CN111768806B - Magnetic skynet based memory device and method for storing information by using same - Google Patents
Magnetic skynet based memory device and method for storing information by using same Download PDFInfo
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- CN111768806B CN111768806B CN202010535862.XA CN202010535862A CN111768806B CN 111768806 B CN111768806 B CN 111768806B CN 202010535862 A CN202010535862 A CN 202010535862A CN 111768806 B CN111768806 B CN 111768806B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
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Abstract
The invention relates to a magnetic siganmin-based storage device and an information storage method thereof, which can realize the functions of multiple copying, multi-bit storage and information screening of information. The memory device includes: the track comprises a first section, a second section, a third section and a fourth section, wherein one end of the first section is connected with one end of the second section, the other end of the second section is connected with one end of the third section and one end of the fourth section, and defects are formed on the surface of the second section of the material; the writing end is arranged at the other end of the first section and is used for writing magnetic siganmin; the first reading end is arranged at the other end of the third section and is used for reading the magnetic skybird entering the third section; and the second reading end is arranged at the other end of the third section and is used for reading the magnetic skybird entering the fourth section.
Description
Technical Field
The present invention relates to a memory device, and more particularly, to a magnetic sggmelin-based memory device and a method for storing information in the magnetic sgelin-based memory device.
Background
With the advent of the information age, in order to meet the demand, there are also demands for information storage devices that are rapidly developed in terms of high density, high speed, low power consumption, and the like. And the traditional model hard disk structure includes: the disk, the magnetic head, the main shaft and the transmission shaft, etc. and the data are stored in the disk. The writing and reading of data depend on a series of operations such as mechanical movement, namely, the magnetic head reads and writes the disk below the magnetic head, and the like, and have obvious defects such as large size and the like.
Disclosure of Invention
Based on this, it is necessary to provide a new storage device for the above-mentioned disadvantages of the conventional machine type hard disk structure.
In order to achieve the above object, the present invention provides a magnetic segmentum-based memory device and also relates to a method of storing information in a magnetic segmentum-based memory device.
A magnetic sigreasons-based memory device, comprising: the track comprises a first section, a second section, a third section and a fourth section;
one end of the first section is connected with one end of the second section, and the other end of the second section is connected with one end of the third section and one end of the fourth section;
forming a defect on a surface of the second length of material;
the width of the second section is larger than that of the first section, and the width direction is a direction perpendicular to a motion path of the magnetic skynerger in the first section and the second section under the drive current;
the writing end is arranged at the other end of the first section and is used for writing magnetic siganmin;
the first reading end is arranged at the other end of the third section and is used for reading the magnetic skybird entering the third section;
and the second reading end is arranged at the other end of the third section and is used for reading the magnetic skybird entering the fourth section.
In one embodiment, the magnetic skutter-based memory device further comprises a substrate, the racetrack being disposed on the substrate.
In one embodiment, the ratio of the width of the second section to the width of the first section is no greater than 3.
In one embodiment, the second segment is for causing the pinned magnetic skullet to be split into two magnetic skullets by the drive current moving from the first segment to the second segment.
In another aspect, the present invention further provides a method for storing information in a magnetic skutter-based memory device, where the memory device is the magnetic skutter-based memory device according to any one of the foregoing embodiments, the method including:
injecting a polarization current at the write end to write a magnetic skyrmion;
applying a drive current on the racetrack so that the magnetic skyrmion written by the writing end moves from a first segment to a second segment to be pinned at the second segment and is split into two magnetic skyrmions by the drive current;
one of the two magnetic segmentors after the splitting moves to the third section, and the other moves to the fourth section;
and reading information from the first reading end and the second reading end.
In one embodiment, the method of storing information further comprises the step of applying an erase current to erase the magnetic skulls in the third segment.
In one embodiment, the method of storing information further comprises the step of applying an erase current to erase the magnetic skulls in the fourth segment.
