CN110172732A - The method for preparing nitride single crystal substrates using transition metal nitride sacrificial layer - Google Patents
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
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Abstract
The invention discloses a kind of methods for preparing nitride single crystal substrates using transition metal nitride sacrificial layer.The β phase transition metal nitride sacrificial layer that the present invention passes through the introducing hexagonal crystallographic texture symmetry between nitride single-crystal thick film and nitride template, matched using transition metal nitride sacrificial layer with the crystal orientation of nitride single-crystal thick film, lattice mismatch is small, can selective etch the characteristics of, the separation that nitride single-crystal thick film and nitride template are realized using method for selective etching, obtains the self-supporting nitride single crystal substrates of large scale, high quality；The present invention is easy to the nucleated directly on transition metal nitride sacrificial layer and grows high quality nitride single-crystal thick film, without introducing additional process assisted nitridation object single-crystal thick films nucleation, simplification of flowsheet；Without complicated laser lift-off technique, nitride template is reusable, reduces stripping technology difficulty and cost, improves yield rate；Equipment is simple, and low energy consumption, easy to operate, is suitble to industrialization production.
Description
Technical field
The present invention relates to the technologies of preparing of nitride single crystal substrates, and in particular to a kind of to utilize transition metal nitride sacrifice
The method that layer prepares nitride single crystal substrates.
Background technique
The nitride semiconductor thin film material forbidden bandwidth of direct band gap is continuously adjusted between 0.7-6.2eV, may be implemented
Efficient N-shaped and p-type doping, chemical stability is good, and Radiation hardness is strong, in photoelectric device and field of electronic devices, such as sun
Energy battery, visible LED, ultraviolet source, high-temperature high-frequency electronic device, power electronic device, extreme environment electronic device etc., tool
There is great application value.With the U.S., Japan for representative developed country early in last century just release one after another nitride material and
The development plan of device, and a series of achievements are achieved in application fields such as 5G communication, quantum light sources.
Thin film epitaxy is the basis of device preparation.Due to the scarcity of nitride homo-substrate, hetero-epitaxy becomes nitridation
The mainstream technology of object thin film epitaxy.Although heteroepitaxy method have many advantages, such as it is low in cost, be widely used, foreign substrate
There are biggish lattice mismatch and thermal mismatchings between nitride film, so that the nitride film of preparation has lower crystal matter
Amount and high dislocation density height (> 109cm-2).Crystal defect in nitride epitaxial film will form non-in the opto-electronic device
Radiation recombination center reduces luminous efficiency, will form leak channel in electronic device, reduces disruptive field intensity and increases reversed leakage
Electricity seriously constrains nitride film in the development of photoelectricity and electronic device applications field.In contrast, the nitridation of homoepitaxy
Object film has the surface topography of atomically flating, lower dislocation density (~105cm-2) and higher crystal quality, it can
Significantly improve the performance of nitride optoelectronic devices and electronic device.Therefore, the research and development of low cost, high quality nitride single crystal substrates
Work is of great significance.
The method for preparing nitride single crystal substrates at present specifically includes that high temperature and high pressure method, ammonia heat method, sodium flux growth metrhod and hydrogen
Compound vapour deposition process (Hydride vapor-phase epitaxy, HVPE) etc..But what first three methods were not only prepared
Nitride single crystal substrates size is limited, and need high-temperature high-pressure apparatus or active molten mass auxiliary, energy consumption and risk compared with
Greatly.HVPE method, can be with growing large-size, high quality nitride due to the advantages that its equipment is simple, the speed of growth is fast, at low cost
Single crystalline substrate is the mainstream technology of preparing of current nitride single crystal substrates.But there are nitride single-crystal thick film and linings for HVPE method
The disadvantages of bottom isolation technics is immature, and single-crystal thick films are easily broken.
Summary of the invention
For the above problems of the prior art, transition metal nitride sacrificial layer is utilized the invention proposes a kind of
The method for preparing nitride single crystal substrates is simplified by the crystal phase selection and thickness regulation to transition metal nitride sacrificial layer
The nitride single-crystal thick film growth of HVPE method preparation and stripping technology, reduce the removing difficulty of nitride single-crystal thick film, to obtain
Obtain inexpensive, high quality self-supporting nitride single crystal substrates.
