CN110267442B - Integrated SiC solid-state power controller - Google Patents
Integrated SiC solid-state power controller Download PDFInfo
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- CN110267442B CN110267442B CN201910405360.2A CN201910405360A CN110267442B CN 110267442 B CN110267442 B CN 110267442B CN 201910405360 A CN201910405360 A CN 201910405360A CN 110267442 B CN110267442 B CN 110267442B
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- 230000003071 parasitic effect Effects 0.000 abstract description 7
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H1/00—Details of emergency protective circuit arrangements
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1417—Mounting supporting structure in casing or on frame or rack having securing means for mounting boards, plates or wiring boards
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
- H05K9/002—Casings with localised screening
- H05K9/0022—Casings with localised screening of components mounted on printed circuit boards [PCB]
- H05K9/0024—Shield cases mounted on a PCB, e.g. cans or caps or conformal shields
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Abstract
The invention discloses an integrated SiC solid-state power controller, which adopts a three-layer superposed structure of a power circuit board, a driving circuit board and a digital circuit board, is electrically connected with a contact pin through a copper column, and is connected with the outside by bending and leading out a power terminal, thereby realizing the characteristics of high temperature resistance, high power density and low parasitic parameter of a module. The power wiring adopts a ceramic substrate of Si3N4The copper-clad ceramic substrate is technically realized, the main circuit, the current-limiting branch and the bleeder branch are integrated, a right-angle bending circuitous structure is adopted, the circuit volume of the power part is greatly reduced, the parasitic parameters of the power part are reduced, and the voltage stress of the SiC MOSFET is reduced. The SiC MOSFET adopts a bare chip and is welded in the circuit layout by utilizing a nano silver sintering technology, and adopts an ultrasonic aluminum wire bonding mode for interconnection to form a good heat conduction path, thereby greatly improving the heat dissipation effect, improving the high temperature resistance of the solid power controller and having high reliability.
Description
Technical Field
The invention belongs to the field of power electronics and electrician, and relates to a Solid State Power Controller (SSPC) module integration technology, which can greatly reduce the size of the SSPC, improve the reliability of the SSPC and expand the application field of the SSPC.
Background
A Solid State Power Controller (SSPC) is an electronic switching device formed by Solid semiconductor Power devices, mainly performs functions of load turn-on and turn-off control, inverse time limit overcurrent protection, overvoltage and undervoltage protection, short circuit protection and the like, has the advantages of no contact, no electric arc, no noise, quick response, small electromagnetic interference, long service life, high reliability, convenience for remote control of computers and the like, and is widely applied to the aspects of airplanes, tanks, ships, civil Power distribution networks and the like.
In order to meet the technology of high-voltage direct-current power supply systems which are widely researched and applied in the aviation industry at present, the development of a solid-state power controller with small volume, light weight, high power and high power density is urgent. At present, commercial solid-state power controllers are represented by DDC and Astronics in the united states, the highest voltage level is 270V, the single-channel maximum current is 75A, and the solid-state power controllers are large in size, so that the development of a solid-state power controller with high power and high power density is the important research point of the solid-state power controller applied to an aircraft in the future in order to adapt to a high-voltage direct-current power supply system with a higher power level of the aircraft.
In high power density integrated SSPC module design, thermal design and parasitic parameter optimization are crucial parts. Because the integrated SSPC module has small volume, the generated heat is not easy to be radiated, and the temperature inside the module is overhigh due to the accumulation inside the module, thereby damaging power devices and copper layer wiring inside the module; in addition, the overvoltage phenomenon caused by the parasitic parameters generated by the layout of the power wiring in the turn-off process of the power chip threatens the safe and normal operation of the power device chip, and in order to ensure that the power device chip does not fail due to overvoltage breakdown, the current SSPC module design engineer has to use a high-cost device product with a higher voltage level. Meanwhile, the overvoltage phenomenon also increases the loss of devices, influences the working efficiency and the electromagnetic performance of the circuit and puts higher requirements on the heat dissipation conditions of the module.
