CN106877858A - A kind of logic gates based on magnetic Skyrmion - Google Patents
A kind of logic gates based on magnetic Skyrmion Download PDFInfo
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- CN106877858A CN106877858A CN201611226414.1A CN201611226414A CN106877858A CN 106877858 A CN106877858 A CN 106877858A CN 201611226414 A CN201611226414 A CN 201611226414A CN 106877858 A CN106877858 A CN 106877858A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
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Abstract
A kind of logic gates based on magnetic Skyrmion, gate elementary cell is converged to a magnetic metal nano wire and constitutes by two magnetic metal nanowire ends, three magnetic metal nano wire junctions are provided with magnetic neck, three magnetic necks have three kinds of different in width, to provide the control of logical operation using electric current, "AND" gate or "or" gate are formed；Described gate is three terminal devices that three magnetic metal nano wires are constituted, and input is by two parallel connections with magnetic neck (MAAnd MB) nano wire composition, its end assemble series connection formed a magnetic metal nano wire be with magnetic neck (MX) one output magnetic metal nano wire.
Description
Technical field
It is more particularly to a kind of to change magnetic neck resistance using magnetic Skyrmion the present invention relates to microelectronics technology,
So as to realize logical AND gate and logic sum gate.
Background technology
Gate is the basis of hyundai electronicses information, realizes the circuit referred to as logic gates of various basic logic relations.
In logic algebra, logical variable has two kinds of values true (1) and vacation (0).And in logic circuits, high level is generally defined to patrol
It is volume true and low level is logical falsehood, i.e., become representing " 1 ", " 0 " the two logics respectively with high and low level the two electricity parameters
Amount, then changes the height of voltage, it is achieved thereby that basic logical gate operations using circuit.Table one gives logical AND gate
Truth table, wherein A, B are input logic variable, and X is output logical variable.Table two gives the truth table of logic sum gate.
Table one：The truth table of logical AND gate
Table two：The truth table of logic sum gate
Conventional gate is based on semiconductor circuit at present, but is limited by semiconductor material characteristic, semiconductor-based logic
Door must operate within the scope of certain temperature.And during logic circuit work, due to the fuel factor of electric current, its device temperature can tire out
Product is raised, and Gu Bandaotiluojimen has corresponding heat abstractor, such as fin, fan, so that semiconductor-based logic circuit
There is larger energy dissipation.Therefore, it is proposed that a kind of logic gates based on magnetic Skyrmion, in the driving of electric current
Under, Skyrmion can be accumulated at magnetic neck, and then change the voltage at magnetic neck two ends.Relative to semiconductor-based logic circuit, its tool
There is the features such as energy consumption is low, heat endurance is good and is easily integrated.
Magnetic Skyrmion is a kind of nanometer magnetic structure of vortex state, and the characteristic with particle, in being found in first
In the asymmetric bulk crystals of the heart, it has the features such as size is small, stability is high and easily manipulates, and is considered as electronic component of future generation
Information carrier.And going deep into research, this special standard is have also discovered in the bilayer film of strong Quantum geometrical phase
Particle (J.Sampaio, V.Cros, S.Rohart, A.Thiaville, and A.Fert, Nature Nanotechnology,
Vol.8, pp.839-844, Nov 2013.), to realize that the electronic device based on Skyrmion provides architecture basics.And it is another
Aspect, generation of the people to Skyrmion has been also carried out extensive research, as a result shows, electric current can not only drive existing this lattice
Pine torch is moved in film layer, can also be induced in the film of given shape generation Skyrmion (J.Iwasaki,
M.Mochizuki,and N.Nagaosa,Nature Nanotechnology,vol.9,pp.156-156,Feb 2014.)。
That is, using the Skyrmion in current control thin film, new circuit element can be designed, and with existing integrated circuit
It is mutually compatible.
The content of the invention
The purpose of the present invention is to propose a kind of logic gates based on magnetic Skyrmion.Due to magnetic metal nanometer
Line junction magnetic neck breadth degree is different, causes Skyrmion to accumulate or dissipate at magnetic neck, and then changes the voltage at magnetic neck two ends,
Finally realize logic and operation and logic or computing.
