CN110233120A - Semiconductor manufacturing apparatus - Google Patents
Semiconductor manufacturing apparatus Download PDFInfo
- Publication number
- CN110233120A CN110233120A CN201910156782.0A CN201910156782A CN110233120A CN 110233120 A CN110233120 A CN 110233120A CN 201910156782 A CN201910156782 A CN 201910156782A CN 110233120 A CN110233120 A CN 110233120A
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- Prior art keywords
- nozzle
- grafting material
- cutting plate
- semiconductor manufacturing
- manufacturing apparatus
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
- B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
- B05C5/0225—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work characterised by flow controlling means, e.g. valves, located proximate the outlet
- B05C5/0229—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work characterised by flow controlling means, e.g. valves, located proximate the outlet the valve being a gate valve or a sliding valve
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
- B05C11/1002—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves
- B05C11/1026—Valves
- B05C11/1031—Gate valves; Sliding valves
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
- B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
- B05C5/027—Coating heads with several outlets, e.g. aligned transversally to the moving direction of a web to be coated
- B05C5/0275—Coating heads with several outlets, e.g. aligned transversally to the moving direction of a web to be coated flow controlled, e.g. by a valve
- B05C5/0279—Coating heads with several outlets, e.g. aligned transversally to the moving direction of a web to be coated flow controlled, e.g. by a valve independently, e.g. individually, flow controlled
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/06—Solder feeding devices; Solder melting pans
- B23K3/0646—Solder baths
- B23K3/0653—Solder baths with wave generating means, e.g. nozzles, jets, fountains
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/743—Apparatus for manufacturing layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
- B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
- B05C5/0208—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work for applying liquid or other fluent material to separate articles
- B05C5/0212—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work for applying liquid or other fluent material to separate articles only at particular parts of the articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/06—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying two different liquids or other fluent materials, or the same liquid or other fluent material twice, to the same side of the work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/756—Means for supplying the connector to be connected in the bonding apparatus
- H01L2224/75611—Feeding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Coating Apparatus (AREA)
- Nozzles (AREA)
- Die Bonding (AREA)
Abstract
The present invention relates to the semiconductor manufacturing apparatuses for spraying grafting material from multiple nozzle selections.Semiconductor manufacturing apparatus (100) has coating element (20) and 1 syringe (10), 1 syringe (10) supply grafting material (M1), the coating element (20) are connect with syringe (10).Nozzle (N1a, N1b) is installed in coating element (20).Coating element (20) has the switching mechanism (Mc1) for spraying the grafting material (M1) supplied from syringe (10) selectively from nozzle (N1a, N1b).
Description
Technical field
The present invention relates to have the function of supplying the semiconductor manufacturing apparatus of grafting material.
Background technique
For the manufacturing process of semiconductor module, grafting material is supplied to base materials such as substrate, lead frames, is taken in the base material
Carry the components such as semiconductor chip.The form of the used grafting material is solid forms or cream form.In supply cream form
Cream (grafting material) in the case where, usually carry out supply method N below.
In supply method N, the structure for connecting nozzle with the syringe for being filled with cream is used.By the nozzle be designed as with
Application pattern suitable for each component matches.In supply method N, the cream in syringe is extruded via nozzle.The cream as a result,
It is applied to appointed part.In addition, being used as needed semiconductor manufacturing apparatus in supply method N, wherein the semiconductor
Manufacturing device has used multiple nozzles.
In patent document 1, disclose using multiple nozzles by cream be applied to multiple positions structure (hereinafter also referred to as
" dependency structure A ").
Patent document 1: Japanese Unexamined Patent Publication 60-095977 bulletin
For the manufacturing process of semiconductor module, it is sometimes desirable to only corresponding with 1 nozzle that multiple nozzles are included
Application pattern handled.In this case, it is desirable that the structure for spraying grafting material from multiple nozzle selections.Just
For dependency structure A, it is unable to satisfy the requirement.
Summary of the invention
The present invention proposes that its purpose is to provide can be by grafting material in order to solve above-mentioned such problems
The semiconductor manufacturing apparatus sprayed from multiple nozzle selections.
To achieve the goals above, the semiconductor manufacturing apparatus that one embodiment of the present invention is related to has: 1 syringe,
It supplies the grafting material with mobility；And coating element, it connect with the syringe, is installed in the coating element
There are multiple nozzles, the coating element has switching mechanism, which makes the engagement material supplied from the syringe
Material is sprayed from the multiple nozzle selection.
The effect of invention
According to the present invention, the coating element, which has, makes the grafting material supplied from the syringe from the multiple
The switching mechanism sprayed to nozzle selection.Thereby, it is possible to spray grafting material from multiple nozzle selections.
Detailed description of the invention
Fig. 1 is the oblique view of the appearance for the semiconductor manufacturing apparatus for indicating that embodiment 1 is related to.
Fig. 2 is the sectional view of a part for the semiconductor manufacturing apparatus that embodiment 1 is related to.
Fig. 3 is the oblique view of the appearance for the semiconductor manufacturing apparatus for indicating that variation 1 is related to.
Fig. 4 is the sectional view of a part for the semiconductor manufacturing apparatus that variation 1 is related to.
Fig. 5 is the sectional view of a part of the semiconductor manufacturing apparatus for the structure that there is variation 2 to be related to.
Fig. 6 is the sectional view of a part of the semiconductor manufacturing apparatus for the structure that there is variation 3 to be related to.
Fig. 7 is the oblique view of the appearance for the semiconductor manufacturing apparatus for indicating that embodiment 2 is related to.
Fig. 8 is the sectional view of a part for the semiconductor manufacturing apparatus that embodiment 2 is related to.
