CN110265279B - Workpiece side-feeding type double-vacuum-chamber ion beam processing system - Google Patents
Workpiece side-feeding type double-vacuum-chamber ion beam processing system Download PDFInfo
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- CN110265279B CN110265279B CN201910483330.3A CN201910483330A CN110265279B CN 110265279 B CN110265279 B CN 110265279B CN 201910483330 A CN201910483330 A CN 201910483330A CN 110265279 B CN110265279 B CN 110265279B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
Abstract
The invention discloses a workpiece side-feeding type double-vacuum-chamber ion beam processing system which comprises a main vacuum chamber and an auxiliary vacuum chamber which are communicated with each other through a gate valve, wherein an ion source is arranged in the main vacuum chamber, a workpiece moving mechanism for driving a workpiece to move is arranged in the auxiliary vacuum chamber, the auxiliary vacuum chamber is positioned on the side direction of the main vacuum chamber, a plane M where the gate valve is positioned is basically parallel to the irradiation direction of the ion source, a polished surface N of the workpiece to be processed on the workpiece moving mechanism is basically vertical to the irradiation direction of the ion source, and the movement direction of the workpiece moving mechanism is basically vertical to the irradiation direction of the ion source. The workpiece side-feeding type double-vacuum-chamber ion beam processing system has the advantages of small gate valve size, optimized whole machine structure and the like.
Description
Technical Field
The invention relates to the technical field of ion beam processing in a vacuum environment, in particular to a workpiece side-feeding type double-vacuum-chamber ion processing system.
Background
At present, ion beam shape-modifying processing equipment is usually designed by adopting a single vacuum chamber or a double vacuum chamber. For single vacuum chamber ion beam processing equipment, the vacuum chamber needs to be broken and then vacuumized again each time a workpiece is loaded and unloaded, which increases the processing time and reduces the processing efficiency. The double-vacuum-chamber ion beam processing system comprises a main vacuum chamber and an auxiliary vacuum chamber, wherein a workpiece is processed through the main vacuum chamber, the workpiece is loaded and unloaded through the auxiliary vacuum chamber, and the auxiliary vacuum chamber is only required to be broken in the whole processing process, but not the main vacuum chamber, so that the re-vacuumizing time of the main vacuum chamber is reduced, and the processing efficiency is greatly improved. In addition, the double-vacuum-chamber system keeps the vacuum of the main vacuum chamber all the time, so that parts such as an ion source and the like in the double-vacuum-chamber system are better protected in vacuum, and the subsequent processing technology is more facilitated. Thus, the advantages of the dual vacuum chamber ion beam processing system are self evident.
Currently, there are two main approaches to dual vacuum chamber ion beam processing systems. One is a workpiece upside down type scheme, the workpiece needs to be hung upside down above an ion source, the operation difficulty of workpiece loading and unloading is undoubtedly increased, especially for large-size workpieces, the upside down type operation is difficult, and a hook is easy to damage the mirror surface of the workpiece. The other is a vertical type scheme of the workpiece, such as the invention disclosed in the application number CN201811261305.2, which is a double vacuum chamber ion beam shaping processing system. The workpiece is vertically placed, and the workpiece mirror surface is positioned on the side surface, so that the defect of the workpiece upside-down placing mode is overcome, the difficulty in loading and unloading the workpiece is greatly reduced, and the workpiece mirror surface is better protected. Meanwhile, the vertical placement of the workpiece is also convenient for butt joint with a detection device of a horizontal light path. Therefore, the vertical type scheme of the workpiece is superior to the inverted type scheme.
However, in the vertical workpiece solution, the front surface of the workpiece mirror surface passes through the gate valve located between the two vacuum chambers, so the size of the gate valve is larger than that of the workpiece mirror surface, the size of the gate valve is proportional to the size of the workpiece mirror surface, if a large-size workpiece is to be processed, the required gate valve is large, and the large-size gate valve is expensive.
