CN110161317A - A kind of solid insulating material surface dielectric characteristic comprehensive measurement device - Google Patents
A kind of solid insulating material surface dielectric characteristic comprehensive measurement device Download PDFInfo
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- CN110161317A CN110161317A CN201810141610.1A CN201810141610A CN110161317A CN 110161317 A CN110161317 A CN 110161317A CN 201810141610 A CN201810141610 A CN 201810141610A CN 110161317 A CN110161317 A CN 110161317A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
- G01R27/2617—Measuring dielectric properties, e.g. constants
- G01R27/2623—Measuring-systems or electronic circuits
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Abstract
The invention discloses a kind of solid insulating material surface dielectric characteristic comprehensive measurement devices, the device includes: that secondary electron measurement module includes electron gun and collector, the electron gun is set to the surface of the collector, and the central axis of the electron gun and the collector is on same straight line；Sample stage module, is equipped with sample platform, and the bottom surface of the sample platform is equipped with the sliding rail along three directions of X, Y, Z axis；Corona charging module includes high-field electrode and corona pin, and the high-field electrode is connect with the corona pin；Surface potential measurement module comprising high voltage interface and electrostatic probe, the electrostatic probe are connected with the high voltage interface；Vacuum/hyperbar system, it includes outer chamber, gas interface, vacuum interface, gas cylinder and vacuum pump, the gas interface and the vacuum interface are set on the exocoel body wall and are connected to the outer chamber, the gas cylinder is connected with the gas interface, and the vacuum pump is connect with the vacuum interface.
Description
Technical field
The present invention relates to material surface charge characteristic field of measuring technique, in particular to a kind of solid insulating material
Surface dielectric characteristic comprehensive measurement device.
Background technique
Insulating materials surface second electron emission coefficiency, surface charge properties and charge trap are reflection material surface characteristics
Key parameter.The electron detachment ability of surface second electron emission coefficiency reflection material surface layer；Charge trap reflects material
The charge confinement ability of superficial layer；Surface charge is the charge buildup of material surface and the concentrated expression of dissipation characteristic.Three ginsengs
Number is not isolated existing, but influences each other and be mutually related.Current device is all in three parameters of independent measurement
Some parameter, and environment and measuring condition difference are measured, there are problems that experimental data can not compare.Meanwhile single parameter
Measurement really can not comprehensively reflect the dielectric properties on insulating materials surface, can only reflect a certain specific process unilaterally.Mesh
The device of preceding measurement charge trap is mostly to inject charge to sample by corona, can only measure material surface charge trap ginseng
Number, is not capable of measuring the trap parameters of certain depth.
The Chinese patent of Patent No. 201410022709.1 discloses a kind of based on the secondary of hemispherical collecting pole structure
Electron emission coefficiency measuring device, the device distinguish true secondary electron and backscattered electron by multilayer ball-type mesh screen, pass through arteries and veins
The mode of electron beam is rushed to reduce influence of the dielectric material surface electrification to secondary, which mainly measures vacuum ring
The secondary electron emission characteristic of material under border is not capable of measuring the surface charge and trap parameters distribution of material.Patent No.
201410023001.8 Chinese patent discloses a kind of plate collector secondary electron yield measuring device, the device
A kind of rotary-type sample stage is provided, each measurement front and back sample turns over certain angle and same position is avoided repeatedly to measure, with this
It is influenced to reduce insulating materials surface charge to secondary electron yield, but there are between biggish between the collector and sample
Gap, thus secondary electron collection efficiency it is difficult to ensure that；The Chinese patent of Patent No. 201010617890.2 discloses a kind of area
The test device of electronics and backscattered electron in two times, the device announce what a kind of dome-type was made of collector and retardance aperture plate
Collection structure, by the differentiation and the secondary electron that add different voltage realization secondary electron and backscattered electron to retardance aperture plate
Energy spectrum analysis, but the device is only used for the measurement of metal material, and material surface charge buildup can be tight when measuring insulating materials
Ghost image rings measurement result；Both devices can only equally measure the secondary electron characteristic of material, not be capable of measuring the surface electricity of material
Lotus and trap parameters distribution.
