CN210986048U - Millimeter wave frequency multiplier based on IMPATT diode - Google Patents
Millimeter wave frequency multiplier based on IMPATT diode Download PDFInfo
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- CN210986048U CN210986048U CN201921833528.1U CN201921833528U CN210986048U CN 210986048 U CN210986048 U CN 210986048U CN 201921833528 U CN201921833528 U CN 201921833528U CN 210986048 U CN210986048 U CN 210986048U
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- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000010355 oscillation Effects 0.000 description 4
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- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
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Abstract
The utility model discloses a millimeter wave frequency multiplier based on IMPATT diode, including DB9 connector, the input of DB9 connector is power source, and the output of DB9 connector connects gradually preamplifier, IMPATT diode, waveguide isolator, band-pass filter, circulator and waveguide, is connected with outside synchro-amplifier between the output of DB9 connector two and the circulator; the input signal enters the frequency multiplier from the preamplifier, and is output from the waveguide after being amplified and converted by the frequency multiplier. The utility model discloses a millimeter wave frequency multiplier is constituteed to IMPATT diode, makes the doubling of frequency take place in the non-linear stage of avalanche, has improved the conversion efficiency of signal.
Description
Technical Field
The utility model belongs to the technical field of millimeter wave wireless communication, a millimeter wave frequency multiplier based on IMPATT diode is related to.
Background
A frequency multiplier is a circuit that makes the output signal frequency equal to an integer multiple of the input signal frequency. When the input frequency is f0Then the output frequency is f1＝nf0The coefficient n is any positive integer called the frequency multiplication number. The frequency multiplier has wide application, for example, after the frequency multiplier is adopted by a transmitter, the main oscillator can oscillate at a lower frequency band so as to improve the frequency stability; the frequency modulation device increases frequency offset by a frequency multiplier; in a phase-keying communication machine, a frequency multiplier is an important component of a carrier recovery circuit.
Millimeter wave communication is one of the main frequency bands of communication development at home and abroad in recent years, with the gradual maturity of millimeter wave active devices, the millimeter wave radar for fire control and guidance at home is also rapidly developed, and a millimeter wave frequency multiplier has a wide application prospect as an important component of a millimeter wave frequency source, but the existing millimeter wave frequency multiplier has low signal conversion efficiency, and the frequency multiplication frequency can only reach 2-3 generally.
An IMPATT diode, i.e., an avalanche diode, is a solid-state microwave device that utilizes both the physical effects of impact ionization and transit time of carriers in a semiconductor structure to create negative resistance.
The IMPATT diode can generate high-frequency oscillation under the action of an external voltage, the working principle of generating the high-frequency oscillation is that avalanche breakdown is utilized to inject carriers into a crystal, the current lags behind the voltage due to the fact that a certain time is needed for the carriers to transit through a wafer, delay time occurs, and if the transit time is properly controlled, negative resistance effect occurs on the relationship between the current and the voltage, so that the high-frequency oscillation is generated.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a millimeter wave frequency multiplier based on IMPATT diode makes the doubling of frequency take place in the nonlinear stage of avalanche, has improved the conversion efficiency of signal.
The technical scheme adopted by the utility model is that, a millimeter wave frequency multiplier based on IMPATT diode, including preamplifier, IMPATT diode, waveguide isolator, band-pass filter, circulator and waveguide that connect gradually, preamplifier connects with DB9 connector output end one, is connected with outside synchronous amplifier between DB9 connector output end two and the circulator; the input signal enters the frequency multiplier from the preamplifier, and is output from the waveguide after being amplified and converted by the frequency multiplier.
The utility model is also characterized in that,
wherein, a voltage stabilizing circuit U is arranged between the first output end of the DB9 connector and the preamplifier1After the DB9 connector is powered on, and after the DB9 connector is powered on, the voltage stabilizing circuit U1The preamplifier is supplied with a +5V supply voltage.
A voltage stabilizing circuit U is arranged between the second output end of the DB9 connector and the IMPATT diode2After the DB9 connector is powered on, the voltage stabilizing circuit U2Providing +24V to the IMPATT diode.
A voltage stabilizing circuit U is connected between the second output end of the DB9 connector and the external synchronous amplifier3After the DB9 connector is powered on, the voltage stabilizing circuit U3The external synchronous amplifier is supplied with a +24V supply voltage.
The IMPATT diode is integrated in the waveguide resonant cavity and is externally connected with a bias circuit. The waveguide port has a length of 2.4mm and a height of 1.2 mm.
