CN103984211B - A kind of high-resolution imaging photoetching method causing based on twin-beam polymerization and suppress - Google Patents
A kind of high-resolution imaging photoetching method causing based on twin-beam polymerization and suppress Download PDFInfo
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Abstract
The invention provides a kind of based on twin-beam polymerization cause and suppress high-resolution imaging photoetching method, key step is: (1) is selected or configured a kind of photoresist, its contain to different wave length laser response polymerization initiator and polymerization inhibitor; (2) corresponding polymerization is selected to cause laser instrument and Inhibition of polymerization laser instrument; (3) make two masks, its mask graph shape and size are all same or similar; (4) mask 1 and mask 2 are under Inhibition of polymerization and polymerization cause the effect of laser, and close bundle by dichroic mirror and lens and be imaged in same plane, imaging spatially part is overlapping; (5) will containing polymerization initiator, the photoresist sample of polymerization inhibitor is placed on imaging plane and carries out exposing and developing, and obtains high-resolution imaging and photo-etching figure.It is high that the present invention has photoetching resolution, working (machining) efficiency advantages of higher, and surmounting the high-level efficiency of diffraction limit, low cost technical field of nano-processing has great application prospect.
Description
Technical field
The present invention relates to technical field of lithography, be specifically related to a kind of high-resolution imaging photoetching method causing based on twin-beam polymerization and suppress.
Background technology
The miniaturization of device and the integrated trend of the times having become device development, this just proposes more and more higher requirement to modern microelectronic photoetching process.But the existence of diffraction limit, make traditional optical imagery lithographic process technologies encounter bottleneck on processing resolving power.How improving processing resolving power further, making it reach and even surmounting diffraction limit is the focus that in worldwide, microelectronic industry endeavours to solve research always.
In recent years, the process technology that a kind of two-photon is directly write is suggested, and by the non-linear absorption of near infrared ultra-short pulse laser excitation material, makes the resolving power processed the highlyest can reach tens nanometers, has greatly surmounted diffraction limit.In addition, 2009, the Liang Ge research group of the U.S. almost proposes the laser writing technology of a kind of twin-beam polymerization initiation and suppression simultaneously, this technology ultimate principle is exactly that utilization a kind of lasing light emitter is wherein to excite the polymerization of photoresist, and another beam of laser suppresses the polymerization of photoresist, their focus is overlapping on focal plane, the focal spot shapes of Inhibition of polymerization laser beam is designed by the method for phase-only pupil filter, make territory, overlapped exposure region photoresist not produce polymerization, thus realize the processing resolving power surmounting diffraction limit.
Although but the method for above two kinds of laser direct-writings processing can make lithographic line width surmount diffraction limit, direct-write photoetching just exists long processing time principle, inefficient shortcoming, make it very restricted in extensive making is produced.The microelectronics photoetching process of current main flow is all the mode adopting imaging and photo-etching substantially.How the technology surmounting diffraction limit under same optical maser wavelength is combined with traditional imaging and photo-etching, thus to obtain a kind of job operation fast and efficiently surmounting diffraction limit be comprise the research direction that industry member and academia all endeavour to study at present.
The present invention relates to the laser beam that a kind of employing two bundles can cause respectively and suppress photoresist to be polymerized, be irradiated on two same or analogous masks of figure respectively, and adopt image-forming objective lens, make different sharp light-struck mask graph overlapping imaging on a photoresist, thus realize the high-level efficiency surmounting diffraction limit, the nanofabrication technique of low cost.
Summary of the invention
The problem to be solved in the present invention is: be polymerized the process velocity existed in the high-resolution direct-write photoetching technology caused and suppress for existing twin-beam slower, the shortcoming that working (machining) efficiency is not high, propose a kind of method utilizing the overlapping imaging of dual masks version twin-beam, while obtaining surmounting diffraction limit live width, realize the photolithographic process rapidly and efficiently processed.
