CN110275393A - A kind of photoresist applied to double light beam laser - Google Patents
A kind of photoresist applied to double light beam laser Download PDFInfo
- Publication number
- CN110275393A CN110275393A CN201910415066.XA CN201910415066A CN110275393A CN 110275393 A CN110275393 A CN 110275393A CN 201910415066 A CN201910415066 A CN 201910415066A CN 110275393 A CN110275393 A CN 110275393A
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- China
- Prior art keywords
- photoresist
- beam laser
- light beam
- light
- irgacure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Polymerisation Methods In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a kind of photoresists applied to double light beam laser, which is characterized in that including photoinitiator, light inhibitor and monomer, the molar amount of photoresist is accounted for each component, photoinitiator is 0.1%~5%, and light inhibitor is 0.1%~2%, and monomer is 93%~99.8%.The present invention keeps made photoresist colorless and transparent by using the light inhibitor of IRGACURE photoinitiator and thiurams, and avoiding photoresist color in the prior art has unnecessary light absorption；Meanwhile when double light beam laser is irradiated the photoresist, the problem of avoiding photoinitiator and light inhibitor cross absorption, it is improved the resolution ratio of double light beam laser direct write.
Description
Technical field
The present invention relates to photoetching technique, especially a kind of photoresist applied to double light beam laser.
Background technique
In the manufacturing process of large scale integrated circuit, photoetching technique is most important work in fine-line showing methods
Skill determines the minimum feature size of this chip, accounts for the 40%-50% of chip manufacturing time.Market minimizes semiconductor product,
The requirement of functional diversities is higher and higher, and this requires the fine degrees of photoetching process to be continuously improved, and fine degree is specifically led
Be embodied in two aspects: first is the characteristic size of manufactured pattern and structure, such as manufactured pattern and structure middle line
Line footpath；Second is the characteristic density of manufactured pattern and structure, for example, in manufactured pattern and structure two it is physically separated
The centre distance of straight line.
In photolithography process, photoresist is the critical material that photoetching process is achieved selective etch.In document
Reported the photoresist applied to dual-beam, the photoinitiator being often used is BDCC mix reagent, this is after a kind of synthesis in dark
Brick-red substance, its presence make configured photoresist be also that presentation is brick-red；But for photoetching process, color
Presence meeting so that solution makes troubles there are unnecessary light absorption to manufacturing process.In addition, the manufacture light used in document
It is the femtosecond laser of 800nm, initiator realizes the polymerization of photoresist by two-photon absorption, by light inhibitor tetraethyl base
Thiuram absorbs the light of 375nm, inhibits photoresist polymerization to realize；But initiator is in 375nm wave band that there are still can not
The absorption ignored, i.e. prior art the phenomenon that there are cross absorptions, it will affect the feature ruler of double light beam laser direct write in this way
Very little and resolution ratio.Therefore to solve the problems, such as that above-mentioned existing photoresist exists in a photolithographic process, need to propose a kind of new photoetching
Glue.
Summary of the invention
The object of the present invention is to provide a kind of photoresists applied to double light beam laser, for solving in the prior art
Photoresist has color and there are problems that cross absorption.
In order to solve the above technical problems, the present invention provides a kind of photoresist applied to double light beam laser, feature exists
In, including photoinitiator, light inhibitor and monomer account for the molar amount of photoresist with each component, photoinitiator is 0.1%~
5%, light inhibitor is 0.1%~2%, and monomer is 93%~99.8%.
Preferably, photoinitiator includes IRGACURE-250, IRGACURE-907, IRGACURE-184, IRGACURE-
369, any one in IRGACURE-819, IRGACURE-784.
Preferably, light inhibitor is one or more mixtures of thiurams.
Preferably, monomer includes 1,6- hexanediyl, pentaerythritol tetraacrylate, trimethylolpropane tris third
Olefin(e) acid ester, two-trimethylolpropane tetra-acrylates, three (2- ethoxy) isocyanuric acid triacrylates, dipentaerythritol five
One of acrylate or a variety of mixtures.