Fig. 9 is the sectional view of a part of the semiconductor manufacturing apparatus for the structure that there is variation 4 to be related to.
Figure 10 is the sectional view of a part of the semiconductor manufacturing apparatus for the structure that there is variation 5 to be related to.
The explanation of label
4,4a, 4A, 4b cut off plate, 10 syringes, 20,20A coating element, H1, H2a, H2b, H2Aa, H2Ab, H21, H4
Opening, M1 grafting material, N1a, N1b nozzle, P1, P1a, P1b push rod, 100,100A semiconductor manufacturing apparatus.
Specific embodiment
Hereinafter, embodimentsing of the present invention will be described while referring to attached drawing.In the following figures, to identical
Each structural element mark identical label.The name and function for being labeled with each structural element of identical label is identical.Therefore, have
When omit about each structural element for being labeled with identical label a part detailed description.
In addition, the size of each structural element illustrated in embodiments, material, shape, each structural element is opposite
Configuration etc. can also be suitably changed according to the structure, various conditions etc. of application the device of the invention.In addition, sometimes each in each figure
The size of structural element is different from actual size.
1 > of < embodiment
Fig. 1 is the oblique view of the appearance for the semiconductor manufacturing apparatus 100 for indicating that embodiment 1 is related to.In Fig. 1, the side X
It is orthogonal to, Y-direction and Z-direction.X-direction shown in figure below, Y-direction and Z-direction are also orthogonal.Hereinafter,
" X-direction " will be also referred to as comprising the direction including X-direction and the direction opposite with the X-direction (-X direction).In addition, hereinafter,
" Y direction " will be also referred to as comprising the direction including Y-direction and the direction opposite with the Y-direction (-Y direction).In addition, hereinafter,
" Z-direction " will be also referred to as comprising the direction including Z-direction and the direction opposite with the Z-direction (-Z direction).
In addition, hereinafter, by " face XY " is also referred to as comprising the plane including X-direction and Y direction.In addition, hereinafter, will
" face XZ " is also referred to as comprising the plane including X-direction and Z-direction.In addition, hereinafter, will include Y direction and Z axis side
" face YZ " is also referred to as to plane inside.
Fig. 2 is the sectional view of a part for the semiconductor manufacturing apparatus 100 that embodiment 1 is related to.In addition, in Fig. 2, only
Main structural element (for example, aftermentioned syringe 10, aftermentioned coating element 20, aftermentioned cutting plate 4) is passed through into section
It illustrates.In addition, the main structural element is briefly shown in Fig. 2.
Referring to Fig.1 and Fig. 2, semiconductor manufacturing apparatus 100 have: 1 syringe 10；Coating element 20；Nozzle N1a,
N1b；And cutting plate control device 50.Syringe 10 has the structure for accommodating aftermentioned grafting material M1.Syringe 10 has
Opening H1 as through-hole.
Grafting material M1 is filled in syringe 10.Grafting material M1 is the material with mobility.That is, grafting material M1
It is cream material.Grafting material M1 is, for example, that semiconductor chip is being bonded to substrate, is being drawn in the manufacturing process of semiconductor module
It is used in the case where the base materials such as wire frame.Grafting material M1 is, for example, solder.
Coating element 20 is the container constituted in a manner of storing to grafting material M1.Coating element 20 and syringe
10 connections.Specifically, coating element 20 is connect with the opening H1 of syringe 10.Syringe 10 is configured to from opening H1 to coating
Unit 20 supplies grafting material M1.
The structure of nozzle N1a is different from the structure of nozzle N1b.For example, position and the spray in aperture and hole in nozzle N1a
The position in aperture and hole in mouth N1b is different.
Coating element 20 is provided with opening H2a, H2b as through-hole.In addition, being equipped with nozzle in coating element 20
N1a,N1b.Nozzle N1a is connect with opening H2a.The grafting material M1 that nozzle N1a is configured to have passed through opening H2a sprays.Spray
Mouth N1b is connect with opening H2b.The grafting material M1 that nozzle N1b is configured to have passed through opening H2b sprays.
Coating element 20 has switching mechanism Mc1.Switching mechanism Mc1 makes the grafting material M1 supplied from syringe 10 from spray
Mouth N1a, N1b selectively spray.Switching mechanism Mc1 has cutting plate 4.Cutting off plate 4 includes cutting plate 4a, 4b.
Cutting plate control device 50 has the function of making connection unit 5a, 5b to move in (X-direction) in the horizontal direction.Even
The component that order member 5a, 5b is bar-like respectively.Cutting plate 4a is fixed in connection unit 5a.Cutting is fixed in connection unit 5b
Plate 4b.Therefore, cutting plate control device 50, which has, moves cutting plate 4a, 4b in the horizontal direction via connection unit 5a, 5b
Function.That is, cutting plate 4 (cutting plate 4a, 4b) is configured to freely to move in the horizontal direction.Plate 4a, 4b is cut off to carry out
It is mobile, selectively to block opening H2a, H2b.
Hereinafter, by road being used to flow for grafting material M1, until the opening H1 to the H2a that is open of syringe 10
Diameter is also referred to as " path P t1a ".In addition, hereinafter, by opening H1 being used to flow for grafting material M1, from syringe 10
Path until the H2b that is open is also referred to as " path P t1b ".
For the state of path P t1a, there are dissengaged positions Sxa and open state Swa.Dissengaged positions Sxa is path
The state that Pt1a is cut off by cutting plate 4a.In addition, the dissengaged positions Sxa of present embodiment is still open, H2a is hindered by cutting plate 4a
The state of plug.Open state Swa is the state that path P t1a is not cut off by cutting plate 4a.In addition, the opening shape of present embodiment
State Swa is still open H2a not by the state of cutting plate 4a obstruction.