The technical solution adopted for the present invention to solve the technical problems is:
Based on the high-resolution imaging photoetching method that twin-beam polymerization causes and suppresses, it is characterized in that comprising the following steps:
Step (1), select or configure a kind of suitable photoresist, need containing polymerization initiator and polymerization inhibitor etc. in photoresist, and the excitation laser wavelength that polymerization initiator and polymerization inhibitor work being different;
Step (2), select suitable polymerization to cause LASER Light Source, its corresponding wavelength can make the polymerization initiator in photoresist work, thus photoresist is polymerized;
Step (3), select suitable Inhibition of polymerization LASER Light Source, its corresponding wavelength can make the polymerization inhibitor in photoresist work, thus suppresses the polymerization of photoresist;
Step (4), respectively the emerging beam that polymerization causes laser instrument and Inhibition of polymerization laser instrument to be collimated with two collimation lenses;
Step (5), making two metallic masks, its mask graph shape and size are same or similar;
Step (6), polymerization cause laser optical path and Inhibition of polymerization laser optical path and carry out by dichroic mirror conjunctions and restraint, and the figure scioptics of mask 1 and mask 2 are imaged in same imaging plane, and imaging spatially part is overlapping;
Step (7), will containing polymerization initiator, the photoresist sample of polymerization inhibitor is placed on imaging plane and exposes, and after having exposed, develops to sample, obtains high-resolution imaging and photo-etching figure.
Photoresist in described step (1) comprises polymerization single polymerization monomer, as triethylene glycol dimethacrylate;
Photoresist in described step (1) comprises polymerization initiator, and as camphorquinone and ethyl-4 (dimethylamino) benzoic ether, corresponding wavelength photoreceptor is blue light;
Photoresist in described step (1) comprises polymerization inhibitor, and as tetraethylthiuram disulfide, wavelength photoreceptor is ultraviolet wavelength.
In described step (2), polymerization causes the diode pumping solid laser that LASER Light Source is outgoing blue light.
Inhibition of polymerization LASER Light Source in described step (3) is the Argon ion laser of outgoing ultraviolet light.
The figure of two metallic masks in described step (5) is the figure needing processing, as periodic optical grating etc.
Two masks in described step (6) are overlapping by object lens imaging generating portion, and the size of overlapping region controls by mobile mask.
Exposure light source in described step (7) is that two LASER Light Source expose simultaneously.
The present invention with traditional based on twin-beam be polymerized cause and suppress directly write the advantage had compared with process technology: the present invention adopts twin-beam to the mode having same or analogous mask graph and carry out once overlapping Imagewise exposure photoetching, realizes the graphics processing surmounting diffraction limit resolving power efficiently.Process velocity of the present invention is fast, and working (machining) efficiency is high, realizes the processing resolving power surmounting diffraction limit simultaneously, and in micro-nano structure processing, as the processing of high-level efficiency photon crystal structure, Meta Materials processing and other fields, has a very big significance and potential application prospect.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the high-resolution imaging photoetching method causing based on twin-beam polymerization and suppress;
The schematic diagram of Fig. 2 to be the mask graph of mask M1 and mask M2 be L shape;
Fig. 3 is the overlapping imaging schematic diagram of mask M1 and mask M2; Wherein: A is the imaging region of mask M1 figure; B is the imaging region of mask M2 figure;
Fig. 4 is the mask graph of mask M1 and mask M2 is that the actual of L shape is exposed figure;
Fig. 5 is the mask graph of mask M1 and mask M2 is circular schematic diagram;
Fig. 6 is the overlapping imaging schematic diagram of mask M1 and mask M2; Wherein: C is the imaging region of mask M1 figure; D is the imaging region of mask M2 figure;
Fig. 7 is the mask graph of mask M1 and mask M2 is that the actual of circle is exposed figure.
Embodiment
The present invention is introduced in detail below in conjunction with the drawings and the specific embodiments.But following embodiment is only limitted to explain the present invention, and protection scope of the present invention should comprise the full content of claim, and by following examples, namely those skilled in the art can realize the full content of the claims in the present invention.
Embodiment 1:
As shown in Figure 1, polymerization is caused laser instrument, beam expander L1 and mask M1 coaxially to place; Inhibition of polymerization laser instrument, beam expander L2 and mask M2 are coaxially placed simultaneously; Article two, light path carries out conjunction bundle by dichroic mirror DM (DichroicMirrors, also known as dichroic mirror); The figure of mask M1 and mask M2 carries out imaging by imaging len.