Technical solution of the present invention：A kind of logic gates based on magnetic Skyrmion, gate elementary cell is by two
Input magnetic metal nano wire right-hand member is converged to an output magnetic metal nano wire and constitutes, and three magnetic metal nano wires are carried
Magnetic neck, controls three width difference (M as shown in Figure 2 of magnetic neck1, M2And M3), "AND" gate can be formed or "or" is patrolled
Collect door；Described gate is three terminal devices that three magnetic metal nano wires are constituted, and input carries magnetic neck by two
(MAAnd MB) nano wire composition, its end is assembled to form one with magnetic neck (MX) output magnetic metal nano wire.
It is concave pattern that input excites the structure of magnetic Skyrmion.
Described magnetic material is the bilayer film of Co and Pt.
When described gate is the OR function of "or" gate, the magnetic neck breadth degree of two inputs is identical, and is more than
The magnetic neck breadth degree of output end.
Described gate is the AND function of "AND" gate,；Two width of the magnetic neck of input, critical current phases
Together, width, critical current and less than output end magnetic neck.
Described logic gate, input nano wire is parallel to each other, the transition part subpackage between output and input line
Include two curved shape lines 5, line and 1/2 upward parabolic shape of the every curved shape line including 1/2 downward parabolic shape
Line.The left end of input (arm) is connected with two square-shaped electrodes (1) with same size, the right-hand member connection of output end (arm)
There is a square-shaped electrode (1).
Described gate input and outlet chamber order about the movement of magnetic Skyrmion using electric current so that magnetic this
Lattice pine torch is accumulated or is dissipated at magnetic neck；Skyrmion is captured by the magnetic neck, and magnetic neck resistance is compared to without this lattice of capture magnetic
It is much larger during pine torch；By the critical current of the electric current more than magnetic neck of magnetic neck, magnetic Skyrmion will be moved along the sense of current
Dynamic, so that the reduction of magnetic neck resistance, i.e., be more than critical current by the electric current of magnetic neck, Skyrmion passes through magnetic under the driving of electric current
Neck, will not accumulate, and its resistance is smaller.Low voltage of " 1 " expression of logic between magnetic neck two ends, and " 0 " of logic
Then represent the high voltage between magnetic neck two ends.
The preparation of device of the present invention：First by the thick Co/Pt duplicatures of vacuum sputtering growth 20nm, and on duplicature
Fang Shengchang 2nm thick Au films, as protective layer.Then electron beam lithography is used, three nano wires with magnetic neck are obtained, wherein
, used as input, an X can excite the concavity figure of Skyrmion on the left of input as output with preparation for two A, B
Shape, as shown in Figure 3.Finally, it is two input left sides, an output end right side and 3 left and right of magnetic neck two to use photoetching process
Sidelight carves electrode, and is deposited with Au so as to wiring in electrode zone.
Beneficial effect, it is proposed that a kind of logic gates based on magnetic Skyrmion, using in current control thin film
Skyrmion, can design new circuit element, and mutually compatible with existing integrated circuit.Conveniently realize logic and operation and patrol
Collect or computing.
Brief description of the drawings
Fig. 1 is the structural representation based on magnetic Skyrmion logical AND gate and logic sum gate；
M in Fig. 21, M2, M3Magnetic neck (the M of 3 types for needed for realizing gate1, M2, M3)；
Fig. 3 is the concave architecture ((2) in Fig. 1) that input left side produces Skyrmion.
