CN104119921A - Etching paste composition and application thereof - Google Patents
Etching paste composition and application thereof Download PDFInfo
- Publication number
- CN104119921A CN104119921A CN201410157734.0A CN201410157734A CN104119921A CN 104119921 A CN104119921 A CN 104119921A CN 201410157734 A CN201410157734 A CN 201410157734A CN 104119921 A CN104119921 A CN 104119921A
- Authority
- CN
- China
- Prior art keywords
- alcohol
- acid
- solvent
- etching paste
- weight parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 82
- 239000000203 mixture Substances 0.000 title abstract description 8
- 239000002904 solvent Substances 0.000 claims abstract description 76
- 150000001875 compounds Chemical class 0.000 claims abstract description 28
- 239000002253 acid Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 26
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000007650 screen-printing Methods 0.000 claims abstract description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000002562 thickening agent Substances 0.000 claims abstract description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 13
- 229920000642 polymer Polymers 0.000 claims abstract description 12
- 150000007524 organic acids Chemical class 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Natural products OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 60
- 239000000470 constituent Substances 0.000 claims description 55
- -1 (2-hydroxy phenyl) methyl Chemical group 0.000 claims description 49
- 239000002245 particle Substances 0.000 claims description 17
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 16
- 239000011707 mineral Substances 0.000 claims description 16
- 235000010755 mineral Nutrition 0.000 claims description 16
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 10
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 10
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 9
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 claims description 6
- 229920002678 cellulose Polymers 0.000 claims description 6
- 239000001913 cellulose Substances 0.000 claims description 6
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 6
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 5
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 5
- 239000011775 sodium fluoride Substances 0.000 claims description 5
- 235000013024 sodium fluoride Nutrition 0.000 claims description 5
- BFXAWOHHDUIALU-UHFFFAOYSA-M sodium;hydron;difluoride Chemical compound F.[F-].[Na+] BFXAWOHHDUIALU-UHFFFAOYSA-M 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 4
- 239000004698 Polyethylene Substances 0.000 claims description 4
- 230000001476 alcoholic effect Effects 0.000 claims description 4
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- 235000019445 benzyl alcohol Nutrition 0.000 claims description 4
- 229960004217 benzyl alcohol Drugs 0.000 claims description 4
- 229910052810 boron oxide Inorganic materials 0.000 claims description 4
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 4
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 4
- 229920003086 cellulose ether Polymers 0.000 claims description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 4
- 150000002148 esters Chemical class 0.000 claims description 4
- 150000002576 ketones Chemical class 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- 229920001282 polysaccharide Polymers 0.000 claims description 4
- 239000005017 polysaccharide Substances 0.000 claims description 4
- 229920003987 resole Polymers 0.000 claims description 4
- 229920003169 water-soluble polymer Polymers 0.000 claims description 4
- OOCCDEMITAIZTP-QPJJXVBHSA-N (E)-cinnamyl alcohol Chemical compound OC\C=C\C1=CC=CC=C1 OOCCDEMITAIZTP-QPJJXVBHSA-N 0.000 claims description 3
- WAPNOHKVXSQRPX-UHFFFAOYSA-N 1-phenylethanol Chemical compound CC(O)C1=CC=CC=C1 WAPNOHKVXSQRPX-UHFFFAOYSA-N 0.000 claims description 3
- RNDNSYIPLPAXAZ-UHFFFAOYSA-N 2-Phenyl-1-propanol Chemical compound OCC(C)C1=CC=CC=C1 RNDNSYIPLPAXAZ-UHFFFAOYSA-N 0.000 claims description 3
- WRMNZCZEMHIOCP-UHFFFAOYSA-N 2-phenylethanol Chemical compound OCCC1=CC=CC=C1 WRMNZCZEMHIOCP-UHFFFAOYSA-N 0.000 claims description 3
- ASZZHBXPMOVHCU-UHFFFAOYSA-N 3,9-diazaspiro[5.5]undecane-2,4-dione Chemical compound C1C(=O)NC(=O)CC11CCNCC1 ASZZHBXPMOVHCU-UHFFFAOYSA-N 0.000 claims description 3
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 claims description 3
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 claims description 3
- XZMCDFZZKTWFGF-UHFFFAOYSA-N Cyanamide Chemical compound NC#N XZMCDFZZKTWFGF-UHFFFAOYSA-N 0.000 claims description 3
- UYTPUPDQBNUYGX-UHFFFAOYSA-N Guanine Natural products O=C1NC(N)=NC2=C1N=CN2 UYTPUPDQBNUYGX-UHFFFAOYSA-N 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 239000004793 Polystyrene Substances 0.000 claims description 3
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 3
- 229920002125 Sokalan® Polymers 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 3
- XMUZQOKACOLCSS-UHFFFAOYSA-N [2-(hydroxymethyl)phenyl]methanol Chemical compound OCC1=CC=CC=C1CO XMUZQOKACOLCSS-UHFFFAOYSA-N 0.000 claims description 3
- YWMLORGQOFONNT-UHFFFAOYSA-N [3-(hydroxymethyl)phenyl]methanol Chemical compound OCC1=CC=CC(CO)=C1 YWMLORGQOFONNT-UHFFFAOYSA-N 0.000 claims description 3
- DPDMMXDBJGCCQC-UHFFFAOYSA-N [Na].[Cl] Chemical compound [Na].[Cl] DPDMMXDBJGCCQC-UHFFFAOYSA-N 0.000 claims description 3
- 150000001408 amides Chemical class 0.000 claims description 3
- 239000004305 biphenyl Substances 0.000 claims description 3
- 235000010290 biphenyl Nutrition 0.000 claims description 3
- 239000001110 calcium chloride Substances 0.000 claims description 3
- 229910001628 calcium chloride Inorganic materials 0.000 claims description 3
- 229920002313 fluoropolymer Polymers 0.000 claims description 3
- LHGVFZTZFXWLCP-UHFFFAOYSA-N guaiacol Chemical compound COC1=CC=CC=C1O LHGVFZTZFXWLCP-UHFFFAOYSA-N 0.000 claims description 3
- 229910001629 magnesium chloride Inorganic materials 0.000 claims description 3
- 239000004584 polyacrylic acid Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229920000193 polymethacrylate Polymers 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- LZTRCELOJRDYMQ-UHFFFAOYSA-N triphenylmethanol Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)(O)C1=CC=CC=C1 LZTRCELOJRDYMQ-UHFFFAOYSA-N 0.000 claims description 3
- 150000004676 glycans Chemical class 0.000 claims 1
- 239000010419 fine particle Substances 0.000 abstract 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 150000002484 inorganic compounds Chemical class 0.000 abstract 1
- 229910010272 inorganic material Inorganic materials 0.000 abstract 1
- 150000007522 mineralic acids Chemical class 0.000 abstract 1
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 15
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 15
- 230000032683 aging Effects 0.000 description 11
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 9
- 238000007639 printing Methods 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 235000019439 ethyl acetate Nutrition 0.000 description 5
