CN110202595B - Artificial skin sensor with double-layer sparse array structure - Google Patents
Artificial skin sensor with double-layer sparse array structure Download PDFInfo
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- CN110202595B CN110202595B CN201910533476.4A CN201910533476A CN110202595B CN 110202595 B CN110202595 B CN 110202595B CN 201910533476 A CN201910533476 A CN 201910533476A CN 110202595 B CN110202595 B CN 110202595B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J13/00—Controls for manipulators
- B25J13/08—Controls for manipulators by means of sensing devices, e.g. viewing or touching devices
- B25J13/081—Touching devices, e.g. pressure-sensitive
- B25J13/084—Tactile sensors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/205—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using distributed sensing elements
Abstract
The invention discloses an artificial skin sensor with a double-layer sparse array structure, which is used for solving the problems of how to make a double-layer sparse array detection result more accurate and how to measure a stress surface and the stress condition of the back of the stress surface; the array structure comprises an upper layer array and a lower layer array, wherein the upper layer array and the lower layer array respectively comprise four micro-structures; the four micro-structures of the upper layer array and the lower layer array are distributed in a square or rectangular shape; according to the invention, through the conducting wire connected between the two layers of microstructure arrays, the stress condition of the opposite surface of the stress surface is measured, so that the opposite surface of the stress surface can be judged to bear large force; through the distance arrangement of the upper and lower layers of the microstructure bodies, the influence on an experimental result caused by induction generated after the conducting wire is electrified can be avoided to the maximum extent.
Description
Technical Field
The invention relates to the technical field of sensor preparation, in particular to an artificial skin sensor with a double-layer sparse array structure.
Background
The touch sensor is an indispensable means for the robot hand to acquire touch information, and according to the information provided by the touch sensor, the robot can reliably grab a target object and can further sense the physical characteristics of the size, the shape, the weight, the hardness and the like of the target object. The flexible three-dimensional force touch sensor array can be adhered to an object with a non-planar surface and accurately detect contact forces in three directions, namely, the intelligent skin becomes an important tool for acquiring information such as all-dimensional grip strength, moment, sliding and the like by a robot hand. Tactile sensors are used in robots to mimic tactile functions. The touch sense is an important sensory function when a person directly contacts with the external environment, and the development of a touch sensor meeting the requirement is one of the technical keys in the development of robots. With the development of microelectronics and the advent of various organic materials, various tactile sensor development schemes have been proposed. The touch sensors can be roughly divided into a contact sensor, a force-moment sensor, a pressure sensor, a sliding sensor and the like according to functions;
the invention discloses a three-dimensional flexible touch sensor array which is named as CN103134622A and is formed by 9N-type microstructures, each microstructure is made of conductive rubber, electric contacts are distributed on the microstructures, each row comprises 3, the number of the rows is 3, and each row is connected with each column through a lead. When the array is acted by external force, the shape of the microstructure body can be changed, namely deformation is generated, the deformation can cause the resistance of the microstructure body to be changed, the change value of the resistance of the microstructure body after the force is applied is measured by an instrument, and the force applied to the array and the component force of the array in the direction of X, Y, Z can be estimated by combining a formula; the existing defects are as follows: the single-layer array cannot measure the stress condition of the back of the stress surface at the same time.
Disclosure of Invention
The invention aims to provide an artificial skin sensor with a double-layer sparse array structure; according to the invention, through the conducting wire connected between the two layers of microstructure arrays, the stress condition of the opposite surface of the stress surface is measured, so that the opposite surface of the stress surface can be judged to bear large force; the distance between the upper and lower layers of the microstructure bodies is set, so that the influence of induction generated after the conducting wire is electrified on an experimental result can be avoided to the maximum extent;
the technical problem to be solved by the invention is as follows:
(1) how to make the detection result of the double-layer sparse array more accurate;
(2) how to measure the stress condition of the stress surface and the back surface of the stress surface.
