CN110189785A - A kind of phase transition storage read/writing control method and system based on dual threshold gate tube - Google Patents
A kind of phase transition storage read/writing control method and system based on dual threshold gate tube Download PDFInfo
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- CN110189785A CN110189785A CN201910282767.0A CN201910282767A CN110189785A CN 110189785 A CN110189785 A CN 110189785A CN 201910282767 A CN201910282767 A CN 201910282767A CN 110189785 A CN110189785 A CN 110189785A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
Abstract
The invention discloses a kind of phase transition storage read/writing control methods and system based on dual threshold gate tube；Read/writing control method includes: (1) after selecting operated storage unit, applies different bias voltages at the both ends of storage unit；(2) data stored in current memory cell are obtained according to the size of current for flowing through storage unit；(3) if current operation is read operation, output data；If current operation is write operation, data to be written is compared with the data of reading, and carries out corresponding operating to storage unit according to comparison result.In the present invention, dual threshold gate tube needs voltage-type excitation to open conducting, phase change memory medium needs current mode excitation to carry out stablizing reset, set operation, the present invention is directed to both properties, it proposes to switch over the phase transition storage of 1S1R structure the operation schemes of different driving sources, be controlled with achieving the purpose that the phase transition storage to 1S1R structure such as is gated, reads, program at the operations.
Description
Technical field
The invention belongs to Phase change memory technology fields, more particularly, to a kind of phase transformation based on dual threshold gate tube
Memory read/write control method and system.
Background technique
Phase transition storage is the nonvolatile memory based on certain chalcogenide compound film, can be non-by phase-change material
Crystalline state and crystalline state realize that quick, reversible variation shows as high resistant when material is amorphous state to reach the function of storing data
State indicates data ' 0 ', when material is crystalline state, shows as low resistance state, indicates data ' 1 '.
Conventional phase change memory uses 1D1R more, and the memory cell structure of 1T1R, wherein 1T1R structure is a transistor
It is connected with phase-change memory cell, which is conducive to peripheral circuit and controls storage array, but in realization to a certain degree
On limit the scale of storage array；1D1R structure is that a diode is connected with phase-change memory cell, and same effectively realization is outer
Control of the circuit to storage array is enclosed, and array area is smaller, but the driving capability of diode is smaller, manufacture small size can pass through
The process is more complicated for the diode of high current.
There are also a kind of phase transition storage based on dual threshold gating device, being used as using phase-change material for storage unit is deposited
The storage medium of memory element, while dual threshold gating device being used to flow through the selector of storage medium electric current as control, it deposits
Storage media couples to form storage unit with selector, referred to as 1S1R structure.Since the driving capability of dual threshold gating device is stronger,
The memory cell area that this kind of structure is formed simultaneously is also smaller, is conducive to the three-dimensionally integrated of phase transition storage, thus be it is a kind of compared with
For ideal memory cell structure.
When being write to the type storage unit, wipe operation, first control selections device is needed to open, then storage is sent into excitation and is situated between
Matter changes the state of storage medium, is operated.Opening for selector is carried out with shutdown by controlling its both end voltage, is elected to
When selecting the partial pressure at device both ends greater than the threshold voltage that it is opened, selector is opened, and electric current is allowed to pass through storage unit；Work as selector
When the partial pressure at both ends is less than the threshold voltage that it is opened, selector is turned off, and the electric current that can flow through storage unit is almost nil.Selection
After device is opened, it is sent into the state that excitation changes storage medium, the change direction of storage medium state is by the heat that receives and cold
But mode determines: when carrying out Set operation, relatively low heat and relatively slow cooling procedure being needed to realize；When carrying out Reset operation,
Relatively high heat and rapid cooling procedure is needed to realize.The experiment of this field shows since phase-change material is there are threshold effect,
It is generally motivated using current mode in real process to carry out Set and Reset and operate.
Since the storage unit of 1S1R structure is two terminal device, carries out gating process and reading and writing process is both needed to by two
Port carries out.This requires when being operated to storage unit, either gating process or reading and writing process, selector and
Storage unit must and can only be controlled simultaneously, therefore be directed to such novel memory, need to propose a kind of new read-write side
Case and read-write system realize its read-write capability.