- 229940017219 methyl propionate Drugs 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 235000019253 formic acid Nutrition 0.000 description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000004804 polysaccharides Chemical class 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 3
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 3
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- IDQBJILTOGBZCR-UHFFFAOYSA-N 1-butoxypropan-1-ol Chemical compound CCCCOC(O)CC IDQBJILTOGBZCR-UHFFFAOYSA-N 0.000 description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 2
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 2
- UHOPWFKONJYLCF-UHFFFAOYSA-N 2-(2-sulfanylethyl)isoindole-1,3-dione Chemical compound C1=CC=C2C(=O)N(CCS)C(=O)C2=C1 UHOPWFKONJYLCF-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- 229920001661 Chitosan Polymers 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- 235000011054 acetic acid Nutrition 0.000 description 2
- 229920013820 alkyl cellulose Polymers 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- JXTHNDFMNIQAHM-UHFFFAOYSA-N dichloroacetic acid Chemical compound OC(=O)C(Cl)Cl JXTHNDFMNIQAHM-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 239000004310 lactic acid Substances 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- FBUKVWPVBMHYJY-UHFFFAOYSA-N nonanoic acid Chemical compound CCCCCCCCC(O)=O FBUKVWPVBMHYJY-UHFFFAOYSA-N 0.000 description 2
- 238000007649 pad printing Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 239000001605 (5-methyl-2-propan-2-ylcyclohexyl) acetate Substances 0.000 description 1
- QYGBYAQGBVHMDD-XQRVVYSFSA-N (z)-2-cyano-3-thiophen-2-ylprop-2-enoic acid Chemical compound OC(=O)C(\C#N)=C/C1=CC=CS1 QYGBYAQGBVHMDD-XQRVVYSFSA-N 0.000 description 1
- 229940058015 1,3-butylene glycol Drugs 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- ZIKLJUUTSQYGQI-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxypropoxy)propane Chemical compound CCOCC(C)OCC(C)OCC ZIKLJUUTSQYGQI-UHFFFAOYSA-N 0.000 description 1
- JXFITNNCZLPZNX-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxypropoxy)propane Chemical compound CCOCC(C)OCC(C)OC JXFITNNCZLPZNX-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- MMELVRLTDGKXGU-UHFFFAOYSA-N 2-ethylhex-1-en-1-ol Chemical compound CCCCC(CC)=CO MMELVRLTDGKXGU-UHFFFAOYSA-N 0.000 description 1
- ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 2-octanone Chemical compound CCCCCCC(C)=O ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 0.000 description 1
- QMAQLCVJIYANPZ-UHFFFAOYSA-N 2-propoxyethyl acetate Chemical compound CCCOCCOC(C)=O QMAQLCVJIYANPZ-UHFFFAOYSA-N 0.000 description 1
- BTWSDELVRHNNLR-UHFFFAOYSA-N 2-propoxyethyl propanoate Chemical compound CCCOCCOC(=O)CC BTWSDELVRHNNLR-UHFFFAOYSA-N 0.000 description 1
- JUDMQYNFOKUYKQ-UHFFFAOYSA-N 2-propoxyhexanoic acid Chemical compound CCCCC(C(O)=O)OCCC JUDMQYNFOKUYKQ-UHFFFAOYSA-N 0.000 description 1
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- VHGIMAJUMPMTFZ-UHFFFAOYSA-N 3-propoxybutyl propanoate Chemical compound CCCOC(C)CCOC(=O)CC VHGIMAJUMPMTFZ-UHFFFAOYSA-N 0.000 description 1
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 1
- OYNJSBBPNFNGNK-UHFFFAOYSA-N 3-propoxypropyl acetate Chemical compound CCCOCCCOC(C)=O OYNJSBBPNFNGNK-UHFFFAOYSA-N 0.000 description 1
- VOOOYSCXEXMXGY-UHFFFAOYSA-N 3-propoxypropyl propanoate Chemical compound CCCOCCCOC(=O)CC VOOOYSCXEXMXGY-UHFFFAOYSA-N 0.000 description 1
- CVYANEKTPUSMIM-UHFFFAOYSA-N 4,4,6,6-tetramethylnonan-5-one Chemical compound CCCC(C)(C)C(=O)C(C)(C)CCC CVYANEKTPUSMIM-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 description 1
- XHXUANMFYXWVNG-UHFFFAOYSA-N D-menthyl acetate Natural products CC(C)C1CCC(C)CC1OC(C)=O XHXUANMFYXWVNG-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229920002907 Guar gum Polymers 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229930195725 Mannitol Natural products 0.000 description 1
- XHXUANMFYXWVNG-ADEWGFFLSA-N Menthyl acetate Natural products CC(C)[C@@H]1CC[C@@H](C)C[C@H]1OC(C)=O XHXUANMFYXWVNG-ADEWGFFLSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 239000000783 alginic acid Substances 0.000 description 1
- 235000010443 alginic acid Nutrition 0.000 description 1
- 229920000615 alginic acid Polymers 0.000 description 1
- 229960001126 alginic acid Drugs 0.000 description 1
- 150000004781 alginic acids Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- UNXHWFMMPAWVPI-UHFFFAOYSA-N butane-1,2,3,4-tetrol Chemical compound OCC(O)C(O)CO UNXHWFMMPAWVPI-UHFFFAOYSA-N 0.000 description 1
- 235000019437 butane-1,3-diol Nutrition 0.000 description 1
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 1
- URBZEXMYYYABCQ-UHFFFAOYSA-N butyl 2-butoxyacetate Chemical compound CCCCOCC(=O)OCCCC URBZEXMYYYABCQ-UHFFFAOYSA-N 0.000 description 1
- VUEYQLJAKGLDNR-UHFFFAOYSA-N butyl 2-ethoxyacetate Chemical compound CCCCOC(=O)COCC VUEYQLJAKGLDNR-UHFFFAOYSA-N 0.000 description 1
- VFGRALUHHHDIQI-UHFFFAOYSA-N butyl 2-hydroxyacetate Chemical compound CCCCOC(=O)CO VFGRALUHHHDIQI-UHFFFAOYSA-N 0.000 description 1
- IWPATTDMSUYMJV-UHFFFAOYSA-N butyl 2-methoxyacetate Chemical compound CCCCOC(=O)COC IWPATTDMSUYMJV-UHFFFAOYSA-N 0.000 description 1
- MENWVOUYOZQBDM-UHFFFAOYSA-N butyl 3-hydroxypropanoate Chemical compound CCCCOC(=O)CCO MENWVOUYOZQBDM-UHFFFAOYSA-N 0.000 description 1
- 229940043232 butyl acetate Drugs 0.000 description 1
- PWLNAUNEAKQYLH-UHFFFAOYSA-N butyric acid octyl ester Natural products CCCCCCCCOC(=O)CCC PWLNAUNEAKQYLH-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 125000004181 carboxyalkyl group Chemical group 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229940045110 chitosan Drugs 0.000 description 1
- FOCAUTSVDIKZOP-UHFFFAOYSA-N chloroacetic acid Chemical compound OC(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- CGZZMOTZOONQIA-UHFFFAOYSA-N cycloheptanone Chemical compound O=C1CCCCCC1 CGZZMOTZOONQIA-UHFFFAOYSA-N 0.000 description 1
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 1
- 229910052607 cyclosilicate Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229960005215 dichloroacetic acid Drugs 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- OCUJLLGVOUDECM-UHFFFAOYSA-N dipivefrin Chemical compound CNCC(O)C1=CC=C(OC(=O)C(C)(C)C)C(OC(=O)C(C)(C)C)=C1 OCUJLLGVOUDECM-UHFFFAOYSA-N 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- SVBSJWKYFYUHTF-UHFFFAOYSA-N ethyl 2-butoxyacetate Chemical compound CCCCOCC(=O)OCC SVBSJWKYFYUHTF-UHFFFAOYSA-N 0.000 description 1
- ZANNOFHADGWOLI-UHFFFAOYSA-N ethyl 2-hydroxyacetate Chemical compound CCOC(=O)CO ZANNOFHADGWOLI-UHFFFAOYSA-N 0.000 description 1
- JLEKJZUYWFJPMB-UHFFFAOYSA-N ethyl 2-methoxyacetate Chemical compound CCOC(=O)COC JLEKJZUYWFJPMB-UHFFFAOYSA-N 0.000 description 1
- UKDLORMZNPQILV-UHFFFAOYSA-N ethyl 3-hydroxypropanoate Chemical compound CCOC(=O)CCO UKDLORMZNPQILV-UHFFFAOYSA-N 0.000 description 1
- 229940093499 ethyl acetate Drugs 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- KNFXXAGQEUUZAZ-UHFFFAOYSA-N ethyl ethaneperoxoate Chemical compound CCOOC(C)=O KNFXXAGQEUUZAZ-UHFFFAOYSA-N 0.000 description 1
