CN110165024B - 微型元件转移方法 - Google Patents

微型元件转移方法 Download PDF

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CN110165024B
CN110165024B CN201811258525.XA CN201811258525A CN110165024B CN 110165024 B CN110165024 B CN 110165024B CN 201811258525 A CN201811258525 A CN 201811258525A CN 110165024 B CN110165024 B CN 110165024B
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CN110165024A (zh
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陈立宜
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Mikro Mesa Technology Co Ltd
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Abstract

依据本揭露一些实施方式，提供了一种用以转移微型元件的方法。方法包含：准备载体基板，微型元件位于载体基板上，其中粘着层位于载体基板以及微型元件之间，且粘着层与上述两者接触；借由转置头由载体基板拾取微型元件；形成液体层于接收基板上；放置微型元件于接收基板上方，使得微型元件接触至液体层并被毛细力抓住。综上所述，本揭露所提出的转置头可省略采用静电力、真空力、机械力、或以上的任意组合的转置头所需的复杂电路或机构设计，有效降低成本。

Description

微型元件转移方法
技术领域
本揭露有关于一种方法，用于将微型元件由载体基板转移至接收基板。
背景技术
近年来，发光二极管(light-emitting diodes,LEDs)在商业照明应用中逐渐普及。作为光源，LEDs具有低耗能、寿命长、小尺寸以及开关迅速等优点。因此传统的照明工具(如白炽灯)已经渐渐的被发光二极管光源所取代。
传统用于转移元件的技术包含由转移晶圆至接收晶圆进行晶圆键合。一种此类的实现方式为「直接接合」(direct printing)，牵涉一个将阵列元件由转移晶圆键合至接收晶圆的步骤，并接着移除转移晶圆。另一个实现方式为「间接接合」(transfer printing)，牵涉两个接合/剥离步骤。在间接接合中，转移晶圆可由施体晶圆拾取阵列元件，接着将阵列元件接合至接收晶圆，然后移除转移晶圆。
发明内容
本发明的目的在于，克服传统转移元件的技术存在的缺陷，而提供微型元件转移方法，所要解决的技术问题是使其有效降低成本，从而更加适于实用。
依据本揭露一些实施方式，提供了一种用以转移微型元件的方法。方法包含：准备载体基板，微型元件位于载体基板上，其中粘着层位于载体基板以及微型元件之间，且粘着层与上述两者接触；借由转置头由载体基板拾取微型元件；形成液体层于接收基板上；放置微型元件于接收基板上方，使得微型元件接触至液体层并被毛细力抓住。
在一些实施方式中，微型元件借由第一粘着力粘着至粘着层，微型元件借由第二粘着力贴附至转置头，且毛细力大于第一粘着力以及第二粘着力，使得执行放置时微型元件自转置头分离并粘贴至接收基板。
在一些实施方式中，第一粘着力以及第二粘着力包含凡得瓦力。
在一些实施方式中，第二粘着力大于第一粘着力。
在一些实施方式中，微型元件的横向长度小于40微米。
在一些实施方式中，在拾取之前，光阻层位于微型元件上，使得执行拾取时该微型元件通过光阻层贴附至转置头。
在一些实施方式中，微型元件借由第一粘着力粘着至第一粘着层，微型元件借由第三粘着力通过光阻层贴附至转置头，且毛细力大于第一粘着力以及第三粘着力，使执行放置时微型元件由转置头分离并粘贴至接收基板。
综上所述，本揭露所提出的的转置头可省略采用静电力、真空力、机械力、或以上的任意组合的转置头所需的复杂电路或机构设计，有效降低成本。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，而可依照说明书的内容予以实施，并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂，以下特举较佳实施例，并配合附图，详细说明如下。
附图说明
图1绘示依据本揭露一些实施方式将微型元件由载体基板转移至接收基板的方法的流程图。
图2绘示依据本揭露一些实施方式中用以转移微型元件的方法的一个中间阶段的剖面示意图。
图3绘示依据本揭露一些实施方式中用以转移微型元件的方法的一个中间阶段的剖面示意图。
图4A绘示依据本揭露一些实施方式中用以转移微型元件的方法的一个中间阶段的剖面示意图。
图4B绘示依据本揭露一些实施方式中用以转移微型元件的方法的一个中间阶段的剖面示意图。
图5A绘示依据本揭露一些实施方式中用以转移微型元件的方法的一个中间阶段的剖面示意图。
图5B绘示依据本揭露一些实施方式中用以转移微型元件的方法的一个中间阶段的剖面示意图。
图6绘示依据本揭露一些实施方式中用以转移微型元件的方法的一个中间阶段的剖面示意图。
图7绘示依据本揭露一些实施方式中用以转移微型元件的方法的一个中间阶段的剖面示意图。
图8A绘示依据本揭露一些实施方式中用以转移微型元件的方法的一个中间阶段的剖面示意图。
图8B绘示依据本揭露一些实施方式中用以转移微型元件的方法的一个中间阶段的剖面示意图。
【主要元件符号说明】
100：微型元件转移方法
110、120、130、140：操作
210：载体基板
220：微型元件
222：光阻层
230：粘着层
240：转置头
242：抓取区域
244：凹槽
