CN103984211A - Dual beam polymerization initiation and inhibition-based high resolution imaging lithography method - Google Patents
Dual beam polymerization initiation and inhibition-based high resolution imaging lithography method Download PDFInfo
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- CN103984211A CN103984211A CN201410192957.0A CN201410192957A CN103984211A CN 103984211 A CN103984211 A CN 103984211A CN 201410192957 A CN201410192957 A CN 201410192957A CN 103984211 A CN103984211 A CN 103984211A
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Abstract
The invention provides a dual beam polymerization initiation and inhibition-based high resolution imaging lithography method. The method mainly comprises the following steps: 1, selecting or preparing a photoresist containing a polymerization initiator responding to laser of different wavelengths and a polymerization inhibitor; 2, selecting a corresponding polymerization initiation laser and a corresponding polymerization inhibition laser; 3, making two masks with the mask graphs having same or similar shapes and dimensions; 4, carrying out beam combination imaging on a mask 1 and a mask 2 in a same plane through a dichroic mirror and a lens under the action of polymerization inhibition and polymerization initiation laser, and allowing the obtained image to partially overlap in a space; and 5, placing a photoresist sample containing the polymerization initiator and the polymerization inhibitor on the imaging plane, and exposing and developing to obtain a high resolution imaging lithography graph. The method has the advantages of high lithography resolution, high machining efficiency and the like, and has a very broad application prospect in the field of the high-efficiency and low-cost nanometer processing exceeding diffraction limit.
Description
Technical field
The present invention relates to technical field of lithography, be specifically related to a kind of high-resolution imaging photoetching method that causes and suppress based on twin-beam polymerization.
Background technology
The miniaturization of device and the integrated trend of the times that has become device development, this has just proposed more and more higher requirement to modern microelectronics photoetching process.But the existence of diffraction limit makes traditional optical imagery lithography process technology run into bottleneck on processing resolving power.How further improving processing resolving power, it is reached and even surmount diffraction limit is the focus that in worldwide, microelectronic industry endeavours to solve research always.
In recent years, the process technology that a kind of two-photon is directly write is suggested, and by the non-linear absorption of near infrared ultra-short pulse laser excitation material, makes the resolving power of processing the highlyest can reach tens nanometers, has greatly surmounted diffraction limit.In addition, 2009, the Liang Ge research group of the U.S. has almost proposed the laser direct-writing technology that a kind of twin-beam polymerization causes and suppresses simultaneously, this technology ultimate principle is exactly the polymerization that utilization a kind of lasing light emitter wherein excites photoresist, and another beam of laser suppresses the polymerization of photoresist, their focus is overlapping on focal plane, design the focal spot shapes of Inhibition of polymerization laser beam by the method for position phase mask, make overlapping exposure area photoresist not produce polymerization, thereby realize the processing resolving power that surmounts diffraction limit.
Although but the method for above two kinds of laser direct-writings processing can make lithographic line width surmount diffraction limit, direct-write photoetching just exists long processing time principle, inefficient shortcoming, makes it very restricted in extensive making is produced.The microelectronics photoetching process of main flow is all the mode that adopts imaging and photo-etching substantially at present.How the technology that surmounts diffraction limit under same optical maser wavelength being combined with traditional imaging and photo-etching, is to comprise that at present industry member and academia all endeavour a research direction of research thereby obtain a kind of job operation fast and efficiently that surmounts diffraction limit.
The present invention relates to the laser beam that a kind of employing two bundles can cause respectively and suppress photoresist polymerization, be irradiated to respectively on two same or analogous masks of figure, and adopt image-forming objective lens, make the mask graph of different Ear Mucosa Treated by He Ne Laser Irradiations submit and build up picture at photoresist, thereby realize the high-level efficiency that surmounts diffraction limit, nanofabrication technique cheaply.
