CN110181355B - Grinding device, grinding method and wafer - Google Patents
Grinding device, grinding method and wafer Download PDFInfo
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- CN110181355B CN110181355B CN201910567467.7A CN201910567467A CN110181355B CN 110181355 B CN110181355 B CN 110181355B CN 201910567467 A CN201910567467 A CN 201910567467A CN 110181355 B CN110181355 B CN 110181355B
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- disc
- bearing disc
- guide ring
- ground
- edge guide
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
Abstract
The invention provides a grinding device, a grinding method and a wafer, wherein the device comprises: an upper fixed disc; a lower fixed disc; the bearing disc is arranged between the upper fixed disc and the lower fixed disc, a plurality of bearing disc holes are formed in the bearing disc, and elements to be ground are borne in the bearing disc holes; the driving mechanism is driven by the driving mechanism, the bearing disc rotates around the axis of the bearing disc and revolves around the center of the lower fixed disc so as to move relative to the upper fixed disc and the lower fixed disc to grind an element to be ground; the bearing disc hole is internally provided with an edge guide ring, the element to be ground is sleeved in the edge guide ring and is arranged in the bearing disc hole in a manner of freely moving relative to the bearing disc hole, so that the element to be ground drives the edge guide ring to move when moving in the grinding process. The grinding device, the grinding method and the wafer can minimize the mechanical damage collision of the edge part of the wafer waiting for the relatively weak surface of the grinding element, and can also improve the fracture and the fragment defect rate of the element to be ground caused by the mechanical damage collision.
Description
Technical Field
The invention relates to the field of semiconductor material manufacturing, in particular to a grinding device, a grinding method and a wafer.
Background
Silicon wafers (Si wafers) are widely used as materials for manufacturing semiconductor devices. The silicon wafer is a wafer in which the same kind of silicon is grown on a silicon surface. Silicon wafers are widely used because they have excellent purity and crystal characteristics in a region where semiconductors are integrated, and are advantageous for yield and device characteristics of semiconductor devices (devices).
Generally, the wafer fabrication process can be generally divided into processes such as slicing (slicing), edge grinding (edge grinding), lapping (lapping), etching (cosmetic etching), double-side grinding (double-side grinding), double-side polishing (double-side polishing), edge polishing (edge polishing), and final polishing (final polishing). Among them, in the slicing process, a grown cylindrical silicon single crystal ingot is generally cut into a wafer form by a wire saw or the like by a czochralski method (Czozhralski) or the like, and the surface and outer peripheral appearance of the cut wafer are not uniformly formed and are irregular, so that it is necessary to grind the outer peripheral surface thereof by an edge grinding process, to form the entire shape of the wafer into a circular shape having a predetermined diameter size, and to prevent the wafer edge from colliding with a polishing carrier disk and being damaged to cause a chipping phenomenon by edge shape (edge shape) processing of the wafer in a subsequent polishing process. In the polishing step, the wafer is polished to improve the flatness of the wafer by improving saw marks (saw marks) on the wafer surface generated in the dicing step. In the subsequent etching step, chemical etching is performed with an alkaline etching solution to remove mechanical damage (damage) in the polishing process. Then, the surface defect states such as chipping (chip) and crack (crack) at the wafer edge portion remaining without being removed in the polishing (lapping) and etching (etching) processes are removed again by an edge grinding (edge grinding) secondary process, and the edge profile of the wafer is processed so as to change in accordance with the specification requested by the customer.
However, in the conventional art, although the edge grinding (edge grinding) operation is performed before the lapping step, the wafer edge (wafer edge) still collides with the lapping carrier (carrier) and the wafer break (wafer break) occurs. By analyzing the wafer break (wafer break) and edge break (chip) types generated in the polishing (lapping) process in the conventional process, it was found that the crystal orientation break (break) defect rate of the wafer is a large proportion, and the chip (chip) defect also exhibits imprint damage (damage) caused by the polishing (lapping) process, so that it was possible to judge that the reason for the wafer break is that although the wafer edge portion is processed before the polishing (lapping) operation, the wafer rotates and revolves due to the rotation of the wafer itself and the rotation of the carrier plate during the polishing (lapping) operation, the wafer linearly moves in the carrier plate hole (carrier hole), and direct collision friction (collision friction) between the carrier plate hole (lapping carrier hole) and the wafer (wafer) still occurs, and damage (damage) occurs. Therefore, in order to reduce damage to the edge portion of the wafer, a resin layer fixed in the hole of the susceptor is inserted (insert) into the edge portion of the hole of the susceptor to minimize collision with the edge portion of the wafer. Although the occurrence of wafer breakage (wafer break) and chipping (chip) defects in the lapping (lapping) process is reduced, the resin layer is fixed in the carrier plate hole, and the wafer also moves linearly up, down, left, and right relative to the resin layer in the carrier plate hole during lapping, so that the wafer edge (wafer edge) portion is still vulnerable to lapping damage.
