CN110144568B - 一种用于制备纳米材料的气相反应炉 - Google Patents
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Abstract
本发明提出了一种用于制备纳米材料的气相反应炉，包括：炉体，炉体安装在炉体支架上，其特征在于：还包括供气系统、升降系统，供气系统设置在炉体的外侧并通过气管与炉体连通，炉体内设有上部导热板、导流均热板、炉腔、两个混气腔，炉体下部设有开口，上部导热板和两个导流均热板包裹在炉腔外部，混气腔位于导流均热板的外侧；在炉体下方还设有升降系统，升降系统上部设有升降台、炉门、下部导热板，炉门与炉体下部开口采用气密性结构密封。其有益效果是：本发明解决了小型CVD真空管式炉制备纳米材料面积小，生长不均匀的问题。
Description
技术领域
本发明涉及纳米材料制备领域，特别是指一种用于制备纳米材料的气相反应炉。
背景技术
目前，化学气相CVD法是可控制备大面积纳米材料的一种有效方法，它的主要原理是利用平面金属或陶瓷作为基底，在高温环境中通入一定量的碳源前驱体，相互作用后在金属或陶瓷表面沉积而得到纳米材料。化学气相沉积CVD法以含碳的物质为碳源，在高温状态下使碳源分解，碳原子通过高温后的分解在金属或陶瓷基材表面进行再排列，生长出纳米材料。化学气相CVD法制备的纳米材料通常有较大的面积，较高的结构质量，缺陷少，并且层数可控。但是化学气相CVD法制备纳米材料基本停留在实验室阶段，使用小型的CVD真空管试炉进行制备，对基材的尺寸有所限制，而且由于基材在加热管中是单向通气，纳米材料的生长不均匀。
发明内容
本发明为解决现有技术中小型CVD真空管式炉制备纳米材料面积小，生长不均匀的问题，提出一种用于制备纳米材料的气相反应炉。
本发明的技术方案是这样实现的：一种用于制备纳米材料的气相反应炉，其组成包括：炉体，所述炉体安装在炉体支架上，还包括供气系统、升降系统，所述供气系统设置在所述炉体的外侧并通过气管与所述炉体连通，所述炉体内设有上部导热板、导流均热板、炉腔、两个混气腔，所述炉体下部设有开口，所述上部导热板和两个所述导流均热板包裹在所述炉腔外部，所述混气腔位于所述导流均热板的外侧；在所述炉体下方还设有升降系统，所述升降系统上部设有升降台、炉门、下部导热板，所述炉门与所述炉体下部开口采用气密性结构密封。
两套所述供气系统通过气管分别于两个混气腔连通，在所述炉体的外侧还分别设有左侧排气孔和右侧排气孔，所述左侧排气孔和所述右侧排气孔也与所述混气腔连通。
在所述炉体内还设有若干加热装置，所述加热装置位于所述炉腔内壁的外侧，其下部穿过所述导流均热板插入到所述炉腔的中部。
所述导流均热板为中间设有凸起导流的多孔气体通过板。
本发明的有益效果是：
1.在形状、结构及其结合上，在炉腔内部加热装置的外部装有导流均热板、上部导热板、下部导热板，导热板可以使加热装置的点加热热源能过导热板的特殊材料性能，使热量均匀向物料传导，使物料受热更加均匀，反正更加完全；
2.在炉腔的两侧有两个锥形混气腔，当多路气体通过供气系统进入炉子后，在锥形的混气腔里进行预热混合，混合后的气体通过导流均热板上的细孔，使气体均匀的流向加热腔，与物料可以进行充分接触；
3.在炉体的两侧都有排气孔和进气孔，为了使物料能均匀进行气相沉积反应，在进行反应的时，前半程的反应时间从左进气孔进气，从右侧排气孔排气，后半程的反应调换进排气方向，从右侧进气孔进气，左侧排气孔排气，让反应气体充分与物料表面进行接触，避免出现反应沉积不均匀现象。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有付出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
