CN110147578A - The life-span prediction method of IGBT device based on semi-physical emulation platform - Google Patents
The life-span prediction method of IGBT device based on semi-physical emulation platform Download PDFInfo
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Abstract
The invention belongs to rail transit power technical field of electronic devices, more particularly to the life-span prediction method of the IGBT device based on semi-physical emulation platform, include the following steps: to obtain the electrical parameter of IGBT device by semi-physical emulation platform using the true TCU of locomotive/motor-car；The loss value of IGBT device is calculated according to the electrical parameter；Using electric heating network model, the investing temperature change curve of IGBT device is obtained according to the loss value；Rain-flow counting statistics is carried out according to investing temperature load of the rain flow algorithm to IGBT device；The service life of IGBT device is calculated using the damage accumulation model of IGBT device.The life-span prediction method, it is provided using the true TCU of motor-car/locomotive closer to the electric current under actual condition, voltage change, it is equivalent to the accuracy of collection in worksite data, for the replacing construction for determining rail traffic IGBT device, realizes that the whole-life cycle fee of IGBT device provides theoretical foundation.
Description
Technical field
The invention belongs to rail transit power technical field of electronic devices, are related to the life-span prediction method of IGBT device,
More particularly to the life-span prediction method of the IGBT device based on semi-physical emulation platform.
Background technique
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, abbreviation IGBT) is used as function
Rate switching device, many advantages that have that current carrying density is big, saturation voltage drop is low etc., rail traffic, smart grid, Industry Control,
The fields such as electric car are widely used.IGBT device working environment is severe, as current strength is big, voltage class is high, work during
Switching frequency is very high, these are all easy to cause device fatigue aging, brings hidden danger to the reliability of device.By studying for a long period of time
And working experience, about 55% failure cause are to lead to device because voltage, electric current, switching frequency when device works are higher
The junction temperature of part increases；And junction temperature raising will accelerate the aging of device, and when junction temperature reaches certain height, the degree of fatigue of device
Geometric progression ascendant trend can be presented, so as to cause component failure.The mechanical stress failure of IGBT device is due to device layers
The thermal expansion coefficient of material has differences, and causes different materials that will bear different degrees of thermal stress, leads to device after long-term accumulated
Part thermal fatigue failure eventually leads to device overheating failure.
Currently, some main power semiconductor companies develop power consumption and junction temperature simulation softward based on module, such as
Infineon IPOSIM, plug rice control SEMISEL, Mitsubishi MELCOSIM and Fuji's simulation softward etc., it is intended to user be helped to design
System power dissipation and maximum junction temperature are understood in journey, are optimized cooling system, are selected most suitable device.However, temperature-time course is
Complicated and change at random, real time monitoring is difficult larger, the above software can not complete the emulation that operating condition changes lower variations injunction temperature.
Therefore, the emulation of the related softwares such as Matlab/Simulink, PLECS is gradually begun to use to be used under different operating conditions, current transformer
It is extracted in rectification, inversion operating mode IGBT device junction temperature/shell temperature.There is part researcher to pass through collection site IGBT device
Voltage, current data for investing temperature extract.
However, the IGBT investing temperature and truthful data that are obtained using power consumption and junction temperature the simulation softward emulation of module are existed
Different, accuracy be not high.Real-time live data are acquired, carry out IGBT junction temperature by Matlab/Simulink electrothermic model
It calculates in real time, this scheme needs collection in worksite locomotive real time data, and practical degree is not high, and input cost is higher.
Summary of the invention
It is an object of the invention to overcome the above-mentioned prior art, provide a kind of based on semi-physical emulation platform
The life-span prediction method of IGBT device realizes week IGBT device life-cycle to determine rail traffic IGBT device replacing construction
Period management provides theoretical foundation.
To achieve the above object, the present invention provides the following technical scheme that
The life-span prediction method of this IGBT device based on semi-physical emulation platform, specifically comprises the following steps:
1) the true TCU of locomotive/motor-car is utilized, the electrical parameter of IGBT device is obtained by semi-physical emulation platform；
2) the power loss value of IGBT device is calculated according to the electrical parameter；
3) electric heating network model is utilized, the investing temperature change curve of IGBT device is obtained according to the loss value；
4) rain-flow counting statistics is carried out according to investing temperature load of the rain flow algorithm to IGBT device；
5) service life of IGBT device is calculated using the damage accumulation model of IGBT device.