Specific embodiment
As shown in Fig. 2 M1、M2, M3It is 3 kinds of magnetic necks of different neck breadth.When the Skyrmion for having electric current I to drive is (black in magnetic neck
Color round dot) when respectively flowing through this 3 kinds of magnetic necks, cause the current density for flowing through magnetic neck different because neck breadth is different, so as to influence
The distribution of Skyrmion in magnetic neck, and then change the resistance of the magnetic neck left and right sides.M2With respect to M1Neck breadth is wider, therefore current density is small,
Skyrmion is accumulated at magnetic neck, the increase of magnetic neck resistance；M3Relative to M1Neck breadth is narrower, therefore current density is big, and Skyrmion is in electricity
Moved along the sense of current under the driving of stream, Skyrmion quantity is reduced at magnetic neck, magnetic neck resistance reduces.Logical one is represented in magnetic
Low voltage between the two ends of neck, and logical zero then represents high voltage.To realize "or" gate, the input magnetic neck
Critical current have to be larger than the critical current of the output magnetic neck, it means that two magnetic neck (M of input lineA, MB) neck breadth must
Magnetic neck (the M of output line must be more thanX) neck breadth, now MA, MBIt is M1Type magnetic neck, MXIt is M3Type magnetic neck.For realize " and " function, institute
State two input magnetic neck (MA, MB) width be necessarily less than the output line constriction (MX) width.Additionally, input line magnetic neck breadth
Degree (MA, MB) summation have to be larger than output necked width (MX), now MA, MBIt is M1Type magnetic neck, MXIt is M2Type magnetic neck.
First by the thick Co/Pt duplicatures of vacuum sputtering growth 20nm, and the thick Au of 2nm are grown above duplicature
Film, as protective layer.Then electron beam lithography is used, is obtained with 2 μm of magnetic neck (M longA, MB, MX) three nano wires, wherein
Two A, B left side as input, an X right side as output end, and with Si Geming can be excited on the left of input
The concave pattern 2 (Fig. 1) of son.Finally, it is two input left sides, output end right side and 3 magnetic necks to use photoetching process
The left and right sides makes electrode by lithography, and is deposited with Au so as to wiring in electrode zone, and input electrode is the square-shaped electrode 1 of 4 μm of 4 μ m
(Fig. 1), the measuring electrode 4 of magnetic neck both sides 3 is 2 μm of 2 μ m (Fig. 1), curved shape line 5.
Claims (9)
1. a kind of logic gates based on magnetic Skyrmion, it is characterized in that gate elementary cell is received by two magnetic metals
Rice noodles end is converged to a magnetic metal nano wire and constitutes, and three magnetic metal nano wire junctions are provided with magnetic neck, three magnetic
Neck has three kinds of different in width, to provide the control of logical operation using electric current, forms "AND" gate or "or" gate；
Described gate is three terminal devices that three magnetic metal nano wires are constituted, and input is by two parallel connections with magnetic neck
(MAAnd MB) nano wire composition, its end assemble series connection formed a magnetic metal nano wire be with magnetic neck (MX) one
Output magnetic metal nano wire.
2. the logic gates based on magnetic Skyrmion according to claim 1, it is characterized in that described magnetic material
It is Co/Pt duplicatures.
3. the logic gates based on magnetic Skyrmion according to claim 1, it is characterized in that input excites magnetic
The structure of Skyrmion is concave pattern.
4. the logic gates based on magnetic Skyrmion according to claim 1, it is characterized in that when described gate
It is the OR function of "or" gate, the magnetic neck breadth degree of the magnetic neck breadth degree more than output end of input.
5. the logic gates based on magnetic Skyrmion according to claim 1, it is characterized in that described gate is
The AND function of "AND" gate, the width of the magnetic neck of input, critical current are respectively smaller than the width of output end magnetic neck, critical
Electric current.
6. the logic gates based on magnetic Skyrmion according to claim 1, it is characterized in that described gate is defeated
Enter the movement for ordering about magnetic Skyrmion using electric current with outlet chamber, so that magnetic Skyrmion is accumulated or consumed at magnetic neck
Dissipate；Skyrmion is captured by the magnetic neck, much larger when magnetic neck resistance is compared to without capture magnetic Skyrmion；By magnetic neck
More than the critical current of magnetic neck, magnetic Skyrmion will be moved electric current along the sense of current, so that the reduction of magnetic neck resistance.
7. the logic gates based on magnetic Skyrmion according to claim 1, it is characterized in that described gate, institute
Stating gate includes input magnetic neck and output magnetic neck, and " 1 " represents low voltage between the two ends of magnetic constriction, and " 0 " then table
Show in magnetic neck two ends high voltage.