The Chinese patent of Patent No. 2009100231880 discloses a kind of automatically measuring charge distribution on surface of solid medium
Device, which measures insulating materials surface charge by electrostatic probe, and can be measured by two-dimension moving platform two-dimensional
Distribution of charges, but the device can only measure surface charge under a kind of environment of fixation, and not be capable of measuring the secondary electron of material
Emission characteristics.
The Chinese patent of Patent No. 2014104587908 discloses a kind of solid dielectric material trap parameters acquisition system
System, the device inject charge to sample by the way of three electrode corona chargings, are heated by heating system to sample, electrostatic is visited
Head measurement surface charge decaying, calculates sample trap parameters according to surface charge attenuation, which can only measure material table
The charge trap of layer, is not capable of measuring the trap parameters of certain depth；The device is not capable of measuring the secondary of material simultaneously
Characteristic.
Summary of the invention
To solve the above problems, the purpose of the present invention is to provide a kind of comprehensive surveys of solid insulating material surface dielectric characteristic
Device is measured, the composite measurement of under same environment same sample, same position may be implemented, there is repeatability, it can be comprehensive
Accurately characterize the surface dielectric state of material.
The present invention provides a kind of solid insulating material surface dielectric characteristic comprehensive measurement device, which includes:
Secondary electron measurement module comprising electron gun and collector, the electron gun be set to the collector just on
Side, and the central axis of the electron gun and the collector is on same straight line；
Sample stage module, is equipped with sample platform, and the bottom surface of the sample platform is equipped with the sliding rail along three directions of X, Y, Z axis
Road；
Corona charging module comprising high-field electrode and corona pin, the high-field electrode are connect with the corona pin；
Surface potential measurement module comprising high voltage interface and electrostatic probe, the electrostatic probe and the high voltage interface
Connection；
Vacuum/hyperbar system comprising outer chamber, gas interface, vacuum interface, gas cylinder and vacuum pump, the gas
Interface and the vacuum interface are set on the exocoel body wall and are connected to the outer chamber, and the gas cylinder and the gas connect
Mouth connection, the vacuum pump are connect with the vacuum interface.
As a further improvement of the present invention, the sample stage module, collector, electrostatic probe and the corona pin
It is respectively positioned on inside the outer chamber, and the sample stage module is in the collector, electrostatic probe and the corona pin
Lower section.
As a further improvement of the present invention, the sample stage module is equipped with temperature control system.
As a further improvement of the present invention, the center of the collector is equipped with through-hole, and the aperture of the through-hole
It is adjustable.
As a further improvement of the present invention, it is equipped with support frame below the electrostatic probe and the corona pin, it is described
Electrostatic probe and the corresponding support frame of the corona pin are slidably connected.
As a further improvement of the present invention, the temperature regulating range of the temperature control system is 150 DEG C~150 DEG C of ﹣.
As a further improvement of the present invention, the output electron energy of the electron gun is 50eV~30k eV.
As a further improvement of the present invention, it is equipped in the outer chamber and surveys pressure and vacuum.
As a further improvement of the present invention, insulation protection system is equipped with around the high-field electrode and the high voltage interface
System.
As a further improvement of the present invention, sliding rail length of the sample mesa base along X, Y, Z axis direction is distinguished
Equal to the outer chamber along the length in X, Y, Z axis direction.
The invention has the benefit that a kind of solid insulating material surface dielectric characteristic composite measurement dress of the present invention
It sets, same sample under same environment can be realized by the switching of three kinds of different operating platforms, the secondary electron of same position is sent out
Penetrate the composite measurement of coefficient, surface charge and charge trap parameter；Solid insulating material surface dielectric of the present invention simultaneously
Characteristic comprehensive measurement device realizes that sample injects the accurate control of the quantity of electric charge and injection depth by control electron beam line and energy
System, to measure sample different depth charge trap parameter.
Detailed description of the invention
Fig. 1 is a kind of solid insulating material surface dielectric characteristic comprehensive measurement device whole three described in the embodiment of the present invention
Tie up structural schematic diagram；
Fig. 2 is a kind of solid insulating material surface dielectric characteristic comprehensive measurement device section described in the embodiment of the present invention
Figure.
