CN110172673A - Substrate and evaporated device is deposited - Google Patents
Substrate and evaporated device is deposited Download PDFInfo
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- CN110172673A CN110172673A CN201910596433.0A CN201910596433A CN110172673A CN 110172673 A CN110172673 A CN 110172673A CN 201910596433 A CN201910596433 A CN 201910596433A CN 110172673 A CN110172673 A CN 110172673A
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- vapor deposition
- deposition substrate
- conductive pattern
- substrate
- conductive
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
This application discloses a kind of vapor deposition substrate and evaporated devices.The vapor deposition substrate includes the conductive pattern positioned at substrate body side, which can connect with current source, and can generate magnetic field under the action of the electric current of current source offer.Since the magnetic field that the magnetic field can be generated with the magnetic mechanism in evaporated device interacts, so that magnetic mechanism generates the magnetic force of a certain size and direction to the vapor deposition substrate, therefore it can achieve absorption or repel the effect of vapor deposition substrate, improve the degree of sag of vapor deposition substrate intermediate region, so that the region of open area and material layer to be formed on vapor deposition substrate on mask plate can be with accurate contraposition, and then ensure evaporation effect.
Description
Technical field
The present invention relates to field of display technology, in particular to a kind of vapor deposition substrate and evaporated device.
Background technique
Evaporation process is a kind of technique for forming material requested layer on vapor deposition substrate in such a way that mask plate is by vapor deposition.
Currently, mask plate can be attached to vapor deposition substrate close to the side of evaporation source when being deposited.Evaporation source can
By the open area on mask plate, evaporation material to be deposited in being deposited on substrate, thus needed for being formed on vapor deposition substrate
Material layer.
But during vapor deposition, vapor deposition substrate is influenced by self gravity, it may occur that it is sagging, cause on mask plate
Open area can not be with the region accurate contraposition of material layer to be formed on vapor deposition substrate.
Summary of the invention
The embodiment of the invention provides a kind of vapor deposition substrate and evaporated devices, can solve on mask plate in the related technology
The problem of open area can not be with the region accurate contraposition of material layer to be formed on vapor deposition substrate, the technical solution is as follows:
On the one hand, a kind of vapor deposition substrate is provided, the vapor deposition substrate includes: substrate body, and is located at the substrate
One or more conductive patterns of ontology side；
Each conductive pattern is used to connect to form current loop with a current source, and in the current source
Magnetic field is generated under the action of the electric current of offer.
Optionally, the vapor deposition substrate includes: multiple conductive patterns, and multiple conductive patterns are evenly spaced in institute
It states in substrate body.
Optionally, the substrate body includes: one or more display panels, and each conductive pattern is in the substrate
Orthographic projection on ontology is not Chong Die with the display panel.
Optionally, the quantity for the conductive pattern that the vapor deposition substrate includes is identical as the quantity of the display panel；
Each conductive pattern is looped around around the display panel.
Optionally, the gate metal layer in the conductive pattern and the display panel is located at same layer, and uses identical material
Material is made.
Optionally, the active layer in the conductive pattern and the display panel is located at same layer；
The material that the active layer is made includes amorphous silicon material；
The material that the conductive pattern is made includes amorphous silicon material, and the metal being entrained in the amorphous silicon material
Material.
Optionally, the display panel includes: underlay substrate, and the multilayer material film positioned at the underlay substrate side
Layer；
The conductive pattern is located in the underlay substrate and the multilayer material film layer close to the underlay substrate side
Film layer between, be made the conductive pattern material be metal material.
Optionally, each conductive pattern is conductive coil, the vapor deposition substrate further include: one or more electrodes
Group, each electrode group include two sub-electrodes；
The both ends of each conductive coil are connect with two sub-electrodes in an electrode group respectively, described two
Sub-electrode with the current source for connecting.
Optionally, the vapor deposition substrate includes multiple conductive coils, and a pair of with multiple conductive coils one
The multiple electrode groups answered；
The both ends of each conductive coil are connected with two sub-electrodes in a corresponding electrode group respectively.