Disclosure of Invention
The invention provides a workpiece side-feeding type double-vacuum-chamber ion processing system, which at least solves the problem that a gate valve in the prior art is overlarge in size. The processing system is particularly suitable for processing large-size workpieces.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
a workpiece side-feeding type double-vacuum-chamber ion beam processing system comprises a main vacuum chamber and an auxiliary vacuum chamber which can be communicated with each other through a gate valve, wherein an ion source is arranged in the main vacuum chamber, a workpiece moving mechanism for driving a workpiece to move is arranged in the auxiliary vacuum chamber, the auxiliary vacuum chamber is located on the side direction of the main vacuum chamber, a plane M where the gate valve is located is basically parallel to the irradiation direction of the ion source, a polished surface N set on the workpiece moving mechanism for processing is basically vertical to the irradiation direction of the ion source, and the movement direction of the workpiece moving mechanism is basically vertical to the irradiation direction of the ion source. The workpiece laterally passes through the gate valve, the width of the gate valve is determined by the thickness of the workpiece, and the required gate valve is smaller due to the smaller thickness of the workpiece, so that the size of the gate valve can be reduced, and the structure of the whole machine is optimized. Meanwhile, the required auxiliary vacuum chamber is smaller, and the size of the auxiliary vacuum chamber can be reduced. In addition, the gate valve has small size, light weight and easier operation.
Preferably, in the workpiece side-entry type double-vacuum-chamber ion beam processing system, the transmission mechanism of the workpiece movement mechanism is a screw transmission mechanism, a push rod transmission mechanism or a friction transmission mechanism.
Preferably, in the above workpiece side-entry type double-vacuum-chamber ion beam processing system, the workpiece moving mechanism includes an auxiliary vacuum chamber guide rail provided in the auxiliary vacuum chamber, a main vacuum chamber guide rail provided in the main vacuum chamber, a slide carriage capable of moving along the auxiliary vacuum chamber guide rail and the main vacuum chamber guide rail, and a driving device for driving the slide carriage to move, the slide carriage is connected with the driving device through a transmission mechanism, the main vacuum chamber guide rail is provided in the direction in which the auxiliary vacuum chamber guide rail extends, and the workpiece to be processed is mounted on the slide carriage through a clamp. Under the drive of the driving device, the slide carriage drives the workpiece to move among the main vacuum chamber, the gate valve and the auxiliary vacuum chamber, and the slide carriage is erected on the guide rail of the auxiliary vacuum chamber and the guide rail of the main vacuum chamber to provide guidance for the movement of the slide carriage so as to keep the continuity and the stability of the movement of the workpiece.
Preferably, in the workpiece side-entry type double-vacuum-chamber ion beam processing system, the transmission mechanism includes a plurality of friction shafts, the friction shafts are arranged on the auxiliary vacuum chamber guide rail and the main vacuum chamber guide rail, the friction shafts are arranged along the extension direction of the guide rail and are perpendicular to the guide rail, the friction shafts are connected with the driving device, the bottom of the slide carriage is in contact with the friction shafts, and the length of the slide carriage is greater than the distance between any two adjacent friction shafts. The width of the slide carriage is corresponding to the thickness of the workpiece, so that the width of the slide carriage is smaller, the friction shaft is used for driving the slide carriage to move, and the moving mechanism is simple in structure and reliable in movement.
Preferably, in the workpiece side-entry type double-vacuum-chamber ion beam processing system, the friction shafts are arranged at equal intervals, and the length of the slide carriage is greater than twice the interval between the friction shafts. The slide carriage is in contact with at least two friction shafts, so that the slide carriage can obtain more power, the moving speed is higher, and the continuity and the stability of the movement of the workpiece are better.
Preferably, in the workpiece side-entry type double-vacuum-chamber ion beam processing system, the plurality of driving devices are arranged on the side wall of the same side of the main vacuum chamber and the auxiliary vacuum chamber at intervals, the side wall is perpendicular to the plane M where the gate valve is located, and the guide rail of the auxiliary vacuum chamber and the guide rail of the main vacuum chamber are as close to the side wall as possible. The distance between the auxiliary vacuum chamber guide rail and the main vacuum chamber guide rail and the driving device is short, so that the length of the friction shaft is short, and the transmission is reliable.
Preferably, in the workpiece side-entry type ion beam processing system with two vacuum chambers, the driving device is a rotating motor, the driving device is disposed outside the chamber, and the friction shaft is connected to the driving device through a magnetic fluid sealing transmission body disposed on a chamber wall. The motor is arranged outside the vacuum chamber, so that the vacuum motor can be replaced by a common motor, and the cost is reduced. The motor is assembled and disassembled, and the operation is easier. The motor moves out of the vacuum chamber, freeing more space for the chamber.
