CN110149765B - Method for manufacturing protective film on circuit substrate - Google Patents
Method for manufacturing protective film on circuit substrate Download PDFInfo
- Publication number
- CN110149765B CN110149765B CN201910344465.1A CN201910344465A CN110149765B CN 110149765 B CN110149765 B CN 110149765B CN 201910344465 A CN201910344465 A CN 201910344465A CN 110149765 B CN110149765 B CN 110149765B
- Authority
- CN
- China
- Prior art keywords
- circuit
- protective film
- stripping
- circuit substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/288—Removal of non-metallic coatings, e.g. for repairing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/0264—Peeling insulating layer, e.g. foil, or separating mask
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
The invention discloses a method for manufacturing a protective film layer on a circuit substrate, which comprises the following steps: manufacturing a stripping pattern layer on a circuit surface of a circuit substrate, wherein the stripping pattern layer covers a first circuit area of the circuit substrate and exposes a second circuit area of the circuit substrate; manufacturing a protective film layer on the circuit surface of the circuit substrate, wherein the protective film layer covers a second circuit area of the circuit substrate and a stripping pattern layer positioned on the first circuit area, and a first bonding force between the protective film layer and the circuit substrate is greater than a second bonding force between the protective film layer and the stripping pattern layer; wiping the protective film layer to expose at least a stripping pattern layer on a first circuit area of the circuit substrate; and etching the stripping pattern layer by using a stripping liquid to expose the first circuit area of the circuit substrate. The method can reduce the equipment cost for manufacturing the protective film layer on the circuit substrate.
Description
Technical Field
The present invention relates to a method for protecting a circuit substrate, and more particularly, to a method for forming a protective film on a circuit substrate.
Background
With the maturity of touch display technology, the competition among manufacturers is more and more intense, and the manufacturing cost of the product becomes a crucial competitive power.
A circuit substrate is often required in a touch display product, the circuit substrate is provided with a functional circuit layer, and the touch display product realizes a touch function, a display function, a touch display function or the like through the functional circuit layer. In the prior art, a protection film layer is formed on a surface of a circuit functional layer of the circuit substrate to protect the circuit functional layer, the common protection film layer is an OCA optical adhesive, but the OCA optical adhesive is not resistant to high temperature, and some processes (such as AMOLED processes) of a product need to be performed at a high temperature of 400-. And some circuit areas in the circuit function layer need to be exposed from the protective film layer to bind with an FPC, an IC and the like, so the high-temperature resistant protective film layer needs to be etched to expose the circuit areas, but the high-temperature resistant protective film layer can only be etched by adopting a yellow light process, and yellow light equipment used by the yellow light process is expensive and cannot be bought by a general company, so that the equipment cost is very high.
Disclosure of Invention
In order to overcome the above-mentioned deficiencies of the prior art, the present invention provides a method for fabricating a protective film on a circuit substrate, which can reduce the equipment cost for fabricating the protective film on the circuit substrate.
The technical problem to be solved by the invention is realized by the following technical scheme:
a method of making a protective film layer on a circuit substrate, comprising:
manufacturing a stripping pattern layer on a circuit surface of a circuit substrate, wherein the stripping pattern layer covers a first circuit area of the circuit substrate and exposes a second circuit area of the circuit substrate;
manufacturing a protective film layer on the circuit surface of the circuit substrate, wherein the protective film layer covers a second circuit area of the circuit substrate and a stripping pattern layer positioned on the first circuit area, and a first bonding force between the protective film layer and the circuit substrate is greater than a second bonding force between the protective film layer and the stripping pattern layer;
wiping the protective film layer to expose at least a stripping pattern layer on a first circuit area of the circuit substrate;
and etching the stripping pattern layer by using a stripping liquid to expose the first circuit area of the circuit substrate.
Further, the step of forming the lift-off pattern layer on the circuit surface of the circuit substrate by using a photoresist material comprises:
manufacturing a stripping film layer on the circuit surface of the circuit substrate, wherein the stripping film layer covers a first circuit area and a second circuit area of the circuit substrate at the same time;
and after exposure and development are carried out on the stripping film layer, the stripping film layer positioned on the second circuit area is removed, the stripping film layer positioned on the first circuit area is left, and the stripping pattern layer is formed.
Further, the stripping pattern layer is made of positive photoresist, the stripping film layer on the second circuit area is exposed, and then the exposed stripping film layer on the second circuit area is etched away by using a developing solution.