The frequency multiplier also comprises a substrate, and the DB9 connector, the preamplifier, the waveguide isolator, the band-pass filter, the circulator and the waveguide are fixed on the substrate through fixing pieces and screws.
And metal gaskets for reducing interface loss are arranged among the interfaces of the DB9 connector, the preamplifier, the waveguide isolator, the band-pass filter, the circulator and the waveguide.
The beneficial effects of the utility model are that, adopt preamplifier, IMPATT diode, waveguide isolator, band-pass filter, outside synchronous amplifier, circulator and waveguide to constitute the millimeter wave frequency multiplier, the input signal gets into the frequency multiplier from preamplifier, through the output from the waveguide after the amplification conversion, adopt IMPATT diode to make the doubling of frequency take place in the avalanche nonlinear stage, improved the efficiency of signal conversion, make the doubling of frequency number reach 8; the band-pass filter is adopted to ensure that the harmonic component level of the output signal frequency spectrum is not more than-40 dBc, and the external synchronous amplifier is adopted to ensure that the non-harmonic component level of the output signal frequency spectrum is not more than-70 dBm, thereby ensuring the high accuracy and reliability of the output signal.
Drawings
Fig. 1 is a schematic circuit diagram of a millimeter wave frequency multiplier based on an IMPATT diode according to the present invention;
fig. 2 is a schematic structural diagram of a millimeter wave frequency multiplier based on an IMPATT diode according to the present invention;
fig. 3 is a schematic diagram of the output frequency-output power of the millimeter wave frequency multiplier according to the embodiment of the present invention.
In the figure, 1, a substrate, 2, a DB9 connector, 3, a preamplifier, 4, a waveguide isolator, 5, a band-pass filter, 6, a circulator, 7, an external synchronous amplifier, 8, a waveguide, 9, a power supply circuit U 110. power supply circuit U 211. power supply circuit U3An IMPATT diode.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings and specific embodiments.
The utility model relates to a millimeter wave frequency multiplier based on IMPATT diode, refer to fig. 1 and fig. 2, including base plate 1 and DB9 connector 2, DB9 connector 2's input is power source, and DB9 connector 2's output connects gradually preamplifier 3, IMPATT diode 12, waveguide isolator 4, band-pass filter 5, circulator 6 and waveguide 8, is connected with outside synchronous amplifier 7 between DB9 connector 2's output two and circulator 6; the input signal is input to the frequency multiplier through the preamplifier 3, amplified and converted by the frequency multiplier, and then output from the waveguide 8.
The DB9 connector 2, the preamplifier 3, the waveguide isolator 4, the band-pass filter 5, the circulator 6, the external synchronous amplifier 7 and the waveguide 8 are all fixed on the substrate 1 through fixing pieces and screws, the length of a waveguide port is 2.4mm, the height of the waveguide port is 1.2mm, the length and the width of the frequency multiplier are 110mm, and the height of the frequency multiplier is 29 mm.
A voltage stabilizing circuit U is arranged between the first output end (pin 3) of the DB9 connector 2 and the preamplifier 319, after the DB9 connector 2 is powered on, the voltage stabilizing circuit U 19 provide +5V supply voltage for the preamplifier 3. A voltage stabilizing circuit U is arranged between the second output end (pin 4) of the DB9 connector 2 and the IMPATT diode 12210, voltage stabilizing circuit U 210 provide a +24V supply voltage to the IMPATT diode 12. A voltage stabilizing circuit U is connected between the second output end (pin 4) of the DB9 connector 2 and the external synchronous amplifier 7311, a voltage stabilizing circuit U 311 supply the +24V supply voltage to the external synchronous amplifier 7.
The IMPATT diode 12 is integrated in the waveguide resonant cavity, is externally connected with a bias circuit, and can generate high-frequency oscillation after being electrified to generate higher harmonics of an input signal f.
The band-pass filter 5 can separate out the required output frequency n × f and restrain other subharmonic frequencies, and determines the power bandwidth and harmonic parameter characteristics, and the bandwidth of the band-pass filter 5 is 87.6 +/-2 GHz.
The interfaces of the DB9 connector 2, preamplifier 3, waveguide isolator 4, band-pass filter 5, circulator 6 and waveguide 8 are fitted with metal shims to reduce interface losses.
