CN110168741A - 具有光电转换功能的电子设备 - Google Patents
具有光电转换功能的电子设备 Download PDFInfo
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- CN110168741A CN110168741A CN201780081914.7A CN201780081914A CN110168741A CN 110168741 A CN110168741 A CN 110168741A CN 201780081914 A CN201780081914 A CN 201780081914A CN 110168741 A CN110168741 A CN 110168741A
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- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 1
- 229910018572 CuAlO2 Inorganic materials 0.000 description 1
- 229910016510 CuCrO2 Inorganic materials 0.000 description 1
- 229910002531 CuTe Inorganic materials 0.000 description 1
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- 229910015675 MoO3−x Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- YQWBYOQCBOEBND-UHFFFAOYSA-N O(Br)Br.[Cd] Chemical compound O(Br)Br.[Cd] YQWBYOQCBOEBND-UHFFFAOYSA-N 0.000 description 1
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- FBSDHLAJPFIMHJ-UHFFFAOYSA-N [Cd].O(Cl)Cl Chemical compound [Cd].O(Cl)Cl FBSDHLAJPFIMHJ-UHFFFAOYSA-N 0.000 description 1
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- 150000001450 anions Chemical class 0.000 description 1
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- YQEMORVAKMFKLG-UHFFFAOYSA-N glycerine monostearate Natural products CCCCCCCCCCCCCCCCCC(=O)OC(CO)CO YQEMORVAKMFKLG-UHFFFAOYSA-N 0.000 description 1
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- 238000011835 investigation Methods 0.000 description 1
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- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
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- UUIQMZJEGPQKFD-UHFFFAOYSA-N n-butyric acid methyl ester Natural products CCCC(=O)OC UUIQMZJEGPQKFD-UHFFFAOYSA-N 0.000 description 1
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
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- 238000010248 power generation Methods 0.000 description 1
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- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
- H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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Abstract
本发明提供一种能够将红外光和紫外光转换为电能并且透明性高的电子设备。一种具有含有透明性等离激元材料的层的电子设备。
Description
技术领域
本发明涉及一种具有光电转换功能的电子设备。
背景技术
目前,从设计性等和发电的效率化的观点考虑,已尝试制造透明的太阳能电池。
作为这种透明的太阳能电池,报告有有机薄膜太阳能电池(非专利文献1、2),但着色显著,在透明性方面留有课题。另外,有机薄膜电池将有机物用作光吸收材料,因而在光稳定性方面也存在问题。
为了避免如上所述的着色,还提出了使用光子集中器的方法,但是难说有效地除去了着色。
然而,红外线占据太阳光光谱的约44%,为了有效利用红外线,研究了各种用于将红外光进行能量转换的方法,但是目前尚未确立有效的方法。
另外,汽车和/或火车等密闭空间的热上升的原因在于红外线的照射,如果能够有效阻断红外线,还能够节约用于制冷的能量。另一方面,在近红外区域具有吸收的材料的大多数表示因可见区域的吸收引起的强烈的颜色,因此,除去一部分有机分子和有机盐等例外情况,能够兼顾透明性和红外区域的吸收的材料很少。然而,如果能够提供具有高透明性的同时能够吸收红外区域的光、且能够将该红外光转换为电能的电子设备,则从设计性和经济性的观点考虑,认为是极其有益的。
另一方面,作为红外线以外的不可见光线可以列举紫外线,紫外线对人体引起不良影响。如果能够吸收试图入射到人的居住空间等的紫外线并将其转换为电能,则从健康方面考虑也认为是有益的。
因此,期待着透明性高且能够将红外光和紫外光转换为电能的电子设备。
现有技术文献
非专利文献
非专利文献1:R.R.Lunt and V.Bulovic,Appl.Phys.Lett.,2011,98,113305.
非专利文献2:P.S.Weiss and Y.Yang et al.,ACS Nano,2012,6,7185-7190.
