CN110247288B - Normal temperature semiconductor pulse and application thereof - Google Patents
Normal temperature semiconductor pulse and application thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
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Abstract
A normal temperature semiconductor pulse and application thereof belong to the technical fields of quantum mechanics, semiconductor physics and electronics. The normal temperature semiconductor pulse excites polaritons in the transistor containing the heterojunction to a high energy level through pumping microwaves, and the resonant network provides a specified energy path at the resonant frequency of the polaritons, so that the polaritons excited to the high energy level transition downwards to a specified energy level in an energy level area and radiate electromagnetic waves outwards. The invention effectively solves the problems of the existing pulse device such as strict requirement on working environment, huge volume, complex process and the like, realizes normal-temperature pulse by adopting the heterojunction-containing transistor manufactured under the general semiconductor process condition, has simple structure, can work in normal-temperature environment, and can work without laser as a pump.
Description
Technical Field
The invention belongs to the technical fields of quantum mechanics, semiconductor physics and electronics, and particularly relates to a technology for realizing pulse by utilizing the energy level characteristics of a transistor with a heterojunction.
Background
Bonfire, sunlight, cosmic background radiation, etc. are common spontaneous emissions, but to obtain regular coherent radiation (or stimulated radiation) it is necessary to rely on various technical means. For semiconductor lasers, light emission is typically achieved by utilizing transitions of electrons in the semiconductor material between the conduction and valence bands (the forbidden band width of the semiconductor material is typically 1-2 eV). In the microwave band, because of low frequency, taking microwaves with frequency f=1 GHz as an example, the Planck formula corresponds to energy E only 1GHz ＝h·f＝4.1×10 -6 eV, where h is the planck constant, it is not possible to cross the forbidden band with electrons like a laser to achieve stimulated emission. To achieve stimulated emission in the microwave frequency range, existing methods are mainly implemented by using transition emission of electrons between inherent discrete energy levels of atoms or molecules. To our knowledge, it is not currently possible to achieve pulse (MASER) using mature, convenient semiconductors at ambient temperature.
At present, no circuit and method for realizing pulse by using microwave electromagnetic energy as a pump based on transistor energy level characteristics exist in the world. The pulse is generally applied to atomic clocks such as hydrogen atomic clocks, rubidium atomic clocks, cesium atomic clocks, etc., but since the volume and weight of the pulse device are large, the volume and weight of the atomic clock based thereon are also very large, and miniaturization is difficult. At present, although the structure of the coherent population trapping atomic clock is simplified and the volume is reduced, the microwave output can be realized only by the participation of laser [ theory and experimental study of the coherent population trapping atomic clock, wang Xin, doctor paper, 2015 ]. Pentacene doped terphenyl is also adopted as a gain medium, yellow light pulse dye laser is adopted as a pumping source, and TE is utilized 01δ As a normal temperature maser of the resonance mode, as shown in fig. 1 [ room temperature solid state maser, mark oxboron, nature, aug.2012 ]. However, the medium processing technology used by the method is not universal, more parts are required for building the device, the structure is complex, and only microwaves in a pulse form can be generated.
The room temperature continuous wave pulse reported in 3 2018, as shown in fig. 2 [ Continuous wave room temperature diamond maser, jonathan d.breeze, nature, mar.2018 ], produced a microwave signal with a frequency of 9.2GHz and an output power of less than 0.8pw at an efficiency of 1.6x10 by combining a cavity with a high peltier factor with a narrow linewidth of NV defect transitions in diamond, using a laser with an input power of 500mW and a wavelength of 532nm as a pump -9 。
Disclosure of Invention
In order to solve the technical problems, the invention provides a normal-temperature semiconductor pulse, a realization method and application thereof, and utilizes an energy level region of a transistor containing a heterojunction to pump microwaves to excite polaritons to a high energy level, and the excited polaritons downwards transit to a designated energy level in the energy level region and radiate electromagnetic waves outwards.