The frequency multiplier is powered on through a DB9 connector 2, signals with the bandwidth of 10.95 +/-0.05 GHz and the power of 10 +/-2 mW are input, the input signals are sequentially subjected to power amplification of a preamplifier and an IMPATT diode, isolation, decoupling, protection and matching of a waveguide isolator, after filtering and transformation of a band-pass filter 5, signals with the bandwidth of 87.6 +/-2 GHz are output from a waveguide, and the power of the output signals is 40 +/-5 mW (see figure 3).
The response has the advantages that the level of the harmonic component of the output signal frequency spectrum is not more than-40 dBc by adopting the band-pass filter, the level of the non-harmonic component of the output signal frequency spectrum is not more than-70 dBm by adopting the external synchronous amplifier, and the high accuracy and reliability of the output signal are ensured.
Claims (8)
1. The millimeter wave frequency multiplier based on the IMPATT diode is characterized by comprising a preamplifier (3), the IMPATT diode (12), a waveguide isolator (4), a band-pass filter (5), a circulator (6) and a waveguide (8) which are sequentially connected, wherein the preamplifier (3) is connected with a first output end of a DB9 connector (2), and an external synchronous amplifier (7) is connected between a second output end of the DB9 connector (2) and the circulator (6); the input signal enters the frequency multiplier from the preamplifier (3), and is output from the waveguide (8) after being amplified and converted by the frequency multiplier.
2. An IMPATT diode-based millimeter wave frequency multiplier according to claim 1, characterized in that a voltage stabilizing circuit U is arranged between the output end one of the DB9 connector (2) and the preamplifier (3)1(9) After the DB9 connector (2) is powered on, the voltage stabilizing circuit U1(9) The preamplifier (3) is supplied with a +5V power supply voltage.
3. An IMPATT diode-based millimeter wave frequency multiplier according to claim 2, characterized in that a voltage stabilizing circuit U is arranged between the second output terminal of the DB9 connector (2) and the IMPATT diode (12)2(10) After the DB9 connector (2) is powered on, the voltage stabilizing circuit U2(10) The +24V supply voltage is provided to the IMPATT diode (12).
4. An IMPATT diode-based millimeter wave frequency multiplier according to claim 3, characterized in that a voltage stabilizing circuit U is connected between the second output terminal of the DB9 connector (2) and the external synchronous amplifier (7)3(11) After the DB9 connector (2) is powered on, the voltage stabilizing circuit U3(11) The external synchronous amplifier (7) is supplied with a +24V supply voltage.
5. An IMPATT diode-based millimeter wave frequency multiplier according to claim 1, wherein the IMPATT diode (12) is integrated in the waveguide resonator, and the IMPATT diode (12) is externally connected with a bias circuit.
6. An IMPATT diode-based millimeter wave frequency multiplier according to claim 1, characterized in that the length of the waveguide (8) ports is 2.4mm and the height is 1.2 mm.
7. An IMPATT diode-based millimeter wave frequency multiplier according to claim 1, characterized in that, the device further comprises a substrate (1), and the DB9 connector (2), the preamplifier (3), the waveguide isolator (4), the band-pass filter (5), the circulator (6) and the waveguide (8) are fixed on the substrate (1) through fixing pieces and screws.
8. An IMPATT diode based millimeter wave frequency multiplier according to claim 7, characterized in that metal gaskets for reducing interface loss are arranged between the interfaces of the DB9 connector (2), the preamplifier (3), the waveguide isolator (4), the band-pass filter (5), the circulator (6) and the waveguide (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921833528.1U CN210986048U (en) | 2019-10-29 | 2019-10-29 | Millimeter wave frequency multiplier based on IMPATT diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921833528.1U CN210986048U (en) | 2019-10-29 | 2019-10-29 | Millimeter wave frequency multiplier based on IMPATT diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210986048U true CN210986048U (en) | 2020-07-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921833528.1U Active CN210986048U (en) | 2019-10-29 | 2019-10-29 | Millimeter wave frequency multiplier based on IMPATT diode |
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| Country | Link |
|---|---|
| CN (1) | CN210986048U (en) |
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2019
- 2019-10-29 CN CN201921833528.1U patent/CN210986048U/en active Active
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Address after: 710000, Room L104, 1st Floor, R&D Building, China Putian Xi'an Industrial Park, Aerospace South Road, National Civil Aerospace Industry Base, Xi'an City, Shaanxi Province Patentee after: Xi'an Bit Lianchuang Technology Co.,Ltd. Address before: 710100 room 210, 2nd floor, hangchuang International Plaza, Shenzhou 4th Road, Xi'an space base, Shaanxi Province Patentee before: XI'AN BITELIANCHUANG MICROWAVE TECHNOLOGY CO.,LTD. |