Summary of the invention
The problem to be solved in the present invention is: the process velocity existing in the high-resolution direct-write photoetching technology for existing twin-beam polymerization initiation and inhibition is slower, the shortcoming that working (machining) efficiency is not high, propose a kind of method of utilizing the overlapping imaging of dual masks version twin-beam, when obtaining surmounting diffraction limit live width, realize the rapidly and efficiently lithography process method of processing.
The technical solution adopted for the present invention to solve the technical problems is:
A high-resolution imaging photoetching method that causes and suppress based on twin-beam polymerization, is characterized in that comprising the following steps:
Step (1), select or configure a kind of suitable photoresist, in photoresist, need to contain polymerization initiator and polymerization inhibitor etc., and the excitation laser wavelength that polymerization initiator works with polymerization inhibitor being different;
Step (2), select suitable polymerization to cause LASER Light Source, its corresponding wavelength can make the polymerization initiator in photoresist work, thereby makes photoresist polymerization;
Step (3), select suitable Inhibition of polymerization LASER Light Source, its corresponding wavelength can make the polymerization inhibitor in photoresist work, thereby suppresses the polymerization of photoresist;
Step (4), collimate with the emerging beam that two collimation lenses cause laser instrument and Inhibition of polymerization laser instrument to polymerization respectively;
Step (5), two metallic masks of making, its mask graph shape and size are same or similar;
Step (6), polymerization cause laser optical path and Inhibition of polymerization laser optical path closes bundle by dichroic mirror, and the figure scioptics of mask 1 and mask 2 are imaged in same imaging plane, and imaging spatially part is overlapping;
Step (7), will contain polymerization initiator, the photoresist sample of polymerization inhibitor is placed on imaging plane and exposes, and after having exposed, sample is developed, and obtains high-resolution imaging and photo-etching figure.
Photoresist in described step (1) comprises polymerization single polymerization monomer, as triethylene glycol dimethacrylate;
Photoresist in described step (1) comprises polymerization initiator, and as camphorquinone and ethyl-4 (dimethylamino) benzoic ether, corresponding wavelength photoreceptor is blue light;
Photoresist in described step (1) comprises polymerization inhibitor, and as tetraethylthiuram disulfide, wavelength photoreceptor is ultraviolet wavelength.
In described step (2), polymerization initiation LASER Light Source is the diode pumping solid laser of outgoing blue light.
Inhibition of polymerization LASER Light Source in described step (3) is the Argon ion laser of outgoing ultraviolet light.
The figure of two metallic masks in described step (5) is the figure that needs processing, as periodic optical grating etc.
Two masks in described step (6) are overlapping by object lens imaging generating portion, and the large I of overlapping region is controlled by mobile mask.
Exposure light source in described step (7) is that two LASER Light Source are exposed simultaneously.
The present invention causes and directly writing compared with process technology of suppressing has advantages of based on twin-beam polymerization with traditional: the present invention adopts twin-beam to carry out once the mode of overlapping imaging exposure photo-etching to having same or analogous mask graph, realizes the graphics processing that surmounts efficiently diffraction limit resolving power.Process velocity of the present invention is fast, and working (machining) efficiency is high, realizes the processing resolving power that surmounts diffraction limit simultaneously, and in micro-nano structure processing, as the processing of high-level efficiency photon crystal structure, the fields such as super materials processing, have a very big significance and potential application prospect.
Brief description of the drawings
Fig. 1 is the schematic diagram of the high-resolution imaging photoetching method based on twin-beam polymerization initiation and inhibition;
Fig. 2 is that the mask graph of mask M1 and mask M2 is L shaped schematic diagram;
Fig. 3 is the overlapping imaging schematic diagram of mask M1 and mask M2; Wherein: A is the imaging region of mask M1 figure; B is the imaging region of mask M2 figure;
Fig. 4 is that the mask graph of mask M1 and mask M2 is the L shaped actual figure that is exposed;
Fig. 5 is that the mask graph of mask M1 and mask M2 is circular schematic diagram;
Fig. 6 is the overlapping imaging schematic diagram of mask M1 and mask M2; Wherein: C is the imaging region of mask M1 figure; D is the imaging region of mask M2 figure;
Fig. 7 is that the mask graph of mask M1 and mask M2 is the circular actual figure that is exposed.