250：液体层
252：弯月面
260：接收基板
具体实施方式
以下将以图式揭露本发明的多个实施方式，为明确说明起见，许多实务上的细节将在以下叙述中一并说明。然而，应了解到，这些实务上的细节不应用以限制本发明。也就是说，在本发明部分实施方式中，这些实务上的细节是非必要的。此外，为简化图式起见，一些习知惯用的结构与元件在图式中将以简单示意的方式绘示之。并且，除非有其他表示，在不同图式中相同的元件符号可视为相对应的元件。这些图式的绘示是为了清楚表达这些实施方式中各元件之间的连接关系，并非绘示各元件的实际尺寸。
图1绘示将微型元件由载体基板转移至接收基板的方法的流程图。图2至图7绘示图1的微型元件转移方法100的中间阶段的剖面示意图。请参照图1至图7。微型元件转移方法100由操作110开始，其中载体基板210上备有微型元件220。粘着层230位于并接触至载体基板210与微型元件220之间(参照图2)。微型元件转移方法100接着进行操作120，其中借由转置头240将微型元件220自载体基板210拾取(参照图3)。微型元件转移方法100接着进行操作130以及140，其中液体层250或被图案化的液体层250形成于接收基板260上(参照图4A以及图4B)，接着已经被拾取的微型元件220被放置于接收基板260上方，使微型元件220接触至液体层250并被液体层250所产生的毛细力抓住(参照图5A、图5B以及图6)。在被抓住后，转置头240自微型元件220分离，且微型元件220留在接收基板260上并实质上地被维持于接收基板260上一个可控制区域以内的位置(参照图7)。
虽然前面的段落中与图1仅绘示了「一」个微型元件220，然在实际应用中可使用「多」个微型元件220，此亦落入本揭露的范畴之中，其细节可见于后文中所绘示的实施方式。
请参照图2。如上文中所示，粘着层230位于载体基板210与多个微型元件220之间。更明确而言，粘着层230接触至载体基板210与微型元件220。在一些实施方式中，借由涂布具有粘着能力的材料至载体基板210上来形成粘着层230。可由旋转涂布机(spin coater)、狭缝涂布机(slit coater)或任何上述组合来涂布粘着层230。在一些实施方式中，粘着层230可由具有粘着能力的有机材料制作，诸如环氧树脂(epoxy)、聚甲基丙烯酸甲酯(polymethylmethacrylate,PMMA)、聚硅氧烷(polysiloxanes)、硅或上述的任意组合。进一步而言，粘着层230可具有介于约1微米至约100微米之间的厚度。
粘着力fAD为执行降低后粘着层230对每个微型元件220的粘着力。所述降低是指将粘着层230对每个微型元件220的初始粘着力降低，其可在一些微型元件220被拾取之前执行。在一些实施方式中，可借由施加电场、电磁辐射、热、超音波、机械力、压力或上述的任意组合于粘着层230上来执行所述降低，但本揭露并不以此为限。在一些实施方式中，微型元件220的横向长度介于约1微米至约100微米之间。举例而言，微型元件220具有约为10微米乘以10微米的表面面积，所述降低后的粘着力fAD为约50纳米牛顿(nanonewton,nN)。本揭露的实施方式并不以上述为限。可依据实际应用情形对粘着层230执行适当的改变。粘着力fAD可包含凡得瓦力(Van der Waals force)，但并不以此为限。
在一些实施方式中，载体基板210可为固体基板。固体基板可由玻璃、硅、聚碳酸酯(polycarbonate,PC)、丙烯腈丁二烯苯乙烯(acrylonitrile butadiene styrene,ABS)或以上的任意组合制作。本揭露的实施方式并不以此为限。可依据实际应用情形对载体基板210执行适当的改变。
在一些实施方式中，微型元件220可为发光结构，如具有对应至能谱中特定区域的能带隙的化合物半导体。举例而言，发光结构可包含一或多层基于II-VI族材料(如：ZnSe、ZnO)或III-V族材料(如：GaN、AlN、InN、InGaN、GaP、AlInGaP、AlGaAs或上述的合金)。在一些其他实施方式中，微型元件220亦可为集成电路(integrated circuit,IC)或微机电系统(microelectromechanical,MEMS)元件，且并不应以上述为限。
请参照图3。如上文所述，一些微型元件220被转置头240自载体基板210拾取。在一些实施方式中，转置头240可借由各种方式(诸如：真空、粘着、磁力吸引、静电吸引、或类似者)施加拾取压力或拾取力于每个微型元件220上。后文中仅讨论采用粘着力的实施方式，但上述其他类型的力仍未脱本揭露的范畴。在一些实施方式中，转置头240可具有多个抓取区域242，用以拾取微型元件220。亦可具有凹槽244，位于抓取区域242之间。转置头240的抓取区域242可借由具粘着性的材料制作，或者，转置头240可具有位于其上的图案化粘着层，使得当转置头240接触至微型元件220时，每个微型元件220可由粘着力fTD拾取。在一些实施方式中，对于具有表面积约为10微米乘以10微米的一个微型元件220来说，所述的粘着力fTD约为100纳米牛顿至约1000纳米牛顿之间。粘着力fTD可包含凡得瓦力，但并不以此为限。
如上文中所述，在一些实施方式中，在拾取之前可先降低初始的粘着力以形成粘着力fAD，使得在执行拾取时粘着力fTD大于粘着力fAD。