Further, the stripping pattern layer is made of negative photoresist material, the stripping film layer on the first circuit area is exposed, and then the unexposed stripping film layer on the second circuit area is etched away by using a developing solution.
Further, the stripping solution is an alkaline solution.
Further, the circuit substrate comprises a transparent substrate and a functional circuit layer manufactured on one side of the transparent substrate.
Further, the functional circuit layer includes a first circuit region that needs to be exposed from the protective film layer and a second circuit region that needs to be protected by being covered under the protective film layer.
Further, the protective film layer is a high-temperature resistant protective film layer.
Further, the protective film layer is an inorganic non-metallic compound film layer.
Further, the stripping liquid can corrode the stripping pattern layer, but cannot corrode the protective film layer.
The invention has the following beneficial effects: when the protective film layer is manufactured on the circuit substrate, the protective film layer on the stripping pattern layer is wiped off by wiping the protective film layer and utilizing the characteristic that the circuit substrate and the stripping pattern layer respectively have different binding forces to the protective film layer, the protective film layer is not required to be etched through a yellow light process, the stripping pattern layer is manufactured only by adopting a common photoetching process, common photoetching equipment is very cheap, and equipment cost can be reduced.
Drawings
FIG. 1 is a block diagram of the steps of a method for forming a protective film on a circuit substrate according to the present invention;
FIG. 2 is a schematic diagram of a protective film layer formed on a circuit substrate according to the present invention;
FIG. 3 is another schematic diagram of the present invention for forming a protective film on a circuit substrate;
FIG. 4 is a schematic diagram of a protective film layer formed on a circuit substrate according to the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and examples.
As shown in fig. 1 to 4, a method of producing a protective film layer 3 on a circuit substrate 1, comprising:
s101: manufacturing a stripping pattern layer 2 on a circuit surface of a circuit substrate 1, wherein the stripping pattern layer 2 covers a first circuit area 11 of the circuit substrate 1 and exposes a second circuit area 12 of the circuit substrate 1;
the circuit substrate 1 includes a transparent substrate and a functional circuit layer formed on one side of the transparent substrate, where the functional circuit layer may be a touch circuit layer with a touch function, a display circuit layer with a display function, or a touch display circuit layer with both touch and display functions, and the functional type of the functional circuit layer is not limited herein. Wherein the first circuit region 11 of the functional circuit layer is a circuit region which is required to be exposed from the protective film layer 3 for bonding the FPC and the IC, and the second circuit region 12 of the functional circuit layer is a circuit region which is required to be covered under the protective film layer 3 for protection.
The transparent substrate can be a plastic substrate, a glass substrate or a sapphire substrate and other conventional material substrates; the functional circuit layer can be an ITO circuit layer, a nano-silver circuit layer or a graphene circuit layer and other conventional material circuit layers.
Specifically, the step of manufacturing the stripping pattern layer 2 on the circuit surface of the circuit substrate 1 by using the stripping pattern layer 2 as a photoresist material includes:
manufacturing a stripping film layer on the circuit surface of the circuit substrate 1, wherein the stripping film layer covers a first circuit area 11 and a second circuit area 12 of the circuit substrate 1 at the same time;
and after exposing and developing the stripping film layer, removing the stripping film layer on the second circuit area 12, and leaving the stripping film layer on the first circuit area 11 to form the stripping pattern layer 2.
In the process of exposure and development, circuit areas exposed and developed according to different photoresist materials are also different, if the stripping pattern layer 2 is a positive photoresist material, the stripping film layer on the second circuit area 12 is exposed, and then the exposed stripping film layer on the second circuit area 12 is etched away by using a developing solution; if the stripping pattern layer 2 is a negative photoresist material, the stripping film layer on the first circuit region 11 is exposed, and then the unexposed stripping film layer on the second circuit region 12 is etched away by using a developing solution.
S102: manufacturing a protective film layer 3 on the circuit surface of the circuit substrate 1, as shown in fig. 2, wherein the protective film layer 3 covers a second circuit region 12 of the circuit substrate 1 and a peeling pattern layer 2 on the first circuit region 11, and a first bonding force between the protective film layer 3 and the circuit substrate 1 is greater than a second bonding force between the protective film layer 3 and the peeling pattern layer 2;
the protective film layer 3 is preferably a high temperature resistant protective film layer 3, and the material of the protective film layer may be an inorganic non-metallic compound film layer such as SIO2 or SI3N 4.
