CN110265479A - Logical device, logic module and its manufacturing method - Google Patents
Logical device, logic module and its manufacturing method Download PDFInfo
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- CN110265479A CN110265479A CN201910447226.9A CN201910447226A CN110265479A CN 110265479 A CN110265479 A CN 110265479A CN 201910447226 A CN201910447226 A CN 201910447226A CN 110265479 A CN110265479 A CN 110265479A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66984—Devices using spin polarized carriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract
The present invention provides a kind of logical device and preparation method thereof, which includes: substrate, heavy metal layer, ferromagnetic layer, more iron layer and oxide skin(coating)；Wherein, heavy metal layer includes the cross structure that outboard end is provided with corresponding electrode, and the direction of electric field between oxide skin(coating) and heavy metal layer is applied to by changing, changes the resistance of heavy metal layer.Specifically, substrate is flexible substrate, has many advantages, such as anti-extrusion, flexible, which realizes regulation of the electric field to Quantum geometrical phase critical current by multi-iron material at room temperature, so that Effective Regulation Quantum geometrical phase signal carries out.Change the effect of logical device using different oxidation state interfaces (oxide skin(coating)), input voltage is set to generate difference to the regulation degree of Quantum geometrical phase critical current, to can reach N-shaped or p-type logical operation function, obtain light, portable, low-power consumption logical device, logical device can also be combined, obtain the logic module for integrating N-shaped, p-type logic function.
Description
Technical field
The present invention relates to microelectronics technology, it is electrically coupled and Quantum geometrical phase more particularly to one kind based on how ferromagnetic
The logical device and its manufacturing method of effect.
Background technique
For conventional electronics based on the charge attribute of electronics, people realize that information is deposited by the control to electron charge
Storage and logical process.However, the influence of quantum effect, energy loss for being faced etc. is got over as electronic device is gradually miniaturized
It is more obvious, conventional electronics can no longer meet the demand of development.
Spin electric device has many advantages, such as that non-volatile, low energy consumption and high integration develop rapidly it, spin
The characteristics such as high computing capability, low energy consumption of the electronic device in information processing are that traditional semi-conductor electronic device is incomparable
's.The torque that Quantum geometrical phase can be generated using it realizes to the manipulation of magnetic moment the spin-flip control, it can be achieved that under small size
System is without generating spin polarized current by specific magnetic material.Based on spin(-)orbit torque (Quantum geometrical phase)
Spin logical device in terms of logic configuration have particular advantage, its reconfigurable logical operation.It is easy to combine voltage
Magnetic anisotropy (VCMA) effect of control regulates and controls Quantum geometrical phase.The regulation of conventional spin orbit coupling relies on electric current and generates
Magnetic field, spinning moment etc., this needs higher current density, to generate a large amount of energy consumption.And multi-ferroic material can make
With electric field regulate and control Quantum geometrical phase, can be effectively reduced energy consumption, information storage, in terms of have it is huge
Potential application foreground.
In view of this, designing the production side of a kind of light, portable, low-power consumption, stability good logical device and the device
Method is the technical problems to be solved by the invention.
Summary of the invention
In view of this, the present invention provide it is a kind of be electrically coupled and the logical device of Quantum geometrical phase effect based on how ferromagnetic,
To solve the problems such as logical device flexibility in the prior art is insufficient and energy consumption is high.
On the one hand, the present invention provides a kind of logical device characterized by comprising
Substrate, for carrying the logical device, the substrate is flexible substrate；
Heavy metal layer is located on the substrate, with a thickness of 3-10 nanometers；
Ferromagnetic layer is located on the heavy metal layer, with a thickness of 1-30 nanometers；
More iron layer are located on the ferromagnetic layer, with a thickness of 2-200 nanometers；
Oxide skin(coating) is located in more iron layer, with a thickness of 1-10 nanometers；
Wherein, the heavy metal layer includes at least one cross structure, and is provided in the outboard end of the cross structure
Corresponding electrode is applied to the direction of voltage between the oxide skin(coating) and the heavy metal layer by changing, and changes described heavy
The resistance of metal layer.
Preferably, the oxide skin(coating) is one of peroxidating state or deficient oxidation state.
Preferably, the outboard end of the cross structure includes an input electrode, another termination electrode opposite with input terminal
The electrode of ground connection, the another both ends on the cross structure and the perpendicular direction of input electrode is output end, by from the output
Unusual Hall voltage is detected as output signal in end.
Preferably, the oxide skin(coating) is peroxidating state, is positive electricity between the oxide skin(coating) and the heavy metal layer
When pressure, the Quantum geometrical phase critical current of the layer is I11, it is between the oxide skin(coating) and the heavy metal layer
When negative voltage, the Quantum geometrical phase critical current of the layer is I21, wherein I11Greater than I21。
Preferably, it is passed through input current I to input electrode, works as I21< I < I11When, under forward voltage, the output letter
Number do not change with the change in the direction input current I, under negative voltage, the output signal changes with the direction input current I
Become and it is reversed.