In figure,
1, secondary electron measurement module；2, sample stage module；3, corona charging module；4, surface potential measurement module；5,
Electron gun；6, outer chamber；7, collector；8, sample；9, sample stage；10, high-field electrode；11, electrostatic is popped one's head in；12, corona pin；
13, gas interface；14, vacuum interface；15, gas cylinder；16, vacuum pump.
Specific embodiment
The present invention is described in further detail below by specific embodiment and in conjunction with attached drawing.
It as shown in Figs. 1-2, is a kind of solid insulating material surface dielectric characteristic composite measurement described in the embodiment of the present invention
Device, the device include:
Secondary electron measurement module 1 comprising electron gun 5 and collector 7, electron gun 5 are set to the surface of collector 7,
And the central axis of electron gun 5 and collector 7 is on same straight line；The electron beam that electron gun 5 emits can pass through collector 7 and bang
Sample is hit, the secondary electron that sample generates after being excited is collected the collection of pole 7, collects the electron beam current of electrode current and electron gun
The ratio between be secondary electron yield.
Sample stage module 2, is equipped with sample platform 9, and the bottom surface of sample platform 9 is equipped with the sliding rail along three directions of X, Y, Z axis
Road；Sample 8 is placed on sample stage 9, and sample platform 9 can be moved freely along the sliding rail in three directions of X, Y, Z axis,
To control the movement of sample 8.Realize the scanning survey to 8 difference of sample or Different Plane, while achievable different moulds
The measurement of block.
Corona charging module 3 comprising high-field electrode 10 and corona pin 12, high-field electrode 10 are connect with corona pin 12；Electricity
It has a fainting spell during acupuncture treatment and 12 is connect with external power supply by high-field electrode 10, corona pin 12 then can be to insulated sample injection charge.
Surface potential measurement module 4 comprising high voltage interface and electrostatic probe 11, electrostatic probe 11 and high voltage interface connect
It connects；Surface potential measurement module 4 is for electron gun 5 or corona charging module 3 to material surface after material surface injection charge
The measurement of current potential can get the distribution and charge trap parameter of material surface charge according to surface potential curve.
Vacuum/hyperbar system comprising outer chamber 6, gas interface 13, vacuum interface 14, gas cylinder 15 and vacuum pump 16,
Gas interface 13 and vacuum interface 14 are set on 6 wall of outer chamber and are connected to outer chamber 6, and gas cylinder 15 and gas interface 13 connect
It connects, vacuum pump 16 is connect with vacuum interface 14.Vacuum/hyperbar system may be implemented from high vacuum to hyperbar experimental situation
Conversion, when needing high vacuum experimental situation, then opens vacuum pump 16 and closing gas interface 13 can make outer chamber 6 reach true
Dummy status；When needing hyperbar experimental situation, then opens gas cylinder 15 and close vacuum interface 14, it is outside by gas interface 13
It is passed through gas in cavity 6, to realize hyperbar experimental situation.Gas in gas cylinder 15 requires to determine according to specific experiments.
Further, sample stage module 2, collector 7, electrostatic probe 11 and corona pin 12 are respectively positioned on inside outer chamber 6, and
Sample stage module 2 is in the lower section of collector 7, electrostatic probe 11 and corona pin 12.Sample stage module 2, collector 7, electrostatic are visited
First 11 and corona pin 12 be respectively positioned on inside outer chamber 6, require according to specific experiments, sample is in vacuum or height in experimentation
The ambient condition of air pressure.Sample stage module 2 is set to 12 lower section of collector 7, electrostatic probe 11 and corona pin, facilitates sample stage mould
Mobile handoff of the block 2 under three kinds of Working pasitions.
Further, sample stage module 2 is equipped with temperature control system.The temperature inversion of sample stage 9 may be implemented in temperature control system, real
The measurement of material surface comprehensive performance under existing different temperatures environment.