Summary of the invention
In view of the drawbacks of the prior art, the purpose of the present invention is to provide a kind of phase change memories based on dual threshold gate tube
Device read/writing control method and system, it is intended to solve to operate 1S1R structural phase-change memory using single excitation types in the prior art
Bring control complexity and the poor problem of stability.
The present invention provides a kind of phase transition storage read/writing control methods based on dual threshold gate tube, including following steps
It is rapid:
(1) after selecting operated storage unit, apply different bias voltages at the both ends of the storage unit；
(2) the data Data_ stored in current memory cell is obtained according to the size of current for flowing through the storage unit
Read；
(3) if current operation is read operation, output data Data_Read；If current operation is write operation, will
The data Data_In of write-in is compared with the data Data_Read of reading, and according to comparison result to the storage unit into
Row corresponding operating.
Further, the voltage difference Vread for being applied to the storage unit both ends meets the following conditions: Vth0 >
Vread > Vth1；Wherein, Vth0 is phase-change memory cell open when being amorphous state needed for threshold voltage, Vth1 deposits for phase transformation
Threshold voltage needed for being opened when storage unit is crystalline state.
Further, in step (3), if current operation is write operation, and the data Data_In being written is equal to reading
When data Data_Read out, then without carrying out write operation, the operation cycle of the unit is terminated.
Further, in step (3), if current operation is write operation, and the data Data_In being written is not equal to
When the data Data_Read of reading, then operation is programmed to the storage unit.
Further, operation is programmed to the storage unit specifically:
Gate voltage is applied to the storage unit, gate tube is opened, and gate tube resistance value reduces；
Program current is applied to the storage unit after removing gate voltage, storage medium is undergone phase transition, storage medium resistance
Value variation；
The bias voltage applied after program current to the storage unit under unselected state is removed, gate tube is closed, choosing
Siphunculus resistance value increases.
Further, it is motivated when gating storage unit using voltage-type, uses current mode when gating memory cells
Excitation；And the switching time between the excitation of the switching time or same type difference amplitude between different types of excitation is small
In delay time of the dual threshold gate tube from unlatching to closing.
The present invention also provides a kind of phase transition storage read-write control systems based on dual threshold gate tube, comprising: operation
Judgment module, pulse-width controlled module, excitation switch selecting module, address decoding module, sense amplifier module, program current produce
Raw module and voltage bias module；The first input end of the operation judges module is for receiving write enable signal, operation judges
Second input terminal of module reads enable signal for receiving, and the third input terminal of operation judges module is for receiving input data；
Operation judges module is used to judge current operation to be performed class according to the write enable signal, reading enable signal and input data
Type；The input terminal of the pulse-width controlled module is connected to the output end of operation judges module, and pulse-width controlled module is used for basis and wants
The action type of execution generates a series of pulse signal of different in width；The input terminal of the address decoding module is for receiving ground
Location signal, address decoding module are used to carry out decoded operation according to the address signal to determine the storage unit chosen, and will
Decode result output；The output end for motivating the first input end for switching selecting module to be connected to pulse-width controlled module, second
Input terminal is connected to the output end of address decoding module, and excitation switch selecting module is used for according to the pulse signal and described
Decode result output WL voltage control signal, BL voltage control signal, Set control signal, Reset control signal and Read control
Signal；The input terminal of the sense amplifier module is connected to the first output end of excitation switch selecting module, sense amplifier
Module is used to control the storing data for the storage unit that signal-obtaining is chosen according to the Read, and exports to storage chip；Institute
The first input end for stating program current generation module is connected to the second output terminal of excitation switch selecting module, and program current generates
Second input terminal of module is connected to the third output end of excitation switch selecting module, and program current generation module is controlled for Set
Electric current needed for signal and Reset control signal processed provides operation to the storage unit chosen, realizes phase change memory medium to crystalline substance
State or amorphous transformation；The first input end of the voltage bias module is connected to the 4th defeated of excitation switch selecting module
Outlet, the second input terminal of voltage bias module are connected to the 5th output end of excitation switch selecting module, voltage bias module
For being mentioned respectively with unchecked storage unit according to the WL voltage control signal and the BL voltage control signal to choosing
For different voltage bias.
