CN110176388A - 电介质元件的制造方法和电介质元件 - Google Patents

电介质元件的制造方法和电介质元件 Download PDF

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Publication number
CN110176388A
CN110176388A CN201910119218.1A CN201910119218A CN110176388A CN 110176388 A CN110176388 A CN 110176388A CN 201910119218 A CN201910119218 A CN 201910119218A CN 110176388 A CN110176388 A CN 110176388A
Authority
CN
China
Prior art keywords
oxide
layer
insulator layer
dielectric
dielectric layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910119218.1A
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English (en)
Chinese (zh)
Inventor
座间秀昭
小林忠正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of CN110176388A publication Critical patent/CN110176388A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
CN201910119218.1A 2018-02-21 2019-02-15 电介质元件的制造方法和电介质元件 Pending CN110176388A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018028925A JP2019145682A (ja) 2018-02-21 2018-02-21 誘電体素子の製造方法、および、誘電体素子
JP2018-028925 2018-02-21

Publications (1)

Publication Number Publication Date
CN110176388A true CN110176388A (zh) 2019-08-27

Family

ID=67689022

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910119218.1A Pending CN110176388A (zh) 2018-02-21 2019-02-15 电介质元件的制造方法和电介质元件

Country Status (2)

Country Link
JP (1) JP2019145682A (ja)
CN (1) CN110176388A (ja)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH104089A (ja) * 1996-06-17 1998-01-06 Sony Corp 低誘電率酸化シリコン系絶縁膜の形成方法およびこれを用いた半導体装置
WO2011010726A1 (ja) * 2009-07-24 2011-01-27 株式会社ユーテック プラズマＣＶＤ装置、ＳｉＯ２膜又はＳｉＯＦ膜及びその成膜方法
US20110309355A1 (en) * 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103681655A (zh) * 2012-08-31 2014-03-26 株式会社半导体能源研究所 半导体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH104089A (ja) * 1996-06-17 1998-01-06 Sony Corp 低誘電率酸化シリコン系絶縁膜の形成方法およびこれを用いた半導体装置
WO2011010726A1 (ja) * 2009-07-24 2011-01-27 株式会社ユーテック プラズマＣＶＤ装置、ＳｉＯ２膜又はＳｉＯＦ膜及びその成膜方法
US20110309355A1 (en) * 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103681655A (zh) * 2012-08-31 2014-03-26 株式会社半导体能源研究所 半导体装置

Also Published As

Publication number Publication date
JP2019145682A (ja) 2019-08-29

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Application publication date: 20190827