The technical scheme adopted by the invention is as follows:
a method for realizing normal-temperature semiconductor pulse is characterized in that polaritons in a transistor containing a heterojunction are excited to a high energy level by pumping microwaves, a resonant network provides a specified energy path at the resonant frequency of the polaritons, so that the polaritons excited to the high energy level downwards transit to a specified energy level in an energy level area, and electromagnetic waves are radiated to the outside.
Further, the designated energy level in the energy level region is regulated by adopting a resonant network so as to meet the requirement of actual application on radiation electromagnetic waves.
Further, the polaritons excited to a high energy level first transit to a designated energy level and then transit from the designated energy level to a ground state energy level. When the polaritons excited to a high energy level transition to a specified energy level, the frequency of the microwave generated by radiation is determined according to the frequency of the input pump microwave and the resonance frequency of the resonance network; upon transition from the designated energy level to the ground state energy level, the radiation produces a frequency equal to the resonant frequency of the resonant network.
The normal-temperature semiconductor pulse comprises a first matching network, a second matching network, a transistor containing a heterojunction and a resonant network, wherein the output end of the first matching network is connected with the drain electrode of the transistor containing the heterojunction, the input end of the second matching network is connected with the source electrode of the transistor containing the heterojunction, and the grid electrode of the transistor containing the heterojunction is grounded through the resonant network; the first matching network input feeds into the pump microwaves.
Further, the heterojunction-containing transistor may be a heterojunction bipolar transistor or a Field Effect Transistor (FET) or the like; wherein the field effect transistor may be a metal-oxide semiconductor field effect transistor (MOSFET) or a High Electron Mobility Transistor (HEMT).
The invention provides a normal temperature semiconductor pulse, which has the following working principle:
the pump microwaves are fed into the transistor containing the heterojunction through the first matching network, polaritons in the energy level of the transistor containing the heterojunction are excited to a high energy level, the resonance network provides a specified energy path at the resonance frequency of the pump microwaves, so that the polaritons excited to the high energy level downwards transit to a specified energy level in an energy level area, electromagnetic waves are radiated to the outside, then the polaritons transit from the specified energy level to a ground state energy level, and the electromagnetic waves are radiated to the outside.
A method for realizing passive mixer based on normal temperature semiconductor pulse is characterized in that polarized excimer in transistor containing heterojunction is excited to high energy level by pumping microwave, and the pumping microwave provides local oscillation frequency f p The method comprises the steps of carrying out a first treatment on the surface of the At the input signal frequency f r After that, the polaritons excited to a high energy level transition downward to a specified energy level in the energy level region according to the input signal frequency, outputting the frequency f a Signal mixing is completed.
Wherein the polaritons excited to a high energy level transition downward to a specified energy level within the energy level region, outputting a frequency f a The position of the designated energy level is determined by the input signal frequency f r Determining; the output frequency f when the designated energy level transitions down to the ground state energy level r 。
Wherein the polaritons excited to a high energy level first transition down to a prescribed energy level and then transition down again from the prescribed energy level to a ground state energy level. When the polaritons are downwards transited from a high energy level, the polaritons release energy to drive more polaritons to downwards transit, and a chain reaction is initiated, and the microscopic phenomenon is macroscopically expressed in that the mixer realized by the method has a gain, and the gain is related to the power of pumping microwaves.
The passive mixer based on normal temperature semiconductor pulse is shown in fig. 5, and comprises an LO filter and a matching network thereof, a band-pass filter and a matching network thereof, a transistor containing heterojunction, a low-pass filter and a matching network thereof, wherein the output end of the LO filter and the matching network thereof is connected with the drain electrode of the transistor containing heterojunction, the input end of the low-pass filter and the matching network thereof is connected with the source electrode of the transistor containing heterojunction, and the grid electrode of the transistor containing heterojunction is connected with the band-pass filter and the matching network thereof.
Further, the heterojunction-containing transistor may be a heterojunction bipolar transistor or a Field Effect Transistor (FET) or the like; wherein the field effect transistor may be a metal-oxide semiconductor field effect transistor (MOSFET) or a High Electron Mobility Transistor (HEMT).