Embodiment
Introduce in detail the present invention below in conjunction with the drawings and the specific embodiments.But following embodiment only limits to explain the present invention, and protection scope of the present invention should comprise the full content of claim, and by following examples, those skilled in the art can realize the full content of the claims in the present invention.
Embodiment 1:
As shown in Figure 1, polymerization being caused to laser instrument, beam expander L1 and mask M1 coaxially places; Inhibition of polymerization laser instrument, beam expander L2 and mask M2 are coaxially placed simultaneously; Article two, light path is closed bundle by dichroic mirror DM (Dichroic Mirrors claims again dichroic mirror); The figure of mask M1 and mask M2 carries out imaging by imaging len.
The mask graph of getting mask M1 and mask M2 is L shaped, and measure-alike, as shown in Figure 2.Control light path and mask position, make two masks after lens L3 imaging in same imaging plane, and have certain overlapping, as shown in Figure 3.In figure A be mask M1 under Inhibition of polymerization laser instrument condition of incidence through lens imaging, to be mask M2 cause under laser instrument condition of incidence through lens imaging in polymerization B.
The photoresist that contains polymerization initiator and polymerization inhibitor is spin-coated in silicon base, and be placed on the imaging plane at mask M1 and mask M2 place and expose, by controlling, polymerization causes laser and Inhibition of polymerization swashs light intensity, make the photoresist of the imaging overlapping region of mask M1 and mask M2 not produce polymerization, thereby only have non-overlapping exposure area, the photoresist in the B region in Fig. 3 produces polymerization.(thereby only have the photoresist of non-overlapping exposure area to produce polymerization.) the actual exposure live width that therefore the obtains imaging line reductions that is mask M2 the live width of going itself and mask M1 imaging overlapping region to obtain, as shown in Figure 4.Adopt the method, by changing the image space of arbitrary mask, and increase the imaging overlapping region of two masks, in principle, can realize the graph exposure of arbitrarily small live width, thereby realize the litho pattern processing that surmounts diffraction limit.
Embodiment 2:
As shown in Figure 1, polymerization being caused to laser instrument, beam expander L1 and mask M1 coaxially places; Inhibition of polymerization laser instrument, beam expander L2 and mask M2 are coaxially placed simultaneously; Article two, light path is closed bundle by dichroic mirror DM (Dichroic Mirrors claims again dichroic mirror); The figure of mask M1 and mask M2 carries out imaging by imaging len.
Get the mask graph of mask M1 and mask M2 for circular, and measure-alike, as shown in Figure 5.Control light path and mask position, make two masks after lens L3 imaging in same imaging plane, and have certain overlapping, as shown in Figure 6.In figure C be mask M1 under Inhibition of polymerization laser instrument condition of incidence through lens imaging, to be mask M2 cause under laser instrument condition of incidence through lens imaging in polymerization D.
The photoresist that contains polymerization initiator and polymerization inhibitor is spin-coated in silicon base, and be placed on the imaging plane at mask M1 and mask M2 place and expose, by controlling, polymerization causes laser and Inhibition of polymerization swashs light intensity, make the photoresist of the imaging overlapping region of mask M1 and mask M2 not produce polymerization, thereby only have non-overlapping exposure area, the photoresist in the B region in Fig. 3 produces polymerization.(thereby only have the photoresist of non-overlapping exposure area to produce polymerization.) the actual exposure region that therefore the obtains imaging figure that is mask M2 deducts the region that itself and mask M1 imaging overlapping region obtain, as shown in Figure 7.Adopt the method, by changing the image space of arbitrary mask, thereby increase or reduce the imaging overlapping region of two masks, can realize the processing of " moon " type structure of different size.And by increasing the imaging overlapping region of two masks, can realize in principle " moon " the type structure processing that surmounts diffraction limit.