- GAEKPEKOJKCEMS-UHFFFAOYSA-N gamma-valerolactone Chemical compound CC1CCC(=O)O1 GAEKPEKOJKCEMS-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000000665 guar gum Substances 0.000 description 1
- 235000010417 guar gum Nutrition 0.000 description 1
- 229960002154 guar gum Drugs 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229940071870 hydroiodic acid Drugs 0.000 description 1
- 229920013821 hydroxy alkyl cellulose Polymers 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 229910052610 inosilicate Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000000594 mannitol Substances 0.000 description 1
- 235000010355 mannitol Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- BKFQHFFZHGUTEZ-UHFFFAOYSA-N methyl 2-butoxyacetate Chemical class CCCCOCC(=O)OC BKFQHFFZHGUTEZ-UHFFFAOYSA-N 0.000 description 1
- YVWPDYFVVMNWDT-UHFFFAOYSA-N methyl 2-ethoxypropanoate Chemical class CCOC(C)C(=O)OC YVWPDYFVVMNWDT-UHFFFAOYSA-N 0.000 description 1
- GSJFXBNYJCXDGI-UHFFFAOYSA-N methyl 2-hydroxyacetate Chemical class COC(=O)CO GSJFXBNYJCXDGI-UHFFFAOYSA-N 0.000 description 1
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical class CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- 229940017144 n-butyl lactate Drugs 0.000 description 1
- UUIQMZJEGPQKFD-UHFFFAOYSA-N n-butyric acid methyl ester Natural products CCCC(=O)OC UUIQMZJEGPQKFD-UHFFFAOYSA-N 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- VGTPKLINSHNZRD-UHFFFAOYSA-N oxoborinic acid Chemical compound OB=O VGTPKLINSHNZRD-UHFFFAOYSA-N 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 229910052615 phyllosilicate Inorganic materials 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229940058401 polytetrafluoroethylene Drugs 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- VBKNTGMWIPUCRF-UHFFFAOYSA-M potassium;fluoride;hydrofluoride Chemical compound F.[F-].[K+] VBKNTGMWIPUCRF-UHFFFAOYSA-M 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- CIBMHJPPKCXONB-UHFFFAOYSA-N propane-2,2-diol Chemical compound CC(C)(O)O CIBMHJPPKCXONB-UHFFFAOYSA-N 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- HNYIJJOTPSKGJM-UHFFFAOYSA-N propoxymethyl acetate Chemical compound CCCOCOC(C)=O HNYIJJOTPSKGJM-UHFFFAOYSA-N 0.000 description 1
- GFKFCNLAMLYNCQ-UHFFFAOYSA-N propoxymethyl propanoate Chemical compound CCCOCOC(=O)CC GFKFCNLAMLYNCQ-UHFFFAOYSA-N 0.000 description 1
- LVDAGIFABMFXSJ-UHFFFAOYSA-N propyl 2-butoxyacetate Chemical compound CCCCOCC(=O)OCCC LVDAGIFABMFXSJ-UHFFFAOYSA-N 0.000 description 1
- ADOFEJQZDCWAIL-UHFFFAOYSA-N propyl 2-ethoxyacetate Chemical compound CCCOC(=O)COCC ADOFEJQZDCWAIL-UHFFFAOYSA-N 0.000 description 1
- ILVGAIQLOCKNQA-UHFFFAOYSA-N propyl 2-hydroxypropanoate Chemical compound CCCOC(=O)C(C)O ILVGAIQLOCKNQA-UHFFFAOYSA-N 0.000 description 1
- KNCDNPMGXGIVOM-UHFFFAOYSA-N propyl 3-hydroxypropanoate Chemical compound CCCOC(=O)CCO KNCDNPMGXGIVOM-UHFFFAOYSA-N 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- 229960004063 propylene glycol Drugs 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052645 tectosilicate Inorganic materials 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- 239000000230 xanthan gum Substances 0.000 description 1
- 229920001285 xanthan gum Polymers 0.000 description 1
- 235000010493 xanthan gum Nutrition 0.000 description 1
- 229940082509 xanthan gum Drugs 0.000 description 1
- 239000000811 xylitol Substances 0.000 description 1
- 235000010447 xylitol Nutrition 0.000 description 1
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 description 1
- 229960002675 xylitol Drugs 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Abstract
The invention relates to an etching paste composition and application thereof. An etching paste composition comprising: a fluorine-containing compound ; a solvent (B) comprising an aromatic alcohol solvent (B-1), water (B-2) and other solvents (B-3); fine particles (C) selected from the group consisting of polymer fine particles (C-1), inorganic compound fine particles (C-2), and combinations of the foregoing; an organic thickener (D); and an acid (E) selected from an organic acid (E-1), an inorganic acid (E-2), or a combination of the foregoing. The invention further provides an etching method, wherein the etching paste composition is screen-printed on a silicon oxide layer or a silicon nitride layer of a substrate of a touch panel, and then an etching step and a cleaning step are carried out. The etching paste composition has good stability over time, and is suitable for screen printing operation.
Description
Technical field
The present invention relates to a kind of etching paste constituent, refer to especially a kind of etching paste constituent that is applicable to silk screen printing.
Background technology
In the structure of contact panel, thin film transistor or solar cell, normal by chemical vapour deposition (Chemical Vapor Deposition, or the mode such as wet chemistry coating CVD), so as to forming silicon oxide or silicon nitride layer, as a rule, as the use of anti-reflecting layer or passivation layer.
The step that removes the specific part of silicon oxide or silicon nitride layer is called etching, prior art comprises employing laser support etching method (laser-supported etching method), or form after mask pattern at photoresistance, optionally carry out etching by wet etching (wet-chemical method) or dry etching method (dry-etching method).
Support etching method with regard to laser, though have high-precision, the mode of operation that its pointwise scans etched pattern line by line needs a large amount of working hours, is unfavorable for industrial volume production.Dry etching method or wet etching, need first use photoresistance to produce mask pattern, then, dry etching method is in vacuum unit, to give electric paste etching or utilize reactant gas etching in flow reactor, processing procedure complexity and apparatus expensive, and Wet-type etching rule to be the chemical agent with etch activity soak and etch pattern, finally photo-resistive mask pattern is divested with solvent, and dry after clear water rinses.
JP2012-129346 discloses a kind of etching reagent constituent, and being specially adapted to etching oxidation indium is tunicle, is made up of: (A) 2-ethylenehydrinsulfonic acid or its salt are scaled 5～20wt% according to 2-ethylenehydrinsulfonic acid the aqueous solution that contains following compositions; And (B) form from hydrofluoric acid, Neutral ammonium fluoride, Potassium monofluoride, Sodium Fluoride and lithium fluoride at least a kind of fluorinated compound 0.05～5wt% selecting group.But wet etching is quite consuming time and complicated, chemical feedstocks used has more toxicity and highly corrosive.
There is at present the practice of more increasingly automated and higher output yield, by printing technology, etching paste is transferred to surface to be etched and carries out etching, do not need to carry out the making step of photo-resistive mask pattern, for example pad printing method, method for stamping, ink jet printing method, or manually print etc.