Preferably, the peroxide layer is to owe oxidation state, is positive between the oxide skin(coating) and the heavy metal layer
When voltage, the Quantum geometrical phase critical current of the layer is I12, between the oxide skin(coating) and the heavy metal layer
When for negative voltage, the Quantum geometrical phase critical current of the layer is I22, wherein I12Less than I22。
Preferably, it is passed through input current I to input electrode, works as I12< I < I22When, under forward voltage, the output letter
It is number reversed with the change in the direction input current I, under negative voltage, the output signal not changing with the direction input current I
Become and changes.
According to another aspect of the present invention, a kind of logic module is also provided characterized by comprising at least two is above-mentioned
Logical device；Wherein, it is peroxidating state and oxide layer is to owe two kinds of oxidation state that the logical device, which includes oxide skin(coating), two
Kind described logical device is connected in series, and the heavy metal layer and oxide skin(coating) of two kinds of logical devices are connected in series respectively, passes through
Change logic described in the control wherein at least one of the voltage direction selectivity between the oxide skin(coating) and the heavy metal layer
Device.
According to another aspect of the present invention, a kind of production method of logical device is also provided, which is characterized in that the production
Method includes:
Substrate is cleaned；
Heavy metal layer is prepared on substrate after the cleaning；
Photoetching and etching are carried out to the heavy metal layer, form it into cross structure；
In the outboard end of the cross structure, corresponding electrode is set；
Ferromagnetic layer is prepared on the heavy metal layer；
More iron layer are prepared on the ferromagnetic layer；
Oxide skin(coating) is prepared in more iron layer；
Wherein, when preparing oxide skin(coating) in more iron layer, oxide skin(coating) can be made by the state of oxidation of control oxide layer
In peroxidating state or deficient oxidation state, to be respectively formed p-type logical device or N-shaped logical device.
Preferably, the substrate is by polyether sulfone PES, polyethylene terephthalate PI, mylar's rouge
At least one of the own diester PPA of PET, polydimethylsiloxanes PDMS, polypropylene, mica Mica material is made；
The heavy metal layer is made of Pt, W, at least one of Ta material；
The electrode is made of Pt, W, at least one of Ta material；
The material of the ferromagnetic layer is, for example, CoFeB, CoFe, NiFe, FeCrCo, at least one of FeCoV；
More iron layer include BiFeO3、GaFeO3、BiCrO3、TbMnO3、Bi2FeCrO6、BiMnO3、HoMn2O5、
HoMn2O5、YbMn2O5、ScMn2O5、YMn2O5、GaMn2O5、DyMn2O5、ErMn2O5、HoMnO3、YbMnO3、ScMnO3、YMnO3、
GaMnO3、DyMnO3、ErMnO3At least one of；
The material of the oxide skin(coating) is at least one of the oxide of Al, the oxide of Si, the oxide of Mg.
Logical device provided by the invention, have the following advantages that or the utility model has the advantages that by using flexible material make substrate,
Have many advantages, such as corresponding logical device compared with traditional devices lighter, anti-extrusion, flexible；The logical device can basis
Need to adjust the state of oxidation of its oxide skin(coating), so that N-shaped or p-type logical device needed for being formed, are patrolled to execute N-shaped or p-type
Function is collected, to obtain light, portable, low-power consumption logical device, correspondingly, production method corresponding to the logical device
With very strong practicability.
It further, can be straight the present invention also provides a kind of logic module being composed of above two logical device
It connects and executes N-shaped, p-type logic function, integrate N-shaped, p-type logic function, and there are two types of initialize while device information for tool
With erasing function, and easy to operate, the logical complement of logic module also further enhances its reliability.
Based on logic module provided by the invention, not only there is complementary logic calculation function, there are also information initializing or wipings
Except function, have broad application prospects in multi-functional or programmable spin logical device field.
Detailed description of the invention
By referring to the drawings to the description of the embodiment of the present invention, the above and other purposes of the present invention, feature and
Advantage will be apparent from, in the accompanying drawings:
Fig. 1 is the structural schematic diagram of the logical device of the embodiment of the present invention；
Fig. 2 is the heavy metal layer top view of the logical device of the embodiment of the present invention；
Fig. 3 is the instrumentation plan of the logical device of the embodiment of the present invention；
Fig. 4 a is the experimental features figure of logical device first embodiment of the present invention；
Fig. 4 b is the truth table of logical device first embodiment of the present invention；
Fig. 5 a is the experimental features figure of logical device second embodiment of the present invention；
Fig. 5 b is the truth table of logical device second embodiment of the present invention；
Fig. 6 is the production flow diagram of the logical device of the embodiment of the present invention；
Fig. 7 a is the schematic diagram of logic module first embodiment of the present invention；
Fig. 7 b is the schematic diagram of logic module second embodiment of the present invention；
Fig. 8 is the truth table of the logic module of the embodiment of the present invention.