The invention provides a semiconductor pulse-free device based on normal temperatureSource mixer, pump microwave input local oscillation frequency f p Inputting a transistor containing a heterojunction through an LO filter and a matching network thereof, and exciting polaritons in the transistor containing the heterojunction to a high energy level; input signal frequency f r Feeding a transistor containing a heterojunction through a band-pass filter and a matching network thereof so that polaritons excited to a high energy level downward transit to a specified energy level in an energy level region, outputting a frequency f a Signal mixing is completed.
The invention also provides application of the normal-temperature semiconductor pulse as a radio-frequency microwave oscillator, pump microwaves excite polaritons in a transistor containing a heterojunction to a high energy level, and the resonance frequency of a resonance network playing a feedback role in the oscillator is controlled according to the input pump microwave power, so that the polaritons excited to the high energy level are firstly transited to a designated energy level in an energy level area and then transited to a ground state energy level, thereby realizing stable oscillation output.
Wherein the specified energy level is adjusted by a resonant frequency of the resonant network; the resonant network comprises a junction capacitor inside the transistor, and the power of the input pump microwave controls the resonant frequency of the resonant network by changing the size of the junction capacitor.
Further, the polaritons excited to high energy level are firstly transited to a designated energy level in the energy level region, and the oscillation frequency generated by radiation is determined according to the input pump microwave frequency and the resonance frequency; the oscillation frequency generated by radiation when transitioning from a given energy level to a ground state energy level is the resonant frequency of the resonant network.
Further, there is a threshold value for the power of the input pump microwaves, i.e. oscillations will occur when the pump microwave power is above or below a certain value.
Further, the working principle of the radio frequency microwave oscillator is as follows: the pump microwaves with different powers change the resonant frequency of the resonant network according to the formula p.t=h.f p N, where n represents the number of polaritons excited to transition, t is time, h is Planck constant, at the pump microwave frequency f p On the premise of no change, the power p is increased, so that the capacitance is reduced, and the resonance network is used forRelation of resonant frequencies of (2)The decrease in capacitance results in an increase in the resonant frequency.
The invention also provides a frequency stabilization method based on normal temperature semiconductor pulse, which is characterized in that the fed-in pumping microwave power is a fixed value in the frequency stabilization range of the transistor containing the heterojunction, and stable oscillation output can be obtained.
Wherein, the frequency stabilization principle is as follows: the polarized excimer in the transistor containing the heterojunction is excited to a high energy level by the pump microwave received by the transmission line or the external antenna, and the resonant network provides a specified energy path at the resonant frequency of the polarized excimer, so that the polarized excimer excited to the high energy level transitions to a specified energy level in an energy level area, and stable oscillation output is generated.
Wherein the frequency of the input pump microwaves is large enough that the energy of the pump microwaves is sufficient to excite polaritons in the heterojunction-containing transistor to a high energy level.
When the power of the input pump microwave is a certain value, the pump frequency can control the oscillation output frequency, namely the oscillator has a certain tuning bandwidth. As shown in fig. 8, when the power of the input pump microwave is a certain value in the frequency stabilization range, the oscillation output of the oscillator can obtain the best frequency stability and phase noise performance, i.e. frequency stabilization can be realized.
The invention also provides application of the frequency stabilization method based on normal temperature semiconductor pulse in clock distribution.
Further, pump microwaves with power being a certain value in a transistor frequency stabilization range containing a heterojunction are fed into a receiving antenna, so that a stable clock signal is obtained; the stable clock signal is transmitted to each receiver through the transmitting antenna, so that the wireless clock distribution can be realized.
The beneficial effects of the invention are as follows:
1. the invention provides a normal-temperature semiconductor pulse and a realization method thereof, wherein polarized excimer in a transistor containing heterojunction is excited to a high energy level by pumping microwaves, and an energy path with a specified energy level is provided at the resonance frequency by adopting a resonance network, so that the polarized excimer excited to the high energy level is downwards transited to the specified energy level, thereby realizing stable microwave radiation. The invention effectively solves the problems of the existing pulse device such as strict requirement on working environment, huge volume, complex process and the like, realizes normal-temperature pulse by adopting the heterojunction-containing transistor manufactured under the general semiconductor process condition, has simple structure, can work in normal-temperature environment, has the threshold power of only 22mW and has the efficiency as high as 5 percent.
