CN110143025A - A kind of back board structure of novel glass substrate - Google Patents
A kind of back board structure of novel glass substrate Download PDFInfo
- Publication number
- CN110143025A CN110143025A CN201910261992.6A CN201910261992A CN110143025A CN 110143025 A CN110143025 A CN 110143025A CN 201910261992 A CN201910261992 A CN 201910261992A CN 110143025 A CN110143025 A CN 110143025A
- Authority
- CN
- China
- Prior art keywords
- hole
- glass substrate
- silicon nitride
- nitride layer
- back board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 90
- 239000011521 glass Substances 0.000 title claims abstract description 86
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 82
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910003460 diamond Inorganic materials 0.000 claims description 10
- 239000010432 diamond Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 5
- 238000009825 accumulation Methods 0.000 abstract description 3
- 230000006978 adaptation Effects 0.000 abstract description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/266—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by an apertured layer, the apertures going through the whole thickness of the layer, e.g. expanded metal, perforated layer, slit layer regular cells B32B3/12
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Abstract
The present invention provides a kind of back board structures of novel glass substrate, including glass substrate ontology and silicon nitride layer；The silicon nitride layer upper surface is set to the lower surface of the glass substrate ontology；The first through hole of multiple perforation silicon nitride layers and the second through-hole of multiple perforation silicon nitride layers are symmetrically arranged at left and right sides of silicon nitride layer position corresponding with the cutting position of glass substrate ontology, multiple first through hole and multiple second through-holes are uniformly distributed setting.The present invention passes through the through-hole that silicon nitride layer is arranged at left and right sides of cutting position, can effectively by cutting when, the stress generated on silicon nitride layer is released effectively, stress can be generated in glass substrate cutting by being able to solve silicon nitride layer, stress accumulation can make silicon nitride layer generate slight crack afterwards to a certain extent, the normal use for influencing glass substrate also results in the problem of glass substrate adaptation reduces.
Description
Technical field
The present invention relates to the glass substrate technical field of liquid crystal display panel more particularly to a kind of backboard knots of novel glass substrate
Structure.
Background technique
The glass substrate of liquid crystal display panel includes glass substrate ontology and the silicon nitride that glass substrate ontology lower surface is arranged in
SiNx layer, when glass substrate is cut, because of the stress inside SiNx insulating layer by external force, on glass substrate
It can gradually accumulate, SiNx insulating layer can be made to generate slight crack when reaching a certain level, since the position that slight crack generates has not really
It is qualitative, it will affect the normal use of glass substrate.
Summary of the invention
The technical problems to be solved by the present invention are: the present invention provides a kind of back board structure of novel glass substrate, energy
Enough normal uses for guaranteeing glass substrate after cutting.
In order to solve the above-mentioned technical problems, the present invention provides a kind of back board structures of novel glass substrate, including glass
Substrate body and silicon nitride layer；
The silicon nitride layer upper surface is set to the lower surface of the glass substrate ontology；The silicon nitride layer and glass base
The first through hole of multiple perforation silicon nitride layers is symmetrically arranged at left and right sides of the corresponding position of the cutting position of plate ontology
And the second through-hole of multiple perforation silicon nitride layers, multiple first through hole and multiple second through-holes are uniformly distributed setting.
Further, the glass substrate ontology with a thickness of 0.2-0.5mm, the silicon nitride layer with a thickness of 0.2-
0.5mm。
Further, the glass substrate body upper surface has a plurality of cutting line, on the silicon nitride layer with each
Be equipped with multiple equally distributed first through hole on the left of cutting line corresponding position, on the silicon nitride layer with each cutting line
Multiple equally distributed second through-holes are equipped on the right side of corresponding position.
Further, the first through hole and the second through-hole are symmetrical arranged about corresponding cutting line.
Further, on the silicon nitride layer with to be equipped on the left of each cutting line corresponding position multiple be in first gust
The first through hole of column distribution, first array are the array that multirow two arranges；
On the silicon nitride layer be equipped on the right side of each cutting line corresponding position it is multiple in second array distribution
Second through-hole, the second array are the array that multirow two arranges.
Further, the size and shape of the first through hole is identical as the size and shape difference of the second through-hole, and
For square through hole, diamond shape through-hole or circular through hole.
Further, the aperture of the circular through hole is 10um.
Further, the length and width of the square through hole is equal, and is 10um.
Further, the side length of the diamond shape through-hole is 10um.
Further, the first through hole and the second through-hole are respectively positioned in silicon nitride layer at the position outside metal routing.
