CN110233617B - AND logic gate and NAND logic gate based on magnetic sigecum - Google Patents

AND logic gate and NAND logic gate based on magnetic sigecum Download PDF

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CN110233617B
CN110233617B CN201910419000.8A CN201910419000A CN110233617B CN 110233617 B CN110233617 B CN 110233617B CN 201910419000 A CN201910419000 A CN 201910419000A CN 110233617 B CN110233617 B CN 110233617B
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track
magnetic
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ferromagnetic layer
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CN110233617A (en
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晋芳
饶恒畅
赵植
董凯锋
宋俊磊
莫文琴
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China University of Geosciences
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China University of Geosciences
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits

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Abstract

The invention discloses an AND logic gate and an NAND logic gate based on magnetic siganmin.

Description

AND logic gate and NAND logic gate based on magnetic sigecum
Technical Field
The present invention relates to the field of logic devices, and more particularly to a magnetic sigecures-based and logic gate and nand logic gate.
Background
The and logic gate and the nand logic gate belong to a common device in a logic device, and are an indispensable component in a digital circuit, the conventional logic device is generally prepared by a CMOS process, and with the improvement of the integration level of the device, the defects of the semiconductor technology are gradually exposed: on one hand, the leakage current of the transistor is continuously increased along with the reduction of the size, and the power consumption of the device is gradually increased; on the other hand, transistor circuits are gradually approaching to the performance limit, and it becomes very difficult to continue to improve the integration level.
The magnetic siganmin is a magnetic structure with topological protection characteristics in magnetic materials, and has the advantages of being unique as an information storage medium of a high-integration device due to the characteristics of nanometer size (the diameter is only a few nanometers at minimum), topological protection (good stability) and the like, so that the magnetic siganmin can be applied to memories and logic devices. The magnetic skysave logic devices proposed at present are all of a straight racetrack structure, and the logic function is realized by driving the skysave generated at the input end to move to the output end, so that the skysave is retained in the device after the operation of the device, and the secondary use of the device is further influenced. Therefore, a reusable design scheme for the sgmm sub-logic device is needed.
Related studies have shown that the movement of magnetic skulls can be achieved by voltage controlled magnetic anisotropy energy gradient changes of the magnetic material (Wang X et al, effective scattering transport modulated by magnetic controlled magnetic resonance gradient), and that Magnetic Tunnel Junctions (MTJs) can be used to read the state of skulls (Jaffr's, H, et al, Angular dependence of the longitudinal magnetic scattering transport-metal-based junctions). The technical means are proved by experiments and theories and adopted by the invention.
Disclosure of Invention
The invention aims to solve the technical problem that a magnetic siganus and logic gate and a NAND logic gate which are based on a magnetic siganus structure are provided, and the magnetic siganus and logic gate and the NAND logic gate which are based on the magnetic siganus are in a straight track structure, the structure realizes a logic function by driving the siganus generated at an input end to move to an output end, and the structure can cause the siganus to be retained in a device after operation of the device and further influence the secondary use of the device.
The invention solves the technical problem, the adopted magnetic skybird-based AND logic gate adopts an annular magnetic track structure, the annular magnetic track structure is an annular structure formed by sequentially connecting a 1 st track to a 4 th track, the 1 st track and the 3 rd track are straight tracks, the 2 nd track and the 4 th track are bent tracks, each track is a wedge-shaped structure with one thick end and one thin end, and the joint of any two wedge-shaped structures is that the thick end of one wedge-shaped structure is connected with the thin end of the other wedge-shaped structure;
each track section comprises an electrode layer, a dielectric layer and a first ferromagnetic layer which are sequentially arranged, namely 4 electrode layers, 4 dielectric layers and 4 first ferromagnetic layers; the 4 sections of the first ferromagnetic layers are integrally formed, the 4 sections of the electrode layers and the 4 sections of the dielectric layers are both 4 sections of independent structures, and the thicknesses of any two adjacent dielectric layers are different, so that any two adjacent electrode layers are not in contact with each other, and insulation is guaranteed; the magnetic skyblue sodium is initially solidified on the No. 1 track or the No. 3 track;
a magnetic tunnel junction is disposed on the first ferromagnetic layer of the 3 rd racetrack, the magnetic tunnel junction comprising, in order: a first ferromagnetic layer, an insulating layer and a second ferromagnetic layer, where the magnetic tunnel junction is located, the insulating layer is located on the opposite surface of the contact surface of the first ferromagnetic layer where the magnetic tunnel junction is located, the magnetization direction of the second ferromagnetic layer is the same as the magnetization direction of one ferromagnetic layer, the contact surface is the surface where the first ferromagnetic layer where the magnetic tunnel junction is located contacts the dielectric layer,
two signal INPUT ends INPUT B and INPUT A of an AND logic gate are led out from the electrode layers of the 1 st track and the 2 nd track, a clock signal INPUT end is led out from the electrode layer of the 3 rd track, a high level INPUT end is led out from the electrode layer of the 4 th track, and an output end is led out from the second ferromagnetic layer.