Further, the step 1) utilizes the true TCU of locomotive/motor-car, obtains IGBT device by semi-physical emulation platform
The electrical parameter of part, specifically comprises the following steps:
1.1) utilize the true TCU of locomotive/motor-car, by semi-physical emulation platform complete locomotive " starting-acceleration-at the uniform velocity-system
It is dynamic " entirely operating condition emulation；
1.2) it is completed using high-resolution oscillograph to the IGBT device of four-quadrant power module, inverted power module
The data of electrical parameter acquire.
Further, the step 1.1) utilizes the true TCU of locomotive/motor-car, completes locomotive by semi-physical emulation platform
" starting-acceleration-at the uniform velocity-braking " entire operating condition emulation, specifically comprises the following steps:
1.1.1 semi-physical emulation platform is connect with the true TCU of motor-car), carries out real-time simulation test；
1.1.2 it) by semi-physical emulation platform simulated locomotive work operating condition, carries out traction state and on-position is imitative
Very；
1.1.3 it) is configured according to locomotive load power consumption, the load of four-quadrant module includes traction electric machine and auxiliary power mould
Block, inverter module load only include traction electric machine, complete " starting-acceleration-at the uniform velocity-braking " entire operating condition emulation.
Further, the step 1.2) is completed using high-resolution oscillograph to four-quadrant power module/inversion function
The data of the electrical parameter of the IGBT device of rate module acquire, and specifically comprise the following steps:
1.2.1 four-quadrant pulse signal, four) are respectively completed using high-resolution oscillograph in half operational process in kind
Quadrant input current, four-quadrant IGBT electric current, inversion IGBT pulse, inverter current, DC bus-bar voltage, inversion IGBT electric current,
The acquisition of motor speed totally eight road signals；
1.2.2 it) reads the waveform of collected eight road signal and converts thereof into excel tables of data.
Further, the power loss value of the IGBT device in the step 2) includes the power damage of IGBT and FRD chip
Consumption, steps are as follows for specific calculating:
2.1) conduction loss of IGBT device is calculated using the average loss method based on the switching frequency period: in electric current negative half
Week, IGBT shutdown, FRD work, it is assumed that in negative half-cycle, there is N number of switching pulse period (wave head number), each pulse period
Inside there is k calculating point, the conduction loss superposition of each pulse period can be obtained:
In formula (1), Pcond_TrFor the average conduction loss of igbt chip, Vcesat(Tj,IC(tj)) it is to export week i-th of IGBT
Saturation voltage drop in phase when j-th of sampled point conducting, ICFor j-th of sampled point current value；In formula (2), Pcond_DFor FRD chip
Average conduction loss, VF(Tk,ID(tk)) it is s-th of the FRD chip saturation pressure exported when k-th of sampled point is connected in the period
Drop, IDFor j-th of sampled point current value；
2.2) switching loss of IGBT device is calculated using formula (3), (4), wherein
In formula (3), Psw,TrFor the switching loss of igbt chip, EonEnergy, E are opened for IGBToffEnergy is turned off for IGBT,
ic(i-1)For the current value at i-1 moment, ic(i)For the current value at i moment, VdcFor input voltage value, VnomFor nominal voltage；Formula
(4) in, Psw,DFor the switching loss of FRD chip, Erec,sEnergy is turned off for FRD chip；
2.3) IGBT total losses, FRD total losses in switch periods are calculated using formula (5) and (6)；
PIGBT=Pcond_Tr+Psw_Tr (5)
PDiode=Pcond_D+Psw_D (6)
2.4) the total losses value of IGBT device in switch periods is calculated using formula (7).
PAlways=PDiode+PIGBT (7)
Further, the step 3) utilizes electric heating network model, and the crust of IGBT device is obtained according to the loss value
Temperature variation curve specifically comprises the following steps:
3.1) shutdown curve is opened according to the IGBT provided in IGBT device specifications and is converted into device parameters database；
3.2) the loss calculation model based on mathematical method is utilized, " look-up table " is utilized to calculate real-time voltage, current data
Corresponding real-time loss；
3.3) using the calculation method of continuous work loss and instantaneous junction temperature, Modeling Calculation is carried out using Matlab and is obtained
Actual junction temperature and shell temperature change IGBT device during the work time.
Further, the electric heating network model is the RC ther mal network model based on Foster and Cauer.