2. The invention provides a passive mixer based on normal temperature semiconductor pulse, which excites polaritons in a transistor containing heterojunction to a high energy level through pumping microwaves, and the pumping microwaves provide local oscillation frequency f p The method comprises the steps of carrying out a first treatment on the surface of the At the input signal frequency f r After that, the polaritons excited to a high energy level transition downward to a specified energy level in the energy level region according to the input signal frequency, outputting the frequency f a Signal mixing is completed. The frequency mixer effectively solves the defects of high frequency conversion loss and high required local oscillation power of the traditional passive frequency mixer, and the obtained frequency mixer has a certain gain.
3. The radio frequency microwave oscillator based on normal temperature semiconductor pulse is simple in structure and convenient to use, and can work only by receiving pumping microwaves through a transmission line or an external antenna without adding direct current bias and control voltage.
Drawings
FIG. 1 is a schematic diagram of a room temperature maser as mentioned in the background;
FIG. 2 is a schematic diagram of the ambient temperature continuous wave pulse mentioned in the background art;
FIG. 3 is a schematic diagram of a semiconductor pulse at room temperature according to the present invention;
FIG. 4 is a schematic diagram of the normal temperature semiconductor pulse operation provided by the invention;
fig. 5 is a schematic structural diagram of a passive mixer based on normal temperature semiconductor pulse provided in embodiment 1 of the present invention;
fig. 6 is a graph of test results of a passive mixer based on normal temperature semiconductor pulse provided in embodiment 1 of the present invention;
fig. 7 shows an input power and an output oscillation frequency f of a normal temperature semiconductor pulse-based rf microwave oscillator according to embodiment 2 of the present invention when the input frequency is 578.65MHz r A relationship diagram;
fig. 8 shows the f of a heterojunction-containing transistor in the method for stabilizing frequency based on normal temperature semiconductor pulse according to embodiment 3 of the present invention r Spectral density with f p A power variation curve;
fig. 9 is a graph of output phase noise in the clock distribution based on normal temperature semiconductor pulse provided in embodiment 4 of the present invention;
fig. 10 shows the pump microwave f input in the clock distribution based on normal temperature semiconductor pulse according to embodiment 4 of the present invention p Frequency and output signal f r Is a frequency relation of (a) and (b).
Detailed Description
The present invention will be further explained below with reference to the drawings in order to facilitate understanding of technical contents of the present invention to those skilled in the art.
FIG. 3 is a schematic diagram of a semiconductor pulse at room temperature according to the present invention; comprising the following steps: the output end of the first matching network 11 is connected with the drain electrode of the transistor 10 containing the heterojunction, the input end 12 of the second matching network is connected with the source electrode of the transistor 10 containing the heterojunction, and the grid electrode of the transistor containing the heterojunction is grounded through the resonance network; the first matching network input feeds into the pump microwaves.
The purpose of the first matching network 11 is to achieve matching of the input impedance to the drain impedance of the transistor with heterojunction, so that the pump microwaves can be fed into the transistor 10 with heterojunction with higher efficiency; the purpose of the second matching network 12 is to achieve impedance matching of the source impedance of the heterojunction-containing transistor to the output port, so that the output microwave signal can be smoothly transmitted.
Fig. 4 shows a working schematic diagram of a normal temperature semiconductor pulse provided by the invention. When the pulse device works, the ground state energy level E 0 Polarization of (2)Excimer is excited to high energy level E h ＝E 0 +h·f p (h is Planck constant, f p Is the pump frequency); when E is h The unstable polaritons at the energy level radiate energy as they transition down to lower energy levels. In order to form stable energy radiation, a resonant network is used at its resonant frequency f r An energy path of a given energy level is provided, as shown in fig. 3, with a transition condition provided by its resonant tank. In this way, the excited polaritons will be at energy level E r ＝E h -h·f r ＝E 0 +h·(f p -f r ) Up to the maximum transition rate. Thus, polaritons are first derived from E h Transition to E r Radiation generating frequency f a ＝f p -f r Then from E r Transition to E 0 Radiation generating frequency f r 。
The normal-temperature semiconductor pulse provided by the invention has the characteristics of simple structure, normal-temperature condition and capability of working without laser serving as a pump, and can be widely applied to the fields of medicine, safety, sensing, quantum technology, electronics and the like.