Further, the center of collector 7 is equipped with through-hole, and the pore size of through-hole is adjustable.What electron gun 5 issued
The through-hole that electron beam passes through the center position of collector 7 is penetrated on sample 8, and the pore size of through-hole is adjustable, can be for difference
The electron beam of focal spot passes through.
Further, it is equipped with support frame below electrostatic probe 11 and corona pin 12, electrostatic probe 11 and corona pin 12 are equal
Corresponding support frame is slidably connected.Electrostatic probe 11 can be moved up and down with corona pin 12 along its corresponding support frame, from
And convenient for accurately grasping its relative position between sample 8 in experimentation, make electrostatic 11 preferably complete paired samples 8 of probe
The scanning of surface charge injects the charge on preferably complete 8 surface of paired samples of corona pin 12.
Further, the temperature regulating range of temperature control system is 150 DEG C~150 DEG C of ﹣.It can be to sample by temperature control system
The temperature of platform module 2 realizes adjusting within the scope of 150 DEG C~150 DEG C of ﹣, and it is comprehensive to meet material surface under different temperatures environment
The measurement of performance can be adjusted during specific experiment according to temperature required for testing.
Further, the output electron energy of electron gun 5 is 50eV~30k eV.
Further, it is equipped in outer chamber 6 and surveys pressure and vacuum.Pressure and vacuum are surveyed for characterizing outer chamber
Pressure and vacuum degree in 6, to realize the measurement of material surface comprehensive performance under different pressures environment.Survey pressure and vacuum degree dress
It sets and existing pressure measurement and vacuum measurement equipment can be selected, as long as can satisfy experiment demand and do not influence experiment effect
Measuring device can be selected.
Further, be equipped with insulation protection system around high-field electrode 10 and high voltage interface, insulation protection system according to
External power supply is applied alive amplitude and is determined, need to meet pressure resistance and the requirement of air-tightness simultaneously.
Further, sliding rail length of 9 bottom of sample platform along X, Y, Z axis direction is respectively equal to outer chamber 6 along X, Y, Z
The length of axis direction.Guarantee that sample 8 can be surveyed in secondary electron measurement module 1, corona charging module 3 and surface potential with this
Toggling between amount 4 three Working pasitions of module, completes the parameter measurement of different function module.
Embodiment 1
Secondary electron yield, surface charge and charge trap measuring process under high vacuum environment:
1) sample 8 is placed on sample stage 9, sets the temperature of sample stage 9, outer chamber 6 is vacuumized, heat sample 8
To assigned temperature.
2) sample stage 9 is moved to 7 lower section of collector, sets 5 beam energy of electron gun and line IP, beam bombardment
Material surface, secondary electron collector 7 collect secondary current ISE, according to secondary electron yield σ=ISE/IPCalculate secondary electricity
Sub- emission ratio.
3) it is charged using electron gun 5 to sample.
4) mobile sample stage 9 measures sample 8 to 11 lower section of electrostatic probe of surface potential measurement module 4 after charging complete
The distribution of surface potential is distributed by surface potential and obtains surface charge distribution characteristic and charge trap parameter.
5) after using electron gun 5 to sample charging, rapidly then cooling sample 8 linearly rises to 100 DEG C of ﹣ to sample stage 9
Temperature repeats step 4), measures the surface potential distribution in 8 temperature-rise period of sample, can get the charge of sample under the conditions of thermostimulation
Trap parameters distribution.
Embodiment 2
Hyperbaric environment lower surface current potential and charge trap measuring process:
1) sample 8 is placed first to sample stage 9, sets 9 temperature of sample stage, heating sample 8 to assigned temperature.
2) sample stage 9 is moved to 12 lower section of corona pin, and working gas is filled with after vacuumizing to outer chamber 6 to certain air pressure.
3) to corona pin 12 plus certain voltage, apart from 8 surface certain distance of sample, charge is injected to sample 8.
4) 11 lower section of electrostatic probe of mobile example platform 9 to surface potential measurement module 4 measures 8 surface potential decay of sample
Curve obtains surface charge distribution characteristic by surface potential decay curve and calculates material charge trap parameter.