On the other hand, a kind of evaporated device is provided, the evaporated device includes: current source, and such as institute in terms of above-mentioned
The vapor deposition substrate stated；
The current source connect to form current loop with each conductive pattern that the vapor deposition substrate includes.
Optionally, the evaporated device further include: evaporation source, mask plate and magnetic mechanism；
The mask plate, the vapor deposition substrate and the magnetic mechanism are set gradually along the exit direction of the evaporation source.
Technical solution bring beneficial effect provided by the invention at least may include:
In conclusion the embodiment of the invention provides a kind of vapor deposition substrate and evaporated devices.The vapor deposition substrate includes being located at
The conductive pattern of substrate body side, the conductive pattern can be connect with current source, and can be in the electric current that current source provides
Effect is lower to generate magnetic field.Since the magnetic field that the magnetic field can be generated with the magnetic mechanism in evaporated device interacts, make
It obtains magnetic mechanism and the magnetic force of a certain size and direction is generated to the vapor deposition substrate, therefore can achieve absorption or repel vapor deposition base
The effect of plate improves the degree of sag of vapor deposition substrate intermediate region so that on open area on mask plate and vapor deposition substrate to
The region of forming material layer can be with accurate contraposition, and then ensures evaporation effect.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of evaporated device provided in an embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram that substrate is deposited provided in an embodiment of the present invention；
Fig. 3 is the schematic diagram of a kind of electric current and magnetic field dependence provided in an embodiment of the present invention；
Fig. 4 is the structural schematic diagram of another evaporated device provided in an embodiment of the present invention；
Fig. 5 is the structural schematic diagram of another vapor deposition substrate provided in an embodiment of the present invention；
Fig. 6 is the structural schematic diagram of another evaporated device provided in an embodiment of the present invention；
Fig. 7 is the structural schematic diagram of another evaporated device provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is a kind of structural schematic diagram of evaporated device provided in an embodiment of the present invention.As shown in Figure 1, the evaporated device
It may include: vapor deposition chamber (equipment chamber, EQP chamber) 100, and the steaming in vapor deposition chamber 100
Plating source (source) 200, mask plate (mask) 300 and magnetic mechanism (magnet) 400.The mask plate 300 and magnetic mechanism 400
It can be set gradually along the exit direction Z1 far from evaporation source 200, and the magnetic mechanism 400 can be fixed on vapor deposition chamber 100
Top D1.Optionally, which can be high-precision metal mask plate (fine metal mask, FFM).
Wherein, dependent interaction occurs for the magnetic field that the magnetic field that magnetic texure 400 generates can be generated with mask plate 300 itself,
Magnetic mechanism 400 can generate the magnetic force of a certain size and direction to the mask plate 300, reach absorption or repel mask plate
300 effect.It avoids during vapor deposition, mask plate 300 is influenced sagging by self gravity, and leads to open area thereon
With the region of material layer to be formed on vapor deposition substrate 01 can not accurate contraposition the problem of.
With reference to Fig. 1, when being deposited, the vapor deposition substrate 01 of evaporation material to be formed can be placed in mask plate 300
Between magnetic mechanism 400, and mask plate 300 and vapor deposition substrate 01 are attached.Evaporation source 200 can be incited somebody to action along exit direction Z1
Material is evaporated, is deposited by the open area on mask plate 300 on the vapor deposition substrate 01.But vapor deposition substrate 01 is by itself weight
The factors such as power or expanded by heating, it is possible that sagging as shown in Figure 1, at this time, it is possible to will lead to mask plate 300
On open area and vapor deposition substrate 01 on material layer to be formed region can not accurate contraposition, there is colour mixture bad phenomenon.
The embodiment of the invention provides a kind of vapor deposition substrate, it can solve the problem for aligning inaccuracy in the related technology, change
It has been apt to colour mixture bad phenomenon caused by evaporation process, has ensure that evaporation effect.
