CN110240906A - Group III-V semiconductor etching liquid and its preparation method and application - Google Patents
Group III-V semiconductor etching liquid and its preparation method and application Download PDFInfo
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- CN110240906A CN110240906A CN201810188771.6A CN201810188771A CN110240906A CN 110240906 A CN110240906 A CN 110240906A CN 201810188771 A CN201810188771 A CN 201810188771A CN 110240906 A CN110240906 A CN 110240906A
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- 238000005530 etching Methods 0.000 title claims abstract description 124
- 239000004065 semiconductor Substances 0.000 title claims abstract description 84
- 239000007788 liquid Substances 0.000 title claims abstract description 83
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 150000002148 esters Chemical class 0.000 claims abstract description 20
- 150000003839 salts Chemical class 0.000 claims abstract description 14
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims abstract description 12
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- OURRXQUGYQRVML-AREMUKBSSA-N [4-[(2s)-3-amino-1-(isoquinolin-6-ylamino)-1-oxopropan-2-yl]phenyl]methyl 2,4-dimethylbenzoate Chemical compound CC1=CC(C)=CC=C1C(=O)OCC1=CC=C([C@@H](CN)C(=O)NC=2C=C3C=CN=CC3=CC=2)C=C1 OURRXQUGYQRVML-AREMUKBSSA-N 0.000 claims abstract description 4
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 claims description 19
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 claims description 10
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 8
- 239000001103 potassium chloride Substances 0.000 claims description 5
- 235000011164 potassium chloride Nutrition 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 238000003672 processing method Methods 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 3
- -1 methyl ethyl Chemical group 0.000 claims description 3
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 claims description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 claims description 2
- 229910003002 lithium salt Inorganic materials 0.000 claims description 2
- 159000000002 lithium salts Chemical class 0.000 claims description 2
- 159000000003 magnesium salts Chemical class 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 5
- 239000002994 raw material Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 39
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 24
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 20
- 230000000694 effects Effects 0.000 description 12
- 235000019441 ethanol Nutrition 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 10
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 10
- 150000007522 mineralic acids Chemical class 0.000 description 10
- 239000003960 organic solvent Substances 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 9
- 229910001496 lithium tetrafluoroborate Inorganic materials 0.000 description 7
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910001629 magnesium chloride Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 238000012876 topography Methods 0.000 description 5
- 238000002604 ultrasonography Methods 0.000 description 5
- 229910052724 xenon Inorganic materials 0.000 description 5
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- 238000002242 deionisation method Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910019142 PO4 Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 235000006408 oxalic acid Nutrition 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
- 239000010452 phosphate Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 239000002608 ionic liquid Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- SIXOAUAWLZKQKX-UHFFFAOYSA-N carbonic acid;prop-1-ene Chemical compound CC=C.OC(O)=O SIXOAUAWLZKQKX-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002057 nanoflower Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
- H01L21/30635—Electrolytic etching of AIIIBV compounds
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Weting (AREA)
Abstract
The invention discloses a kind of Group III-V semiconductor etching liquids and its preparation method and application.The Group III-V semiconductor etching liquid includes the following component calculated according to percent by volume: the ester 15~30% of the double bond containing C=C, the ester 60~84.95% containing carbonyl, salt 0.05~10%.The preparation method of the Group III-V semiconductor etching liquid includes: at normal temperature to be uniformly mixed the ester of carbon-carbon double bonds, ester containing carbonyl in water-less environment with salt, obtains the Group III-V semiconductor etching liquid.Group III-V semiconductor etching liquid provided in an embodiment of the present invention, raw material is easy to get, preparation method is simple, the safe operation in etching process, it is environmental-friendly, and accurate etching to Group III-V semiconductor may be implemented, while obtaining different patterns, be conducive to scientific research and industrialized production.
Description
Technical field
The present invention relates to a kind of organic etching liquid of neutrality, in particular to a kind of Group III-V semiconductor etching liquid and its preparation
Methods and applications belong to semiconductor devices and technical field of chemistry.
Background technique
III-V group semi-conductor material is in opto-electronic device, and photoelectricity is integrated, ultrahigh speed microelectronic component and hyperfrequency microwave device
Important application is obtained on part and circuit.In addition, its important role also in industrial production and scientific research, has wide
Prospect.Group III-V semiconductor has excellent physicochemical characteristic, when giving full play to property and constructing specific structure, III-V
Group iii v compound semiconductor material carries out pattern change.In this background, the etching of III-V group semi-conductor material obtains important pass
Note.Common dry etching at present, and the plasma that dry etching uses also has damage to the surface that semiconductor does not etch and breaks
It is bad.And wet etching has excellent selectivity as a kind of lithographic method, etching terminates to stop etching, and will not damage
Lower layer of material and the surface not etched.However the etching liquid of wet etching generally has highly acid, strong basicity or strong corrosive,
Therefore it needs to find neutral, mild etching liquid, it is effective to etch III-V semiconductor chip.