发明内容
发明要解决的技术问题
鉴于如上所述的情况,本发明的目的在于,提供一种能够将红外光和/或紫外光转换为电能并且透明性高的电子设备。
用于解决技术问题的技术方案
本发明的发明人为了实现上述目的,反复进行深入研究,结果发现,通过设置由透明性等离激元材料构成的透明性等离激元材料层,能够提供透明性高且能够将红外光和/或紫外光转换为电能的电子设备,以至于完成了本发明。
换言之,本发明涉及以下内容:
〔1〕一种电子设备,其具有含有透明性等离激元材料的层。
〔2〕如上述〔1〕所述的设备,其中,上述透明性等离激元材料在波长550nm时的透射率为60%以上。
〔3〕如上述〔1〕或〔2〕所述的电子设备,其中,上述透明性等离激元材料为透明性等离激元纳米颗粒。
〔4〕如上述〔3〕所述的电子设备,其中,上述透明性等离激元纳米颗粒为包括选自在红外区域具有LSPR吸收的透明导电性氧化物、硫化铜、磷化铜、碲化铜、硒化铜、氧化钌、氧化铼、氧化钼、氧化钨、钨青铜和铜铁矿(Delafossite)型铜氧化物中的至少一种的纳米颗粒。
〔5〕如上述〔3〕所述的电子设备,其中,上述透明性等离激元纳米颗粒为掺锡氧化铟纳米颗粒。
〔6〕如上述〔3〕~〔5〕中任一项所述的电子设备,其中,上述透明性等离激元纳米颗粒的平均粒径为2~1000nm。
〔7〕如上述〔1〕~〔6〕中任一项所述的电子设备,其还具有电极。
〔8〕如上述〔1〕~〔7〕中任一项所述的电子设备,其还具有载流子输送层。
〔9〕如上述〔1〕~〔8〕中任一项所述的电子设备,其为光电转换设备。
〔10〕一种获得电力的方法,其中,使透明性等离激元材料吸收选自红外光、紫外光和波长440nm以下的可见光中的一种以上来获得电力。
〔11〕如上述〔10〕所述的方法,其中,上述透明性等离激元材料为透明性等离激元纳米颗粒。
〔12〕如上述〔11〕所述的方法,其中,上述透明性等离激元纳米颗粒为在红外区域具有LSPR吸收的透明导电性氧化物。
发明效果
依据以上构成的本发明的电子设备,能够提供能够将红外光和/或紫外光转换为电能并且透明性高的电子设备。
附图说明
图1是关于实施例1的光电流测定方法的说明图。
图2是实施例1的透射带通滤波器时的光电流测定结果。
图3是实施例1的透射光谱结果。
图4是关于实施例2的光电流测定方法的说明图。
图5是实施例2的无滤波器时的光电流测定结果。
图6是实施例2的透射长通滤波器时的光电流测定结果。
具体实施方式
本发明的电子设备的特征在于,具有含有透明性等离激元材料的层。
作为电子设备,例如可以列举光传导设备、光电二极管、光隔离器、光集成电路、光敏晶体管、光电池、光电管、光电倍增管、发光二极管、半导体激光器、光检测器、光化学传感器、太阳能电池、光催化剂等光电转换设备等。除此以外,还可以列举如电视、音响设备、可穿戴设备、信息设备等的、利用通过光电效应获得的电能发挥各种功能的装置。
透明性等离激元材料为具有透明性的等离激元材料,作为本说明书的透明性的定义,只要能够从视觉上认为是透明的即可,没有特别限定。具体而言,优选波长550nm时的透射率为60%以上,更优选为80%以上。波长550nm时的透射率的上限没有特别限定,通常优选为100%,更优选为99%,进一步优选为95%。
等离激元材料为能够引起局域表面等离子共振(Localized Surface PlasmonResonance,以下简称为LSPR)的材料。作为这种透明性等离激元材料,只要是如上所述具有透明性、并且能够发生LSPR的材料即可,没有特别限定,可以广泛采用满足上述条件的公知材料。其中,关于LSPR的发生,通过使周围的折射率变化时明确吸收峰波长变化上具有直线性的方法,得以确认。