Disclosure of Invention
The invention aims to provide a grinding device, a grinding method and a wafer, which can minimize the mechanical damage collision of the edge part of the wafer waiting for the relatively weak surface of a grinding element and can also improve the fracture and chip defect incidence of the grinding element caused by the mechanical damage collision.
The technical scheme provided by the invention is as follows:
a grinding device is used for grinding an element to be ground; the device comprises:
an upper fixed disc;
the lower fixed disc is arranged opposite to the upper fixed disc;
the bearing disc is arranged between the upper fixed disc and the lower fixed disc, a plurality of bearing disc holes are formed in the bearing disc, and the elements to be ground are borne in the bearing disc holes;
the bearing disc rotates around the axis of the bearing disc and revolves around the center of the lower fixed disc under the driving of the driving mechanism so as to move relative to the upper fixed disc and the lower fixed disc to grind the element to be ground;
the grinding device is characterized in that an edge guide ring is arranged in the bearing disc hole, the element to be ground is sleeved in the edge guide ring, and the edge guide ring is arranged in the bearing disc hole in a manner of freely moving relative to the bearing disc hole, so that the element to be ground drives the edge guide ring to move when moving in the grinding process.
Further, the edge guide ring is a ring-shaped structure made of a resin material.
Further, the outer diameter of the edge guide ring is smaller than the inner diameter of the bearing disc hole, so that a first movable gap is formed between the edge guide ring and the bearing disc hole.
Further, the difference between the outer diameter of the edge guide ring and the inner diameter of the bearing disc hole is 0.2 mm.
Further, the inner diameter of the edge guide ring is larger than the outer diameter of the element to be grinded, so that a second movable gap is formed between the element to be grinded and the edge guide ring.
Further, the difference between the inner diameter of the edge guide ring and the outer diameter of the element to be ground is 0.5 to 1 mm.
Further, the thickness of the edge guide ring in the direction perpendicular to the disc surface of the bearing disc is the same as the thickness of the bearing disc.
Further, a central gear is arranged in the center of the lower fixed plate, and gear teeth are arranged on the outer peripheral surface of the central gear; the circumferential edge of the lower fixed disc is provided with an internal gear, and the inner circumferential surface of the internal gear is provided with gear teeth; the bearing disc is meshed between the central gear and the internal gear, and the driving mechanism drives the lower fixed disc, the central gear and the internal gear to rotate so as to drive the bearing disc to rotate around the axis of the bearing disc and revolve around the center of the lower fixed disc.
A grinding method for grinding an element to be ground by using the grinding apparatus as described above, the method comprising:
when the element to be ground is loaded in the bearing disc hole of the bearing disc, the edge guide ring is simultaneously loaded between the element to be ground and the bearing disc;
the bearing disc is driven by a driving mechanism to rotate around the axis of the bearing disc and revolve around the center of the lower fixed disc, so that the bearing disc moves relative to the upper fixed disc and the lower fixed disc to grind the element to be ground.
A wafer is manufactured by the method.
The beneficial effects brought by the invention are as follows:
in the above-mentioned solution, by disposing the edge guide ring between the edge portion of the to-be-polished element (e.g. wafer) and the edge of the carrier plate hole, and disposing the edge guide ring in the carrier plate hole in a free state (free state) capable of freely moving relative to the carrier plate hole instead of being fixedly disposed in the carrier plate hole, when the to-be-polished element moves relative to the carrier plate during polishing, the edge guide ring can move together with the to-be-polished element, so as to minimize the mechanical damage collision of the edge portion with a relatively fragile surface of the to-be-polished element, and also improve the occurrence rate of fracture and chipping of the to-be-polished element caused thereby.
Drawings
FIG. 1 is a schematic view of a polishing apparatus according to an embodiment of the present invention;
fig. 2 is a plan view of a lower surface plate in the polishing apparatus according to the embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to solve the problem that the edge part of the wafer is easy to be damaged mechanically in the grinding process of the wafer in the prior art, the embodiment of the invention provides a grinding device, which can minimize the mechanical damage collision of the edge part of the wafer, which is relatively fragile on the surface of a grinding element waiting for grinding, and can also improve the fracture and fragment defect rate of the grinding element caused by the mechanical damage collision.