Preferably, using manufacture light and inhibit light composition double light beam laser to be applied to double light beam laser photoresist into
Row photoetching.
Preferably, a length of 470~570nm of light wave is manufactured, a length of 350~390nm of light wave is inhibited.
The beneficial effects of the present invention are: being in contrast to the prior art, the present invention draws by using IRGACURE class light
The light inhibitor for sending out agent and thiurams, keeps made photoresist colorless and transparent, avoids photoresist color in the prior art
There are problems that unnecessary light absorption；Meanwhile when double light beam laser is irradiated the photoresist, avoid photoinitiator and
The problem of light inhibitor cross absorption, is improved the resolution ratio of double light beam laser direct write.
Specific embodiment
Below in conjunction with the embodiment of the present invention, technical scheme in the embodiment of the invention is clearly and completely described,
Obviously, described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based in the present invention
Embodiment, every other embodiment obtained by those of ordinary skill in the art without making creative efforts,
Belong to the scope of protection of the invention.
Photoresist in the present invention applied to double light beam laser includes photoinitiator, light inhibitor and monomer, with each component
Accounting for the molar amount of photoresist, photoinitiator is 0.1%~5%, and light inhibitor is 0.1%~2%, monomer is 93%~
99.8%.
Specifically, the selection of each component substance is described in detail.Photoinitiator includes IRGACURE-250, IRGACURE-
907, any one in IRGACURE-184, IRGACURE-369, IRGACURE-819, IRGACURE-784, can be according to reality
Border needs the photoinitiator for selecting to be adapted with lithography laser wavelength, is not limited thereto；The effect of photoinitiator is to inhale
Receive radiation energy, occur chemical change after manufacture light excitation, generating has the reactive intermediate species for causing polymerizing energy, be by
Excitation portion is cured.Light inhibitor is one or more mixtures of thiurams, will not be by after the irradiation of inhibited light
It excites and is cured, inhibit the part of light not solidify to make to exist.Using IRGACURE photoinitiator and thiuram
The light inhibitor of class keeps made photoresist colorless and transparent, and avoiding photoresist color in the prior art, there are unnecessary light
The problem of absorption.
Monomer include 1,6- hexanediyl, pentaerythritol tetraacrylate, trimethylolpropane trimethacrylate,
Two-trimethylolpropane tetra-acrylates, three (2- ethoxy) isocyanuric acid triacrylates, Dipentaerythritol Pentaacrylate
One of or a variety of mixtures；Monomer is the main body of photoresist, is a kind of photosensitive resin that molecular weight is relatively low, has
It can carry out the group of photocuring reaction, such as all kinds of unsaturated double-bonds or epoxy group；Preferably contain esters of acrylic acid in the present invention
Substance as monomer, after polymerization reaction occurs due to this kind of monomer, not carbon-carbon double bonds in polyacrylate backbone, so it
With good thermal oxidation resistance effect, to improve the stability of photoresist.
In the present invention, using manufacture light and inhibit the double light beam laser of light composition to the photoresist for being applied to double light beam laser
Carry out photoetching, it is preferred that the manufacture a length of 470~570nm of light wave inhibits a length of 350~390nm of light wave；It is different from the prior art
In generally using 800nm femtosecond laser to conventional lithography glue carry out photoetching the case where, the present invention using manufacture light and inhibit light
The double light beam laser of composition is irradiated above-mentioned photoresist, and avoid photoinitiator and light inhibitor has at Same Wavelength
The situation significantly absorbed, that is, the problem of avoiding photoinitiator and light inhibitor cross absorption, so that photoinitiator and light be made to press down
Preparation targetedly absorbs optical maser wavelength, and then photoetching resolution is made to get a promotion.Wherein, both manufacture light and inhibition light
Specific wavelength need to the specific choice of aforementioned photoinitiators and light inhibitor be adapted, do not do be described in detail one by one herein.