5) after corona charging module is to sample charging, rapidly then cooling sample linearly rises to 100 DEG C of ﹣ to sample stage 9
Temperature repeats step 4), measures the surface potential distribution in 8 temperature-rise period of sample, can get the charge of sample under the conditions of thermostimulation
Trap parameters distribution.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of solid insulating material surface dielectric characteristic comprehensive measurement device characterized by comprising
Secondary electron measurement module (1) comprising electron gun (5) and collector (7), the electron gun (5) are set to the collection
The surface of pole (7), and the central axis of the electron gun (5) and the collector (7) is on same straight line；
Sample stage module (2) is equipped with sample platform (9), and the bottom surface of the sample platform (9) is equipped with along three directions of X, Y, Z axis
Sliding rail；
Corona charging module (3) comprising high-field electrode (10) and corona pin (12), the high-field electrode (10) and the corona
Needle (12) connection；
Surface potential measurement module (4) comprising high voltage interface and electrostatic probe (11), the electrostatic probe (11) and the height
Crimp mouth connection；
Vacuum/hyperbar system comprising outer chamber (6), gas interface (13), vacuum interface (14), gas cylinder (15) and vacuum
Pump (16), the gas interface (13) and the vacuum interface (14) on the outer chamber (6) wall and with the exocoel
Body (6) connection, the gas cylinder (15) and the gas interface (13) connect, the vacuum pump (16) and the vacuum interface (14)
Connection.
2. solid insulating material surface dielectric characteristic comprehensive measurement device according to claim 1, which is characterized in that described
Sample stage module (2), collector (7), electrostatic probe (11) and the corona pin (12) are respectively positioned in the outer chamber (6)
Portion, and the sample stage module (2) is under the collector (7), electrostatic probe (11) and the corona pin (12)
Side.
3. solid insulating material surface dielectric characteristic comprehensive measurement device according to claim 1, which is characterized in that described
Sample stage module (2) is equipped with temperature control system.
4. solid insulating material surface dielectric characteristic comprehensive measurement device according to claim 1, which is characterized in that described
The center of collector (7) is equipped with through-hole, and the pore size of the through-hole is adjustable.
5. solid insulating material surface dielectric characteristic comprehensive measurement device according to claim 1, which is characterized in that described
Support frame, the electrostatic probe (11) and the corona pin (12) are equipped with below electrostatic probe (11) and the corona pin (12)
Corresponding support frame is slidably connected.
6. solid insulating material surface dielectric characteristic comprehensive measurement device according to claim 3, which is characterized in that described
The temperature regulating range of temperature control system is 150 DEG C~150 DEG C of ﹣.
7. solid insulating material surface dielectric characteristic comprehensive measurement device according to claim 1, which is characterized in that described
The output electron energy of electron gun (5) is 50eV~30k eV.
8. solid insulating material surface dielectric characteristic comprehensive measurement device according to claim 1, which is characterized in that described
It is equipped in outer chamber (6) and surveys pressure and vacuum.
9. solid insulating material surface dielectric characteristic comprehensive measurement device according to claim 1, which is characterized in that described
Insulation protection system is equipped with around high-field electrode (10) and the high voltage interface.
10. solid insulating material surface dielectric characteristic comprehensive measurement device according to claim 1, which is characterized in that institute
It states sliding rail length of sample platform (9) bottom along X, Y, Z axis direction and is respectively equal to the outer chamber (6) along X, Y, Z axis direction
Length.
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Cited By (4)
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| CN111505387A (en) * | 2020-04-24 | 2020-08-07 | 西安交通大学 | Method for testing microwave dielectric property of dielectric material under irradiation condition |
| CN111521142A (en) * | 2020-04-10 | 2020-08-11 | 金瓜子科技发展（北京）有限公司 | Paint surface thickness measuring method and device and paint film instrument |
| CN114047229A (en) * | 2021-11-11 | 2022-02-15 | 全球能源互联网研究院有限公司 | Polymer film medium charge transport microscopic parameter extraction device and method |
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| CN114047229A (en) * | 2021-11-11 | 2022-02-15 | 全球能源互联网研究院有限公司 | Polymer film medium charge transport microscopic parameter extraction device and method |
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