如图1所示一种用于制备纳米材料的气相反应炉，其组成包括：炉体15，炉体15安装在炉体支架1上，炉体15的外壳为钢板密封结构，还包括供气系统2、升降系统11，供气系统2、升降系统11均由一套自动控制系统控制运行，供气系统2设置在炉体15的外侧并通过气管分别与炉体15的左侧进气孔4和右侧进气孔13连通，炉体15内设有上部导热板7、导流均热板6、炉腔16、两个混气腔5，炉体15下部设有开口，上部导热板7和两个导流均热板6包裹在炉腔16外部，锥形的混气腔5位于导流均热板6的外侧，导流均热板6为中间设有凸起导流的多孔气体通过板，气体在混气腔5内均匀的混合并通过导流均热板6上的细孔进入炉腔16中；在炉体15下方还设有升降系统11，升降系统11上部设有升降台17、炉门10、下部导热板9和物料8，炉门10安装在升降台17上，下部导热板9位于炉门10上部，物料8放置在下部导热板9上，物料8安装在下部导热板9上并有升降系统11送入炉腔16内，炉门10升到顶部后，炉门10与炉体15下部开口采用气密性结构密封。
两套供气系统2通过气管分别于左右两个混气腔5连通 ，在炉体15的外侧还分别设有左侧排气孔3和右侧排气孔14，左侧排气孔3和右侧排气孔14也与混气腔5连通，左侧排气孔3与右侧排气孔14上设有可以开关的气阀，可以通过供气系统2将炉腔16内的空气排空。
在炉体15内还设有若干加热装置，加热装置位于炉腔16内壁的两侧且均匀排列，其下部穿过导流均热板6插入到炉腔16的中部对炉腔16进行加热。
实施例一：
随着升降系统11下降，炉体15下部的炉门10也随之下降到装料的位置，将物料8放置到下部导热板9上，升降系统11升起，直至炉门10与炉体15完全闭合密封，在炉腔16密封后，通过左侧排气孔3和右侧排气孔14将炉腔16抽成真空，然后通过供气系统2的左侧进气孔4充入保护气体，保护气体经混气腔5、导流均热板6进入到炉腔16内，此时加热装置开启对炉腔16进行加热，在加热到一定温度后，供气系统2通过左侧进气孔4充入反应气体，反应气体在左侧的混气腔5中预热，随后通过导流均热板6进入炉腔16与物料8进行反应，残余气体通过右侧排气孔14排出，在反应气体反应一端时间后，关闭左侧进气孔4和右侧排气孔14，打开右侧进气孔13，让气体在右侧混气腔5进行预热混合后经过导流均热板6进入炉腔16进行反应，完成与左侧进气相同的反应时间；然后关闭反应气体，继续充入保护气体，降低加热装置的功率，逐步降温，当温度降至特定温度后，升降系统11下降，下部的炉门10打开，冷却至室温，从下部导热板9取下已经沉积反应完成的物料8。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (2)
1.一种用于制备纳米材料的气相反应炉，其组成包括：炉体，所述炉体安装在炉体支架上，其特征在于：还包括供气系统、升降系统，所述供气系统设置在所述炉体的外侧并通过气管与所述炉体连通，所述炉体内设有上部导热板、导流均热板、炉腔、两个混气腔，所述炉体下部设有开口，所述上部导热板和两个所述导流均热板包裹在所述炉腔外部，所述混气腔位于所述导流均热板的外侧；在所述炉体下方还设有升降系统，所述升降系统上部设有升降台、炉门、下部导热板，所述炉门与所述炉体下部开口采用气密性结构密封；
两套所述供气系统通过气管分别与两个混气腔连通，在所述炉体的外侧还分别设有左侧排气孔和右侧排气孔，所述左侧排气孔和所述右侧排气孔也与所述混气腔连通；
在所述炉体内还设有若干加热装置，所述加热装置位于所述炉腔内壁的外侧，其下部穿过所述导流均热板插入到所述炉腔的中部。
2.根据权利要求1所述的用于制备纳米材料的气相反应炉，其特征在于：所述导流均热板为中间设有凸起导流的多孔气体通过板。
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