CN110247288A - Room temperature semiconductor maser and its application - Google Patents
Room temperature semiconductor maser and its application Download PDFInfo
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- CN110247288A CN110247288A CN201910604297.5A CN201910604297A CN110247288A CN 110247288 A CN110247288 A CN 110247288A CN 201910604297 A CN201910604297 A CN 201910604297A CN 110247288 A CN110247288 A CN 110247288A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
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Abstract
A kind of room temperature semiconductor maser and its application, belong to quantum mechanics, Semiconductor Physics, electronics technology.Polariton in transistor containing hetero-junctions is energized into high level by pumped microwave by the room temperature semiconductor maser, resonant network provides specified energy pathway at its resonance frequency, so that the polariton for being excited to high level transits to downwards the specified energy level in energy level region, external radiated electromagnetic wave.The present invention efficiently solves the problems such as existing maser device, bulky, complex process harsh to operating environment requirements, room temperature maser is realized by using the transistor containing hetero-junctions of general semiconductor process conditions production, structure is simple, it can work in normal temperature environment, and can work without laser as pumping.
Description
Technical field
The invention belongs to quantum mechanics, Semiconductor Physics, electronics technology, and in particular to a kind of using containing hetero-junctions
Transistor level characteristic realize maser technology.
Background technique
Bonfire, sunlight and cosmic background radiation etc. are our common spontaneous radiations, but to obtain regular relevant spoke
Penetrate (or stimulated radiation) then must just be able to achieve by various technological means.For semiconductor laser, people are usually utilized
Transition (forbidden bandwidth of semiconductor material be usually 1-2eV) of the electronics between conduction band and valence band is sent out in semiconductor material to realize
Light.In microwave frequency band, since frequency is low, by taking the microwave of frequency f=1GHz as an example, by planck formula, corresponding to energy is only
E1GHz=hf=4.1 × 10-6EV, wherein h be Planck's constant, it is impossible to make as laser electrons cross forbidden band to
Realize stimulated radiation.Stimulated radiation is realized in microwave frequency band, and existing method is mainly to utilize electronics in atom or molecule
Transition radiation between intrinsic discrete energy level is realized.It as far as we know, at present can not also be under normal temperature conditions using mature, convenient
Semiconductor realize maser (MASER).
Currently, being there is no in the world based on transistor level characteristic, using microwave electromagnetic energy as pumping, maser is realized
Circuit and method.Maser is usually applied to atomic clock, such as hydrogen atomic clock, rubidium atomic clock, cesium-beam atomic clock, but due to maser device
Volume and weight it is larger, the atomic clock volume and weight based on this is also all very big, and is difficult to minimize.It is more popular at present
Although Atomic Clocks Based on Coherent Population Trapping simplified in structure, volume is reduced, but still need laser participation
It is able to achieve microwave output [Atomic Clocks Based on Coherent Population Trapping theoretical and experimental study, Wang Xin, doctoral thesis, 2015].Also there is use
For the terphenyl of pentacene doping as gain medium, yellow light pulsed dye laser utilizes TE as pumping source01δAs resonant mode
The room temperature maser of formula, [room temperature solid state maser, Mark as shown in Figure 1
Oxborrow,Nature,Aug.2012.].But medium processing technology used in this method is non-universal, builds needed for device
Component it is more, structure is complex, and can only generate the microwave of impulse form.
The normal-temperature continuous wave maser that in March, 2018 is reported, [Continuous wave room as shown in Figure 2
Temperature diamond maser, Jonathan D.Breeze, Nature, Mar.2018], by that will have Gao Posai
You combine the chamber of the factor with the narrow linewidth of NV defect transition in diamond, use input power for 500mW, wavelength 532nm
For laser as pumping, producing frequency is the microwave signal of 9.2GHz, output power less than 0.8pw, and efficiency is 1.6 × 10-9。
Summary of the invention
In order to solve the above-mentioned technical problem, it the invention proposes a kind of room temperature semiconductor maser and its implementation and answers
With using the energy level region of the transistor containing hetero-junctions, pumped microwave makes polariton be excited to high level, the pole being excited
Change excimer and transits to the specified energy level in the energy level region, external radiated electromagnetic wave downwards.
The technical solution adopted by the invention is as follows:
A kind of implementation method of room temperature semiconductor maser, which is characterized in that by pumped microwave by the crystal containing hetero-junctions
Polariton in pipe is energized into high level, and resonant network provides specified energy pathway at its resonance frequency, so that by swashing
The polariton for being dealt into high level transits to downwards specified energy level in energy level region, external radiated electromagnetic wave.
