CN110243396B - Dual mode sensing unit and dual mode sensor - Google Patents
Dual mode sensing unit and dual mode sensor Download PDFInfo
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- CN110243396B CN110243396B CN201910549278.7A CN201910549278A CN110243396B CN 110243396 B CN110243396 B CN 110243396B CN 201910549278 A CN201910549278 A CN 201910549278A CN 110243396 B CN110243396 B CN 110243396B
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/24—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
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- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
Abstract
The invention discloses a dual-mode sensing unit and a dual-mode sensor, wherein the dual-mode sensing unit comprises a shielding layer, a pressure-sensitive conductive layer, a capacitance sensing layer and a flexible protruding layer; the shielding layer is fixedly connected with the pressure-sensitive conductive layer and is grounded; the pressure sensitive conductive layer comprises a conductive electrode and a piezoresistance sensitive layer; the piezoresistance sensitive layer is provided with a convex microstructure; the capacitance sensing layer comprises a first flexible substrate, a transmitting electrode and a receiving electrode; the transmitting electrode and the receiving electrode are fixed on the bottom surface of the first flexible substrate, are arranged in a layered manner up and down, and are connected with the protruding microstructure in a conducting manner; the flexible convex layer is fixedly connected with the first flexible substrate, and the upper end face of the flexible convex layer is provided with a stress collecting protrusion. The dual-mode sensing unit has the functions of proximity sense and touch sense; the dual-mode sensor is formed by arranging a plurality of dual-mode sensing units in a matrix mode, and the dual-mode sensor is connected with each other through a flexible substrate, so that the dual-mode sensor has good flexibility, and the internal circuit is concise.
Description
Technical Field
The invention belongs to the technical field of robot sensing, and particularly relates to a dual-mode sensing unit and a dual-mode sensor.
Background
The existing cooperative robot sensing system basically comprises visual and tactile sensors, the tactile sensing system mainly provides stress and distribution information thereof under the condition of contact, and the visual sensing system mainly provides azimuth capturing and object distance information. However, in one aspect, additional 3D camera devices are required, which not only increases the cost, but also requires higher processing data bandwidth and vision algorithms; on the other hand, in some application scenes, the situation that the object distance is smaller exists, at this moment, the visual sensor is easy to be shielded by the mechanical arm, the distance information cannot be effectively captured, and meanwhile, the mechanical arm still does not contact the object, and the touch sensor cannot normally acquire the object information, so that the touch sensor is a blind area of a sensing system. Therefore, the robot electronic skin has vision and touch capabilities and also needs an auxiliary function of proximity sensing so as to truly realize a safe man-machine interaction task.
The Hyung-Kew Lee of korea university describes a capacitive proximity and tactile sensor array in 2009, which adopts interdigital electrodes distributed at upper and lower layers, and realizes coplanar capacitive proximity sensing and cross plate capacitive tactile sensing of upper and lower structures by connecting different detection electrodes, wherein the switching of the two modes is realized by a complex control circuit, the upper and lower cross electrode structures lead to complex leads and circuits, the flexibility of the whole sensor is affected, parasitic capacitance is caused, a measurement signal is caused to drift, and in addition, a dielectric layer of the plate capacitor is air, so that the problems of small range of pressure signals, low sensitivity and the like are caused.
Korean Jong-Hyun Ahn et al (Kang, kim et al 2017) invented a graphene-based 3D touch sensor that senses the distance of a human body and the general outline of a contact object through capacitance, and that can be directly mounted at a deformable location with a certain stretchability. However, in the contact mode, there are problems such as low sensitivity and narrow detection range.
Therefore, a new technology is needed to solve the problems of complex circuit, low measurement precision, low sensitivity and narrow detection range of proximity sense and touch sense in the prior art.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a dual-mode sensing unit and a dual-mode sensor, which have simple circuits, high measurement accuracy, wide detection range and high sensitivity.