From the above, with regard to economic benefit, one is applicable to printing technology and the second best in quality etching paste constituent, has active demand.
Summary of the invention
The first object of the present invention is to provide a kind of silk screen printing and good etching paste constituent of ageing stability of being applicable to.
Etching paste constituent of the present invention, comprises:
Fluorochemicals (A);
Solvent (B), comprises aromatic alcohol solvent (B-1), water (B-2) and other solvents (B-3);
Particulate (C), is selected from polymer particles (C-1), mineral compound particulate (C-2), or aforesaid combination;
Organic thickening agent (D); And
Acid (E), is selected from organic acid (E-1), mineral acid (E-2), or aforesaid combination.
Etching paste constituent of the present invention, taking this fluorochemicals (A) as 100 weight parts, the consumption of this solvent (B) is 350 to 2000 weight parts, the consumption of this particulate (C) is 300 to 2000 weight parts, the consumption of this organic thickening agent (D) is 10 to 200 weight parts, and the consumption of this acid (E) is 30 to 600 weight parts.
Etching paste constituent of the present invention, taking this fluorochemicals (A) as 100 weight parts, the consumption of this aromatic alcohol solvent (B-1) is 100 to 500 weight parts, the consumption of water (B-2) is 50 to 300 weight parts, and the consumption of other solvents (B-3) is 200 to 1200 weight parts.
Etching paste constituent of the present invention, this fluorochemicals (A) is that at least one is selected from the compound by following formed group: ammonium bifluoride, Neutral ammonium fluoride, sodium bifluoride, Sodium Fluoride, potassium hydrogen fluoride, Potassium monofluoride, barium fluoride, and ammonium borofluoride.
Etching paste constituent of the present invention, this aromatic alcohol solvent (B-1) is at least one compound that is selected from following formed group: phenylcarbinol, (2-hydroxy phenyl) methyl alcohol, (p-methoxy-phenyl) methyl alcohol, (3,4-dihydroxy phenyl) methyl alcohol, 4-(methylol) benzene-1,2-glycol, (4-hydroxy 3-methoxybenzene base) methyl alcohol, (3,4-Dimethoxyphenyl) methyl alcohol, (4-isopropyl phenyl) methyl alcohol, 2 phenylethyl alcohol, 1-phenylethyl alcohol, 2-phenyl-1-propanol, p-methylphenyl alcohol, 2-(4-hydroxy 3-methoxybenzene base) methane-1-alcohol, 2-(3,4-Dimethoxyphenyl) methane-1-alcohol, 3-phenyl-propane-1-alcohol, 2-phenyl-propane-2-alcohol, styryl carbinol, 3-(4-hydroxy 3-methoxybenzene base) third-2-alkene-1-alcohol, 3-(4-hydroxyl-3,5-p-methoxy-phenyl) third-2-alkene-1-alcohol, biphenyl methyl alcohol, trityl alcohol, 1,2-biphenyl methane-1,2-glycol, 1,1,2,2-tetraphenyl methane-1,2-glycol, benzene-1,2-dimethanol, benzene-1,3-dimethanol, and benzene-Isosorbide-5-Nitrae-dimethanol.
Etching paste constituent of the present invention, these other solvents (B-3) are that at least one is selected from the solvent by following formed group: do not have alcoholic solvent, the ether solvent of aromatic base, the esters solvent of carboxylic acid and a ketones solvent.
Etching paste constituent of the present invention, this polymer particles (C-1) is that at least one is selected from the polymkeric substance by following formed group: polyethylene, polystyrene, polyacrylic acid, polymeric amide, polyimide, polymethacrylate, trimeric cyanamide, carbamate, benzo guanine, resol, polyorganosiloxane resin, fluorinated polymer, micronization Mierocrystalline cellulose, and micronization wax.
Etching paste constituent of the present invention, this mineral compound particulate (C-2) is that at least one is selected from the compound by following formed group: aluminum oxide, Calcium Fluoride (Fluorspan), boron oxide, titanium oxide, zirconium white, Repone K, magnesium chloride, calcium chloride, and sodium-chlor.
Etching paste constituent of the present invention, this organic thickening agent (D) is that at least one is selected from the compound by following formed group: water-soluble cellulose ether, polysaccharide and water-soluble polymers.
Another object of the present invention is to provide a kind of engraving method.
Engraving method of the present invention, comprises:
Contact panel is provided, and it comprises substrate, and is arranged at silicon oxide layer or silicon nitride layer on this substrate;
By the silk screen printing of foregoing etching paste constituent on this silicon oxide layer or silicon nitride layer;
Carry out etching step; And
Carry out cleaning step.
Beneficial effect of the present invention is: this etching paste constituent, regulate and control its volatility and degree of uniformity by the solvent that contains special component and ratio, and while being subsequently applied to silk screen printing, viscosity ageing stability is good, and is difficult for having the situation of plug net to occur.
Embodiment
Etching paste constituent of the present invention, comprises:
Fluorochemicals (A);
Solvent (B), comprises aromatic alcohol solvent (B-1), water (B-2) and other solvents (B-3);
Particulate (C), is selected from polymer particles (C-1), mineral compound particulate (C-2), or aforesaid combination;
Organic thickening agent (D); And
Acid (E), is selected from organic acid (E-1), mineral acid (E-2), or aforesaid combination.
This etching paste constituent, by the adjusting of solvent composition, can be controlled volatility and the degree of uniformity of this etching paste constituent, while being subsequently applied to silk screen printing, having advantages of that ageing stability is good and does not fill in net.
Taking this fluorochemicals (A) as 100 weight parts, the consumption of this solvent (B) is 350 to 2000 weight parts, the consumption of this particulate (C) is 300 to 2000 weight parts, the consumption of this organic thickening agent (D) is 10 to 200 weight parts, and the consumption of this acid (E) is 30 to 600 weight parts.
Preferably, taking this fluorochemicals (A) as 100 weight parts, the consumption of this solvent (B) is 450 to 1800 weight parts, the consumption of this particulate (C) is 400 to 1800 weight parts, the consumption of this organic thickening agent (D) is 15 to 180 weight parts, and the consumption of this acid (E) is 40 to 550 weight parts.
More preferably, taking this fluorochemicals (A) as 100 weight parts, the consumption of this solvent (B) is 500 to 1500 weight parts, the consumption of this particulate (C) is 500 to 1500 weight parts, the consumption of this organic thickening agent (D) is 20 to 150 weight parts, and the consumption of this acid (E) is 50 to 500 weight parts.
This aromatic alcohol solvent (B-1), because volatility is low, can regulates the viscosity of this etching paste constituent and reduce the viscosity-modifying causing because of solvent evaporates; If do not use, the problem generation such as plug net while having the not good and silk screen printing of viscosity ageing stability.If do not make water (B-2), this etching paste constituent may have the problem of plug net to produce in the time using.If do not use other solvents (B-3), have through time viscosity stability not good problem.
Taking this fluorochemicals (A) as 100 weight parts, the consumption of this aromatic alcohol solvent (B-1) is 100 to 500 weight parts, the consumption of water (B-2) is 50 to 300 weight parts, and the consumption of other solvents (B-3) is 200 to 1200 weight parts.
Preferably, this fluorochemicals (A) is 100 weight part meters, the consumption of this aromatic alcohol solvent (B-1) is 150 to 450 weight parts, the consumption of water (B-2) is 60 to 270 weight parts, and the consumption of other solvents (B-3) is 250 to 1000 weight parts.
More preferably, taking this fluorochemicals (A) as 100 weight parts, the consumption of this aromatic alcohol solvent (B-1) is 200 to 400 weight parts, the consumption of water (B-2) is 70 to 250 weight parts, and the consumption of other solvents (B-3) is 300 to 800 weight parts.
