: slice-grinding-single shear grinding-acid corrosion, the process route increase compared with conventional processing routes
Single shear is ground this process, and single shear grinding realizes sour piece tow sides brightness difference, prepares after acid corrosion
One-side finish degree is greater than 360Gs, reflectivity is greater than 98%, and the lesser sour piece of roughness ensure that requirement, substitution polishing
Piece has saved cost.
In order to achieve the above objectives, the technical scheme of the present invention is realized as follows:
A kind of process preparing single side high brightness sour piece, includes the following steps:
(1) single shear is ground: being carried out shearing grinding using one of surface of the abrasive grinding wheel to twin grinding piece, is ground
Cutting removal amount is 10-20 μm, obtains single side abrasive sheet；
(2) acid corrosion: acid corrosion is carried out to the single side abrasive sheet that step (1) obtains using acid corrosion liquid, obtains single side height
Brightness sour piece.
Specifically, shearing grinding refers to that abrasive grinding wheel rotates, and the workbench for fixed placement abrasive sheet drives abrasive sheet
Rotation, the direction of rotation of the two is ground on the contrary.Increase single shear grinding and single side is carried out to one of surface of abrasive sheet
After mechanical reduction, abrasive sheet surface state changes, and product appearance is originally silicon ash color, and surface gloss is less than 10Gs, slightly
Rugosity is between 0.25-0.35 μm.One of surface of abrasive sheet becomes bright after single shear is ground this process,
Glossiness can achieve 370Gs, and roughness is at 0.05-0.1 μm.Acid corrosion is carried out after completing single shear grinding, by above
Method can prepare the different sour piece of tow sides surface state.By adjusting the technological parameter and acid of single shear grinding
Etch process parameters, can steadily prepare one-side finish degree can achieve 360Gs, high reflectance of the roughness less than 0.1 μm
Sour piece, and the trace that single shear can be ground removes, and is not generally visible under fluorescent light.
Further, the mesh number of abrasive grinding wheel described in step (1) is 2000#-8000#, rotation speed 150-
250rpm, rotation speed 1800-2200rpm.
Further, grinding removal amount described in step (1) is 13-17 μm.
Further, acid corrosion liquid described in step (2) be mixed acid solution, the mixed acid solution by HF solution,
HNO3Solution, CH3COOH solution mixing system is at the concentration of HF solution is 40-50wt%, HNO3The concentration of solution is 65-
70wt%, CH3The concentration of COOH solution is 95-99.5wt%, HF solution, HNO3Solution, CH3The volume ratio of COOH solution is (1-
1.2): (3.6-4): (1.8-2).
Further, the acid corrosion liquid service life described in step (2) is that highest handles 50,000 single side abrasive sheets.
Further, the temperature of acid corrosion described in step (2) is 28 DEG C -32 DEG C, time 60-80s, acid corrosion removal
Amount for 40-60 μm/it is two-sided.
Further, the glossiness for the sour piece that step (2) obtains reaches 360Gs or more, and roughness is 0.02-0.1 μm.
Further, silicon single crystal slice and grinding are successively carried out before step (1).
By adopting the above technical scheme, silicon single crystal is cut, then carries out grinding to obtain abrasive sheet.Then silicon wafer is carried out
Single shear grinding is cleaned after single shear grinding, then carries out acid corrosion, can prepare positive back by above method
The different sour piece of face surface state.
Further, after the processing of every step, cleaning and drying process is added.
Main function principle of the invention are as follows:
Preferable sour piece surface gloss is obtained, other than having higher requirements to etch process parameters, before acid corrosion
The surface state such as silicon chip surface roughness, damaging layer, glossiness parameter has a direct impact silicon chip surface state after acid corrosion, because
It is steady production surface gloss that how this, which obtains than abrasive sheet surface roughness, damaging layer and the better silicon chip surface of glossiness,
Greater than the key of 360Gs (reflectivity is greater than 98%) product.
Abrasive grit acts on silicon chip surface, the surface damage of abrasive sheet by the pressure perpendicular of mill during silicon chip grinding
Hurt layer in 10-15 μm/single side, it is suitable with the partial size of abrasive grit；Abrasive sheet surface layer becomes broken crystallization under perpendicular acting
Layer, surface gloss are less than 10Gs, and for surface roughness between 0.25-0.4 μm, damaging layer and roughness are all higher.