The invention adopts the following technical scheme:
the dual-mode sensing unit comprises a shielding layer, a pressure-sensitive conductive layer, a capacitance sensing layer and a flexible protruding layer which are sequentially stacked from bottom to top;
the upper surface of the shielding layer is fixedly connected with the pressure-sensitive conductive layer, and the shielding layer is grounded;
the pressure-sensitive conductive layer comprises a conductive electrode and a piezoresistive sensitive layer connected with the conductive electrode in a conductive manner; the piezoresistance sensitive layer is made of a pressure sensitive conductive material, and the upper surface of the piezoresistance sensitive layer is provided with a plurality of convex microstructures distributed in a matrix;
The capacitance sensing layer comprises a first flexible substrate, a transmitting electrode and a receiving electrode; the transmitting electrode and the receiving electrode are fixed on the bottom surface of the first flexible substrate, the transmitting electrode and the receiving electrode are arranged up and down in a layered mode, and the transmitting electrode is connected with the upper end surface of the protruding microstructure in a conducting mode;
the flexible bulge layer is fixedly connected with the upper surface of the first flexible substrate, and stress collecting bulges are arranged on the upper end face of the flexible bulge layer at positions corresponding to the piezoresistance sensitive layer.
As a further improvement of the technical scheme of the invention, the conductive electrode comprises a first electrode main body and a first connecting pin extending from the first electrode main body; a second flexible substrate is arranged between the pressure-sensitive conductive layer and the shielding layer; the conducting electrode is fixed at the bottom of the piezoresistive sensitive layer, and the conducting electrode is embedded in the second flexible substrate.
As a further improvement of the technical scheme of the invention, the conductive electrode comprises a second electrode main body in a frame shape and a second connecting pin connected with the second electrode main body; the conducting electrode is annularly arranged on the periphery of the piezoresistance sensitive layer and is connected with the piezoresistance sensitive layer in a conducting way.
As a further improvement of the technical scheme of the invention, the transmitting electrode comprises a third electrode main body and a third connecting pin connected with the third electrode main body, and the position of the third electrode main body corresponds to the position of the first electrode main body; the receiving electrode comprises a fourth electrode main body in a frame shape and a fourth connecting pin connected with the fourth electrode main body; the fourth electrode main body is arranged above the third electrode main body in a surrounding mode, and the third connecting pin and the fourth connecting pin are perpendicular to each other.
As a further improvement of the technical scheme of the invention, the fourth electrode main body and the piezoresistance sensitive layer are packaged by insulating silica gel, the thickness of the insulating silica gel is equal to the height of the raised microstructure, and the width of the insulating silica gel is equal to the width of the frame-shaped fourth electrode main body.
As a further improvement of the technical scheme of the invention, the shape of the convex microstructure is conical, truncated conical or hemispherical.
As a further improvement of the technical scheme of the invention, the taper of the cone/truncated cone is 30-90 degrees.
As a further improvement of the technical scheme of the invention, the piezoresistive sensitive layer and the raised microstructure are integrally formed.
As a further improvement of the technical scheme of the invention, the section of the stress collecting protrusion is trapezoid.
The dual-mode sensor comprises a plurality of dual-mode sensing units based on the dual-mode sensing units, wherein each dual-mode sensing unit is arranged in a matrix, and a first flexible substrate and a second flexible substrate of each dual-mode sensing unit are respectively and correspondingly connected; the transmitting electrodes of the dual-mode sensing units are connected with each other in a string along a first direction, and the receiving electrodes of the dual-mode sensing units are connected with each other in a string along a second direction, wherein the first direction and the second direction are perpendicular to each other.
Compared with the prior art, the invention has the beneficial effects that:
1. In the dual-mode sensing unit, the transmitting electrode and the receiving electrode of the capacitance sensing layer form a coplanar capacitance, so that the proximity sensing function can be realized; the pressure-sensitive conductive layer is provided with a piezoresistance sensitive layer which is made of a piezoresistance material and has the function of touch sensing, and the piezoresistance sensitive layer is provided with a convex microstructure, so that the contact stress can be collected, and the sensitivity and the measurement range of the touch pressure are enhanced; through the capacitance sensing layer and the piezoresistance sensing layer, the touch sensing device has the functions of proximity sense and touch sense; in addition, the capacitance sensing layer and the piezoresistance sensing layer share a conductive electrode, so that the complexity of a circuit is simplified; the vertical arrangement of the shielding layer, the pressure-sensitive conductive layer and the capacitance sensing layer can increase the spatial resolution.