The special constructions such as III-V group semi-conductor material nano grade pore, nano wire, nano flower and regular texture are being sensed, are being urged
Change also has important application.Gallium nitride etching is as important step in scientific research and industrial production.The selection of etching liquid is to influence etching
An important factor for effect.Due to GaN chemical stability with higher, highly acid is generallyd use at present, strong basicity class etching liquid,
However the class etching agent poor selectivity of strong acid and strong base, destroy the mono-crystalline structures of non-etching surface.Therefore the quarter of neutral rule is needed
Liquid is lost, it is effective to etch Group III-V semiconductor substrate.
Neutrality etching liquid mainly has salts solution and ionic liquid at present.More than 5V voltage, water exists salts solution
Electrolysis generates gas near electrode, influences etching effect.Ionic liquid preparation time is long and yield is relatively low, novel
The energy consumption of outfield intensifying preparation method is high, and highly energy-consuming is unfavorable for environmental-friendly.
Summary of the invention
The main purpose of the present invention is to provide a kind of Group III-V semiconductor etching liquid and its preparation method and application, with
Overcome the deficiencies in the prior art.
For realization aforementioned invention purpose, the technical solution adopted by the present invention includes:
The embodiment of the invention provides a kind of Group III-V semiconductor etching liquid, including according to percent by volume calculate as
Lower component: the ester 15~30% of carbon-carbon double bonds, the ester 60~84.95% containing carbonyl, salt 0.05~10%.
The embodiment of the invention also provides the preparation methods of the Group III-V semiconductor etching liquid, comprising: in room temperature
Under, the ester of carbon-carbon double bonds, ester containing carbonyl are uniformly mixed in water-less environment with salt, the Group III-V semiconductor is obtained and carves
Lose liquid.
The embodiment of the invention also provides the Group III-V semiconductor etching liquids in Group III-V semiconductor manufacture field
Application.
The embodiment of the invention also provides a kind of processing methods of Group III-V semiconductor comprising: so as to be processed
Group III-V semiconductor is as anode, and the Group III-V semiconductor etching liquid that the anode and cathode merging is described, and in sun
Pole and cathode apply voltage, realize the lithography to the Group III-V semiconductor.
Compared with prior art, the invention has the advantages that Group III-V semiconductor provided in an embodiment of the present invention etches
Liquid, raw material is easy to get, preparation method is simple, the safe operation in etching process, environmental-friendly, and may be implemented to iii-v
The accurate etching of semiconductor, while different patterns is obtained, be conducive to scientific research and industrialized production.
Detailed description of the invention
Fig. 1 is the organic etching formed in first embodiment of the invention using ethylene carbonate, dimethyl carbonate, magnesium chloride
Liquid is to the effect picture after Group III-V semiconductor substrate etching；
Fig. 2 is the organic etching liquid pair formed in second embodiment of the invention using ethylene carbonate and LiBF4
The effect picture of Group III-V semiconductor substrate etching；
Fig. 3 is the organic etching liquid pair formed in third embodiment of the invention using dimethyl carbonate and lithium hexafluoro phosphate
The effect picture of Group III-V semiconductor substrate etching；
Fig. 4 is using ethylene carbonate and organic etching liquid of potassium chloride formation in fourth embodiment of the invention to III-V
The effect picture of race's semiconductor chip etching；
Fig. 5 is organic to be formed in fifth embodiment of the invention using ethylene carbonate, methyl ethyl carbonate, LiBF4
The effect picture that etching liquid etches Group III-V semiconductor substrate.
Specific embodiment
In view of deficiency in the prior art, inventor is studied for a long period of time and is largely practiced, and is able to propose of the invention
Technical solution.The technical solution, its implementation process and principle etc. will be further explained as follows.
The embodiment of the invention provides a kind of Group III-V semiconductor etching liquid, including according to percent by volume calculate as
Lower component: the ester 15~30% of carbon-carbon double bonds, the ester 60~84.95% containing carbonyl, salt 0.05~10%.
Further, the Group III-V semiconductor etching liquid is anhydrous solution.