请参照图4A以及图4B。如上文中所述，液体层250形成于接收基板260上。液体层250可被形成为接收基板260上的单一层(如图4A所示)或被图案化为在接收基板260上的不连续部分(如图4B所示)。在图4B中，液体层250可为接下来微型元件220放置的位置。接收基板260可为显示基板、照明基板、具有功能元件(诸如电晶体或集成电路)的基板或具有金属布线的基板，但并不以此为限。在一些实施方式中，可在包含蒸气的环境中降低接收基板260的温度来形成液体层250，使得至少一部份的蒸气凝结以形成液体层250于接收基板260上。在一些实施方式中，接收基板260的温度被降低至约为水露点，使得环境中的水蒸气凝结以形成液态水作为液体层250。在这些实施方式中，液体层250包含水。在其他实施方式中，液体层250可包含甲醇(methyl alcohol)、乙醇(ethanol)、甘油(glycerol)、以上的任意组合、或类似物。进一步而言，液体层250的形成亦可由喷墨印刷(inkjet printing)、辊涂(roller coating)，浸涂(dip coating)或类似方法达成。
请参照图5A、图5B以及图6。如上文中所述，被拾取的微型元件220被转置头240放置于接收基板260上方，使得每个微型元件220接触至液体层250，并被毛细力fCF抓住。更明确而言，微型元件220被放置于接近接收基板260的位置，使得液体层250可以抓住微型元件220。如图6中所示，液体层250的弯月面252是由毛细力fCF所造成。微型元件220被介于微型元件220与接收基板260之间的液体层250所产生的毛细力fCF抓住。在一些实施方式中，当微型元件220被毛细力fCF抓住时，液体层250的厚度小于微型元件220的厚度。在一些实施方式中，接收基板260可进一步包含至少一个位于其上的导电垫，且微型元件220中之一者位于接近导电垫的区域，并被介于微型元件220中之一者与导电垫之间的液体层250所产生的毛细力fCF抓住。
请参照图7。如上所述，在微型元件220被毛细力fCF抓住后，微型元件220由转置头240分离。在一些实施方式中，微型元件220借由粘着力fAD粘着至粘着层230。一些微型元件220借由粘着力fTD贴附至转置头240，且毛细力fCF大于粘着力fTD，使得在执行放置时微型元件220由转置头240分离并粘贴至接收基板260。
明确来说，微型元件220中之一者的横向长度可小于40微米，但并不以此为限。在其他实施方式中，微型元件220中之一者亦可为圆柱形，三角形，长方体，六边形，八边形或多边形。如此一来，由于微型元件220的尺寸影响，毛细力fCF大于粘着力fTD。明确而言，当物件的尺寸逐渐减小，毛细力对物件的影响将逐渐超越其他施加于物件的力，因此有关于具有上述区间内的尺寸的微型元件220，毛细力fCF将变成主要的作用力。更明确而言，在具有这些实施方式中所提到的范围内的尺寸的微型元件220的力将遵守下方的不等式：
(1)fAD<fTD<fCF
其中，可由分别选择适当的材料组合来制作粘着层230以及接触至微型元件220的抓取区域242的表面来满足不等式(1)左侧的fAD<fTD。一般而言，每个单位面积的粘着力fAD以及fTD并不会随着微型元件220的尺寸改变。在一些实施方式中，在转置头240接触至微型元件220后，可借由调整转置头240远离载体基板210的速度来额外地修改粘着力fTD。速度越快，粘着力fTD就越大。如此一来，即可借由粘着型的转置头240来完成上述的转移程序。并可省略采用静电力、真空力、机械力、或以上的任意组合的转置头所需的复杂电路或机构设计。粘着型转置头240可以完成转移程序，且程序的成本被有效降低。
在完成转移程序后，液体层250被蒸发，使得至少一个微型元件220被贴附至接收基板260或在接收基板260上的至少一个导电垫。微型元件220可分别具有位于其上的电极，用以通过导电垫电性连接至接收基板260。导电垫以及电极的细节在此省略。可借由多种方法来蒸发液体层250，举例而言，提升接收基板260或导电垫的温度。在液体层250被蒸发后，微型元件220被粘贴至接收基板260。
在以上由图1至图7所支持的实施方式中，在一些微型元件220被放置于接收基板260上方后，微型元件220被介于微型元件220与接收基板260之间的液体层250所产生的毛细力fCF抓住。如此一来，因为液体层250的存在，即可借由省略了复杂电路设计的粘着型转置头240来完成转移程序，并以此降低程序成本。
接下来请参照的图8A以及图8B。图8A以及图8B绘示图1中所示的微型元件转移方法100的中间阶段的剖面示意图。在其他实施方式中，至少一个微型元件220具有位于其上的光阻层222。在制造程序中(如切割)可选择性地需要光阻层222。光阻层222被涂布至至少一个微型元件220上，以便在所述光阻层222被图案化后作为用以进行切割的遮罩。光阻层222可为正性光阻层或负性光阻层，但并不以此为限。在本实施方式中，在拾取之前(参照图8A)光阻层222位于微型元件220上，且当执行拾取时(参照图8B)微型元件220通过光阻层222贴附至转置头240。
总结而言，上文中由图1所支持的微型元件转移方法100亦可应用至本实施方式，因为毛细力fCF仍然大于介于光阻层222与转置头240之间的粘着力fTA。更明确而言，微型元件220借由粘着力fAD粘着至粘着层230，微型元件220借由粘着力fTA通过光阻层222贴附至转置头240，且毛细力fCF大于粘着力fTA，使得在执行放置时，微型元件220由转置头240分离并粘贴至接收基板260。粘着力fTA可包含凡得瓦力，但并不以此为限。在转移的程序之间，上述力遵守下式：
(2)fAD<fTA<fCF
其中，可由选择适当的材料组合来分别制作粘着层230、光阻层222以及转置头240的抓取区域242的表面来满足左侧的不等式(2)fAD<fTA。举例而言，粘着层230可由上述材料制作。抓取区域242可由上述用以制作粘着层230的材料制作，以及聚二甲基硅氧烷(polydimethylsiloxane)。光阻层222可由丙烯酸树脂(acrylic resin)或酚醛清漆树脂(novolak resin)制作。
本揭露已由范例及上述实施方式描述，应了解本发明并不限于所揭露的实施方式。相反的，本发明涵盖多种更动及近似的布置(如，此领域中的通常技艺者所能明显得知者)。因此，附加的权利要求应依据最宽的解释以涵盖所有此类更动及近似布置。