Further, the step 4) carries out rain-flow counting statistics according to investing temperature of the rain flow algorithm to IGBT device,
Specifically comprise the following steps:
4.1) temperature fluctuation occurred in investing temperature change curve is divided into the temperature width rank Δ of several equal difference
T；
4.2) corresponding cycle-index num and mean temperature T in each temperature change width rank is countedm；
4.3) statistical result of temperature loading variation is calculated.
Further, in the step 4.3), the statistical result of the temperature loading variation includes temperature change amplitude, number
Amount, mean temperature and investing temperature loading spectrum.
Further, the step 5) calculates the service life of IGBT device using the damage accumulation model of IGBT device, specifically
Include the following steps:
5.1) the investing temperature loading spectrum being calculated in step 4.3) is substituted into and obtains not equality of temperature in formula (8) and (9)
Spend the power cycle number and temperature cycle times under load；
In formula (8), (9), Nf,jFor power cycle number under junction temperature surging condition, Nf,cIt is followed for temperature under shell temperature surging condition
Ring number, A, B, α, β are the constant of data fitting, and K is Boltzmann constant, K=1.380 × 10-23J/K, Δ TjFor junction temperature change
Change, Δ TcFor the variation of shell temperature, EaFor the excitation energy of silicon chip, Ea=9.89 × 10-20J, TjmFor average junction temperature, TcmFor average shell
Temperature；
5.2) number, the daily as caused by daily environment temperature introduced in ABB service life handbook are consumed according to station station PC
Influence of the cycles to the service life calculates PC life damage rate using life damage formula (10)-(12)；
In formula (10), NPC,stationFor PC cycle-index in the circulation of station station, DPC,stationFor junction temperature fluctuation damage in the circulation of station station
Hurt rate；
In formula (11), NPC,dailyFor PC cycle-index in day circulation, DPC,dailyDamage ratio is fluctuated for junction temperature in day circulation,For average junction temperature, TaFor environment temperature；
DPC=DPc,station+DPc,daily (12)
In formula (12), DPCFor the damage ratio as caused by junction temperature load change；
5.3) according to station station TC consumption number, according to being introduced in ABB service life handbook as caused by daily environment temperature
Influence of the daily cycles to the service life calculates TC life damage rate using life damage formula (13)-(15), wherein
In formula (13), NTC,stationFor TC cycle-index in the circulation of station station, DTC,stationFor shell temperature fluctuation damage in the circulation of station station
Hurt rate；
In formula (14), NTC,dailyFor TC cycle-index in day circulation, DTC,dailyDamage ratio is fluctuated for shell temperature in day circulation,For average shell temperature, TaFor environment temperature；
DTc=DTc,station+DTc,daily (15)
In formula (15), DTCFor the damage ratio as caused by shell temperature load change；
5.4) total damage ratio D of IGBT device is calculated；
In formula (16), daily cycle is day cycle-index, and station cycle is station station cycle-index, D IGBT
Total damage ratio, NPC,stationFor PC cycle-index in the circulation of station station, NPC,dailyFor PC cycle-index in day circulation, NTC,stationFor
TC cycle-index in the circulation of station, NTC,dailyFor TC cycle-index in day circulation；
5.5) service life of IGBT device is calculated.
The IGBT service life=1/D (17)
Compared with prior art, technical solution provided by the invention includes following the utility model has the advantages that true using motor-car/locomotive
TCU obtains the electrical parameters such as electric current, voltage, the trigger pulse of IGBT device by semi-physical emulation platform, provides closer
Electric current, voltage change under actual condition, are equivalent to the accuracy of collection in worksite data；Utilize MATLAB program calculation IGBT
The loss value of device simultaneously obtains investing temperature change curve by building electric heating network model；Rain flow algorithm is introduced to investing temperature
Load carries out rain-flow counting statistics, and IGBT device damage accumulation model is recycled to calculate the service life of IGBT device, completes track
The traffic analytical Calculation in IGBT device service life.The life-span prediction method, for determine rail traffic IGBT device replacement when
Between, realize that the whole-life cycle fee of IGBT device provides theoretical foundation.
Detailed description of the invention
Fig. 1 is the process of the life-span prediction method of the rail traffic IGBT device provided by the invention based on emulation platform
Schematic diagram；
Fig. 2 is that HWIL simulation provided by the invention acquires waveform diagram；
Fig. 3 is opening in an output frequency period in the average loss method provided by the invention based on the switching frequency period
Guan pulse rushes periodic waveform figure；
Fig. 4 is the electrothermic model schematic diagram of IGBT device provided by the invention；
Fig. 5 is new eight axis locomotive HWIL simulation waveform diagram provided by the invention；
Fig. 6 (a), Fig. 6 (b) are respectively junction temperature load change figure, the shell temperature that rain flow algorithm provided by the invention is handled
Load change figure.