Fig. 2 is a kind of structural schematic diagram that substrate is deposited provided in an embodiment of the present invention.As shown in Fig. 2, the vapor deposition substrate
01 may include: substrate body 10, and one or more conductive patterns 20 positioned at 10 side of substrate body, for example, Fig. 1 shows
Multiple conductive patterns 20 positioned at 10 side of substrate body are gone out.
Wherein, each conductive pattern 20 can be used for connecting to form current loop with a current source (not shown in figure 1),
And for generating magnetic field under the action of the electric current that current source provides.
It, can be defeated to conductive pattern by current source according to the degree of sag of vapor deposition substrate 01 during being deposited
Enter a certain size electric current.According to Ampere's right-handed screw rule it is found that with reference to Fig. 3, which can be in the effect of electric current I
Under, the magnetic field of certain orientation is generated, such as the magnetic field N in Fig. 3.What the magnetic field can be generated with magnetic mechanism 400 in evaporated device
Magnetic field interacts, so that magnetic mechanism 400 generates the magnetic force of a certain size and direction to the vapor deposition substrate 01, reaches
To absorption or the effect of repulsion vapor deposition substrate 01, improve the degree of sag of vapor deposition 01 intermediate region of substrate.Thus, it is possible to make
01 mask plate 300 of substrate is deposited normally to attach, that is to say so that on the open area on mask plate 300 and vapor deposition substrate 01 to
It the region of forming material layer can be with accurate contraposition.
In conclusion the vapor deposition substrate includes being located at substrate body one the embodiment of the invention provides a kind of vapor deposition substrate
The conductive pattern of side, the conductive pattern can be connect with current source, and can be generated under the action of the electric current of current source offer
Magnetic field.Since the magnetic field that the magnetic field can be generated with the magnetic mechanism in evaporated device interacts, so that magnetic mechanism
The magnetic force of a certain size and direction is generated to the vapor deposition substrate, therefore can achieve absorption or repel the effect of vapor deposition substrate,
Improve the degree of sag of vapor deposition substrate intermediate region, so that material layer to be formed on the open area and vapor deposition substrate on mask plate
Region can be with accurate contraposition, and then ensure evaporation effect.
Optionally, with reference to Fig. 4, the magnetic field that the conductive pattern 20 that substrate 01 includes generates is deposited, is generated with magnetic mechanism 400
Magnetic field can interact and generate magnetic force F1, magnetic force F1 can play suction-operated to vapor deposition substrate 01, that is, refer to Fig. 4,
Magnetic force F1 can be adsorption capacity.The adsorption capacity can improve the degree of sag of the intermediate region of vapor deposition substrate 01.Optionally, it leads
The magnetic field interaction that the magnetic field that electrograph shape 20 generates can also be generated with magnetic mechanism 400 generates repulsive force, which can
To improve the tilting degree of the fringe region of vapor deposition substrate 01.
For example, with reference to Fig. 5, vapor deposition substrate 01 provided in an embodiment of the present invention can under the action of magnetic force F1 with exposure mask
Version 300 attaches completely, correspondingly, the open area on mask plate 300 and the region of material layer to be formed on vapor deposition substrate 01 are
Can with accurate contraposition, improve vapor deposition during because be deposited substrate 01 it is sagging due to caused by colour mixture bad phenomenon.
It should be noted that the magnetic field that the magnetic mechanism 400 generates can also be generated with mask plate 300 itself with reference to Fig. 4
Magnetic field interact, generate magnetic force F2, magnetic force F2 can play absorption or repulsive interaction to mask plate 300, change
Be apt to the sagging of the appearance of mask plate 300, further ensure on open area on mask plate 300 and vapor deposition substrate 01 to
The accurate contraposition in the region of forming material layer.D1 shown in Fig. 4 and Fig. 5 is the top for referring to vapor deposition chamber 100.