For the state of path P t1b, there are dissengaged positions Sxb and open state Swb.Dissengaged positions Sxb is path
The state that Pt1b is cut off by cutting plate 4b.In addition, the dissengaged positions Sxb of present embodiment is still open, H2b is hindered by cutting plate 4b
The state of plug.Open state Swb is the state that path P t1b is not cut off by cutting plate 4b.In addition, the opening shape of present embodiment
State Swb is still open H2b not by the state of cutting plate 4b obstruction.
Hereinafter, being open state Swa by the state of path P t1a, and the state of path P t1b is the shape of dissengaged positions Sxb
Condition is also referred to as " situation Sa ".In addition, hereinafter, by the state of path P t1b be open state Swb, and the state of path P t1a be cut
The situation of disconnected state Sxa is also referred to as " situation Sb ".
Cutting plate control device 50 make cut off plate 4a, 4b move in the horizontal direction, with selectively situation occurred Sa with
And situation Sb.
Dispenser (dispenser) D1a is connected with via piping 7a in syringe 10.Dispenser D1a, which has, carries out air pressure
The function of adjustment.Specifically, dispenser D1a, which has, applies stressed function to the grafting material M1 in syringe 10 by air
Energy.Hereinafter, the pressure for grafting material M1 dispenser D1a being applied in syringe 10 is also referred to as " pressure Pw1 ".Dispenser
D1a is configured to freely to change pressure Pw1.Dispenser D1a changes pressure Pw1, so that syringe 10 will connect
Condensation material M1 is supplied to coating element 20.Grafting material M1 is flowed due to pressure Pw1 to coating element 20.
It is open state Swa in the state of path P t1a, and the state of path P t1b is dissengaged positions Sxb, that is, have occurred
In the case where situation Sa, nozzle N1a sprays the grafting material M1 in coating element 20.It is open shape in the state of path P t1b
State Swb, and the state of path P t1a is dissengaged positions Sxa, that is, in the case where situation Sb has occurred, nozzle N1b is by coating element
Grafting material M1 in 20 sprays.
Hereinafter, nozzle used in the ejection of grafting material M1 is also referred to as " using nozzle ".In addition, hereinafter, will not by
The nozzle of ejection for grafting material M1 is also referred to as " non-to use nozzle ".Certain one of nozzle N1a, N1b are using nozzle.Spray
It is non-using nozzle that in mouth N1a, N1b, which is not using nozzle person,.That is, nozzle N1a, N1b include to be sprayed using nozzle and non-use
Mouth.
Hereinafter, by it is in the grafting material M1 in coating element 20, towards the non-grafting material M1 using nozzle one
Part is also referred to as " grafting material M1x ".In addition, hereinafter, in the grafting material M1 in coating element 20, direction is used nozzle
Grafting material M1 another part be also referred to as " grafting material M1m ".
(movement)
Next, being illustrated to the movement of semiconductor manufacturing apparatus 100.Here, consider premise Pm1 below.Preceding
It mentions in Pm1, carries out the ejection processing Pa for spraying grafting material M1 from nozzle N1a.That is, in premise Pm1, nozzle N1a
It is using nozzle, nozzle N1b is non-using nozzle.In addition, there are grafting material M1 in coating element 20 in premise Pm1.
In addition, dispenser D1a changes pressure Pw1 in premise Pm1, so that from using nozzle to spray grafting material M1.
In spraying processing Pa, cutting plate control device 50 makes to cut off plate 4a, 4b (connection unit 5a, 5b) in the horizontal direction
Upper movement, with situation occurred Sa.The state of path P t1a is set to open state Swa, and the state quilt of path P t1b as a result,
It is set as dissengaged positions Sxb.
Therefore, stop towards the flowing of the non-grafting material M1x using nozzle, towards the grafting material M1m for using nozzle
Flowing do not stop.That is, the cutting plate 4 comprising cutting off plate 4a, 4b is configured to prevent the flowing of grafting material M1x, and do not prevent
The flowing of grafting material M1m.Grafting material M1m is sprayed from nozzle N1a as a result,.
Next, considering premise Pm2 below.In premise Pm2, carry out for spraying grafting material M1 from nozzle N1b
Ejection out handles Pb.That is, in premise Pm2, nozzle N1b is using nozzle, and nozzle N1a is non-to use nozzle.In addition, preceding
It mentions in Pm2, there are grafting material M1 in coating element 20.In addition, dispenser D1a changes pressure Pw1 in premise Pm2,
So that from using nozzle to spray grafting material M1.
In spraying processing Pb, cutting plate control device 50 makes to cut off plate 4a, 4b (connection unit 5a, 5b) in the horizontal direction
Upper movement, with situation occurred Sb.The state of path P t1b is set to open state Swb, and the state quilt of path P t1a as a result,
It is set as dissengaged positions Sxa.
Therefore, stop towards the flowing of the non-grafting material M1x using nozzle, towards the grafting material M1m for using nozzle
Flowing do not stop.That is, the cutting plate 4 comprising cutting off plate 4a, 4b is configured to prevent the flowing of grafting material M1x, and do not prevent
The flowing of grafting material M1m.Grafting material M1m is sprayed from nozzle N1b as a result,.
In addition, with certain one of nozzle N1a, N1b being selected and (setting) selectively to carry out at ejection using nozzle
It manages Pa and sprays processing Pb.That is, the cutting plate 4 comprising cutting off plate 4a, 4b is used for so that grafting material M1 is from nozzle
The plate that the mode that N1a, N1b selectively spray flows grafting material M1.