The current detection of the integrated SSPC module plays a decisive role in realizing the functions of short-circuit protection, band capacity starting and the like of a circuit, the detection resistor is taken as a circuit current detection means in the current commercial SSPC product, and the method is low in precision, safety and power consumption in high-current SSPC.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, provides a low parasitic parameter set integrated SiC solid-state power controller module with isolation and high-precision nondestructive current detection, can greatly improve the heat dissipation capability, reduce the voltage stress in the turn-off process of a power chip and is not lower than 150W/cm3High power density.
In order to achieve the above purpose, the solution of the invention is:
an integrated SiC solid power controller is composed of power circuit board, copper layer, current detecting circuit, driver circuit board, digital circuit board and connecting terminals. The power circuit board and the copper layer layout on the board provide a high-power circulation path, and a main circuit, a current limiting branch circuit, a leakage branch circuit and a current detection circuit are integrated; the driving circuit board provides driving signals for all power chips on the power circuit board and realizes short-circuit overcurrent protection, power input and power output are detected by using a power signal terminal, and detection and uploading of load current are realized by using a contact pin; the digital circuit board realizes the real-time monitoring of the state of the SSPC and the programmable inverse time limit and over-voltage and under-voltage protection and the communication function of the SSPC; three circuit boards are superposed up and down and are electrically connected with the contact pins through copper columns, the power circuit board and the driving circuit board are packaged inside the module through the shell, and the digital circuit board is electrically connected with the driving board through the contact pins and is supported on the shell.
In the above-mentioned integrated SiC solid-state power controller, the layout of the power circuit board and the copper layer on the board, including the layout of the main circuit, the current-limiting branch, the bleeding branch, and the current detection circuit, is implemented by using a copper-clad ceramic substrate (DBC). The main circuit introduces power electricity through a power electricity access terminal, power on-off operation of 540V/200A is carried out on a load by using 12 SiC MOSFET bare chips which are distributed in bilateral symmetry, the drive input and output of the SiC MOSFET bare chips are connected in a Kelvin mode, a drive circuit is completely decoupled from the power circuit, the drive circuit is provided with two bilateral symmetry distribution source electrode output signal terminals, one grid electrode input signal terminal is used for accessing a drive signal from a drive circuit board, the grid electrode resistance distribution adopts an upper-lower bilateral symmetry distribution structure by taking the drive signal terminal as an axis, the power input and output of the SiC MOSFET bare chips adopt same-side access and access distribution, and power output source electrodes are connected to a power wiring copper layer accessed to the load through aluminum bonding wires; the current-limiting branch is connected with a current-limiting resistor and power electricity through a power terminal and a power electricity connection terminal which are led out in a bending mode, two SiC MOSFET bare chips are connected in parallel to control the on-off of the current-limiting branch, a driving circuit and a power circuit are decoupled through Kelvin connection, the driving circuit is connected with a driving signal from a driving circuit board through a signal terminal, and the source electrode output of the power circuit is connected with the source electrode output of the power circuit of the main circuit SiC MOSFET bare chip in parallel to a power wiring copper layer connected with a load through an aluminum bonding wire; the current detection adopts an anisotropic magnetoresistive sensor, the current detection is realized by detecting the magnetic field intensity difference of a lower U-shaped conductor, the U-shaped conductor is a part of a power wiring copper layer accessed to a load and winds back to the direction close to a main circuit SiC MOSFET bare chip, a bleeder branch adopts a SiC MOSFET bare chip to control the on-off of the U-shaped conductor, the power drain input of the SiC MOSFET bare chip directly covers the power wiring copper layer accessed to the load, the power source output is accessed to a bleeder resistor through a terminal and a power ground terminal which winds back to the main circuit SiC MOSFET bare chip, a driving circuit still adopts Kelvin connection, and a signal terminal is utilized to introduce a driving signal from a driving circuit board; the negative electrodes of the two SiC Schottky diode bare chips connected with the bleeder branch in parallel directly cover the power wiring copper layer accessed to the load, and the positive electrodes are connected to the power grounding copper layer by utilizing aluminum bonding wires; the load accesses the power circuit using the power terminal and the power ground terminal directly overlying the power trace copper layer that accesses the load.