Specific embodiment
Following discloses provide many different embodiments or example to implement the different characteristic of the application.It is described below
Component or the specific embodiment of arrangement are to simplify the present invention.Certainly, these are only that example is not intended to limit the present invention.
In addition, in the specification and in the claims, term " first ", " second " etc. between analogous element for carrying out
It distinguishes, and if the sequence of time sequencing, spatial order, hierarchal order or any other mode may not be described, should be appreciated that
These terms used are interchangeable under appropriate environment, and the embodiment of the present invention described herein can be to be described herein
Or other other than showing sequentially operate.
It should be noted that the term " includes " used in detail in the claims should not be construed as limited to hand listed below
Section, other elements or step is not precluded in it.It should be interpreted the specified feature, number, the step being such as related to as a result,
Or the presence of component, but it is not excluded that the presence of other one or more features, number, step or component or a combination thereof
Or addition.Therefore, the range of word " equipment including device A and B " should not be limited to the device being only made of component A and B.
This means that the associated component of equipment is A and B for the present invention.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In the description that this is provided, multiple details are elaborated.It should be appreciated, however, that the embodiment of the present invention does not have
It is practiced in the case where these details.In other embodiments, in order not to interfere understanding of this description, do not show in detail
Known method, structure and technology out.
The present invention can be presented in a variety of manners, some of them example explained below.
Fig. 1 is the structural schematic diagram of the logical device of the embodiment of the present invention, as shown in Figure 1, logical device 100 includes: lining
Bottom 110, heavy metal layer 120, ferromagnetic layer 130, more iron layer 140 and oxide skin(coating) 150, wherein heavy metal layer 120 includes cross
Structure, and the outboard end of cross structure is provided with corresponding electrode.
Overall structure is according to substrate 110, heavy metal layer 120, ferromagnetic layer 130, more iron layer 140 and oxide skin(coating) 150
Sequence stacks gradually from bottom to up, and heavy metal layer 120, ferromagnetic layer 130, more iron layer 140 and oxide skin(coating) 150 are in thin
It is membranaceous.
Polyether sulfone (PES), polyethylene terephthalate (PI), mylar's rouge can be selected in substrate 110
(PET), polydimethylsiloxanes (polydimethylsiloxane, PDMS), the own diester of polypropylene
The preparation of the materials such as (polypropyleneadipate, PPA), mica (Mica), realizes flexible substrate.
Heavy metal layer 120 can be made of materials such as Pt, W, Ta, by photoetching and etching, form cross structure, and in cross
Corresponding electrode is arranged in the outboard end of structure, with for being electrically connected and measuring, the thickness of heavy metal layer is about 3nm-10nm.
Ferromagnetic layer 130 can be made of CoFeB, CoFe, NiFe, the materials such as FeCrCo, FeCoV, and thickness is about 1nm-
30nm。
More iron layer 140 are for example by BiFeO3、GaFeO3、BiCrO3、TbMnO3、Bi2FeCrO6、BiMnO3、HoMn2O5、
HoMn2O5、YbMn2O5、ScMn2O5、YMn2O5、GaMn2O5、DyMn2O5、ErMn2O5、HoMnO3、YbMnO3、ScMnO3、YMnO3、
GaMnO3、DyMnO3、ErMnO3At least one of equal materials material is made, and thickness is about 2nm-200nm.
Oxide skin(coating) 150 can be by AlOX、SiOX、MgOX(oxide of Al, the oxide of Si, Mg oxide) etc. materials
It is made, wherein the value of X can be determined according to the state of oxidation (peroxidating state or deficient oxidation state) of corresponding oxide skin(coating), oxide skin(coating)
150 thickness is about 1nm-10nm.
Fig. 2 is the heavy metal layer top view of the logical device of the embodiment of the present invention, as shown in Fig. 2, heavy metal layer 120 is located at
On substrate 110, by carrying out photoetching and etching process to heavy metal layer 120, cross structure (hall bar structure) is formed it into.
Specifically, individual cross structure can be formed, the diesis structure mutually contacted in as shown can also be formed, in cross
The outboard end of structure is provided with corresponding electrode 161 (162,163), for being electrically connected and measuring.Its lateral leftmost side end
Electrode 161 is, for example, input terminal electrode, is grounded with the electrode 162 of the right end of 161 opposite side of electrode, with cross structure transverse direction
Another group of perpendicular longitudinal electrode 163 of electrode 161,162 is, for example, output terminal electrode, such as inputs rectangle arteries and veins to electrode 161
Electric current I is rushed, by the unusual Hall voltage of detecting electrode 163 to obtain output signal.