The mask graph getting mask M1 and mask M2 is L shape, and measure-alike, as shown in Figure 2.Control light path and mask position, make two masks imaging after lens L3 in same imaging plane, and have certain overlapping, as shown in Figure 3.In figure A be mask M1 under Inhibition of polymerization laser instrument condition of incidence through lens imaging, B is mask M2 under polymerization causes laser instrument condition of incidence through lens imaging.
By the photoresist spin coating containing polymerization initiator and polymerization inhibitor on a silicon substrate, and the imaging plane being placed in mask M1 and mask M2 place exposes, the intensity of laser and Inhibition of polymerization laser is caused by controlling polymerization, the photoresist of the imaging overlapping region of mask M1 and mask M2 is made not produce polymerization, thus only have non-overlapping exposure area, the photoresist in the B region namely in Fig. 3 produces polymerization.(photoresist of non-overlapping exposure area is thus only had to produce polymerization.) the actual exposure live width that therefore the obtains imaging line reductions that is mask M2 the live width of going itself and mask M1 imaging overlapping region to obtain, as shown in Figure 4.Adopt the method, by changing the image space of arbitrary mask, and increasing the imaging overlapping region of two masks, principle can realize the graph exposure of arbitrarily small live width, thus realize the litho pattern processing surmounting diffraction limit.
Embodiment 2:
As shown in Figure 1, polymerization is caused laser instrument, beam expander L1 and mask M1 coaxially to place; Inhibition of polymerization laser instrument, beam expander L2 and mask M2 are coaxially placed simultaneously; Article two, light path carries out conjunction bundle by dichroic mirror DM (DichroicMirrors, also known as dichroic mirror); The figure of mask M1 and mask M2 carries out imaging by imaging len.
Get the mask graph of mask M1 and mask M2 for circular, and measure-alike, as shown in Figure 5.Control light path and mask position, make two masks imaging after lens L3 in same imaging plane, and have certain overlapping, as shown in Figure 6.In figure C be mask M1 under Inhibition of polymerization laser instrument condition of incidence through lens imaging, D is mask M2 under polymerization causes laser instrument condition of incidence through lens imaging.
By the photoresist spin coating containing polymerization initiator and polymerization inhibitor on a silicon substrate, and the imaging plane being placed in mask M1 and mask M2 place exposes, the intensity of laser and Inhibition of polymerization laser is caused by controlling polymerization, the photoresist of the imaging overlapping region of mask M1 and mask M2 is made not produce polymerization, thus only have non-overlapping exposure area, the photoresist in the B region namely in Fig. 3 produces polymerization.(photoresist of non-overlapping exposure area is thus only had to produce polymerization.) the actual exposure region that therefore the obtains imaging figure that is mask M2 deducts the region that itself and mask M1 imaging overlapping region obtain, as shown in Figure 7.Adopt the method, by changing the image space of arbitrary mask, thus increasing or reducing the imaging overlapping region of two masks, the processing of " moon " type structure of different size can be realized.And by the imaging overlapping region of increase by two masks, principle can realize " moon " the type structure processing surmounting diffraction limit.
Claims (9)
1., based on the high-resolution imaging photoetching method that twin-beam polymerization causes and suppresses, its feature comprises the following steps:
Step (1), select or configure a kind of suitable photoresist, need in photoresist containing polymerization initiator and polymerization inhibitor, and the excitation laser wavelength that polymerization initiator and polymerization inhibitor work being different;
Step (2), select suitable polymerization to cause LASER Light Source, its corresponding wavelength can make the polymerization initiator in photoresist work, thus photoresist is polymerized;
Step (3), select suitable Inhibition of polymerization LASER Light Source, its corresponding wavelength can make the polymerization inhibitor in photoresist work, thus suppresses the polymerization of photoresist;
Step (4), respectively the emerging beam that polymerization causes laser instrument and Inhibition of polymerization laser instrument to be collimated with collimation lens L1 and collimation lens L2;
Step (5), making two metallic masks, mask 1 (M1) and mask 2 (M2), its mask graph shape and size are same or similar;
Step (6), polymerization cause laser optical path and Inhibition of polymerization laser optical path carries out conjunction bundle by dichroic mirror (DM), the figure scioptics of mask 1 and mask 2 are imaged in same imaging plane, and imaging spatially part is overlapping;
Step (7), will containing polymerization initiator, the photoresist sample (S) of polymerization inhibitor is placed on imaging plane and exposes, and after having exposed, develops to sample, obtains high-resolution imaging and photo-etching figure;
The high-resolution imaging photoetching method employing twin-beam that should cause based on twin-beam polymerization and suppress carries out once the mode of overlapping Imagewise exposure photoetching to having same or analogous mask graph, realize the graphics processing surmounting diffraction limit resolving power efficiently.