The invention has the benefit that
The back board structure of a kind of novel glass substrate provided by the invention, in the left and right of the cutting position of glass substrate ontology
Two sides are symmetrically arranged multiple through-holes being uniformly distributed and penetrate through silicon nitride layer, can be realized in glass-cutting substrate, lead to
Cross the through-hole that silicon nitride layer is arranged at left and right sides of cutting position, can effectively by cutting when, the stress that generates on silicon nitride layer
Be released effectively, stress can be generated in glass substrate cutting by being able to solve silicon nitride layer, stress accumulation to a certain extent after
Silicon nitride layer can be made to generate slight crack, influence the normal use of glass substrate, also result in the problem of glass substrate adaptation reduces.
Detailed description of the invention
Fig. 1 is the schematic cross-section according to a kind of back board structure of novel glass substrate of the embodiment of the present invention；
Fig. 2 is the bottom view according to a kind of back board structure of novel glass substrate of the embodiment of the present invention；
Fig. 3 is the top view according to a kind of back board structure of novel glass substrate of the embodiment of the present invention；
Label declaration:
1, glass substrate ontology；2, silicon nitride layer；3, cutting line；4, first through hole；5, the second through-hole.
Specific embodiment
To explain the technical content, the achieved purpose and the effect of the present invention in detail, below in conjunction with embodiment and cooperate attached
Figure is explained in detail.
The design of most critical of the present invention are as follows: silicon nitride layer upper surface is set to the lower surface of glass substrate ontology；Silicon nitride
The first of multiple perforation silicon nitride layers is symmetrically arranged on layer at left and right sides of the cutting position of glass substrate ontology
Second through-hole of through-hole and multiple perforation silicon nitride layers, multiple first through hole and multiple second through-holes are uniformly distributed setting.
Fig. 1-Fig. 3 is please referred to, the present invention provides a kind of back board structures of novel glass substrate, including glass substrate ontology
And silicon nitride layer；
The silicon nitride layer upper surface is set to the lower surface of the glass substrate ontology；The silicon nitride layer and glass base
The first through hole of multiple perforation silicon nitride layers is symmetrically arranged at left and right sides of the corresponding position of the cutting position of plate ontology
And the second through-hole of multiple perforation silicon nitride layers, multiple first through hole and multiple second through-holes are uniformly distributed setting.
As can be seen from the above description, a kind of back board structure of novel glass substrate provided by the invention, in glass substrate ontology
Cutting position at left and right sides of be symmetrically arranged multiple through-holes being uniformly distributed and penetrate through silicon nitride layer, can be realized and cutting
When cutting glass substrate, the through-hole being arranged at left and right sides of cutting position by silicon nitride layer, can effectively by cutting when, silicon nitride
The stress generated on layer is released effectively, and stress, stress product can be generated in glass substrate cutting by being able to solve silicon nitride layer
It is tired that silicon nitride layer can be made to generate slight crack afterwards to a certain extent, the normal use of glass substrate is influenced, it is close to also result in glass substrate
The problem of conjunction property reduces.
Further, the glass substrate ontology with a thickness of 0.2-0.5mm, the silicon nitride layer with a thickness of 0.2-
0.5mm。
As can be seen from the above description, the setting of glass substrate ontology, silicon nitride layer and above-mentioned through-hole by above-mentioned thickness,
The stress generated when can discharge glass-cutting substrate to the maximum extent, the normal use of the glass substrate after guaranteeing cutting.
Further, the glass substrate body upper surface has a plurality of cutting line, on the silicon nitride layer with each
Be equipped with multiple equally distributed first through hole on the left of cutting line corresponding position, on the silicon nitride layer with each cutting line
Multiple equally distributed second through-holes are equipped on the right side of corresponding position.
As can be seen from the above description, glass substrate body upper surface has a plurality of cutting line, and in each cutting line
The left and right sides is equipped with through-hole, staff can be prompted to cut on cutting line, is conducive to when cutting on silicon nitride layer
The release of the stress of generation.
Further, the first through hole and the second through-hole are symmetrical arranged about corresponding cutting line.
As can be seen from the above description, by above structure, when can guarantee cutting, the stress of generation at left and right sides of glass substrate
It is discharged simultaneously.
Further, on the silicon nitride layer with to be equipped on the left of each cutting line corresponding position multiple be in first gust
The first through hole of column distribution, first array are the array that multirow two arranges；
On the silicon nitride layer be equipped on the right side of each cutting line corresponding position it is multiple in second array distribution
Second through-hole, the second array are the array that multirow two arranges.