Specific embodiment
Example embodiments are described in detail here, and the example is illustrated in the accompanying drawings.Following description is related to
When attached drawing, unless otherwise indicated, the same numbers in different drawings indicate the same or similar elements.Following exemplary embodiment
Described in embodiment do not represent all embodiments consistented with the present invention.On the contrary, they are only and appended power
The example of method be described in detail in sharp claim, that some aspects of the invention are consistent.
In order to make those skilled in the art more fully understand technical solution of the present invention, with reference to the accompanying drawings and embodiments
Present invention is further described in detail.
Embodiment 1
Shown in Figure 1, the present invention provides a kind of life prediction sides of IGBT device based on semi-physical emulation platform
Method specifically comprises the following steps:
1) the true TCU of locomotive/motor-car is utilized, the electrical parameter of IGBT device is obtained by semi-physical emulation platform；
2) loss value of IGBT device is calculated according to the electrical parameter；
3) electric heating network model is utilized, the investing temperature change curve of IGBT device is obtained according to the loss value；
4) rain-flow counting statistics is carried out according to investing temperature load of the rain flow algorithm to IGBT device；
5) service life of IGBT device is calculated using the damage accumulation model of IGBT device.
Further, step 1) utilizes the true TCU of locomotive/motor-car, obtains IGBT device by semi-physical emulation platform
Electrical parameter, HWIL simulation as shown in connection with fig. 2 acquire waveform diagram, specifically comprise the following steps:
1.1) utilize the true TCU of locomotive/motor-car, by semi-physical emulation platform complete locomotive " starting-acceleration-at the uniform velocity-system
It is dynamic " entirely operating condition emulation, specifically comprise the following steps:
1.1.1 semi-physical emulation platform is connect with the true TCU of motor-car), carries out real-time simulation test；
1.1.2 it) by semi-physical emulation platform simulated locomotive work operating condition, carries out traction state and on-position is imitative
Very；
1.1.3 it) is configured according to locomotive load power consumption, the load of four-quadrant module includes traction electric machine and auxiliary power mould
Block, inverter module load only include traction electric machine, complete " starting-acceleration-at the uniform velocity-braking " entire operating condition emulation；
1.2) it is completed using high-resolution oscillograph to the IGBT device of four-quadrant power module, inverted power module
The data of electrical parameter acquire, and specifically comprise the following steps:
1.2.1 four-quadrant pulse signal, four) are respectively completed using high-resolution oscillograph in half operational process in kind
Quadrant input current, four-quadrant IGBT electric current, inversion IGBT pulse, inverter current, DC bus-bar voltage, inversion IGBT electric current,
The acquisition of motor speed totally eight road signals；
1.2.2 the waveform of collected eight road signal) is read using Xviewer software and converts thereof into excel data
Table.
Further, the electrical parameter in step 1.2) includes the numerical value such as electric current, voltage, trigger pulse, motor speed letter
Breath.
Wherein, semi-physical emulation platform simulates controlled device with mathematical model, connect with true controller (TCU),
Carry out real-time emulation testing.Trailer system semi-physical emulation platform is moved by the identical traction cabinet of four groups of configurations and one group
Mechanics cabinet composition.Traction cabinet includes that HiGale replicating machine/adaptive box/conditioning case/photoelectric conversion case and high-speed data are adopted
Header etc., main control operation bow net is by the real-time simulation of electricity/major loops such as transformer/rectifier/inverter and traction electric machine
Model.