This fluorochemicals (A) is that at least one is selected from the compound by following formed group: ammonium bifluoride (Ammonium bifluoride), Neutral ammonium fluoride (Ammonium fluoride), sodium bifluoride (Sodium bifluoride), Sodium Fluoride (Sodium fluoride), potassium hydrogen fluoride (Potassium bifluoride), Potassium monofluoride (Potassium fluoride), barium fluoride (Barium fluoride), and ammonium borofluoride (Ammonium Fluoborate).
Preferably, this fluorochemicals (A) is that at least one is selected from the compound by following formed group: ammonium bifluoride, sodium bifluoride and barium fluoride.
This aromatic alcohol solvent (B-1) is at least one compound that is selected from following formed group: phenylcarbinol, (2-hydroxy phenyl) methyl alcohol, (p-methoxy-phenyl) methyl alcohol, (3,4-dihydroxy phenyl) methyl alcohol, 4-(methylol) benzene-1,2-glycol, (4-hydroxy 3-methoxybenzene base) methyl alcohol, (3,4-Dimethoxyphenyl) methyl alcohol, (4-isopropyl phenyl) methyl alcohol, 2 phenylethyl alcohol, 1-phenylethyl alcohol, 2-phenyl-1-propanol, p-methylphenyl alcohol, 2-(4-hydroxy 3-methoxybenzene base) methane-1-alcohol, 2-(3,4-Dimethoxyphenyl) methane-1-alcohol, 3-phenyl-propane-1-alcohol, 2-phenyl-propane-2-alcohol, styryl carbinol, 3-(4-hydroxy 3-methoxybenzene base) third-2-alkene-1-alcohol, 3-(4-hydroxyl-3,5-p-methoxy-phenyl) third-2-alkene-1-alcohol, biphenyl methyl alcohol, trityl alcohol, 1,2-biphenyl methane-1,2-glycol, 1,1,2,2-tetraphenyl methane-1,2-glycol, benzene-1,2-dimethanol, benzene-1,3-dimethanol, and benzene-Isosorbide-5-Nitrae-dimethanol.
Preferably, this aromatic alcohol solvent (B-1) is at least one compound that is selected from following formed group: phenylcarbinol, (2-hydroxy phenyl) methyl alcohol and (4-isopropyl phenyl) methyl alcohol.
These other solvents (B-3) are that at least one is selected from the solvent by following formed group: do not have alcoholic solvent, the ether solvent of aromatic base, the esters solvent of carboxylic acid and a ketones solvent.
This alcoholic solvent of not having aromatic base is that at least one is selected from the solvent by following formed group: glycerol, 1,2-propylene glycol, 1,4-butyleneglycol, 1,3 butylene glycol, 1,5-PD, 2-ethyl-1-hexenol, ethylene glycol, Diethylene Glycol, dipropylene glycol, methyl alcohol, ethanol, Virahol, n-propyl alcohol, amylalcohol, Cetyl OH, 1,2,3,4-butantetraol, third-2-alkene-1-alcohol, 2-propine-1-alcohol, 3,7-dimethyl-g-2,6-diene-1-alcohol, Xylitol, and N.F,USP MANNITOL.
This ether solvent is that at least one is selected from the solvent by following formed group: tetrahydrofuran (THF), ethylene glycol monobutyl ether, triethylene glycol monomethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, ethylene glycol ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, 2-Butoxyethyl acetate, ethylene glycol ether acetate, glycol methyl ether acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethylmethyl ether, DPE, dipropylene glycol dme, dipropylene glycol diethyl ether, dipropylene glycol methyl ethyl ether, propylene glycol monomethyl ether, dihydroxypropane single-ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, 1-Methoxy-2-propyl acetate, propylene-glycol ethyl ether acetic ester, propylene glycol propyl ether acetic ester, propandiol butyl ether acetic ester, propylene glycol monomethyl ether acetate, propylene-glycol ethyl ether propionic ester, propylene glycol propyl ether propionic ester, and propandiol butyl ether propionic ester.
The esters solvent of this carboxylic acid is that at least one is selected from the solvent by following formed group: 2-(2-n-butoxy oxyethyl group) ethyl acetate, propylene carbonate, gamma-butyrolactone, γ-valerolactone, δ-valerolactone, methyl acetate, ethyl acetate, propyl acetate, butylacetate, 2 hydroxy propanoic acid ethyl ester, 2-hydroxy-2-methyl methyl propionate, 2-hydroxy-2-methyl ethyl propionate, hydroxyethanoic acid methyl esters, hydroxyethanoic acid ethyl ester, hydroxyethanoic acid butyl ester, methyl lactate, propyl lactate, n-Butyl lactate, 3-hydroxy methyl propionate, 3-hydroxy-propionic acid ethyl ester, 3-hydroxy-propionic acid propyl ester, 3-hydroxy-propionic acid butyl ester, 2-hydroxy-3-methyl methyl-butyrate, methoxy menthyl acetate, methoxyacetic acid ethyl ester, methoxyacetic acid butyl ester, ethoxy acetate, ethoxy ethyl acetate, ethoxyacetic acid propyl ester, ethoxyacetic acid butyl ester, propoxy-methyl acetate, propoxy-ethyl acetate, propoxy-propyl acetate, propoxy-butylacetate, butoxy acetic acid methyl esters, butoxy acetic acid ethyl ester, butoxy acetic acid propyl ester, butoxy acetic acid butyl ester, 3-methoxyl group butylacetic acid ester, 2-methoxy methyl propionate, 2-methoxy propyl acetoacetic ester, 2-methoxy propyl propyl propionate, 2-methoxy propyl acid butyl ester, 2-ethoxy-propionic acid methyl esters, 2-ethoxyl ethyl propionate, 2-ethoxy-c propyl propionate, 2-ethoxy-c acid butyl ester, 2-butoxy methyl propionate, 2-butoxy methyl propionate, 2-butoxy ethyl propionate, 2-butoxy propyl propionate, 2-butoxy butyl propionate, 3-methoxy methyl propionate, 3-methoxy propyl acetoacetic ester, 3-methoxy propyl propyl propionate, 3-methoxy propyl acid butyl ester, 3-ethoxy-propionic acid methyl esters, 3-ethoxyl ethyl propionate, 3-ethoxy-c propyl propionate, 3-ethoxy-c acid butyl ester, 3-propoxy-methyl propionate, 3-propoxy-ethyl propionate, 3-propoxy-propyl propionate, 3-propoxy-butyl propionate, 3-butoxy methyl propionate, 3-butoxy ethyl propionate, 3-butoxy propyl propionate, and 3-butoxy butyl propionate etc.
This ketones solvent is that at least one is selected from the solvent by following formed group: methyl phenyl ketone, methyl-methyl-n-butyl ketone, methyln-hexyl ketone, 4-hydroxy-4-methyl-2-pentanone, 1-methyl-2-Pyrrolizidine ketone, methylethylketone, pimelinketone, suberone, n-methlpyrrolidone, 2-heptanone, 3-heptanone, and diacetone alcohol.
Preferably, these other solvents (B-3) are that at least one is selected from the solvent by following formed group: ethylene glycol, ethylene glycol monobutyl ether, and propylene carbonate.