Preferably, the ester containing carbonyl includes methyl ethyl carbonate, dimethyl carbonate, any one in diethyl carbonate
Or two or more combinations, but not limited to this.
Preferably, the ester of the carbon-carbon double bonds include vinyl acetate, acrylic ester, ethylene carbonate, in propene carbonate
Any one or two or more combinations, but not limited to this.
Preferably, the salt includes lithium salts, magnesium salts, any one or two or more combinations in sylvite, but unlimited
In this.
The embodiment of the invention also provides the preparation methods of the Group III-V semiconductor etching liquid, comprising: in room temperature
Under, the ester of carbon-carbon double bonds, ester containing carbonyl are uniformly mixed in water-less environment with salt, the Group III-V semiconductor is obtained and carves
Lose liquid.
Further, the preparation method includes: in water-less environment, by the ester of carbon-carbon double bonds and containing the ester of carbonyl
It is uniformly mixed to form mixture, then salt is dissolved in the mixture, obtains the Group III-V semiconductor etching liquid.
The embodiment of the invention also provides the Group III-V semiconductor etching liquids in Group III-V semiconductor manufacture field
Application.
The embodiment of the invention also provides a kind of processing methods of Group III-V semiconductor comprising: so as to be processed
Group III-V semiconductor is as anode, and the Group III-V semiconductor etching liquid that the anode and cathode merging is described, and in sun
Pole and cathode apply voltage, realize the lithography to the Group III-V semiconductor.
Further, the voltage applied between the anode and the cathode is 0.5-50V.
To make the objectives, technical solutions, and advantages of the present invention clearer, below with reference to embodiment to the present invention into
Row is further described.It should be appreciated that described herein, the specific embodiments are only for explaining the present invention, is not used to limit
The range of entitlement requests of the present invention protection, various components involved in embodiment can pass through business way unless otherwise specified
Diameter is commercially available.
First embodiment
The Group III-V semiconductor etching liquid (hereinafter referred to as organic etching liquid) of the present embodiment includes according to volume percentage
The following component calculated: ethylene carbonate 15%, dimethyl carbonate 84.95%, magnesium chloride 0.05%.
Organic etching liquid the preparation method is as follows: by ethylene carbonate 15%, dimethyl carbonate under water-less environment
84.95% mixing, adds magnesium chloride 0.05% later and stirs evenly.
Group III-V semiconductor substrate (using GaAs substrate in the present embodiment) is taken, organic solvent and inorganic acid solution are used for
Precondition substrate surface removes various impurity；Wherein organic solvent includes ethyl alcohol and acetone, and inorganic acid solution is that dilute hydrochloric acid is molten
Liquid.Successively substrate is immersed in ethyl alcohol, acetone and dilute hydrochloric acid solution, respectively ultrasound 20 minutes, accelerates cleaning.By substrate go from
After sub- water rinses three times, N is used2It dries up spare.Constant 20V voltage etching is provided using DC power supply, semiconductor chip is as sun
Pole, while platinized platinum is as cathode.Under room temperature, dark condition, anode etching is carried out to substrate using above-mentioned organic etching liquid, and
Etching parameters are determined according to required etch topography, are impregnated 8 hours after etching using 1M oxalic acid solution, are then used and go
Ionized water is slowly rinsed well, and it is as shown in Figure 1 to observe etching effect.
Second embodiment
The Group III-V semiconductor etching liquid (hereinafter referred to as organic etching liquid) of the present embodiment includes according to volume percentage
The following component calculated: ethylene carbonate 99.95%, LiBF4 0.05%.
Organic etching liquid the preparation method is as follows: by ethylene carbonate 99.95% and tetrafluoro boron under water-less environment
Sour lithium 0.05% mixes, and stirs evenly.
Group III-V semiconductor substrate (using InP-base piece in the present embodiment) is taken, organic solvent and inorganic acid solution are for pre-
Substrate surface is handled, various impurity are removed；Wherein organic solvent includes ethyl alcohol and acetone, and inorganic acid solution is dilute hydrochloric acid solution.
Successively substrate is immersed in ethyl alcohol, acetone and dilute hydrochloric acid solution, respectively ultrasound 20 minutes, accelerates cleaning.By substrate deionization
After water rinses three times, N is used2It dries up spare.Etching light source is provided by xenon lamp, and DC power supply provides constant etching voltage, semiconductor
Substrate is as anode, while platinized platinum is as cathode.Under room temperature, illumination condition, substrate is carried out using above-mentioned organic etching liquid
Anode etching, and etching parameters are determined according to required etch topography, use 1M oxalic acid solution to impregnate 8 after etching small
When, it is then slowly rinsed well with deionized water, and it is as shown in Figure 2 to observe etching effect.