Preferably, in the workpiece side-entry dual-vacuum-chamber ion beam processing system, the gate valve is mounted on the wall of the main vacuum chamber to occupy a width J substantially equal to the width K of the sub-vacuum chamber, and the width is mainly determined by the thickness of the workpiece. The thickness of the workpiece is smaller, so that the width occupied by the installation of the gate valve on the wall of the main vacuum chamber and the width of the auxiliary vacuum chamber are smaller, and the sizes of the gate valve and the auxiliary vacuum chamber can be reduced.
Preferably, in the workpiece side-entry dual-vacuum-chamber ion beam processing system, the gate valve is mounted on the wall of the main vacuum chamber so as to occupy a partial region of which the width J only covers the wall of the main vacuum chamber; a window is arranged on the region of the chamber wall of the main vacuum chamber not occupied by the gate valve; the head part for opening and closing the gate valve extends to the outer side area opposite to the window. The width of the gate valve is small, the region of the side wall of the whole main vacuum chamber is not occupied, a window is arranged in the region which is not occupied by the gate valve on the chamber wall of the main vacuum chamber and is arranged beside the gate valve, the main vacuum chamber is observed through the window, a better visual field can be obtained, the processing condition of a workpiece can be more clearly mastered, and the processing precision and efficiency are improved.
Preferably, in the workpiece side-entry type double-vacuum-chamber ion beam processing system, an ion source moving mechanism for driving an ion source to move is arranged in the main vacuum chamber, the ion source moving mechanism includes a linear moving system and a rotating system, the linear moving system includes a Z-direction moving unit and an X-direction moving unit which can make linear movement on a horizontal plane and a Y-direction moving unit which can move along a vertical direction, a moving direction of the Z-direction moving unit is perpendicular to a moving direction of the workpiece moving mechanism, a moving direction of the X-direction moving unit is parallel to a moving direction of the workpiece moving mechanism, and the rotating system includes an a-direction moving unit which can rotate around the Y-direction and a B-direction moving unit which can rotate around the Z-direction.
Compared with the prior art, the invention has the advantages that:
(1) the workpiece side-feeding type double-vacuum-chamber ion beam processing system has the advantages that the workpiece is vertically placed, the mirror surface of the workpiece is arranged on the side surface, and the workpiece is convenient and safe to operate.
(2) According to the workpiece side-feeding type double-vacuum-chamber ion beam processing system, the workpiece laterally passes through the gate valve, the width of the gate valve is determined by the thickness of the workpiece and does not depend on the width of the workpiece, and the required gate valve is smaller due to the smaller thickness of the workpiece, so that the size of the gate valve can be reduced, and the structure of the whole machine is optimized.
In addition to the objects, features and advantages described above, other objects, features and advantages of the present invention are also provided. The present invention will be described in further detail below with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic configuration (front face) of a workpiece side double vacuum chamber ion beam processing system according to a preferred embodiment of the present invention.
Fig. 2 is a schematic view (back side) of the outer configuration of the workpiece side double vacuum chamber ion beam processing system according to the preferred embodiment of the present invention.
Fig. 3 is a schematic view of the internal structure of a workpiece side-entry dual vacuum chamber ion beam processing system according to a preferred embodiment of the present invention (with the main and sub-vacuum chamber doors removed).
Fig. 4 is a top view of the internal structure of the workpiece side double vacuum chamber ion beam processing system according to the preferred embodiment of the present invention (E is the workpiece moving direction, and F is the ion source irradiation direction).
Fig. 5 is a schematic view of the internal structure of the workpiece side-entry dual vacuum chamber ion beam processing system according to the preferred embodiment of the present invention (with the main vacuum chamber, the sub-vacuum chamber, and the gate valve removed).
Fig. 6 is a schematic view of the ion source motion mechanism of the workpiece side-entry dual vacuum chamber ion beam processing system of the preferred embodiment of the present invention.