Further, pulse-width controlled module includes: the synchronous state machine of the sequence and width for control wave；
The synchronous state machine includes: idle state, read operation state, gating operation state, SET operation state, RESET operation state
With end state；Institute's idle state and the unselected voltage bias of end state output control signal；Institute's read operation state output is read
Pulse control signal；Gated mode of operation exports gate voltage pulse control signal；Institute's SET operation state output SET current
Pulse control signal；Institute's RESET operation state output RESET current impulse controls signal.
Further, the excitation switch selecting module includes: logic gate, for the decoding result and institute
Corresponding control signal is obtained after stating the pulse control signal progress logical gate operations of pulse-width controlled module output.
Further, the program current generation module includes: operational amplifier, resistance and current mirror,
The operational amplifier obtains band gap voltage after carrying out clamper processing to bandgap voltage reference；
The band gap voltage load obtains program current on the resistance,
The current mirror is for exporting the program current.
Further, between the excitation of the switching time between different types of excitation or same type difference amplitude
Switching time be less than dual threshold gate tube from open to closing delay time.
In the present invention, first apply a gate voltage, the voltage is different and different according to the state of phase change memory medium；When
When phase change memory medium is in crystalline state, the gate voltage is smaller；When phase change memory medium is in amorphous state, the gate voltage compared with
Greatly；Switch to current excitation after gate voltage, select to have the current signal of suitable amplitude and pulsewidth to storage unit into
Row programming operation.
The present invention proposes to control using synchronous state machine according to the physical characteristic of dual threshold gate tube and phase change memory medium
The needs of the phase transition storage read-write operation of 1S1R structure are adapted to orderly to switch the scheme of different driving sources, i.e., first use voltage
Type driving source opens dual threshold gate tube, then with current mode driving source program phase-change storage medium.The program is swashed using voltage-type
Operation dual threshold gate tube is encouraged, the voltage triggered feature of dual threshold gate tube has been agreed with；The program uses current mode excitation operation
Phase transition storage, avoids threshold effect of the phase change memory medium in amorphous state, and programmed result is reliable and stable；Program switching
Different driving sources are operated, and the scheme of excitation size is controlled than the grid voltage of independent control switch pipe operationally more
Simply and rapidly.
Detailed description of the invention
Fig. 1 is the implementation process of the phase transition storage read/writing control method provided by the invention based on dual threshold gate tube
Figure；
Fig. 2 is the phase transition storage read/writing control method kind programming provided in an embodiment of the present invention based on dual threshold gate tube
The specific implementation flow chart of operation；
Fig. 3 is the specific of the phase transition storage read/writing control method provided in an embodiment of the present invention based on dual threshold gate tube
Implementation flow chart；
Fig. 4 is the excitation switching circuit schematic diagram of single storage unit provided in an embodiment of the present invention；
Fig. 5 (a) is the excitation switch-over control signal timing diagram without executing when write operation of the invention；
Excitation switch-over control signal timing diagram when Fig. 5 (b) is Set operation of the invention；
Excitation switch-over control signal timing diagram when Fig. 5 (c) is Reset operation of the invention；
Fig. 6 is each module connection diagram of read-write control system provided in an embodiment of the present invention.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
The storage unit of 1S1R structure is coupled to form by dual threshold gate tube and phase change memory medium, is a kind of two end-apparatus
Part.Result of study in the art shows that dual threshold gate tube needs to motivate its conducting of operation with voltage-type；Phase change memory medium
It is suitble to be resetted (Reset), set (Set) operation with current mode excitation.For the different operation demand of two kinds of materials, this hair
It is bright to propose that one kind is connected with each other from read operation to gating operation, then to the operating method of write operation whole flow process and each functional module
Composed system.