Example 1
The embodiment provides a passive mixer based on normal-temperature semiconductor pulse, as shown in fig. 5, the passive mixer comprises an LO filter, a matching network A thereof, a band-pass filter, a matching network D thereof, a transistor B containing heterojunction, a low-pass filter and a matching network C thereof, wherein the output end of the LO filter and the matching network thereof are connected with the drain electrode of the transistor containing heterojunction, the input end of the low-pass filter and the matching network thereof are connected with the source electrode of the transistor containing heterojunction, and the grid electrode of the transistor containing heterojunction is connected with the band-pass filter and the matching network thereof; the input end of the LO filter and the matching network A feeds in pumping microwave, and the input end of the bandpass filter and the matching network D inputs signal frequency f r 。
Wherein the LO filter guarantees f p Signal pass, f r And f a A barrier; band-pass filter guarantee f r Pass, f p And f a A barrier; low pass filter guarantee f a Pass, f p And (3) blocking.
The LO filter and the matching network A thereof aim to isolate the LO port from the signal input port, prevent the signal from leaking out, and ensure the matching between the ports. The purpose of the band-pass filter and the matching network D thereof is to ensure the matching of the signal input ports and reduce the return loss, and simultaneously, the input signals are filtered to filter out useless interference. The purpose of the low-pass filter and its matching network C is to achieve matching of the ports while filtering out unwanted terms in the output spectrum, preserving the required terms.
The working principle of the normal temperature semiconductor microwave passive mixer of this embodiment is shown in fig. 4, and when the mixer works, the transistor containing heterojunction is pumped with microwave f p Excited, polaritons are formed by the initial energy level E 0 Transition to the excited state energy level E h This frequency can be considered as the mixer local oscillator frequency. At this time, the signal f is input r The excited state polariton is formed by the excited state energy level E according to the input signal frequency h Transition down to lower energy level E r Output frequency f a ＝f p -f r Signal mixing is completed.
Fig. 6 is a graph of test results of a passive mixer based on normal temperature semiconductor pulse provided in embodiment 1 of the present invention; as can be seen from fig. 6, the present invention can implement passive mixing.
The passive mixer based on normal temperature semiconductor pulse provided in embodiment 1 has the advantages of simple structure, small required local oscillation power, frequency conversion gain and the like, effectively solves the problems of high frequency conversion loss, large required local oscillation power and the like of the traditional passive mixer, and can be widely applied to the fields of communication, sensing, quantum technology, electronics and the like.
Example 2
The present embodiment provides a rf microwave oscillator based on normal temperature semiconductor pulse of the present invention, which has the same structure as the semiconductor pulse (as shown in fig. 3). The working principle is as follows: the frequency f of the pump microwave to be input p As a bias signal, the input pump microwave power is used as a control signal, and the pump microwave is excited to polaritons in the high-energy heterojunction-containing transistorThe feedback provided by the resonant network at its resonant frequency transitions to a designated energy level within the energy level region first and then to the ground state energy level, thereby achieving a stable oscillating output. For example, on the premise of determining the pump frequency to be 578.65MHz, the output oscillation frequency f can be changed by changing the power of the input pump microwave r As shown in fig. 7.
The radio frequency microwave oscillator of the embodiment has simple structure and convenient use, can work only by receiving pumping microwaves through an external antenna or a transmission line without adding direct current bias and control voltage, and can be widely applied to various fields of medicine, safety, sensing, quantum technology, electronics and the like.