2. In the dual-mode sensor, the plurality of dual-mode sensing units distributed in the matrix are adopted, the transmitting electrodes of the dual-mode sensing units are connected with each other to form a string along the first direction, the receiving electrodes of the dual-mode sensing units are connected with each other to form a string along the second direction, and the array can be conveniently realized through the FPCB flexible printing technology.
Drawings
The technology of the present invention will be described in further detail below with reference to the attached drawings and detailed description:
FIG. 1 is a cross-sectional view of a piezoresistive sensitive layer;
FIG. 2 is a top view of a piezoresistive sensitive layer;
FIG. 3 is a cross-sectional view of a dual mode sensing unit with a circular or square first electrode body;
FIG. 4 is a top view of the first electrode body in a square shape;
FIG. 5 is a plan view of the first electrode body when it is circular;
FIG. 6 is a cross-sectional view of a dual mode sensing unit with a second electrode body that is circular or square;
FIG. 7 is a top view of the second electrode body in the form of a circular ring;
FIG. 8 is a top view of the second electrode body in a square shape;
FIG. 9 is a plan view of the third electrode body in a circular shape and the fourth electrode body in a circular ring shape;
FIG. 10 is a top view of the third electrode body in square shape and the fourth electrode body in square;
FIG. 11 is a schematic diagram of a dual mode sensor in which the transmit and receive electrodes are arranged in a matrix;
FIG. 12 is another schematic diagram of a dual mode sensor in which the transmitting and receiving electrodes are arranged in a matrix;
FIG. 13 is a line graph of capacitance change of a capacitive sensing layer with proximity distance to an object;
FIG. 14 is a line graph of the relative resistance change with pressure with and without a raised microstructure.
Reference numerals:
1-a piezoresistive sensitive layer; 11-raised microstructures;
2-a shielding layer;
3-a pressure sensitive conductive layer; 31-conductive electrodes; 311-a first electrode body; 312-first connection pins; 313-a second electrode body; 314-second connection pins; 32-a second flexible substrate; 33-insulating silica gel;
4-a capacitance sensing layer; 41-a first flexible substrate; 42-an emitter electrode; 421-a third electrode body; 422-third connection pins; 43-receiving electrode; 431-fourth electrode body; 432-fourth connection pins;
5-a flexible bump layer; 51-stress collecting bump.
Detailed Description
The conception, specific structure, and technical effects produced by the present invention will be clearly and completely described below with reference to the embodiments and the drawings to fully understand the objects, aspects, and effects of the present invention. It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other. The same reference numbers will be used throughout the drawings to refer to the same or like parts.
It should be noted that, unless otherwise specified, when a feature is referred to as being "fixed" or "connected" to another feature, it may be directly or indirectly fixed or connected to the other feature. Further, the descriptions of the upper, lower, left, right, etc. used in the present invention are merely with respect to the mutual positional relationship of the constituent elements of the present invention in the drawings.
Referring to fig. 1 to 14, the present invention provides a dual mode sensing unit and a dual mode sensor.
The dual-mode sensing unit comprises a shielding layer 2, a pressure-sensitive conductive layer 3, a capacitance sensing layer 4 and a flexible protruding layer 5 which are sequentially stacked from bottom to top.
As shown in fig. 4 and 7, the upper surface of the shielding layer 2 is fixedly connected with the conductive pressure-sensitive conductive layer 3, and the shielding layer 2 is grounded. Wherein, the shielding layer 2 adopts square copper foil with the thickness of 50-100 μm, and mainly reduces the formation of parasitic capacitance.
The pressure sensitive conductive layer 3 comprises a conductive electrode 31 and the piezoresistive sensitive layer 1, as shown in fig. 1to 8.