As shown in Figure 1, the phase transition storage read/writing control method provided in an embodiment of the present invention based on dual threshold gate tube
Implementation process includes:
Firstly, applying at the both ends of the unit different after determining operated storage unit by address decoding module
Bias voltage, remember that the voltage difference at both ends is Vread, the voltage pulse width length of application is denoted as T1.Since phase change memory medium exists
When amorphous state and crystalline state, resistance value gap is larger, different to the partial pressure situation of dual threshold gate tube, therefore remembers when phase change memory is situated between
When matter is amorphous state (high value), the threshold voltage needed for unit is opened is Vth0；When phase change memory medium is crystalline state (low-resistance
Value) when, the required threshold voltage that unit is opened is Vth1.Unit unlatching is meant that dual threshold gate tube is in voltage drive
Under low resistance (on state) is become by high value (nonconducting state).The size of above three voltage magnitude meets following differ
Formula: Vth0 > Vread > Vth1；
After being applied with Vread voltage to unit both ends, sense amplifier module can be according to by flowing through storage unit
Size of current value come judge active cell storage data, be denoted as Data_Read.This step can use common technology in field
Scheme is realized.Vread voltage pulsewidth length T1 need to meet two conditions: can make sense amplifier module output data；Guarantee
Storage medium is not undergone phase transition.
Then, next step operation judges are made according to external control signal.If current operation is read operation, just
Storing data obtained in previous step is exported, the operation cycle of the unit is terminated.
If current operation is write operation, is controlled according to the data Data_In of write-in and operated in next step.If write-in
Data Data_In be equal to before the data Data_Read that reads, then without carrying out write operation, to the operation cycle of the unit
Terminate.If Data_In is not equal to Data_Read, it to be programmed operation to the unit, is described as follows:
After the end-of-pulsing of Vread, another voltage pulse can be triggered and be applied to storage unit both ends, voltage magnitude note
For Vots, pulsewidth is denoted as T2, this voltage pulse is used for opening unit.If Data_Read=0, Vots=Vth0；If
Data_Read=1, then Vots=Vth1.T2 length need to meet two conditions: guarantee that storage medium is not undergone phase transition；It can make to deposit
Storage unit is opened.
After the end-of-pulsing of Vots, a current impulse can be triggered and be applied to storage unit, this current impulse is for making phase
Become storage medium and generates phase transformation.If Data_In=1, current pulse amplitude Iset, pulsewidth is denoted as T3, the current impulse
Phase change memory medium can be made to become crystalline state, corresponding data " 1 ".If Data_In=0, current pulse amplitude Ireset,
Pulsewidth is T4, which can make phase change memory medium become amorphous state, corresponding data " 0 ".
It is worth noting that the voltage difference at device both ends may during Vots is switched to Iset Ireset
It can be reduced to also small degree Vhold poorer than the minimum sustaining voltage for keeping OTS to be connected, may cause OTS closing.But ability
It is in domain studies have shown that OTS is from state to closed state certain delay time, during this period of time, if Iset
Or Ireset is applied in storage unit, the voltage at the both ends OTS can be more than or equal to Vhold, so that current impulse can be suitable
Benefit passes through the storage unit, is programmed operation to storage medium.
As shown in Fig. 2, programming operation specifically: apply gate voltage at device both ends, gate tube resistance reduces, device
Part overall electrical resistance resistance value is reduced to and the comparable level of phase change memory medium resistance；Switch driving source, remove gate voltage,
Apply program current.The size and pulsewidth of electric current are determined by action type.After the program current of application, phase change memory medium
It undergoes phase transition, resistance variation.Apply unselected bias voltage again at this time, gate tube resistance increases, the whole electricity of device
Resistance resistance value is increased to and the comparable level of gate tube resistance.
Phase transition storage read-write control system provided in an embodiment of the present invention based on dual threshold gate tube includes: that voltage is inclined
Set module, program current generation module, sense amplifier module, address decoding module, operation judges module, pulse-width controlled module
Selecting module is switched with excitation.Address signal outside address decoding module reception carries out decoded operation, and decoding result is transmitted to
Excitation switch selecting module；Read-write enable signal and input data outside the reception of operation judges module generate action type letter
Number it is transmitted to excitation switch selecting module；The Read control signal that excitation switch selecting module generates is transmitted to sense amplifier module,
The Set control of generation and Reset control signal are transmitted to program current generation module, the control of BL voltage and the control of WL voltage of generation
It is transmitted to voltage bias module.