It should be noted that in embodiments of the present invention, which can also connect with detection device.It is being deposited
Before technique, first vapor deposition substrate can be tested using the detection device.In the test process, detection device can be examined
The degree of sag and colour mixture undesirable level of vapor deposition substrate 01 are surveyed, and can be according to the bad journey of degree of sag and colour mixture detected
Degree, it is determined that being input to the size of the electric current of conductive pattern, and forms degree of sag, colour mixture undesirable level and size of current
Corresponding relationship, for example, corresponding relationship curve can be formed.Correspondingly, the detection can be made to set when being actually deposited
Standby to connect with current source, detection device can detecte the degree of sag and colour mixture undesirable level of vapor deposition substrate 01, and can basis
Obtained corresponding relationship, the size for the electric current that control current source is inputted to conductive pattern are tested in advance.
Optionally, in embodiments of the present invention, which may include: multiple conductive patterns 20, and multiple
Conductive pattern 20 can be evenly spaced in substrate body 10.
Exemplary, with reference to Fig. 2, the vapor deposition substrate 01 shown includes 16 conductive patterns 20, and 16 conductive patterns altogether
Shape 20 can be evenly spaced in the substrate body 10 in a manner of 4 × 4 array arrangement.
By being evenly spaced in multiple conductive patterns 20 in substrate body 10, can make to each conductive pattern
When the electric current of 20 input same sizes, the magnetic force that 300 pairs of vapor deposition substrates 01 of magnetic mechanism generate everywhere is all the same.It ensure that steaming
The absorption everywhere of plated substrate 01 repels that effect is all the same, that is, ensure that the open area on mask plate 300 and vapor deposition substrate 01
The region of material layer to be formed can accurate contraposition everywhere.
Fig. 6 is the structural schematic diagram of another vapor deposition substrate provided in an embodiment of the present invention.As shown in fig. 6, the substrate sheet
Body 10 may include: one or more display panels (panel) 101, positive throwing of each conductive pattern 20 in substrate body 10
Shadow can be not Chong Die with display panel 101.For example, the substrate body 10 shown includes 16 display panels altogether with reference to Fig. 6
101。
It, can be to avoid in formation conductive pattern by making the orthographic projection of conductive pattern 20 not Chong Die with display panel 101
When 20, the film layer for including to display panel 101 is impacted.I.e. under the premise of guaranteeing accurate contraposition, display ensure that
The yield of panel 101.
Optionally, in embodiments of the present invention, the quantity for the conductive pattern 20 which includes, with substrate body
The quantity of 10 display panels 101 for including can be identical, and each conductive pattern 20 can be looped around a display panel 101
Around.
Exemplary, with reference to Fig. 6, the vapor deposition substrate 01 shown includes 16 conductive patterns 20.And 16 conductive patterns
20 and 16 display panels 101 correspond, and each conductive pattern 20 is looped around a corresponding display panel 101 weeks
It encloses.
Due to during vapor deposition, being that the display panel for including is deposited by material is evaporated by evaporation source in substrate body 10
In 101, so that conductive pattern 20 is looped around around display panel 101, it is ensured that magnetic mechanism 400 is to display panel
The substrate body 10 of 101 regions generates the magnetic force of a certain size and direction, and then can guarantee display panel 101 and cover
300 reliable attachment of film version improves evaporation effect.
Also, since degree of sag may be different at the position of different display panels for substrate body, by setting
Conductive pattern identical with display panel quantity is set, and each conductive pattern is made to be looped around a corresponding display panel week
It encloses, can realize when the electric current inputted to each conductive pattern is individually controlled to the substrate sheet at each display panel
The independent control for the magnetic force that body generates, it is higher to the magnetic force size control flexibility at substrate body different location, preferably change
The sagging effect being apt at different location.
Optionally, the quantity of conductive pattern 20 can also be different from the quantity of display panel 101, that is to say, a conduction
Figure 20 can be looped around around multiple display panels 101.