The method for preparing nitride single crystal substrates using transition metal nitride sacrificial layer of the invention, including following step
It is rapid:
1) select the nitride template with hexagonal crystallographic texture symmetry as with hexagonal crystallographic texture symmetry
Nitride
The epitaxial substrate of single-crystal thick films, and carry out chemical cleaning and make clean surface, nitride template includes foreign substrate
And it is raw
Long monocrystalline nitride film on it, monocrystalline nitride film have hexagonal crystallographic texture symmetry；
2) transition metal nitride is deposited using Film forming method on nitride template, by controlling time-controllable transition
Metal nitrogen
The thickness of compound, and transition is regulated and controled by the ratio that is passed through of control temperature and transition metal atoms and nitrogen-atoms
Metal nitrogen
The crystal orientation and stoichiometric ratio of compound, to be formed on the nitride template with hexagonal crystallographic texture symmetry
With six
The X of the β phase of square crystal structural symmetry2N represents transition metal as transition metal nitride sacrificial layer, X；
3) using hydride gas-phase epitaxy HVPE technology, growing nitride monocrystalline is thick on transition metal nitride sacrificial layer
Film leads to
The thickness of time control nitride single-crystal thick film is overregulated, and nitride single-crystal thickness is reduced by stress control method
Film layer
Stress, to form having for the not crackle with a thickness of 50~1000 μm on transition metal nitride sacrificial layer
Hexagonal crystal
The nitride single-crystal thick film of body structural symmetry；
4) xenon difluoride XeF is used2Dry etching or acid etch technology, selective etch transition metal nitride sacrifice
Layer,
Realize the separation of nitride single-crystal thick film and nitride template；
5) chemical cleaning nitride single-crystal thick film obtains self-supporting nitride single crystal substrates.
In step 1), foreign substrate uses sapphire, silicon or carbonization with tripartite or hexagonal crystallographic texture symmetry
Silicon, thickness is between 300~600 μm；Monocrystalline nitride film is the mono-crystal gallium nitride GaN with hexagonal crystallographic texture symmetry
Film or single-crystal aluminum nitride AlN film, thickness is between 1~5 μm.
In step 2), Film forming method is swashed using molecular beam epitaxy MBE, ion beam sputtering, magnetron sputtering and pulse
One of light deposition PLD.Transition metal uses niobium Nb, tantalum Ta or molybdenum Mo, X2N is niobium nitride Nb2N, tantalum nitride Ta2N and nitrogen
Change molybdenum Mo2One of N or a variety of alloys.With sp2The two-dimensional material of hydridization is different, and transition metal nitride sacrificial layer is sp3
Hybrid structure all has dangling bonds at whole surface, is easy to and is all sp3Hybrid structure nitride single-crystal thick film nucleation at
Key is conducive to the nitride for preparing high-crystal quality without special activation processing or insertion low temperature monocrystalline nitride nucleating layer
Single-crystal thick films.
In face between transition metal nitride sacrificial layer and nitride template, nitride single-crystal thick film lattice mismatch compared with
It is small, with the niobium nitride Nb of β phase2For N and gallium nitride GaN, the niobium nitride Nb of β phase2Lattice constant is 0.3056nm, nitrogen in the face of N
Changing lattice constant in the face of gallium GaN is 0.3189nm, lattice mismatch Δ=(0.3189-0.3056)/[0.5 × (0.3189+
0.3056)]=4.3%.Lesser lattice mismatch between transition metal nitride sacrificial layer and nitride single-crystal thick film, can be subsequent
Nitride single-crystal thick film in introduce the stress of lesser mismatch, inhibit the generation of misfit dislocation in nitride thick film.In addition, mistake
The growth temperature of metal nitride sacrificial layer is crossed between the normal operating temperatures (20-1000 DEG C) of Film forming method, preparation
Film crystal quality is good, and only need to control sedimentation time can control the thickness of transition metal nitride sacrificial layer.Therefore, mistake
The thickness for crossing metal nitride sacrificial layer mainly considers the complexity of selective etch, to realize nitride template and nitride
Single-crystal thick films are sufficiently separated, and protect nitride template and nitride single-crystal thick film surface pattern, therefore pass through the control time
Regulate and control transition metal nitride with a thickness of 50~200nm.