Further, the specified energy level in the energy level region is adjusted using resonant network, to meet practical application
Demand to radiated electromagnetic wave.
Further, the polariton for being excited to high level first transits to specified energy level, then from specified energy level transition
To ground state level.Wherein, when being excited to the polariton of high level and transitting to specified energy level, radiation generates the frequency root of microwave
It is determined according to the resonance frequency of input pumping microwave frequency and resonant network；When from specified energy level transition to ground state level, radiation is produced
Raw frequency is equal to the resonance frequency of resonant network.
A kind of room temperature semiconductor maser, it is harmonious including the first matching network, the second matching network, the transistor containing hetero-junctions
Vibrating network, the first matching network output end are connected with the transistor drain containing hetero-junctions, the second matching network input terminal with
Transistor source containing hetero-junctions is connected, and the transistor gate containing hetero-junctions is grounded by resonant network；Described first
Distribution network input terminal feed-in pumped microwave.
Further, the transistor containing hetero-junctions can be Heterojunction Bipolar Transistors or field-effect tube
(FET) etc.；Wherein, the field-effect tube can be Metal-Oxide Semiconductor field effect transistor (MOSFET) or high electricity
Transport factor transistor (HEMT).
A kind of room temperature semiconductor maser provided by the invention, its working principle is that:
Pumped microwave, will be in the transistor energy level containing hetero-junctions by the first transistor of the matching network feed-in containing hetero-junctions
Polariton be energized into high level, resonant network provides specified energy pathway at its resonance frequency, so that being excited to
The polariton of high level transits to downwards the specified energy level in energy level region, external radiated electromagnetic wave, then again from specified energy
Order transition is to ground state level, external radiated electromagnetic wave.
A kind of implementation method of the passive frequency mixer based on room temperature semiconductor maser, which is characterized in that pass through pumped microwave
Polariton in transistor containing hetero-junctions is energized into high level, pumped microwave provides local frequency fp；Work as input signal
Frequency frAfterwards, the polariton for being excited to high level transits to downwards specifying in energy level region according to the signal frequency of input
Energy level, output frequency fa, complete signal mixing.
Wherein, the polariton for being excited to high level transits to downwards specified energy level in energy level region, output frequency
fa, the position of the specified energy level is by the signal frequency f that inputsrIt determines；When transitting to ground state level downwards by specified energy level, output
Frequency fr。
Wherein, the polariton for being excited to high level first transits to downwards specified energy level, then specifies energy level again from this
It is secondary to transit to ground state level downwards.When polariton transition downward by high level, polariton releases energy, and drives more
The downward transition of polariton, causes chain reaction, which passes through the mixing that this method is realized in showing as macroscopically
Device has gain, and the gain is related with the power of pumped microwave.
A kind of passive frequency mixer based on room temperature semiconductor maser, as shown in figure 5, including LO filter and its pair net
Network, bandpass filter and its matching network, the transistor containing hetero-junctions, low-pass filter and its matching network, wherein the LO
The output end of filter and its matching network is connected with the transistor drain containing hetero-junctions, low-pass filter and its matching network
Input terminal is connected with the transistor source containing hetero-junctions, it is described containing hetero-junctions transistor gate connection bandpass filter and its
Distribution network.
Further, the transistor containing hetero-junctions can be Heterojunction Bipolar Transistors or field-effect tube
(FET) etc.；Wherein, the field-effect tube can be Metal-Oxide Semiconductor field effect transistor (MOSFET) or high electricity
Transport factor transistor (HEMT).
A kind of passive frequency mixer based on room temperature semiconductor maser provided by the invention, pumped microwave input local frequency
fp, the transistor containing hetero-junctions is inputted by LO filter and its matching network, the polarization in the transistor containing hetero-junctions is swashed
Member is energized into high level；Frequency input signal frTransistor by bandpass filter and its matching network feed-in containing hetero-junctions,
So that the polariton for being excited to high level transits to downwards the specified energy level in energy level region, output frequency fa, complete letter
Number mixing.
Application the present invention also provides above-mentioned room temperature semiconductor maser as frequency microwave oscillator, pumped microwave will contain
Polariton in the transistor of hetero-junctions is energized into high level, is controlled in oscillator according to the pumped microwave watt level of input
The resonance frequency for playing the resonant network of feedback effect, so that the polariton for being excited to high level first transits in energy level region
Specified energy level, then ground state level is transitted to, to realize stable oscillation output.