通过具有含有这种透明性等离激元材料的层,使该含有透明性等离激元材料的层吸收红外光等视觉辨认性低的长波长的光,并通过光电转换能够获得电力。同样,使该含有透明性等离激元材料的层吸收视觉辨认性低的短波长的光,能够获得电力。此外,在本说明书中,红外光是指比680nm在长波长侧的光。
其中,作为透明性等离激元材料,优选使用透明性等离激元纳米颗粒。由此,能够从透明性等离激元材料获得优异的光电转换能。
此外,在使用透明性等离激元纳米颗粒的情况下,该纳米颗粒的平均粒径优选为2~1000nm,更优选为2~500nm,进一步优选为2~100nm。通过将透明性等离激元纳米颗粒的粒径设为这样的数值范围,能够进一步提高透明性、能量转换效率。其中,纳米颗粒的平均粒径能够通过利用电子显微镜、原子力显微镜、隧道显微镜等各种显微镜的观察、或者通过动态或静态光散射法测定。
关于含有透明性等离激元材料的层,只要至少含有透明性等离激元材料而构成即可,没有特别限定。具体而言,能够通过将透明性等离激元纳米颗粒进行溅射、蒸镀、旋涂、浸渍涂敷、喷墨印刷、丝网印刷等而获得。其中,作为用于旋涂、浸渍涂敷、喷墨印刷、丝网印刷等工序的保护配体(protective ligand),可以使用阳离子性表面活性剂、阴离子性表面活性剂、非离子性表面活性剂和短配体(阳离子、阴离子、金属硫属化物)中的任意种。更具体而言,作为阳离子性表面活性剂可以使用CTAB等季铵盐型的表面活性剂,作为阴离子性表面活性剂可以使用烷基羧酸钠、烷基苯磺酸钠、烷基磺酸钠、烷基磷酸钠,作为非离子性表面活性剂可以使用单硬脂酸甘油、八乙二醇单十二烷基醚,作为短配体,可以使用巯基丙酸、硫辛酸,S2-阴离子、I-阴离子、Br-阴离子、Cl-阴离子、NO3-阴离子、Sn2S6 4-阴离子、SbInSe2-阴离子、CdCl3-阴离子、MoS4 2-阴离子、Se2-阴离子、HSe-阴离子、Te2-阴离子、HTe-阴离子、TeS3 2-阴离子、OH-阴离子、NH2-阴离子、多元酸等,当然不限定于这些。在上述中,从导电性更优异的方面考虑,优选短配体。在使用上述表面活性剂或配体的情况下,有时需要如下操作:通过烧结去除配体、表面活性剂,利用还原条件下的回火恢复LSPR,由此接合透明性等离激元纳米颗粒和透明导电性材料层。
含有透明性等离激元材料的层中的透明性等离激元颗粒的含量优选为80~100质量%,更优选为90~100质量%。通过将透明性等离激元颗粒的含量设为这样的数值范围,能够得到更高的导电性。另外,关于含有透明性等离激元材料的层中的表面活性剂和配体的含量,在含有透明性等离激元颗粒的层100质量%中,表面活性剂和配体优选为20质量%以下。通过将表面活性剂的含量设为这样的数值范围,能够获得高的导电性。
作为所使用的透明性等离激元材料没有特别限定,例如可以列举包括选自在红外区域、具体而言在波长750-2500nm的长波长区域具有LSPR吸收的透明导电性氧化物、硫化铜、磷化铜、碲化铜、硒化铜、氧化钌、氧化铼、氧化钼、氧化钨、钨青铜和铜铁矿型铜氧化物中的至少一种的纳米颗粒。
作为上述的在红外区域具有LSPR吸收的透明导电性氧化物,没有特别限定,具体而言可以列举:掺锡氧化铟、掺铝氧化铟、掺铈氧化铟、掺铝氧化锌、掺镓氧化锌、掺铟氧化锌、掺铟氧化镉、掺杂氟铟的氧化镉、掺氟氧化镉、掺氯氧化镉、掺溴氧化镉、掺铯氧化钼、掺锑氧化锡、掺氟氧化錫、氧化钛等。这些可以单独使用一种,或者混合两种以上使用。