In view of nitride single-crystal thick film, transition metal nitride sacrificial layer are consistent with nitride template symmetry, choosing
Selecting the preparation in the nitride template with hexagonal crystallographic texture symmetry has the nitridation of β phase of hexagonal crystallographic texture symmetry
Niobium Nb2N, tantalum nitride Ta2N, molybdenum nitride Mo2N and its alloy, the temperature range of deposition are 780 DEG C~850 DEG C, when preparation when unit
The ratio of interior niobium Nb, tantalum Ta or the molybdenum Mo atomicity and active nitrogen N atomicity being passed through deviates the temperature between 0.5~1.2
Or ratio section can generate other phase structures without hexagonal crystallographic texture symmetry, destroy transition metal nitride sacrificial layer
Hexagonal crystallographic texture symmetry, reduce the crystal quality of the nitride single-crystal thick film of subsequent epitaxial.
In step 3), there are two different growth conditions, i.e. high-quality growth state and stress for HVPE epitaxial growth
Release conditions.Stress control method uses function control method, and epitaxial growth parameters are changed according to specific function at any time, leads to
It crosses and growth parameter(s) is gradient to stress release growth conditions parameter from high-quality growth state parameter is gradient to high-quality growth again
The process of state parameter realizes the Stress Control in the HVPE growth course of GaN thick film.Growth parameter(s) such as ammonia NH3Flow, chlorine
Change hydrogen HCl flow, growth temperature and pressure etc., guarantees the stability of epitaxial material quality and the uniformity of stress release.
In step 4), nitride template and nitride single-crystal thick film have good chemical stability, and acid corrosion-resistant is resistance to
Xenon difluoride XeF2Etching.Transition metal nitride sacrificial layer easily with xenon difluoride XeF2Or sour mixed liquor is reacted, and is destroyed
Metal nitride sacrificial layer is crossed, so that nitride template and the separation of nitride single-crystal thick film.Using xenon difluoride XeF2Dry method is carved
Erosion technology is previously deposited coat of metal in the upper surface of nitride single-crystal thick film, can protect gallium nitride thick film flat surface
And selective etch transition metal nitride sacrificial layer, realize the separation of nitride single-crystal thick film and nitride template.Metal is protected
The material of sheath is using gold Au, aluminium Al or chromium Cr etc..Using hydrochloric acid HCl, nitric acid HNO3With the acid of the sour mixed liquor of deionized water
Lithographic technique, being capable of selective corrosion transition metal nitride sacrificial layer, realization nitride single-crystal thick film and nitride template
Separation.
In step 5), chemical cleaning successively includes acid cleaning and organic washing, and removing may remaining nitride single-crystal
Transition metal nitride sacrificial layer residual on coat of metal, nitride single-crystal thick film on thick film.Wherein, acid cleaning uses
Hydrochloric acid solution is ultrasonically treated；Organic washing successively uses trichloro ethylene, acetone, alcohol and deionized water ultrasonic treatment.It adopts
With chemical cleaning nitride template, the transition metal nitride sacrificial layer residual in nitride template is removed, repeatable make is obtained
Nitride template.
Advantages of the present invention:
The β phase that the present invention passes through the introducing hexagonal crystallographic texture symmetry between nitride single-crystal thick film and nitride template
Transition metal nitride sacrificial layer is matched using transition metal nitride sacrificial layer with the crystal orientation of nitride single-crystal thick film, lattice
Mismatch is small, can selective etch the characteristics of, nitride single-crystal thick film and nitride template are realized using method for selective etching
Separation, obtain the self-supporting nitride single crystal substrates of large scale, high quality；Compared with two dimensional crystal transition zone, transition metal
Nitride sacrificial layer preparation is simple, process compatible, high reliablity；Nitride single-crystal thick film and transition metal nitride sacrificial layer are same
For sp3Hybrid structure, lattice mismatch is small, by the rational design to transition metal nitride sacrificial layer crystal phase, is easy in transition
Nucleated directly grows high quality nitride single-crystal thick film on metal nitride sacrificial layer, without introducing additional process assisted nitridation object
Single-crystal thick films nucleation, simplification of flowsheet；Compared with conventional nitride sacrificial layer, by sacrificing thickness to transition metal nitride
The rational design of degree, can selective etch transition metal nitride sacrificial layer, without complicated laser lift-off technique, drop
Low stripping technology difficulty and cost improve yield rate；Using high quality nitride single-crystal template, nitride single-crystal template, transition
Small lattice mismatch system is formed between metal nitride sacrificial layer and nitride single-crystal thick film, is able to suppress mismatch stress induced dislocations
Generation, improve nitride single-crystal thick film crystal quality；It is realized by way of destroying transition metal nitride sacrificial layer outer
Prolong substrate to separate with nitride single-crystal thick film, nitride single-crystal thick film and nitride template will not be caused to damage, nitride mould
Plate is reusable；Equipment is simple, and low energy consumption, easy to operate, at low cost, is suitble to industrialization production.