Further, in the magnetic siganmin-based and logic gate of the present invention, the 1 st track and the 3 rd track have the same length, and the 2 nd track and the 4 th track are semicircular rings having the same radius.
Further, in the magnetic skyrmion-based and logic gate of the present invention, the thicknesses of the 4-segment electrode layers are the same, and the thickness of the first ferromagnetic layer is uniform.
Further, in the magnetic sigramic-based and logic gate of the present invention, the thickness inconsistency of any two adjacent dielectric layers is realized by the following way: by using different materials for the dielectric layers of different segments.
Further, in the magnetic sigramic-based and logic gate of the present invention, the process of and logic operation of the and logic gate is as follows: :
when INPUT A INPUTs '0' and INPUT B INPUTs '0', both the 1 st track and the 2 nd track have no magnetic anisotropy performance gradient, which can cause the skyblack to stay in the 4 th track finally, and as the skyblack stays in the 4 th track finally and the skyblack can not be detected by the magnetic tunnel junction 5 of the 3 rd track, the INPUT of A: '0' B: '0' corresponds to the output of '0';
when INPUT A INPUTs '1' and INPUT B INPUTs '0', the 1 st track has no magnetic anisotropy energy gradient, the 2 nd track has magnetic anisotropy energy gradient, and finally the siganmin still stops moving on the 4 th track, because the siganmin is finally detained on the 4 th track, and the magnetic tunnel junction 5 of the 3 rd track can not detect the siganmin, the INPUT of A: '1' B: '0' corresponds to the output of '0';
when INPUT A INPUTs '0' and INPUT B INPUTs '1', the 1 st track has magnetic anisotropic energy gradient, the 2 nd track has no magnetic anisotropic energy gradient, because the magnetic anisotropic energy of the 1 st track is smaller than that of the 4 th track, the skybutting seed will move from the 4 th track to the 1 st track when the skybutting seed is yes, and finally the skybutting seed will stay on the 1 st track, because the skybutting seed finally stays on the 1 st track, the skybutting seed can not be detected by the magnetic tunnel junction 5 of the 3 rd track, so the '1' INPUT of A: '0' B corresponds to the '0' output;
when the INPUT a INPUTs "1" and the INPUT B INPUTs "1", the 1 st track and the 2 nd track both have magnetic anisotropy gradients, and the magnetic anisotropy performance of the track gradually decreases from the 1 st track to the 2 nd track, so that the siganus are moved along the gradient direction of the 2 nd track, after the clock signal is from "0" to "1", the magnetic anisotropy of the 2 nd track is greater than the magnetic anisotropy of the 3 rd track, and then the siganus are moved from the 2 nd track to the 3 rd track, and finally stay at the 3 rd track, and the magnetic tunnel junction 5 of the 3 rd track can detect the siganus, so that the INPUT of the a: "1" B: "1" corresponds to the output of "1".
Further, in the magnetic siganus based and logic gate of the present invention, after the and logic gate performs one operation, the siganus in the device needs to be reset to the 3 rd racetrack, and the specific operations are: and inputting high level 1 to the logic gates INPUT A and INPUT B for one clock period, and further realizing the recycling of the device in a reset mode.