Claims (9)
1. a high-resolution imaging photoetching method that causes and suppress based on twin-beam polymerization, its feature comprises the following steps:
Step (1), select or configure a kind of suitable photoresist, in photoresist, need to contain polymerization initiator and polymerization inhibitor, and the excitation laser wavelength that polymerization initiator works with polymerization inhibitor being different;
Step (2), select suitable polymerization to cause LASER Light Source, its corresponding wavelength can make the polymerization initiator in photoresist work, thereby makes photoresist polymerization;
Step (3), select suitable Inhibition of polymerization LASER Light Source, its corresponding wavelength can make the polymerization inhibitor in photoresist work, thereby suppresses the polymerization of photoresist;
Step (4), collimate with the emerging beam that collimation lens L1 and collimation lens L2 cause laser instrument and Inhibition of polymerization laser instrument to polymerization respectively;
Step (5), two metallic masks of making, mask 1 (M1) and mask 2 (M2), its mask graph shape and size are same or similar;
Step (6), polymerization cause laser optical path and Inhibition of polymerization laser optical path closes bundle by dichroic mirror (DM), the figure scioptics of mask 1 and mask 2 are imaged in same imaging plane, and imaging spatially part is overlapping;
Step (7), will contain polymerization initiator, the photoresist sample (S) of polymerization inhibitor is placed on imaging plane and exposes, and after having exposed, sample is developed, and obtains high-resolution imaging and photo-etching figure.
2. a kind of high-resolution imaging photoetching method that causes and suppress based on twin-beam polymerization according to claim 1, is characterized in that: the photoresist in described step (1) comprises polymerization single polymerization monomer, as triethylene glycol dimethacrylate.
3. a kind of high-resolution imaging photoetching method that causes and suppress based on twin-beam polymerization according to claim 1, it is characterized in that: the photoresist in described step (1) comprises polymerization initiator, as camphorquinone and ethyl-4 (dimethylamino) benzoic ether, corresponding wavelength photoreceptor is blue light.
4. a kind of high-resolution imaging photoetching method that causes and suppress based on twin-beam polymerization according to claim 1, it is characterized in that: the photoresist in described step (1) comprises polymerization inhibitor, as tetraethylthiuram disulfide, wavelength photoreceptor is ultraviolet wavelength.
5. a kind of high-resolution imaging photoetching method that causes and suppress based on twin-beam polymerization according to claim 1, is characterized in that: in described step (2), polymerization initiation LASER Light Source is the diode pumping solid laser of outgoing blue light.
6. a kind of high-resolution imaging photoetching method that causes and suppress based on twin-beam polymerization according to claim 1, is characterized in that: the Inhibition of polymerization LASER Light Source in described step (3) is the Argon ion laser of outgoing ultraviolet light.
7. a kind of high-resolution imaging photoetching method that causes and suppress based on twin-beam polymerization according to claim 1, is characterized in that: the figure of two metallic masks in described step (5) is the figure of needs processing, as periodic optical grating.
8. a kind of high-resolution imaging photoetching method that causes and suppress based on twin-beam polymerization according to claim 1, it is characterized in that: two masks in described step (6) are overlapping by object lens imaging generating portion, and the large I of overlapping region is controlled by mobile mask.
9. a kind of high-resolution imaging photoetching method that causes and suppress based on twin-beam polymerization according to claim 1, is characterized in that: the exposure light source in described step (7) is that two LASER Light Source are exposed simultaneously.