As discussed above, according to the present embodiment, coating element 20, which has, makes to connect from what syringe 10 supplied
The switching mechanism Mc1 that condensation material M1 is selectively sprayed from nozzle N1a, N1b.Thereby, it is possible to by grafting material from multiple nozzles
Selectively spray.
In addition, according to the present embodiment, relative to 1 syringe 10, installing multiple nozzles together via coating element 20.
In addition, according to the present embodiment, can go out use nozzle from multiple nozzle selections, connect via with 1 syringe 10
The coating element 20 connect sprays grafting material M1 from this using nozzle.That is, allowing hand over the grafting material M1's at each nozzle
The presence or absence of spray.It is therefore not necessary to carry out the replacement of nozzle, it will be able to used the coating of multiple patterns of grafting material.
In addition, according to the present embodiment, only by the cutting plate 4 that can move freely in the horizontal direction (cutting plate 4a,
Movement 4b), it will be able to switch the presence or absence of the ejection of the grafting material M1 at each nozzle.
In addition, in above-mentioned supply method N, in the case where more than the quantity as the component for carrying object, coating figure
Case also becomes more.Therefore, it is necessary to use big flow nozzle.In addition, the stabilisation of the coating amount for cream, common mode is for 1
A nozzle connects 1 syringe.
In addition, in the case where needing to handle multiple application patterns, any one previous for carrying out the following method N1, N2.
In method N1, relative to 1 syringe, to being switched over as using the nozzle of object in multiple nozzles.In addition, in side
In method N2, the structure for being equipped with multiple nozzles in multiple syringes respectively is used.But method N1, N2 there is a problem of it is following.
Firstly, when carrying out the switching of nozzle every time, needing to carry out the replacement of nozzle, with the replacement in method N1
The operations such as parameter correction.Accordingly, there exist in the switching of each nozzle, need this problem of activity duration.
In method N2, due to needing using a large amount of syringes, there is the management due to the service life of each syringe, each
The complication of the stock control of syringe etc. reduces productivity by this problem.
Herein, the semiconductor manufacturing apparatus 100 of present embodiment has above-mentioned switching mechanism Mc1.Therefore, it can solve
Certainly above-mentioned each problem.
1 > of < variation
Hereinafter, the structure of embodiment 1 is also referred to as " structure C t1 ".In addition, hereinafter, the structure of this variation is also referred to as
For " structure C tm1 ".Structure C tm1 is to make to cut off the structure that plate 4 moves in vertical direction.Structure C tm1 is applied to structure
Ct1 (embodiment 1).
Fig. 3 is the oblique view of the appearance for the semiconductor manufacturing apparatus 100 for indicating that variation 1 is related to.Fig. 4 is that variation 1 relates to
And semiconductor manufacturing apparatus 100 a part sectional view.In addition, in Fig. 4, only by main structural element (for example, note
Emitter 10, coating element 20, cutting plate 4) it is illustrated by section.In addition, the main structural element is simple in Fig. 4
Shown in ground.
Referring to Fig. 3 and Fig. 4, in structure C tm1, cutting plate control device 50, which has, makes connection unit 5a, 5b vertical
The function of being moved on direction.Cutting plate 4a is fixed in connection unit 5a.Cutting plate 4b is fixed in connection unit 5b.Therefore,
Cutting plate control device 50 has the function of moving cutting plate 4a, 4b in vertical direction via connection unit 5a, 5b.That is,
In structure C tm1, cutting plate 4 (cutting plate 4a, 4b) is configured to freely to move in vertical direction.Cut off plate 4a, 4b into
Row movement, to selectively cut off path P t1a, Pt1b.
For the state of path P t1a, there are dissengaged positions Sxa and open state Swa.Dissengaged positions Sxa is path
The state that Pt1a is cut off by cutting plate 4a.Open state Swa is the state that path P t1a is not cut off by cutting plate 4a.
For the state of path P t1b, there are dissengaged positions Sxb and open state Swb.Dissengaged positions Sxb is path
The state that Pt1b is cut off by cutting plate 4b.Open state Swb is the state that path P t1b is not cut off by cutting plate 4b.
In structure C tm1, cutting plate control device 50 moves cutting plate 4a, 4b in vertical direction, with selectively
Above-mentioned situation Sa and above-mentioned situation Sb occurs.
In structure C tm1 also in the same manner as embodiment 1, selectively carries out spraying processing Pa and spray processing Pb.
In ejection processing Pa in structure C tm1, cutting plate control device 50 makes to cut off plate 4a, 4b (connection unit 5a, 5b) vertical
It is moved on direction, with situation occurred Sa.The state of path P t1a is set to open state Swa, and the shape of path P t1b as a result,
State is set to dissengaged positions Sxb.Therefore, stop towards the flowing of the non-grafting material M1x using nozzle, direction uses nozzle
The flowing of grafting material M1m do not stop.That is, the cutting plate 4 comprising cutting off plate 4a, 4b is configured to prevent grafting material M1x's
Flowing, and the flowing of grafting material M1m is not prevented.Grafting material M1m is sprayed from nozzle N1a as a result,.
In structure C tm1 ejection processing Pb in, cutting plate control device 50 make cut off plate 4a, 4b (connection unit 5a,
It 5b) moves in vertical direction, with situation occurred Sb.The state of path P t1b is set to open state Swb, and road as a result,
The state of diameter Pt1a is set to dissengaged positions Sxa.Therefore, stop towards the flowing of the non-grafting material M1x using nozzle, court
Do not stop to the flowing for the grafting material M1m for using nozzle.That is, the cutting plate 4 comprising cutting off plate 4a, 4b is configured to prevent engagement
The flowing of material M1x, and the flowing of grafting material M1m is not prevented.Grafting material M1m is sprayed from nozzle N1b as a result,.