The invention aims to solve the technical problem, the adopted NAND logic gate based on the magnetic skybird adopts an annular magnetic track structure, the annular magnetic track structure is an annular structure formed by sequentially connecting a 1 st track to a 4 th track, the 1 st track and the 3 rd track are straight tracks, the 2 nd track and the 4 th track are bent tracks, each track is a wedge-shaped structure with one thick end and one thin end, and the thick end of any two wedge-shaped structures is connected with the thin end of the other wedge-shaped structure;
each track section comprises an electrode layer, a dielectric layer and a first ferromagnetic layer which are sequentially arranged, namely 4 electrode layers, 4 dielectric layers and 4 first ferromagnetic layers; the 4 sections of the first ferromagnetic layers are integrally formed, the 4 sections of the electrode layers and the 4 sections of the dielectric layers are both 4 sections of independent structures, and the thicknesses of any two adjacent dielectric layers are different, so that any two adjacent electrode layers are not in contact with each other, and insulation is guaranteed; the magnetic skyblue sodium is initially solidified on the No. 1 track or the No. 3 track;
a magnetic tunnel junction is disposed on the first ferromagnetic layer of the 3 rd racetrack, the magnetic tunnel junction comprising, in order: a first ferromagnetic layer, an insulating layer and a second ferromagnetic layer, where the magnetic tunnel junction is located, the insulating layer is located on the opposite surface of the contact surface of the first ferromagnetic layer where the magnetic tunnel junction is located, the magnetization direction of the second ferromagnetic layer is opposite to the magnetization direction of one ferromagnetic layer, the contact surface is the surface where the first ferromagnetic layer where the magnetic tunnel junction is located contacts the dielectric layer,
two signal INPUT ends INPUT B and INPUT A of an AND logic gate are led out from the electrode layers of the 1 st track and the 2 nd track, a clock signal INPUT end is led out from the electrode layer of the 3 rd track, a high level INPUT end is led out from the electrode layer of the 4 th track, and an output end is led out from the second ferromagnetic layer.
Further, in the nand logic gate based on the magnetic siganmin of the present invention, the length of the 1 st track and the 3 rd track is the same, and the 2 nd track and the 4 th track are semicircular rings with the same radius; the thicknesses of the 4 sections of electrode layers are consistent, and the thicknesses of the first ferromagnetic layers are uniform; the thickness inconsistency of any two adjacent dielectric layers is realized by the following steps: by using different materials for the dielectric layers of different segments.
Further, in the nand logic gate based on the magnetic siganmin of the present invention, the nand logic gate implements the nand logic operation as follows: :
when INPUT A INPUTs '0' and INPUT B INPUTs '0', both the 1 st track and the 2 nd track have no magnetic anisotropy performance gradient, which can cause the skyblack to stay in the 4 th track finally, and as the skyblack stays in the 4 th track finally and the skyblack can not be detected by the magnetic tunnel junction 5 of the 3 rd track, the INPUT of A: '0' B: '0' corresponds to the output of '1';
when INPUT A INPUTs '1' and INPUT B INPUTs '0', the 1 st track has no magnetic anisotropy energy gradient, the 2 nd track has magnetic anisotropy energy gradient, and finally the siganmin still stops moving on the 4 th track, because the siganmin is finally detained on the 4 th track, and the magnetic tunnel junction 5 of the 3 rd track can not detect the siganmin, the INPUT of A: '1' B: '0' corresponds to the output of '1';
when INPUT A INPUTs '0' and INPUT B INPUTs '1', the 1 st track has magnetic anisotropic energy gradient, the 2 nd track has no magnetic anisotropic energy gradient, because the magnetic anisotropic energy of the 1 st track is smaller than that of the 4 th track, the skybutting seed will move from the 4 th track to the 1 st track when the skybutting seed is yes, and finally the skybutting seed will stay on the 1 st track, because the skybutting seed finally stays on the 1 st track, the skybutting seed can not be detected by the magnetic tunnel junction 5 of the 3 rd track, so the A: '0' B '1' INPUT corresponds to the '1' output;
when the INPUT a INPUTs "1" and the INPUT B INPUTs "1", the 1 st track and the 2 nd track both have magnetic anisotropy gradients, and the magnetic anisotropy performance of the track gradually decreases from the 1 st track to the 2 nd track, so that the siganus are moved along the gradient direction of the 2 nd track, after the clock signal is from "0" to "1", the magnetic anisotropy of the 2 nd track is greater than the magnetic anisotropy of the 3 rd track, and then the siganus are moved from the 2 nd track to the 3 rd track, and finally stay at the 3 rd track, and the magnetic tunnel junction 5 of the 3 rd track can detect the siganus, so that the INPUT of the a: "1" B: "1" corresponds to the output of "0".