Single shear grinding process is to be ground using high-speed rotating 2000# abrasive grinding wheel to silicon chip surface, acts on and grinds
The power of blade surface is cross shear.Silicon wafer is being ground after 13-17 μm of shearing grinding on one of surface of abrasive sheet
The surface damage layer formed during mill removes, and silicon chip surface becomes bright, and glossiness reaches 370Gs, and roughness is in 0.02-
It is 1-2 μm/single side by shearing damaged layer on surface of silicon slice after grinding in 0.1 μ m；The table of silicon wafer after shearing grinding
Face parameter is substantially better than the surface parameter of abrasive sheet, is conducive to produce surface gloss greater than 360Gs (reflectivity is greater than 98%)
Product.
Compared with the existing technology, a kind of process preparing single side high brightness sour piece of the present invention has following
Advantage:
1, the present invention has prepared single side high brightness sour piece, has realized sour by single shear grinding and acid corrosion
The brightness of piece tow sides is different, and simple process not only saves polishing and subsequent cleaning operation, also evaded the matter of two-sided high brightness
Amount is superfluous, has saved cost and working hour, and product processing performance is guaranteed, and can be realized and stably produces.
2, the sour piece that the present invention obtains reaches the mirror status of high brightness, and glossiness is greater than 360Gs, and (reflectivity is greater than
98%), roughness is 0.02-0.1 μm, and glossiness and roughness index are better than traditional high brightness sour piece.
3, the present invention is ground using single shear, reduces the thickness of damaged layer on surface of silicon slice, and acid corrosion removal amount is 40-
60 μm/two-sided, and the acid corrosion removal amount of traditional high brightness product be 90 μm/it is two-sided, the present invention save silicon single crystal major ingredient at
Sheet and chemical cost extend the acid corrosion liquid service life.
Detailed description of the invention
Fig. 1 is the relational graph of sour piece glossiness and acid corrosion liquid service life；
Fig. 2 is the relationship of sour piece roughness and acid corrosion liquid service life.
Specific embodiment
In addition to being defined, technical term used in following embodiment has universal with those skilled in the art of the invention
The identical meanings of understanding.Test reagent used in following embodiment is unless otherwise specified conventional chemical reagent；It is described
Experimental method is unless otherwise specified conventional method.
Below with reference to embodiment, the present invention will be described in detail.
Embodiment
Technological preparation:
1, experiment slice prepares: the molten twin grinding piece in 6 cun of areas, 150 ± 0.2mm of diameter, thickness: 550 ± 5 μm, resistivity:
Quantity: 300 twin grinding pieces 300, are divided into 5 groups, every group 60 by 60-80 Ω cm.
2, test equipment: vancometer, amesdial, fluorescent lamp, microscope；
3, main process apparatus and tooling: milling drum, 2000# abrasive grinding wheel, sour machine, cleaning machine；
4, acid corrosion liquid: hydrofluoric acid solution: nitric acid solution: acetum=1:4:1.8 (volume ratio)；Wherein hydrofluoric acid is molten
HF content is 49%wt, HNO in nitric acid solution in liquid3Content is 70%wt, CH in acetum3COOH content is 99.5%wt.
5, acid corrosion temperature: 30 ± 2 DEG C；
The process for preparing single side high brightness sour piece is as follows:
1) single shear is ground, and grinding removal amount is 13-17 μm, and the rotation speed of abrasive grinding wheel is 150rpm, abrasive sheet
Rotation speed be 1800rpm；
2) five groups of silicon wafers carry out acid corrosion under 5 kinds of acid corrosion liquid life conditions respectively, and acid corrosion removal amount is 40 μm/it is bis-
Sour piece is made in face, time 60s.
Five kinds of acid corrosion liquid service life are respectively as follows: processing silicon wafer quantity less than 1000, are denoted as acid 1；Processing silicon wafer quantity is
10000 ± 500, it is denoted as acid 2；Processing silicon wafer quantity is 30000 ± 500, is denoted as acid 3；Process silicon wafer quantity be 50000 ±
500, it is denoted as acid 4；Processing silicon wafer quantity is 70000 ± 500, is denoted as acid 5.