Detailed description of the invention
Fig. 1 to Fig. 5 is followed successively by the side of the invention that nitride single crystal substrates are prepared using transition metal nitride sacrificial layer
The sectional view of the process of method；
Fig. 6 is the process of the method for the invention that nitride single crystal substrates are prepared using transition metal nitride sacrificial layer
Figure.
Specific embodiment
With reference to the accompanying drawing, by specific embodiment, the present invention is further explained.
Embodiment one
In the present embodiment, nitride template includes the face c of c surface sapphire and 3 μ m-thicks, hexagonal crystallographic texture symmetry
Gallium nitride GaN film composition；Transition metal nitride sacrificial layer 3 is β phase niobium nitride Nb2N, preparation method are molecular beam epitaxy
MBE；Semiconductor monocrystal thick film 4 is the gallium nitride GaN thick film of hexagonal crystallographic texture symmetry, and preparation method is outside hydrite vapor phase
Prolong HVPE, stripping means is sour mixed liquor selective etch.
The method for preparing gallium nitride GaN single crystal substrate using transition metal nitride sacrificial layer of the present embodiment, such as Fig. 6 institute
Show, comprising the following steps:
1) selection nitride template carries out trichloro ethylene, acetone, ethyl alcohol and deionized water ultrasonic cleaning, obtains clean nitrogen
Change gallium GaN template surface, as shown in Figure 1, the c surface sapphire that the foreign substrate 1 of nitride template uses with a thickness of 400 μm,
On monocrystalline nitride film 2 using the face c, with hexagonal crystallographic texture symmetry with a thickness of 3 μm of gallium nitride GaN；
2) the nitride template cleaned is put into molecular beam epitaxy MBE chamber, in the upper surface of c surface gallium nitride GaN
Using molecular beam epitaxy MBE, growth rate 5nm/min, growth time 10min, growth temperature is 820 DEG C, when preparation niobium Nb and
The ratio of active nitrogen N atom obtains the Nb of the β phase with hexagonal crystallographic texture symmetry of 50nm thickness 1.02The transition gold of N
Belong to nitride sacrificial layer 3, as shown in Fig. 2, being passed through is nitrogen N in this deposition method2, using radio frequency plasma source
High-temperature activation processing is carried out, N atom is formed, just can apply to the deposition of transition metal nitride sacrificial layer；
3) the nitride template with transition metal nitride sacrificial layer is put into hydride gas-phase epitaxy hvpe reactor room
Middle progress gallium nitride GaN thick film growth, is formed nitride single-crystal thick film 4: needing to be prevented using stress control technique in growth course
The generation of crackle in nitride single-crystal thick film, while guaranteeing high crystal quality and surface quality, the thickness of nitride single-crystal thick film
Degree is 500 μm, as shown in Figure 3；
4) acid etch technology is used, using nitride single-crystal thick film acid corrosion-resistant, transition metal nitride sacrificial layer and acid
The characteristic of mixed liquor reaction, selective etch transition metal nitride sacrificial layer realize nitride single-crystal thick film and nitride mould
The separation of version, as shown in Figure 4；
5) nitride template and nitride single-crystal thick film are subjected to sour cleaning and organic washing, remove transition metal nitride
Sacrificial layer residual, obtains self-supporting nitride single crystal substrates and reusable nitride template, as shown in Figure 5.
In the present embodiment, transition metal nitride sacrificial layer uses niobium nitride Nb2N thin film passes through selective acid etch
Method, realize gallium nitride GaN template and gallium nitride GaN single crystal thick film separation, obtain reusable gallium nitride GaN mould
Plate and self-standing gan GaN single crystal substrate, the crystal quality and yield rate of test discovery self-stripping gallium nitride GaN thick film are significant
It improves.
Embodiment two
In the present embodiment, nitride template is by the face c silicon carbide (6H-SiC) and the face c of 3 μ m-thicks, hexagonal crystallographic texture pair
The aluminium nitride AlN film composition of title property；Transition metal nitride sacrificial layer 3 is β phase tantalum nitride Ta2N, preparation method are splashed for magnetic control
It penetrates；Nitride single-crystal thick film 4 is aluminium nitride AlN thick film, and preparation method is hydride gas-phase epitaxy HVPE, and stripping means is difluoro
Change xenon XeF2Dry etching technology.