Claims (5)

1.一种微型元件转移方法，其特征在于，包含：
准备载体基板，微型元件位于该载体基板上，其中粘着层位于该载体基板以及该微型元件之间，且接触该载体基板以及该微型元件，其中该微型元件借由第一粘着力粘着至该粘着层；
借由转置头由该载体基板拾取该微型元件，其中该微型元件借由第二粘着力贴附至该转置头；
形成液体层于接收基板上；以及
放置该微型元件于该接收基板上方，使得该微型元件接触该液体层并被毛细力抓住，其中该微型元件的横向长度小于40微米，使得该毛细力大于该第一粘着力以及该第二粘着力，从而使得在放置执行时，该微型元件自该转置头分离并粘贴至该接收基板。
2.根据权利要求1所述的微型元件转移方法，其特征在于：其中该第一粘着力以及该第二粘着力包含凡得瓦力。
3.根据权利要求1所述的微型元件转移方法，其特征在于：其中该第二粘着力大于该第一粘着力。
4.根据权利要求1所述的微型元件转移方法，其特征在于：其中在该拾取之前，光阻层位于该微型元件上，使得该拾取执行时，该微型元件通过该光阻层贴附至该转置头。
5.根据权利要求4所述的微型元件转移方法，其特征在于：其中该微型元件借由该第二粘着力通过该光阻层贴附至该转置头。
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