The purpose of the invention can be realized by the following technical scheme: the artificial skin sensor with the double-layer sparse array structure comprises an upper layer array and a lower layer array, wherein the upper layer array and the lower layer array respectively comprise four micro-structures, and the four micro-structures of the upper layer array and the lower layer array are respectively in square or rectangular distribution;
the four microstructures of the lower array comprise a microstructure next A1, a microstructure next A2, a microstructure next three A3 and a microstructure next four A4; the four microstructures of the upper layer array comprise a first microstructure B1, a second microstructure B2, a third microstructure B3 and a fourth microstructure B4;
the first microstructure B1 of the upper array is positioned between the first microstructure A1 of the lower array and the second microstructure A2 of the lower array, the distance between the first microstructure B1 and the first microstructure A1 is 8-10mm, the second microstructure B2 of the upper array is positioned outside the second microstructure A2 of the lower array, and the distance between the second microstructure B2 and the second microstructure A2 is 8-10 mm;
each of the four micro-structural bodies consists of a first cylinder, a second cylinder and a third cylinder;
the electric contact arranged at the center of the lower surface of the first column of each microstructure body in the upper layer array is connected with the electric contact arranged at the center of the upper surface of the first column of each microstructure body in the lower layer array through a lead;
the distance between the upper microstructure B1 and the lower microstructure A1 and the lower microstructure A2 of the upper and lower layers and the distance between the upper microstructure B2 and the lower microstructure A2 of the upper and lower layers are 20-30 mm.
Preferably, the first cylinder is vertical to the horizontal plane, the upper surface of the second cylinder is fixedly connected with one side surface of the first cylinder, the included angle between the first cylinder and the second cylinder ranges from 45 degrees to 60 degrees, and the lower surface of the second cylinder and the lower surface of the first cylinder are on the same plane; the lower surface of the third column body is fixedly connected with the other side surface of the first column body, the included angle between the third column body and the third column body ranges from 45 degrees to 60 degrees, and the upper surface of the third column body and the upper surface of the first column body are on the same plane; the plane of the second cylinder axis is vertical to the plane of the third cylinder axis; the centers of the upper surface and the lower surface of the first column body are respectively provided with a first electric contact and a second electric contact; the center of the lower surface of the second column body is provided with a third electric contact; and the center of the upper surface of the third column body is provided with an electric contact four.
Preferably, the second electrical contact of the next microstructure a1 is connected to the second electrical contact of the third microstructure A3 through a conducting wire; the third electrical contact A1 of the lower micro-structure body is connected with the third electrical contact A3 of the lower micro-structure body through a lead; the electric contact four of the lower A1 of the microstructure is connected with the electric contact four of the lower A2 of the microstructure through a lead; the first electric contact A1 of the first microstructure lower A2 is connected with the first electric contact A of the second microstructure lower A3578 through a lead; the second electric contact of the second microstructure A2 is connected with the second electric contact of the fourth microstructure A4 through a lead; the third electrical contact of the second microstructure A2 is connected with the third electrical contact of the fourth microstructure A4 through a lead; the first electric contact of the lower four A4 of the microstructure is connected with the first electric contact of the lower two A2 of the microstructure through a lead; the electric contact four of the lower microstructure A4 is connected with the electric contact four of the lower microstructure A2 through a lead.
The invention has the beneficial effects that: the invention also arranges a lead in the upper and lower layers of microstructure bodies, when the upper layer microstructure body array is stressed, the stress condition of the lower layer microstructure body array can be measured, and the stress magnitude can be calculated by combining a formula according to the deformation degree of the microstructure body; thereby judging how much force the opposite surface of the stress surface can bear; through the distance arrangement of the upper and lower layers of the microstructure bodies, the influence on an experimental result caused by induction generated after the conducting wire is electrified can be avoided to the maximum extent.