Further, the loss value of the IGBT device in step 2) passes through based on the average loss method in switching frequency period
It obtains, schematic diagram specifically comprises the following steps: referring to Fig. 3
2.1) conduction loss of IGBT device is calculated using the average loss method based on the switching frequency period: in electric current negative half
Week, IGBT shutdown, FRD work, it is assumed that in negative half-cycle, there is N number of switching pulse period (wave head number), each pulse period
Inside there is k calculating point, the conduction loss superposition of each pulse period can be obtained:
In formula (1), Pcond_TrFor the average conduction loss of igbt chip, Vcesat(Tj,IC(tj)) it is to export week i-th of IGBT
Saturation voltage drop in phase when j-th of sampled point conducting, ICFor j-th of sampled point current value；In formula (2), Pcond_DFor FRD chip
Average conduction loss, VF(Tk,ID(tk)) it is s-th of the FRD chip saturation pressure exported when k-th of sampled point is connected in the period
Drop, IDFor j-th of sampled point current value；
2.2) switching loss of IGBT device is calculated using formula (3), (4), wherein
In formula (3), Psw,TrFor the switching loss of igbt chip, EonEnergy, E are opened for IGBToffEnergy is turned off for IGBT,
ic(i-1)For the current value at i-1 moment, ic(i)For the current value at i moment, VdcFor input voltage value, VnomFor nominal voltage；Formula
(4) in, Psw,DFor the switching loss of FRD chip, Erec,sEnergy is turned off for FRD chip；
2.3) IGBT total losses, FRD total losses in switch periods are calculated using formula (5) and (6)；
PIGBT=Pcond_Tr+Psw_Tr (5)
PDiode=Pcond_D+Psw_D (6)
2.4) the total losses value of IGBT device in switch periods is calculated using formula (7).
PAlways=PDiode+PIGBT (7)
Further, step 3) utilizes electric heating network model, and the investing temperature of IGBT device is obtained according to the loss value
Change curve specifically comprises the following steps:
3.1) shutdown curve is opened according to the IGBT provided in IGBT device specifications and is converted into device parameters database；
3.2) the loss calculation model based on mathematical method is utilized, " look-up table " is utilized to calculate real-time voltage, current data
Corresponding real-time loss；
3.3) using the calculation method of continuous work loss and instantaneous junction temperature, Modeling Calculation is carried out using Matlab and is obtained
Actual junction temperature and shell temperature change IGBT device during the work time.
Further, electric heating network model is the RC ther mal network model based on Foster and Cauer, it is to IGBT device
The concentration of practical diabatic process is equivalent, and is easy to be realized in simulation software with the form of circuit network, is commonly used in engineering
IGBT device junction temperature calculation method.Foster model is made of the RC circuit in series that thermal resistance R and thermal capacitance C are composed in parallel, water cooling
Radiator heat-dissipation uses the RC ther mal network model (being made of thermal resistance R and thermal capacitance C) of the Cauer based on actual physical layer.Pass through one
Power consumption data is input to device Foster ther mal network model, then is transmitted to radiator Cauer ther mal network mould by a controllable current source
Type, the voltage of output can analogize to the temperature of output, temperature reference point be water inlet temperature therefore, using Matlab
Simulink software has built the automobile-used IGBT device electrothermic model of five types to realize that electric heating associative simulation, model are as shown in Figure 4.
Further, step 4) carries out rain-flow counting statistics according to investing temperature of the rain flow algorithm to IGBT device, specifically
Include the following steps:
4.1) temperature fluctuation occurred in investing temperature change curve is divided into the temperature width rank Δ of several equal difference
T；
4.2) corresponding cycle-index num and mean temperature T in each temperature change width rank is countedm；
4.3) statistical result of temperature loading variation is calculated；Wherein, the statistical result packet of the temperature loading variation
Include temperature change amplitude, quantity, mean temperature and investing temperature loading spectrum.
Further, step 5) calculates the service life of IGBT device using the damage accumulation model of IGBT device, specifically includes
Following steps:
5.1) the investing temperature loading spectrum being calculated in step 4.3) is substituted into and obtains not equality of temperature in formula (8) and (9)
Spend the power cycle number and temperature cycle times under load；
In formula (8), (9), Nf,jFor power cycle number under junction temperature surging condition, Nf,cIt is followed for temperature under shell temperature surging condition
Ring number, A, B, α, β are the constant of data fitting, and K is Boltzmann constant, K=1.380 × 10-23J/K, Δ TjFor junction temperature change
Change, Δ TcFor the variation of shell temperature, EaFor the excitation energy of silicon chip, Ea=9.89 × 10-20J, TjmFor average junction temperature, TcmFor average shell
Temperature；
5.2) number, the daily as caused by daily environment temperature introduced in ABB service life handbook are consumed according to station station PC
Influence of the cycles to the service life calculates PC life damage rate using life damage formula (10)-(12)；
In formula (10), NPC,stationFor PC cycle-index in the circulation of station station, DPC,stationFor junction temperature fluctuation damage in the circulation of station station
Hurt rate；
In formula (11), NPC,dailyFor PC cycle-index in day circulation, DPC,dailyDamage ratio is fluctuated for junction temperature in day circulation,For average junction temperature, TaFor environment temperature；
DPC=DPc,station+DPc,daily (12)
5.3) according to station station TC consumption number, according to being introduced in ABB service life handbook as caused by daily environment temperature
Influence of the daily cycles to the service life calculates TC life damage rate using life damage formula (13)-(15), wherein
In formula (13), NTC,stationFor TC cycle-index in the circulation of station station, DTC,stationFor shell temperature fluctuation in the circulation of station station
Damage ratio；
In formula (14), NTC,dailyFor TC cycle-index in day circulation, DTC,dailyDamage ratio is fluctuated for shell temperature in day circulation,For average shell temperature, TaFor environment temperature；
DTc=DTc,station+DTc,daily (15)
5.4) total damage ratio D of IGBT device is calculated；
In formula (16), daily cycle is day cycle-index, and station cycle is station station cycle-index, D IGBT
Total damage ratio, NPC,stationFor PC cycle-index in the circulation of station station, NPC,dailyFor PC cycle-index in day circulation, NTC,stationFor
TC cycle-index in the circulation of station, NTC,dailyFor TC cycle-index in day circulation；
5.5) service life of IGBT device is calculated.