In the above-mentioned integrated SiC solid-state power controller, the copper-clad ceramic substrate (DBC) includes a three-layer structure including an upper copper layer and a lower copper layer, the middle silicon layer is made of Si3N4 material, the upper copper layer is a layout of an upper copper layer of the power circuit board, and the lower copper layer is welded to the AlSiC substrate.
In the above-mentioned integrated SiC solid-state power controller, the current detection circuit includes an anisotropic magnetoresistive sensor, a circuit around the sensor, a U-shaped conductor, and an interference magnetic field shield. The U-shaped conductor is a part of a power wiring copper layer connected to a load, is 0.3mm thick and directly covers the DBC silicon substrate; the circuit around the sensor is used for setting the working state of the sensor, the sensor is welded on a PCB with the thickness of 0.8mm, the PCB is adhered on the U-shaped conductor by using high-temperature-resistant silica gel, and a power supply is led in from the driving circuit board by using a contact pin and a current detection value is uploaded to the driving circuit board; the magnetic shield is made of permalloy materials and is of a half-full shield structure, the thickness of the magnetic shield is 0.3mm, the upper shield is directly arranged on the DBC ceramic layer, and the lower shield is embedded with the lower copper layer of the DBC through corrosion and is directly welded with the DBC ceramic layer.
In the integrated SiC solid-state power controller, the SiC MOSFET bare chip and the SiC schottky diode bare chip are welded by a nano silver sintering technique.
In the integrated SiC solid-state power controller, the aluminum bonding wires are all bonded by ultrasonic waves.
After the scheme is adopted, the invention has the following beneficial effects:
1) the integrated SiC SSPC module adopts a three-layer superposed structure of the power circuit board, the driving circuit board and the digital circuit board, the three-layer structure is electrically connected with the contact pins through the copper columns, and the module is connected with the outside by bending and leading out the power terminal, so that the volume of the module can be greatly reduced, and the characteristics of high temperature resistance, high power density and low parasitic parameters of the integrated SiC SSPC module are realized;
2) the power copper layer is realized by adopting a copper-clad ceramic substrate, and the silicon substrate of the middle layer adopts Si3N4Compared with a ceramic material of the traditional DBC technology, the material has the advantages that the thermal conductivity and the mechanical strength are at least two times higher, the thermal expansion coefficient is closer to that of a power chip, the lower surface of the material is processed into a fin structure, in addition, the power MOSFET and the diode are both bare chips made of SiC materials and are welded in a circuit layout by utilizing a nano silver sintering technology, the top and the bottom of the material are both power supply terminals and radiating surfaces of a device, a good heat conduction path can be formed, the radiating efficiency is greatly improved, and the high temperature resistance of the solid power controller is improved;
3) the power circuit adopts a right-angle bending roundabout structure, the power input drain electrode of the power chip is directly welded on the power copper layer, the connections between branches and between power chips adopt an aluminum bonding wire mode, the loss and the copper layer thickness are reduced to the maximum extent, the power SiC MOSFET circuit connection adopts Kelvin connection, the driving circuit and the power circuit are completely decoupled, the coupling of a small-power signal and a high-power signal is avoided, the working reliability of the SiC integrated SSPC module is improved, the circuit volume of the power part and the parasitic parameters of the power circuit can be greatly reduced through the whole power copper layer layout, and the voltage stress of a power chip turn-off device is reduced;
4) the anisotropic magnetoresistive sensor is adopted for current detection, so that the isolation of a high-power signal and a low-power signal uploaded by the current detection can be realized, the high-precision nondestructive detection requirement is realized, in addition, the normal work of the current detection and the high linearity of the detection result can be ensured by the arranged interference magnetic field shielding cover, the shielding cover structure is set to be a semi-full shielding cover structure, the defect that a silicon substrate cannot be perforated can be perfectly solved, the good interference magnetic field shielding effect is achieved, the thickness of the shielding cover is consistent with that of a lower copper layer of a DBC (direct copper conductive) cable, and the problem that the totally-enclosed shielding cover is difficult to install due to the fact that the shielding cover is directly embedded with the lower copper layer through corrosion is solved;
5) the chip welding of the invention adopts the nano silver sintering technology, the bonding cavity of the technology is small and only in micron order, and the bonding strength is high, so that the reliability and the heat conductivity of the chip can be greatly improved;
6) the chip interconnection and the branch connection of the invention adopt an ultrasonic aluminum wire bonding mode, thus reducing the damage to the chip to the maximum extent and having high reliability.