3rd embodiment
The Group III-V semiconductor etching liquid (hereinafter referred to as organic etching liquid) of the present embodiment includes according to volume percentage
The following component calculated: dimethyl carbonate 95%, lithium hexafluoro phosphate 5%.
Organic etching liquid the preparation method is as follows: by dimethyl carbonate 95% and lithium hexafluoro phosphate under water-less environment
5% mixing, stirs evenly.
Group III-V semiconductor substrate (using AlN substrate in the present embodiment) is taken, organic solvent and inorganic acid solution are for pre-
Substrate surface is handled, various impurity are removed；Wherein organic solvent includes ethyl alcohol and acetone, and inorganic acid solution is dilute hydrochloric acid solution.
Successively substrate is immersed in ethyl alcohol, acetone and dilute hydrochloric acid solution, respectively ultrasound 20 minutes, accelerates cleaning.By substrate deionization
After water rinses three times, N is used2It dries up spare.Etching light source is provided by xenon lamp, and DC power supply provides constant etching voltage, semiconductor
Substrate is as anode, while platinized platinum is as cathode.Under room temperature, illumination condition, substrate is carried out using above-mentioned organic etching liquid
Anode etching, and etching parameters are determined according to required etch topography, the AlN substrate after etching is then put into AgNO3, hydrogen
It in fluoric acid and hydrogen peroxide solution, is irradiated half an hour using xenon lamp, using 1M oxalic acid solution immersion 8 hours after etching, then
It is slowly rinsed well with deionized water, observation etching effect is as shown in Figure 3.
Fourth embodiment
The Group III-V semiconductor etching liquid (hereinafter referred to as organic etching liquid) of the present embodiment includes according to volume percentage
The following component calculated: ethylene carbonate .95%, potassium chloride 5%.
Organic etching liquid the preparation method is as follows: by ethylene carbonate .95% and potassium chloride 5% under water-less environment
Mixing, stirs evenly.
Group III-V semiconductor substrate (using GaP substrate in the present embodiment) is taken, organic solvent and inorganic acid solution are for pre-
Substrate surface is handled, various impurity are removed.Wherein organic solvent includes ethyl alcohol and acetone, and inorganic acid solution is dilute hydrochloric acid solution.
Successively substrate is immersed in ethyl alcohol, acetone and dilute hydrochloric acid solution, respectively ultrasound 20 minutes, accelerates cleaning；By substrate deionization
After water rinses three times, N is used2Dry up spare, etching light source is provided by xenon lamp, and DC power supply provides constant etching voltage, semiconductor
Substrate is as anode, while platinized platinum is as cathode；Under room temperature, dark condition, substrate is carried out using above-mentioned organic etching liquid
Anode etching, and etching parameters are determined according to required etch topography, the GaP substrate after etching is then put into AgNO3, hydrogen
It in fluoric acid and hydrogen peroxide solution, is irradiated half an hour using xenon lamp, is slowly rinsed well after etching with ethyl alcohol and deionized water,
It is as shown in Figure 4 to observe etching effect.
5th embodiment
The Group III-V semiconductor etching liquid (hereinafter referred to as organic etching liquid) of the present embodiment includes according to volume percentage
The following component calculated: ethylene carbonate 15%, methyl ethyl carbonate 75%, LiBF4 10%.
Organic etching liquid the preparation method is as follows: by ethylene carbonate 15% and methyl ethyl carbonate under water-less environment
75% is uniformly mixed, and adds LiBF4 10%, stirs evenly.
Group III-V semiconductor substrate (using GaN base piece in the present embodiment) is taken, organic solvent and inorganic acid solution are for pre-
Substrate surface is handled, various impurity are removed；Wherein organic solvent includes ethyl alcohol and acetone, and inorganic acid solution is dilute hydrochloric acid solution,
Successively substrate is immersed in ethyl alcohol, acetone and dilute hydrochloric acid solution, respectively ultrasound 20 minutes, accelerates cleaning；By substrate deionization
After water rinses three times, N is used2Dry up it is spare, semiconductor chip as anode, while platinized platinum be welded to as cathode it is semiconductor-based
Substrate is immersed in organic etching liquid under room temperature, dark condition and etches by piece, and is determined and carved according to required etch topography
Parameter is lost, is slowly rinsed well after etching with ethyl alcohol and deionized water, observation etching effect is as shown in Figure 5.