The IGBT service life=1/D (17)
Embodiment 2
On the basis of embodiment 1, company, Infineon life prediction schemes synthesis considers Δ Tj(variations injunction temperature), Δ Tc
The influence of (variation of shell temperature) and devices switch frequency to the service life.Using the power cycle of Weibull failure formulat calculator part
Service life/thermal cycle life, last comprehensive power cycle life and thermal cycle life obtain the terminal life predicted value of device.
Illustrate by taking new eight axis locomotive as an example, HWIL simulation obtains shown in task curve graph 5, temperature loading after rain-flow counting
Change (temperature change amplitude, quantity, mean temperature) as shown in fig. 6, Fig. 6 (a) is junction temperature load change figure after rain stream process, figure
6 (b) be rain stream process rear shell temperature load change figure:
Wherein, CH1: four-quadrant U phase upper tube pulse；CH2: four-quadrant Uab voltage；CH3: four-quadrant U phase upper tube IGBT electricity
Stream；CH4: inverter U phase upper tube pulse；CH5: motor speed；CH6: inverter U phase upper tube IGBT electric current.
Using linear damage accumulation theory, according to the life and reliability handbook in the IGBT module application of Infineon's publication
Middle life estimation method, the investing temperature loading spectrum that rain flow algorithm is obtained substitute into formula (8) and formula (9), obtain different temperatures and carry
Power cycle times N under lotusf,jWith temperature cycle times Nf,c, recycle formula (10)-(17) to be calculated, obtain IGBT device
The service life of part.
To sum up, the life-span prediction method of this IGBT device based on semi-physical emulation platform provided by the invention utilizes
The true TCU of motor-car/locomotive obtains the electricity such as electric current, voltage, the trigger pulse of IGBT device by semi-physical emulation platform and joins
Number provides electric current closer under actual condition, voltage change, the accuracy of collection in worksite data is equivalent to, for determination
The replacing construction of rail traffic IGBT device realizes that the whole-life cycle fee of IGBT device provides theoretical foundation.
The above is only a specific embodiment of the invention, is made skilled artisans appreciate that or realizing this hair
It is bright.Various modifications to these embodiments will be apparent to one skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.
It should be understood that the invention is not limited to the above-mentioned contents having been described, and its model can not departed from
It encloses and carry out various modifications and change.The scope of the present invention is limited only by the attached claims.
Claims (10)
1. the life-span prediction method of the IGBT device based on semi-physical emulation platform, which is characterized in that specifically comprise the following steps:
1) the true TCU of locomotive/motor-car is utilized, the electrical parameter of IGBT device is obtained by semi-physical emulation platform；
2) the power loss value of IGBT device is calculated according to the electrical parameter；
3) electric heating network model is utilized, the investing temperature change curve of IGBT device is obtained according to the loss value；
4) rain-flow counting statistics is carried out according to investing temperature load of the rain flow algorithm to IGBT device；
5) service life of IGBT device is calculated using the damage accumulation model of IGBT device.
2. the life-span prediction method of the IGBT device according to claim 1 based on semi-physical emulation platform, feature exist
In the step 1) utilizes the true TCU of locomotive/motor-car, and the electrical parameter of IGBT device, tool are obtained by semi-physical emulation platform
Body includes the following steps:
1.1) the true TCU of locomotive/motor-car is utilized, locomotive " starting-acceleration-at the uniform velocity-braking " is completed by semi-physical emulation platform
Entire operating condition emulation；
1.2) electricity to the IGBT device of four-quadrant power module, inverted power module is completed using high-resolution oscillograph
The data of parameter acquire.