Drawings
The invention will be further described with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of the decoupling algorithm of the dual layer sensor of the present invention;
FIG. 2 is a schematic view of an embodiment of a microstructure in a two-layer sensor array of the present invention;
figure 3 is a schematic of a3 x 3 array of bi-layer sensors of the present invention;
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-3, the present invention is an artificial skin sensor with a double-layer sparse array structure, which includes an upper layer array and a lower layer array, wherein the upper layer array and the lower layer array both include four microstructures, and the four microstructures of the upper layer array and the lower layer array are both square or rectangular;
the four microstructures of the lower array comprise a microstructure next A1, a microstructure next A2, a microstructure next three A3 and a microstructure next four A4; the four microstructures of the upper layer array comprise a first microstructure B1, a second microstructure B2, a third microstructure B3 and a fourth microstructure B4;
when the double-layer sparse array structure is projected in the vertical direction, the first B1 on the microstructure body of the upper layer array is positioned between the first A1 and the second A2 of the microstructure body of the lower layer array, the horizontal distance between the first B1 on the microstructure body and the first A1 of the microstructure body is 8-10mm, the second B2 on the microstructure body of the upper layer array is positioned outside the second A2 of the microstructure body of the lower layer array, and the horizontal distance between the second B2 on the microstructure body and the second A2 of the microstructure body is 8-10 mm; deformation data of the lower-layer array can be measured more conveniently after stress;
each of the four microstructures is composed of a first column 31, a second column 41, and a third column 51;
the electric contact 312 arranged at the center of the lower surface of the first column 31 of each microstructure in the upper array is connected with the electric contact 311 arranged at the center of the upper surface of the first column 31 of each microstructure in the lower array through a conducting wire;
when the double-layer sparse array structure is projected in the forward direction, the vertical distance between the first B1 on the upper layer of the microstructure and the first A1 under the microstructure and the second A2 under the microstructure as well as the vertical distance between the second B2 on the microstructure and the second A2 under the microstructure are both 20-30mm, so that the influence on an experimental result caused by induction generated after a conducting wire is electrified can be avoided to the maximum extent;
table 1 is a data table of experimental results of the upper and lower arrays at different distances under the condition of the preset force of 50N
| Distance/ |
15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 |
| Experimental results/N | 49.617 | 49.820 | 49.889 | 49.990 | 49.991 | 49.995 | 49.995 | 49.995 |
| Error/%) | 0.766 | 0.36 | 0.222 | 0.02 | 0.018 | 0.01 | 0.01 | 0.01 |
| Distance/mm | 23 | 24 | 25 | 30 | 31 | 32 | 33 | 54 |
| Results of the experiment | 49.996 | 49.994 | 49.995 | 49.889 | 49.882 | 49.750 | 49.680 | 49.610 |
| Error/%) | 0.008 | 0.012 | 0.01 | 0.222 | 0.236 | 0.5 | 0.64 | 0.78 |
Through realizing that the data can be got, when upper and lower two-layer distance progressively increases, be normal distribution to the influence of experimental result, when the distance is less than 25mm, receive the influence that produces after the wire circular telegram and the pressure of exerting, the error reduces gradually along with the increase of distance, when the distance is greater than 25mm, receive the influence that produces after the wire circular telegram and diminish, but the distance increases, the error increases gradually along with the increase of distance. Therefore, the distance between the upper layer and the lower layer is set to be 20-30 mm; the influence on the experimental result due to induction generated after the conducting wire is electrified can be avoided to the maximum extent;
the first column 31 is vertical to the horizontal plane, the upper surface of the second column 41 is fixedly connected with one side surface of the first column 31, the included angle between the first column 31 and the second column 41 ranges from 45 degrees to 60 degrees, and the lower surface of the second column 41 and the lower surface of the first column 31 are on the same plane; the lower surface of the third column 51 is fixedly connected with the other side surface of the first column 31, the included angle between the third column 51 and the first column 31 ranges from 45 degrees to 60 degrees, and the upper surface of the third column 51 and the upper surface of the first column 31 are on the same plane; the plane of the axis of the second cylinder 41 is perpendicular to the plane of the axis of the third cylinder 51; the centers of the upper surface and the lower surface of the first column 31 are respectively provided with a first electric contact 311 and a second electric contact 312; the center of the lower surface of the second cylinder 41 is provided with an electric contact point III 411; the center of the upper surface of the third cylinder 51 is provided with an electric contact point four 511; the cross section of each cylindrical cuboid is square or rectangular, and the cross section area is 2-10mm2Wherein, the height of the vertically placed column body is 8-12 mm; the microstructure body is formed by three sections of columns in a connecting mode and is formed by punching and molding a die;