2. a kind of high-resolution imaging photoetching method causing based on twin-beam polymerization and suppress according to claim 1, is characterized in that: the photoresist in described step (1) comprises polymerization single polymerization monomer, is specially triethylene glycol dimethacrylate.
3. a kind of high-resolution imaging photoetching method causing based on twin-beam polymerization and suppress according to claim 1, it is characterized in that: the photoresist in described step (1) comprises polymerization initiator, be specially camphorquinone and ethyl-4 (dimethylamino) benzoic ether, corresponding wavelength photoreceptor is blue light.
4. a kind of high-resolution imaging photoetching method causing based on twin-beam polymerization and suppress according to claim 1, it is characterized in that: the photoresist in described step (1) comprises polymerization inhibitor, be specially tetraethylthiuram disulfide, wavelength photoreceptor is ultraviolet wavelength.
5. a kind of high-resolution imaging photoetching method causing based on twin-beam polymerization and suppress according to claim 1, is characterized in that: in described step (2), polymerization causes the diode pumping solid laser that LASER Light Source is outgoing blue light.
6. a kind of high-resolution imaging photoetching method causing based on twin-beam polymerization and suppress according to claim 1, is characterized in that: the Inhibition of polymerization LASER Light Source in described step (3) is the Argon ion laser of outgoing ultraviolet light.
7. a kind of high-resolution imaging photoetching method causing based on twin-beam polymerization and suppress according to claim 1, it is characterized in that: the figure of two metallic masks in described step (5) is the figure of needs processing, is specially periodic optical grating.
8. a kind of high-resolution imaging photoetching method causing based on twin-beam polymerization and suppress according to claim 1, it is characterized in that: two masks in described step (6) are overlapping by object lens imaging generating portion, and the size of overlapping region controls by mobile mask.
9. a kind of high-resolution imaging photoetching method causing based on twin-beam polymerization and suppress according to claim 1, is characterized in that: the exposure light source in described step (7) is that two LASER Light Source expose simultaneously.
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| CN108279550B (en) * | 2018-01-08 | 2021-07-27 | 武汉舒博光电技术有限公司 | Double-beam micro-nano optical manufacturing method |
| CN110967931A (en) * | 2018-09-30 | 2020-04-07 | 上海微电子装备（集团）股份有限公司 | Exposure apparatus and exposure method |
| CN110286560A (en) * | 2019-05-17 | 2019-09-27 | 华中科技大学 | A kind of mask plate manufacturing method applied to double light beam laser photoetching |
| CN110262193B (en) * | 2019-05-17 | 2021-03-30 | 华中科技大学 | Light beam alignment system and method applied to double-light beam lithography |
| CN110275393A (en) * | 2019-05-17 | 2019-09-24 | 华中科技大学 | A kind of photoresist applied to double light beam laser |
| CN110275345A (en) | 2019-06-05 | 2019-09-24 | 深圳市华星光电技术有限公司 | Display and preparation method thereof |
| CN110554577B (en) * | 2019-07-19 | 2021-10-22 | 暨南大学 | System and method for laser direct writing micro-nano structure based on single wavelength and double light beams |
| CN111880383A (en) * | 2020-09-11 | 2020-11-03 | 华中科技大学 | High-density photoetching pattern processing method |
| CN112034691A (en) * | 2020-10-10 | 2020-12-04 | 华中科技大学 | Device and method for shading complementary light intensity mask plate double-beam projection lithography |
| CN113156773B (en) * | 2021-03-31 | 2024-02-09 | 华中科技大学 | Cooperative absorption double-beam super-resolution lithography system and method |
| CN113960891B (en) * | 2021-10-26 | 2024-02-09 | 之江实验室 | Parallel interleaving super-resolution high-speed laser direct-writing lithography method and device |
| CN114153123B (en) * | 2021-12-10 | 2023-09-19 | 中国科学院光电技术研究所 | Photoresist composition and application thereof |
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