In yet another aspect, the present invention further provides a magnetic siganmin-based memory device, comprising:
a first-stage racetrack comprising a first segment and a second segment, wherein one end of the first segment is connected with one end of the second segment, a defect is formed on the surface of the material of the second segment, the width of the second segment is larger than that of the first segment, the width direction is a direction vertical to a moving path of the magnetic siggerins in the first segment and the second segment under the driving current, and the second segment is used for enabling the magnetic siggerins which are pinned by moving from the first segment to the second segment to be split into two magnetic siggerins by the driving current;
the second-stage track comprises a first track, a second track, a third section, a fourth section, a fifth section, a sixth section, a seventh section and an eighth section;
one end of the first track and one end of the second track are connected with the other end of the second section, the other end of the first track is connected with one end of the third section, and the other end of the second track is connected with one end of the fourth section;
forming defects on the surfaces of the third and fourth sections of material;
the first track is used for converting one of the two split magnetic segmentons into a magnetic domain wall, and the second track is used for converting the other of the two split magnetic segmentons into a magnetic domain wall;
the third segment is used for reducing the magnetic domain wall from the first track into magnetic sGermin and splitting the magnetic domain wall into two magnetic sGermin by the driving current, one of the two magnetic sGermin enters the fifth segment, and the other enters the sixth segment, the fourth segment is used for reducing the magnetic domain wall from the second track into magnetic sGermin and splitting the magnetic sGermin into two magnetic sGermin by the driving current, one of the two magnetic sGermin enters the seventh segment, and the other enters the eighth segment;
the writing end is arranged at the other end of the first section and is used for writing magnetic siganmin;
the first reading end is arranged at the other end of the fifth section and used for reading the magnetic skybutton entering the fifth section;
the second reading end is arranged at the other end of the sixth section and is used for reading the magnetic skyblue sodium entering the sixth section;
the third reading end is arranged at the other end of the seventh segment and used for reading the magnetic skybutton entering the seventh segment;
and the fourth reading end is arranged at the other end of the eighth section and is used for reading the magnetic skybird entering the eighth section.
In one embodiment, the ratio of the width of the second section to the width of the first section is no greater than 3.
In addition, the invention also provides a method for storing information by the magnetic skynet-based storage device, which comprises the following steps:
injecting a polarization current at the write end to write a magnetic skyrmion;
applying a drive current on the racetrack so that the magnetic skyrmion written by the writing end moves from a first segment to a second segment to be pinned at the second segment and is split into two magnetic skyrmions by the drive current;
one of the two split magnetic segmentons is converted into a magnetic domain wall to move to the first track, and the other one of the two split magnetic segmentons is converted into a magnetic domain wall to move to the second track;
the domain wall from the first track reverts to magnetic segmentons in a third segment and is split into two magnetic segmentons by the drive current and one enters the fifth segment and the other enters the sixth segment, the domain wall from the second track reverts to magnetic segmentons in a fourth track and is split into two magnetic segmentons by the drive current and one enters the seventh segment and the other enters the eighth segment;
and reading information from the first reading end, the second reading end, the third reading section and the fourth reading end.
According to the magnetic skybromone-based memory device and the information storage method of the device, the defects formed on the surface of the second section of track material are utilized, the magnetic skybromone enters the second section of track from the first section of track to generate the pinning effect, the pinned magnetic skybromone is split into two independent magnetic skymons under the driving current and enters the first reading end and the second reading end, and the multi-bit storage of information in the storage areas corresponding to the first reading end and the second reading end respectively is realized.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a magnetic skyburn-based information storage device in accordance with an embodiment of the present invention;
FIG. 2 is a flow chart of a method of storing information in a magnetic Scotch-based memory device in accordance with an embodiment of the present invention;
FIG. 3a is a schematic diagram of the injection of a write side polarization current into magnetic skyrmion in an embodiment of the present invention;
FIG. 3b is a schematic view of a magnetic skyburn being stretched from a first section of a racetrack into a second section of the racetrack in accordance with an embodiment of the present invention;
FIG. 3c is a diagram of two separate magnetic segregants after drive current split pinning in accordance with one embodiment of the present invention;
FIG. 3d is a schematic diagram of the split magnetic skulls entering two read ends respectively according to an embodiment of the present invention;
FIG. 4a is a diagram illustrating an embodiment of erasing magnetic skulls flowing into the first read end using a current;
FIG. 4b is a diagram illustrating an embodiment of erasing magnetic skulls flowing into the second read terminal using a current;
FIG. 5 is a schematic diagram of another magnetic skyburn-based information storage device in accordance with the present invention;
FIG. 6 is a schematic diagram of an information storage method of a magnetic skyburn-based information storage device in another embodiment.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Embodiments of the present application are set forth in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
It will be understood that, as used herein, the terms "first," "second," and the like may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, a first resistance may be referred to as a second resistance, and similarly, a second resistance may be referred to as a first resistance, without departing from the scope of the present application. The first resistance and the second resistance are both resistances, but they are not the same resistance.