the upper layer array and the lower layer array are arranged in 2 rows in each layer, wherein 2 rows are formed in each layer. In each layer, an electric contact at the center of the upper surface of each cylindrical cuboid is connected with a longitudinal wire, 4 longitudinal wires are arranged on the same plane and are parallel to each other, an electric contact at the center of the lower surface of each cylindrical cuboid is connected with a transverse wire, 4 transverse wires are also parallel to each other on the same plane, the transverse wires are spatially vertical to the longitudinal wires, and the two layers are also connected through the electric contacts by the wires; the conducting wires are also arranged in the upper and lower layers of the microstructure bodies, so that even if the upper layer of microstructure body array is stressed, the stress condition of the lower layer of microstructure body array can be measured, and the stress magnitude can be calculated by combining a formula according to the deformation degree of the microstructure body;
the first cylinder 31, the second cylinder 41 and the third cylinder 51 are all made of conductive rubber or other flexible conductive materials with piezoresistive effect, and the conducting wires are flexible conducting wires;
selecting a first layer of lead, taking the first layer of lead as a base line, detecting resistance values between all lower layer of leads and the first layer of lead, and respectively forming three resistance matrixes according to the corresponding three sections of columns, wherein the three resistance matrixes respectively correspond to the following three sections of columns: resistance change in the vertical z direction, resistance change in the horizontal x direction, and resistance change in the horizontal y direction; the force Fz is determined as the change in the resistance value between the upper conductors 1, 4, 14, 16 and the lower conductors 5, 10, 18, 21 and the intermediate conductors 7, 8, 19, 20; the force Fx is determined as the change in resistance between the upper 1, 4, 14, 16 and lower 6, 11, 17, 22 and intermediate 7, 8, 19, 20 conductors; the force Fy is determined as the change in the resistance value between the upper conductors 2, 3, 13, 15 and the lower conductors 5, 10, 18, 21 and the intermediate conductors 7, 8, 19, 20;
when the upper surface of the sensor is pressed vertically downwards, the corresponding first cylinder 31 is compressed to generate deformation; when the upper surface of the sensor is subjected to a shear force in the direction along the inclination of the cylindrical rectangular parallelepiped, for example, a force in the positive direction along the x-axis and a force in the negative direction along the y-axis, the corresponding second cylinder 41 and third cylinder 51 are stretched to generate deformation; when the sensor upper surface is subjected to a shearing force against the cylinder inclination direction, for example, a force in the x-axis reverse direction and the y-axis forward direction, the corresponding second cylinder 41 and third cylinder 51 are compressed to generate deformation;
when the solid material is acted by external force, the resistance change is as follows:
wherein
The piezoresistive effect is that the resistivity of a solid material is changed after the solid material is subjected to external force;
is a strain effect; and then separately incorporating rubberForce sensitive equation of state
、
、
Respectively obtain forces
The size of the rectangular solid is respectively a length change matrix of the cylindrical cuboid in the x direction, the y direction and the z direction; the function k in the equation is determined by the rubber material properties, for example: under ideal conditions, the pressure and the length change are in a direct proportional relationship, and the larger the length change is, the larger the corresponding force is; the corresponding equation of state is
Wherein the value range of k is 9.0N-20.0N, and L is the initial length of the sensor when the sensor is not stressed;
the traditional array sensor is arranged on a mechanical arm, and after the mechanical arm is subjected to external force, only the stress on a single surface can be measured, and the stress condition on the opposite surface of the stress surface is difficult to know; by using the artificial skin sensor with the double-layer sparse array structure, after one surface of the mechanical arm is acted by external force, the stress condition of the opposite surface of the stress surface can be measured through the conducting wire connected between the two layers of microstructure arrays, so that the opposite surface of the stress surface can be judged to bear large force without being damaged;
the working principle of the invention is as follows: the conducting wires are also arranged in the upper and lower layers of the microstructure bodies, when the upper layer microstructure body array is stressed, the stress condition of the lower layer microstructure body array can be measured, and the stress magnitude is calculated by combining a formula according to the deformation degree of the microstructure body; thereby judging how much force the opposite surface of the stress surface can bear; through the distance arrangement of the upper and lower layers of the microstructure bodies, the influence on an experimental result caused by induction generated after the conducting wire is electrified can be avoided to the maximum extent.