Further, in the nand logic gate based on the magnetic siganus, after the nand logic gate performs one operation, the siganus in the device needs to be reset to the 3 rd racetrack, and the nand logic gate is specifically operated as follows: and inputting high level 1 to the logic gates INPUT A and INPUT B for one clock period, and further realizing the recycling of the device in a reset mode.
The JK trigger with the annular magnetic racetrack structure based on the magnetic skyscraper has the following technical effects: the magnetic siganmin is placed in the annular magnetic racetrack, the siganmin circularly moves in the magnetic racetrack in a voltage driving mode, and the state of the siganmin in the magnetic racetrack is read through the magnetic tunnel junction, so that the logic functions of an AND gate and an NAND gate are realized, and the stability of the siganmin-based AND gate and the NAND gate during use is guaranteed.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a schematic view of a circular magnetic racetrack structure;
FIG. 2 is a schematic view of a straight racetrack structure;
FIG. 3 is a schematic view of a curved racetrack structure;
fig. 4 is a logic gate wiring schematic.
Detailed Description
For a more clear understanding of the technical features, objects and effects of the present invention, embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
The solution of the present invention to the above problems is as follows:
fig. 1 is a schematic view of the structure of the annular magnetic racetrack used in this patent: the whole annular racetrack can be divided into four segments in total, wherein 1 and 3 are straight racetracks, 2 and 4 are bent racetracks, each segment of racetrack is composed of an electrode layer 6, a dielectric layer 7 and a ferromagnetic layer 8, and an MTJ (magnetic tunnel junction 5) is arranged below the straight racetrack 3, namely the ferromagnetic layer 8, an insulating layer 9 and a ferromagnetic layer 10 jointly form the MTJ for detecting the state of the siganus in the ferromagnetic layer 8. In a preferred embodiment of the present invention, the track 1 and the track 3 have the same length, and the track 2 and the track 4 are semicircular rings having the same radius.
Fig. 2 is a schematic diagram of a straight racetrack structure adopted in this patent, i.e. fig. 1 and 3, the whole structure is a wedge-shaped structure and is divided into three layers, namely an electrode layer 6, a dielectric layer 7 and a ferromagnetic layer 8. Fig. 3 is a schematic diagram of the structure of the curved racetrack adopted in this patent, the curved racetrack is 2 and 4 in the first figure, and the whole structure is a curved wedge-shaped structure and is divided into three layers, namely an electrode layer 6, a dielectric layer 7 and a ferromagnetic layer 8. In a preferred embodiment of the present invention, the thickness of the 4-segment electrode layer 6 is uniform, and the thickness of the ferromagnetic layer 8 is uniform.
The joint of any two wedge structures is formed by connecting the thick end of one wedge structure with the thin end of the other wedge structure. The 4 sections of first ferromagnetic layers are integrally formed, the 4 sections of electrode layers 6 and the 4 sections of dielectric layers 7 are both 4 sections of independent structures, and the thicknesses of any two adjacent dielectric layers 7 are different, so that any two adjacent electrode layers 6 are not in contact with each other, and insulation is guaranteed. In a preferred embodiment of the present invention, the thickness of any two adjacent dielectric layers 7 is different by: by using different materials for the different sections of the dielectric layer 7.
No matter the track is a straight track or a bent track, the ferromagnetic layer 8 of the track is connected with the ground wire, the electrode layer 6 of each track section is connected with a voltage signal through mutually independent wires to drive the skullet to move in the ferromagnetic layer 8, and due to the influence of the wedge-shaped structure, when a potential difference exists between the electrode layer 6 and the ferromagnetic layer 8, the magnetic anisotropy of the ferromagnetic layer 8 changes in a gradient manner, and then the skullet is driven to move in the ferromagnetic layer 8. It is specified that the siganus will move in the track when the input level is high level "1", the siganus will be stationary in the track when the input level is low level "0", the specific voltage magnitude referred to by high level "1" depends on the parameters of the magnetic material and the structure of the entire track, and the specific voltage magnitude referred to by low level "0" is generally considered to be a voltage of 0 volt or very low.