Fig. 3 is the instrumentation plan of the logical device of the embodiment of the present invention, in one end of heavy metal layer 120 access input electricity
I is flowed, input current I is, for example, rectangular pulse, and the other end of heavy metal 120 is grounded, and applies input voltage to oxide skin(coating) 150
V makes to form potential difference between oxide skin(coating) 150 and heavy metal layer 120, carries out electric field regulation.
Specifically, oxide interface has a significant impact to Quantum geometrical phase, and different degree of oxidation can change electric field pair
The polarity that magnetic anisotropy influences.It, can be effective by changing the degree of oxidation (degree of oxidation at more iron interfaces) of oxide skin(coating) 150
Regulate and control Quantum geometrical phase signal.By the oxidation for changing oxide skin(coating) 150 (more iron layer 140 and 150 interface of oxide skin(coating))
State changes magnetic anisotropy effect.For under-oxidized oxide skin(coating) 150 (deficient oxygenation level), it is each that forward voltage reduces magnetic
Anisotropy；For peroxidating oxide skin(coating) 150 (peroxidating interface) then on the contrary, forward voltage enhance magnetic anisotropy.It is this
Magnetic anisotropy effect allows us by the state of oxidation of control oxide layer 150 to be formed not to the dependence of voltage
Congener logical device (that is: N-shaped or p-type spin logical device), and further can be by by two kinds of spin logical devices
It is combined the complementary function for realizing logical device.
Further, it is connected in conjunction with Fig. 2, input current I with the electrode 161 of 120 cross structure outboard end of heavy metal layer, electricity
Pole 162 is grounded, and electrode 163 is used as output electrode, by the unusual Hall voltage of detecting electrode 163 to obtain the logical device
Output signal.
Fig. 4 a is the experimental features figure of logical device first embodiment of the present invention, the oxidation of the logical device of first embodiment
Such as peroxidating state of nitride layer 150, specifically, the oxide skin(coating) 150 in the embodiment select the oxide of Al to be made, the oxidation of Al
Time tOXFor example, 120 seconds, Fig. 4 a was the R of the logical devicexy- I curve, wherein the input voltage V of oxide skin(coating) 150 is for example
It can be converted between+3V and -3V.
When input voltage V is+3V or is slightly larger than+3V, the Quantum geometrical phase of the logical device of first embodiment is critical to be turned over
Turn electric current I11For 14mA, when input voltage V is less than or equal to -3V, critical reset current I21For 11mA.
When input current I is 12mA, it is between the critical reset current of the corresponding Quantum geometrical phase of two kinds of voltages.When
When V=+3V, Quantum geometrical phase resistance signal RXY(output signal) does not change direction with input current I and overturns；Work as V=-3V
When, Quantum geometrical phase signal changes direction with input current I and overturns, therefore the logical device of the visual first embodiment is p
Type spin logical device.
It can be obtained from the performance plot, it can be by making input current I be in the corresponding Quantum geometrical phase of two kinds of voltages
(i.e. I between critical reset current21< I < I11), so that the logical device is carried out logical operation work, the logic of first embodiment
Device is properly termed as p-type spin logical device, when input current I is greater than I21Less than I11When, input current I is the p-type logic device
The running current of part.
Further, as shown in connection with fig. 3, due to resistance RxyReact point of the magnetic moment on longitudinal direction z in ferromagnetic layer 130
Amount, initializes using magnetic moment of the external magnetic field to ferromagnetic layer 130 in logical device, keeps initial magnetic moment direction upward.Fig. 4 b
That is the truth table of the logical device of the first embodiment under original state thus, according to the direction of input current I and input voltage V
(positive and negative) transformation obtains its output signal R by detecting the unusual Hall voltage of electrode 163 of heavy metal layer 120p。
Fig. 5 a is the experimental features figure of logical device second embodiment of the present invention, the oxidation of the logical device of second embodiment
Nitride layer 150 for example owes oxidation state, and specifically, the oxide skin(coating) 150 in the embodiment selects the oxide of Al to be made, the oxidation of Al
Time tOXFor example, 30 seconds, Fig. 5 a was the R of the logical devicexy- I curve, wherein the input voltage V of oxide skin(coating) 150 is for example
It can be converted between+3V and -3V.
When input voltage V is+3V or is slightly larger than+3V, the Quantum geometrical phase of the logical device of second embodiment is critical to be turned over
Turn electric current I12For 11mA, when input voltage V is less than or equal to -3V, critical reset current I22For 14mA.