As can be seen from the above description, not only can guarantee that silicon nitride layer upper stress discharged, but also will not influence glass by above structure
The normal use of substrate.
Further, the size and shape of the first through hole is identical as the size and shape difference of the second through-hole, and
For square through hole, diamond shape through-hole or circular through hole.
Further, the aperture of the circular through hole is 10um.
Further, the length and width of the square through hole is equal, and is 10um.
Further, the side length of the diamond shape through-hole is 10um.
As can be seen from the above description, by the through-hole of above-mentioned shape, it can be effectively to silicon nitride layer due to glass-cutting substrate
When the stress that generates be released effectively.
Further, the first through hole and the second through-hole are respectively positioned in silicon nitride layer at the position outside metal routing.
As can be seen from the above description, will not influence the normal use of glass substrate by above structure；Simultaneously in the present invention
Glass-cutting substrate refer both to glass-cutting this plate of substrate and the silicon nitride layer of this plate of glass substrate lower surface is arranged in cutting.
Please refer to Fig. 1-Fig. 3, the embodiment of the present invention one are as follows:
The present invention provides a kind of back board structures of novel glass substrate, including glass substrate ontology 1 and silicon nitride layer 2；
2 upper surface of silicon nitride layer is set to the lower surface of the glass substrate ontology 1；On the silicon nitride layer 2 with
Multiple perforation silicon nitride layers 2 are symmetrically arranged at left and right sides of the corresponding position of the cutting position of glass substrate ontology 1
Second through-hole 5 of first through hole 4 and multiple perforation silicon nitride layers 2, multiple first through hole 4 and multiple second through-holes 5 uniformly divide
Cloth setting；
The glass substrate ontology 1 with a thickness of 0.2-0.5mm, the silicon nitride layer 2 with a thickness of 0.2-0.5mm.
The embodiment of the present invention two are as follows:
The present embodiment two and the difference of embodiment one are that 1 upper surface of glass substrate ontology has a plurality of cutting line
3, on the silicon nitride layer 2 be equipped with multiple equally distributed first through hole 4 on the left of 3 corresponding position of each cutting line,
On the silicon nitride layer 2 with multiple equally distributed second through-holes 5 are equipped on the right side of 3 corresponding position of each cutting line；Institute
First through hole 4 and the second through-hole 5 is stated to be symmetrical arranged about corresponding cutting line 3；
The size and shape of the first through hole 4 is identical as the size and shape difference of the second through-hole 5, and is rectangular logical
Hole, diamond shape through-hole or circular through hole；The aperture of the circular through hole is 10um；The length and width of the square through hole is equal,
It and is 10um；The side length of the diamond shape through-hole is 10um；The first through hole 4 and the second through-hole 5 are respectively positioned in silicon nitride layer 2
At position outside metal routing.
The embodiment of the present invention three are as follows:
The present embodiment three and the difference of embodiment one are that 1 upper surface of glass substrate ontology has a plurality of cutting line
3, on the silicon nitride layer 2 with to be equipped on the left of 3 corresponding position of each cutting line multiple be in the first of the first array distribution
Through-hole 4, first array are the array that multirow two arranges；
On the silicon nitride layer 2 be equipped on the right side of 3 corresponding position of each cutting line it is multiple in second array be distributed
The second through-hole 5, the second array be multirow two arrange array；
The first through hole 4 and the second through-hole 5 are symmetrical arranged about corresponding cutting line 3；
The size and shape of the first through hole 4 is identical as the size and shape difference of the second through-hole 5, and is rectangular logical
Hole, diamond shape through-hole or circular through hole；The aperture of the circular through hole is 10um；The length and width of the square through hole is equal,
It and is 10um；The side length of the diamond shape through-hole is 10um；The first through hole 4 and the second through-hole 5 are respectively positioned in silicon nitride layer 2
At position outside metal routing；Center close to a column first through hole 4 of cutting line 3 is 8-15um at a distance from cutting line 3；It leans on
The center of one the second through-hole of column 5 of nearly cutting line 3 is 8-15um at a distance from cutting line 3.
The present invention is respectively arranged at left and right sides of cutting line during glass substrate processing procedure, through yellow light process
The through-hole (first through hole and the second through-hole) of stress release.