Drawings
FIG. 1 is a 3D appearance structure of the present invention;
FIG. 2 is a side view of a 3D structure of the present invention;
FIG. 3 is a power section circuit topology of the present invention;
FIG. 4 is a power circuit board layout of the present invention;
FIG. 5 is a block diagram of the current sensing circuit of the present invention;
FIG. 6 is a lower view of the current sensing shield of the present invention;
FIG. 7 is a structural view of a current sensing U-shaped gib of the present invention;
fig. 8 is a layout view of the driving circuit board of the present invention.
FIG. 1-housing; 2-a substrate; 3-power input power terminal; 4-current-limiting branch power chip power drain power terminal; 5-accessing a power terminal of a power wiring copper layer of the load; 6-bleeding branch power chip power source power terminal; 7-power ground power terminal; 8-power resistance of the bleeding branch; 9-power resistance of current limiting branch; 10-a digital circuit board; 11-power management circuitry on digital circuit boards; 12-DSC digital control chip circuit on digital circuit board; 13-CAN communication circuit on digital circuit board; 14-the driving circuit board uploads data to a signal terminal pin of the digital circuit board; 15-a power circuit board; 16-current limiting branch power chip SiC MOSFET drive signal terminal; 17-a current detection circuit; 18-a drive circuit board; 19-the current detection value is uploaded to a signal terminal contact pin of the driving circuit board; 20-a current limiting branch; 21-a main circuit; 22-a bleed branch; 23-DBC silicon base layer; 24-a main circuit power chip SiC MOSFET drain power input small signal terminal; 25-power out small signal terminal; 26-main circuit power chip SiC MOSFET source drive output signal terminal 1; 27-main circuit power chip SiC MOSFET source drive output signal terminal 2; 28-main circuit power chip SiC MOSFET drain drive input signal terminal; 29-bleeder branch power chip SiC MOSFET drive signal terminal; 30-power small signal terminal of power wiring copper layer connected to load; 31-main circuit power chip SiC MOSFET; 32-main circuit power chip SiC MOSFET bonding wire; 33-main circuit power chip SiC MOSFET gate resistance; 34-main circuit power chip SiC MOSFET drain power input copper layer; 35-a power output copper layer of a SiC MOSFET source electrode of the main circuit power chip; 36-the main circuit is connected with a power wiring copper layer of an access load through a bonding wire; 37-current limiting branch power chip SiC MOSFET; 38-power trace copper layer to access load; 39-bleeder branch power chip SiC MOSFET; 40-bleeder branch schottky diode; 41-bleeder branch schottky diode bond wire; 42-anisotropic magnetoresistive sensor surrounding circuit PCB board; a 43-U shaped flow conductor; 44-a lower shield portion; 45-shield upper portion; 46-anisotropic magnetoresistive sensor; 47-Power management circuitry on the drive Circuit Board; 48-a solid state power controller circuit state uploading circuit on the drive circuit board; 49-a bleeder branch power chip drive circuit on the drive circuit board; 50-overcurrent short-circuit protection circuit on the drive circuit board; 51-a current-limiting branch power chip driving circuit on the driving circuit board; and 52, driving a circuit of the main circuit power chip on the driving circuit board.
Detailed Description
The technical scheme of the invention is explained in detail in the following with the accompanying drawings.