S103: wiping the protective film layer 3 to expose at least the lift-off pattern layer 2 on the first circuit region 11 of the circuit substrate 1 as shown in fig. 3;
since the first bonding force of the circuit substrate 1 to the protective film layer 3 is greater than the second bonding force of the peel pattern layer 2 to the protective film layer 3, by controlling the wiping force of the protective film layer 3 so that the wiping force is between the first bonding force and the second bonding force, the protective film layer 3 on the peel pattern layer 3 is wiped off, and the protective film layer 3 on the second circuit region 12 of the circuit substrate 1 is not wiped off; after the wiping, at least the peeling pattern layer 2 on the first circuit region 11 of the circuit substrate 1 should be exposed to facilitate the etching in the next step S104, but it is also possible to completely remove the protective film layer 3 on the peeling pattern layer 2 and leave only the protective film layer 3 on the second circuit region 12 of the circuit substrate 1.
When wiping the protective film layer 3, a dust-free cloth may be used, but not limited thereto.
S104: etching away the lift-off pattern layer 2 with a lift-off liquid, as shown in fig. 4, to expose a first circuit region 11 of the circuit substrate 1;
the lift-off pattern layer 2 is etched by selecting an appropriate lift-off liquid that should be able to etch only the lift-off pattern layer 2, but not the protective film layer 3. Since the high temperature resistant protective film 3 made of inorganic nonmetallic compound films such as SIO2 or SI3N4 is generally corroded only by acidic solution and not by alkaline solution, and the photoresist material for making the stripping pattern layer 2 is just corroded by alkaline solution, the stripping solution is preferably alkaline solution.
When the protective film layer 3 is manufactured on the circuit substrate 1, the protective film layer 3 on the stripping pattern layer 2 is wiped off by wiping the protective film layer 3 and utilizing the characteristics that the circuit substrate 1 and the stripping pattern layer 2 have different binding forces on the protective film layer 3 respectively, the protective film layer 3 does not need to be etched through a yellow light process, the manufacturing of the stripping pattern layer 2 only needs to adopt a common photoetching process, common photoetching equipment is very cheap, and equipment cost can be reduced.
The above-mentioned embodiments only express the embodiments of the present invention, and the description is more specific and detailed, but not understood as the limitation of the patent scope of the present invention, but all the technical solutions obtained by using the equivalent substitution or the equivalent transformation should fall within the protection scope of the present invention.
Claims (9)
1. A method of forming a protective film on a circuit substrate, comprising:
manufacturing a stripping pattern layer on a circuit surface of a circuit substrate, wherein the stripping pattern layer covers a first circuit area of the circuit substrate and exposes a second circuit area of the circuit substrate;
manufacturing a protective film layer on the circuit surface of the circuit substrate, wherein the protective film layer covers a second circuit area of the circuit substrate and a stripping pattern layer positioned on the first circuit area, and a first bonding force between the protective film layer and the circuit substrate is greater than a second bonding force between the protective film layer and the stripping pattern layer;
wiping the protective film layer to expose at least a stripping pattern layer on a first circuit area of the circuit substrate;
and etching the stripping pattern layer by using a stripping liquid to expose the first circuit area of the circuit substrate, wherein the stripping liquid can etch the stripping pattern layer but cannot etch the protective film layer.
2. The method as claimed in claim 1, wherein the step of forming the lift-off pattern layer on the circuit surface of the circuit substrate comprises:
manufacturing a stripping film layer on the circuit surface of the circuit substrate, wherein the stripping film layer covers a first circuit area and a second circuit area of the circuit substrate at the same time;
and after exposure and development are carried out on the stripping film layer, the stripping film layer positioned on the second circuit area is removed, the stripping film layer positioned on the first circuit area is left, and the stripping pattern layer is formed.
3. A method of forming a protective film over a circuit substrate as claimed in claim 2, wherein the lift-off pattern layer is a positive photoresist, the lift-off film over the second circuit regions is exposed, and the exposed lift-off film over the second circuit regions is then etched away with a developer.
4. A method of forming a protective film over a circuit substrate as claimed in claim 2, wherein said lift-off pattern layer is a negative photoresist, exposing said lift-off film over said first circuit region, and then etching away the unexposed lift-off film over said second circuit region with a developer.
5. A method for forming a protective film on a circuit substrate according to any one of claims 2 to 4, wherein the stripping liquid is an alkaline solution.
6. The method of claim 1, wherein the circuit substrate comprises a transparent substrate and a functional circuit layer formed on one side of the transparent substrate.
7. The method of claim 6, wherein the functional circuit layer comprises a first circuit region exposed from the protective film layer and a second circuit region covered under the protective film layer.