The piezoresistive sensitive layer 1, as shown in fig. 1 and 2, is prepared by integrally molding a pressure sensitive conductive material, the upper surface of the piezoresistive sensitive layer is provided with a plurality of convex microstructures 11 distributed in a matrix, the convex microstructures 11 are distributed on the piezoresistive sensitive layer 1 in a matrix, preferably 3*3, that is, 9 convex microstructures 11 are distributed and are arranged in a rectangle, and each side of the rectangle is provided with 3 convex microstructures 11. When the contact pressure changes, the resistance changes, and the touch sensor can be manufactured. And the provision of the raised microstructure 11 improves its sensitivity to pressure variations.
Wherein the shape of the raised microstructure 11 is conical, truncated conical or hemispherical, preferably conical, which is more sensitive to variations in contact pressure. Wherein the taper of the taper/truncated taper is 30 ° to 90 °, and may be selected to be 45 °, 60 °, or 75 °. The relative resistance change with pressure for the raised microstructure (microstructure) and without the raised microstructure (microstructure) is shown in fig. 14, where the resistance is seen to be very sensitive to pressure. The piezoresistive sensitive layer 1 is electrically connected to the conductive electrode 31, and a second flexible substrate 32 is arranged between the conductive electrode 31 and the shielding layer 2. The conductive electrode 31 is used to transmit a signal of the resistance change of the piezoresistive sensitive layer 1 with respect to the contact pressure.
The conductive electrode 31 has two arrangements, and both arrangements can realize the transmission of the piezoresistive electrical signal of the conductive electrode 31 to the piezoresistive sensitive layer 1.
One of the arrangements is shown in fig. 3 to 5, the conductive electrode 31 includes a first electrode body 311 having a circular/square shape and a first connection pin 312 extending from the first electrode body 311; the conductive electrode 31 is fixed to the bottom of the piezoresistive sensitive layer 1, the conductive electrode 31 being embedded in the second flexible substrate 32. In this way, the conductive electrode 31 is disposed below the piezoresistive sensitive layer 1 and in electrical communication with the piezoresistive sensitive layer 1.
As shown in fig. 6 to 8, another arrangement of the conductive electrode 31 is shown, wherein the conductive electrode 31 includes a second electrode body 313 having a circular ring/square frame shape and a second connection pin 314 connected to the second electrode body 313; the conductive electrode 31 is disposed around the outer circumference of the piezoresistive sensitive layer 1 and connected to the piezoresistive sensitive layer 1. In this way, the conductive electrode 31 is disposed at the periphery of the piezoresistive sensitive layer 1 in communication with the piezoresistive sensitive layer 1.
In order to further enhance the conductive connection between the conductive electrode 31 and the piezoresistive sensitive layer 1, the conductive electrode 31 and the piezoresistive sensitive layer 1 are bonded and fixed by using SPI 05001-AB conductive silver paste so as to transmit piezoresistive electrical signals to the maximum extent.
Wherein, as shown in fig. 3, 6, 9 and 10, the capacitance sensing layer 4 includes a first flexible substrate 41, a transmitting electrode 42 and a receiving electrode 43; the transmitting electrode 42 and the receiving electrode 43 are fixed on the bottom surface of the first flexible substrate 41, and the transmitting electrode 42 and the receiving electrode 43 are layered up and down, i.e. they are not on the same horizontal plane, but are staggered up and down, but because the thicknesses of the transmitting electrode 42 and the receiving electrode 43 are very thin, the transmitting electrode 42 and the receiving electrode 43 are almost on the same plane, and a group of coplanar capacitors are formed. The emitter electrode 42 is connected to the upper end surface of the protruding microstructure 11 in a conductive manner.
The transmitting electrode 42 and the receiving electrode 43 of the capacitance sensing layer 4 form a coplanar capacitance, which can realize the proximity function. The transmitting electrode 42 is fixedly connected with the upper end face of the raised microstructure 11, and the transmitting electrode 42 is communicated with the bottom conducting electrode 31 through the piezoresistive sensitive layer 1, namely the capacitive sensing layer 4 and the piezoresistive sensitive layer 1 share the conducting electrode 31, so that the complexity of a circuit is simplified.