The foregoing is merely exemplary and illustrative of the present invention and various modifications, additions and substitutions may be made by those skilled in the art to the specific embodiments described without departing from the scope of the invention as defined in the following claims.
Claims (3)
1. The artificial skin sensor with the double-layer sparse array structure is characterized by comprising an upper layer array and a lower layer array, wherein the upper layer array and the lower layer array respectively comprise four micro-structures which are distributed in a square or rectangular shape;
the four microstructures of the lower array include a microstructure next (a 1), a microstructure next two (a 2), a microstructure next three (A3), and a microstructure next four (a 4); the four microstructures of the upper array comprise a first microstructure (B1), a second microstructure (B2), a third microstructure (B3) and a fourth microstructure (B4);
the structure distribution of the upper layer array corresponds to the structure distribution of the lower layer array one by one, the lower one (A1) of the microstructure body of the lower layer array is connected with the upper end of the lower two (A2) of the microstructure body through a single lead, the lower three (A3) of the microstructure body is connected with the upper end of the lower four (A4) of the microstructure body through a single lead, the lower one (A1) of the microstructure body is connected with the bottom end of the lower three (A3) of the microstructure body through two leads, and the lower two (A2) of the microstructure body is connected with the bottom end of the lower four (A4) of the microstructure body through two leads;
when the double-layer sparse array structure is projected in the vertical direction, the upper part (B1) of the microstructure of the upper layer array is positioned between the lower part (A1) of the microstructure of the lower layer array and the lower part (A2) of the microstructure, the horizontal distance between the upper part (B1) of the microstructure and the lower part (A1) of the microstructure is 8-10mm, the upper part (B2) of the microstructure of the upper layer array is positioned outside the lower part (A2) of the microstructure of the lower layer array, and the horizontal distance between the upper part (B2) of the microstructure and the lower part (A2) of the microstructure is 8-10 mm;
each of the four microstructures is composed of a first column (31), a second column (41) and a third column (51);
a second electric contact (312) arranged at the center of the lower surface of the first column (31) of each microstructure body in the upper array is connected with a first electric contact (311) arranged at the center of the upper surface of the first column (31) of each microstructure body in the lower array through a lead;
when the double-layer sparse array structure is projected from the front direction, the vertical distance between the upper one (B1) of the microstructure on the upper layer and the lower one (A1) of the microstructure and the lower two (A2) of the microstructure and the vertical distance between the upper two (B2) of the microstructure and the lower two (A2) of the microstructure are 20-30 mm.