Fig. 4 is a schematic diagram of logic gate wiring, level signals generated during logic gate operation are introduced from four sections of racetracks by mutually independent wires, two signal INPUT terminals INPUT B and INPUT a of the logic gate are led out from the electrode layers of the 1 st racetrack and the 2 nd racetrack, a clock signal INPUT terminal is led out from the electrode layer of the 3 rd racetrack, a high level INPUT terminal is led out from the electrode layer of the 4 th racetrack so as to INPUT a high level "1", and an output terminal is led out from the second ferromagnetic layer. The magnetic tunnel junction 5 is used as an output end to output the level signal after operation, and the logic gate realizes the logic operation process as follows:
to implement and logic, the magnetization direction of the reference layer 10 (i.e., the ferromagnetic layer 10) of the magnetic tunnel junction 5 is first fixed to face the layer of the vertical ferromagnetic layer 8 toward the dielectric layer 7 (which is the same as the magnetization direction of the ferromagnetic layer 8), i.e., the layer of the vertical ferromagnetic layer 8 is facing upward in fig. 1, so that a high level "1" indicates that skyburn is in the 3 rd race track, and a low level "0" indicates that skyburn is not in the 3 rd race track. The single skybutting is solidified in the 3 rd race track in advance, since the 3 rd race track is controlled by the clock signal (CLK), when the clock signal is '1' (high level), the 3 rd race track will generate a magnetic anisotropic performance gradient to drive the skybutting to move to a position close to the 4 th race track, when the clock signal is from '1' to '0' (falling edge), the magnetic anisotropic performance of the 3 rd race track will be greater than that of the 4 th race track, and the skutting will move from the 3 rd race track to the 4 th race track. Since the 4 th track is switched on "1" (high), the siganmin will move along the 4 th track all the way to a position close to the 1 st track. The following discussion will be made based on the four states of the input terminals (A: "0" B: "0"; A: "1" B: "0"; A: "0" B: "1"; A: "1" B: "1"):
when the input end A is 0, B is 0, the 1 st track and the 2 nd track have no magnetic anisotropy performance gradient, and the skynman finally stays at the 4 th track. As the siganmin is finally stayed in the 4 th race track, and the magnetic tunnel junction 5 of the 3 rd race track cannot detect the siganmin, the input of A to 0 and B to 0 corresponds to the output of 0;
when the input end A is 1, B is 0, the 1 st track has no magnetic anisotropy energy gradient, the 2 nd track has magnetic anisotropy energy gradient, and finally the siganmin still stops moving on the 4 th track. As the siganmin is finally stayed in the 4 th race track, and the magnetic tunnel junction 5 of the 3 rd race track cannot detect the siganmin, the input of A to 1 and B to 0 corresponds to the output of 0;
when the input end A is 0, B is 1, the 1 st track has magnetic anisotropy energy gradient, the 2 nd track has no magnetic anisotropy gradient, and because the magnetic anisotropy energy of the 1 st track is smaller than that of the 4 th track, the skybutton will move from the 4 th track to the 1 st track, and finally the skybutton will stay on the 1 st track. As the siganmin is finally stayed in the 1 st track, and the magnetic tunnel junction 5 of the 3 rd track can not detect the siganmin, the input of A to be 0 and the input of B to be 1 corresponds to the output of 0;
when the input end A is '1' B is '1', both the 1 st track and the 2 nd track have magnetic anisotropy gradients, and the magnetic anisotropy performance of the skybird track gradually decreases from the 1 st track to the 2 nd track, so that the skybird moves the 2 nd track along the gradient direction, after the clock signal is waited from '0' to '1' (rising edge), the magnetic anisotropy of the 2 nd track is larger than the magnetic anisotropy of the 3 rd track, and then the skybird moves from the 2 nd track to the 3 rd track, and finally stays at the 3 rd track, and the magnetic tunnel junction 5 of the 3 rd track can detect the skybird, so that the input of the A '1' B '1' corresponds to the output of '1'.
On the basis of implementing the and gate logic, if the nand gate logic is to be implemented, it is only necessary to fix the magnetization direction of the reference layer 10 of the magnetic tunnel junction 5 (i.e., the ferromagnetic layer 10) to the layer surface perpendicular to the ferromagnetic layer 8 and back to the dielectric layer 7 (180 ° from the magnetization direction of the ferromagnetic layer 8), i.e., the layer surface perpendicular to the ferromagnetic layer 8 is downward in fig. 1, so that a high level "1" indicates that the siganus is not in the 3 rd race track, and a low level "0" indicates that the siganus is in the 3 rd race track.
Preferably, after such a device performs an operation, the skynman in the device needs to be reset to the 3 rd racetrack, and the operation is: and inputting high level 1 to the logic gates INPUT A and INPUT B for one clock period, and further realizing the recycling of the device in a reset mode.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (8)

1. A magnetic Scurrio based AND logic gate is characterized in that an annular magnetic track structure is adopted, the annular magnetic track structure is an annular structure formed by sequentially connecting a 1 st track to a 4 th track, the 1 st track and the 3 rd track are straight tracks, the 2 nd track and the 4 th track are bent tracks, each track section is a wedge-shaped structure with one thick end and one thin end, and the joint of any two wedge-shaped structures is formed by connecting the thick end of one wedge-shaped structure with the thin end of the other wedge-shaped structure;
each track section comprises an electrode layer, a dielectric layer and a first ferromagnetic layer which are sequentially arranged, namely 4 electrode layers, 4 dielectric layers and 4 first ferromagnetic layers; the 4 sections of the first ferromagnetic layers are integrally formed, the 4 sections of the electrode layers and the 4 sections of the dielectric layers are both 4 sections of independent structures, and the thicknesses of any two adjacent dielectric layers are different, so that any two adjacent electrode layers are not in contact with each other, and insulation is guaranteed; the magnetic skyblue glauberculus is initially solidified on the No. 3 racetrack;
a magnetic tunnel junction is disposed on the first ferromagnetic layer of the 3 rd racetrack, the magnetic tunnel junction comprising, in order: a first ferromagnetic layer, an insulating layer and a second ferromagnetic layer, where the magnetic tunnel junction is located, the insulating layer is located on the opposite surface of the contact surface of the first ferromagnetic layer where the magnetic tunnel junction is located, the magnetization direction of the second ferromagnetic layer is the same as the magnetization direction of one ferromagnetic layer, the contact surface is the surface where the first ferromagnetic layer where the magnetic tunnel junction is located contacts the dielectric layer,
two signal INPUT ends INPUT B and INPUT A of an AND logic gate are led out from the electrode layers of the 1 st track and the 2 nd track, a clock signal INPUT end is led out from the electrode layer of the 3 rd track, a high level INPUT end is led out from the electrode layer of the 4 th track, and an output end is led out from the second ferromagnetic layer;
after the and logic gate performs one operation, the magnetic skyburn in the device needs to be reset to the 3 rd race track, and the specific operations are as follows: and inputting high level 1 to the logic gates INPUT A and INPUT B for one clock period, and further realizing the recycling of the device in a reset mode.
2. The magnetic sigramole-based and logic gate of claim 1, wherein the 1 st track and the 3 rd track are the same length, and the 2 nd track and the 4 th track are semi-circular rings with the same radius.
3. The magnetic segmentum-based and logic gate according to claim 1, characterized in that the thickness of the 4-segment electrode layer is uniform and the thickness of the first ferromagnetic layer is uniform.
4. The magnetic skutter-based and logic gate of claim 3, wherein the disparity in thickness between any two adjacent dielectric layers is achieved by: by using different materials for the dielectric layers of different segments.
5. The magnetic skutter-based AND logic gate of claim 1,
the magnetization direction of the second ferromagnetic layer of the magnetic tunnel junction is fixed to be perpendicular to the layer surface of the first ferromagnetic layer and faces the dielectric layer, the magnetization direction of the second ferromagnetic layer is the same as that of the first ferromagnetic layer, a single magnetic skybromon is solidified in the 3 rd race track in advance, because the 3 rd race track is controlled by a clock signal CLK, when the clock signal is '1', the 3 rd race track generates a magnetic anisotropic performance gradient to drive the magnetic skromon to move to a position close to the 4 th race track, when the clock signal is arranged from '1' to '0', the magnetic anisotropic performance of the 3 rd race track is larger than that of the 4 th race track, and the magnetic skromon moves from the 3 rd race track to the 4 th race track;
the and logic gate implements the and logic operation as follows:
when INPUT A INPUTs '0' and INPUT B INPUTs '0', both the 1 st track and the 2 nd track have no magnetic anisotropy performance gradient, which can cause the skybillon to stay in the 4 th track finally, and as the skybillon stays in the 4 th track finally and the skybillon can not be detected by the magnetic tunnel junction of the 3 rd track, the INPUT of A: '0' B: '0' corresponds to the output of '0';
when INPUT A INPUTs '1' and INPUT B INPUTs '0', the 1 st track has no magnetic anisotropy energy gradient, the 2 nd track has magnetic anisotropy energy gradient, and finally the siganmin still stops moving on the 4 th track, because the siganmin is finally detained on the 4 th track, and the magnetic tunnel junction of the 3 rd track can not detect the siganmin, the INPUT of A: '1' B: '0' corresponds to the output of '0';
when INPUT A INPUTs '0' and INPUT B INPUTs '1', the 1 st track has magnetic anisotropic energy gradient, the 2 nd track has no magnetic anisotropic energy gradient, because the magnetic anisotropic energy of the 1 st track is smaller than that of the 4 th track, the skybutting seeds move from the 4 th track to the 1 st track when being, and finally the skybutting seeds stay on the 1 st track, because the skybutting seeds stay on the 1 st track finally, and the skybutting seeds can not be detected by the magnetic tunnel junction of the 3 rd track, the INPUT of A: '0' B: '1' corresponds to the output of '0';
when the INPUT A INPUTs '1' and the INPUT B INPUTs '1', both the 1 st track and the 2 nd track have magnetic anisotropy gradients, and the magnetic anisotropy performance of the track gradually decreases from the 1 st track to the 2 nd track, so that the skybird moves along the gradient direction of the 2 nd track, after the clock signal is from '0' to '1', the magnetic anisotropy of the 2 nd track is larger than that of the 3 rd track, and then the skybird moves from the 2 nd track to the 3 rd track, and finally stays at the 3 rd track, and the magnetic tunnel junction of the 3 rd track can detect the skybird, so that the INPUT of the A: '1' B: '1' corresponds to the output of the '1'.
6. A NAND logic gate based on magnetic Scomb is characterized in that an annular magnetic track structure is adopted, the annular magnetic track structure is an annular structure formed by sequentially connecting a 1 st track to a 4 th track, the 1 st track and the 3 rd track are straight tracks, the 2 nd track and the 4 th track are bent tracks, each track section is a wedge-shaped structure with one thick end and one thin end, and the joint of any two wedge-shaped structures is formed by connecting the thick end of one wedge-shaped structure with the thin end of the other wedge-shaped structure;
each track section comprises an electrode layer, a dielectric layer and a first ferromagnetic layer which are sequentially arranged, namely 4 electrode layers, 4 dielectric layers and 4 first ferromagnetic layers; the 4 sections of the first ferromagnetic layers are integrally formed, the 4 sections of the electrode layers and the 4 sections of the dielectric layers are both 4 sections of independent structures, and the thicknesses of any two adjacent dielectric layers are different, so that any two adjacent electrode layers are not in contact with each other, and insulation is guaranteed; the magnetic skyblue glauberculus is initially solidified on the No. 3 racetrack;
a magnetic tunnel junction is disposed on the first ferromagnetic layer of the 3 rd racetrack, the magnetic tunnel junction comprising, in order: a first ferromagnetic layer, an insulating layer and a second ferromagnetic layer, where the magnetic tunnel junction is located, the insulating layer is located on the opposite surface of the contact surface of the first ferromagnetic layer where the magnetic tunnel junction is located, the magnetization direction of the second ferromagnetic layer is opposite to the magnetization direction of one ferromagnetic layer, the contact surface is the surface where the first ferromagnetic layer where the magnetic tunnel junction is located contacts the dielectric layer,
two signal INPUT ends INPUT B and INPUT A of an AND logic gate are led out from the electrode layers of the 1 st track and the 2 nd track, a clock signal INPUT end is led out from the electrode layer of the 3 rd track, a high level INPUT end is led out from the electrode layer of the 4 th track, and an output end is led out from the second ferromagnetic layer;
after the nand logic gate performs one operation, the skynting in the device needs to be reset to the 3 rd race track, and the specific operations are as follows: and inputting high level 1 to the logic gates INPUT A and INPUT B for one clock period, and further realizing the recycling of the device in a reset mode.
7. The magnetic sigramole-based nand logic gate of claim 6, wherein the 1 st track and the 3 rd track are the same length, and the 2 nd track and the 4 th track are semicircular rings with the same radius; the thicknesses of the 4 sections of electrode layers are consistent, and the thicknesses of the first ferromagnetic layers are uniform; the thickness inconsistency of any two adjacent dielectric layers is realized by the following steps: by using different materials for the dielectric layers of different segments.
8. The magnetic skutter-based NAND logic gate of claim 6, wherein,
the magnetization direction of the second ferromagnetic layer of the magnetic tunnel junction is fixed to be perpendicular to the layer surface of the first ferromagnetic layer and faces the dielectric layer, the magnetization direction of the second ferromagnetic layer is the same as that of the first ferromagnetic layer, a single magnetic skybromon is solidified in the 3 rd race track in advance, because the 3 rd race track is controlled by a clock signal CLK, when the clock signal is '1', the 3 rd race track generates a magnetic anisotropic performance gradient to drive the magnetic skromon to move to a position close to the 4 th race track, when the clock signal is arranged from '1' to '0', the magnetic anisotropic performance of the 3 rd race track is larger than that of the 4 th race track, and the magnetic skromon moves from the 3 rd race track to the 4 th race track;
the nand logic gate implements the nand logic operation as follows:
when INPUT A INPUTs '0' and INPUT B INPUTs '0', both the 1 st track and the 2 nd track have no magnetic anisotropy performance gradient, which can cause the skybillon to stay in the 4 th track finally, and as the skybillon stays in the 4 th track finally and the skybillon can not be detected by the magnetic tunnel junction of the 3 rd track, the INPUT of A: '0' B: '0' corresponds to the output of '1';
when INPUT A INPUTs '1' and INPUT B INPUTs '0', the 1 st track has no magnetic anisotropy energy gradient, the 2 nd track has magnetic anisotropy energy gradient, and finally the siganmin still stops moving on the 4 th track, because the siganmin is finally detained on the 4 th track and the magnetic tunnel junction of the 3 rd track cannot detect the siganmin, the INPUT of A: '1' B: '0' corresponds to the output of '1';
when INPUT A INPUTs '0' and INPUT B INPUTs '1', the 1 st track has magnetic anisotropic energy gradient, the 2 nd track has no magnetic anisotropic energy gradient, because the magnetic anisotropic energy of the 1 st track is smaller than that of the 4 th track, the skybutting seeds move from the 4 th track to the 1 st track when being, and finally the skybutting seeds stay on the 1 st track, because the skybutting seeds stay on the 1 st track finally, and the skybutting seeds can not be detected by the magnetic tunnel junction of the 3 rd track, the INPUT of A: '0' B: '1' corresponds to the output of '1';
when the INPUT A INPUTs '1' and the INPUT B INPUTs '1', both the 1 st track and the 2 nd track have magnetic anisotropy gradients, and the magnetic anisotropy performance of the track gradually decreases from the 1 st track to the 2 nd track, so that the skybird moves along the gradient direction of the 2 nd track, after the clock signal goes from '0' to '1', the magnetic anisotropy of the 2 nd track is larger than the magnetic anisotropy of the 3 rd track, and then the skybird moves from the 2 nd track to the 3 rd track, and finally stays at the 3 rd track, and the magnetic tunnel junction of the 3 rd track can detect the skybird, so that the INPUT of the A: '1' B: '1' corresponds to the output of '0'.
CN201910419000.8A 2019-05-20 2019-05-20 AND logic gate and NAND logic gate based on magnetic sigecum Expired - Fee Related CN110233617B (en)

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