Voltage bias module is used to provide the voltage drive with various amplitudes；Program current generation module is for providing tool
There is the current excitation of various amplitudes；Sense amplifier module is used to read the storing data in storage unit；Address decoding module
For choosing the corresponding storage unit of input address signal；Operation judges module is for determining which kind of the current operation period will execute
Action type；Pulse-width controlled module is for pulse width signal needed for generating respective operations；Excitation switch selecting module is used for
Select different types of driving source.
The present invention proposes orderly to switch different driving sources according to the physical characteristic of dual threshold gate tube and phase change memory medium
Scheme adapt to the needs of the phase transition storage read-write operation of 1S1R structure, there is the advantages of simple and quick, high stability.
As an embodiment of the present invention, the phase change memory medium material in storage unit can for two kinds or with
The chalcogenide compound of upper stable resistance state, such as GST
As an embodiment of the present invention, the material of the dual threshold gate tube in storage unit should have larger switch
Than, such as SiTe, ZnTe.
The implementation of technical method is described further with reference to the accompanying drawing:
The present invention provides a kind of phase transition storage read/writing control methods and system based on dual threshold gate tube, it is therefore an objective to
The control method of the operations such as gating, reading, programming is provided for the phase change memory device of 1S1R structure.
The English name occurred in specific embodiment and in attached drawing is essential term in the art, with invention before
The English name meaning occurred in content is identical, and in addition supplement: WL is wordline；BL is bit line.
In embodiments of the present invention, to have, there are two types of for stablizing the phase change memory medium of resistance state.
A kind of implementation flow chart of the read/writing control method in embodiment is shown in Fig. 3, and steps are as follows:
101: storage unit is in unselected state, and the both ends WL and BL need to apply suitable bias voltage, will not with guarantee
Occur the unit will not be falsely dropped it is logical.In one embodiment, WL and BL connects the bias voltage of 1.5V.
102: storage unit is selected, to carry out read operation at this time.BL terminates the voltage of 2.5V, and WL terminates 0V (ground connection),
Duration is 100ns.The data Data_Read of the available reading of the step.
103: judging whether writing for current operation cycle be enabled effective.If yes then enter step 105, if not then
Enter step 104.
104: judging that the reading in current operation cycle is enabled whether effectively.If yes then enter step 111, if not then
Terminate this cycleoperation.
105: judging whether current input data Data_In is equal to the data Data_Read read in step 102.Such as
Fruit is equal to, then terminates this operation cycle；If it is not, then entering step 106.
106: judging whether current input data is equal to " 1 ".107 are entered step if being not equal to, if being equal to
Enter step 108.In the present embodiment, the crystalline state of the corresponding phase change memory medium of data " 1 "；Data " 0 " correspond to phase change memory medium
Amorphous state.
107:BL terminates 2V voltage, and WL terminates 0V (ground connection), continues 10ns.This step can make OTS conducting without changing
The state of phase change memory medium.
108:BL terminates 3V voltage, and WL terminates 0V (ground connection), continues 10ns.This step can make OTS conducting without changing
The state of phase change memory medium.
109: carrying out Reset operation, the end BL inputs the electric current of 80uA, and the end WL ground connection continues 50ns, then terminates this operation
Period.This step can make phase change memory medium become amorphous state.
110: carrying out Set operation, the end BL inputs the electric current of 15uA, and the end WL ground connection continues 200ns, then terminates this operation
Period.This step can make phase change memory medium become crystalline state.
111: exporting the data Data_Read of reading, terminate this operation cycle.
Above-mentioned involved voltage value, current value, duration etc., specific data can be according to material category, size
Etc. the difference of parameters and make and correspondingly adjusting.