作为上述的硫化铜,也可以广泛采用作为透明性等离激元材料公知的硫化铜,没有特别限定。具体而言,可以列举CuS、Cu2-xS(其中,0<x<1)等。这些可以单独使用一种,或者混合两种以上使用。
作为上述的磷化铜,也可以广泛采用作为透明性等离激元材料公知的磷化铜,没有特别限定。具体而言,可以列举Cu3-xP(其中,0<x<1)、CuP等。这些可以单独使用一种,或者混合两种以上使用。
作为上述的碲化铜,也可以广泛采用作为透明性等离激元材料公知的碲化铜,没有特别限定。具体而言,可以列举CuTe、Cu2-xTe(其中,0<x<1)等。这些可以单独使用一种,或者混合两种以上使用。
作为上述的硒化铜,也可以广泛采用作为透明性等离激元材料公知的硒化铜,没有特别限定。具体而言,可以列举CuSe、Cu2-xSe(其中,0<x<1)。这些可以单独使用一种,或者混合两种以上使用。
作为上述的氧化钌,也可以广泛采用作为透明性等离激元材料公知的氧化钌,没有特别限定。具体而言,可以列举RuO2、RuO2-x(其中,0<x<1)等。这些可以单独使用一种,或者混合两种以上使用。
作为上述的氧化铼,也可以广泛采用作为透明性等离激元材料公知的氧化铼,没有特别限定。具体而言,可以列举ReO2、ReO2-x(其中,0<x<1)等。这些可以单独使用一种,或者混合两种以上使用。
作为上述的氧化钼,也可以广泛采用作为透明性等离激元材料公知的氧化钼,没有特别限定。具体而言。可以列举MoO3、MoO3-x(其中,0<x<1)等。这些可以单独使用一种,或者混合两种以上使用。
作为上述的氧化钨,也可以广泛采用作为透明性等离激元材料公知的氧化钨,没有特别限定。具体而言,可以列举WO3、WO3-x(其中,0<x<1)等。这些可以单独使用一种,或者混合两种以上使用。
作为上述的钨青铜,也可以广泛采用作为透明性等离激元材料公知的钨青铜,没有特别限定。具体而言,可以列举CsxWO3(其中,0<x<1)、LiWO3、LiCsWO3、LiRbWO3、LiKWO3等碱金属-掺杂WO3。这些可以单独使用一种,或者混合两种以上使用。
作为上述的铜铁矿型铜氧化物,也可以广泛采用作为透明性等离激元材料公知的铜铁矿铜氧化物,没有特别限定。具体而言,可以列举CuAlO2、CuGaO2、CuCrO2等。这些可以单独使用一种,或者混合两种以上使用。
含有透明性等离激元材料的层的厚度优选设为1~100μm,更优选设为1~1000nm。通过将含有透明性等离激元材料的层的厚度设为这样的数值范围,能够获得透明度更高、有利于载流子的输送等效果。
优选在如上所述构成的含有透明性等离激元材料的层设置电极,由此能够有效地回收电力。作为电极,可以广泛采用如一般用于电子设备的公知的原材料,没有特别限定。其中,从确保电子设备的透明性这样的观点考虑,优选ITO、FTO、金、银、铝、碳、石墨烯、碳纳米管等这样的透明度高的原材料。