When input current I is 12mA, it is between the critical reset current of the corresponding Quantum geometrical phase of two kinds of voltages.When
When V=+3V, Quantum geometrical phase resistance signal RXY(output signal) changes direction with input current I and overturns；Work as V=-3V
When, Quantum geometrical phase signal does not change direction with input current I and overturns, therefore the logical device of the visual second embodiment is
N-shaped spin logical device.
It can be obtained from the performance plot, it can be by making input current I be in the corresponding Quantum geometrical phase of two kinds of voltages
(i.e. I between critical reset current12< I < I22), so that the logical device is carried out logical operation work, the logic of first embodiment
Device is properly termed as p-type spin logical device, when input current I is greater than I12Less than I22When, input current I is the N-shaped logic device
The running current of part.
Similarly, the initial magnetic moment direction of ferromagnetic layer 130 is upward in the logical device of the second embodiment.Fig. 5 b is i.e. thus
The truth table of the logical device of second embodiment under original state, according to the direction (positive and negative) of input current I and input voltage V
Transformation obtains its output signal R by detecting the unusual Hall voltage of electrode 163 of heavy metal layer 120n。
Fig. 6 is the production flow diagram of the logical device of the embodiment of the present invention, and production method includes:
S10 cleans substrate；
S20 prepares heavy metal layer；
S30 processes heavy metal layer, forms cross structure；
S40 prepares electrode in the outboard end of cross structure；
S50 prepares ferromagnetic layer；
S60 prepares more iron layer；
S70 prepares oxide skin(coating)；
Wherein, when preparing oxide skin(coating), oxide skin(coating) can be made in peroxidating by the state of oxidation of control oxide layer
State or deficient oxidation state, to be respectively formed p-type logical device or N-shaped logical device.
It will select metal Ta as the material of heavy metal layer 120 in following production method, select material of the Pt as electrode,
Select Co32Fe48B20As the material of ferromagnetic layer, BiFeO is selected3As the material of more iron layer, select the oxide of Al as oxygen
The material of compound layer.The material selection of each layer is merely illustrative, and of course, specification also can be selected, and above mentioned other can
Logical device described in the invention can also be equally made up in alternate material of same or similar method.
S10 cleans substrate.Substrate 110 is cleaned using supersonic wave cleaning machine.Substrate 110 is immersed into acetone
With carry out ultrasonic cleaning in methanol, each 10min, cleaning is three times altogether；Then substrate 110 is immersed in alcohol and carries out ultrasonic wave
Cleaning；Finally it is cleaned by ultrasonic with deionized water.With nitrogen gun by the drying of substrate 110 in case next step uses.
S20 prepares metal layer.Heavy metal layer 120 is prepared on substrate after the cleaning, heavy metal layer 120 for example selects metal
Ta is made, and specifically, the metal Ta film for growing about 5nm thickness on substrate by magnetron sputtering is further passed sequentially through and put
Sample vacuumizes, four entire magnetron sputterings of steps completion of electromagnetism sputtering and sampling.Parameter involved in magnetron sputtering includes:
The vacuum degree of sputtering chamber background must be higher than 10-5Pa, the temperature of electromagnetism sputtering are room temperature, sputtering pressure 0.1-1.5Pa.
S30 processes heavy metal layer, forms cross structure.The heavy metal layer 120 of preparation is subjected to electricity using negtive photoresist
Beamlet exposure, then ultrasonic cleaning is carried out to it, it carries out gluing and heating respectively again later, carries out electricity with electron beam straight-writing system
Beamlet exposure and developing fixing, the part of no photoresist protection is removed with Ar Ion Beam Etching, finally, by acetone soak and
Ultrasonic cleaning removes negtive photoresist, leaves 80 × 10 μm of diesis structure as shown in Figure 2 (hall bar structure).
S40 prepares electrode in the outboard end of cross structure (diesis structure).Electrode adds magnetic for example, by using electron beam exposure
The mode of control sputtering is made, and specifically, such as selects Pt as electrode material, the semi-finished product after step S30 are carried out ultrasound
Wave cleaning, carries out gluing and heating respectively later, carries out electron beam exposure and developing fixing with electron beam straight-writing system, then pass through
Acetone soak and ultrasonic cleaning remove the positive photoresist part of exposed portion, leave pit to grow electrode；Utilize magnetron sputtering
Method carries out electrode landfill, passes sequentially through setting-out, vacuumizes, four entire magnetron sputterings of steps completion of electromagnetism sputtering and sampling,
Form corresponding electrode.