Wherein, the specified energy level is adjusted by the resonance frequency of resonant network；The resonant network includes transistor internal
Junction capacity, the power of the pumped microwave of input is by changing the size of junction capacity, to control the resonance frequency of resonant network.
Further, the polariton for being excited to high level first transits to specified energy level in energy level region, and radiation produces
Raw frequency of oscillation is determined according to the pumped microwave frequency and resonance frequency of input；When from specified energy level transition to ground state level,
The frequency of oscillation that radiation generates is the resonance frequency of resonant network.
Further, there are a threshold values for the power of the pumped microwave of input, i.e., when pumped microwave power is higher or lower than
When a certain value, oscillation is just had.
Further, the working principle of the frequency microwave oscillator are as follows: the pumped microwave of different capacity can change resonance
The resonance frequency of network, according to formula pt=hfpN, wherein n represents the polariton number for the transition that is stimulated, when t is
Between, h is Planck's constant, in pumped microwave frequency fpUnder the premise of constant, power p becomes larger, and causes its capacitor to reduce, according to humorous
The relationship of the resonance frequency of vibrating networkThe reduction of capacitor will lead to the raising of resonance frequency.
The present invention also provides a kind of frequency-stabilizing methods based on room temperature semiconductor maser, which is characterized in that feed-in pumping is micro-
Wave power is a definite value in the stable frequency scope of the transistor containing hetero-junctions, and stable oscillation output can be obtained.
Wherein, above-mentioned frequency stabilization principle are as follows: by transmission line or the received pumped microwave of external antenna by the crystalline substance containing hetero-junctions
Polariton in body pipe is energized into high level, and resonant network provides specified energy pathway at its resonance frequency, so that by
The polariton for being energized into high level transits to specified energy level in energy level region, generates stable oscillation output.
Wherein, the pumped microwave frequency of input wants sufficiently large, so that the energy of pumped microwave is enough that the crystalline substance of hetero-junctions will be contained
Polariton in body pipe is energized into high level.
Wherein, when the power of the pumped microwave of input is certain value, the height of pump frequency can control oscillation output frequency
The height of rate, i.e. oscillator have certain tuning bandwidth.As shown in figure 8, when the power of the pumped microwave of input is stable frequency scope
In certain value when, oscillator oscillation output can obtain best frequency stability and phase noise performance, that is, be able to achieve surely
Frequently.
The present invention also provides a kind of application of frequency-stabilizing method based on room temperature semiconductor maser in clock distribution.
It further, is the pumping of certain value in the transistor stable frequency scope containing hetero-junctions by receiving antenna feed-in power
Microwave obtains stable clock signal；The stable clock signal is emitted to each receiver by transmitting antenna, can be realized
Clock wireless dispatch.
The invention has the benefit that
It 1, will be containing hetero-junctions by pumped microwave the present invention provides a kind of room temperature semiconductor maser and its implementation
Polariton in transistor is energized into high level, and the energy for providing specified energy level at its resonance frequency using resonant network is logical
Road, so that the polariton for being excited to high level transits to downwards specified energy level, to realize stable microwave radiation.This hair
It is bright to efficiently solve the problems such as existing maser device, bulky, complex process harsh to operating environment requirements, by using logical
Room temperature maser is realized with the transistor containing hetero-junctions that semiconductor technological condition makes, structure is simple, it can work in normal temperature environment,
And threshold power is only 22mW, efficiency is up to 5%.
2, a kind of passive frequency mixer based on room temperature semiconductor maser provided by the invention, will be contained heterogeneous by pumped microwave
Polariton in the transistor of knot is energized into high level, and pumped microwave provides local frequency fp；As frequency input signal frAfterwards,
The polariton for being excited to high level transits to downwards specified energy level in energy level region according to the signal frequency of input, output
Frequency fa, complete signal mixing.It is big that the frequency mixer efficiently solves existing passive mixer conversion loss height, required local oscillation power
The shortcomings that, and obtained frequency mixer has certain gain.
3, the present invention is based on the frequency microwave oscillator of room temperature semiconductor maser, structure is simple, easy to use, without being added
Direct current biasing and control voltage, only need to receive pumped microwave by transmission line or external antenna can work.