This polymer particles (C-1) is that at least one is selected from the polymkeric substance by following formed group: polyethylene, polystyrene, polyacrylic acid, polymeric amide, polyimide, polymethacrylate, trimeric cyanamide, carbamate, benzo guanine, resol, polyorganosiloxane resin, fluorinated polymer (for example tetrafluoroethylene (Poly-tetrafluoroethylene) or polyvinylidene difluoride (PVDF) (Polyvinylidene fluoride)), micronization Mierocrystalline cellulose and micronization wax (micronised wax); Wherein, this poly commercial goods " Coathylene HX1681 " that for example Dupont company produces.Preferably, this polymer particles (C-1) is tetrafluoroethylene, polyethylene, or resol.
Preferably, this mineral compound particulate (C-2) is that at least one is selected from the compound by following formed group: aluminum oxide, Calcium Fluoride (Fluorspan), boron oxide, titanium oxide, zirconium white, Repone K, magnesium chloride, calcium chloride, and sodium-chlor.
More preferably, this mineral compound particulate (C-2) is Calcium Fluoride (Fluorspan), aluminum oxide, or boron oxide.
The particle size range of this polymer particles (C-1) is 10nm to 3000nm, preferably, the particle size range of this polymer particles (C-1) is 100nm to 2000nm, and more preferably, the particle size range of this polymer particles (C-1) is 500nm to 1500nm.
The particle size range of this mineral compound particulate (C-2) is 10nm to 3000nm, preferably, the particle size range of this mineral compound particulate (C-2) is 100nm to 2000nm, more preferably, the particle size range of this mineral compound particulate (C-2) is 500nm to 1500nm.
Above-mentioned polymer particles (C-1) and this mineral compound particulate (C-2) contribute to promote etch-rate and the etch depth of this etching paste constituent.
This organic thickening agent (D) is that at least one is selected from the compound by following formed group: water-soluble cellulose ether, polysaccharide and water-soluble polymers.
This water-soluble cellulose ether is selected from: alkylcellulose, and for example Mierocrystalline cellulose, methylcellulose gum, or ethyl cellulose etc.; Hydroxy alkyl cellulose, for example Vltra tears, Natvosol, or hydroxypropylcellulose etc.; Or carboxyl alkyl cellulose, such as carboxymethyl cellulose etc.
This polysaccharide is selected from chitosan, alginic acid, guar gum, xanthan gum, or rhamsan gum (Rhamsan Gum).
This water-soluble polymers is selected from polyvinyl alcohol, polyvinylpyrrolidone (polyvinylpyrrolidone).
Preferably, this organic thickening agent (D) is selected from Mierocrystalline cellulose, polyvinylpyrrolidone, or chitosan.
This organic acid (E-1) has C
1to C
10straight or branched alkyl, and be that at least one is selected from the acid by following formed group: alkyl carboxylic acid, hydroxycarboxylic acid and dicarboxylic acid.
This organic acid (E-1) is that at least one is selected from the acid by following formed group: oxalic acid, formic acid, acetic acid, propionic acid, butyric acid, valeric acid, caproic acid, enanthic acid, sad, n-nonanoic acid, capric acid, citric acid, Monochloro Acetic Acid, dichloro acetic acid, trichoroacetic acid(TCA), trifluoroacetic acid and lactic acid.Preferably, this organic acid (E-1) is selected from formic acid, acetic acid or lactic acid.
This mineral acid (E-2) is that at least one is selected from the acid by following formed group: spirit of salt, Hydrogen bromide, hydroiodic acid HI, phosphorous acid, Hypophosporous Acid, 50, phosphoric acid, sulfuric acid, sulfurous acid, boric acid, metaboric acid, and nitric acid.
Preferably, this mineral acid (E-2) is selected from nitric acid, phosphoric acid, or sulfuric acid.
The range of viscosities of this etching paste constituent is 1 to 500Pas, and preferably, the range of viscosities of this etching paste constituent is 3 to 300Pas, and more preferably, the range of viscosities of this etching paste constituent is 5 to 200Pas.
The preparation method of this etching paste constituent is mixed with each other fluorochemicals (A), solvent (B), particulate (C), organic thickening agent (D) and acid (E), stirs enough time to forming the viscous batter with thixotropic nature.Stirring can or be carried out be warming up to suitable temp in the situation that at 15 to 35 DEG C.
Engraving method of the present invention, comprises:
Contact panel is provided, comprises substrate, and be arranged at silicon oxide layer or silicon nitride layer on this substrate;
By the silk screen printing of foregoing etching paste constituent on this silicon oxide layer or silicon nitride layer;
Carry out etching step; And
Carry out cleaning step.
The material of this substrate is not particularly limited, and general material all can be suitable for.
So-called silicon oxide layer, except the pure SiO of glass or quartz
2outward, also comprise all based on SiO
2system, comprise by SiO
2discrete and/or be coupled to SiO
4the system forming, also can contain other components.By SiO
2discrete and/or be coupled to SiO
4the system forming is pyrosilicate, dual-silicates, cyclosilicate, inosilicate, phyllosilicate, tectosilicate for example, the elements such as this other component such as calcium, sodium, aluminium, lead, lithium, magnesium, barium, potassium, boron, beryllium, phosphorus, gallium, arsenic, antimony, lanthanum, zinc, thorium, copper, chromium, manganese, iron, cobalt, nickel, molybdenum, vanadium, titanium, gold, platinum, palladium, silver, cerium, caesium, niobium, tantalum, zirconium, neodymium, praseodymium, and described element is not limited to be present in SiO with oxide compound, carbonate, nitrate, phosphoric acid salt, vitriol and/or halid form
2system in or as doped element.
So-called silicon nitride layer refers to crystallization and partial crystallization (being commonly referred to crystallite) system, comprises α-Si
3n
4and β-Si
3n
4the Si of upgrading
3n
4, and the SiN of all crystallizations and partial crystallization
xand SiN
x: H.Except the silicon nitride of crystallization can also comprise other element, such as boron, aluminium, gallium, indium, phosphorus, arsenic or antimony etc.
Engraving method of the present invention is not limited to silk screen printing, affiliated technical field has knows that the knowledgeable can be by known printing process conventionally, this etching paste constituent is applied on region to be etched, for example, by pad printing method, method for stamping, ink jet printing method, or manually print etc.
The gauze wire of silk screen printing by containing printing stencil or metal etch silk screen contact with silicon oxide layer on this substrate or silicon nitride layer, and this etching paste constituent are transferred on this substrate to silicon oxide layer or silicon nitride layer carries out this etching step.Silk screen material used is not particularly limited, and is conventionally made up of plastics or wire.
In the time of application, this etching paste constituent can be applied to whole region, or is optionally applied on silicon oxide layer to be etched or silicon nitride layer surface in suitable mode, and for example using known printing process to be optionally applied to needs etched region.If necessary, can input energy and activate this etching paste constituent, the concrete practice is that this etching paste constituent is exposed to 10 seconds to 15 minutes under energy, is preferably and exposes 30 seconds to 2 minutes.The etch temperature scope of this etching paste constituent is 20 to 500 DEG C, is preferably 25 to 400 DEG C, is more preferably 30 to 300 DEG C.
In the time that whole region or the etching in selectivity printing zone complete, can adulterate by further heating, or use solvent or mixed solvent to wash away the etching paste constituent of use, or pass through to heat the etching paste constituent burn off of using.Preferably, etching is cleaned with water after completing.
The present invention will be described further with regard to following examples, but will be appreciated that, this embodiment is only for illustrating use, and should not be interpreted as restriction of the invention process.
