CN207529904U - Plasma generator electrode - Google Patents
Plasma generator electrode Download PDFInfo
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- CN207529904U CN207529904U CN201721686240.7U CN201721686240U CN207529904U CN 207529904 U CN207529904 U CN 207529904U CN 201721686240 U CN201721686240 U CN 201721686240U CN 207529904 U CN207529904 U CN 207529904U
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- plasma generator
- column structure
- generator electrode
- acicular texture
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Abstract
The utility model discloses a kind of plasma generator electrode, which includes substrate, the column structure array being formed in substrate and acicular texture array, and acicular texture array is formed in the substrate outside column structure array and the bottom of column structure array.The structure takes full advantage of the cooperation of column structure and acicular texture across scale, and acicular texture gathers internal field and promotes direct conversion of the gas to plasmoid in point effect geometrically；And the side wall of column structure contains a large amount of surface state, can further promote the proliferation in the diffusion of plasma in space and maintenance, can realize and large range of high-density plasma distribution is expeditiously formed under conditions of low voltage driving.
Description
Technical field
The utility model is related to plasma technology field more particularly to a kind of plasma generator electrodes.
Background technology
Plasma is a kind of existing forms of substance, containing the particle largely with positive and negative charge and with higher object
Reason, chemism are therefore widely used in the fields such as film generation, structure etching, surface treatment, pernicious gas decomposition.Respectively
Kind plasma application is all the transfer of energy in essence, in order to improve the application efficiency of plasma, is needed similary
Drive condition under improve plasma generator generate electrons/ions density.Traditional plasma occurring mode includes
High-energy rays such as X ray, heating excitation, laser etc., the guarantee of safety have more highly difficult.Comparatively safety and stability
Mode is that the gas discharge under high-strength electric field generates plasma, and secure context difficulty is concentrated mainly on high voltage drive, mechanism
Aspect main problem is under normal barometric pressure that the controllability of gas discharge and efficiency are low, and application aspect main problem is production of discharging
Raw plasma is unevenly distributed, and easily generates fluidization tower consumption energy, it is difficult to which the space outside generator maintains enough bands
Charged particle density.
In order to solve the above-mentioned technical problem, targetedly scheme is suggested.For example, for high voltage, smaller electricity is utilized
Interpolar under certain voltage conditions away from can obtain higher electric field strength or reduce institute under the conditions of certain electric field strength
The voltage that need to be loaded, but correspondingly, reduce the collision probability of charged particle in space and discharge on the whole so as to inhibit
It generates the efficiency of plasma or reduces the distributed area of plasma so as to restrict its application range；Reduce electric discharge
Air pressure not only needs complicated vacuum system, while constrains application range；It reduces and electric discharge and fluidization tower generation is concentrated to introduce Jie
Matter barrier discharge, normally only forms Current filament between parallel pole, is unable to reach the charged particle distribution of larger space range,
The relevant technologies problem for focusing on required pulse excitation or high-frequency and high-voltage power supply of direction research at present.
Utility model content
The utility model proposes a kind of plasma generator electrode, with high efficiency under conditions of being driven in low voltage
Ground forms large range of high-density plasma distribution.
To solve the above-mentioned problems, the utility model provides a kind of plasma generator electrode, including：
Substrate；
Column structure array, is formed on the substrate, and the column structure array includes several column structures；
Acicular texture array, is formed in the substrate outside several column structures and several column structures
Bottom, the acicular texture array include several acicular textures.
Wherein, the height of the acicular texture is far below the height of the column structure.
In one embodiment of the utility model, it is also formed on the top of several column structures and/or side wall
Acicular texture.
In one embodiment of the utility model, top and the metallic particles of the acicular texture form heterogeneous junction
Structure.
In one embodiment of the utility model, the draw ratio of single column structure is not less than 2, highly not less than 100
Micron.
In one embodiment of the utility model, the spacing in the column structure array between adjacent columnar structures is not
Less than the diameter of the column structure.
In one embodiment of the utility model, for the draw ratio of single acicular texture not less than 10, diameter is not more than 10
Micron.
In one embodiment of the utility model, the column structure array is formed by the substrate by etching.
In one embodiment of the utility model, the etching is using patterned catalyst film as catalyst.
In one embodiment of the utility model, the patterned catalyst film includes lower film, under described
Layer film is contacted with substrate, and the material of the lower film is noble metal, for being catalyzed the etching of the substrate.
In one embodiment of the utility model, the patterned catalyst film further includes topmost thin film, described
Topmost thin film is located on the lower film, and the material of the topmost thin film is iron, gold, silver, titanium, palladium, nickel, gallium, zinc and its conjunction
Any one of gold and/or oxide or its combination, for being catalyzed the growth of the acicular texture.