Detailed description of the invention
Fig. 1 is the schematic diagram for the room temperature maser mentioned in background technique；
Fig. 2 is the schematic diagram for the normal-temperature continuous wave maser mentioned in background technique；
Fig. 3 is a kind of schematic diagram of room temperature semiconductor maser provided by the invention；
Fig. 4 is a kind of working principle diagram of room temperature semiconductor maser provided by the invention；
Fig. 5 is a kind of structural representation for passive frequency mixer based on room temperature semiconductor maser that the embodiment of the present invention 1 provides
Figure；
Fig. 6 is a kind of test result for passive frequency mixer based on room temperature semiconductor maser that the embodiment of the present invention 1 provides
Figure；
Fig. 7 is that a kind of frequency microwave oscillator based on room temperature semiconductor maser that the embodiment of the present invention 2 provides is inputting
When frequency is 578.65MHz, input power and output frequency of oscillation frRelational graph；
Fig. 8 is the crystal containing hetero-junctions in the frequency-stabilizing method based on room temperature semiconductor maser that the embodiment of the present invention 3 provides
The f of piperSpectrum density is with fpThe change curve of power；
Fig. 9 is output phase noise in the hour hands distribution based on room temperature semiconductor maser that the embodiment of the present invention 4 provides
Figure；
Figure 10 is in the hour hands distribution based on room temperature semiconductor maser that the embodiment of the present invention 4 provides, and the pumping of input is micro-
Wave fpFrequency and output signal frFrequency relation curve.
Specific embodiment
For convenient for those skilled in the art understand that technology contents of the invention, with reference to the accompanying drawing to the content of present invention into one
Step is illustrated.
As shown in figure 3, being a kind of schematic diagram of room temperature semiconductor maser provided by the invention；It include: the first matching network
11, the second matching network 12, transistor 10 and resonant network containing hetero-junctions, 11 output end of the first matching network with containing different
The drain electrode of transistor 10 of matter knot is connected, and the second matching network input terminal 12 is connected with 10 source electrode of transistor containing hetero-junctions, described
Transistor gate containing hetero-junctions is grounded by resonant network；The first matching network input terminal feed-in pumped microwave.
Wherein, the purpose of the first matching network 11 is to realize sending-end impedance to the transistor drain impedance containing hetero-junctions
Matching, can transistor 10 by pumped microwave with higher efficiency feed-in containing hetero-junctions；The purpose of second matching network 12 is to realize
Transistor source impedance containing hetero-junctions can smoothly transmit out the microwave signal of output to the impedance matching of output port
It goes.
As shown in figure 4, being a kind of working principle diagram of room temperature semiconductor maser provided by the invention.Maser device of the present invention
When work, ground state level E0Polariton be excited to high level Eh=E0+h·fp(h is Planck's constant, fpFor pumping frequency
Rate)；Work as EhWhen unstable polariton is transitted to downwards in more low-lying level on energy level, radiation energy.In order to form stable energy
Amount radiation, using resonant network, in its resonance frequency frPlace provides the energy pathway of specified energy level, as shown in figure 3, with its resonance
Circuit provides transition conditions.In this way, the polariton of excitation will be in energy level Er=Eh-h·fr=E0+h·(fp-fr) on reach most
Big transfer rate.Therefore, polariton is first from EhTransit to Er, radiation generation frequency fa=fp-fr, then from ErIt transits to
E0, radiation generation frequency fr。
A kind of room temperature semiconductor maser provided by the invention has simple structure, normal temperature condition and is used as pump without laser
The characteristics of Pu can work can be widely applied to the fields such as medicine, safety, sensing, quantum techniques and electronics.
Embodiment 1
A kind of passive frequency mixer based on room temperature semiconductor maser of the present invention is present embodiments provided, as shown in figure 5, including
LO filter and its matching network A, bandpass filter and its matching network D, the transistor B containing hetero-junctions, low-pass filter and
Its matching network C, wherein the drain electrode phase of the output end of the LO filter and its matching network and the transistor containing hetero-junctions
Even, the input terminal of low-pass filter and its matching network is connected with the transistor source containing hetero-junctions, the crystalline substance containing hetero-junctions
Body tube grid connects bandpass filter and its matching network；The input terminal feed-in of the LO filter and its matching network A pump
The input terminal frequency input signal f of microwave, bandpass filter and its matching network Dr。
Wherein, LO filter ensures fpSignal passes through, frAnd faBarrier；Bandpass filter ensures frPass through, fpAnd faBarrier；
Low-pass filter ensures faPass through, fpBarrier.
