CN110212872A - Microwave amplifier and its implementation - Google Patents
Microwave amplifier and its implementation Download PDFInfo
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- CN110212872A CN110212872A CN201910604006.2A CN201910604006A CN110212872A CN 110212872 A CN110212872 A CN 110212872A CN 201910604006 A CN201910604006 A CN 201910604006A CN 110212872 A CN110212872 A CN 110212872A
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- matching network
- junctions
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- containing hetero
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
A kind of microwave amplifier and its implementation, belong to quantum mechanics, Semiconductor Physics, electronics technology.The polariton in the transistor containing hetero-junctions is energized into high level by pumped microwave, utilize chain effect of input signal during energy level transition, so that the polariton for being excited to high level is transitted to the specified energy level in energy level region downwards, realizes the amplification of input signal power.The present invention efficiently solves the crosstalk of direct current biasing amplifier bias circuit, circuit trace requires high, DC voltage ripple interference and maser amplifier operating environment requirements are harsh, bulky, complex process, the problems such as with high costs, microwave amplifier is realized by using the transistor of general semiconductor technique production, the amplifier architecture is simple, operating temperature requirements are low, the form that its pump power can be radiated with space provides, and has considerable flexibility.
Description
Technical field
The invention belongs to quantum mechanics, Semiconductor Physics, electronics technology, and in particular to a kind of microwave amplifier and
Its implementation.
Background technique
Amplifier is the basic device in electronics, major function be the power of pumping signal is amplified it is rear defeated
Out.Under normal circumstances, frequency microwave amplifier is mostly realized by transistor, which needs to introduce direct current, it is therefore intended that
It is to convert DC energy to microwave energy for energy point of view by transistor biasing in amplification region, and DC bias circuit
Introducing often will cause the crosstalk between device and device, between module and module, it is more difficult to remove this crosstalk, simultaneously
Since there are certain fluctuations for direct current, this can introduce additional noise.In the case where noise perfomiance requirements are high, it is often used
It works in the crystal amplifier of extremely low temperature.The acquisition of low temperature environment is so that the class A amplifier A complexity, cost, volume, again
Amount and power consumption steeply rise, and greatly limit its application range.On the other hand, the maser for not using DC energy to convert at present is put
Big device is since its splendid noiseproof feature is using ruby maser realization [Deep Space Network low noise system], since it is with extremely low
Noise temperature, commonly used in the receiving front-end of deep space instrumentation system (DSIS), but the class A amplifier A is needed at low temperature environment (< 4.5K)
Work, and additional high-intensity magnetic field is also needed, structure is complicated, and bulky, higher cost, application range is extremely limited.
Summary of the invention
In order to solve the dependence of crosstalk and low-noise amplifier to low temperature environment existing for existing direct current biasing amplifier, this
Invention proposes a kind of microwave amplifier and its implementation, is swashed the polarization in the transistor containing hetero-junctions by pumped microwave
Member is energized into high level, using chain effect of input signal during energy level transition, makes the polarization for being excited to high level
Excimer transits to downwards the specified energy level in energy level region, realizes the amplification of input signal power.
The technical solution adopted by the invention is as follows:
A kind of reflection type microwave amplifier, as shown in Fig. 3 (a), including circulator, source electrode matching network, pumping pair net
Network, transistor and tuning network containing hetero-junctions；Wherein, the circulator and input, output end, source electrode matching network input
End is connected, and source electrode matching network output end is connected with the transistor source containing hetero-junctions, and the transistor gate containing hetero-junctions passes through
Tuning network ground connection, the pumping matching network are connected with the transistor drain containing hetero-junctions；
Input signal enters source electrode matching network through circulator, crystalline substance of the feed-in containing hetero-junctions after the matching of source electrode matching network
Body pipe；After pumping matching network, transistor of the feed-in containing hetero-junctions makes in the transistor energy level containing hetero-junctions pumped microwave
Polariton is energized into high level, and tuning network adjusts its resonance frequency according to the frequency of required amplified signal, so that input letter
Number maximum amplification times yield can be obtained in the case where low noise；Amplified signal is after source electrode matching network, through circulator
Output port output, realize the amplification of input signal power.
Wherein, the resonance frequency of tuning network is determined according to required amplified signal frequency.
One kind is by the twt amplifier that declines, as shown in Fig. 3 (b), including input matching network, the transistor containing hetero-junctions,
Drain matching network, tuning network, duplexer, pumping matching network and output matching network；The input matching network with contain
The transistor source of hetero-junctions is connected, and the transistor gate containing hetero-junctions is grounded by tuning network, drain electrode and drain electrode pair net
Network one end is connected；The drain electrode matching network other end is connected with total mouth of duplexer, and two points of mouths of the duplexer are distinguished
It is connected with pumping matching network and output matching network；
Input signal is after input matching network matches, transistor of the feed-in containing hetero-junctions；Pumped microwave is matched through pumping
After network, transistor of the feed-in containing hetero-junctions makes the polariton in the transistor energy level containing hetero-junctions be energized into high level；It adjusts
Humorous network adjusts its resonance frequency according to the frequency of required amplified signal, so that being excited to the polariton of high level to by adjusting
The specified low energy order transition of the resonance frequency of humorous network, outside radiation energy；Simultaneously because the influence of frequency input signal, is swashed
The polariton of high level is dealt into during specified energy level transition, stable stimulated radiation is will form, i.e., is obtained under low noise
Obtain the amplification of signal；Amplified signal is exported by output matching network.