The method for preparing gallium nitride AlN single crystalline substrate using transition metal nitride sacrificial layer of the present embodiment, including with
Lower step:
1) selection nitride template carries out trichloro ethylene, acetone, ethyl alcohol and deionized water ultrasonic cleaning, obtains clean nitrogen
Change gallium GaN template surface, as shown in Figure 1, the foreign substrate 1 of nitride template is using the face the c silicon carbide (6H- with a thickness of 300 μm
SiC), monocrystalline nitride film 2 thereon using the face c, with hexagonal crystallographic texture symmetry with a thickness of 2 μm of aluminium nitride
AlN film, as shown in Figure 1；
2) face the c aluminium nitride AlN template cleaned is put into magnetron sputtering chamber, is being nitrogenized using magnetron sputtering technique
The upper surface of object template grows β phase tantalum nitride Ta2N, growth temperature are 800 DEG C, growth rate 5nm/min, growth time
20min, the ratio of nitrogen Ta and active nitrogen N atom obtains the transition metal nitride sacrifice of 100nm thickness between 1.0 when preparation
Layer 2, as shown in Figure 2；
3) the nitride template with transition metal nitride sacrificial layer is put into hydride gas-phase epitaxy hvpe reactor room
Middle progress aluminium nitride AlN thick film growth, is formed aluminium nitride AlN thick film layers 4: needing to be prevented using stress control technique in growth course
The generation of crackle in aluminium nitride AlN single-crystal thick films, while guaranteeing high crystal quality and surface quality, aluminium nitride AlN monocrystalline is thick
Film is used as nitride single-crystal thick film 4 with a thickness of 300 μm, as shown in Figure 3；
4) first deposited metal protective layer on nitride single-crystal thick film 4, utilizes the nitride single-crystal thick film XeF of resistance to xenon difluoride2
Etching, transition metal nitride sacrificial layer and xenon difluoride XeF2The characteristic of reaction, selective etch transition metal nitride are sacrificial
Domestic animal layer 3, realizes the separation of nitride single-crystal thick film and nitride template, as shown in Figure 4；
5) nitride template and nitride single-crystal thick film are subjected to sour cleaning and organic washing, remove transition metal nitride
Sacrificial layer residual and coat of metal residual, obtain self-supporting nitride single crystal substrates and reusable nitride template,
As shown in Figure 5.
In the present embodiment, transition metal nitride sacrificial layer uses tantalum nitride Ta2N thin film passes through selective bifluoride
Xenon XeF2The method of etching realizes the separation of aluminium nitride AlN template and aluminium nitride AlN thick film, obtains reusable nitridation
The self-supporting aluminium nitride AlN single crystalline substrate of aluminium AlN template and high quality, crystal matter of the test discovery from removing aluminium nitride AlN film
Amount and yield rate significantly improve.
It is finally noted that the purpose for publicizing and implementing example is to help to further understand the present invention, but this field
Technical staff be understood that without departing from the spirit and scope of the invention and the appended claims, it is various replacement and repair
It is all possible for changing.Therefore, the present invention should not be limited to embodiment disclosure of that, and the scope of protection of present invention is to weigh
Subject to the range that sharp claim defines.
Claims (8)
1. a kind of method for preparing nitride single crystal substrates using transition metal nitride sacrificial layer, which is characterized in that the side
Method the following steps are included:
1) select the nitride template with hexagonal crystallographic texture symmetry as the nitridation with hexagonal crystallographic texture symmetry
The epitaxial substrate of object single-crystal thick films, and carry out chemical cleaning and make clean surface, nitride template includes foreign substrate and life
Long monocrystalline nitride film on it, monocrystalline nitride film have hexagonal crystallographic texture symmetry；
2) transition metal nitride is deposited using Film forming method on nitride template, by controlling time-controllable transition metal
The thickness of nitride, and transition metal nitrogen is regulated and controled by the ratio that is passed through of control temperature and transition metal atoms and nitrogen-atoms
The crystal orientation and stoichiometric ratio of compound, so that being formed on the nitride template with hexagonal crystallographic texture symmetry has six sides
The X of the β phase of crystal structure symmetry2N represents transition metal as transition metal nitride sacrificial layer, X；
3) hydride gas-phase epitaxy HVPE technology growing nitride single-crystal thick films on transition metal nitride sacrificial layer are utilized, are led to
The thickness of time control nitride single-crystal thick film is overregulated, and answering for nitride single-crystal thick film layers is reduced by stress control method
Power, so that being formed on transition metal nitride sacrificial layer has hexagonal knot with a thickness of 50~1000 μm of not crackle
The nitride single-crystal thick film of structure symmetry；
4) xenon difluoride XeF is used2Dry etching or acid etch technology, selective etch transition metal nitride sacrificial layer are real
The separation of existing nitride single-crystal thick film and nitride template；
5) chemical cleaning nitride single-crystal thick film obtains self-supporting nitride single crystal substrates.