The embodiment of the invention provides a grinding device, which is used for grinding an element to be ground. The element to be ground can be various elements to be ground, for example, a wafer, but is not limited to a wafer.
The polishing apparatus provided by the embodiment of the present invention will be described in detail below by taking the device to be polished as a wafer as an example.
As shown in fig. 1 and 2, an embodiment of the present invention provides a polishing apparatus including:
an upper surface plate 100;
a lower surface plate 200 disposed opposite to the upper surface plate 100;
the carrier plate 300 is disposed between the upper fixed plate 100 and the lower fixed plate 200, a plurality of carrier plate holes 310 are formed in the carrier plate 300, and the carrier plate holes 310 carry the elements to be ground 10;
the bearing disc 300 rotates around the axis thereof and revolves around the center of the lower fixed disc 200 under the driving of the driving mechanism so as to move relative to the upper fixed disc 100 and the lower fixed disc 200 and grind the element to be ground 10;
an edge guide ring 400 is arranged in the carrier plate hole 310, the element to be ground 10 is sleeved in the edge guide ring 400, and the edge guide ring 400 is arranged in the carrier plate hole 310 in a manner of being freely movable relative to the carrier plate hole 310, so that the element to be ground 10 drives the edge guide ring 400 to move when moving in the grinding process.
With the above-mentioned solution, the polishing apparatus according to the embodiment of the present invention can load the to-be-polished device 10 into the carrier plate hole 310, and simultaneously load the edge guide ring 400 between the to-be-polished device 10 and the carrier plate 300, and by disposing the edge guide ring 400 between the edge of the to-be-polished device 10 (e.g. wafer) and the edge of the carrier plate hole 310, and by disposing the edge guide ring 400 itself in the carrier plate hole 310 in a free state (free state) that is freely movable with respect to the carrier plate hole 310 instead of a fixed type, the problem that the to-be-polished device 10, e.g. wafer, performs a linear rotation movement in the carrier plate 300 during the polishing operation and directly collides with the carrier plate 300 made of spring steel (spring steel) can be solved by further disposing an edge guide ring 400 between the to-be-polished device 10 and the carrier plate hole 310, even if the edge of the element 10 to be ground collides with the edge (hole edge) of the carrier plate hole 310, the middle edge guide ring 400 moves together with the element 10 to be ground due to the linear velocity of the edge of the element 10 to be ground (wafer edge) when not fixed in the carrier plate hole 310, thereby playing a role of buffering, alleviating the direct collision friction between the element 10 to be ground and the carrier plate 300 during the grinding process, further minimizing the mechanical damage collision of the relatively fragile edge of the surface of the element 10 to be ground, and improving the occurrence rate of fracture and chipping of the element 10 to be ground.
An exemplary embodiment of a polishing apparatus provided by an embodiment of the present invention is described below.
In an exemplary embodiment, as shown in fig. 1 and 2, the edge guide ring 400 is a ring-shaped structure made of a resin material.
By adopting the above scheme, the edge guide ring 400 is of an annular structure, the ring is sleeved outside the element 10 to be ground, when the element 10 to be ground is loaded in the bearing disc hole 310, the edge guide ring 400 is located between the element 10 to be ground and the bearing disc 300, the edge guide ring 400 is made of resin material, and an effective impact buffering effect can be achieved between the element 10 to be ground and the bearing disc 300. It is understood that the specific material of the edge guide ring 400 is not limited to resin material in practical application.
Further, in an exemplary embodiment, as shown in fig. 1 and 2, the outer diameter of the edge guide ring 400 is smaller than the inner diameter of the carrier plate hole 310 such that there is a first clearance between the edge guide ring 400 and the carrier plate hole 310.
With the above-mentioned solution, the outer diameter of the edge guide ring 400 is smaller than the inner diameter of the carrier plate hole 310, and a first movable gap is provided between the edge guide ring and the carrier plate hole 310, so that it is ensured that the edge guide ring 400 can move together with the element to be ground 10 when the element to be ground 10 moves relative to the carrier plate 300 during the grinding process.
Illustratively, the difference between the outer diameter of the edge guide ring 400 and the inner diameter of the carrier disk bore 310 is 0.2 mm.
With the above-mentioned solution, the difference between the outer diameter of the edge guide ring 400 and the inner diameter of the carrier plate hole 310 can be selected according to the inner diameter of the element 10 to be polished and the inner diameter of the carrier plate hole 310, wherein the impact buffering effect is the best when the difference between the outer diameter of the edge guide ring 400 and the inner diameter of the carrier plate hole 310 is 0.2 mm.