Wherein the emitter electrode 42 includes a third electrode body 421 having a circular/square shape and a third connection pin 422 connected to the third electrode body 421, and a position of the third electrode body 421 corresponds to a position of the first electrode body 311.
The receiving electrode 43 includes a fourth electrode body 431 having a circular/square frame shape and a fourth connection pin 432 connected to the fourth electrode body 431.
The fourth electrode body 431 is disposed above the third electrode body 421 in a surrounding manner, and the third connection pin 422 and the fourth connection pin 432 are perpendicular to each other; the fourth electrode body 431 and the piezoresistive sensitive layer 3 are encapsulated by using an insulating silica gel 33, the thickness of the insulating silica gel 33 is equal to the height of the raised microstructure 11, and the width of the insulating silica gel 33 is equal to the width of the circular ring/positive square frame of the fourth electrode body 431.
In the practical option, the shape of the transmitting electrode 42 and the receiving electrode 43 is selected to be adapted, i.e. when the third electrode body 421 is circular, the fourth electrode body 431 is selected to be circular; when the third electrode body 421 is square, the fourth electrode body 431 is selected as a positive square.
The capacitance change of the capacitive sensing layer with proximity to the object is shown in fig. 13.
The flexible bump layer 5, as shown in fig. 3 and 6, is provided with a stress collecting bump 51 at a position of the upper end surface of the flexible bump layer 5 corresponding to the pressure sensitive layer 1, and the cross section of the stress collecting bump 51 is trapezoidal. The stress collecting protrusions 51 of the flexible protrusion layer 5 can concentrate the pressure contacted with the stress collecting protrusions and transmit the pressure to the piezoresistive sensitive layer 1 through the capacitance sensing layer 4, and the stress collecting protrusions are matched with the protruding portions of the piezoresistive sensitive layer 1, so that the sensitivity and the measuring range of the dual-mode sensing unit to the pressure are greatly improved. The flexible bump layer 5 is one of PDMS material, ecoflex material, SEBS material or TPU material, preferably PDMS. The flexible bump layer 5 not only can conduct concentrated pressure, but also can insulate and protect the capacitance sensing layer 4.
Based on the structure, the dual-mode sensing unit has the proximity sense and touch sense sensing functions, the two modes can work simultaneously, the sensitivity is high, and the wiring mode is very concise.
The invention also provides a dual-mode sensor, based on the dual-mode sensing units, the dual-mode sensing units are provided with a plurality of dual-mode sensing units which are arranged in a matrix, and the first flexible substrates 41 and the second flexible substrates 32 of each dual-mode sensing unit are respectively and correspondingly connected, namely the first flexible substrates 41 of two adjacent dual-mode sensing units are connected with each other; i.e. the second flexible substrates 32 of two adjacent dual mode sensor units are connected to each other. The flexibility of the whole dual-mode sensor is realized through the two layers of flexible substrates. Specifically, the first flexible substrate 41 and the second flexible substrate 32 are FPCBs, and are made of transparent polyimide (CPI) or polyethylene terephthalate (PET), and have a thickness of 50 to 100 μm, preferably CPI, and a thickness of 50 μm.
The transmitting electrodes 42 of the dual mode sensing cells are connected to each other in a string in a first direction, and the receiving electrodes 43 of the dual mode sensing cells are connected to each other in a string in a second direction, the first direction and the second direction being perpendicular to each other, as shown in fig. 12 and 13. In the dual-mode sensor, the dual-mode sensing units are distributed in a matrix, the transmitting electrodes 42 of the dual-mode sensing units are connected in series along the first direction, the receiving electrodes 43 of the dual-mode sensing units are connected in series along the second direction, the array can be conveniently realized through the FPCB flexible printing technology, and the manufacturing process requirement is low.
The dual-mode sensing unit and other contents of the dual-mode sensor according to the present invention are referred to in the prior art, and will not be described herein.
The present invention is not limited to the preferred embodiments, and any modifications, equivalent variations and modifications made to the above embodiments according to the technical principles of the present invention are within the scope of the technical proposal of the present invention.