As a kind of optional implementation, the gate metal layer (gate) in conductive pattern 20 and display panel 101 can
It to be located at same layer, and can be made of identical material, for example, conductive pattern 20 and gate metal layer can be all made of metal material
Material is made.
For example, the conductive pattern 20 can be formed with the gate metal layer in display panel 101 by a patterning processes.
Gate metal layer and conductive pattern 20 are formed by a patterning processes, can simplify manufacture craft, and cost can be saved.
As another optional implementation, the active layer in conductive pattern 20 and display panel 101 can be located at same
Layer.Wherein, the material that the active layer is made may include amorphous silicon (P-si) material.The material that the conductive pattern 20 is made includes
Amorphous silicon material, and metal material of the doping (Doping) in amorphous silicon material.Since P-si electric conductivity is poor,
By in P-si material doping metals material conductive pattern is made, can simplify manufacture craft save cost under the premise of,
Guarantee the conductive effect of conductive pattern 20, and then guarantees that conductive pattern 20 generates the reliability in magnetic field.
As another optional implementation, display panel 101 may include underlay substrate, and be located at underlay substrate
The multilayer material film layer of side.
Wherein, conductive pattern 20 can be located at the material in underlay substrate and multilayer material film layer close to underlay substrate side
Between film layer, and the material that conductive pattern 20 is made can be metal material.
For example, first metal material can be used in the side shape of the underlay substrate before not formed multilayer material film layer
At one layer of metal layer, multiple conductive patterns are then obtained by etching processing.Finally, again in the metal layer far from underlay substrate
Side forms the multilayer material film layer stacked gradually.
It should be noted that substrate body 10 provided in an embodiment of the present invention can be for using flexibility made of flexible material
Substrate body, or, or using rigid substrates ontology made of rigid material.For flexible base board ontology, conductive pattern
Shape 20 can be located at same layer with gate metal layer or active layer.For rigid substrates ontology, conductive pattern 20 can be located at substrate
In substrate and multilayer material film layer between the film layer of underlay substrate side.
Fig. 7 is the structural schematic diagram of another vapor deposition substrate provided in an embodiment of the present invention.As shown in fig. 7, each conduction
Figure 20 can be conductive coil, and the vapor deposition substrate 01 can also include: one or more electrode groups 102, each electrode
Group 102 may include two sub-electrodes 1021.
For example, the vapor deposition substrate 01 shown includes 16 electrode groups 102 altogether with reference to Fig. 7.Wherein, each sub-electrode
1021 are referred to as electrode block (pad).
Wherein, the both ends of each conductive coil can be connect with two sub-electrodes 1021 in an electrode group 102 respectively,
And two sub-electrodes 1021 can be used for connecting with current source.
Since two rear line head of conductive coil is thinner, if directly connecting at the both ends of conductive coil with current source, possibly can not
Guarantee current source to the reliable input current of conductive coil.Therefore by setting include the electrode group of two sub-electrodes, and to lead
The both ends of electric coil are connect by two sub-electrodes with current source, it is ensured that the accurately and securely introducing of electric current, and then can be with
Guarantee that conductive pattern generates the reliability in magnetic field.
It should be noted that the reliable input in order to guarantee electric current, with reference to Fig. 7, the both ends of each conductive coil can lead to
Metal routing L1 is crossed to connect with two sub-electrodes 1021 (be referred to as bridging) respectively.Metal routing L1 can be with display surface
Any metal material layer in plate is located at same layer, correspondingly, can pass through one with any metal material layer in display panel
Secondary patterning processes are formed.Alternatively, metal routing L1 can also be independently formed using metal material, the embodiment of the present invention to this not
It limits.
It should also be noted that, due to electrode group 102 generally with the source metal or drain metal in display panel 101
Layer is located at same layer, therefore when conductive pattern 20 is formed in the material in underlay substrate and multilayer material film layer close to underlay substrate side
When expecting between film layer, the insulating layer that conductive pattern 20 may be shown in panel with electrode group 102 is separated.At this point, in order to protect
Card electric current is reliably input to conductive pattern 20 by the sub-electrode 1021 in electrode group 102, can be formed using via hole mask plate
Via hole, so that conductive pattern 20 and electrode group 102 are reliably connected by the via hole.