In one embodiment of the utility model, the substrate is silicon chip.
The utility model due to using the technology described above, be allowed to compared with prior art, there are it is following the advantages of and product
Pole effect：
1) plasma generator electrode provided by the utility model takes full advantage of column structure and acicular texture across ruler
(i.e. the structure top end of high length-diameter ratio can generate local enhancement electricity in point effect geometrically for the cooperation of degree, wherein acicular texture
), gather internal field and promote direct conversion of the gas to plasmoid；And the side wall of column structure contains a large amount of table
Face state can further promote the proliferation in the diffusion of plasma in space and maintenance, so as to realize in low voltage
Large range of high-density plasma distribution is expeditiously formed under conditions of driving.
2) acicular texture is distributed in addition to bottom in the column structure of plasma generator electrode provided by the utility model
In addition, acicular texture can be also formed on the top of column structure and/or side wall, possessed point effect and surface state effect are same
Sample can form large range of high-density plasma distribution at lower drive voltage.
3) plasma generator electrode provided by the utility model, top and the metallic particles of acicular texture are formed with
The heterojunction structure of metallic particles-acicular texture, the heterojunction structure can provide more surface state so that gas molecule is electric
During plasma is formed, electronics has bigger probability to be detached from neutral gas molecule so as to further promote plasma
Generation efficiency.
Description of the drawings
Fig. 1 is the schematic front view for the plasma generator electrode that the utility model embodiment provides；
Fig. 2 is the flow signal of the manufacturing method for the plasma generator electrode that one embodiment of the utility model provides
Figure；
Fig. 3 A- Fig. 3 C are each steps of the manufacturing method for the plasma generator electrode that one embodiment of the utility model provides
Rapid corresponding device architecture schematic diagram.
In figure：1- substrates, 2- column structures, 3- acicular textures, 4- catalyst films.
Specific embodiment
Below in conjunction with the drawings and specific embodiments to the utility model proposes plasma generator electrode make it is further
It is described in detail.According to following explanation and claims, will be become apparent from feature the advantages of the utility model.It should be noted that
Attached drawing using very simplified form and using non-accurate ratio, only to it is convenient, lucidly aid in illustrating this practicality
The purpose of new embodiment.
Before this utility model is proposed, the utility model people of the application is to possible plasma generator electricity at present
Pole has conducted a thorough research, and specific research is as follows：
1) electrode structure for the plasma generator reported in order to enhance internal field, is introduced directly into micron even
The acicular texture of nanoscale, although can have one by the formation efficiency of plasma while driving voltage threshold value needed for reduction
Fixed promotion, but sphere of action is extremely limited, relies only on the point effect at the top of acicular texture；Meanwhile applicant's progress
The experimental results showed that non-uniform electric discharge such as occurs, such as generate the fluidization tower of high-energy, high electron flux, tiny needle-shaped knot
Structure will be destroyed and be failed.
2) electrode structure for the plasma generator reported such as is introduced directly into the acicular texture of micro-nano-scale,
The surface state that acicular texture is provided is also used on microcosmic, required energy of a charge turns when having been demonstrated to promote more to ionize
It moves, but since only with acicular texture, effective range remains restricted to acicular texture surface, in plasma diffusion, drift
Space fail effectively to be maintained and promote.
3) applicant generates plasma by the research in terms of plasma mechanism of production and a large amount of gas discharge
Experiment, find diameter be combined in several microns to nanoscale of acicular texture with micro-meter scale column structure, can be effectively
Improve plasma generator electrode fine structure sphere of action is limited in generating plasma process the defects of so that wait from
The enhancing effect of daughter generation extends partially into the diffusion space that column structure formed from the tip of acicular texture.
Based on the studies above, the utility model people of the application creatively devises a kind of plasma generator electrode,
It please refers to Fig.1, as shown in Figure 1, the plasma generator electrode that the utility model embodiment provides includes substrate 1, in substrate 1
The column structure array of upper formation and acicular texture array；Wherein, column structure array includes several column structures 2；It is needle-shaped
Array of structures is specifically formed in the substrate outside several column structures and the bottom of several column structures, acicular texture array packet
Include several acicular textures 3.Plasma generator electrode provided by the utility model, takes full advantage of column structure and needle-shaped knot
Structure is across the cooperation of scale, and wherein in point effect geometrically, (i.e. the structure top end of high length-diameter ratio can generate part to acicular texture
Enhance electric field), gather internal field and promote direct conversion of the gas to plasmoid；And the side wall of column structure contains greatly
The surface state of amount can further promote the proliferation in the diffusion of plasma in space and maintenance, so as to realize compared with
Large range of high-density plasma distribution is expeditiously formed under conditions of low voltage drive.