< embodiment 1 to 9 and comparative example 1 to 6 >
[embodiment 1]
In the polypropylene cup of 1 liter, at in 15 to 35 DEG C, add the ammonium bifluoride (A-1) of 100 weight parts, (4-isopropyl phenyl) methyl alcohol (B-1-3) of 100 weight parts, the water (B-2) of 100 weight parts, formic acid (E-1-1) uniform stirring of the ethylene glycol (B-3-1) of 300 weight parts and 30 weight parts is after 5 minutes, in stirring, add the tetrafluoroethylene (C-1-1) of 300 weight parts on one side, and stir the Mierocrystalline cellulose (D-1) that finally adds 10 weight parts for 5 minutes, under rotating speed 500rmp, stir 60 minutes, can make the etching paste constituent of embodiment 1.
[embodiment 2 to 9 and comparative example 1 to 6]
Embodiment 2 to 9 and comparative example 1 to 6 are to prepare this etching paste constituent with the step identical with embodiment 1, and different places are: change kind and the usage quantity thereof of chemical, the kind of this chemical and usage quantity thereof are as shown in table 1 and table 2.
< test item >
The etching paste constituent of embodiment 1 to 9 and comparative example 1 to 6 is carried out to following detection, and by outcome record in table 1 and table 2.
1. viscosity ageing stability test
At 25 DEG C, measure respectively the viscosity before described etching paste constituent leaves standstill with viscosity machine, be designated as μ
1, then described etching paste constituent is left standstill to 180 minutes, then measure the viscosity after leaving standstill with viscosity machine respectively, be designated as μ
2, and calculate viscosity velocity of variation according to following formula, so as to evaluating the viscosity ageing stability of described etching paste constituent.
Viscosity velocity of variation=| μ
2-μ
1|/μ
1× 100%
Zero: viscosity velocity of variation <10%
×: viscosity velocity of variation >=10%
2. plug net test
By the etching paste constituent preparing, use respectively screen-printing machine (east science and technology far away is produced, model AT-45PA) to coordinate mesh number 180 orders/cm
2in 15 to 35 DEG C of half tones at carry out wire mark test, on this half tone, there is the print pattern of 500 μ m live widths, whether after repeating five printings, observing print pattern has the residual plug net situation of etching paste to occur.
Zero: residual without etching paste
×: there is etching paste residual
Table 1
Note, "-" represent not add.
Table 2
Note, "-" represent not add.
As shown in table 1, comparative example 4 to 6 only uses the solvent (B) of single kind, and viscosity ageing stability is not good, and has plug net problem.Comparative example 1 to 3 collocation is used two kinds of solvents, wherein comparative example 1 only makes water (B-2) and other solvents (B-3), do not contain aromatic alcohol solvent (B-1), viscosity ageing stability the result not good and test of plug net does not conform with demand; Comparative example 2 does not make water (B-2), has plug net problem to produce; Comparative example 3 does not use other solvents, and viscosity ageing stability is not good.
The solvent (B) of embodiment 1 to 9 comprises aromatic alcohol solvent (B-1), water (B-2) and other solvents (B-3), these etching paste constituent viscosity ageing stabilities are good, and do not have plug net problem during for silk screen printing and produce.
In sum, etching paste constituent of the present invention is by selecting the solvent of specific composition, and viscosity ageing stability is good, is specially adapted to adopt the engraving method of silk screen printing, and does not have the generation of plug net problem, so really can reach object of the present invention.
The above, it is only preferred embodiment of the present invention, can not limit scope of the invention process with this, the simple equivalence of conventionally doing according to the claims in the present invention book and patent specification content changes and modifies, and all still remains within the scope of the patent.
Claims (10)
1. an etching paste constituent, is characterized in that, it comprises:
Fluorochemicals (A);
Solvent (B), comprises aromatic alcohol solvent (B-1), water (B-2) and other solvents (B-3);
Particulate (C), is selected from polymer particles (C-1), mineral compound particulate (C-2), or aforesaid combination;
Organic thickening agent (D); And
Acid (E), is selected from organic acid (E-1), mineral acid (E-2), or aforesaid combination.
2. etching paste constituent according to claim 1, it is characterized in that, taking this fluorochemicals (A) as 100 weight parts, the consumption of this solvent (B) is 350 to 2000 weight parts, the consumption of this particulate (C) is 300 to 2000 weight parts, the consumption of this organic thickening agent (D) is 10 to 200 weight parts, and the consumption of this acid (E) is 30 to 600 weight parts.
3. etching paste constituent according to claim 1, it is characterized in that, taking this fluorochemicals (A) as 100 weight parts, the consumption of this aromatic alcohol solvent (B-1) is 100 to 500 weight parts, the consumption of water (B-2) is 50 to 300 weight parts, and the consumption of other solvents (B-3) is 200 to 1200 weight parts.
4. etching paste constituent according to claim 1, it is characterized in that, this fluorochemicals (A) is that at least one is selected from the compound by following formed group: ammonium bifluoride, Neutral ammonium fluoride, sodium bifluoride, Sodium Fluoride, potassium hydrogen fluoride, Potassium monofluoride, barium fluoride, and ammonium borofluoride.
5. etching paste constituent according to claim 1, is characterized in that, this aromatic alcohol solvent (B-1) is at least one compound that is selected from following formed group: phenylcarbinol, (2-hydroxy phenyl) methyl alcohol, (p-methoxy-phenyl) methyl alcohol, (3,4-dihydroxy phenyl) methyl alcohol, 4-(methylol) benzene-1,2-glycol, (4-hydroxy 3-methoxybenzene base) methyl alcohol, (3,4-Dimethoxyphenyl) methyl alcohol, (4-isopropyl phenyl) methyl alcohol, 2 phenylethyl alcohol, 1-phenylethyl alcohol, 2-phenyl-1-propanol, p-methylphenyl alcohol, 2-(4-hydroxy 3-methoxybenzene base) methane-1-alcohol, 2-(3,4-Dimethoxyphenyl) methane-1-alcohol, 3-phenyl-propane-1-alcohol, 2-phenyl-propane-2-alcohol, styryl carbinol, 3-(4-hydroxy 3-methoxybenzene base) third-2-alkene-1-alcohol, 3-(4-hydroxyl-3,5-p-methoxy-phenyl) third-2-alkene-1-alcohol, biphenyl methyl alcohol, trityl alcohol, 1,2-biphenyl methane-1,2-glycol, 1,1,2,2-tetraphenyl methane-1,2-glycol, benzene-1,2-dimethanol, benzene-1,3-dimethanol, and benzene-Isosorbide-5-Nitrae-dimethanol.
6. etching paste constituent according to claim 1, it is characterized in that, these other solvents (B-3) are that at least one is selected from the solvent by following formed group: do not have alcoholic solvent, the ether solvent of aromatic base, the esters solvent of carboxylic acid and a ketones solvent.
7. etching paste constituent according to claim 1, it is characterized in that, this polymer particles (C-1) is that at least one is selected from the polymkeric substance by following formed group: polyethylene, polystyrene, polyacrylic acid, polymeric amide, polyimide, polymethacrylate, trimeric cyanamide, carbamate, benzo guanine, resol, polyorganosiloxane resin, fluorinated polymer, micronization Mierocrystalline cellulose, and micronization wax.
8. etching paste constituent according to claim 1, it is characterized in that, this mineral compound particulate (C-2) is that at least one is selected from the compound by following formed group: aluminum oxide, Calcium Fluoride (Fluorspan), boron oxide, titanium oxide, zirconium white, Repone K, magnesium chloride, calcium chloride, and sodium-chlor.
9. etching paste constituent according to claim 1, is characterized in that, this organic thickening agent (D) is that at least one is selected from the compound by following formed group: water-soluble cellulose ether, polysaccharide and water-soluble polymers.