8. the logic gates based on magnetic Skyrmion according to claim 1, it is characterized in that described gate list
Unit, input nano wire is parallel to each other with input nano wire.
9. the logic gates based on magnetic Skyrmion according to claim 1, it is characterized in that input/output terminal nanometer
Line is parallel with other logic gate input-output lines, and the transition portion between output and input line includes two curved shapes
Line (5), line and the line of 1/2 upward parabolic shape of the every curved shape line including 1/2 downward parabolic shape.Input
The left end of (arm) is connected with two square-shaped electrodes (1) with same size, the right-hand member of output end (arm) be connected with one it is square
Electrode (1).
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107846215A (en) * | 2017-10-31 | 2018-03-27 | 华中科技大学 | A kind of reconfigurable logic device based on magnetic Skyrmion |
| CN108512545A (en) * | 2018-04-03 | 2018-09-07 | 电子科技大学 | A kind of reconfigurable logic door based on magnetic Skyrmion |
| CN108521275A (en) * | 2018-04-03 | 2018-09-11 | 电子科技大学 | A kind of logic gate based on magnetic Skyrmion |
| CN110233617A (en) * | 2019-05-20 | 2019-09-13 | 中国地质大学（武汉） | It is a kind of based on magnetic Skyrmion with logic gate and NAND Logic door |
| CN110233609A (en) * | 2019-05-20 | 2019-09-13 | 中国地质大学（武汉） | The JK flip-flop with annular magnet racing track structure based on magnetic Skyrmion |
| CN110716328A (en) * | 2019-11-25 | 2020-01-21 | 电子科技大学 | Method for generating vortex spin wave |
| CN111427539A (en) * | 2020-03-20 | 2020-07-17 | 北京航空航天大学 | Random data stream computing system and computing control method based on siganmin |
| US11539365B2 (en) * | 2019-06-27 | 2022-12-27 | Board Of Regents, The University Of Texas System | Reversible computing system and method based on conservative magnetic skyrmion logic |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107846215A (en) * | 2017-10-31 | 2018-03-27 | 华中科技大学 | A kind of reconfigurable logic device based on magnetic Skyrmion |
| CN107846215B (en) * | 2017-10-31 | 2020-07-28 | 华中科技大学 | Reconfigurable logic device based on magnetic sigecum |
| CN108512545A (en) * | 2018-04-03 | 2018-09-07 | 电子科技大学 | A kind of reconfigurable logic door based on magnetic Skyrmion |
| CN108521275A (en) * | 2018-04-03 | 2018-09-11 | 电子科技大学 | A kind of logic gate based on magnetic Skyrmion |
| CN108512545B (en) * | 2018-04-03 | 2020-02-04 | 电子科技大学 | Reconfigurable logic gate based on magnetic sigecum |
| CN110233617A (en) * | 2019-05-20 | 2019-09-13 | 中国地质大学（武汉） | It is a kind of based on magnetic Skyrmion with logic gate and NAND Logic door |
| CN110233609A (en) * | 2019-05-20 | 2019-09-13 | 中国地质大学（武汉） | The JK flip-flop with annular magnet racing track structure based on magnetic Skyrmion |
| CN110233609B (en) * | 2019-05-20 | 2020-10-30 | 中国地质大学（武汉） | Magnetic skyburn-based JK trigger with annular magnetic racetrack structure |
| US11539365B2 (en) * | 2019-06-27 | 2022-12-27 | Board Of Regents, The University Of Texas System | Reversible computing system and method based on conservative magnetic skyrmion logic |
| CN110716328A (en) * | 2019-11-25 | 2020-01-21 | 电子科技大学 | Method for generating vortex spin wave |
| CN111427539A (en) * | 2020-03-20 | 2020-07-17 | 北京航空航天大学 | Random data stream computing system and computing control method based on siganmin |
| CN111427539B (en) * | 2020-03-20 | 2022-12-23 | 北京航空航天大学 | Random data stream computing system and computing control method based on siganmin |
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