Wherein, the height of the acicular texture 3 is far below the height of the column structure 2, that is, on the whole,
Acicular texture 3 is located at bottom.
As a preferred embodiment, acicular texture is also formed on the top of several column structures 2 and/or side wall, so as to
The contact area and chance with plasma bigger are provided, structure plasma maintenance on the move and proliferation have actively
Facilitation.
As further preferred embodiment, top and the metallic particles of acicular texture 3 form heterojunction structure, so as to
The surface state effect provided by metallic particles in point effect is provided, further promotes plasma generation.
Wherein, 1 silicon chip of substrate, in order to ensure effective transmission of drive signal, the preferably relatively low height of resistivity leads silicon
Piece, wherein, height leads silicon chip and refers to silicon chip of the resistivity below tens ohm of centimetres of ranks.Certainly, the utility model is not
As limit, it is also an option that other materials are as substrate.Column structure array is formed by substrate by etching, single column
The draw ratio (breadth depth ratio) of structure 2 is not less than 2, highly not less than 100 microns.Preferably, adjacent column in column structure array
Spacing between structure 2 is not less than the diameter of the column structure 2, to ensure there is foot in plasma proliferation and motion process
The enough surface states of enough geometric effects and offer.Wherein, etching uses patterned catalyst film as catalyst.Specifically
Ground, patterned catalyst film include lower film, and the lower film is contacted with substrate 1, the material of the lower film
For noble metal, for being catalyzed the etching of the substrate, to form column structure.The patterned catalyst film further includes
Layer film, the topmost thin film are located on the lower film, the material of the topmost thin film is iron, gold, silver, titanium, palladium, nickel,
Gallium, zinc and its any one of alloy and/or oxide or its combination, for being catalyzed the growth of the acicular texture.
In one embodiment of the utility model, for the draw ratio of single acicular texture 3 not less than 10, diameter is not more than 10
Micron, to ensure point effect of the acicular texture 3 in plasma generation process.
The manufacturing method of above-mentioned plasma generator electrode, includes the following steps：
S1:One substrate is provided；
S2:Column structure array is formed on the substrate, and the column structure array includes several column structures；
S3:In the substrate outside several column structures and bottom of several column structures forms needle-shaped
Array of structures, the acicular texture array include several acicular textures.
In one embodiment of the utility model, in step s3, the acicular texture is also formed in the column knot
On the top of structure and/or side wall.
In one embodiment of the utility model, step S4 is further included：Metal is formed on the top of the acicular texture
The heterojunction structure of particle-acicular texture.
In one embodiment of the utility model, step S12 is further included between the step S1 and step S2：Described
Depositing catalytic agent film and the graphical catalyst film in substrate.
In one embodiment of the utility model, the step S2 is specially：It is being carved by patterned catalyst film
Catalysis etches the substrate and forms the column structure array in erosion liquid.
In one embodiment of the utility model, the step S3 is specially：With the patterned catalyst film
As catalyst, the growth of the acicular texture is catalyzed, forms acicular texture array.
In one embodiment of the utility model, the patterned catalyst film includes lower film, under described
Layer film is contacted with substrate, and the material of the lower film is noble metal, for being catalyzed the etching of the substrate.
In one embodiment of the utility model, the patterned catalyst film further includes topmost thin film, described
Topmost thin film is located on the lower film, and the material of the topmost thin film is iron, gold, silver, titanium, palladium, nickel, gallium, zinc and its conjunction
Any one of gold and/or oxide or its combination, for being catalyzed the growth of the acicular texture.
Specific embodiment is given below to illustrate the manufacturing method of the plasma generator electrode of the utility model.
Embodiment 1
It please refers to Fig.2 and Fig. 3 A- Fig. 3 C, with reference to Fig. 2 and Fig. 3 A- Fig. 3 C, plasma provided in this embodiment occurs
The manufacturing method of device electrode includes the following steps：
S101:One substrate 1 is provided
The substrate 1 is specially silicon chip, and the preferably relatively low height of resistivity leads silicon chip, to ensure effective biography of drive signal
It is defeated.
S102:Depositing catalytic agent film 4 and the graphical catalyst film on the base 1, the device after the completion of the step
Structure is as shown in Figure 3A.
Wherein, catalyst film 4 includes lower film and topmost thin film, and lower film is contacted with substrate 1, and material is expensive
Metal, for being catalyzed the etching of the substrate 1；The material of topmost thin film more than noble metal for iron, gold, silver, titanium, palladium, nickel,
Gallium, zinc and its any of or a combination of alloy and/or oxide, for being catalyzed the growth of the acicular texture 3.