Specifically, parameter involved in magnetron sputtering includes: that the vacuum degree of sputtering chamber background must be higher than 10-5Pa, electromagnetism
The temperature of sputtering is room temperature, and the film thickness of sputtering pressure 0.1-1.5Pa, the Pt electrode of preparation are about 5nm.It finally will be electric
The semi-finished product of pole landfill remove extra photoresist and insulating layer by acetone soak and ultrasonic cleaning, leave heavy metal layer
120 cross structure and Pt electrode.
S50 prepares ferromagnetic layer.About 1nm thickness is grown on the semi-finished product after step S40 by magnetron sputtering
Co32Fe48B20Film equally passes through setting-out, vacuumizes, four entire magnetron sputterings of steps completion of electromagnetism sputtering and sampling.Magnetic control
Parameter involved in sputtering includes: that sputtering chamber background vacuum must be higher than 10-5Pa, sputter temperature are room temperature, and sputtering pressure is
0.1-1.5Pa。
S60 prepares more iron layer.More iron layer are formed using pulsed laser deposition, specifically, by setting-out, vacuumize, heat,
Five steps of transmitting laser pulse and cooling sampling prepare more iron layer, the thickness of more iron layer about 2nm.It prepares involved by more iron layer
Parameter include: settling chamber's background vacuum must be higher than 10-4Pa, oxygen pressure is 1Pa-10Pa when deposition, and depositing temperature is 700-
750 DEG C, the energy of laser pulse is 100mJ-400mJ, laser frequency 1-5Hz when deposition.
Wherein, the exchange bias field that more iron layer and ferromagnetic layer are formed, the logical device itself can provide weak bias magnetic field,
Magnetic storage is carried out without providing external magnetic field.
S70 prepares oxide skin(coating)；The metal Al for growing about 1.5nm thickness in more iron layer by magnetron sputtering, equally passes through
Setting-out vacuumizes, four entire magnetron sputtering steps of steps completion of electromagnetism sputtering and sampling.Basic ginseng in magnetron sputtering technique
Number includes: that sputtering chamber background vacuum must be higher than 10-5Pa, electromagnetism sputter temperature be room temperature, sputtering pressure 0.1-1.5Pa,
After growing metal Al in more iron layer, then under the pressure of 4Pa and the power of 30W, the metal Al of growth is made to be exposed to O2Plasma
Body kind, to form the oxide skin(coating) 150 of different degree of oxidation according to different oxidization time tox.
Further, due to the resistance R of heavy metal layer 120xyReact point of the magnetic moment on longitudinal direction z in ferromagnetic layer 130
Amount, initialized using magnetic moment of the external magnetic field to ferromagnetic layer 130 in logical device, make initial magnetic moment direction upwards or to
Under.
The logical device using input voltage V, that is, controllable ferromagnetic layer magnetic moment direction without by external magnetic field, i.e.,
The signal of application input voltage V initialization logic device can be passed through；And the logical device is imitated using electromagnetism Quantum geometrical phase
It answers, Quantum geometrical phase critical current is regulated and controled by electric field, the energy consumption of the logical device can be effectively reduced.
Fig. 7 a and Fig. 7 b are respectively the first embodiment of logic module of the present invention and the schematic diagram of second embodiment, such as Fig. 7 a
It is shown, a p-type logical device with peroxidating state oxide skin(coating) 151 and one are had and owe oxidation state oxide skin(coating) 152
N-shaped logical device be connected in series, specifically, the heavy metal layer and oxide skin(coating) of two logical devices are connected in series respectively, and p-type is patrolled
Volume device is preceding, and N-shaped logical device is in rear, the electrode opposite with input electrode 161 in the heavy metal layer 120 of p-type logical device
162 are electrically connected with the input electrode 161 of N-shaped logical device, the oxide skin(coating) of p-type logical device and N-shaped logical device with it is defeated
Enter voltage V to be connected, the direction of change input voltage V, selective control one of which logical device can be passed through.
Specifically, when the initial magnetic moment direction of the ferromagnetic layer 130 of two logical devices is identical and upward, work as input current
I (such as I=12mA) meets the running current of p-type spin logical device and the normal work of N-shaped spin logical device simultaneously
Make electric current, then it can be by changing the direction of input voltage V by the state or n of input current I selectively control p-type logical device
The state of type logical device, to realize the complementary function of logical device, accordingly, which has logical complement function
Energy.
As shown in Figure 7b, the p-type logical device equally by one with peroxidating state oxide skin(coating) 151 and one, which have, owes
The N-shaped logical device of oxidation state oxide skin(coating) 152 is connected in series, and connection type is similar with Fig. 7 a, but N-shaped logic in this embodiment
Device is preceding, and p-type logical device is rear, and the initial magnetic moment direction of the ferromagnetic layer 130 of two logical devices is identical and downwards, equally
Ground, the embodiment can also realize corresponding logical complement function.