Optionally, in embodiments of the present invention, which may include multiple conductive coils, and lead with multiple
The one-to-one multiple electrodes group 102 of electric coil.Also, the both ends of each conductive coil can respectively with a corresponding electrode
Two sub-electrodes 1021 connection in group 102.
Exemplary, with reference to Fig. 7, the vapor deposition substrate 01 that shows includes 16 conductive coils, and with 16 conductor wires
Enclose one-to-one 16 electrode groups 102.And the both ends of each conductive coil can respectively with a corresponding electrode group 102
In two sub-electrodes 1021 connection.
By connecting each conductive coil with the sub-electrode 1021 in Different electrodes group 102, may be implemented to input
The extremely independent control of the electric current of each conductive coil, and then can be thus achieved at the display panel circular to each conductive coil
The independent control of the magnetic force of generation, control flexibility are higher.Optionally, different conductive coils can also be with the same electrode group
Two sub-electrodes 1021 connection in 102.
It should be noted that in order to avoid when by sub-electrode to conductive pattern input current, in display panel
Other devices cause to interfere, as shown in fig. 7, each electrode group 102 can be arranged at the marginal position of substrate body 10.
In embodiments of the present invention, the coil turn of each conductive coil can be different, and the coil turn can basis
Arrangement space determines.Since the coil turn of conductive coil is directly proportional to the magnetic field that it is generated, i.e., make in the electric current of same size
Under, coil turn is more, and the magnetic field strength that conductive coil generates is bigger.And as caused by the vapor deposition substrate of different area
Degree of sag may be different, therefore can be according to the size and degree of sag flexible setting coil turn of vapor deposition substrate 01
Number.
It is for example, with reference to Fig. 4, larger compared with both sides degree of sag among the vapor deposition substrate 01 that shows, therefore can make
The coil turn for the conductive coil that meta position installs, greater than the coil turn of the conductive coil of both sides setting.And then it can make
It obtains when inputting the electric current of same size, the magnetic field that the conductive coil of middle position generates is greater than the conductor wire at the position of both sides
The magnetic field generated is enclosed, correspondingly, the magnetic force that middle position generates can be greater than the magnetic force generated at the position of both sides, ensure that
Adsorption effect.
It should be noted that substrate body 10 provided in an embodiment of the present invention can be glass substrate (Glass).
In conclusion the vapor deposition substrate includes being located at substrate body one the embodiment of the invention provides a kind of vapor deposition substrate
The conductive pattern of side, the conductive pattern can be connect with current source, and can be generated under the action of the electric current of current source offer
Magnetic field.Since the magnetic field that the magnetic field can be generated with the magnetic mechanism in evaporated device interacts, so that magnetic mechanism
The magnetic force of a certain size and direction is generated to the vapor deposition substrate, therefore can achieve absorption or repel the effect of vapor deposition substrate,
Improve the degree of sag of vapor deposition substrate intermediate region, so that material layer to be formed on the open area and vapor deposition substrate on mask plate
Region can be with accurate contraposition, and then ensure evaporation effect.
The embodiment of the invention provides a kind of evaporated device, which may include: current source, and such as Fig. 2, figure
4 to vapor deposition substrate 01 shown in Fig. 7.Wherein, current source can connect formation with each conductive pattern 20 that vapor deposition substrate includes
Current loop.
Optionally, with reference to Fig. 1, which can also include: evaporation source 200, mask plate 300 and magnetic mechanism 400,
And the vapor deposition substrate 01, mask plate 300 and magnetic mechanism 400 can be set gradually along the exit direction Z1 of evaporation source 200.