The method that catalyst film 4 is deposited on 1 surface of substrate includes sputtering and colloidal sol coating, wherein sputtering is certain
Particle (ion or neutral atom, molecule) the bombardment surface of solids of energy, the atom or molecule for making solid near surface obtain enough
Big energy and finally escape the surface of solids and be moved to the work that Target Board (substrate 1 i.e. in the application) surface forms film
Skill；Colloidal sol coating refer to first by required catalyst material the particle of nanoscale be dispersed in liquid dispersant be made liquid it is molten
Glue, the technique that the lyosol is then attached to Target Board (substrate 1 i.e. in the application) surface formation film.
There are two types of modes for wherein catalyst film graphical：1) it is thin in the surface deposited catalyst of the substrate 1 first
Film, then using photoresist spin coating, photoetching, the development of the semiconducter process of standard on catalyst film, with reservation
Photoresist protects partially catalyzed agent film and exposes the figure that needs to remove catalyst film part, utilizes ion bombardment
(dry method), chemical attack (wet method) remove the catalyst film material for the part that is exposed, that is, form the upper table of the column structure 2
Face (top surface)；2) the photoresist spin coating of the semiconducter process of standard is utilized on the surface of the substrate 1 first, photoetching, is shown
Shadow, the upper surface figure of the column structure 2 is formd with the photoresist of reservation, and exposes the figure for needing etched portions,
Then catalyst film is deposited on patterned photoresist surface with aforementioned film depositing operation, wherein needing etched portions
Graph position catalyst film is directly contacted with the substrate 1, and 2 upper surface location of column structure is because there is photoresist to protect institute
Photoresist surface will be deposited on catalyst film, using acetone while the part photoresist is dissolved by catalyst thereon
Material is removed from 1 solution-off of substrate, that is, forms patterned catalyst film 4 as shown in Figure 2.
S103:The substrate 1 that surface deposition has graphical catalyst film 4 is put into etching liquid and carries out wet etching, shape
Into column structure array；Device architecture after the completion of the step is as shown in Figure 3B.
Wherein, in the substrate 1 in the case of silicon chip, etching liquid is that (molarity is for the hydrofluoric acid of standard
1.87mol/L) and hydrogen peroxide (molarity 8.94mol/L) mixed solution, reaction temperature are room temperature (18 DEG C), if you need to
Accelerate reaction process, hydrofluoric acid concentration can be increased and simultaneously improve reaction solution temperature to 50 DEG C for 2 times.Reaction time according to
Etching depth (i.e. the height of column structure 2) requirement, the complexity of figure, column structure 2 and the proportionate relationship of intercolumniation spacing
And set, it can be adjusted in specific implementation process according to measurement result.
For the column structure array is made to reach better regularity, it is preferable that in the catalyst film 4,
Magnetic material is added in above the layer of precious metal being in direct contact with the substrate 1, such as iron, cobalt, nickel, magnetic is then added in outside etching liquid
, make the contact interface of noble metal and 1 material of substrate that can further be promoted the column structure 2 by the pressure of certain orientation
Array in order between individual.
S104:Using the graphical catalyst film for remaining in substrate and column structure bottom as catalyst, grow needle-shaped
Structure forms acicular texture array；Device architecture after the completion of the step is as shown in Figure 3 C.
After etching, the patterned catalyst film 4 will be retained in the substrate 1 and the column structure 2
Bottom because during etching, metal material is not substantially consumed by, thus can with the etching process of silicon chip and with
Sink with silicon chip, still can finally retain on the surface of substrate 1 after etching and on the bottom of column structure 2.Graphically
Catalyst film 4 in the component that grows of the contained promotion acicular texture 3 catalytic action will be played under the conditions of corresponding.
Typical etch catalyst material --- the gold particle of silicon chip as the substrate 1, applicant demonstrate it as described needle-shaped
The catalysis characteristics that structure 3 is grown：Hydrogen is as environmental gas, and the ratio in arsenic source and gallium source is 14.2, air pressure 10mBar, reaction
Temperature is controlled under conditions of 430 DEG C, can grow 3 array of the acicular texture of GaAs nano whisker, length is 100
For nanometer between 500 nanometers, diameter is less than 10 nanometers.As a result it is also shown that partially catalyzed agent material gold particle is as described in being retained in
The sidewall surfaces of column structure 2 or upper surface, also the same GaAs nano whisker that can be catalyzed as the acicular texture 3
Growth course.