It is only that a p-type logical device and a N-shaped logical device are connected in series the logic module of composition in diagram, certainly
Ground, logic module can also be composed in series by a similar method by multiple p-type logical devices and multiple N-shaped logical devices, and two kinds
Putting in order for logical device can also be according to circumstances adjusted, and further, the magnetic moment inceptive direction of ferromagnetic layer 130 can also root
It is adjusted accordingly according to demand.
Fig. 8 is truth table corresponding to the logic module of the embodiment of the present invention, has recorded ferromagnetic layer respectively in the truth table
When 130 magnetic moment inceptive direction upward (↑) and magnetic moment inceptive direction downward (↓), under different input conditions, N-shaped logical device and p
The output of type logical device.
The first embodiment and second embodiment of logic module shown in comparison diagram 7a and Fig. 7 b, in conjunction with the truth table of Fig. 8,
In the first embodiment of logic module as shown in Figure 7a, as input current IIN(such as IIN=12mA) meet p-type simultaneously certainly
Revolve logical device running current and N-shaped spin logical device running current when, be only capable of in input current IINFor
It realizes that the single logical device output in component is 0 when reversed, specifically, works as IIN=12mA and be it is reversed, voltage V is also reversed
When, corresponding output Rp=0, Rn=1, work as IIN=12mA and be it is reversed, when voltage V is positive, corresponding output Rp=1, Rn=
0, remaining IINIn the case where=12mA, no matter its is forward and reverse and voltage V forward and reverse, corresponding output RpAnd RnIt is 1.
The logic module of the first embodiment can be by control input current and input voltage, so that the logic of the specified type in component
Device output is 0.
In the second embodiment of logic module as shown in Figure 7b, as input current IIN(such as IIN=12mA) simultaneously
Meet p-type spin logical device running current and N-shaped spin logical device running current when, be only capable of inputting
Electric current IINSingle logical device output to be realized in component when forward direction is 1, specifically, works as IIN=12mA and for forward direction, voltage
When V is reversed, corresponding output Rp=1, Rn=0, work as IIN=12mA and for forward direction, when voltage V is also forward direction, corresponding output
Rp=0, Rn=1, remaining IINIn the case where=12mA, no matter its is forward and reverse and voltage V forward and reverse, corresponding output RpWith
RnIt is 0.The logic module of the second embodiment can be by control input current and input voltage, so that the specified class in component
The logical device output of type is 1.
Further, the initialization and information erasing operation of logical device are also listed in truth table as shown in Figure 8,
Initialization and information erasing: when input current I (such as I=15mA) meets both greater than the normal work electricity of p-type spin logical device
When flowing, and being greater than the running current of N-shaped spin logical device, no matter voltage is Direct/Reverse, and two kinds of devices all can be simultaneously
It is controlled, to carry out initialization and/or information erasing, corresponding logic module to logical device by this input current
Allow while initializing and wiping all information in each logical device.
Logical device provided by the invention has the following advantages that or the utility model has the advantages that by using mica monocrystalline thin slice, polyethers
The flexible materials such as sulfone (PES), polyethylene terephthalate (PI) make substrate, make corresponding logical device and traditional devices
It is lighter, anti-extrusion, flexible compared to having many advantages, such as；
The logical device can adjust the state of oxidation of its oxide skin(coating) as needed, so that the N-shaped or p-type needed for being formed are patrolled
Device is collected, to execute N-shaped or p-type logic function.Production method corresponding to the logical device also has very strong practicability.
Further, the logic module being composed by two kinds of logical devices can directly execute N-shaped, p-type logic function
Can, integrate N-shaped, p-type logic function, and have there are two types of initialization while device information and wipe function, and operation side
Just quick, the logical complement of logic module also further enhances its reliability.
Based on logic module provided by the invention, not only there is complementary logic calculation function, there are also information initializing or wipings
Except function, have broad application prospects in multi-functional or programmable spin logical device field.
The present invention realizes regulation of the electric field to Quantum geometrical phase critical current by using multi-iron material, so that corresponding
Logical device can at room temperature to Quantum geometrical phase signal carry out Effective Regulation.
The effect for changing logical device using different oxidation state interfaces (oxide skin(coating)), makes the positive and negative of input voltage (electric field)
Difference is generated to the regulation degree of Quantum geometrical phase critical current, to can reach N-shaped or p-type logical operation function, is obtained
Light, portable, low-power consumption logical device, can also be produced based on this logical device can fast reading and writing and high storage density deposit
Memory device.
Above-described embodiment is citing of the invention, although disclosing the embodiment of the present invention and attached drawing for the purpose of illustration,
But it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, respectively
Kind replacement, change and modification are all possible.Therefore, the present invention should not be limited to embodiment and attached drawing disclosure of that.