Illustration of the drawings:
1. a main vacuum chamber; 2. a secondary vacuum chamber; 3. a gate valve; 4. an ion source; 5. an ion source movement mechanism; 51. a Z-direction motion unit; 52. an X-direction motion unit; 53. a Y-direction moving unit; 54. an A-direction moving unit; 55. a B-direction motion unit; 6. a workpiece movement mechanism; 61. a sub-vacuum chamber guide rail; 62. a main vacuum chamber guide rail; 63. a slide carriage; 64. a friction shaft; 65. the magnetic fluid seals the transmission body; 66. a drive device; 7. a clamp; 8. a workpiece; 9. a window; 10. a side wall.
Detailed Description
The embodiments of the invention will be described in detail below with reference to the drawings, but the invention can be implemented in many different ways as defined and covered by the claims.
Referring to fig. 1 to 6, the workpiece side-entry dual chamber ion beam processing system of the present embodiment includes a main vacuum chamber 1, a sub-vacuum chamber 2, and a gate valve 3 connecting them. An ion source 4 and an ion source moving mechanism 5 for driving the ion source 4 to move are arranged in the main vacuum chamber 1. The sub vacuum chamber 2 is provided therein with a jig 7 to which a workpiece 8 can be attached and detached, and a workpiece moving mechanism 6 which moves the workpiece 8 and the jig 7 together. The workpiece 8 is vertically placed, and the side face of the workpiece is opposite to the gate valve 3. The auxiliary vacuum chamber 2 is positioned at the side of the main vacuum chamber 1, the plane M of the gate valve 3 is basically parallel to the irradiation direction of the ion source 4, the polishing surface N of the workpiece 8 to be processed on the workpiece motion mechanism 6 is basically vertical to the irradiation direction of the ion source 4, and the motion direction of the workpiece motion mechanism 6 is basically vertical to the irradiation direction of the ion source 4. Since the workpiece 8 located in the sub-vacuum chamber 2 laterally passes through the gate valve 3 to enter and exit the main vacuum chamber 1. The width of the gate valve 3 depends on the thickness of the workpiece 8, the thickness of the workpiece 8 being smaller and therefore the size of the gate valve 3 being smaller.
In this embodiment, in order to transfer the workpiece 8 between the sub-vacuum chamber 2 and the main vacuum chamber 1 across the gate valve 3, the workpiece moving mechanism 6 is provided with a pair of sub-vacuum chamber guide rails 61 in the sub-vacuum chamber 2, a pair of main vacuum chamber guide rails 62 is also provided in the main vacuum chamber 1, the jig 7 carrying the workpiece 8 is mounted on a carriage 63, the carriage 63 is movable along the sub-vacuum chamber guide rails 61 and the main vacuum chamber guide rails 62, and when the gate valve 3 is opened, the carriage 63 is movable between the sub-vacuum chamber guide rails 61 and the main vacuum chamber guide rails 62 through a gap at the gate valve 3, so that the workpiece 8 can enter and exit the main vacuum chamber 1 from the sub-vacuum chamber 2.
In this embodiment, in order to provide power for the movement of the slide carriage 63, the driving device 66 is a plurality of rotating motors as the driving force source, the plurality of rotating motors are arranged on the side wall 10 of the same side of the main vacuum chamber 1 and the auxiliary vacuum chamber 2 at intervals, the side wall 10 is perpendicular to the plane M of the gate valve 3, the auxiliary vacuum chamber guide rails 61 and the main vacuum chamber guide rails 62 are as close to the side wall 10 as possible, the rotating motors are arranged outside the vacuum chambers, and the friction shafts 64 in the vacuum chambers are driven to rotate by the magnetic fluid seal transmission body 65 arranged on the vacuum wall. The rotation of the friction shaft 64 will bring the carriage 63, which is in contact with it, to move along the auxiliary vacuum chamber guide 61 or the main vacuum chamber guide 62. In order to ensure that the carriage 63 can move between the sub-vacuum chamber 2 and the main vacuum chamber 1, a plurality of friction shafts 64 are provided on the sub-vacuum chamber guide rail 61 and the main vacuum chamber guide rail 62, the friction shafts 64 being arranged in the direction in which the guide rails extend and perpendicular to the guide rails. The friction shafts 64 are arranged at equal intervals, and the length of the slide carriage 63 is more than twice the interval of the friction shafts 64. In the present embodiment, one rotating electric machine is provided for each friction shaft 64. In other embodiments, only 1 or 2 rotary motors may be used to simultaneously drive rotation of the plurality of friction shafts 64 via a pulley drive or other transmission.