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| CN108279550A (en) * | 2018-01-08 | 2018-07-13 | 武汉舒博光电技术有限公司 | A kind of dual-beam micronano optical manufacturing method |
| CN110262193A (en) * | 2019-05-17 | 2019-09-20 | 华中科技大学 | A kind of light beam alignment system and method applied to dual-beam photoetching |
| CN110275393A (en) * | 2019-05-17 | 2019-09-24 | 华中科技大学 | A kind of photoresist applied to double light beam laser |
| CN110286560A (en) * | 2019-05-17 | 2019-09-27 | 华中科技大学 | A kind of mask plate manufacturing method applied to double light beam laser photoetching |
| CN110554577A (en) * | 2019-07-19 | 2019-12-10 | 暨南大学 | System and method for laser direct writing micro-nano structure based on single wavelength and double light beams |
| CN110967931A (en) * | 2018-09-30 | 2020-04-07 | 上海微电子装备（集团）股份有限公司 | Exposure apparatus and exposure method |
| CN111880383A (en) * | 2020-09-11 | 2020-11-03 | 华中科技大学 | High-density photoetching pattern processing method |
| CN112034691A (en) * | 2020-10-10 | 2020-12-04 | 华中科技大学 | Device and method for shading complementary light intensity mask plate double-beam projection lithography |
| WO2020244088A1 (en) * | 2019-06-05 | 2020-12-10 | Tcl华星光电技术有限公司 | Display device and manufacturing method therefor |
| CN113156773A (en) * | 2021-03-31 | 2021-07-23 | 华中科技大学 | Cooperative absorption double-beam super-resolution lithography system and method |
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| CN108279550B (en) * | 2018-01-08 | 2021-07-27 | 武汉舒博光电技术有限公司 | Double-beam micro-nano optical manufacturing method |
| CN110967931A (en) * | 2018-09-30 | 2020-04-07 | 上海微电子装备（集团）股份有限公司 | Exposure apparatus and exposure method |
| CN110262193B (en) * | 2019-05-17 | 2021-03-30 | 华中科技大学 | Light beam alignment system and method applied to double-light beam lithography |
| CN110262193A (en) * | 2019-05-17 | 2019-09-20 | 华中科技大学 | A kind of light beam alignment system and method applied to dual-beam photoetching |
| CN110275393A (en) * | 2019-05-17 | 2019-09-24 | 华中科技大学 | A kind of photoresist applied to double light beam laser |
| CN110286560A (en) * | 2019-05-17 | 2019-09-27 | 华中科技大学 | A kind of mask plate manufacturing method applied to double light beam laser photoetching |
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| CN110554577A (en) * | 2019-07-19 | 2019-12-10 | 暨南大学 | System and method for laser direct writing micro-nano structure based on single wavelength and double light beams |
| CN110554577B (en) * | 2019-07-19 | 2021-10-22 | 暨南大学 | System and method for laser direct writing micro-nano structure based on single wavelength and double light beams |
| CN111880383A (en) * | 2020-09-11 | 2020-11-03 | 华中科技大学 | High-density photoetching pattern processing method |
| CN112034691A (en) * | 2020-10-10 | 2020-12-04 | 华中科技大学 | Device and method for shading complementary light intensity mask plate double-beam projection lithography |
| CN113156773A (en) * | 2021-03-31 | 2021-07-23 | 华中科技大学 | Cooperative absorption double-beam super-resolution lithography system and method |
| CN113156773B (en) * | 2021-03-31 | 2024-02-09 | 华中科技大学 | Cooperative absorption double-beam super-resolution lithography system and method |
| WO2023071192A1 (en) * | 2021-10-26 | 2023-05-04 | 之江实验室 | Super-resolution high-speed laser direct-write lithography method and apparatus based on parallel interpenetration |
| CN114153123A (en) * | 2021-12-10 | 2022-03-08 | 中国科学院光电技术研究所 | Photoresist composition and application thereof |
| CN114153123B (en) * | 2021-12-10 | 2023-09-19 | 中国科学院光电技术研究所 | Photoresist composition and application thereof |
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