3. the life-span prediction method of the IGBT device according to claim 2 based on semi-physical emulation platform, feature exist
In the step 1.1) utilizes the true TCU of locomotive/motor-car, and completing locomotive by semi-physical emulation platform, " starting-acceleration-is even
The entire operating condition emulation of speed-braking ", specifically comprises the following steps:
1.1.1 semi-physical emulation platform is connect with the true TCU of motor-car), carries out real-time simulation test；
1.1.2) by semi-physical emulation platform simulated locomotive work operating condition, traction state and on-position emulation are carried out；
1.1.3 it) being configured according to locomotive load power consumption, the load of four-quadrant module includes traction electric machine and auxiliary power module,
Inverter module load only includes traction electric machine, completes " starting-acceleration-at the uniform velocity-braking " entire operating condition emulation.
4. the life-span prediction method of the IGBT device according to claim 2 based on semi-physical emulation platform, feature exist
In the step 1.2) completes the IGBT device to four-quadrant power module, inverted power module using high-resolution oscillograph
The data of the electrical parameter of part acquire, and specifically comprise the following steps:
1.2.1 four-quadrant pulse signal, four-quadrant) are respectively completed using high-resolution oscillograph in half operational process in kind
Input current, four-quadrant IGBT electric current, inversion IGBT pulse, inverter current, DC bus-bar voltage, inversion IGBT electric current, motor
The acquisition of revolving speed totally eight road signals；
1.2.2 it) reads the waveform of collected eight road signal and converts thereof into excel tables of data.
5. the life-span prediction method of the IGBT device according to claim 1 based on semi-physical emulation platform, feature exist
In the power loss value of the IGBT device in the step 2) includes the power loss of IGBT and FRD chip, specifically calculates step
It is as follows:
2.1) conduction loss of IGBT device is calculated using the average loss method based on the switching frequency period: in electric current negative half period,
IGBT shutdown, FRD work, it is assumed that in negative half-cycle, have N number of switching pulse period (wave head number), in each pulse period
There is k calculating point, the conduction loss superposition of each pulse period can be obtained:
In formula (1), Pcond_TrFor the average conduction loss of igbt chip, Vcesat(Tj,IC(tj)) it is in i-th of output period of IGBT
Saturation voltage drop when j-th of sampled point conducting, ICFor j-th of sampled point current value；In formula (2), Pcond_DFor the flat of FRD chip
It is both turned on loss, VF(Tk,ID(tk)) it is s-th of the FRD chip saturation voltage drop exported when k-th of sampled point is connected in the period, IDFor
J-th of sampled point current value；
2.2) switching loss of IGBT device is calculated using formula (3), (4), wherein
In formula (3), Psw,TrFor the switching loss of igbt chip, EonEnergy, E are opened for IGBToffEnergy is turned off for IGBT,
ic(i-1)For the current value at i-1 moment, ic(i)For the current value at i moment, VdcFor input voltage value, VnomFor nominal voltage；Formula
(4) in, Psw,DFor the switching loss of FRD chip, Erec,sEnergy is turned off for FRD chip；
2.3) IGBT total losses, FRD total losses in switch periods are calculated using formula (5) and (6)；
PIGBT=Pcond_Tr+Psw_Tr (5)
PDiode=Pcond_D+Psw_D (6)
2.4) the total losses value of IGBT device in switch periods is calculated using formula (7).
PAlways=PDiode+PIGBT (7)
6. the life-span prediction method of the IGBT device according to claim 1 based on semi-physical emulation platform, feature exist
In the step 3) utilizes electric heating network model, and the investing temperature change curve of IGBT device, tool are obtained according to the loss value
Body includes the following steps:
3.1) shutdown curve is opened according to the IGBT provided in IGBT device specifications and is converted into device parameters database；
3.2) the loss calculation model based on mathematical method is utilized, utilizes " look-up table " to calculate real-time voltage, current data corresponding
Real-time loss；
3.3) using the calculation method of continuous work loss and instantaneous junction temperature, Modeling Calculation is carried out using Matlab and obtains IGBT device
Actual junction temperature and shell temperature change part during the work time.