Fig. 4 is described in one embodiment, and the excitation switching circuit schematic diagram of single storage unit (is omitted unselected
Excitation under state).201~205 be driving source generation module, current mode or electricity needed for being capable of providing operation storage unit
Die mould excitation.206 be a kind of switching device, is on state when control signal is effective, excitation can be passed to and be deposited
The end BL of storage unit 213 shows 5 such devices in Fig. 4.207 be a kind of selector, according to read data Data_
The numerical value of Read selects different excitations, and specific method described above.208~212 be the control signal of switching device,
Play the role of control excitation switching, usually a series of pulse signal, they are that high level is effective in the present embodiment.
Fig. 5 (a) (b) (c) is described in one embodiment, and control signal 208~212 is executing different operation type
Sequential relationship.Input signal in Fig. 5 (a) (b) (c) can be address signal, read-write enable signal, chip select enable signal, number
According to storage chips such as input signals from external received various signals.
Fig. 5 (a) describes the case where not executing write operation within read operation period or write cycles.When input is believed
It number changes, triggering generates pulse signal 210, duration T 1, this pulse is used to control driving source 203, and to be applied to storage single
The end BL of member 213.
Fig. 5 (b) is described the case where write cycles need to be implemented Set operation.When input signal changes, triggering
Read pulse signal 210, duration T 1 are generated, this pulse is used to control the end BL that driving source 203 is applied to storage unit 213.
After read pulse signal 210, decline edging trigger generates OTS pulse signal 211, duration T 2.OTS pulse signal
211 are used to control the end BL that driving source 204 or 205 is applied to storage unit 213.After OTS pulse signal 211, under
Edging trigger set pulse signal 208, duration T 3 drop.Set pulse signal 208, which is used to control driving source 201 to be applied to, to be deposited
The end BL of storage unit 213.
Fig. 5 (c) is described the case where write cycles need to be implemented Reset operation.When input signal changes, touching
Read pulse signal 210, duration T 1 occurs into, this pulse is used to control the BL that driving source 203 is applied to storage unit 213
End.After read pulse signal 210, decline edging trigger generates OTS pulse signal 211, duration T 2.OTS pulse letter
Numbers 211 are used to control the end BL that driving source 204 or 205 is applied to storage unit 213.After OTS pulse signal 211,
Decline edging trigger reseting pulse signal 209, duration T 4.Reseting pulse signal 209, which is used to control driving source 202, to be applied to
The end BL of storage unit 213.
Fig. 6 describes a kind of system block diagram for realizing read/writing control method of the invention and lists part signal of interest.
409 be memory peripheral circuit part, and 408 be storage array part, and the two generally passes through WL, BL and is interconnected coupling.It is external
Input signal offer address signal, clock signal, reading enable, write enabled and input data, by 409 processing, provide to 408
Suitable excitation is finally completed data write-in or obtains output data.
Wherein, operation judges module 401 enables according to external reading, writes enabled and input data, and judgement will currently execute
It is any in tri- kinds of Read, Set or Reset operations, send result to pulse-width controlled module 402.
Pulse-width controlled module 402 generates a series of pulse signal of different in width to sharp according to operation to be performed type
Encourage switch selecting module 403.
Meanwhile address decoding module 404 carries out decoded operation according to externally input address signal and determines the storage chosen
Decoding result is sent to excitation switch selecting module 403 by unit.
Excitation switch selecting module 403 handles the input signal from 404 and 402, by the WL voltage control of generation
Signal and BL voltage control signal processed is defeated by voltage bias module 407, and Set is controlled signal and Reset control signal is defeated by volume
Read control signal is inputted sense amplifier module 405 by journey current generating module 406.
Voltage bias module 407 can provide different voltage bias with unchecked storage unit to choosing respectively.
Electric current needed for program current generation module 406 can provide the storage unit chosen operation, realizes that phase transformation is deposited
Storage media is to crystalline state or amorphous transformation.
Sense amplifier module 405 can read the storing data for the storage unit chosen, and defeated to outside storage chip
Portion.
When work, the externally input signal of storage chip is first received by address decoding module and operation judges module, including
Address, write it is enabled, read enabled, input data etc., obtain action type signal and decoding consequential signal after treatment.Pulsewidth control
Molding root tuber controls the timing of entire reading/writing pulses signal, output pulse signal according to action type signal.Excitation switch selection mould
Root tuber exports the operating control signal on corresponding WL, BL to voltage bias module, program current according to decoding result and pulse signal
Generation module, sense amplifier module finally obtain corresponding voltage or current signal to storage unit.