S105:The metallic particles for remaining in 3 top of acicular texture is combined with acicular texture 3, forms metallic particles-needle-shaped knot
The heterojunction structure of structure.
Catalyst material is if be constantly in the noble metal on 3 top of acicular texture, then in the growth technique of acicular texture
The top that stable noble metal granule will finally be saved in acicular texture 3 after the completion, the metallic particles-acicular texture formed
The heterojunction structure being composed can be superimposed the surface state effect provided by catalytic metal in point effect, further promote etc.
Gas ions generate.
Certainly, above-described embodiment is only a preferred embodiment of the utility model, and step S105 is as the utility model
Preferred steps, be optional, the step can also be omitted in other embodiments.
The manufacturing method of plasma generator electrode provided by the utility model, is dexterously etched using precious metal catalyst
Remaining in column structure bottom after substrate formation column structure, (bottom refers to the substrate of column structure bottom and column knot herein
The bottom structure of structure in itself), continue the catalyst grown as follow-up acicular texture, reached efficiently, save, be coherent across ruler
Spend micro Process effect.
Foregoing description is only the description to the utility model preferred embodiment, not to any limit of the scope of the utility model
Calmly, any change, the modification that the those of ordinary skill in the utility model field does according to the disclosure above content, belonging to right will
Seek the protection domain of book.
Claims (12)
1. a kind of plasma generator electrode, which is characterized in that including：
Substrate；
Column structure array, is formed on the substrate, and the column structure array includes several column structures；
Acicular texture array, is formed in the substrate outside several column structures and the bottom of several column structures
Portion, the acicular texture array include several acicular textures.
2. plasma generator electrode as described in claim 1, which is characterized in that the height of the acicular texture is far below
The height of the column structure.
3. plasma generator electrode as described in claim 1, which is characterized in that the top of several column structures
And/or acicular texture is also formed on side wall.
4. plasma generator electrode as described in any one of claims 1 to 3, which is characterized in that the acicular texture
Top forms heterojunction structure with metallic particles.
5. plasma generator electrode as described in any one of claims 1 to 3, which is characterized in that single column structure
Draw ratio is not less than 2, highly not less than 100 microns.
6. plasma generator electrode as claimed in claim 5, which is characterized in that adjacent pillars in the column structure array
Spacing between shape structure is not less than the diameter of the column structure.
7. plasma generator electrode as claimed in claim 5, which is characterized in that the draw ratio of single acicular texture is not small
In 10, diameter is not more than 10 microns.
8. plasma generator electrode as described in claim 1, which is characterized in that the column structure array is by the base
Bottom is formed by etching.
9. plasma generator electrode as claimed in claim 8, which is characterized in that the etching uses patterned catalysis
Agent film is as catalyst.
10. plasma generator electrode as claimed in claim 9, which is characterized in that the patterned catalyst film
Including lower film, the lower film is contacted with substrate, and the material of the lower film is noble metal, for being catalyzed the base
The etching at bottom.
11. plasma generator electrode as claimed in claim 10, which is characterized in that the patterned catalyst film
Further include topmost thin film, the topmost thin film is located on the lower film, the material of the topmost thin film is iron, gold, silver,
Titanium, palladium, nickel, gallium, zinc and its any one of alloy and/or oxide or its combination, for being catalyzed the life of the acicular texture
It is long.
12. plasma generator electrode as described in claim 1, which is characterized in that the substrate is silicon chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721686240.7U CN207529904U (en) | 2017-12-07 | 2017-12-07 | Plasma generator electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721686240.7U CN207529904U (en) | 2017-12-07 | 2017-12-07 | Plasma generator electrode |
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| Publication Number | Publication Date |
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| CN207529904U true CN207529904U (en) | 2018-06-22 |
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ID=62578191
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107845559A (en) * | 2017-12-07 | 2018-03-27 | 上海睿筑环境科技有限公司 | Plasma generator electrode and its manufacture method |
| CN108548864A (en) * | 2018-03-20 | 2018-09-18 | 上海交通大学 | Plasma gas sensor and its manufacturing method |
-
2017
- 2017-12-07 CN CN201721686240.7U patent/CN207529904U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107845559A (en) * | 2017-12-07 | 2018-03-27 | 上海睿筑环境科技有限公司 | Plasma generator electrode and its manufacture method |
| WO2019109966A1 (en) * | 2017-12-07 | 2019-06-13 | 上海睿筑环境科技有限公司 | Plasma generator electrode and manufacturing method thereof |
| CN108548864A (en) * | 2018-03-20 | 2018-09-18 | 上海交通大学 | Plasma gas sensor and its manufacturing method |
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