In structure C tm1, selectively carries out above-mentioned ejection processing Pa and spray processing Pb.That is, comprising cutting off plate
The cutting plate 4 of 4a, 4b are for so that grafting material M1 makes the engagement material from the mode that nozzle N1a, N1b selectively spray
Expect the plate of M1 flowing.
As discussed above, according to this modification, same effect as that of the first embodiment is obtained.In addition, according to this
Variation, cutting plate 4a, 4b are configured to freely to move in vertical direction.Therefore, the movement of adjoint cutting plate 4a, 4b,
The structure of amount of flow ratio Fig. 2 towards the grafting material M1 using nozzle can be made few.Therefore, it can prevent from sending out at each nozzle
Raw liquid, which hangs down, to drip.
2 > of < variation
Hereinafter, the structure of this variation is also referred to as " structure C tm2 ".Structure C tm2 is to have used dispenser D1a and push rod
Structure.In structure C tm2, push rod is set to coating element 20.By structure C tm2 be applied to structure C t1 (embodiment 1) with
And all or part of structure C tm1 (variation 1).
As an example, the structure C tm1 described below for applying structure C tm2 is (hereinafter also referred to as " structure
Ctm12").Structure C tm12 is the structure that structure C tm2 is applied to the structure of Fig. 4.
Fig. 5 is the sectional view of a part of the semiconductor manufacturing apparatus 100 for the structure C tm12 that there is variation 2 to be related to.?
In structure C tm12, coating element 20 is provided with push rod P1.Push rod P1 is for applying to the grafting material M1 in coating element 20
Stressed component.In Fig. 5, as an example, shows and be provided with the structure of 2 push rod P1 in coating element 20.
Hereinafter, 2 push rod P1 are also referred to as " push rod P1a, P1b ".Push rod P1a is set to the opening in coating element 20
The part of the top of H2a (nozzle N1a).Push rod P1b is set to the top of the opening H2b (nozzle N1b) in coating element 20
Part.
Push rod P1a, P1b are respectively structured as freely moving in vertical direction.Pushrod control device 60 has difference
The function of moving push rod P1a, P1b in vertical direction.Push rod P1a can be to the opening H2a (nozzle in grafting material M1
N1a it is mobile that stressed mode is applied in the part near).Push rod P1b can be to the opening H2b (nozzle in grafting material M1
N1b it is mobile that stressed mode is applied in the part near).
In situation Sa, pushrod control device 60 moves push rod P1a in vertical direction.Thereby, it is possible to
Adjust the amount from the nozzle N1a grafting material M1 sprayed.In addition, pushrod control device 60 makes to push away as needed in situation Sb
Bar P1b is moved in vertical direction.Thereby, it is possible to adjust the amount from the nozzle N1b grafting material M1 sprayed.According to above knot
Structure can prevent that the vertical drop of liquid occurs at each nozzle.
In the unsuitable situation of spray volume of grafting material M1 at each nozzle, pushrod control device 60 as it is above-mentioned that
Sample makes push rod mobile as needed.Thereby, it is possible to adjust the spray volume of the grafting material M1 at each nozzle.
3 > of < variation
Hereinafter, the structure of this variation is also referred to as " structure C tm3 ".Structure C tm3 is the knot for having used 2 dispensers
Structure.Structure C tm3 is applied to structure C t1 (embodiment 1) and all or part of structure C tm1 (variation 1).
As an example, the structure C tm1 described below for applying structure C tm3 is (hereinafter also referred to as " structure
Ctm13").Structure C tm13 is the structure that structure C tm3 is applied to the structure of Fig. 4.
Fig. 6 is the sectional view of a part of the semiconductor manufacturing apparatus 100 for the structure C tm13 that there is variation 3 to be related to.?
In structure C tm13, dispenser D1b is connected with via piping 7b in coating element 20.
Being piped 7b has piping 7ba, 7bb.It is piped the top of the opening H2a (nozzle N1a) in 7ba and coating element 20
Part connects.Piping 7bb is connect with the part of the top of the opening H2b (nozzle N1b) in coating element 20.
Dispenser D1b has the function of that progress air pressure adjustment, air pressure adjustment have used air.Specifically, dispenser
D1b has via piping 7b, applies stressed function to the grafting material M1 in coating element 20 by air.Hereinafter, will drop
It applies device D1b and is applied to the pressure of the grafting material M1 in coating element 20 also referred to as " pressure Pw1b ".Dispenser D1b is to be configured to
The adjustment dispenser that freely pressure Pw1b can be changed.
In situation Sa, dispenser D1b is applied to the opening H2a (nozzle in grafting material M1 to via piping 7ba
N1a the pressure of the part near) is adjusted.Thereby, it is possible to adjust the amount from the nozzle N1a grafting material M1 sprayed.Separately
Outside, in situation Sb, dispenser D1b is to the opening H2b's (nozzle N1b) being applied in grafting material M1 via piping 7bb
The pressure of neighbouring part is adjusted.Thereby, it is possible to adjust the amount from the nozzle N1b grafting material M1 sprayed.According to above
Structure, can prevent at each nozzle occur liquid hang down drop.
2 > of < embodiment
Fig. 7 is the oblique view of the appearance for the semiconductor manufacturing apparatus 100A for indicating that embodiment 2 is related to.Fig. 8 is embodiment party
The sectional view of a part for the semiconductor manufacturing apparatus 100A that formula 2 is related to.In fig. 8, only by main structural element (for example,
Syringe 10, aftermentioned coating element 20A, aftermentioned cutting plate 4A) it is illustrated by section.In addition, in fig. 8, this is main
Structural element briefly show.