With reference to Fig. 1, which can also include: vapor deposition chamber 100, the evaporation source 200, mask plate 300, vapor deposition base
Plate 01 and magnetic mechanism 400 can be respectively positioned in vapor deposition chamber 100.
The foregoing is merely alternative embodiments of the invention, are not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (11)
1. a kind of vapor deposition substrate, which is characterized in that the vapor deposition substrate includes: substrate body, and is located at the substrate body
One or more conductive patterns of side；
Each conductive pattern is used to connect to form current loop with a current source, and for providing in the current source
Electric current under the action of generate magnetic field.
2. vapor deposition substrate according to claim 1, which is characterized in that the vapor deposition substrate includes: multiple conductive patterns
Shape, multiple conductive patterns are evenly spaced in the substrate body.
3. vapor deposition substrate according to claim 1, which is characterized in that the substrate body includes: one or more displays
Panel, orthographic projection of each conductive pattern in the substrate body be not Chong Die with the display panel.
4. vapor deposition substrate according to claim 3, which is characterized in that the conductive pattern that the vapor deposition substrate includes
Quantity is identical as the quantity of the display panel；
Each conductive pattern is looped around around the display panel.
5. vapor deposition substrate according to claim 3, which is characterized in that the grid in the conductive pattern and the display panel
Pole metal layer is located at same layer, and is made of identical material.
6. vapor deposition substrate according to claim 3, which is characterized in that the conductive pattern and having in the display panel
Active layer is located at same layer；
The material that the active layer is made includes amorphous silicon material；
The material that the conductive pattern is made includes amorphous silicon material, and the metal material being entrained in the amorphous silicon material
Material.
7. vapor deposition substrate according to claim 3, which is characterized in that the display panel includes: underlay substrate, Yi Jiwei
Multilayer material film layer in the underlay substrate side；
The conductive pattern is located at the material in the underlay substrate and the multilayer material film layer close to the underlay substrate side
Expect that the material that the conductive pattern is made between film layer is metal material.
8. vapor deposition substrate according to any one of claims 1 to 7, which is characterized in that each conductive pattern is conductor wire
Circle, the vapor deposition substrate further include: one or more electrode groups, each electrode group include two sub-electrodes；
The both ends of each conductive coil are connect with two sub-electrodes in an electrode group respectively, described two son electricity
Pole with the current source for connecting.
9. vapor deposition substrate according to claim 8, which is characterized in that the vapor deposition substrate includes multiple conductor wires
Circle, and with the one-to-one multiple electrode groups of multiple conductive coils；
The both ends of each conductive coil are connected with two sub-electrodes in a corresponding electrode group respectively.
10. a kind of evaporated device, which is characterized in that the evaporated device includes: current source, and as claim 1 to 9 is any
The vapor deposition substrate；
The current source connect to form current loop with each conductive pattern that the vapor deposition substrate includes.
11. evaporated device according to claim 10, which is characterized in that the evaporated device further include: evaporation source, mask plate
And magnetic mechanism；
The mask plate, the vapor deposition substrate and the magnetic mechanism are set gradually along the exit direction of the evaporation source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910596433.0A CN110172673B (en) | 2019-07-03 | 2019-07-03 | Evaporation substrate and evaporation equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910596433.0A CN110172673B (en) | 2019-07-03 | 2019-07-03 | Evaporation substrate and evaporation equipment |
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| CN110172673A true CN110172673A (en) | 2019-08-27 |
| CN110172673B CN110172673B (en) | 2021-01-26 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172497A (en) * | 2020-02-18 | 2020-05-19 | 京东方科技集团股份有限公司 | Mask plate, preparation method thereof and evaporation method |
| CN111399708A (en) * | 2020-04-07 | 2020-07-10 | 惠州易晖光电材料股份有限公司 | Electrode wiring structure of touch functional sheet and preparation method thereof |
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| CN111399708A (en) * | 2020-04-07 | 2020-07-10 | 惠州易晖光电材料股份有限公司 | Electrode wiring structure of touch functional sheet and preparation method thereof |
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