另外,在含有透明性等离激元材料的层与电极之间设有用于输送电子等载流子的载流子输送层的方式也是优选的实施方式。作为构成这种载流子输送层的材料没有特别限定,具体而言,可以列举TiO2、ZnO、SnO2、CdO、CuAlO2等的铜铁矿型铜氧化物、Spiro-MeOTAD(2,2’,7,7’-四[N,N-二对甲氧基苯基氨基]-9,9’-螺二芴)、PEDOT:PSS(聚(3,4-乙撑二氧噻吩)-聚(苯乙烯磺酸盐))、PCBM(苯基C60丁酸甲酯)、P3HT(聚(3-己基噻吩))、PPV(聚亚苯基亚乙烯基)、聚芴(Polyfluorenes)等高分子材料等。通过设置载流子输送层,能够更高效地回收电力。另外,从确保所得到的电子设备的透明性的观点考虑,作为这种载流子输送层,优选具有透明性,与上述透明性等离激元材料同样,优选波长550nm时的透射率为60%以上,更优选为80%以上。另外,对于波长550nm时的透射率的上限,也优选为100%,更优选为99%,进一步优选为95%。
作为用于形成载流子输送层的方法,没有特别限定,例如可以列举下述方法:将构成上述的载流子输送层的材料溶解于甲苯、氯仿、己烷、水、N,N-二甲基甲酰胺、乙醇、N-甲基甲酰胺等溶剂中后,通过将所得到的溶液进行涂布、喷雾等适当的方法来形成。
载流子输送层即使仅形成一层也能够得到其效果,但优选形成两层以上。这种载流子输送层的厚度优选作为层整体的厚度为1~1000nm。通过将载流子输送层的厚度设为这样的数值范围,能够进一步提高导电性。
以上,对本发明的实施方式进行了说明,但本发明不限定于这种例子,在不脱离本发明的宗旨的范围内当然可以以各种方式实施。
实施例
以下,基于实施例,更具体地说明本发明的实施方式,但本发明不限定于这些。
(实施例1)
在通过溅射法以150nm的厚度制作的、作为电极的掺锡氧化铟制玻璃(纵2cm、横2cm、厚度1cm)的一个表面,作为载流子输送层形成由TiO2构成的膜,以使载流子输送层为100nm,再在其上,作为含有透明性等离激元材料的层涂布形成由Cu2-XS得到的膜,以使具有透明性等离激元材料的层为150nm的厚度。通过喷雾热解法,对在热板上加热至500℃的掺锡氧化铟制玻璃喷雾含有四异丙醇钛的异丙醇溶液,并烧结30分钟,由此得到TiO2层。通过将混合了氯化铜(I)、硫粉末、油酸和油胺的溶液在140℃、氮气气氛下加热5分钟,得到含有Cu2-XS纳米颗粒的溶液。另外,通过将乙醇和己烷加入含有Cu2-XS纳米颗粒的溶液中进行离心分离而进行精制,使沉淀物溶解在己烷中,得到Cu2-XS纳米颗粒分散液。依次进行在掺锡氧化铟制玻璃上分别滴加Cu2-XS纳米颗粒分散液(透明性等离激元纳米颗粒溶液)、含有溴化十六烷基三甲基铵的甲醇溶液(保护剂置换用的溶液)和甲醇(去除过剩的纳米颗粒和保护剂的洗净液)、进行旋涂的操作,通过反复20次,得到Cu2-XS层。再在其上通过进行蒸镀来安装金电极,从而得到太阳能电池。
如图1所示,将氙气灯作为光源(朝日分光社生产,型号:LAX-102),以与光源正对的方式配置带通滤波器(半幅值为10nm),在从此再远离10cm的位置以与光源正对的方式设置实施例1的太阳能电池。在电流7.2A的条件下将氙气灯通电。透射上述带通滤波器时的光子数为5×1015photons cm-2s-1。
在以上的条件下,从波长790nm的长波长侧以20nm为间隔依次在每30秒后照射短波长侧的光直至430nm,结果在全部波长区域观察到伴随光照射的电流(图2)。此外,照射波长900nm的近红外光的光时,也观察到光电流(图2插图)。由此,明确了使用视觉辨认性低的短波长的光(430nm)以及近红外光(900nm)的光时,也能够作为太阳能电池发挥功能。另外,此时的太阳能电池的光透射率在波长550nm时为85%,显示高的透射性(图3)。
(实施例2)