Referring to Fig. 7 and Fig. 8, semiconductor manufacturing apparatus 100A is compared with the semiconductor manufacturing apparatus 100 of Fig. 2, not
It is with point, replaces coating element 20 and have coating element 20A, replaces cutting plate control device 50 and have cutting plate control
Device 50A.The structure in addition to this of semiconductor manufacturing apparatus 100A is identical as semiconductor manufacturing apparatus 100, thus omits detailed
Thin explanation.
Details are described below, but coating element 20A is configured to store grafting material M1.Coating element 20A and syringe
10 connections.In addition, being equipped with nozzle N1a, N1b in coating element 20A.
Specifically, coating element 20A includes fills unit 21, nozzle connection unit 22 and connection unit 23.Filling
Unit 21 is the container for storing grafting material M1.Fills unit 21 is connect with the opening H1 of syringe 10.10 structure of syringe
Grafting material M1 is supplied as from opening H1 to fills unit 21.In addition, fills unit 21 has the opening H21 as through-hole.
The shape of nozzle connection unit 22 is discoid.Nozzle connection unit 22 is via connection unit 23 and fills unit 21
Connection.
Nozzle connection unit 22 has center c2.Nozzle connection unit 22 be provided with the opening H2Aa as through-hole,
H2Ab.The dimension and shape of opening H2Aa is identical as the opening dimension and shape of H2Ab.It is from center c2 to opening H2Aa
Distance only and being equidistant until from center c2 to the H2Ab that is open.
In addition, being equipped with nozzle N1a, N1b in nozzle connection unit 22.Nozzle N1a is connect with opening H2Aa.Nozzle N1a
The grafting material M1 for being configured to have passed through opening H2Aa sprays.Nozzle N1b is connect with opening H2Ab.Nozzle N1b be configured to by
The grafting material M1 that have passed through opening H2Ab sprays.Distance until from center c2 to nozzle N1a with from center c2 to nozzle N1b
Until be equidistant.
Coating element 20A has switching mechanism Mc1A.Details are described below, but switching mechanism Mc1A makes from syringe 10
The grafting material M1 of supply is selectively sprayed from nozzle N1a, N1b.Switching mechanism Mc1A has cutting plate 4A.Cut off plate 4A's
Shape is discoid.Cutting plate 4A is configured to cover the major part of the opening H21 of fills unit 21.
In addition, being provided with the opening H4 as through-hole in cutting plate 4A.At overlook view (face XY), from center c2 to opening
Distance until mouth H4 and being equidistant until from center c2 to the H2Ab that is open.In addition, the diameter of opening H4 is greater than or equal to
The diameter of opening H2Aa.In addition, the shape of opening H4 is that grafting material M1 is easy to shape in the internal flow of opening H4.
Cutting plate control device 50A has the function of rotating connection unit 5c.The component that connection unit 5c is bar-like.This
Outside, fills unit 21 is configured to surround a part of connection unit 5c.Fills unit 21 is annularly shaped.Therefore, filling is single
Member 21 has cricoid space S P1.Space S P1 is the space for storing grafting material M1.
In addition, the center of cutting plate 4A is fixed in an end of connection unit 5c.Therefore, plate control device 50A is cut off
With the function of making cutting plate 4A rotation via connection unit 5c.That is, cutting plate 4A is configured to be freely rotatable.Cut off plate 4A
It is rotated, so that opening H4 is connect with one in opening H2Aa, H2Ab.That is, cutting plate 4A is rotated, so that opening
Mouth H2Aa, H2Ab are selectively blocked.
Hereinafter, by it is being used to flow for grafting material M1, from the opening H1 of syringe 10 until being open H2Aa
Path is also referred to as " path P t2a ".In addition, hereinafter, by opening being used to flow for grafting material M1, from syringe 10
Path until H1 to the H2Ab that is open is also referred to as " path P t2b ".
For the state of path P t2a, there are dissengaged positions SxAa and open state SwAa.Dissengaged positions SxAa is road
The state that diameter Pt2a is cut off by cutting plate 4A.In addition, open state SwAa is the state that path P t2a is not cut off by cutting plate 4A.
That is, open state SwAa is turned off the state that the opening H4 of plate 4A is connect with opening H2Aa.Fig. 8 shows open state SwAa's
Structure.
For the state of path P t2b, there are dissengaged positions SxAb and open state SwAb.Dissengaged positions SxAb is road
The state that diameter Pt2b is cut off by cutting plate 4A.In addition, open state SwAb is the state that path P t2b is not cut off by cutting plate 4A.
That is, open state SwAb is turned off the state that the opening H4 of plate 4A is connect with opening H2Ab.
Hereinafter, being open state SwAa by the state of path P t2a, and the state of path P t2b is dissengaged positions SxAb's
Situation is also referred to as " situation SAa ".In addition, hereinafter, being open state SwAb, and the state of path P t2a by the state of path P t2b
" situation SAb " is also referred to as the situation of dissengaged positions SxAa.
Cutting plate control device 50A makes to cut off plate 4A rotation, with selectively situation occurred SAa and situation SAb.
Dispenser D1a changes pressure Pw1, so as to coating element 20A, (filling is single by grafting material M1 for syringe 10
21) member supplies.Grafting material M1 is flowed due to pressure Pw1 to coating element 20A (fills unit 21).