As shown in fig. 1, which is a 3D external structure diagram of the present invention, it can be seen that the integrated SiC solid-state power controller is composed of a housing 1, a substrate 2, power terminals (3, 4, 5, 6, 7) and power resistors (a bleeder resistor 8, a current limiting resistor 9) led out of the housing, a circuit structure inside the housing, and a digital circuit board 10 mounted on the housing. The power resistors 8 and 9 are placed outside the housing 1, which is beneficial to the installation of the power resistor with large volume and high power in the integrated SSPC module and the heat dissipation of the power resistor. The shell 1 is made of an aluminum alloy material with high thermal conductivity, the substrate 2 is made of an AlSiC material with low thermal expansion coefficient and high thermal conductivity, the internal structure is sealed, and the internal structure is protected while heat inside the module is favorably dissipated; the gap is filled with the high-temperature-resistant silica gel material in the shell 1, so that the heat dissipation of devices in the module is considered, the stability of the internal structure is enhanced by using the characteristics of the silica gel material, and the internal structure is prevented from loosening; the digital circuit board 10 is installed on the shell through pins 14 distributed on two sides as shown in fig. 1, and the pins distributed on two sides not only play a role in electrically connecting the digital circuit board with the inside of the shell, but also play a role in fixing the digital circuit board; the power terminals 3, 4, 5, 6 and 7 are bent and then led out of the module, so that the module is conveniently connected with an external load and power electricity.
Fig. 2 shows a side view of the structure inside the housing, including the power circuit board 15 and the driver circuit board 18 and the terminals (14, 16, 19) for electrical connection between the boards. The signal terminal 14 is a pin electrically connecting the driving circuit board and the digital circuit board; the signal terminal 19 is a pin which is uploaded to the driving circuit board 18 by the current detection circuit 17; the signal terminal 16 is the signal driving terminal of the power chip SiC MOSFET in the current-limiting branch, the signal connection between the power circuit board and the driving circuit board is composed of the main circuit power chip SiC MOSFET source driving output signal terminals 26 and 27, the main circuit power chip SiC MOSFET gate driving input signal terminal 28, the main circuit power chip SiC MOSFET drain power input small signal terminal 24, the power wiring copper layer power output small signal terminal 30 accessing the load, the bleeding branch power chip SiC MOSFET driving signal terminal 29, the power ground small signal terminal 25, which are shown in FIG. 4, besides the terminal 16, these terminals are directly welded on the pad of the driving circuit board 18, the driving circuit board is shown in FIG. 8, which is opened with the hole corresponding to the power circuit board, the shape is also designed according to the internal structure of the module, and it is also equipped with the electronic devices related to the driving circuit, the circuit comprises a main circuit power chip driving circuit 52, a current-limiting branch power chip driving circuit 51, a bleeding branch power chip driving circuit 49, a power management circuit 47, an SSPC state quantity uploading circuit 48 and an SSPC short-circuit overcurrent protection circuit 50.
As shown in fig. 4, the power circuit board is composed of a copper layer layout on a board, a current detection circuit layout, and connection terminals between the power circuit board and an external environment and a driving board, and a circuit topology corresponding to the power circuit board is as shown in fig. 3, wherein current passes through a main circuit 21 to supply power to a load, a current limiting branch 20 provides overcurrent protection for the load, and a bleeding branch 22 provides freewheeling protection for turning off the load. The power circuit board is realized by adopting a copper-clad ceramic substrate (DBC), namely, the upper part and the lower part are of three-layer structures of a copper layer and a middle silicon substrate, the three-layer structures are welded together, and the middle silicon substrate 23 is made of Si3N4The material, the upper copper layer is the copper layer of the circuit topology shown in fig. 2, and the lower copper layer is also welded with the AlSiC substrate.
In fig. 3 and 4, the main circuit 21 introduces power electricity through the power electricity access terminal 3, performs power on/off operation of 540V/200A on the load by using 12 SiC MOSFET bare chips 31 distributed bilaterally symmetrically, and the input power signal terminal 24 is uploaded to the driving circuit board 18 for detection, the driving input and output of the SiC MOSFET bare chip 31 are connected in kelvin, the driving circuit and the power circuit are completely decoupled, the driving circuit is provided with two source signal terminals 26 and 27 which are symmetrically distributed from left to right, one gate signal terminal 28 is connected in the driving signal from the driving circuit board 18, the gate resistors 33 are distributed in a vertically and symmetrically distributed structure with the signal terminals 26, 27 and 28 as axes, the power input and output of the SiC MOSFET bare chip 31 are distributed in a same-side connection and disconnection manner, and the source power output copper layer 35 is connected to the access load rated power wiring copper layer 38 through an aluminum bonding wire 36.
The current-limiting branch circuit 20 is connected with a current-limiting resistor 9 and a power circuit through a power terminal 4 and a power circuit access terminal 3 which are led out in a bending mode, two SiC MOSFET bare chips 37 are connected in parallel to control the on-off of the current-limiting branch circuit, a driving circuit and the power circuit are decoupled through Kelvin connection, the driving circuit is connected with a driving signal from a driving circuit board 18 through a signal terminal 16, and the source electrode output of the power circuit is connected with a power output copper layer 35 of a main circuit SiC MOSFET bare chip source electrode in parallel to a power wiring copper layer 38 connected with a load through an aluminum bonding wire 36.
As shown in fig. 5, the current detection circuit 17 adopts an anisotropic magnetoresistive sensor 46 to detect the magnetic field intensity difference of a lower U-shaped conductor 43, the U-shaped conductor 43 is a part of a power wiring copper layer 38 connected to a load, the shape of the U-shaped conductor is as shown in fig. 7, the U-shaped conductor is wound to the direction close to the main circuit SiC MOSFET bare chip 31, the thickness of the U-shaped conductor is 0.3mm, the U-shaped conductor directly covers the DBC silicon substrate 23, a sensor peripheral circuit 42 is used for setting the working state of the sensor and is welded on a PCB with the thickness of 0.8mm, the PCB is adhered on the U-shaped conductor 43 by using high temperature resistant silica gel, and a power supply is led in from the driving circuit board by using a contact pin 19 and a current detection value is uploaded to the driving circuit board 18; the magnetic shield is made of permalloy materials, is of a half-full shield structure, is 0.3mm thick, is directly arranged on the DBC ceramic layer, and is directly welded with the DBC ceramic layer by being embedded with a lower copper layer of the DBC through corrosion and by being directly welded with the DBC ceramic layer through the lower shield plate 44 as shown in figure 6.
The bleeder circuit 22 is controlled to be switched on and off by adopting a SiC MOSFET bare chip 36, the power drain input of the SiC MOSFET bare chip is directly covered on the load power wiring copper layer 38, the power source output is connected into the power resistor 8 through a terminal 5 and a power ground terminal 7 which is circuitous to the SiC MOSFET bare chip of the main circuit, the driving circuit still adopts Kelvin connection, and a driving signal is introduced from the driving circuit board 18 by utilizing a signal terminal 29; the cathodes of two SiC schottky diode bare chips 40 with parallel bleeder circuits directly cover the power wiring copper layer 38 connected to the load, and the anodes are connected to the power ground copper layer by using aluminum bonding wires 41, which are simplified as a diode in fig. 3; the load accesses the power circuit by using the power terminal 5 and the power ground terminal 7 which are directly covered on the power wiring accessed to the load, and the signal terminals 30 and 25 are respectively arranged on the power terminal 5 and the power ground terminal 7 to upload load voltage information to the drive circuit board 18.
The digital circuit board 10 has a circuit layout as shown in fig. 1, and includes a power management circuit 11, a DSC digital chip 12, a CAN communication circuit 13, and a connection interface 14 with a driving circuit board. The digital circuit board receives the on/off command of the upper computerThe data of the operating state of the solid-state power controller is uploaded to an upper computer, and I of the solid-state power controller is finished2T protection and over-voltage and under-voltage protection. The power management circuit 11 provides power for the DSP and other circuits; the DSC digital chip 12 is used as a control center of the digital circuit board and stores the programmed program; the connection interface 14 with the driving circuit board uploads the load current and the input and output voltage of the solid-state power controller to the digital circuit board.