Wherein, the resonance frequency of tuning network is determined according to required amplified signal frequency.
Wherein, pumped microwave includes the feed-in form of antenna reception space radiation energy or microwave transmission line.
Further, the transistor containing hetero-junctions can be Heterojunction Bipolar Transistors or field-effect tube
(FET) etc.；Wherein, the field-effect tube can be Metal-Oxide Semiconductor field effect transistor (MOSFET) or high electricity
Transport factor transistor (HEMT).
One kind provided by the invention is reflective and by the twt amplifier that declines, and is pumped by microwave by the crystal containing hetero-junctions
Polariton in pipe energy level is energized into high level.Specifically, a large amount of polariton transits to height under pumped microwave excitation
Energy level, the specified energy level of the resonance frequency that tuning network can be transitted in maximum probability positioned at the polariton of the energy level, in frequency
Rate is under the guidance of f input signal, and transitting to the high level energy difference is hfLow-lying level (i.e. specified energy level), release with
Frequency input signal and the identical electromagnetic wave of phase.With the raising of pumped microwave power, the polariton for participating in transition is more next
It is more, when the electromagnetic wave energy that the polariton for transitting to low-lying level from high level discharges is greater than the energy and electricity that transistor absorbs
When the energy of path loss consumption, that is, it is able to achieve the amplification to input signal.The power regulation that the gain of amplifier is pumped by microwave.
Compared with prior art, the invention has the benefit that
The present invention provides a kind of microwave amplifiers, efficiently solve the crosstalk of direct current biasing amplifier bias circuit, circuit
Cabling require high, DC voltage ripple interference and maser amplifier operating environment requirements are harsh, bulky, complex process,
The problems such as with high costs realize microwave amplifier, the amplifier architecture by using the transistor of general semiconductor technique production
Simply, operating temperature requirements are low, and the form that pump power can be radiated with space provides, and have considerable flexibility.
Detailed description of the invention
Fig. 1 is existing direct current biasing amplifier schematic diagram；
Fig. 2 is existing ruby maser amplifier schematic diagram；
Fig. 3 (a) is reflection type microwave amplifier schematic diagram of the invention；
Fig. 3 (b) passes through the twt amplifier schematic diagram that declines to be of the invention；
Fig. 4 is the working principle diagram of microwave amplifier of the invention；
Fig. 5 is the measured curve of microwave amplifier of the present invention vector network analyzer under different pump powers.
Specific embodiment
For convenient for those skilled in the art understand that technology contents of the invention, with reference to the accompanying drawing to the content of present invention into one
Step is illustrated.
It is reflection type microwave amplifier schematic diagram of the invention as shown in Fig. 3 (a)；Including circulator, source electrode pair net
Network, pumping matching network, transistor and tuning network containing hetero-junctions；Wherein, the circulator and input, output end, source
Pole matching network input terminal is connected, and source electrode matching network output end is connected with the transistor source containing hetero-junctions, containing hetero-junctions
Transistor gate is grounded by tuning network, and the pumping matching network is connected with the transistor drain containing hetero-junctions.Input letter
Number from a port of circulator input, amplified signal from another port of circulator export.
Wherein, the purpose of source electrode matching network is to realize the matching of circulator output impedance and transistor source impedance, will
The microwave signal of required amplification more efficiently feed-in transistor, and amplified microwave signal is more efficiently fed to circulator.
It pumps matching network and realizes the impedance matching of drain impedance to antenna or transmission line, to efficiently utilize pump energy.Tuning
The effect of network is the controllable of realization resonance frequency, to achieve the purpose that adjust amplifier operation frequency.
As shown in Fig. 3 (b), pass through the twt amplifier schematic diagram that declines to be of the invention；Including input matching network, containing heterogeneous
Transistor, drain electrode matching network, tuning network, duplexer, pumping matching network and the output matching network of knot；The input
Distribution network is connected with the transistor source containing hetero-junctions, the transistor gate containing hetero-junctions by tuning network be grounded, drain electrode with
Drain electrode matching network one end is connected；The drain electrode matching network other end is connected with total mouth of duplexer, and the two of the duplexer
A point of mouth is connected with pumping matching network and output matching network respectively.Input signal initially enters input matching network, amplification
Signal afterwards is exported through output matching network.
Wherein, the purpose of input matching network is to realize that the matching of sending-end impedance and transistor source impedance is put required
The more efficient feed-in transistor of big microwave signal.The matching network that drains realizes the impedance matching of drain impedance to duplexer, protects
Effective transmission and the spectral response of duplexer for hindering amplified signal are good.Pumping matching network realizes duplexer to antenna or transmission
The impedance matching of line, to efficiently utilize pump energy.The resistance of duplexer and late-class circuit or transmission line is realized in output matching
Anti- matching.The effect of tuning network is the controllable of realization resonance frequency, to achieve the purpose that adjust amplifier operation frequency.