Example 3
The embodiment provides a frequency stabilization method based on normal temperature semiconductor pulse, which excites polaritons in a transistor containing a heterojunction to a high energy level through pump microwaves received by a transmission line or an external antenna, and a resonance network provides a specified energy path at the resonance frequency of the polaritons, so that the polaritons excited to the high energy level transition to the specified energy level in an energy level region, and stable oscillation output is generated.
Fig. 8 shows the f of a heterojunction-containing transistor in the method for stabilizing frequency based on normal temperature semiconductor pulse according to embodiment 3 of the present invention r Spectral density with f p A power variation curve; fixed input pump microwave f p Changing the input power P thereof in A self-locking phenomenon occurs, i.e. when the input power reaches a certain specific range (frequency stabilizing range), the output signal f increases with the increase of the input power r Is a frequency lock of (c). By utilizing the phenomenon, pump microwaves with the power being a fixed value in the frequency stabilizing range are fed in, so that stable oscillation output can be obtained.
Example 4
The embodiment provides a clock distribution method based on normal temperature semiconductor pulse, which inputs a pump microwave signal with the frequency of 578.65MHz and changes the input power P in Recording the frequency change of the output signal to obtain a change curve shown in fig. 8; fixed input pump microwave f p Changing the input power P thereof in Self-assembly occursThe locking phenomenon, i.e. when the input power reaches a certain specific range (frequency-stabilizing range), the output signal f increases with the input power r Is a frequency lock of (c). By utilizing the phenomenon, pump microwaves with the power being a fixed value in the frequency stabilizing range are fed through the receiving antenna or the transmission line, namely, stable clock output is generated, and the stable clock signals can be transmitted through the transmitting antenna and then received through the corresponding receiver, so that the wireless clock distribution can be realized. As can be seen from fig. 8, the input power P in Between-8.3 dBm and-7.3 dBm, the frequency of the output signal is kept around 72MHz, namely, the self-locking phenomenon occurs.
The stability of the self-locking timing output signal is detected below. Frequency f p Is 578.65MHz and power P in Pump microwave of-7.82 dBm is fed into the high electron mobility transistor through the first matching network, inductance and capacitance values of the input matching network and the output matching network are adjusted, drain and source impedances of the transistor are matched to 50Ω, and an input resonance point f is formed t ＝f p Is matched to 578.65GHz, and the output resonance point is matched to f' r The phase noise of the transmit antenna front-end signal was tested, and the result is shown in fig. 9. As can be seen from FIG. 9, the operating frequency is 72.33MHz, and the phase noise is-113.1 dBc/Hz when the frequency offset is 100 KHz; when the frequency offset is 10KHz, the phase noise is-112.4 dBc/Hz; when the frequency offset is 1KHz, the phase noise is-98.7 dBc/Hz. The test result shows that the self-locking timing occurs, the output phase noise index is excellent, and the frequency stabilization performance is outstanding.
Fixed input pump microwave power P in For-7.82 dBm, change the frequency f of the input signal p The frequency value of the output signal fr is tested, and the result is shown in fig. 10. It was found that when the power of the input pump microwave was a certain value, the pump microwave f p Can control the frequency of the oscillating output signal f r The frequency is thus sized so that tuning of the clock signal can be achieved.
Claims (10)
1. A method for realizing normal-temperature semiconductor pulse is characterized in that polaritons in a transistor containing a heterojunction are excited to a high energy level by pumping microwaves, a resonant network provides a specified energy path at the resonant frequency of the polaritons, so that the polaritons excited to the high energy level downwards transit to a specified energy level in an energy level area, and electromagnetic waves are radiated to the outside.
2. The method for realizing normal-temperature semiconductor pulse according to claim 1, wherein the polaritons excited to a high energy level first transit to a prescribed energy level, and the frequency of radiation generating microwaves is determined according to the frequency of the input pump microwaves and the resonance frequency of the resonance network; then transitions from the designated energy level to the ground state energy level, the radiation produces a frequency equal to the resonant frequency of the resonant network.