It is to be understood that "connection" in the following embodiments is to be understood as "electrical connection", "communication connection", and the like if the connected circuits, modules, units, and the like have communication of electrical signals or data with each other.
As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises/comprising," "includes" or "including," or "having," and the like, specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, as used in this specification, the term "and/or" includes any and all combinations of the associated listed items.
Skyrmion (skyrmion) from the nuclear physicist tonies in england, Tony Skyrme, in the 60 s proposed a set of nonlinear field theories for describing the interactions between mesons and further predicted the existence of a particle-like stable field structure with topologically protective properties, skyrmion. In 1975, Belavin and Polyakov theoretically proposed a metastable state of a particle-like species in a two-dimensional ferromagnet, the magnetic skullet employed in the present invention.
The skyrmion is a spin structure which has quasi-particle characteristics and is protected by topology, the size of the skyrmion can be as small as nanometer, and the skyrmion has stability protected by topology; in addition, in the information storage device, the presence or absence of a sigxel may be regarded as "0" or "1" in the binary information, that is, the presence of a sigxel represents information "1", and the absence of a sigxel represents information "0", and data "1" or "0" may be written as necessary. Under the driving of the current, the siganus can be transported in the track, so that the information stored in the siganus is transferred. Due to these characteristics, siganmin is widely recognized as one of the ideal information storage units of the new generation of magnetic memory devices with high density, high speed, and low power consumption.
The information storage device based on the magnetic siganmin according to the present disclosure, as shown in fig. 1, includes a first track segment 10, a second track segment 20, a third track segment 30, a fourth track segment 40, a write terminal 11, a first read terminal 31, and a second read terminal 41.
In one embodiment, the structure of the racetrack mainly comprises a magnetic layer and a strong spin orbit coupling layer which are connected in contact with each other, wherein the magnetic layer is made of magnetic materials such as Co, CoFe or CoFeB and the like, and the magnetic layer has the function of generating and transporting magnetic skybrids; the strong spin orbit coupling layer uses a material having a large spin orbit coupling moment, and its function is to generate the DM (dzyaloshinski-Moriya) interaction required for generating and maintaining the magnetic skammomon.
A write terminal 11 at the left end of said first track segment 10 for writing a magnetic skyrmion using a polarization current; the left side of the second section 20 of the racetrack is connected with the right side of the first section 10 of the racetrack, wherein a defect is formed on the surface of the material of the second section of the racetrack, the width ratio of the second section 20 of the racetrack to the first section 10 of the racetrack is not more than 3, the width direction is a direction vertical to the moving path of the magnetic skuller under the driving current in the first section and the second section, the length can be set according to the actual situation, in one embodiment, the width of the first section 10 of the racetrack is 20nm, and the width of the second section 20 of the racetrack is 50 nm; the right side of the second segment 20 of the racetrack is connected to the left sides of the third segment 30 and the fourth segment 40 of the racetrack.
In one embodiment, the entire racetrack is provided on a substrate (not shown in FIG. 1).
Further, as shown in fig. 2, the operation principle of the method of storing information in the magnetic skullet-based information storage device is as follows:
s10, using the polarization current to generate the magnetic sigxels 50 at the write end 11 of the memory device, the magnetic sigxels 50 will move along the racetrack under the action of the driving current.
S20, the magnetic siganmin 50 enters the second section 20 of the track from the first section 10 of the track, the magnetic siganmin generates pinning effect due to the defect on the surface of the track in the second section 20 of the track, and the magnetic siganmin pinned on the track is split into two independent magnetic siganmin 51 and 52 under the action of the driving current.
S30, the two independent magnetic siggers 51 and 52 move to the third track segment 30 and the fourth track segment 40 respectively under the action of the driving current, and the magnetic siggers with the same stored information can be detected at both the reading terminals 31 and 41.