As an embodiment of the present invention, operation judges module 401 is realized by a 3-8 decoder, is write to input
Enabled, reading enables and input data is decoded, the action type control signal executed.
Pulse-width controlled module 402 is by a synchronous state machine come the sequence and width of control wave.The state machine has
Six states, idle state, gating operation state, SET operation state, RESET operation state, terminate state at read operation state,
Each state output controls signal accordingly.Idle state and the end unselected voltage bias of state output；Read operation state is defeated
Read pulse controls signal out；Gating operation state output gate voltage pulse control signal；SET operation state output SET current
Pulse control signal；RESET operation state output RESET current impulse controls signal.Transfer sequence and Fig. 3 stream between state
Journey is consistent.
Address decoding module 404 is realized that the input signal quantity of decoder is determined by address signal bit wide by a decoder
Fixed, the output of decoder is corresponding WL, BL selection signal of address signal.
Excitation switch selecting module 403 by with or logic gate realize, to the decoding result from address decoding module 404
Logical operation is carried out with the pulse signal of pulse-width controlled module, obtains corresponding control signal.
Voltage bias module 407 obtains band gap voltage, then obtained by electric resistance partial pressure using the clamping action of operational amplifier
Then required voltage size connects buffer band dynamic load.
Program current generation module 406 obtains band gap voltage, load is specific big using the clamping action of operational amplifier
On small resistance, electric current needed for obtaining, electric current export structure is a current mirror, obtains the electric current needed by current mirror.
405 core circuit of sense amplifier module is a comparator, by comparing the electricity of reference circuit and storage circuit
Size output 0 or 1 is flowed, its essence is the resistance value for judging that memory is current, sensitive when the resistance value that it sets less than one
Amplifier output 1, the sense amplifier output 0 when it is greater than the resistance value of same one setting.
One embodiment of the present invention above described embodiment only expresses, description is more specific detailed, but not
Limitation of the scope of the invention therefore can be interpreted as.It should be pointed out that for those skilled in the art, not departing from this
Under the premise of inventive concept, several adaptability modification and improvement can also be made, these are all within the scope of protection of the present invention.Cause
This, protection scope of the present invention should be determined by the appended claims.As it will be easily appreciated by one skilled in the art that the foregoing is merely
Presently preferred embodiments of the present invention is not intended to limit the invention, and done within the spirit and principles of the present invention
What modifications, equivalent substitutions and improvements etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of phase transition storage read/writing control method based on dual threshold gate tube, which is characterized in that include the following steps:
(1) after selecting operated storage unit, apply different bias voltages at the both ends of the storage unit；
(2) the data Data_Read stored in current memory cell is obtained according to the size of current for flowing through the storage unit；
(3) if current operation is read operation, output data Data_Read；If current operation is write operation, will write-in
Data Data_In be compared with the data Data_Read of reading, and according to comparison result to the storage unit carry out phase
It should operate.
2. phase transition storage read/writing control method as described in claim 1, which is characterized in that be applied to the storage unit two
The voltage difference Vread at end meets the following conditions: Vth0 > Vread > Vth1；
Wherein, Vth0 is phase-change memory cell open when being amorphous state needed for threshold voltage, Vth1 is that phase-change memory cell is
Threshold voltage needed for being opened when crystalline state.
3. phase transition storage read/writing control method as claimed in claim 1 or 2, which is characterized in that in step (3), if
Current operation is write operation, and when the data Data_In being written is equal to the data Data_Read read, then without carrying out writing behaviour
Make, the operation cycle of the unit is terminated.
4. phase transition storage read/writing control method as described in any one of claims 1-3, which is characterized in that in step (3),
If current operation be write operation, and be written data Data_In not equal to read data Data_Read when, then to described
Storage unit is programmed operation.