10. an engraving method, is characterized in that, it comprises:
Contact panel is provided, and it comprises substrate, and is arranged at silicon oxide layer or silicon nitride layer on this substrate;
By according to the etching paste constituent silk screen printing described in any one in claim 1 to 9 on this silicon oxide layer or silicon nitride layer;
Carry out etching step; And
Carry out cleaning step.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102115287 | 2013-04-29 | ||
| TW102115287A TWI488943B (en) | 2013-04-29 | 2013-04-29 | Etching paste composition and the application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104119921A true CN104119921A (en) | 2014-10-29 |
Family
ID=51765565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410157734.0A Pending CN104119921A (en) | 2013-04-29 | 2014-04-18 | Etching paste composition and application thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104119921A (en) |
| TW (1) | TWI488943B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106032074A (en) * | 2015-03-11 | 2016-10-19 | 南昌欧菲光学技术有限公司 | A display device, a glass cover plate and a manufacturing method of the glass cover plate |
| CN109722248A (en) * | 2018-01-03 | 2019-05-07 | 厦门蓝科电子科技有限公司 | A kind of etching paste and preparation method thereof |
| CN110129056A (en) * | 2019-04-08 | 2019-08-16 | 沧州硕金生物科技有限公司 | Etching agent composite for integrated circuit |
| CN110218563A (en) * | 2019-06-11 | 2019-09-10 | 厦门市豪尔新材料股份有限公司 | A kind of manufacturing method of etching slurry and its preparation method and application and solar battery |
| CN110240906A (en) * | 2018-03-07 | 2019-09-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Group III-V semiconductor etching liquid and its preparation method and application |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5965465A (en) * | 1997-09-18 | 1999-10-12 | International Business Machines Corporation | Etching of silicon nitride |
| TW451347B (en) * | 2000-06-16 | 2001-08-21 | United Microelectronics Corp | Cleaning method after polycide gate etching |
| CN101528884A (en) * | 2006-11-01 | 2009-09-09 | 默克专利股份有限公司 | Etching paste containing particles for silicon surfaces and layers |
| CN102254814A (en) * | 2011-08-16 | 2011-11-23 | 中国科学院电工研究所 | Silicon oxide selective etching solution, preparation method and application thereof |
| TW201231625A (en) * | 2010-12-15 | 2012-08-01 | Adeka Corp | Etchant composition |
| TW201250818A (en) * | 2011-05-17 | 2012-12-16 | Fujifilm Corp | Etching method and etching liquid used therein, manufacturing method of semiconductor element using the same |
| CN102893421A (en) * | 2010-05-21 | 2013-01-23 | 默克专利股份有限公司 | Selectively etching of a carbon nano tubes (cnt) polymer matrix on a plastic substructure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140021400A1 (en) * | 2010-12-15 | 2014-01-23 | Sun Chemical Corporation | Printable etchant compositions for etching silver nanoware-based transparent, conductive film |
-
2013
- 2013-04-29 TW TW102115287A patent/TWI488943B/en not_active IP Right Cessation
-
2014
- 2014-04-18 CN CN201410157734.0A patent/CN104119921A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5965465A (en) * | 1997-09-18 | 1999-10-12 | International Business Machines Corporation | Etching of silicon nitride |
| TW394992B (en) * | 1997-09-18 | 2000-06-21 | Ibm | Etching of silicon nitride |
| TW451347B (en) * | 2000-06-16 | 2001-08-21 | United Microelectronics Corp | Cleaning method after polycide gate etching |
| CN101528884A (en) * | 2006-11-01 | 2009-09-09 | 默克专利股份有限公司 | Etching paste containing particles for silicon surfaces and layers |
| CN102893421A (en) * | 2010-05-21 | 2013-01-23 | 默克专利股份有限公司 | Selectively etching of a carbon nano tubes (cnt) polymer matrix on a plastic substructure |
| TW201231625A (en) * | 2010-12-15 | 2012-08-01 | Adeka Corp | Etchant composition |
| TW201250818A (en) * | 2011-05-17 | 2012-12-16 | Fujifilm Corp | Etching method and etching liquid used therein, manufacturing method of semiconductor element using the same |
| CN102254814A (en) * | 2011-08-16 | 2011-11-23 | 中国科学院电工研究所 | Silicon oxide selective etching solution, preparation method and application thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106032074A (en) * | 2015-03-11 | 2016-10-19 | 南昌欧菲光学技术有限公司 | A display device, a glass cover plate and a manufacturing method of the glass cover plate |
| CN109722248A (en) * | 2018-01-03 | 2019-05-07 | 厦门蓝科电子科技有限公司 | A kind of etching paste and preparation method thereof |
| CN110240906A (en) * | 2018-03-07 | 2019-09-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Group III-V semiconductor etching liquid and its preparation method and application |
| CN110129056A (en) * | 2019-04-08 | 2019-08-16 | 沧州硕金生物科技有限公司 | Etching agent composite for integrated circuit |
| CN110218563A (en) * | 2019-06-11 | 2019-09-10 | 厦门市豪尔新材料股份有限公司 | A kind of manufacturing method of etching slurry and its preparation method and application and solar battery |
| CN110218563B (en) * | 2019-06-11 | 2021-04-06 | 厦门市豪尔新材料股份有限公司 | Etching slurry, preparation method and application thereof, and manufacturing method of solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201441346A (en) | 2014-11-01 |
| TWI488943B (en) | 2015-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104119921A (en) | Etching paste composition and application thereof | |
| CN102169994B (en) | Negative electrode base member | |
| CN105378895B (en) | The manufacture method of impurity diffusion composition and semiconductor element | |
| TW200835778A (en) | Particle-containing etching pastes for silicon surfaces and layers | |
| US20050247674A1 (en) | Etching pastes for silicon surfaces and layers | |
| WO2007020833A1 (en) | Masking paste, method for producing same, and method for manufacturing solar cell using masking paste | |
| CN105219167B (en) | It is a kind of to have conductive film made of the alcohol radical nano silver wire ink of conductive filler | |
| CN103429681B (en) | Formulations of printable aluminium oxide inks | |
| CN107210201B (en) | P-type impurity diffusion composition, method for manufacturing semiconductor element using same, solar cell, and method for manufacturing solar cell | |
| CN101194187A (en) | Method for forming antireflection film | |
| CN103493220A (en) | Aluminium oxide pastes and method for the use thereof | |
| JP2011187894A (en) | Coating liquid for diffusing phosphor dopant, coating film formed by the same, and method for manufacturing solar cell | |
| CN107484432A (en) | The screen printing boron doping thickener of the phosphorus diffusion in common method of diffusion can be suppressed simultaneously | |
| CN102859658A (en) | Diffusion agent composition, method of forming an impurity diffusion layer, and solar cell | |
| CN101098833A (en) | Printable medium for the etching of silicon dioxide and silicon nitride layers | |
| TW200407463A (en) | Etching pastes for titanium oxide surfaces | |
| JP5991846B2 (en) | Film-forming composition, diffusing agent composition, method for producing film-forming composition, and method for producing diffusing agent composition | |
| CN110218563B (en) | Etching slurry, preparation method and application thereof, and manufacturing method of solar cell | |
| CN108165956A (en) | A kind of preparation method for the AZO laminated films for adding graphene | |
| CN104737278B (en) | Etachable material | |
| CN114342101A (en) | Impurity diffusion composition, method for manufacturing semiconductor element using same, and method for manufacturing solar cell | |
| CN103489932B (en) | A kind of nano-silicon phosphorus slurry and its preparation method and application | |
| CN1494090A (en) | Photosensitive conductive paste and conductive body pattern formed thereby | |
| CN105111824B (en) | A kind of alcohol radical nano silver wire ink containing conductive filler | |
| JP7172994B2 (en) | Impurity diffusion composition, method for producing semiconductor device using same, and method for producing solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141029 |