Wherein, the purpose of LO filter and its matching network A are to realize being isolated for local oscillator port LO and signal input port,
It prevents signals leakiness from going out, while guaranteeing the matching between port.The purpose of bandpass filter and its matching network D are to guarantee letter
The matching of number input port simultaneously reduces return loss, while being filtered to the signal of input, filters out useless interference.
The purpose of low-pass filter and its matching network C are to realize the matching of the port, while filtering out the useless item in output spectrum,
Item needed for retaining.
The present embodiment room temperature semiconductor microwave passive frequency mixer working principle contains heterogeneous as shown in figure 4, when frequency mixer works
The transistor of knot is by pumped microwave fpExcitation, polariton is by initial level E0Transit to excited level Eh, which can be considered
Frequency mixer local frequency.At this point, input signal fr, excitation state polariton is according to the signal frequency of input by excited level Eh
Lower level E is transitted to downwardsr, output frequency fa=fp-fr, complete signal mixing.
Fig. 6 is a kind of test result for passive frequency mixer based on room temperature semiconductor maser that the embodiment of the present invention 1 provides
Figure；It will be appreciated from fig. 6 that passive mixing may be implemented in the present invention.
A kind of passive frequency mixer based on room temperature semiconductor maser that embodiment 1 provides, simple, the required local oscillator with structure
Power is small, has many advantages, such as conversion gain, efficiently solves traditional passive mixer conversion loss is high, required local oscillation power is big etc.
Problem can be widely applied to the fields such as communication, sensing, quantum techniques and electronics.
Embodiment 2
Present embodiments provide a kind of frequency microwave oscillator based on room temperature semiconductor maser of the present invention, structure and half
The structure of conductor maser is identical (such as Fig. 3).Its working principle is that: by the pumped microwave frequency f of inputpIt is defeated as offset signal
The pumped microwave power entered is excited in the transistor containing hetero-junctions of high level as control signal by pumped microwave
Polariton, the feedback provided at its resonance frequency through resonant network first transit to the specified energy level in energy level region, then jump
Ground state level is adjourned, to realize stable oscillation output.Such as under the premise of determining pump frequency is 578.65MHz, lead to
Cross the power for changing the pumped microwave of input, thus it is possible to vary the frequency of oscillation f of outputr, as shown in Figure 7.
The present embodiment frequency microwave oscillator structure is simple, easy to use, it is not necessary that direct current biasing and control voltage is added, only
Needing external antenna or transmission line to receive pumped microwave can work, can be widely applied to medicine, safety, sensing, quantum techniques and
The every field such as electronics.
Embodiment 3
A kind of frequency-stabilizing method based on room temperature semiconductor maser is present embodiments provided, is connect by transmission line or external antenna
Polariton in transistor containing hetero-junctions is energized into high level by the pumped microwave of receipts, and resonant network is at its resonance frequency
Specified energy pathway is provided, so that the polariton for being excited to high level transits to the specified energy level in energy level region, is produced
Raw stable oscillation output.
Fig. 8 is the crystal containing hetero-junctions in the frequency-stabilizing method based on room temperature semiconductor maser that the embodiment of the present invention 3 provides
The f of piperSpectrum density is with fpThe change curve of power；Fixed input pumped microwave fpFrequency, change its input power Pin, can go out
Now increase when that is, input power reaches certain particular range (stable frequency scope) with input power from locking phenomena, output signal fr's
Frequency Locking.Using this phenomenon, feed-in power is the pumped microwave of a definite value in the stable frequency scope, be can be obtained stable
Oscillation output.
Embodiment 4
A kind of time clock distribution method based on room temperature semiconductor maser is present embodiments provided, input frequency is
The pumped microwave signal of 578.65MHz changes its input power Pin, output signal frequency variation is recorded, is obtained as shown in Figure 8
Change curve；Fixed input pumped microwave fpFrequency, change its input power Pin, it may appear that from locking phenomena, i.e. input work
When rate reaches certain particular range (stable frequency scope), increase with input power, output signal frFrequency Locking.Using this phenomenon,
It is the pumped microwave of a definite value in the stable frequency scope by receiving antenna or transmission line feed-in power, that is, when generating stable
Clock output, which can be emitted by transmitting antenna, then be received by corresponding receiver, and clock can be realized
Wireless dispatch.As shown in Figure 8, input power PinBetween -8.3dBm and -7.3dBm, the frequency of output signal is maintained at 72MHz
Left and right occurs from locking phenomena.