It is as follows about the photoresist configuration method for being applied to double light beam laser in the present invention: by photoinitiator, light inhibitor
It is dissolved in chloroform or acetone and other organic solvent with monomer according to the mixing of default molar ratio, after completely dissolution to it, is vacuum-treated
Remove chloroform or acetone and other organic solvent, that is, completes the preparation of the photoresist for being applied to double light beam laser；Wherein, with default
Molar amount, photoinitiator are 0.1%~5%, and light inhibitor is 0.1%~2%, and monomer is 93%~99.8%.
Embodiment 1
Take the analytically pure Dipentaerythritol Pentaacrylate of 10mL, 0.163g IRGACURE-250 and 0.097g two
Tetraethylthiuram sulfide mixing is dissolved in acetone, and after completely dissolution to it, acetone is removed in heating or vacuum processing, that is, completing should
It is prepared by the photoresist applied to double light beam laser；The photoresist prepared is uniformly coated to substrate, with double light beam laser pair
Photoresist is irradiated, wherein manufacture optical wavelength range is 470~570nm, and inhibition optical wavelength range is 350~390nm, is led to
It crosses AFM and morphology characterization is carried out to the surface after photoetching, and on vertical plane direction, record multiple groups single line resolution ratio, line spacing are divided
The data of resolution and depth, the results are shown in Table 1, it can be seen that after carrying out photoetching to photoresist of the invention using dual-beam, institute
It obtains linear resolution and is respectively less than 50nm, line space resolution is respectively less than 100nm, and depth is located at 40nm or so；And it generallys use existing
The method that 800nm femtosecond laser carries out photoetching to conventional lithography glue in technology, it is difficult to reach 100nm resolution ratio below, therefore say
Bright the present invention program can effectively increase the mechanical strength of photoresist.
Table 1
| Test number (TN) | Single line resolution ratio/nm | Line space resolution/nm | Depth/nm |
| 1 | 25.8 | 68.0 | 40.6 |
| 2 | 16.8 | 77.2 | 42.1 |
| 3 | 22.5 | 84.5 | 45.5 |
| 4 | 18.2 | 60.5 | 37.2 |
| 5 | 20.0 | 66.3 | 39.5 |
It is in contrast to the prior art, the present invention presses down by using the light of IRGACURE photoinitiator and thiurams
Preparation keeps made photoresist colorless and transparent, avoids photoresist color asking there are unnecessary light absorption in the prior art
Topic；Meanwhile when double light beam laser is irradiated the photoresist, asking for photoinitiator and light inhibitor cross absorption is avoided
Topic, is improved the resolution ratio of double light beam laser direct write.
Embodiments of the present invention above described embodiment only expresses, the description thereof is more specific and detailed, but can not
Therefore it is construed as limiting the scope of the patent.It should be pointed out that for those of ordinary skill in the art,
Under the premise of not departing from present inventive concept, various modifications and improvements can be made, and these are all within the scope of protection of the present invention.
Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (6)
1. a kind of photoresist applied to double light beam laser, which is characterized in that including photoinitiator, light inhibitor and monomer, with
Each component accounts for the molar amount of photoresist, and photoinitiator is 0.1%~5%, and light inhibitor is 0.1%~2%, monomer 93%
~99.8%.
2. the photoresist according to claim 1 applied to double light beam laser, which is characterized in that the photoinitiator includes
IRGACURE-250、IRGACURE-907、IRGACURE-184、IRGACURE-369、IRGACURE-819、IRGACURE-784
In any one.
3. the photoresist according to claim 1 applied to double light beam laser, which is characterized in that the light inhibitor is the autumn
One or more mixtures of blue nurse class.
4. the photoresist according to claim 1 applied to double light beam laser, which is characterized in that the monomer includes 1,6-
Hexanediyl, pentaerythritol tetraacrylate, trimethylolpropane trimethacrylate, two-trimethylolpropanes 4 third
One of olefin(e) acid ester, three (2- ethoxy) isocyanuric acid triacrylates, Dipentaerythritol Pentaacrylate are a variety of mixed
Close object.