2. the method as described in claim 1, which is characterized in that in step 1), foreign substrate, which uses, has tripartite or six sides
Sapphire, silicon or the silicon carbide of crystal structure symmetry, thickness is between 300~600 μm；Monocrystalline nitride film is with six
The mono-crystal gallium nitride GaN film or single-crystal aluminum nitride AlN film of square crystal structural symmetry, thickness is between 1~5 μm.
3. the method as described in claim 1, which is characterized in that in step 2), Film forming method uses molecular beam epitaxy
One of MBE, ion beam sputtering, magnetron sputtering and pulse laser deposition PLD.
4. the method as described in claim 1, which is characterized in that in step 2), transition metal uses niobium Nb, tantalum Ta or molybdenum
Mo, X2N is niobium nitride Nb2N, tantalum nitride Ta2N and molybdenum nitride Mo2One of N or a variety of alloys.
5. the method as described in claim 1, which is characterized in that in step 2), the temperature range of deposition is 780 DEG C~850
DEG C, the ratio of the transition metal atoms number and nitrogen N atomicity that are passed through in the unit time is between 0.5~1.2.
6. the method as described in claim 1, which is characterized in that in step 3), stress control method uses function controlling party
Method changes epitaxial growth parameters according to specific function at any time, is released by growth parameter(s) in high-quality growth state and stress
It frees and changes between long status, realize the Stress Control in growth course.
7. the method as described in claim 1, which is characterized in that use xenon difluoride XeF in step 4)2Dry etching technology,
Coat of metal is previously deposited in the upper surface of nitride single-crystal thick film.
8. the method as described in claim 1, which is characterized in that in step 5), chemical cleaning successively includes acid cleaning and has
Machine cleaning.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110629284A (en) * | 2019-10-30 | 2019-12-31 | 广东先导稀材股份有限公司 | Growth method of gallium nitride crystal |
| CN110729182A (en) * | 2019-10-08 | 2020-01-24 | 苏州纳维科技有限公司 | Preparation method and growth structure of high-quality self-supporting nitride substrate |
| CN113270358A (en) * | 2021-07-15 | 2021-08-17 | 苏州浪潮智能科技有限公司 | Method for manufacturing GaN chip and GaN chip |
| CN114855280A (en) * | 2022-05-05 | 2022-08-05 | 北京中博芯半导体科技有限公司 | Method for preparing high-quality crack-free aluminum nitride film on silicon and application thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729182A (en) * | 2019-10-08 | 2020-01-24 | 苏州纳维科技有限公司 | Preparation method and growth structure of high-quality self-supporting nitride substrate |
| CN110629284A (en) * | 2019-10-30 | 2019-12-31 | 广东先导稀材股份有限公司 | Growth method of gallium nitride crystal |
| CN110629284B (en) * | 2019-10-30 | 2021-08-17 | 广东先导稀材股份有限公司 | Growth method of gallium nitride crystal |
| CN113270358A (en) * | 2021-07-15 | 2021-08-17 | 苏州浪潮智能科技有限公司 | Method for manufacturing GaN chip and GaN chip |
| CN113270358B (en) * | 2021-07-15 | 2021-09-14 | 苏州浪潮智能科技有限公司 | Method for manufacturing GaN chip and GaN chip |
| WO2023284170A1 (en) * | 2021-07-15 | 2023-01-19 | 苏州浪潮智能科技有限公司 | Method for fabricating gan chip and gan chip |
| US11908689B2 (en) | 2021-07-15 | 2024-02-20 | Inspur Suzhou Intelligent Technology Co., Ltd. | Method for fabricating GaN chip and GaN chip |
| CN114855280A (en) * | 2022-05-05 | 2022-08-05 | 北京中博芯半导体科技有限公司 | Method for preparing high-quality crack-free aluminum nitride film on silicon and application thereof |
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