Claims (10)
1. a kind of logical device characterized by comprising
Substrate, for carrying the logical device, the substrate is flexible substrate；
Heavy metal layer is located on the substrate, with a thickness of 3-10 nanometers；
Ferromagnetic layer is located on the heavy metal layer, with a thickness of 1-30 nanometers；
More iron layer are located on the ferromagnetic layer, with a thickness of 2-200 nanometers；
Oxide skin(coating) is located in more iron layer, with a thickness of 1-10 nanometers；
Wherein, the heavy metal layer includes at least one cross structure, and the outboard end of the cross structure is provided with correspondence
Electrode, be applied to the direction of voltage between the oxide skin(coating) and the heavy metal layer by changing, change the heavy metal
The resistance of layer.
2. logical device according to claim 1, which is characterized in that the oxide skin(coating) is peroxidating state or deficient oxidation state
One of.
3. logical device according to claim 2, which is characterized in that the outboard end of the cross structure includes an input
Electrode, another termination electrode ground connection opposite with input terminal, the cross structure and another two on the perpendicular direction of input electrode
The electrode at end is output end, by detecting unusual Hall voltage as output signal from the output end.
4. logical device according to claim 3, which is characterized in that the oxide skin(coating) is peroxidating state, the oxidation
When being forward voltage between nitride layer and the heavy metal layer, the Quantum geometrical phase critical current of the layer is I11, institute
When stating between oxide skin(coating) and the heavy metal layer as negative voltage, the Quantum geometrical phase critical current of the layer is
I21, wherein I11Greater than I21。
5. logical device according to claim 4, which is characterized in that be passed through input current I to input electrode, work as I21< I
< I11When, under forward voltage, the output signal does not change with the change in the direction input current I, under negative voltage, institute
It is reversed with the change in the direction input current I to state output signal.
6. logical device according to claim 3, which is characterized in that the peroxide layer is to owe oxidation state, the oxygen
When being forward voltage between compound layer and the heavy metal layer, the Quantum geometrical phase critical current of the layer is I12,
When being negative voltage between the oxide skin(coating) and the heavy metal layer, the Quantum geometrical phase critical current of the layer
For I22, wherein I12Less than I22。
7. logical device according to claim 6, which is characterized in that be passed through input current I to input electrode, work as I12< I
< I22When, under forward voltage, the output signal is reversed with the change in the direction input current I, described under negative voltage
Output signal does not change with the change in the direction input current I.
8. a kind of logic module characterized by comprising at least two logical device as described in claim 1；Wherein, described
It is peroxidating state and oxide layer is to owe two kinds of oxidation state that logical device, which includes oxide skin(coating), and two kinds of logical devices are mutually gone here and there
Connection, the heavy metal layer and oxide skin(coating) of two kinds of logical devices are connected in series respectively, by change the oxide skin(coating) and
Logical device described in the control wherein at least one of voltage direction selectivity between the heavy metal layer.
9. a kind of production method of logical device, which is characterized in that the production method includes:
Substrate is cleaned；
Heavy metal layer is prepared on substrate after the cleaning；
Photoetching and etching are carried out to the heavy metal layer, form it into cross structure；
In the outboard end of the cross structure, corresponding electrode is set；
Ferromagnetic layer is prepared on the heavy metal layer；
More iron layer are prepared on the ferromagnetic layer；
Oxide skin(coating) is prepared in more iron layer；
Wherein, when preparing oxide skin(coating) in more iron layer, by the state of oxidation of control oxide layer the oxide skin(coating) can be made to be in
Oxidation state or deficient oxidation state, to be respectively formed p-type logical device or N-shaped logical device.
10. the production method of memory device according to claim 9, which is characterized in that
The substrate is by polyether sulfone, polyethylene terephthalate, mylar's rouge, polydimethylsiloxanes, poly- third
At least one of the own diester of alkene, mica material is made；
The heavy metal layer is made of Pt, W, at least one of Ta material；
The electrode is made of Pt, W, at least one of Ta material；
The material of the ferromagnetic layer is, for example, CoFeB, CoFe, NiFe, FeCrCo, at least one of FeCoV；
More iron layer include BiFeO3、GaFeO3、BiCrO3、TbMnO3、Bi2FeCrO6、BiMnO3、HoMn2O5、HoMn2O5、
YbMn2O5、ScMn2O5、YMn2O5、GaMn2O5、DyMn2O5、ErMn2O5、HoMnO3、YbMnO3、ScMnO3、YMnO3、GaMnO3、
DyMnO3、ErMnO3At least one of；
The material of the oxide skin(coating) is at least one of the oxide of Al, the oxide of Si, the oxide of Mg.
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