In step S10, magnetic segmentors 50 are generated at the write terminal 11 of the memory device using the polarization current, with or without segmentors being generated by the write terminal 11. Skyrmions are spin structures with topological protection, and therefore, the topological stability barrier of skyrmions needs to be overcome during their nucleation. In practical operation, the target can be achieved through various ways, including modes of an external magnetic field, a local thermal effect, spin waves, currents and the like, wherein the external magnetic field can change the overall energy of the system, so that an energy phase state in which the siganus are stably existed is obtained. However, since an external method such as a magnetic field or laser is not suitable for application of the sggmen device, the sggmen generation in the memory device based on sggmen is mainly performed by an electrical method. As shown in fig. 3a, in one embodiment, a spin-polarized current may be used to inject into the magnetic layer through a probe of a spin-polarized scanning tunneling microscope (SP-STM), flip the local magnetic moment direction, and also accurately generate or annihilate the skymons by the spin-polarized current; the generation of the segmentons above using spin-polarized current injection is only one example, although segmentons may also be generated in specific structures using domain walls or by other means.
The magnetic siganls 50 will move along the racetrack under the action of a driving current, which in one embodiment is a "clock" driving pulse of constant magnitude and duration generated in the racetrack during one clock cycle, and under the action of this driving current, the written siganls will be sequentially transmitted along the nano-racetrack, thereby forming a siganl sequence containing valid information, and completing the information transmission process.
In step S20, the magnetic sigxels 50 enter the second track segment 20 from the first track segment 10, the magnetic sigxels 50 will generate pinning effect on the second track segment 20 due to the defect on the track surface, at this time, the magnetic sigxels 50 pinned on the second track segment 20 will not move under the action of the driving current, but when the driving current is increased, the pinned magnetic sigxels will be split into two independent magnetic sigxels 51 and 52, as shown in fig. 3b-3c, in one embodiment, the magnitude of the driving current is 106～1012A/m2The specific driving current can be adjusted according to actual conditions;
in one embodiment, the magnetic ink 50 is stretched as it enters the second section 20 of the track, as shown in figure 3b, due to the width ratio of the first section 10 to the second section 20 of the track, i.e., the magnetic ink enters the wide track from the narrow track.
In step S30, the two independent magnetic sigrons 51 and 52 move to the third track segment 30 and the fourth track segment 40, respectively, under the action of the driving current, and both the reading terminals 31 and 41 can detect the magnetic sigrons with the same stored information. As shown in fig. 3d, this allows for the simultaneous storage of information in different storage paths. In one embodiment, a method for realizing the skyrmion detection by an electrical means in a Co/Ge/Fe Magnetic Tunnel Junction (MTJ), because the tunneling magnetoresistance of the MTJ depends on the direction of the magnetic moment in the free layer, when the skyrmion moves below a read head composed of the MTJ, the change of the direction of the magnetic moment causes the change of the electronic state related to the spin, so that the MTJ tunneling magnetoresistance changes, and whether the skyrmion exists in the read head region can be judged by reading the change of the resistance; the above method of detecting the presence of the sgemin using the tunneling magnetoresistance effect is merely an example, and the presence or absence thereof may be detected by using the effects of the non-collinear magnetoresistance and the anisotropic magnetoresistance of the sgemin.
Further, the generation and annihilation of the magnetic skulls can be precisely controlled by the action of the current. In one embodiment, as shown in fig. 4a, we apply a current to make the magnetic skutterer 51 moving to the reading end 31 annihilate, i.e. erase the data stored at the reading end 31, and in particular, the annihilation of the skutterer can be precisely controlled by injecting a spin-polarized current through the probe of the SP-STM, and the written data is changed from "1" to "0", thereby realizing the function of information screening at a specific storage path.
In another embodiment, as shown in fig. 4b, we apply a current to make the magnetic skutterer 52 moving to the reading end 41 annihilate, i.e. erase the data stored at the reading end 41, and particularly, the annihilation of the skutterer can be precisely controlled by injecting a spin-polarized current through the probe of the SP-STM, and the written data is changed from "1" to "0", thereby realizing the function of information screening at a specific storage path.
The present invention also provides another magnetic skyburn-based information storage device, as shown in fig. 5, which includes a first level track, a second level track, a write terminal, a first read terminal, a second read terminal, a third read terminal, and a fourth read terminal, wherein the first level track includes a first segment 100 and a second segment 200. One end of the first segment 100 is connected with one end of the second segment 200, a defect is formed on the surface of the material of the second segment 200, the width of the second segment 200 is larger than that of the first segment 100, and the width direction is a direction perpendicular to the moving path of the magnetic strobilurin in the first segment and the second segment under the driving current. The second segment 200 is used to cause the pinned magnetic segmentor moving from the first segment 100 to the second segment 200 to be split into two magnetic segmentors by the drive current.