In addition, the inner diameter of the edge guide ring 400 is larger than the outer diameter of the element to be ground 10, so that a second movable gap is formed between the element to be ground 10 and the edge guide ring 400.
With the above-mentioned solution, the inner diameter of the edge guide ring 400 is larger than the inner diameter of the element to be ground 10, and a second movable gap is provided between the edge guide ring and the element to be ground 10, so that it is ensured that the edge guide ring 400 can move together with the element to be ground 10 when the element to be ground 10 moves relative to the carrier plate 300 during the grinding process.
Illustratively, the difference between the inner diameter of the edge guide ring 400 and the outer diameter of the element to be ground 10 is 0.5 to 1 mm.
By adopting the above scheme, the difference between the inner diameter of the edge guide ring 400 and the outer diameter of the element to be ground 10 can be selected according to the inner diameter of the element to be ground 10 and the inner diameter of the disc hole 310, wherein when the difference between the inner diameter of the edge guide ring 400 and the outer diameter of the element to be ground 10 is 0.5-1 mm, the impact buffering effect is optimal.
Further, illustratively, the thickness of the edge guide ring 400 in a direction perpendicular to the plane of the carrier platter 300 is the same as the thickness of the carrier platter 300. In this way, the edge guide ring 400 can be made to have no effect on the grinding plane of the element to be ground 10 during grinding.
Further, in the exemplary embodiment provided by the present invention, as shown in fig. 1 and 2, a central gear 210 is provided at the center of the lower surface plate 200, and the outer circumferential surface of the central gear 210 has gear teeth; the circumferential edge of the lower fixed plate 200 is provided with an inner gear 220, and the inner circumferential surface of the inner gear 220 is provided with gear teeth; the carrier plate 300 is engaged between the sun gear 210 and the internal gear 220, and the driving mechanism drives the lower fixed plate 200, the sun gear 210 and the internal gear 220 to rotate, so as to drive the carrier plate 300 to rotate around its axis and revolve around the center of the lower fixed plate 200.
With the above solution, the center gear 210 is disposed at the center of the lower fixed plate 200(lower plate), the inner gear 220 (inner gear) is disposed at the outer peripheral edge of the lower fixed plate 200, the carrier plate 300 is engaged between the center gear 210 and the inner gear 220, as shown in fig. 1 and fig. 2, in an exemplary embodiment, there are 5 carrier plates 300, each carrier plate 300 has 4 carrier plate holes 310, each carrier plate hole 310 is loaded with one element to be ground 10, 20 elements to be ground 10 are loaded on the 5 carrier plates 300, the material of the carrier plate 300 can be selected from elastic steel (spring steel), and in order to bear the pressure of the cast iron material of the center gear 210(sun gear) and the inner gear 220 (inner gear), the carrier plate 300 is also made of cast iron.
The grinding operation process of the grinding device provided in the above exemplary embodiment is as follows:
when the element 10 to be ground is loaded in the carrier disc hole 310 of the carrier disc 300, the edge guide ring 400 is simultaneously loaded between the element 10 to be ground and the carrier disc 300, the lower fixed disc 200, the internal gear 220 and the 3 parts of the central gear 210 are rotated by the driving mechanism, the carrier disc 300 meshed with the internal gear 220 and the center is rotated, the element 10 to be ground loaded in the carrier disc hole 310 is pulled, the lower fixed disc 200 is rotated to guide the rotation of the element 10 to be ground, and the back surface (back surface) of the element 10 to be ground is ground; the upper surface plate 100 is not rotated but is vertically lowered toward the front surface of the element 10 to be polished while applying a predetermined pressure to the element 10 to be polished, and further, a slurry is supplied to the upper surface plate 100 from a slurry tank (line) separately provided beside the main polishing (main polishing) equipment. Polishing of the element 10 to be polished is performed while a polishing slurry (slurry) is supplied between the upper surface plate 100 and the element 10 to be polished.
Taking the device 10 to be polished as a wafer as an example, the state of the wafer put into the polishing process is a perfect circle type wafer with a uniform diameter, the wafer performs linear movement of the wafer in the carrier plate hole 310 while simultaneously performing rotation (autorotation) of the wafer itself and revolution caused by rotation of the carrier plate 300, and the edge guide ring 400 is inserted in the carrier plate hole 310 in a free state and can perform linear movement with the wafer, thereby reducing direct collision between the wafer and the carrier plate 300 and reducing mechanical damage.