在作为电极的钛制板(纵1cm、横5cm、厚度5mm)上通过溅射形成厚度100nm的SnO2层,通过旋涂涂布平均粒径为12nm的掺锡氧化铟纳米颗粒(25.6mg)的氯仿溶液(50μl)(旋涂条件:100rpm、15s→1000rpm、30s)。通过将所得到的电极在大气下以600度烧结30分钟,由此将掺锡氧化铟纳米颗粒与SnO2层接合。之后,在4%H2/Ar下以280度加热5小时,进行还原,由此将掺锡氧化铟纳米颗粒还原,使LSPR的吸收恢复。
按照图4所示的定位设置电极,将氙气灯作为光源(Eagle Engineering公司生产,型号:R-300-3J),在距离光源1cm的位置以与光源正对的方式配置长通滤波器,在从此再远离11cm的位置以与光源正对的方式设置上述所得的太阳能电池,之后测定光照射下的电流值。从氙气灯释放的光强度在未通过滤波器的状态下为2.3W。另外,透射处于距离光源11cm的位置的上述长通滤波器时的光强度数在800nm、1000nm、1200nm长通滤波器时为1.68W、0.525W、0.326W。
在未通过长通滤波器的条件以及通过800nm、1000nm、1200nm的长通滤波器的条件下,从氙气灯照射光时,观察到伴随光照射的电流(图5和图6)。由此,明确了使用作为透明导电性材料的ITO纳米颗粒能够进行光电转换。另外,明确了使用无视觉辨认性的近红外光(800nm以上)的光时,也作为太阳能电池发挥功能。另外,可以确认此时的太阳能电池的透光率在波长550nm时为90%,显示高透射性。
Claims (12)
1.一种电子设备,其特征在于,具有:
含有透明性等离激元材料的层。
2.如权利要求1所述的设备,其特征在于:
所述透明性等离激元材料在波长550nm时的透射率为60%以上。
3.如权利要求1或2所述的电子设备,其特征在于:
所述透明性等离激元材料为透明性等离激元纳米颗粒。
4.如权利要求3所述的电子设备,其特征在于:
所述透明性等离激元纳米颗粒为包括选自在红外区域具有LSPR吸收的透明导电性氧化物、硫化铜、磷化铜、碲化铜、硒化铜、氧化钌、氧化铼、氧化钼、氧化钨、钨青铜和铜铁矿型铜氧化物中的至少一种的纳米颗粒。
5.如权利要求3所述的电子设备,其特征在于:
所述透明性等离激元纳米颗粒为掺锡氧化铟纳米颗粒。
6.如权利要求3~5中任一项所述的电子设备,其特征在于:
所述透明性等离激元纳米颗粒的平均粒径为2~1000nm。
7.如权利要求1~6中任一项所述的电子设备,其特征在于:
还具有电极。
8.如权利要求1~7中任一项所述的电子设备,其特征在于:
还具有载流子输送层。
9.如权利要求1~8中任一项所述的电子设备,其特征在于:
该电子设备为光电转换设备。
10.一种获得电力的方法,其特征在于:
使透明性等离激元材料吸收选自红外光、紫外光和波长440nm以下的可见光中的一种以上来获得电力。
11.如权利要求10所述的方法,其特征在于:
所述透明性等离激元材料为透明性等离激元纳米颗粒。
12.如权利要求11所述的方法,其特征在于:
所述透明性等离激元纳米颗粒为在红外区域具有LSPR吸收的透明导电性氧化物。
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CN112186051A (zh) * | 2020-10-14 | 2021-01-05 | 冯云龙 | 一种F-β-Ga2O3/CuGaO2紫外光电探测器及其制备方法 |
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