It is open state SwAa in the state of path P t2a, and the state of path P t2b is dissengaged positions SxAb, that is, occur
In the case where situation SAa, nozzle N1a sprays the grafting material M1 in fills unit 21.It is to open in the state of path P t2b
State SwAb is put, and the state of path P t2a is dissengaged positions SxAa, that is, in the case where situation SAb has occurred, nozzle N1b will
Grafting material M1 in fills unit 21 sprays.
Hereinafter, by it is in the grafting material M1 in fills unit 21, towards the non-grafting material M1 using nozzle one
Part is also referred to as " grafting material M1x ".In addition, hereinafter, in the grafting material M1 in fills unit 21, direction is used nozzle
Grafting material M1 another part be also referred to as " grafting material M1m ".
(movement)
Next, being illustrated to the movement of semiconductor manufacturing apparatus 100A.Here, consider premise Pm3 below.Preceding
It mentions in Pm3, carries out the ejection processing PAa for spraying grafting material M1 from nozzle N1a.That is, in premise Pm3, nozzle N1a
It is using nozzle, nozzle N1b is non-using nozzle.In addition, there are grafting material M1 in fills unit 21 in premise Pm3.
In addition, dispenser D1a changes pressure Pw1 in premise Pm3, so that from using nozzle to spray grafting material M1.
In spraying processing PAa, cutting plate control device 50A makes to cut off plate 4A rotation, with situation occurred SAa.Road as a result,
The state of diameter Pt2a is set to open state SwAa, and the state of path P t2b is set to dissengaged positions SxAb.
Therefore, stop towards the flowing of the non-grafting material M1x using nozzle, towards the grafting material M1m for using nozzle
Flowing do not stop.That is, cutting plate 4A is configured to prevent the flowing of grafting material M1x, and the stream of grafting material M1m is not prevented
It is dynamic.In addition, the opening H4 of cutting plate 4A works as the opening for not preventing the flowing of grafting material M1m.It connects as a result,
Condensation material M1m is sprayed from nozzle N1a.
Next, considering premise Pm4 below.In premise Pm4, carry out for spraying grafting material M1 from nozzle N1b
Ejection out handles PAb.That is, in premise Pm4, nozzle N1b is using nozzle, and nozzle N1a is non-to use nozzle.In addition,
In premise Pm4, there are grafting material M1 in fills unit 21.In addition, dispenser D1a becomes pressure Pw1 in premise Pm4
Change, so that from using nozzle to spray grafting material M1.
In spraying processing PAb, cutting plate control device 50A makes to cut off plate 4A rotation, with situation occurred SAb.Road as a result,
The state of diameter Pt2b is set to open state SwAb, and the state of path P t2a is set to dissengaged positions SxAa.
Therefore, stop towards the flowing of the non-grafting material M1x using nozzle, towards the grafting material M1m for using nozzle
Flowing do not stop.That is, cutting plate 4A is configured to prevent the flowing of grafting material M1x, and the stream of grafting material M1m is not prevented
It is dynamic.Grafting material M1m is sprayed from nozzle N1b as a result,.
In addition, selecting and (setting) selectively to carry out at ejection using nozzle with by any one of nozzle N1a, N1b
It manages PAa and sprays processing PAb.That is, cutting plate 4A is for so that grafting material M1 is selectively sprayed from nozzle N1a, N1b
The plate that mode out flows grafting material M1.
As discussed above, according to the present embodiment, same effect as that of the first embodiment is obtained.For example, can
Go out to use nozzle from multiple nozzle selections, via the coating element 20A being connect with 1 syringe 10, by grafting material M1 from this
It is sprayed using nozzle.That is, allowing hand over the presence or absence of the ejection of the grafting material M1 at each nozzle.
In addition, in the structure of embodiment 1, needing to increase and cut in the case where the quantity of the nozzle used in increasing
The driving mechanism of disconnected plate and the cutting plate.But in the present embodiment, even if increasing the quantity of used nozzle
In the case of, do not need the driving mechanism for increasing cutting plate and the cutting plate yet.In addition, in the present embodiment, by cutting
The rotation of disconnected plate is controlled, so as to carry out the switching using nozzle for multiple nozzles.Therefore, in present embodiment
In, the design for the structure for using big flow nozzle can be simplified.
4 > of < variation
Hereinafter, the structure of embodiment 2 is also referred to as " structure C t2 ".In addition, hereinafter, the structure of this variation is also referred to as
For " structure C tm4 ".Structure C tm4 is the structure for having used dispenser D1a and push rod.It is (real that structure C tm4 is applied to structure C t2
Apply mode 2).
Fig. 9 is the sectional view of a part of the semiconductor manufacturing apparatus 100A for the structure C tm4 that there is variation 4 to be related to.?
In structure C tm4, coating element 20A is provided with push rod P1.Specifically, the fills unit 21 in coating element 20A is provided with
Push rod P1.Push rod P1 in structure C tm4 is for applying stressed component to the grafting material M1 in fills unit 21.In addition,
The structure and function of the push rod P1 of the structure and function and variation 2 of push rod P1 is identical.
Push rod P1 is configured to freely to move in vertical direction.Pushrod control device 60, which has, makes push rod P1 vertical
The function of being moved on direction.In structure C tm4, in the same manner as variation 2, pushrod control device 60 makes push rod P1 as needed
It moves in vertical direction.Effect same as variation 2 is obtained as a result,.That is, can adjust from nozzle N1a or nozzle N1b
The amount of the grafting material M1 of ejection.Therefore, it can prevent that the vertical drop of liquid occurs at each nozzle.
5 > of < variation
Hereinafter, the structure of this variation is also referred to as " structure C tm5 ".Structure C tm5 is the knot for having used 2 dispensers
Structure.Structure C tm5 is applied to structure C t2 (embodiment 2).