5. the photoresist according to claim 1 applied to double light beam laser, which is characterized in that using manufacture light and inhibition
The double light beam laser of light composition carries out photoetching to the photoresist applied to double light beam laser.
6. the photoresist according to claim 5 applied to double light beam laser, which is characterized in that the manufacture light wave is a length of
470~570nm inhibits a length of 350~390nm of light wave.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910415066.XA CN110275393A (en) | 2019-05-17 | 2019-05-17 | A kind of photoresist applied to double light beam laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910415066.XA CN110275393A (en) | 2019-05-17 | 2019-05-17 | A kind of photoresist applied to double light beam laser |
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| Publication Number | Publication Date |
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| CN110275393A true CN110275393A (en) | 2019-09-24 |
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| CN201910415066.XA Pending CN110275393A (en) | 2019-05-17 | 2019-05-17 | A kind of photoresist applied to double light beam laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112172136A (en) * | 2020-08-03 | 2021-01-05 | 广东工业大学 | Moth compound eye bionic optical device based on super-resolution laser radiation and 3D printing method and application thereof |
Citations (6)
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|---|---|---|---|---|
| CN1578930A (en) * | 2001-09-13 | 2005-02-09 | 英法塞技术公司 | Environmentally durable, self-sealing optical articles |
| WO2009075233A1 (en) * | 2007-12-10 | 2009-06-18 | Kaneka Corporation | Alkali-developable curable composition, insulating thin film using the same, and thin film transistor |
| CN103984211A (en) * | 2014-05-08 | 2014-08-13 | 中国科学院光电技术研究所 | Dual beam polymerization initiation and inhibition-based high resolution imaging lithography method |
| CN105922587A (en) * | 2016-05-19 | 2016-09-07 | 深圳长朗三维科技有限公司 | Continuous light curing three-dimensional printing equipment and use method thereof |
| CN105924571A (en) * | 2016-05-19 | 2016-09-07 | 深圳长朗三维科技有限公司 | Continuous photo-curing three-dimensional printing material |
| US20180004086A1 (en) * | 2016-06-29 | 2018-01-04 | Chi Mei Corporation | Negative photosensitive resin composition, production method of spacer, production method of protection film, and liquid crystal display device |
-
2019
- 2019-05-17 CN CN201910415066.XA patent/CN110275393A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1578930A (en) * | 2001-09-13 | 2005-02-09 | 英法塞技术公司 | Environmentally durable, self-sealing optical articles |
| WO2009075233A1 (en) * | 2007-12-10 | 2009-06-18 | Kaneka Corporation | Alkali-developable curable composition, insulating thin film using the same, and thin film transistor |
| CN103984211A (en) * | 2014-05-08 | 2014-08-13 | 中国科学院光电技术研究所 | Dual beam polymerization initiation and inhibition-based high resolution imaging lithography method |
| CN105922587A (en) * | 2016-05-19 | 2016-09-07 | 深圳长朗三维科技有限公司 | Continuous light curing three-dimensional printing equipment and use method thereof |
| CN105924571A (en) * | 2016-05-19 | 2016-09-07 | 深圳长朗三维科技有限公司 | Continuous photo-curing three-dimensional printing material |
| US20180004086A1 (en) * | 2016-06-29 | 2018-01-04 | Chi Mei Corporation | Negative photosensitive resin composition, production method of spacer, production method of protection film, and liquid crystal display device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112172136A (en) * | 2020-08-03 | 2021-01-05 | 广东工业大学 | Moth compound eye bionic optical device based on super-resolution laser radiation and 3D printing method and application thereof |
| CN112172136B (en) * | 2020-08-03 | 2022-07-05 | 广东工业大学 | Moth compound eye bionic optical device based on super-resolution laser radiation and 3D printing method and application thereof |
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Application publication date: 20190924 |
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