8. The method of claim 1, wherein the protective film is a high temperature resistant protective film.
9. A method for forming a protective film on a circuit substrate as claimed in claim 1 or 8, wherein the protective film is an inorganic non-metallic compound film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910344465.1A CN110149765B (en) | 2019-04-26 | 2019-04-26 | Method for manufacturing protective film on circuit substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910344465.1A CN110149765B (en) | 2019-04-26 | 2019-04-26 | Method for manufacturing protective film on circuit substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110149765A CN110149765A (en) | 2019-08-20 |
| CN110149765B true CN110149765B (en) | 2020-06-05 |
Family
ID=67594645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910344465.1A Active CN110149765B (en) | 2019-04-26 | 2019-04-26 | Method for manufacturing protective film on circuit substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110149765B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1233078A (en) * | 1998-02-28 | 1999-10-27 | Lg电子株式会社 | Thermocouple detector and method of manufacturing the same |
| CN103309539A (en) * | 2013-06-20 | 2013-09-18 | 深圳南玻伟光导电膜有限公司 | Capacitive touch screen provided with in OGS structure and fabrication method of capacitive touch screen |
| CN104716029A (en) * | 2013-12-12 | 2015-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
| CN106909251A (en) * | 2017-03-02 | 2017-06-30 | 合肥鑫晟光电科技有限公司 | The preparation method of touch-screen, touch-screen and display device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6080437B2 (en) * | 2011-09-30 | 2017-02-15 | キヤノン株式会社 | Manufacturing method of organic light emitting device |
-
2019
- 2019-04-26 CN CN201910344465.1A patent/CN110149765B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1233078A (en) * | 1998-02-28 | 1999-10-27 | Lg电子株式会社 | Thermocouple detector and method of manufacturing the same |
| CN103309539A (en) * | 2013-06-20 | 2013-09-18 | 深圳南玻伟光导电膜有限公司 | Capacitive touch screen provided with in OGS structure and fabrication method of capacitive touch screen |
| CN104716029A (en) * | 2013-12-12 | 2015-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
| CN106909251A (en) * | 2017-03-02 | 2017-06-30 | 合肥鑫晟光电科技有限公司 | The preparation method of touch-screen, touch-screen and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110149765A (en) | 2019-08-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8414783B2 (en) | Method of forming double-sided patterns in a touch panel circuit | |
| TWI692801B (en) | Double-sided electrode and pattern process thereof | |
| US20090246704A1 (en) | Manufacturing Method for Conducting Films on Two Surfaces of Transparent Substrate of Touch Control Circuit | |
| CN104536614A (en) | Graphene sensor, manufacturing method thereof and touch display device | |
| US7772050B2 (en) | Method of manufacturing flat panel display | |
| CN109003944A (en) | A kind of production method and substrate, display device of substrate | |
| US8703514B2 (en) | Active array substrate and method for manufacturing the same | |
| TWI449479B (en) | Method for manufacturing circuit | |
| CN102880370A (en) | Touch inductor for capacitive touch screen with film structure and manufacturing method thereof | |
| KR20140096863A (en) | method for forming graphene pattern | |
| US10739930B2 (en) | Mask plate, display substrate, method for manufacturing display substrate, and display device | |
| CN110149765B (en) | Method for manufacturing protective film on circuit substrate | |
| US10871843B2 (en) | Bonding area structure, method of manufacturing the same, panel and touch display device | |
| JP2011129272A (en) | Double-sided transparent conductive film sheet and method of manufacturing the same | |
| JP2008083495A (en) | Manufacturing method for substrate | |
| CN110167280B (en) | Method for manufacturing protective film on circuit substrate | |
| CN109148271B (en) | Preparation method of display substrate, display substrate and display screen | |
| EP1168376A4 (en) | Method for forming transparent conductive film by using chemically amplified resist | |
| WO2019047574A1 (en) | Array substrate and manufacturing method therefor and display device | |
| TWI732530B (en) | Method of forming wiring on side surface of substrate | |
| CN101770161B (en) | Method for manufacturing phase shift mask plate and structure thereof | |
| US10297449B2 (en) | Method for manufacturing thin film transistor, method for manufacturing array substrate, array substrate and display device | |
| JP2006202961A (en) | Processing method using printing pattern and printing pattern forming apparatus | |
| WO2022000478A1 (en) | Circuit board manufacturing method and circuit board | |
| CN108776423B (en) | Manufacturing method and device of touch layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |