CN110265971A - Control circuit and chip - Google Patents

Control circuit and chip Download PDF

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Publication number
CN110265971A
CN110265971A CN201910674870.XA CN201910674870A CN110265971A CN 110265971 A CN110265971 A CN 110265971A CN 201910674870 A CN201910674870 A CN 201910674870A CN 110265971 A CN110265971 A CN 110265971A
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CN
China
Prior art keywords
voltage
switch
chip
detection
couples
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Withdrawn
Application number
CN201910674870.XA
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Chinese (zh)
Inventor
俞秀峰
张波
蓝舟
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Hangzhou Biyi Microelectronics Co Ltd
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Hangzhou Biyi Microelectronics Co Ltd
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Priority to CN201910674870.XA priority Critical patent/CN110265971A/en
Publication of CN110265971A publication Critical patent/CN110265971A/en
Withdrawn legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H5/00Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
    • H02H5/04Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
    • H02H5/042Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using temperature dependent resistors
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H02H7/125Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for rectifiers

Abstract

Present invention discloses a kind of control circuit and chip, the control circuit includes chip, and the chip includes a multiplexing pins;The multiplexing pins are respectively coupled to temperature-sensitive element, the first divider resistance, the second divider resistance;In the first state, the chip couples the temperature-sensitive element by the multiplexing pins, therefore, it is determined that the state of temperature of circuit system, realizes the overheat protector detection of chip;In the second condition, the chip couples the first divider resistance, the second divider resistance by the multiplexing pins, realizes at least one of overvoltage protection detection, under-voltage protection detection and demagnetization detection of output voltage.Control circuit proposed by the present invention and chip can reduce chip pin position, chip avoided to lead to the incomplete problem of function because of foot position deficiency by integrating the foot position of different function.Design simple circuit of the invention is reliable;It is integrated with overheat protector, over-voltage/under-voltage protection and demagnetization detection function, complete function, degree flexible in application is larger.

Description

Control circuit and chip
Technical field
The invention belongs to electronic circuit technology field, it is related to a kind of chip and control circuit.
Background technique
Fig. 1 is the circuit diagram that an existing control chip carries out overheat protector OTP by pin;Referring to Fig. 1, chip U11 inculcates a fixed current to external NTC by third pin position, since NTC impedance varies with temperature and changes, and examines Surveying 3 foot current potentials can be determined that the state of temperature of system, to realize the function of overheat protector (OTP).
Fig. 2 is that an existing control chip is illustrated by the circuit that pin carries out overvoltage protection/under-voltage protection and demagnetization detection Figure;Referring to Fig. 2, the third pin of chip U12 samples auxiliary winding voltage by two electric resistance partial pressures, to realize output electricity Overvoltage protection/the under-voltage protection (OVP/UVP) and demagnetization of pressure detect.
Since the respective independence of both the above function can only realize it in the insufficient situation of chip pin number itself A kind of middle function.It is limited chip functions can only, one of defencive function can only be selected, greatly limit chip in this way and answer Flexibility.
In view of this, nowadays there is an urgent need to design a kind of chip structure, it is above-mentioned existing for existing chip structure to overcome Defect.
Summary of the invention
The present invention provides a kind of control circuit and chip, by pin multiplexing, realizes using limited pin more Function.
In order to solve the above technical problems, according to an aspect of the present invention, adopting the following technical scheme that
A kind of control circuit, the control circuit include chip, and the chip includes a multiplexing pins;The multiplexing pins Couple temperature-sensitive element second end, the first end of the temperature-sensitive element be respectively coupled to the first divider resistance second end and second point The first end of the first end of piezoresistance, first divider resistance couples auxiliary winding;
In the first state, the chip couples the temperature-sensitive element by the multiplexing pins, therefore, it is determined that circuit system The state of temperature of system realizes the overheat protector detection of chip;
In the second condition, the chip couples the first divider resistance, the second divider resistance by the multiplexing pins, real At least one of overvoltage protection detection, under-voltage protection detection and demagnetization detection of existing output voltage.
As one embodiment of the present invention, the chip includes excess temperature detection module, the excess temperature detection module packet Include current source, first switch S1, first comparator U1 and power supply V1;
The first end of the output end coupling first switch S1 of the current source, the second end of the first switch S1 distinguish coupling The normal phase input end of the multiplexing pins and first comparator U1 is connect, the anode of the power supply V1 couples the first comparator U1 Inverting input terminal, the output end of the first comparator U1 couples overheat protector module.
As one embodiment of the present invention, the control circuit further includes 3rd resistor R3 or/and first diode D1;The 3rd resistor R3 or/and first diode D1 are arranged in parallel with temperature-sensitive element.
As one embodiment of the present invention, the excess temperature detection module further includes timer, the first comparator The first end of the output end coupling timer of U1, the second end of the timer couple overheat protector module.
As one embodiment of the present invention, the chip further includes over-voltage/under-voltage detection module and demagnetization detection mould Block;
The over-voltage/under-voltage detection module includes first capacitor C1, second switch S2 and over-voltage/undervoltage detection circuit, institute The first end for stating second switch S2 couples the multiplexing pins, and the second end of the second switch S2 is respectively coupled to first electricity Hold the first end and over-voltage/undervoltage detection circuit of C1;
The demagnetization detection module includes lead-edge-blanking circuit LEB and demagnetization detection circuit, the lead-edge-blanking circuit LEB First end couple multiplexing pins, the second end of the lead-edge-blanking circuit LEB couples demagnetization detection circuit.
As one embodiment of the present invention, the over-voltage/undervoltage detection circuit is to by the electricity of the multiplexing pins Press Vdem compared with setting over-voltage OVP voltage, under-voltage UVP voltage, to realize over-voltage/under-voltage protection detection;
Voltage Vdem of the demagnetization detection circuit to obtain the multiplexing pins realizes demagnetization inspection in Vdem < 0 Brake.
As one embodiment of the present invention, the first switch S1, second switch S2 complementation setting are opened first When closing S1 disconnection, second switch S2 closure;In first switch S1 closure, second switch S2 is disconnected;
During second switch S2 conducting, first switch S1 shutdown, the chip realizes over-voltage/under-voltage protection detection;
During first switch S1 conducting, second switch S2 shutdown, the normal phase input end of first comparator U1 is due to electric current Source I0 generates a voltage increment dV in multiplexing pins, to realize that overheat protector detects.
As one embodiment of the present invention, the first switch S1 is connected primary at interval of several switch periods.
According to another aspect of the present invention, adopt the following technical scheme that a kind of chip, the chip include that a multiplexing is drawn Foot;
In the first state, the chip couples a temperature-sensitive element by the multiplexing pins, therefore, it is determined that circuit system State of temperature, realize chip overheat protector detection;
In the second condition, the chip couples the first divider resistance, the second divider resistance by the multiplexing pins, real At least one of overvoltage protection detection, under-voltage protection detection and demagnetization detection of existing output voltage;
The chip includes excess temperature detection module, and the excess temperature detection module includes current source, first switch S1, the first ratio Compared with device U1 and power supply V1;
The first end of the output end coupling first switch S1 of the current source, the second end of the first switch S1 distinguish coupling The normal phase input end of the multiplexing pins and first comparator U1 is connect, the anode of the power supply V1 couples the first comparator U1 Inverting input terminal, the output end of the first comparator U1 couples overheat protector module.
As one embodiment of the present invention, the chip further includes over-voltage/under-voltage detection module and demagnetization detection mould Block, the over-voltage/under-voltage detection module include first capacitor C1, second switch S2 and over-voltage/undervoltage detection circuit, and described second The first end of switch S2 couples the multiplexing pins, and the second end of the second switch S2 is respectively coupled to the first capacitor C1's First end and over-voltage/undervoltage detection circuit;
The demagnetization detection module includes lead-edge-blanking circuit LEB and demagnetization detection circuit, the lead-edge-blanking circuit LEB First end couple multiplexing pins, the second end of the lead-edge-blanking circuit LEB couples demagnetization detection circuit.
As one embodiment of the present invention, the over-voltage/undervoltage detection circuit is to by the electricity of the multiplexing pins Press Vdem compared with setting over-voltage OVP voltage, under-voltage UVP voltage, to realize over-voltage/under-voltage protection detection;
Voltage Vdem of the demagnetization detection circuit to obtain the multiplexing pins realizes demagnetization inspection in Vdem < 0 Brake.
As one embodiment of the present invention, the first switch S1, second switch S2 complementation setting are opened first When closing S1 disconnection, second switch S2 closure;In first switch S1 closure, second switch S2 is disconnected;
During second switch S2 conducting, first switch S1 shutdown, the chip realizes over-voltage OVP/UVP under-voltage protection inspection It surveys;
During first switch S1 conducting, second switch S2 shutdown, the normal phase input end of first comparator U1 is due to electric current Source I0 generates a voltage increment dV in multiplexing pins, to realize that overheat protector detects.
The beneficial effects of the present invention are control circuit proposed by the present invention and chip, by by the foot position of different function It is integrated, more functions are realized using limited pin;The present invention can reduce chip pin position, avoid chip due to the deficiency of foot position Lead to the incomplete problem of function.Design simple circuit of the invention is reliable, be integrated with overheat protector, over-voltage/under-voltage protection with And demagnetization detection function, complete function, degree flexible in application are larger.
Detailed description of the invention
Fig. 1 is the circuit diagram that an existing control chip carries out overheat protector OTP by pin.
Fig. 2 is that an existing control chip is illustrated by the circuit that pin carries out overvoltage protection/under-voltage protection and demagnetization detection Figure.
Fig. 3 is the circuit diagram of control circuit in one embodiment of the invention.
Fig. 4 is the circuit diagram of chip in one embodiment of the invention.
Fig. 5 is the working waveform figure in one embodiment of the invention under control circuit discontinuous mode.
Fig. 6 is the working waveform figure in one embodiment of the invention under control circuit continuous mode.
Fig. 7 is the waveform diagram of GATE signal, S1 signal and S2 signal in one embodiment of the invention.
Specific embodiment
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
For a further understanding of the present invention, the preferred embodiment of the invention is described below with reference to embodiment, still It should be appreciated that these descriptions are only further explanation the features and advantages of the present invention, rather than to the claims in the present invention Limitation.
Just for several typical embodiments, the present invention is not limited merely to the model of embodiment description for the description of the part It encloses.Some technical characteristics in same or similar prior art means and embodiment, which are replaced mutually, also to be described in the present invention In the range of protection.
" coupling " or connection in specification, also comprising being indirectly connected with, such as pass through some active devices both comprising being directly connected to The connection that part, passive device or electrically-conducting medi carry out;May also include well known to a person skilled in the art can be achieved it is identical or By the connection of other active devices or passive device on the basis of identity function purpose, such as by switching, following circuit electricity The connection of road or component.
Present invention discloses a kind of control circuit, Fig. 3 is the circuit diagram of control circuit in one embodiment of the invention;Please Refering to Fig. 3, in one embodiment of this invention, the control circuit includes chip U2, and the chip U2 includes a multiplexing pins DEM;The multiplexing pins DEM is respectively coupled to temperature-sensitive element, and (in one embodiment of this invention, temperature-sensitive element is thermistor NTC), the first divider resistance R1, the second divider resistance R2.Specifically, the second end of the multiplexing pins coupling temperature-sensitive element, institute The first end for stating temperature-sensitive element is respectively coupled to the second end of the first divider resistance and the first end of the second divider resistance, and described first The first end of divider resistance couples auxiliary winding.
In the first state, the chip U2 couples the temperature-sensitive element by the multiplexing pins DEM, therefore, it is determined that electric The state of temperature of road system, realize chip overheat protector detection (in one embodiment of this invention, multiplexing pins play Fig. 1 The effect of middle NTC pin);In the second condition, the chip couples the first divider resistance R1, second by the multiplexing pins Divider resistance R2 realizes at least one of overvoltage protection detection, under-voltage protection detection and demagnetization detection of output voltage (at this In one embodiment of invention, multiplexing pins play the role of PRT pin in Fig. 2).
A kind of control circuit that the present invention discloses, the detection process of the control circuit are to export OVP/UVP by detection, are adopted It is voltage detecting, control more precisely and is realized simpler.And the scheme of the prior art is using current detecting, electric current inspection The realization process of survey is complex, and precision is not so good as voltage detecting, as long as one comparator of voltage detecting and a benchmark are real It is existing, and current detecting finally still needs to be converted into voltage signal and is just able to achieve detection, therefore current detecting is more than voltage detecting Complexity, precision are more inaccurate.
Furthermore it is possible to which demagnetization detection can be achieved in the embodiment of the present invention, NTC changes at different temperatures, without It will affect the precision of demagnetization detection.
Fig. 4 is the circuit diagram of chip in one embodiment of the invention;Referring to Fig. 4, in one embodiment of this invention, In one embodiment of this invention, the chip 1 include excess temperature detection module, the excess temperature detection module include current source I0, First switch S1, first comparator U1 and power supply V1.The first end of the output end coupling first switch S1 of the current source I0, institute The second end for stating first switch S1 is respectively coupled to the normal phase input end of the multiplexing pins and first comparator U1, the power supply V1 Anode couple the inverting input terminal of the first comparator U1, the output end of the first comparator U1 couples overheat protector mould Block.In one embodiment of this invention, excess temperature detection module couples overheat protector module, has served as warm detection module and has detected circuit When system meets excess temperature condition, overheat protector module is sent a signal to, to trigger OTP protection.
In one embodiment of this invention, the control circuit further includes 3rd resistor R3 or/and first diode D1, institute It states 3rd resistor R3 or/and first diode D1 is arranged in parallel with temperature-sensitive element.The i.e. described control circuit may include third electricity It hinders R3 (not including first diode D1), also may include first diode D1 (not including 3rd resistor R3), it can also be simultaneously Including 3rd resistor R3 and first diode D1.When control circuit includes simultaneously 3rd resistor R3 and first diode D1, the Three resistance R3, first diode D1 and temperature-sensitive element are arranged in parallel.
In one embodiment of this invention, the temperature-sensitive element is thermistor NTC;Certainly, temperature-sensitive element can also be adopted Use other elements.In one embodiment of this invention, the first end of the 3rd resistor R3 or/and first diode D1 distinguishes coupling Connect the first end of thermistor NTC, the second end of the first divider resistance R1, the first end of the second divider resistance R2;The third The second end of resistance R3 or/and first diode D1 are respectively coupled to the second end of thermistor NTC, multiplexing pins DEM;Described The first end of one divider resistance R1 couples transformer secondary winding.
In one embodiment of this invention, it when the control circuit includes first diode D1, is led in first diode D1 When logical, Vdem=Va;In first diode D1 cut-off, 3rd resistor R3 is arranged in parallel with thermistor NTC.
In one embodiment of this invention, the excess temperature detection module further includes timer, the first comparator U1's Output end couples the first end of timer, and the second end of the timer couples overheat protector module.It is not added in control circuit In the scheme of timer, when the temperature detected meets excess temperature requirement, i.e. triggering OTP is protected;Timer is added in control circuit When, the temperature detected meets excess temperature requirement, and certain time, i.e. triggering OTP protection.
The chip further includes over-voltage/under-voltage detection module and demagnetization detection module.The over-voltage/under-voltage detection module packet Include first capacitor C1, second switch S2 and over-voltage/undervoltage detection circuit 11;Wherein, over-voltage detection module corresponds to over-voltage detection electricity Road, under-voltage detection module correspond to undervoltage detection circuit.The first end of the second switch S2 couples the multiplexing pins, and described the The second end of two switch S2 is respectively coupled to the first end and over-voltage/undervoltage detection circuit 11 of the first capacitor C1.The demagnetization Detection module includes lead-edge-blanking circuit LEB15 and demagnetization detection circuit 13, the first end coupling of the lead-edge-blanking circuit LEB15 Multiplexing pins are connect, the second end of the lead-edge-blanking circuit LEB15 couples demagnetization detection circuit 13.In primary current control loop In, since switch conduction moment has pulse peak current, if sampling current value at this time and being controlled, before meeting is because of pulse The spike on edge generates false triggering movement, and lead-edge-blanking circuit LEB15 can be used to eliminate this false triggering.
In one embodiment of this invention, the over-voltage/undervoltage detection circuit 11 is to by the electricity of the multiplexing pins DEM Press Vdem compared with setting over-voltage OVP voltage, under-voltage UVP voltage, to realize over-voltage/under-voltage protection detection;The demagnetization inspection Voltage Vdem of the slowdown monitoring circuit 13 to obtain the multiplexing pins realizes demagnetization detection function in Vdem < 0.
Specifically, in one embodiment of this invention, when system carries out over-voltage/under-voltage protection detection and demagnetization, as long as Determine Vdem voltage condition.Vdem=Va=Vaux*R2/ (R1+R2), the t1-t2 in secondary side degaussing phase, i.e. Fig. 5 (t1-t3 in Fig. 6) detects Vdem voltage can be achieved over-voltage/under-voltage protection function compared with the OVP voltage of setting, UVP voltage;It is logical It whether true crosses judgement Vdem < 0, when establishment, realizes demagnetization detection function.
Fig. 5 is the working waveform figure in one embodiment of the invention under control circuit discontinuous mode, and Fig. 6 is that the present invention one is implemented Working waveform figure in example under control circuit continuous mode;Please refer to Fig. 5, Fig. 6, in one embodiment of this invention, main switch The DS voltage waveform of Q1, the voltage waveform of chip multiplexing pins DEM, transformer T1 primary side electric current, becomes auxiliary winding voltage waveform Working waveform figure of the depressor T1 secondary current at discontinuous mode DCM can be found in shown in Fig. 5, the DS voltage waveform of main switch Q1, Auxiliary winding voltage waveform, the voltage waveform of chip multiplexing pins DEM, transformer T1 primary side electric current, transformer T1 secondary current Working waveform figure at continuous mode CCM can be found in shown in Fig. 6.Wherein Vds is the DS voltage waveform of main switch Q1 in Fig. 3, Vaux is auxiliary winding voltage waveform, and Vdem is the voltage waveform of chip multiplexing pins DEM, and Ip is transformer T1 primary side electric current, The current waveform of Q1 is flowed through, Is is transformer T1 secondary current, that is, flows through the current waveform of secondary side diode D1.
In one embodiment of this invention, the first switch S1, second switch S2 complementation setting, i.e., in first switch S1 When disconnection, second switch S2 closure;In first switch S1 closure, second switch S2 is disconnected.In second switch S2 conducting, first During switch S1 is turned off, the chip realizes over-voltage OVP/UVP under-voltage protection detection.In first switch S1 conducting, second switch During S2 is turned off, the normal phase input end of first comparator U1 generates a voltage increment due to current source I0 in multiplexing pins DV, to realize that overheat protector detects.In one embodiment of this invention, control circuit includes timer, when voltage increment dV is big When setting the first reference voltage V1, first comparator U1 exports high level, reset timer;When voltage increment dV is less than setting When the first reference voltage V1, first comparator U1 exports low level not reset timer, therefore when voltage increment dV is continuously less than setting Fixed first reference voltage V1 is more than triggering overheat protector OTP logic after setting time.
Fig. 7 is the waveform diagram of GATE signal, S1 signal and S2 signal in one embodiment of the invention;Referring to Fig. 7, in this hair In a bright embodiment, excess temperature, which detects, realizes the driving signal as shown in fig. 7, GATE is primary side switch pipe Q1 (in Fig. 3), first Switch S1 and second switch S2 are complementary, and first switch S1 2us after primary side shutdown is opened, and continue 1us.When second switch S2 is connected Period, chip realizes over-voltage OVP/UVP under-voltage protection detection, when first switch S1 is connected, and second switch S2 is turned off, the first ratio Compared with device U1 anode since current source I0 generates a voltage increment dV on DEM foot, when dV is greater than V1, U1 exports high level, Reset OTP timer;As dV < V1, U1 exports low level not reset timer, therefore working as dV continuously less than V1 is more than certain time Afterwards, OTP logic is triggered.
In one embodiment of this invention, the first switch S1 is connected primary at interval of several switch periods.System OTP detection is carried out without each cycle, therefore first switch S1 can be connected every N number of switch periods, and N takes suitable value. Triggering OTP condition is (R1//R2+RNTC//R3) * I0 < V1, wherein the first divider resistance R1, the second divider resistance R2, third Electric current I0, the first reference voltage V1 that resistance R3, current source export are preset parameter, and when temperature rises, RNTC drops to centainly It can trigger overheat protector OTP protection when degree.
In one embodiment of this invention, OTP detection function is realized by internal fixed current source sink current, selection is suitable Resistance value, OTP function can not be enabled.
In one embodiment of this invention, if the OVP voltage of Vdem is 2.5V, correspondence system then takes in Vaux=25V R1=90k, R2=10k, then have a R1//R2=9k, and the room temperature impedance of NTC is 100k, RNTC=3.7k at 120 degree of temperature of protection, Inner setting I0=100uA, V1=1.1V, then take R3=4.3k.
The present invention also discloses a kind of switching power circuit, and the switching power circuit includes above-mentioned control circuit.
The present invention further discloses a kind of chip, and the chip includes a multiplexing pins;In the first state, the chip A temperature-sensitive element is coupled by the multiplexing pins, therefore, it is determined that the state of temperature of circuit system, realizes the overheat protector of chip Detection;In the second condition, the chip couples the first divider resistance, the second divider resistance by the multiplexing pins, realizes At least one of overvoltage protection detection, under-voltage protection detection and demagnetization detection of output voltage.The chip included temperature detector Module is surveyed, the excess temperature detection module includes current source, first switch S1, first comparator U1 and power supply V1;The current source Output end coupling first switch S1 first end, the second end of the first switch S1 is respectively coupled to the multiplexing pins and the The normal phase input end of one comparator U1, the anode of the power supply V1 couples the inverting input terminal of the first comparator U1, described The output end of first comparator U1 couples overheat protector module.The specific structure of the chip, which is seen in the above control circuit, to be had Close the introduction of chip pin setting and circuit composition.
In conclusion control circuit proposed by the present invention and chip can reduce core by integrating the foot position of different function Piece foot position avoids chip from leading to the incomplete problem of function because of foot position deficiency.Design simple circuit of the invention is reliable, integrates Overheat protector, over-voltage/under-voltage protection and demagnetization detection function, complete function, degree flexible in application are larger.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited In contradiction, all should be considered as described in this specification.
Description and application of the invention herein are illustrative, is not wishing to limit the scope of the invention to above-described embodiment In.The deformation and change of embodiments disclosed herein are possible, the realities for those skilled in the art The replacement and equivalent various parts for applying example are well known.It should be appreciated by the person skilled in the art that not departing from the present invention Spirit or essential characteristics in the case where, the present invention can in other forms, structure, arrangement, ratio, and with other components, Material and component are realized.Without departing from the scope and spirit of the present invention, can to embodiments disclosed herein into The other deformations of row and change.

Claims (12)

1. a kind of control circuit, which is characterized in that the control circuit includes chip, and the chip includes a multiplexing pins;Institute The second end of multiplexing pins coupling temperature-sensitive element is stated, the first end of the temperature-sensitive element is respectively coupled to the second of the first divider resistance The first end of the first end at end and the second divider resistance, first divider resistance couples auxiliary winding;
In the first state, the chip couples the temperature-sensitive element by the multiplexing pins, therefore, it is determined that circuit system State of temperature realizes the overheat protector detection of chip;
In the second condition, the chip couples the first divider resistance, the second divider resistance by the multiplexing pins, realizes defeated At least one of the overvoltage protection detection, under-voltage protection detection and demagnetization detection of voltage out.
2. control circuit according to claim 1, it is characterised in that:
The chip includes excess temperature detection module, and the excess temperature detection module includes current source, first switch S1, first comparator U1 and power supply V1;
The first end of the output end coupling first switch S1 of the current source, the second end of the first switch S1 are respectively coupled to institute The normal phase input end of multiplexing pins and first comparator U1 is stated, the anode of the power supply V1 couples the anti-of the first comparator U1 The output end of phase input terminal, the first comparator U1 couples overheat protector module.
3. control circuit according to claim 1, it is characterised in that:
The control circuit further includes 3rd resistor R3 or/and first diode D1;The 3rd resistor R3 or/and the one or two pole Pipe D1 is arranged in parallel with temperature-sensitive element.
4. control circuit according to claim 2, it is characterised in that:
The excess temperature detection module further includes timer, the first end of the output end coupling timer of the first comparator U1, The second end of the timer couples overheat protector module.
5. control circuit according to claim 2, it is characterised in that:
The chip further includes over-voltage/under-voltage detection module and demagnetization detection module;
The over-voltage/under-voltage detection module includes first capacitor C1, second switch S2 and over-voltage/undervoltage detection circuit, and described The first end of two switch S2 couples the multiplexing pins, and the second end of the second switch S2 is respectively coupled to the first capacitor C1 First end and over-voltage/undervoltage detection circuit;
The demagnetization detection module includes lead-edge-blanking circuit LEB and demagnetization detection circuit, and the of the lead-edge-blanking circuit LEB One end couples multiplexing pins, and the second end of the lead-edge-blanking circuit LEB couples demagnetization detection circuit.
6. control circuit according to claim 5, it is characterised in that:
Over-voltage/the undervoltage detection circuit is to by the voltage Vdem of the multiplexing pins and setting over-voltage OVP voltage, under-voltage UVP voltage compares, to realize over-voltage/under-voltage protection detection;
Voltage Vdem of the demagnetization detection circuit to obtain the multiplexing pins realizes that demagnetization detects function in Vdem < 0 Energy.
7. control circuit according to claim 5, it is characterised in that:
The first switch S1, second switch S2 complementation setting, i.e., when first switch S1 is disconnected, second switch S2 closure;? When first switch S1 is closed, second switch S2 is disconnected;
During second switch S2 conducting, first switch S1 shutdown, the chip realizes over-voltage/under-voltage protection detection;
During first switch S1 conducting, second switch S2 shutdown, the normal phase input end of first comparator U1 is due to current source I0 A voltage increment dV is generated, in multiplexing pins to realize that overheat protector detects.
8. control circuit according to claim 7, it is characterised in that:
The first switch S1 is connected primary at interval of several switch periods.
9. a kind of chip, which is characterized in that the chip includes a multiplexing pins;
In the first state, the chip couples a temperature-sensitive element by the multiplexing pins, therefore, it is determined that the temperature of circuit system Degree state realizes the overheat protector detection of chip;
In the second condition, the chip couples the first divider resistance, the second divider resistance by the multiplexing pins, realizes defeated At least one of the overvoltage protection detection, under-voltage protection detection and demagnetization detection of voltage out;
The chip includes excess temperature detection module, and the excess temperature detection module includes current source, first switch S1, first comparator U1 and power supply V1;
The first end of the output end coupling first switch S1 of the current source, the second end of the first switch S1 are respectively coupled to institute The normal phase input end of multiplexing pins and first comparator U1 is stated, the anode of the power supply V1 couples the anti-of the first comparator U1 The output end of phase input terminal, the first comparator U1 couples overheat protector module.
10. according to claim chip according to claim 9, it is characterised in that:
The chip further includes over-voltage/under-voltage detection module and demagnetization detection module, and the over-voltage/under-voltage detection module includes the The first end coupling multiplexing of one capacitor C1, second switch S2 and over-voltage/undervoltage detection circuit, the second switch S2 is drawn Foot, the second end of the second switch S2 are respectively coupled to the first end and over-voltage/undervoltage detection circuit of the first capacitor C1;
The demagnetization detection module includes lead-edge-blanking circuit LEB and demagnetization detection circuit, and the of the lead-edge-blanking circuit LEB One end couples multiplexing pins, and the second end of the lead-edge-blanking circuit LEB couples demagnetization detection circuit.
11. chip according to claim 10, it is characterised in that:
Over-voltage/the undervoltage detection circuit is to by the voltage Vdem of the multiplexing pins and setting over-voltage OVP voltage, under-voltage UVP voltage compares, to realize over-voltage/under-voltage protection detection;
Voltage Vdem of the demagnetization detection circuit to obtain the multiplexing pins realizes that demagnetization detects function in Vdem < 0 Energy.
12. chip according to claim 11, it is characterised in that:
The first switch S1, second switch S2 complementation setting, i.e., when first switch S1 is disconnected, second switch S2 closure;? When first switch S1 is closed, second switch S2 is disconnected;
During second switch S2 conducting, first switch S1 shutdown, the chip realizes over-voltage OVP/UVP under-voltage protection detection;
During first switch S1 conducting, second switch S2 shutdown, the normal phase input end of first comparator U1 is due to current source I0 A voltage increment dV is generated, in multiplexing pins to realize that overheat protector detects.
CN201910674870.XA 2019-07-25 2019-07-25 Control circuit and chip Withdrawn CN110265971A (en)

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