The stability of self-locking timing output signal is detected below.By frequency fpFor 578.65MHz, power PinFor -7.82dBm
Pumped microwave by the first matching network feed-in high electron mobility transistor, adjustment input, output matching network electricity
The drain of transistor, source impedance are matched to 50 Ω by electrification capacitance, make to input resonance point ft=fp578.65GHz is matched to,
Export resonance point is matched to f 'r=72MHz tests the phase noise of transmitting antenna front end signal, as a result as shown in Figure 9.By Fig. 9
It is found that working frequency is 72.33MHz, when frequency shift (FS) is 100KHz, phase noise is -113.1dBc/Hz；When frequency is inclined
When shifting is 10KHz, phase noise is -112.4dBc/Hz；When frequency shift (FS) is 1KHz, phase noise is -98.7dBc/Hz.
By test result it can be seen that self-locking timing occurs, output phase noise objective is outstanding, and frequency stabilization performance is prominent.
Fixed input pumping microwave power PinFor -7.82dBm, change the frequency f of input signalp, test output signal fr
Frequency values, the results are shown in Figure 10.Test discovery determines value, pumped microwave when the power of the pumped microwave of input is one
fpFrequency size can control oscillation output signal frThe size of frequency, it is possible thereby to realize the tuning of clock signal.
Claims (10)
1. a kind of implementation method of room temperature semiconductor maser, which is characterized in that by pumped microwave by the transistor containing hetero-junctions
In polariton be energized into high level, resonant network provides specified energy pathway at its resonance frequency, so that being excited
Polariton to high level transits to downwards the specified energy level in energy level region, external radiated electromagnetic wave.
2. the implementation method of room temperature semiconductor maser according to claim 1, which is characterized in that be excited to high level
Polariton first transits to specified energy level, and radiation generates the frequency of microwave according to the humorous of input pumping microwave frequency and resonant network
Vibration frequency determines；Then from specified energy level transition to ground state level, the frequency for radiating generation is equal to the resonance frequency of resonant network.
3. a kind of room temperature semiconductor maser, including the first matching network, the second matching network, transistor and resonance containing hetero-junctions
Network, the first matching network output end are connected with the transistor drain containing hetero-junctions, the second matching network input terminal with contain
The transistor source of hetero-junctions is connected, and the transistor gate containing hetero-junctions is grounded by resonant network；First matching
Network input feed-in pumped microwave.
4. room temperature semiconductor maser according to claim 3, which is characterized in that the transistor containing hetero-junctions is heterogeneous
Tie bipolar junction transistor or field-effect tube.
5. room temperature semiconductor maser according to claim 4, which is characterized in that the field-effect tube is metal-oxide
Semiconductor field effect transistor or high electron mobility transistor.
6. a kind of implementation method of the passive frequency mixer based on room temperature semiconductor maser, which is characterized in that will by pumped microwave
Polariton in transistor containing hetero-junctions is energized into high level, and pumped microwave provides local frequency fp；When input signal frequency
Rate frAfterwards, the polariton for being excited to high level transits to downwards specified energy in energy level region according to the signal frequency of input
Grade, output frequency fa, complete signal mixing.
7. a kind of passive frequency mixer based on room temperature semiconductor maser, including LO filter and its matching network, bandpass filter
And its matching network, the transistor containing hetero-junctions, low-pass filter and its matching network, wherein the LO filter and its
The output end of distribution network is connected with the transistor drain containing hetero-junctions, the input terminal of low-pass filter and its matching network with containing different
The transistor source of matter knot is connected, the transistor gate connection bandpass filter and its matching network containing hetero-junctions.
8. a kind of implementation method of the frequency microwave oscillator based on room temperature semiconductor maser, which is characterized in that pumped microwave will
Polariton in transistor containing hetero-junctions is energized into high level, controls oscillator according to the pumped microwave watt level of input
In rise feedback effect resonant network resonance frequency so that the polariton for being excited to high level first transits to energy level region
Interior specified energy level, then ground state level is transitted to, to realize stable oscillation output.
9. a kind of frequency-stabilizing method based on room temperature semiconductor maser, which is characterized in that feed-in pumped microwave power is containing hetero-junctions
Transistor stable frequency scope in a definite value, stable oscillation output can be obtained.
10. a kind of application of frequency-stabilizing method as claimed in claim 9 based on room temperature semiconductor maser in clock distribution.
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