The second level track includes a first track 301, a second track 302, a third segment 401, a fourth segment 402, a fifth segment 501, a sixth segment 502, a seventh segment 503, and an eighth segment 504. One end of the first track 301 and one end of the second track 302 are connected to the other end of the second segment 200, the other end of the first track 301 is connected to one end of the third segment 401, and the other end of the second track 302 is connected to one end of the fourth segment 402. Defects are formed on the surface of the third section 401 and the fourth section 402 of material. The first track 301 serves to convert one of the two split magnetic segmentors into a magnetic domain wall, and the second track 302 serves to convert the other of the two split magnetic segmentors into a magnetic domain wall. The third segment 401 causes the domain wall from the first track 301 to revert to magnetic skulls and to be split into two magnetic skulls by the drive current and one enters the fifth segment 501 and the other enters the sixth segment 502, and the fourth segment 402 causes the domain wall from the second track 302 to revert to magnetic skulls and to be split into two magnetic skulls by the drive current and one enters the seventh segment 503 and the other enters the eighth segment 504.
The write end is disposed at the other end of the first segment 100 for writing magnetic skullet.
The first reading end is arranged at the other end of the fifth segment 501 and is used for reading the magnetic skybird entering the fifth segment 501; the second reading end is arranged at the other end of the sixth section 502 and is used for reading the magnetic skyburn entering the sixth section 502; a third reading end is arranged at the other end of the seventh segment 503 and is used for reading the magnetic skyburn entering the seventh segment 503; the fourth reading end is disposed at the other end of the eighth segment 504, and is used for reading the magnetic sigecures entering the eighth segment 504.
A flow chart of an information storage method based on the structure of the magnetic skammomum information storage device is shown in fig. 6, and the specific implementation steps are as follows:
s100, writing magnetic sigecures into the first section 100 of the racetrack, driving current to enter the second section 200 of the racetrack, pinning the magnetic sigecures on the racetrack, and splitting the pinned magnetic sigecures into two independent magnetic sigecures by the driving current.
S200, driving the split magnetic segmentum into the first track 301 and the second track 302, respectively, to become a magnetic domain wall pair.
S300, continuously driving, wherein the magnetic domain wall pairs move from the first track 301 and the second track 302 to the third segment 401 and the fourth segment 402 respectively, the magnetic domain wall pairs are reduced into magnetic sGermin, and the reduced magnetic sGermin generates a pinning effect again.
S400, driving current enables the magnetic skyscrapers pinned on the track to be split into two independent magnetic skyscrapers again, driving is continued, and the four split independent magnetic skyscrapers move to a fifth track segment 501, a sixth track segment 502, a seventh track segment 503 and an eighth track segment 504 respectively.
S500, detecting magnetic skyblue minks with the same storage information at the first track reading end, the second track reading end, the third track reading end and the fourth track reading end.
In step S100, a magnetic siglec is generated at the write terminal of the first-level racetrack 100 of the memory device using the polarization current, and the write terminal may or may not generate the siglec. In one embodiment, spin-polarized current can be used to inject into the magnetic layer through the probe of the SP-STM, flip the local magnetic moment direction, and also accurately generate or annihilate the skyngmon by the spin-polarized current; the generation of segminsterns using spin-polarized current injection above is only one example, although segminsterns may also be generated in specific structures using domain walls or other means.
The driving current is driven into the second segment 200 of the racetrack, and in one embodiment, the driving current is such that within one clock cycle, a "clock" driving pulse with a constant magnitude and duration is generated in the racetrack, and under the action of the pulse driving current, the written sigecures are sequentially transmitted along the nano racetrack, so as to form a sigecures sequence containing effective information, and complete the information transmission process.
The magnetic skybromone enters the second track section 200 from the first track section 100, and is pinned at the second track section 200 due to the defect on the material surface, at this time, the magnetic skybromone pinned at the second track section 200 will not move under the action of the driving current, but when the driving current is increased, the pinned magnetic skybromone will be split into two independent magnetic skymons, and in one embodiment, the driving current is 106～1012A/m2The specific driving current can be adjusted according to actual conditions.
In one embodiment, the magnetic skatemers are stretched as they enter the second section 200 of the track due to the width ratio of the first section 100 to the second section 200 of the track, i.e., the magnetic skatemers enter the wide track from the narrow track.