The circuit layout of the driving circuit board 18 is shown in fig. 8, and includes a driving circuit 52 of the main circuit power chip, a driving circuit 51 of the current limiting branch power chip, a driving circuit 49 of the bleeding branch power chip, a short-circuit overcurrent protection circuit 50, a solid-state power controller circuit state uploading circuit 48, and a power management circuit 47. The power management circuit 47 is connected with a power supply from the outside to supply power to all circuits on the driving circuit board; the driving circuits 52, 51 and 49 of the main circuit, the current limiting branch and the bleeding branch provide driving signals for the power chip on the power circuit board to control the on and off of the main circuit, the current limiting branch and the bleeding branch; the short-circuit overcurrent protection circuit collects the load current on the power circuit board through the contact pin 19, monitors the load current and realizes protection by controlling a driving signal when the load current is overlarge; the solid-state power controller circuit state uploading circuit 48 uploads the current of the solid-state power controller, the input and output voltage signals to the digital circuit board 10, and the protection of the solid-state power controller is realized by performing digital programming on the digital circuit board 10.
In summary, although the basic structure, principle and method of the present invention have been specifically described by the above embodiments, it will be apparent to those skilled in the art that modifications/substitutions and combinations can be made without inventive effort without departing from the spirit of the present invention.
Claims (10)
1. An integrated SiC solid-state power controller is characterized by comprising a shell (1), a substrate (2), a power circuit board (15), a driving circuit board (18) and a digital circuit board (10); the circuit board comprises a substrate (2), a power circuit board (15) and a driving circuit board (18), wherein the substrate (2), the power circuit board (15) and the driving circuit board (18) are packaged in a shell (1), the power circuit board (15) is positioned on the substrate (2), the power circuit board (15) provides a high-power circulation path, and integrates a main circuit (21), a current limiting branch (20), a discharge branch (22) and a copper layer layout of a current detection circuit and power terminals which are bent and led out of the shell (1); the driving circuit board (18) is located above the power circuit board (15) and is electrically connected with the power circuit board (15) through a copper column and a contact pin, the driving circuit board (18) integrates a protection circuit, a driving circuit and an SSPC (steady state processor) state quantity uploading circuit, provides driving signals for all power chips on the power circuit board (15) and realizes short-circuit overcurrent protection, detects power input and power output voltage on the power circuit board (15) through small power signal terminals (24, 25 and 30), and realizes detection uploading of load current through the contact pin (19); the digital circuit board (10) is positioned above the driving circuit board (18), is electrically connected with the driving circuit board (18) through a contact pin (14) and is fixed outside the shell (1) of the solid-state power controller, and realizes the real-time monitoring of the state of the solid-state power controller, programmable inverse time limit and over-voltage and under-voltage protection and the communication function of the solid-state power controller.
2. An integrated SiC solid state power controller in accordance with claim 1 wherein: the power circuit board (15) is realized by adopting a copper-clad ceramic substrate, the copper-clad ceramic substrate comprises an upper copper layer, a lower copper layer and a middle silicon-based layer, and the middle silicon-based layer (23) is made of Si3N4The upper copper layer is the layout of the upper copper layer of the power circuit board, and the lower copper layer is welded with the substrate (2).
3. An integrated SiC solid state power controller in accordance with claim 1 wherein: the main circuit (21) comprises: a power electricity access terminal (3) for introducing power electricity; 12 SiC MOSFET bare chips (31) which are distributed symmetrically left and right and are used for carrying out power on-off operation on a load; a drive circuit is arranged between the SiC MOSFET bare chips which are symmetrically distributed, and the drive circuit is connected with a drive signal from a drive circuit board (18) through two source signal terminals (26, 27) and a grid signal terminal (28).