3) 2 progress acid corrosions of every component, corrosion 30 every time, and the 1st is chosen respectively, and the 15th, the 30th sour
The test of piece progress glossiness and roughness.The data of 6 sour pieces of every group of total test, are recorded as 1#, 2#, 3#, 4# respectively,
5#, 6#.
Test example
Glossiness test: using the glossiness of the MN-60 vancometer test sour piece high brightness side, test point difference
Centered on point, 4 points at edge 10mm, then take 5 average values；
Roughness test: the coarse of the sour piece high brightness side is tested under the conditions of 20 times using VK-9700 microscope
Degree, test point is respectively central point, 4 points at edge 10mm, takes 5 average values；
Test result:
Five groups of twin grinding pieces respectively under 5 kinds of sour process conditions sour piece obtained gloss value such as 1 institute of table
Show.
The glossiness of 1 sour piece of table and the tables of data in acid corrosion liquid service life
Five groups of twin grinding pieces respectively under 5 kinds of sour process conditions sour piece obtained gloss value such as 1 institute of table
Show.
The roughness of 2 sour piece of table and the tables of data in acid corrosion liquid service life
The glossiness of every group of 6 sour pieces and coarseness data are averaged, wherein glossiness and acid corrosion liquid longevity
The relationship of life is shown in Fig. 1, and roughness and the relationship in acid corrosion liquid service life are shown in Fig. 2.As seen from Figure 1, Figure 2, with the acid corrosion liquid service life
Increase, glossiness is gradually lowered to 352.33Gs from 369.83Gs, and roughness is increased to 0.069 μm from 0.030 μm, that is,
It says, as the acid corrosion liquid service life is progressively longer, the quality of sour piece is gradually reduced.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (9)
1. a kind of process for preparing single side high brightness sour piece, characterized by the following steps:
(1) single shear is ground: carrying out shearing grinding using one of surface of the abrasive grinding wheel to twin grinding piece, grinding is gone
Except amount is 10-20 μm, single side abrasive sheet is obtained；
(2) acid corrosion: acid corrosion is carried out to the single side abrasive sheet that step (1) obtains using acid corrosion liquid, obtains single side high brightness
Sour piece.
2. a kind of process for preparing single side high brightness sour piece according to claim 1, it is characterised in that: step
(1) mesh number of abrasive grinding wheel described in is 2000#-8000#, rotation speed 150-250rpm, rotation speed 1800-
2200rpm。
3. a kind of process for preparing single side high brightness sour piece according to claim 1, it is characterised in that: step
(1) grinding removal amount described in is 13-17 μm.
4. a kind of process for preparing single side high brightness sour piece according to claim 2, it is characterised in that: step
(2) acid corrosion liquid described in is mixed acid solution, and the mixed acid solution is by HF solution, HNO3Solution, CH3The mixing of COOH solution
It is made, the concentration of HF solution is 40-50wt%, HNO3The concentration of solution is 65-70wt%, CH3The concentration of COOH solution is 95-
99.5wt%, HF solution, HNO3Solution, CH3The volume ratio of COOH solution is (1-1.2): (3.6-4): (1.8-2).
5. a kind of process for preparing single side high brightness sour piece according to claim 1, it is characterised in that: step
(2) service life of acid corrosion liquid described in is that highest handles 50,000 single side abrasive sheets.
6. a kind of process for preparing single side high brightness sour piece according to claim 1, it is characterised in that: step
(2) temperature of acid corrosion described in be 28 DEG C -32 DEG C, time 60-80s, acid corrosion removal amount be 40-60 μm/it is two-sided.
7. a kind of process for preparing single side high brightness sour piece according to claim 1, it is characterised in that: step
(2) glossiness of the sour piece obtained reaches 360Gs or more, and roughness is 0.02-0.1 μm.
8. a kind of process for preparing single side high brightness sour piece according to claim 1, it is characterised in that: in step
(1) silicon single crystal slice and grinding are successively carried out before.
9. a kind of process for preparing single side high brightness sour piece according to any one of claims 1 to 8, feature
It is: after the processing of every step, cleaning and drying process is added.
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| CN201910453435.4A CN110277307B (en) | 2019-05-28 | 2019-05-28 | Process method for preparing single-side high-brightness sour bean curd slices |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112692650A (en) * | 2020-12-23 | 2021-04-23 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Processing method of optical spherical surface |
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