Figure 10 is the sectional view of a part of the semiconductor manufacturing apparatus 100A for the structure C tm5 that there is variation 5 to be related to.
In structure C tm5, dispenser D1b is connected with via piping 7c in coating element 20A.Specifically, coating element 20A's
Fills unit 21 is connected with dispenser D1b via piping 7c.
In structure C tm5, dispenser D1b has via piping 7c, by air to the grafting material in fills unit 21
M1 applies stressed function.Hereinafter, the grafting material M1 dispenser D1b in structure C tm5 being applied in fills unit 21
Pressure is also referred to as " pressure Pw1b ".Dispenser D1b is configured to freely to change pressure Pw1b.
In structure C tm5, in the same manner as variation 3, in situation SAa or situation SAb, dispenser D1b is to via matching
Pipe 7c and the pressure Pw1b of grafting material M1 being applied in fills unit 21 are adjusted.It obtains as a result, same as variation 3
Effect.That is, the amount from the nozzle N1a or nozzle N1b grafting material M1 sprayed can be adjusted.Therefore, it can prevent each
The vertical drop of liquid occurs at nozzle.
In addition, the present invention can be such that each embodiment, each variation is freely combined in the range of the invention, or
Person is suitably deformed each embodiment, each variation, omits.
For example, the type of the nozzle used in embodiment 1, embodiment 2, the respective structure of variation 1 to 5
(quantity) is 2 but it is also possible to be more than or equal to 3.
Claims (8)
1. a kind of semiconductor manufacturing apparatus, has:
1 syringe supplies the grafting material with mobility；And
Coating element is connect with the syringe,
Multiple nozzles are installed in the coating element,
The coating element has switching mechanism, which makes the grafting material supplied from the syringe from described
Spray to multiple nozzle selections.
2. semiconductor manufacturing apparatus according to claim 1, wherein
The switching mechanism has cutting plate, which is used for so that the grafting material is from the multiple nozzle selection
The mode that ground sprays flows the grafting material.
3. semiconductor manufacturing apparatus according to claim 2, wherein
The multiple nozzle includes used in the ejection of the grafting material using nozzle and without for the grafting material
The non-of ejection uses nozzle,
The cutting plate is configured to prevent the flowing of a part towards the non-grafting material using nozzle, and does not hinder
Only towards the flowing of another part of the grafting material using nozzle.
4. semiconductor manufacturing apparatus according to claim 3, wherein
The cutting plate is configured to freely to move in the horizontal direction.
5. semiconductor manufacturing apparatus according to claim 3, wherein
The cutting plate is configured to freely to move in vertical direction.
6. semiconductor manufacturing apparatus according to claim 3, wherein
The cutting plate is configured to be freely rotatable,
The cutting plate is provided with opening, which is used to not prevent the flowing of described another part of the grafting material.
7. semiconductor manufacturing apparatus according to any one of claim 1 to 6, wherein
The coating element is configured to store the grafting material,
The coating element is provided with push rod, which is used to apply pressure to the grafting material.
8. semiconductor manufacturing apparatus according to any one of claim 1 to 6, wherein
The coating element is configured to store the grafting material,
It is connected with dispenser in the coating element, which, which has, applies stressed function to the grafting material,
The dispenser is configured to freely to change the pressure for being applied to the grafting material.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018039665A JP7045882B2 (en) | 2018-03-06 | 2018-03-06 | Semiconductor manufacturing equipment |
| JP2018-039665 | 2018-03-06 |
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|---|---|
| CN110233120A true CN110233120A (en) | 2019-09-13 |
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| CN201910156782.0A Pending CN110233120A (en) | 2018-03-06 | 2019-03-01 | Semiconductor manufacturing apparatus |
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| JP (1) | JP7045882B2 (en) |
| CN (1) | CN110233120A (en) |
| DE (1) | DE102019202490A1 (en) |
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|---|---|---|---|---|
| CN111570195A (en) * | 2020-05-18 | 2020-08-25 | 深圳市华星光电半导体显示技术有限公司 | Encapsulation point gum machine constructs |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102471125B1 (en) * | 2021-10-05 | 2022-11-25 | 유명근 | Insertion pressure module for paste dispensers |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49117350U (en) * | 1973-02-09 | 1974-10-07 | ||
| JP2002361147A (en) * | 2001-06-01 | 2002-12-17 | Matsushita Electric Ind Co Ltd | Application apparatus for viscous liquid |
| JP2012109581A (en) * | 2011-12-19 | 2012-06-07 | Mitsubishi Electric Corp | Semiconductor manufacturing method and semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6095977A (en) | 1983-10-31 | 1985-05-29 | Toshiba Corp | Photovoltaic device |
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2018
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2019
- 2019-02-25 DE DE102019202490.4A patent/DE102019202490A1/en active Pending
- 2019-03-01 CN CN201910156782.0A patent/CN110233120A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49117350U (en) * | 1973-02-09 | 1974-10-07 | ||
| JP2002361147A (en) * | 2001-06-01 | 2002-12-17 | Matsushita Electric Ind Co Ltd | Application apparatus for viscous liquid |
| JP2012109581A (en) * | 2011-12-19 | 2012-06-07 | Mitsubishi Electric Corp | Semiconductor manufacturing method and semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111570195A (en) * | 2020-05-18 | 2020-08-25 | 深圳市华星光电半导体显示技术有限公司 | Encapsulation point gum machine constructs |
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| Publication number | Publication date |
|---|---|
| JP2019153745A (en) | 2019-09-12 |
| DE102019202490A1 (en) | 2019-09-12 |
| JP7045882B2 (en) | 2022-04-01 |
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