For the working principle of microwave amplifier of the present invention as shown in figure 4, under pumped microwave excitation, polariton transits to height
Energy level, positioned at the energy level polariton can maximum probability transit to the energy level specified by tuning network resonance frequency, while in frequency
Rate is that can transit to low-lying level that the high level energy difference is hf (i.e. by tuning network resonance frequency under the guidance of f input signal
The specified energy level of rate), release electromagnetic wave identical with frequency input signal and phase.With the raising of pumped microwave power,
The polariton for participating in transition is more and more, when the electromagnetic wave energy that the polariton for transitting to low-lying level from high level discharges is big
When the energy of energy and circuit loss that transistor absorbs, that is, it is able to achieve the amplification to input signal.The gain of amplifier by
The power regulation of microwave pumping.
Fig. 5 is the measured curve of microwave amplifier of the present invention vector network analyzer under different pump powers；It can by Fig. 5
Know, when pump power is -32.0dBm, device no gain at 70MHz, and relaxation phenomenon is presented；When pump power be-
When 21.5dBm, device no gain at 70MHz, also undamped phenomenon；When pump power is -19.6dBm, device exists
Gain reaches 12.4dB at 70MHz；When pump power is -18.9dBm, device gain at 70MHz reaches 31.2dB；Thus may be used
Know, by controlling pump power, enlarge-effect may be implemented, and amplification quantity is controllable.
Microwave amplifier of the invention has simple structure, room temperature realization, can work without high-intensity magnetic field, without direct current biasing
The characteristics of；It can be widely applied to the fields such as medicine, safety, sensing, quantum techniques and electronics.
Those of ordinary skill in the art will understand that the embodiments described herein, which is to help reader, understands this hair
Bright principle, it should be understood that protection scope of the present invention is not limited to such specific embodiments and embodiments.For ability
For the technical staff in domain, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made
Any modification, equivalent substitution, improvement and etc. should be included within scope of the presently claimed invention.
Claims (4)
1. a kind of reflection type microwave amplifier including circulator, source electrode matching network, pumps matching network, containing the crystalline substance of hetero-junctions
Body pipe and tuning network；Wherein, the circulator is connected with input, output end, source electrode matching network input terminal, source electrode matching
Network output is connected with the transistor source containing hetero-junctions, and the transistor gate containing hetero-junctions is grounded by tuning network, institute
Pumping matching network is stated to be connected with the transistor drain containing hetero-junctions；
Input signal enters source electrode matching network through circulator, crystal of the feed-in containing hetero-junctions after the matching of source electrode matching network
Pipe；For pumped microwave after pumping matching network, transistor of the feed-in containing hetero-junctions makes the pole in the transistor energy level containing hetero-junctions
Change excimer and be energized into high level, tuning network adjusts its resonance frequency, and the polariton for being excited to high level is made to transit to finger
Surely grade realizes the amplification of input signal；For amplified signal after source electrode matching network, the output port through circulator is defeated
Out, the amplification of input signal power is realized.
2. reflection type microwave amplifier according to claim 1, which is characterized in that the resonance frequency root of the tuning network
It is determined according to required amplified signal frequency.
3. it is a kind of by the twt amplifier that declines, including input matching network, the transistor containing hetero-junctions, drain electrode matching network, adjust
Humorous network, duplexer, pumping matching network and output matching network；The input matching network and the source transistor containing hetero-junctions
Extremely it is connected, the transistor gate containing hetero-junctions is grounded by tuning network, and drain electrode is connected with drain electrode matching network one end；The leakage
The pole matching network other end is connected with total mouth of duplexer, two points of mouths of the duplexer respectively with pumping matching network and defeated
Matching network is connected out；
Input signal is after input matching network matches, transistor of the feed-in containing hetero-junctions；Pumped microwave is through pumping matching network
Afterwards, transistor of the feed-in containing hetero-junctions makes the polariton in the transistor energy level containing hetero-junctions be energized into high level；Tune net
Network adjusts its resonance frequency, and the polariton for being excited to high level is made to transit to specified energy level, realizes the amplification of input signal；
Amplified signal is exported by output matching network.
4. according to claim 3 pass through the twt amplifier that declines, which is characterized in that the resonance frequency root of the tuning network
It is determined according to required amplified signal frequency.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910604006.2A CN110212872B (en) | 2019-07-05 | 2019-07-05 | Microwave amplifier and implementation method thereof |
| US16/920,781 US11815588B2 (en) | 2019-07-05 | 2020-07-06 | Room-temperature semiconductor maser and applications thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910604006.2A CN110212872B (en) | 2019-07-05 | 2019-07-05 | Microwave amplifier and implementation method thereof |
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| CN110212872A true CN110212872A (en) | 2019-09-06 |
| CN110212872B CN110212872B (en) | 2023-08-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113169762A (en) * | 2021-04-19 | 2021-07-23 | 华为技术有限公司 | Communication device and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113169762A (en) * | 2021-04-19 | 2021-07-23 | 华为技术有限公司 | Communication device and method |
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