In this embodiment, the installation of the gate valve 3 on the chamber wall of the main vacuum chamber 1 occupies a width J substantially equal to the width K of the sub vacuum chamber 2, and the width is mainly determined by the thickness of the workpiece 8.
In the embodiment, the installation of the gate valve 3 on the chamber wall of the main vacuum chamber 1 only covers a partial area of the chamber wall of the main vacuum chamber 1 by the width J; a window 9 is arranged on the area of the chamber wall of the main vacuum chamber 1 not occupied by the gate valve 3; the head of the gate valve 3 for opening and closing extends to the outer side area opposite to the window 9.
In this embodiment, the ion source moving mechanism 5 includes 3 linear moving shafts X, Y and Z for driving the ion source 4 to move, and further includes 2 rotating units a and B. As shown in fig. 6 in particular, the Z-direction moving unit 51 and the X-direction moving unit 52 move on a horizontal plane, the moving direction of the Z-direction moving unit 51 is perpendicular to the moving direction of the workpiece moving mechanism 6, the moving direction of the X-direction moving unit 52 is parallel to the moving direction of the workpiece moving mechanism 6, and the Y-direction moving unit 53 moves in a vertical direction; the a-direction moving unit 54 rotates in the X direction, and the B-direction moving unit 55 rotates in the Y direction. The Z-direction moving unit 51 is located at the lowest position, and includes an X-direction moving unit 52, a B-direction moving unit 55, a Y-direction moving unit 53, and an a-direction moving unit 54 in this order from the bottom up. When the ion beam is processed, the ion source movement mechanism 5 with 5 degrees of freedom drives the ion source 4 to move, so that the ion beam emitted by the ion source 4 vertically enters the mirror surface of the workpiece 8 at a fixed target distance, and high-precision processing is realized.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above-described embodiments. Modifications and variations that may occur to those skilled in the art without departing from the spirit and scope of the invention are to be considered as within the scope of the invention.
Claims (7)
1. The utility model provides a work piece side entry formula double vacuum room ion beam processing system, includes main vacuum room (1) and vice vacuum room (2) that can communicate each other through push-pull valve (3), be equipped with ion source (4) in main vacuum room (1), be equipped with work piece motion (6) that drive work piece (8) motion in vice vacuum room (2), its characterized in that: the auxiliary vacuum chamber (2) is positioned at the side of the main vacuum chamber (1), the plane M of the gate valve (3) is parallel to the irradiation direction of the ion source (4), the polishing surface N of the workpiece (8) to be processed on the workpiece motion mechanism (6) is vertical to the irradiation direction of the ion source (4), and the motion direction of the workpiece motion mechanism (6) is vertical to the irradiation direction of the ion source (4); the workpiece (8) is vertically arranged, and the side face of the workpiece is opposite to the gate valve (3);
the installation occupation width J of the gate valve (3) on the wall of the main vacuum chamber (1) is equivalent to the width K of the auxiliary vacuum chamber (2), and the width is mainly determined by the thickness of the workpiece (8); the installation of the gate valve (3) on the chamber wall of the main vacuum chamber (1) only covers partial area of the chamber wall of the main vacuum chamber (1) with the occupied width J; a window (9) is arranged on the chamber wall of the main vacuum chamber (1) in the area not occupied by the gate valve (3); the head part for opening and closing the gate valve (3) extends to the outer side area opposite to the window (9);
the ion source moving mechanism (5) for driving the ion source (4) to move is arranged in the main vacuum chamber (1), the ion source moving mechanism (5) comprises a linear moving system and a rotating system, the linear moving system comprises a Z-direction moving unit (51) and an X-direction moving unit (52) which can do linear movement on a horizontal plane and a Y-direction moving unit (53) which can move along a vertical direction, the moving direction of the Z-direction moving unit (51) is perpendicular to the moving direction of the workpiece moving mechanism (6), the moving direction of the X-direction moving unit (52) is parallel to the moving direction of the workpiece moving mechanism (6), and the rotating system comprises an A-direction moving unit (54) which can rotate around the X direction and a B-direction moving unit (55) which can rotate around the Y direction.