Claims (7)
1. The dual-mode sensing unit is characterized in that: the capacitive touch screen comprises a shielding layer, a pressure-sensitive conductive layer, a capacitance sensing layer and a flexible protruding layer which are sequentially laminated from bottom to top;
the upper surface of the shielding layer is fixedly connected with the pressure-sensitive conductive layer, and the shielding layer is grounded;
The pressure-sensitive conductive layer comprises a conductive electrode and a piezoresistive sensitive layer connected with the conductive electrode in a conductive manner; the piezoresistance sensitive layer is made of a pressure sensitive conductive material, and the upper surface of the piezoresistance sensitive layer is provided with a plurality of convex microstructures distributed in a matrix;
The capacitance sensing layer comprises a first flexible substrate, a transmitting electrode and a receiving electrode; the transmitting electrode and the receiving electrode are fixed on the bottom surface of the first flexible substrate, the transmitting electrode and the receiving electrode are arranged up and down in a layered mode, and the transmitting electrode is connected with the upper end surface of the protruding microstructure in a conducting mode;
The flexible bulge layer is fixedly connected with the upper surface of the first flexible substrate, and stress collecting bulges are arranged on the upper end surface of the flexible bulge layer at positions corresponding to the piezoresistance sensitive layer; the conductive electrode includes a first electrode body and a first connection pin extending from the first electrode body; a second flexible substrate is arranged between the pressure-sensitive conductive layer and the shielding layer; the conducting electrode is fixed at the bottom of the piezoresistive sensitive layer, and is embedded in the second flexible substrate;
The conductive electrode comprises a second electrode main body in a frame shape and a second connecting pin connected with the second electrode main body; the conducting electrode is annularly arranged on the periphery of the piezoresistance sensitive layer and is connected with the piezoresistance sensitive layer in a conducting way;
the transmitting electrode comprises a third electrode main body and a third connecting pin connected with the third electrode main body, and the position of the third electrode main body corresponds to the position of the first electrode main body; the receiving electrode comprises a fourth electrode main body in a frame shape and a fourth connecting pin connected with the fourth electrode main body; the fourth electrode main body is arranged above the third electrode main body in a surrounding mode, and the third connecting pin and the fourth connecting pin are perpendicular to each other.
2. The dual mode sensing unit of claim 1, wherein: the fourth electrode main body and the piezoresistance sensitive layer are packaged by insulating silica gel, the thickness of the insulating silica gel is equal to the height of the raised microstructure, and the width of the insulating silica gel is equal to the frame-shaped width of the fourth electrode main body.
3. The dual mode sensing unit of claim 1, wherein: the shape of the convex microstructure is conical, truncated cone-shaped or hemispherical.
4. A dual mode sensing unit according to claim 3, wherein: the taper of the taper/truncated cone is 30-90 degrees.
5. The dual mode sensing unit of claim 1, wherein: the piezoresistive sensitive layer and the raised microstructure are integrally formed.
6. The dual mode sensing unit of claim 1, wherein: the cross section of the stress collecting protrusion is trapezoid.
7. Dual-mode sensor based on a dual-mode sensing unit according to any of claims 1 to 6, characterized in that: the sensor comprises a plurality of dual-mode sensing units, wherein each dual-mode sensing unit is arranged in a matrix, and a first flexible substrate and a second flexible substrate of each dual-mode sensing unit are respectively and correspondingly connected; the transmitting electrodes of the dual-mode sensing units are connected with each other in a string along a first direction, and the receiving electrodes of the dual-mode sensing units are connected with each other in a string along a second direction, wherein the first direction and the second direction are perpendicular to each other.
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| CN110806223B (en) * | 2020-01-08 | 2020-04-14 | 腾讯科技（深圳）有限公司 | Flexible sensing system, proximity sensing method and device, intelligent robot and equipment |
| CN111238545B (en) * | 2020-01-17 | 2021-10-12 | 腾讯科技（深圳）有限公司 | Sensor, intelligent device, sensing method and storage medium |
| CN111251326A (en) * | 2020-01-20 | 2020-06-09 | 腾讯科技（深圳）有限公司 | Proximity sensor, electronic skin, manufacturing method and proximity sensing method |
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