3. The normal-temperature semiconductor pulse comprises a first matching network, a second matching network, a transistor containing a heterojunction and a resonant network, wherein the output end of the first matching network is connected with the drain electrode of the transistor containing the heterojunction, the input end of the second matching network is connected with the source electrode of the transistor containing the heterojunction, and the grid electrode of the transistor containing the heterojunction is grounded through the resonant network; the first matching network input feeds into the pump microwaves.
4. A semiconductor pulse according to claim 3, wherein the heterojunction-containing transistor is a heterojunction bipolar transistor or a field effect transistor.
5. The ambient semiconductor pulse of claim 4, wherein the field effect transistor is a metal-oxide semiconductor field effect transistor or a high electron mobility transistor.
6. A method for realizing a passive mixer based on normal temperature semiconductor pulse as claimed in claim 3, characterized in that the polarization in the transistor containing heterojunction is excited to a high energy level by pumping microwaves, which provide local oscillation frequency f p The method comprises the steps of carrying out a first treatment on the surface of the At the input signal frequency f r After that, the polaritons excited to a high energy level transition downward to a specified energy level within the energy level region according to the input signal frequencyOutput frequency f a Signal mixing is completed.
7. A passive mixer based on normal temperature semiconductor pulse according to claim 3, comprising an LO filter and its matching network, a band-pass filter and its matching network, a transistor containing heterojunction, a low-pass filter and its matching network, wherein the output end of the LO filter and its matching network is connected with the drain electrode of the transistor containing heterojunction, the input end of the low-pass filter and its matching network is connected with the source electrode of the transistor containing heterojunction, and the gate electrode of the transistor containing heterojunction is connected with the band-pass filter and its matching network.
8. A method for implementing a radio frequency microwave oscillator based on normal temperature semiconductor pulse as claimed in claim 3, characterized in that pump microwaves excite polaritons in a transistor containing heterojunction to a high energy level, and the resonance frequency of a resonant network playing a feedback role in the oscillator is controlled according to the input pump microwave power, so that the polaritons excited to the high energy level transition to a designated energy level in an energy level region first and then transition to a ground state energy level, thereby implementing stable oscillation output.
9. A method for stabilizing frequency based on normal temperature semiconductor pulse as claimed in claim 3, wherein the power of the fed pump microwave is a constant value in the stabilizing frequency range of the transistor containing heterojunction, so as to obtain stable oscillation output.
10. Use of a frequency stabilization method based on normal temperature semiconductor pulses according to claim 9 in clock distribution.
Priority Applications (2)
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| CN104466639A (en) * | 2014-12-17 | 2015-03-25 | 中国人民解放军国防科学技术大学 | Intermediate infrared gas laser of multi-wavelength overtone cascade time sequence laser pump |
| CN105514791A (en) * | 2016-01-19 | 2016-04-20 | 北京镭宝光电技术有限公司 | Laser device and method for generating adjustable series pulse by square wave pumping to adjust Q for multiple times |
| CN210092555U (en) * | 2019-07-05 | 2020-02-18 | 电子科技大学 | Normal temperature semiconductor pulse device and passive mixer based on same |
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| GB0505646D0 (en) * | 2005-03-18 | 2005-04-27 | Oxborrow Mark | Solid-state maser oscillator of high frequency stability and low phase noise |
| US8340145B2 (en) * | 2009-05-29 | 2012-12-25 | Eth Zurich | Microwave circuit |
| JP6838326B2 (en) * | 2016-09-07 | 2021-03-03 | セイコーエプソン株式会社 | Light emitting element modules, atomic oscillators, electronic devices and mobiles |
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| CN101034871A (en) * | 2007-02-16 | 2007-09-12 | 上海杰盛无线通讯设备有限公司 | Power circuit of field effect tube microwave amplifier |
| CN104466639A (en) * | 2014-12-17 | 2015-03-25 | 中国人民解放军国防科学技术大学 | Intermediate infrared gas laser of multi-wavelength overtone cascade time sequence laser pump |
| CN105514791A (en) * | 2016-01-19 | 2016-04-20 | 北京镭宝光电技术有限公司 | Laser device and method for generating adjustable series pulse by square wave pumping to adjust Q for multiple times |
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