7. the life-span prediction method of the IGBT device according to claim 1 or 6 based on semi-physical emulation platform, feature
It is, the electric heating network model is the RC ther mal network model based on Foster and Cauer.
8. the life-span prediction method of the IGBT device according to claim 1 based on semi-physical emulation platform, feature exist
In the step 4) carries out rain-flow counting statistics according to investing temperature of the rain flow algorithm to IGBT device, specifically includes following step
It is rapid:
4.1) temperature fluctuation occurred in investing temperature change curve is divided into the temperature width rank Δ T of several equal difference；
4.2) corresponding cycle-index num and mean temperature T in each temperature change width rank is countedm；
4.3) statistical result of temperature loading variation is calculated.
9. the life-span prediction method of the IGBT device according to claim 8 based on semi-physical emulation platform, feature exist
In, in the step 4.3), the statistical result of temperature loading variation include temperature change amplitude, quantity, mean temperature and
Investing temperature loading spectrum.
10. the life-span prediction method of the IGBT device according to claim 1 based on semi-physical emulation platform, feature exist
In the step 5) calculates the service life of IGBT device using the damage accumulation model of IGBT device, specifically comprises the following steps:
5.1) the investing temperature loading spectrum being calculated in step 4.3) is substituted into formula (8) and (9) and obtains different temperatures load
Power cycle number and temperature cycle times under lotus；
In formula (8), (9), Nf,jFor power cycle number under junction temperature surging condition, Nf,cFor temperature cycles under shell temperature surging condition time
Number, A, B, α, β are the constant of data fitting, and K is Boltzmann constant, K=1.380 × 10-23J/K, Δ TjFor variations injunction temperature,
ΔTcFor the variation of shell temperature, EaFor the excitation energy of silicon chip, Ea=9.89 × 10-20J, TjmFor average junction temperature, TcmFor average shell temperature；
5.2) number, the daily as caused by daily environment temperature introduced in ABB service life handbook are consumed according to station station PC
Influence of the cycles to the service life calculates PC life damage rate using life damage formula (10)-(12)；
In formula (10), NPC,stationFor PC cycle-index in the circulation of station station, DPC,stattionFor junction temperature fluctuation damage in the circulation of station station
Rate；
In formula (11), NPC,dailyFor PC cycle-index in day circulation, DPC,dailyDamage ratio is fluctuated for junction temperature in day circulation,For
Average junction temperature, TaFor environment temperature；
DPC=DPc,station+DPc,daily (12)
In formula (12), DPCFor the damage ratio as caused by junction temperature load change；
5.3) number is consumed according to station station TC, according to the daily as caused by daily environment temperature introduced in ABB service life handbook
Influence of the cycles to the service life calculates TC life damage rate using life damage formula (13)-(15), wherein
In formula (13), NTC,stationFor TC cycle-index in the circulation of station station, DTC,stationFor shell temperature fluctuation damage in the circulation of station station
Rate；
In formula (14), NTC,dailyFor TC cycle-index in day circulation, DTC,dailyDamage ratio is fluctuated for shell temperature in day circulation,It is flat
Equal shell temperature, TaFor environment temperature；
DTc=DTc,station+DTc,daily (15)
In formula (15), DTCFor the damage ratio as caused by shell temperature load change；
5.4) total damage ratio D of IGBT device is calculated；
In formula (16), daily cycle is day cycle-index, and station cycle is station station cycle-index, and D is that IGBT is always damaged
Hurt rate, NPC,stationFor PC cycle-index in the circulation of station station, NPC,dailyFor PC cycle-index in day circulation, NTC,stationFor station station
TC cycle-index in circulation, NTC,dailyFor TC cycle-index in day circulation；
5.5) service life of IGBT device is calculated.
The IGBT service life=1/D (17)
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| CN112986707A (en) * | 2019-12-02 | 2021-06-18 | 北京新能源汽车股份有限公司 | Service life assessment method and device of power module and automobile |
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| CN113125928A (en) * | 2021-04-20 | 2021-07-16 | 武汉大学 | IGBT module aging characterization method and system based on Miner theory |
| CN116186990A (en) * | 2022-12-19 | 2023-05-30 | 中国华能集团清洁能源技术研究院有限公司 | Combined heat and power simulation method and device |
| CN116738804A (en) * | 2023-08-16 | 2023-09-12 | 湖南大学 | Power module life prediction method based on failure physics |
| CN116738804B (en) * | 2023-08-16 | 2023-11-03 | 湖南大学 | Power module life prediction method based on failure physics |
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