In step S300, driving is continued, the magnetic domain wall pair is moved from the first track 301 and the second track 302 to the third segment 401 and the fourth segment 402, respectively, the magnetic domain wall pair is reduced to magnetic segmentins, and since the surfaces of the third segment 401 and the fourth segment 402 have defects, the magnetic segmentins moved to the third segment 401 and the fourth segment 402 are pinned again, and do not move under the action of the driving current.
In step S400, increasing the driving current can split the magnetic sigecures pinned on the racetrack into two independent magnetic sigecures again, and the split magnetic sigecures have topology protection, so that the properties of the split magnetic sigecures are not changed and information can still be transmitted continuously; with the driving current, the four separated magnetic skynergons will move to the fifth track segment 501, the sixth track segment 502, the seventh track segment 503 and the eighth track segment 504, respectively.
In step S500, the magnetic siganmin with the same storage information can be detected at the first track reading end, the second track reading end, the third track reading end, and the fourth track reading end, so that the multiple copy and multi-bit storage functions of the information are completed. In one embodiment, a method for realizing the skynet detection by electrical means in a Co/Ge/Fe Magnetic Tunnel Junction (MTJ), since the tunneling magnetoresistance of the MTJ depends on the direction of the magnetic moment in the free layer, when the skynet moves below a read head composed of the MTJ, the change in the direction of the magnetic moment causes a change in the state of an electron associated with spin, so that the MTJ tunneling magnetoresistance changes, and whether the skynet exists in the read head region can be determined by reading the change in the resistance.
In this case, the information at the write end in the storage device is split twice, i.e. copied four times, and the data is detected at the corresponding four data read ends, i.e. by the storage method based on the srigma storage device of the present invention, multiple copies of data information and synchronous information storage functions of different paths are realized.
On the other hand, correspondingly, the current can be used at the other end, i.e., the reading end, of the fifth track segment 501, the sixth track segment 502, the seventh track segment 503 and the eighth track segment 504 to delete the unnecessary data, thereby completing the function of screening information on a specific path. In one embodiment, the magnetic strobilurins corresponding to different reading ends can be erased according to requirements, and the detected information is changed from '1' to '0', so that the information screening function is completed. In one embodiment, the process of screening information at the first read end can be completed by injecting a spin-polarized current through a probe of an SP-STM to control the annihilation of the skunk photons at the first read end to erase the skunk photons in a particular memory path.
In one embodiment, the process of screening information at the second read end can be completed by injecting a spin-polarized current through a probe of an SP-STM to control the annihilation of skymons at the second read end to erase skymons in a specific memory path.
In one embodiment, the process of screening information at the third read end can be completed by injecting a spin-polarized current through a probe of an SP-STM to control the annihilation of the skullons at the third read end to erase the skullons in a specific memory path.
In one embodiment, the process of screening information at the fourth read end can be completed by injecting a spin-polarized current through a probe of an SP-STM to control the annihilation of the skunk photons at the fourth read end to erase the skunk photons in a specific memory path.
In the description herein, references to the description of "some embodiments," "other embodiments," "desired embodiments," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, a schematic description of the above terminology may not necessarily refer to the same embodiment or example.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that various changes and modifications can be made by those skilled in the art without departing from the spirit of the invention, and these changes and modifications are all within the scope of the invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A method of storing information in a magnetic skunk based memory device, the memory device comprising: the track comprises a first section, a second section, a third section and a fourth section, wherein one end of the first section is connected with one end of the second section, the other end of the second section is connected with one end of the third section and one end of the fourth section, and the second section forms a defect on the surface of a material; the write-in end is arranged at the other end of the first section and is used for writing in the magnetic skyrmion; the first reading end is arranged at the other end of the third section and used for reading the magnetic skyrmion entering the third section; a second reading end, disposed at the other end of the third segment, for reading the magnetic skyrmion entering the fourth segment, the method including:
injecting a polarization current at the write end to write a magnetic skyrmion;
applying a drive current on the racetrack such that the magnetic skyrmion written by the write terminal moves from a first segment to a second segment, is pinned at the second segment, and is split into two magnetic skyrmions by the drive current; one of the two magnetic segmentors after the splitting moves to the third section, and the other moves to the fourth section;
and reading information from the first reading end and the second reading end.
2. The method of claim 1 further comprising the step of applying an erase current to erase the magnetic skutterances in the third segment.
3. The method of claim 1 or 2, further comprising the step of applying an erase current to erase the magnetic sgemins in the fourth segment.
4. The method of claim 3, wherein said injecting a polarization current comprises:
a spin-polarized current is injected into the magnetic layer through a probe of a spin-polarized scanning tunneling microscope.
5. The method of claim 1, wherein the memory device further comprises a substrate, the racetrack being disposed on the substrate.
6. The method of claim 1, wherein the width of the second segment is greater than the width of the first segment, the width direction being perpendicular to the path of movement of the magnetic segmentin the first and second segments under the drive current; the ratio of the width of the second section to the width of the first section is no greater than 3.
7. The method of claim 1, wherein the defect is used to pin a magnetic skutterer moving from the first segment to the second segment, and the pinned magnetic skutterer is split into two magnetic skutterers by the drive current.
8. A magnetic skutter-based memory device, comprising:
a first-stage racetrack comprising a first segment and a second segment, one end of the first segment being connected to one end of the second segment, a defect being formed on a surface of the second segment material, the second segment being configured to cause a pinned magnetic skullet that moves from the first segment to the second segment to be split into two magnetic skullets by a drive current;
the second-level track comprises a first track, a second track, a third section, a fourth section, a fifth section, a sixth section, a seventh section and an eighth section, wherein one end of the first track and one end of the second track are connected with the other end of the second section, the other end of the first track is connected with one end of the third section, and the other end of the second track is connected with one end of the fourth section; forming defects on the surfaces of the third and fourth sections of material; the first track is used for converting one of the two split magnetic segmentons into a magnetic domain wall, and the second track is used for converting the other of the two split magnetic segmentons into a magnetic domain wall; the third segment reduces the magnetic domain wall from the first track to magnetic segmentins and is split into two magnetic segmentins by the drive current and one enters the fifth segment and the other enters the sixth segment, the fourth segment reduces the magnetic domain wall from the second track to magnetic segmentins and is split into two magnetic segmentins by the drive current and one enters the seventh segment and the other enters the eighth segment;
the writing end is arranged at the other end of the first section and is used for writing magnetic siganmin;
the first reading end is arranged at the other end of the fifth section and used for reading the magnetic skybutton entering the fifth section;
the second reading end is arranged at the other end of the sixth section and is used for reading the magnetic skyblue sodium entering the sixth section;
the third reading end is arranged at the other end of the seventh segment and used for reading the magnetic skybutton entering the seventh segment;
and the fourth reading end is arranged at the other end of the eighth section and is used for reading the magnetic skybird entering the eighth section.
9. The magnetic segmentum-based memory device according to claim 8, characterized in that the width of the second segment is larger than the width of the first segment, the width direction being the direction perpendicular to the path of movement of the magnetic segmentum in the first and second segments under the drive current, the ratio of the width of the second segment to the width of the first segment being not more than 3.
10. A method of storing information in a magnetic sightline-based memory device, wherein the memory device is a magnetic sightline-based memory device according to claim 8 or 9, the method comprising:
injecting a polarization current at the write end to write a magnetic skyrmion;
applying a drive current on the first level racetrack and the second level racetrack such that the magnetic skulls written by the write terminal move from a first segment to a second segment to be pinned at the second segment and are split into two magnetic skulls by the drive current;
one of the two split magnetic segmentons is converted into a magnetic domain wall to move to the first track, and the other one of the two split magnetic segmentons is converted into a magnetic domain wall to move to the second track;
the domain wall from the first track reverts to magnetic segregants in a third segment and is split by the drive current into two magnetic segregants and one enters the fifth segment and the other enters the sixth segment;
the magnetic domain wall from the second track reverts to magnetic skulls at a fourth track and is split by the drive current into two magnetic skulls and one enters the seventh segment and the other enters the eighth segment;
and reading information from the first reading end, the second reading end, the third reading end and the fourth reading end.
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| CN112992215B (en) * | 2021-03-10 | 2023-02-17 | 香港中文大学（深圳） | Magnetic skynet-based storage device and information storage method thereof |
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| CN107332554A (en) * | 2017-06-09 | 2017-11-07 | 香港中文大学（深圳） | OR gate and its control and methods for using them based on magnetic Skyrmion |
| CN108521275B (en) * | 2018-04-03 | 2020-02-04 | 电子科技大学 | Logic gate based on magnetic siganmin |
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