2. The artificial skin sensor with the double-layer sparse array structure according to claim 1, wherein the first cylinder (31) is vertical to the horizontal plane, the upper surface of the second cylinder (41) is fixedly connected with one side surface of the first cylinder (31), the included angle between the first cylinder (31) and the second cylinder (41) ranges from 45 degrees to 60 degrees, and the lower surface of the second cylinder (41) and the lower surface of the first cylinder (31) are on the same plane; the lower surface of the third column body (51) is fixedly connected with the other side surface of the first column body (31), the included angle range of the third column body (51) and the first column body (31) is 45-60 degrees, and the upper surface of the third column body (51) and the upper surface of the first column body (31) are on the same plane; the plane of the axis of the second cylinder (41) is vertical to the plane of the axis of the third cylinder (51); the structure of the upper layer array is completely consistent with that of the first column (31) in the lower layer structure, and the centers of the upper surface and the lower surface of the first column (31) are respectively provided with a first electric contact (311) and a second electric contact (312); the center of the lower surface of the second cylinder (41) is provided with a third electric contact (411); the center of the upper surface of the third cylinder (51) is provided with an electric contact point four (511).
3. The artificial skin sensor with double-layer sparse array structure of claim 1, wherein the second electrical contact (312) of the first microstructure (A1) is connected with the second electrical contact (312) of the third microstructure (A3) through a wire; the electric contact III (411) of the next microstructure body (A1) is connected with the electric contact III (411) of the next microstructure body (A3) through a lead; the electric contact four (511) of the next microstructure (A1) is connected with the electric contact four (511) of the next microstructure (A2) through a lead; the first electric contact (311) of the next microstructure body (A1) is connected with the first electric contact (311) of the second microstructure body (A2) through a conducting wire; the second electrical contact (312) of the second microstructure lower (A2) is connected with the second electrical contact (312) of the fourth microstructure lower (A4) through a lead; the electric contact three (411) of the lower micro-structure two (A2) is connected with the electric contact three (411) of the lower micro-structure four (A4) through a lead; the first electric contact (311) of the lower four microstructure body (A4) is connected with the first electric contact (311) of the lower two microstructure body (A2) through a conducting wire; the fourth electrical contact (511) of the fourth microstructure lower (a 4) and the fourth electrical contact (511) of the second microstructure lower (a 2) are connected by a wire.
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| CN202568218U (en) * | 2012-03-06 | 2012-12-05 | 河南海王星科技发展有限公司 | Pulse condition measurement contact based on array-type pressure sensor |
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| CN101738275B (en) * | 2008-11-04 | 2011-07-20 | 中国科学院合肥物质科学研究院 | Three-dimensional flexible touch sensor and decoupling method thereof |
| CN102207415B (en) * | 2011-03-11 | 2013-08-14 | 西安交通大学 | Conductive-rubber-based flexible array clip pressure sensor and manufacturing method |
| CN102435376A (en) * | 2011-10-24 | 2012-05-02 | 中北大学 | Flexible three-dimensional force sensor and decoupling method and manufacturing method thereof |
| CN103134622B (en) * | 2013-01-31 | 2014-12-10 | 中国科学院合肥物质科学研究院 | Three-dimensional soft tactile sensor array |
| CN103575432B (en) * | 2013-11-22 | 2015-09-02 | 沈阳工业大学 | A kind of flexible three-dimensional contact force matrix sensing device |
| CN204604356U (en) * | 2015-04-30 | 2015-09-02 | 广东双虹新材料科技有限公司 | Flexible responsive artificial skin |
| CN105671654B (en) * | 2016-01-21 | 2018-06-26 | 合肥工业大学 | A kind of ion induction type artificial skin array structure and preparation method thereof |
| DE102017109487B4 (en) * | 2017-05-03 | 2021-09-23 | Pilz Gmbh & Co. Kg | Multi-layer, tactile sensor |
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| CN202568218U (en) * | 2012-03-06 | 2012-12-05 | 河南海王星科技发展有限公司 | Pulse condition measurement contact based on array-type pressure sensor |
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Inventor after: Song Yang Inventor after: Hu Yong Inventor after: Wang Feilu Inventor after: Chen Yufeng Inventor after: Li Jun Inventor before: Wang Feilu Inventor before: Hu Yong Inventor before: Song Yang Inventor before: Chen Yufeng Inventor before: Li Jun |
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