In addition, an embodiment of the present invention further provides a grinding method, in which the grinding apparatus provided in the embodiment of the present invention is used to grind an element to be ground 10, the method includes:
when the to-be-polished element 10 is loaded in the carrier plate hole 310 of the carrier plate 300, the edge guide ring 400 is simultaneously loaded between the to-be-polished element 10 and the carrier plate 300;
the carrier plate 300 is driven by a driving mechanism to rotate around its own axis and revolve around the center of the lower fixed plate 200, so that the carrier plate 300 moves relative to the upper fixed plate 100 and the lower fixed plate 200 to grind the element 10 to be ground.
In addition, the embodiment of the invention also provides a wafer which is manufactured by the method provided by the embodiment of the invention.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. A grinding device is used for grinding an element to be ground; the device comprises:
an upper fixed disc;
the lower fixed disc is arranged opposite to the upper fixed disc;
the bearing disc is arranged between the upper fixed disc and the lower fixed disc, a plurality of bearing disc holes are formed in the bearing disc, and the elements to be ground are borne in the bearing disc holes;
the bearing disc rotates around the axis of the bearing disc and revolves around the center of the lower fixed disc under the driving of the driving mechanism so as to move relative to the upper fixed disc and the lower fixed disc to grind the element to be ground;
the grinding device is characterized in that an edge guide ring is arranged in the bearing disc hole, the element to be ground is sleeved in the edge guide ring, and the edge guide ring is arranged in the bearing disc hole in a manner of freely moving relative to the bearing disc hole, so that the element to be ground drives the edge guide ring to move when moving in the grinding process; the outer diameter of the edge guide ring is smaller than the inner diameter of the bearing disc hole, so that a first movable gap is formed between the edge guide ring and the bearing disc hole;
the edge guide ring is an annular structure made of a resin material.
2. The abrading device of claim 1,
the difference between the outer diameter of the edge guide ring and the inner diameter of the bearing disc hole is 0.2 mm.
3. The abrading device of claim 1,
the inner diameter of the edge guide ring is larger than the outer diameter of the element to be grinded, so that a second movable gap is formed between the element to be grinded and the edge guide ring.
4. The abrading device of claim 3,
the difference between the inner diameter of the edge guide ring and the outer diameter of the element to be ground is 0.5 mm-1 mm.
5. The abrading device of claim 1,
the thickness of the edge guide ring in the direction perpendicular to the disc surface of the bearing disc is the same as that of the bearing disc.
6. The abrading device of claim 1,
a central gear is arranged in the center of the lower fixed disc, and a gear is arranged on the peripheral surface of the central gear;
an inner gear is arranged on the circumferential edge of the lower fixed disc, and a gear is arranged on the inner circumferential surface of the inner gear;
the bearing disc is meshed between the central gear and the internal gear, and the driving mechanism drives the lower fixed disc, the central gear and the internal gear to rotate so as to drive the bearing disc to rotate around the axis of the bearing disc and revolve around the center of the lower fixed disc.
7. A grinding method for grinding an element to be ground by using the grinding apparatus according to any one of claims 1 to 6, comprising:
loading the element to be ground into a bearing disc hole of a bearing disc, and simultaneously loading the edge guide ring between the element to be ground and the bearing disc;
the bearing disc is driven by a driving mechanism to rotate around the axis of the bearing disc and revolve around the center of the lower fixed disc, so that the bearing disc moves relative to the upper fixed disc and the lower fixed disc to grind the element to be ground.
8. A wafer made by the method of claim 7.
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CN111002216B (en) * | 2019-10-15 | 2021-08-24 | 西安奕斯伟硅片技术有限公司 | Grinding equipment |
CN110744440A (en) * | 2019-10-22 | 2020-02-04 | 西安奕斯伟硅片技术有限公司 | Double-side grinding device and method |
CN110774166A (en) * | 2019-10-29 | 2020-02-11 | 西安奕斯伟硅片技术有限公司 | Double-side grinding device and method |
CN112045524A (en) * | 2020-09-15 | 2020-12-08 | 惠州市宏达五金制品有限公司 | Equipment is got rid of to five metals stamping workpiece burr |
CN113352228B (en) * | 2021-07-16 | 2022-06-24 | 西安奕斯伟硅片技术有限公司 | Wafer grinding device |
CN113732851B (en) * | 2021-11-05 | 2022-02-01 | 四川明泰微电子有限公司 | Device for polishing back of semiconductor wafer |
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