5. phase transition storage read/writing control method as claimed in claim 4, which is characterized in that compiled to the storage unit
Journey operation specifically:
Gate voltage is applied to the storage unit, gate tube is opened, and gate tube resistance value reduces；
Program current is applied to the storage unit after removing gate voltage, storage medium is undergone phase transition, and storage medium resistance value becomes
Change；
The bias voltage applied after program current to the storage unit under unselected state is removed, gate tube is closed, gate tube
Resistance value increases.
6. phase transition storage read/writing control method according to any one of claims 1-4, which is characterized in that gating storage unit
The excitation of Shi Caiyong voltage-type is motivated when gating memory cells using current mode；And the switching between different types of excitation
Switching time between the excitation of time or same type difference amplitude is less than dual threshold gate tube from unlatching prolonging to closing
The slow time.
7. a kind of phase transition storage read-write control system based on dual threshold gate tube characterized by comprising operation judges mould
Block (401), pulse-width controlled module (402), excitation switch selecting module (403), address decoding module (404), sense amplifier
Module (405), program current generation module (406) and voltage bias module (407)；
The first input end of the operation judges module (401) is for receiving write enable signal, and the of operation judges module (401)
Two input terminals read enable signal for receiving, and the third input terminal of operation judges module (401) is for receiving input data；Operation
Judgment module (401) is used to judge current operation to be performed according to the write enable signal, reading enable signal and input data
Type；
The input terminal of the pulse-width controlled module (402) is connected to the output end of operation judges module (401), pulse-width controlled module
(402) for generating a series of pulse signal of different in width according to operation to be performed type；
The input terminal of the address decoding module (404) is used for for receiving address signal, address decoding module (404) according to institute
It states address signal and carries out decoded operation to determine the storage unit chosen, and will decoding result output；
The output end for motivating the first input end for switching selecting module (403) to be connected to pulse-width controlled module (402), second
Input terminal is connected to the output end of address decoding module (404), and excitation switch selecting module (403) is used to be believed according to the pulse
Number and the decoding result output WL voltage control signal, BL voltage control signal, Set control signal, Reset control signal
Signal is controlled with Read；
The input terminal of the sense amplifier module (405) is connected to the first output end of excitation switch selecting module (403), spirit
Quick amplifier module (405) is used to control the storing data for the storage unit that signal-obtaining is chosen according to the Read, and exports
To storage chip；
The first input end of the program current generation module (406) is connected to the second defeated of excitation switch selecting module (403)
Outlet, the second input terminal of program current generation module (406) are connected to the third output of excitation switch selecting module (403)
End, program current generation module (406) provide behaviour to the storage unit chosen for Set control signal and Reset control signal
Electric current needed for making realizes phase change memory medium to crystalline state or amorphous transformation；
The first input end of the voltage bias module (407) is connected to the 4th output end of excitation switch selecting module (403),
Second input terminal of voltage bias module (407) is connected to the 5th output end of excitation switch selecting module (403), voltage bias
Module (407) is used for single with unchecked storage to choosing according to the WL voltage control signal and the BL voltage control signal
Member provides different voltage bias respectively.
8. phase transition storage read-write control system as claimed in claim 6, which is characterized in that the pulse-width controlled module
(402) include: sequence and width for control wave synchronous state machine；
The synchronous state machine includes: idle state, read operation state, gating operation state, SET operation state, RESET operation
State and end state；
Institute's idle state and the unselected voltage bias of end state output control signal；
Institute's read operation state output read pulse controls signal；
Gated mode of operation exports gate voltage pulse control signal；
Institute's SET operation state output SET current pulse control signal；
Institute's RESET operation state output RESET current impulse controls signal.
9. phase transition storage read-write control system as claimed in claims 6 or 7, which is characterized in that the excitation switch selection
Module (403) includes: logic gate, is believed for the pulse control to the decoding result and pulse-width controlled module output
Number carry out logical gate operations after obtain corresponding control signal.
10. such as the described in any item phase transition storage read-write control systems of claim 7-9, which is characterized in that different types of
Switching time between excitation or the switching time between the excitation of same type difference amplitude be less than dual threshold gate tube from
Open the delay time of closing.
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