2. The workpiece side entry dual vacuum chamber ion beam processing system of claim 1, wherein: the transmission mechanism of the workpiece motion mechanism (6) is a screw rod transmission mechanism, a push rod transmission mechanism or a friction transmission mechanism.
3. The workpiece side entry dual vacuum chamber ion beam processing system of claim 2, wherein: the workpiece moving mechanism (6) comprises an auxiliary vacuum chamber guide rail (61) arranged in the auxiliary vacuum chamber (2), a main vacuum chamber guide rail (62) arranged in the main vacuum chamber (1), a slide carriage (63) capable of moving along the auxiliary vacuum chamber guide rail (61) and the main vacuum chamber guide rail (62), and a driving device (66) for driving the slide carriage (63) to move, wherein the slide carriage (63) is connected with the driving device (66) through the transmission mechanism, the main vacuum chamber guide rail (62) is arranged in the extending direction of the auxiliary vacuum chamber guide rail (61), and a workpiece (8) to be processed is arranged on the slide carriage (63) through a clamp (7).
4. The workpiece side entry dual vacuum chamber ion beam processing system of claim 3, wherein: the transmission mechanism comprises a plurality of friction shafts (64), the friction shafts (64) are arranged on the auxiliary vacuum chamber guide rail (61) and the main vacuum chamber guide rail (62), the friction shafts (64) are arranged along the extension direction of the guide rails and are perpendicular to the guide rails, the friction shafts (64) are connected with the driving device (66), the bottom of the slide carriage (63) is in contact with the friction shafts (64), and the length of the slide carriage (63) is larger than the distance between any two adjacent friction shafts (64).
5. The workpiece side entry dual vacuum chamber ion beam processing system of claim 4, wherein: the friction shafts (64) are arranged at equal intervals, and the length of the slide carriage (63) is more than twice of the interval of the friction shafts (64).
6. The workpiece side entry dual vacuum chamber ion beam processing system of claim 3, wherein: the driving devices (66) are arranged in plurality, the driving devices (66) are arranged on the side wall (10) on the same side of the main vacuum chamber (1) and the auxiliary vacuum chamber (2) at intervals, the side wall (10) is perpendicular to the plane M where the gate valve (3) is located, and the auxiliary vacuum chamber guide rail (61) and the main vacuum chamber guide rail (62) are close to the side wall (10) as much as possible.
7. The workpiece side dual vacuum chamber ion beam processing system of claim 4, the drive means (66) being a rotary motor, the drive means (66) being disposed outside the chamber, the friction shaft (64) being connected to the drive means (66) by a magnetohydrodynamic seal actuator (65) disposed on the chamber wall.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910483330.3A CN110265279B (en) | 2019-06-04 | 2019-06-04 | Workpiece side-feeding type double-vacuum-chamber ion beam processing system |
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| CN201910483330.3A CN110265279B (en) | 2019-06-04 | 2019-06-04 | Workpiece side-feeding type double-vacuum-chamber ion beam processing system |
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| CN110265279B true CN110265279B (en) | 2021-07-20 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102744654A (en) * | 2012-07-30 | 2012-10-24 | 中国人民解放军国防科学技术大学 | Double-vacuum chamber ion beam polishing system and polishing method |
| CN105757201A (en) * | 2016-05-06 | 2016-07-13 | 韩晓钢 | Friction transmission structure and application thereof |
| CN109243952A (en) * | 2018-10-26 | 2019-01-18 | 长沙埃福思科技有限公司 | Dual-vacuum chamber ion beam correction of the flank shape system of processing and modification processing |
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2019
- 2019-06-04 CN CN201910483330.3A patent/CN110265279B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102744654A (en) * | 2012-07-30 | 2012-10-24 | 中国人民解放军国防科学技术大学 | Double-vacuum chamber ion beam polishing system and polishing method |
| CN105757201A (en) * | 2016-05-06 | 2016-07-13 | 韩晓钢 | Friction transmission structure and application thereof |
| CN109243952A (en) * | 2018-10-26 | 2019-01-18 | 长沙埃福思科技有限公司 | Dual-vacuum chamber ion beam correction of the flank shape system of processing and modification processing |
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