4. An integrated SiC solid state power controller in accordance with claim 3 wherein: the grid resistors (33) of the 12 SiC MOSFET bare chips which are distributed in the bilateral symmetry mode are distributed in the up-down bilateral symmetry mode by taking the two source signal terminals (26 and 27) and the grid signal terminal (28) as axes, the driving input and output of the SiC MOSFET bare chip (31) are connected in a Kelvin mode, and a driving circuit and a power circuit are completely decoupled; the power input and output of the SiC MOSFET bare chip (31) are distributed by adopting the same side access and access, and a source power output copper layer (35) is connected to a power wiring copper layer (38) of an access load through an aluminum bonding wire (36).
5. An integrated SiC solid state power controller in accordance with claim 1 wherein: the current limiting branch circuit (20) comprises a current limiting resistor (9) and two SiC MOSFET bare chips (37), the current limiting resistor (9) is arranged outside the shell (1), the current limiting branch circuit (20) is connected into the current limiting resistor (9) and power electricity through a power terminal (4) and a power electricity access terminal (3) which are led out in a bending mode, the two SiC MOSFET bare chips (37) are connected in parallel to control the on-off of the current limiting branch circuit (20), a driving circuit and a power circuit are decoupled through Kelvin connection, the driving circuit is connected into a driving signal from a driving circuit board (18) through a signal terminal (16), and the source electrode output of the power circuit is connected in parallel with a power output copper layer (35) of a source electrode of the main circuit SiC MOSFET bare chip through an aluminum bonding wire to a power wiring copper layer (38) connected into a load.
6. An integrated SiC solid state power controller in accordance with claim 1 wherein: the current detection circuit (17) comprises an anisotropic magneto-resistive sensor (46), a sensor peripheral circuit (42), a U-shaped conductor (43) and interference magnetic field shielding cases (44, 45), wherein the sensor peripheral circuit (42) is welded on a PCB, is adhered on the U-shaped conductor (43) by using high-temperature-resistant silica gel, and is used for introducing a power supply from the drive circuit board (18) and uploading a current detection value to the drive circuit board (18) by using a contact pin (19); the U-shaped conductor (43) is a part of a power wiring copper layer connected to a load, winds around to the direction close to the SiC MOSFET bare chip (31) of the main circuit and directly covers the silicon substrate (23) of the copper-clad ceramic substrate; the magnetic shield is of a half-full shield structure, an upper shield plate (45) is directly arranged on a silicon substrate (23) of the copper-clad ceramic substrate, and a lower shield plate (44) is embedded with a lower copper layer of the copper-clad ceramic substrate through corrosion and is directly welded with the silicon substrate (23) of the copper-clad ceramic substrate.
7. An integrated SiC solid state power controller in accordance with claim 1 wherein: the bleeder circuit (22) is composed of a SiC MOSFET bare chip (39) and a bleeder resistor (8) which are mutually connected in series, the drain power input of the SiC MOSFET bare chip is directly covered on a power wiring copper layer (38) connected with a load, the source power output is connected with the bleeder resistor (8) through a terminal (6) and a power ground terminal (7) circuitously connected to the SiC MOSFET bare chip of the main circuit, the bleeder resistor (8) is arranged outside the shell (1), the driving circuit adopts Kelvin connection, and a driving signal is introduced from the driving circuit board (18) by using a signal terminal (29); the negative electrodes of two SiC Schottky diode bare chips (40) which are connected with the bleeder branch in parallel directly cover the power wiring copper layer (38) connected with the load, and the positive electrodes are connected to the power copper layer by utilizing an aluminum bonding wire (41); the load is connected to the power circuit by a power terminal (5) and a power ground terminal (7) directly overlying the power line connected to the load.
8. An integrated SiC solid state power controller according to claim 3, 5 or 7, characterized in that: the welding of the SiC MOSFET bare chip adopts a nano silver sintering technology.
9. An integrated SiC solid state power controller according to claim 4, 5 or 7, characterized in that: the aluminum bonding wire bonding adopts an ultrasonic bonding mode.
10. An integrated SiC solid state power controller in accordance with claim 7 wherein: and the SiC Schottky diode bare chips are welded by adopting a nano silver sintering technology.
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