Reference examples 1: the Group III-V semiconductor etching liquid (hereinafter referred to as organic etching liquid) of this reference examples includes single organic
Component is calculated according to percent by volume: ethylene carbonate 100% or dimethyl carbonate 100%.
Reference examples 2: the Group III-V semiconductor etching liquid (hereinafter referred to as organic etching liquid) of this reference examples includes according to volume
The following component that percentage calculates: dimethyl carbonate 99.99%, magnesium chloride 0.01%.
Reference examples 3: the Group III-V semiconductor etching liquid (hereinafter referred to as organic etching liquid) of this reference examples includes according to volume
The following component that percentage calculates: ethylene carbonate 75%, magnesium chloride 25%.
Referring to the scheme of first embodiment, GaAs substrate is carried out with organic etching liquid of reference examples 1,2,3 and is performed etching, but
The results show that both etching liquids effectively can not be completed to etch to GaAs.
Reference examples 4: the Group III-V semiconductor etching liquid (hereinafter referred to as organic etching liquid) of this reference examples includes single organic
Component is calculated according to percent by volume: ethylene carbonate 100% or methyl ethyl carbonate 100%.
Reference examples 5: the Group III-V semiconductor etching liquid (hereinafter referred to as organic etching liquid) of this reference examples includes according to volume
The following component that percentage calculates: ethylene carbonate 90%, LiBF4 10%.
Reference examples 6: the Group III-V semiconductor etching liquid (hereinafter referred to as organic etching liquid) of this reference examples includes according to volume
The following component that percentage calculates: ethylene carbonate 90%, LiBF4 10%.
Referring to the scheme of the 5th embodiment, GaN base piece is carried out with organic etching liquid of reference examples 4,5,6 and is performed etching, but
The results show that both etching liquids effectively can not be completed to etch to GaN.
Group III-V semiconductor etching liquid provided in an embodiment of the present invention, raw material is easy to get, preparation method is simple, etched
Safe operation in journey, it is environmental-friendly, and the accurate etching to Group III-V semiconductor may be implemented, while obtaining different shapes
Looks are conducive to scientific research and industrialized production.
It should be appreciated that the technical concepts and features of above-described embodiment only to illustrate the invention, its object is to allow be familiar with this
The personage of item technology cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all
Equivalent change or modification made by Spirit Essence according to the present invention, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of Group III-V semiconductor etching liquid, it is characterised in that including the following component calculated according to percent by volume: containing C
The ester 15~30% of=C double bond, the ester 60~84.95% containing carbonyl, salt 0.05~10%.
2. Group III-V semiconductor etching liquid according to claim 1, it is characterised in that: the Group III-V semiconductor etching
Liquid is anhydrous solution.
3. Group III-V semiconductor etching liquid according to claim 1, it is characterised in that: the ester containing carbonyl includes carbon
Sour methyl ethyl ester, dimethyl carbonate, any one or two or more combinations in diethyl carbonate.
4. Group III-V semiconductor etching liquid according to claim 1, it is characterised in that: the ester packet of the double bond containing C=C
Include vinyl acetate, acrylic ester, any one or two or more combinations in ethylene carbonate.
5. Group III-V semiconductor etching liquid according to claim 1, it is characterised in that: the salt includes lithium salts, magnesium salts
With any one or the two or more combinations in sylvite.
6. the preparation method of Group III-V semiconductor etching liquid according to any one of claims 1 to 5, it is characterised in that packet
It includes: at normal temperature, the ester of carbon-carbon double bonds, ester containing carbonyl being uniformly mixed in water-less environment with salt, obtain the iii-v
Semiconductor etching liquid.
7. preparation method according to claim 6, characterized by comprising: in water-less environment, by carbon-carbon double bonds
Ester and the ester containing carbonyl are uniformly mixed to form mixture, then salt is dissolved in the mixture, obtain the iii-v and partly lead
Body etching liquid.
8. Group III-V semiconductor etching liquid according to any one of claims 1 to 5 is in Group III-V semiconductor manufacture field
Using.
9. a kind of processing method of Group III-V semiconductor, characterized by comprising: so that Group III-V semiconductor to be processed is made
For anode, and the anode and cathode are placed in Group III-V semiconductor etching liquid of any of claims 1-5, and
Apply voltage in anode and cathode, realizes the lithography to the Group III-V semiconductor.
10. processing method as claimed in claim 9, it is characterised in that: the voltage applied between the anode and the cathode is 0.5-
50V。
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Application publication date: 20190917 |