In conclusion a kind of back board structure of novel glass substrate provided by the invention, in the cutting of glass substrate ontology
It is symmetrically arranged multiple through-holes being uniformly distributed and penetrate through silicon nitride layer at left and right sides of position, can be realized in glass-cutting
When substrate, the through-hole being arranged at left and right sides of cutting position by silicon nitride layer, can effectively by cutting when, produce on silicon nitride layer
Raw stress is released effectively, and stress, stress accumulation to one can be generated in glass substrate cutting by being able to solve silicon nitride layer
Silicon nitride layer can be made to generate slight crack after determining degree, influence the normal use of glass substrate, also result in glass substrate adaptation drop
Low problem.Meanwhile the setting of the glass substrate ontology, silicon nitride layer and above-mentioned through-hole by above-mentioned thickness, it can be maximum
The stress generated when discharging to limit glass-cutting substrate, the normal use of the glass substrate after guaranteeing cutting；Also, glass base
Plate body upper surface has a plurality of cutting line, and is equipped with through-hole at left and right sides of each cutting line, can prompt work
Make personnel to cut on cutting line, the release of the stress generated on silicon nitride layer when being conducive to cutting.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalents made by bright specification and accompanying drawing content are applied directly or indirectly in other relevant technical fields, similarly
It is included within the scope of the present invention.
Claims (10)
1. a kind of back board structure of novel glass substrate, which is characterized in that including glass substrate ontology and silicon nitride layer；
The silicon nitride layer upper surface is set to the lower surface of the glass substrate ontology；The silicon nitride layer and glass substrate sheet
Be symmetrically arranged at left and right sides of the corresponding position of the cutting position of body it is multiple perforation silicon nitride layers first through hole and
Second through-hole of multiple perforation silicon nitride layers, multiple first through hole and multiple second through-holes are uniformly distributed setting.
2. a kind of back board structure of novel glass substrate according to claim 1, which is characterized in that the glass substrate sheet
Body with a thickness of 0.2-0.5mm, the silicon nitride layer with a thickness of 0.2-0.5mm.
3. a kind of back board structure of novel glass substrate according to claim 1, which is characterized in that the glass substrate sheet
Body upper surface has a plurality of cutting line, on the silicon nitride layer be equipped on the left of each cutting line corresponding position it is multiple
The first through hole of even distribution, on the silicon nitride layer be equipped with multiple be uniformly distributed on the right side of each cutting line corresponding position
The second through-hole.
4. a kind of back board structure of novel glass substrate according to claim 3, which is characterized in that the first through hole and
Second through-hole is symmetrical arranged about corresponding cutting line.
5. a kind of back board structure of novel glass substrate according to claim 3, which is characterized in that on the silicon nitride layer
Be equipped on the left of each cutting line corresponding position it is multiple be in the first array distribution first through hole, first array is
The array that multirow two arranges；
On the silicon nitride layer be equipped on the right side of each cutting line corresponding position it is multiple in second array distribution second
Through-hole, the second array are the array that multirow two arranges.
6. a kind of back board structure of novel glass substrate according to claim 5, which is characterized in that the first through hole
Size and shape is identical as the size and shape difference of the second through-hole, and is square through hole, diamond shape through-hole or circular through hole.
7. a kind of back board structure of novel glass substrate according to claim 6, which is characterized in that the circular through hole
Aperture is 10um.
8. a kind of back board structure of novel glass substrate according to claim 6, which is characterized in that the square through hole
Length and width is equal, and is 10um.
9. a kind of back board structure of novel glass substrate according to claim 6, which is characterized in that the diamond shape through-hole
Side length is 10um.
10. a kind of back board structure of novel glass substrate according to claim 3, which is characterized in that the first through hole
It is respectively positioned in silicon nitride layer with the second through-hole at the position outside metal routing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910261992.6A CN110143025B (en) | 2019-04-02 | 2019-04-02 | Backboard structure of glass substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910261992.6A CN110143025B (en) | 2019-04-02 | 2019-04-02 | Backboard structure of glass substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110143025A true CN110143025A (en) | 2019-08-20 |
| CN110143025B CN110143025B (en) | 2024-04-12 |
Family
ID=67589422
Family Applications (1)
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| CN201910261992.6A Active CN110143025B (en) | 2019-04-02 | 2019-04-02 | Backboard structure of glass substrate |
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| JP2001203174A (en) * | 2000-01-20 | 2001-07-27 | Denso Corp | Method for cutting junctioned substrate and junctioned substrate |
| KR101409338B1 (en) * | 2014-04-24 | 2014-06-24 | 주식회사 엘티에스 | Method for cutting glass substrate |
| US20180057390A1 (en) * | 2015-03-24 | 2018-03-01 | Corning Incorporated | Laser cutting and processing of display glass compositions |
| CN207659323U (en) * | 2017-12-05 | 2018-07-27 | 芜湖东旭光电装备技术有限公司 | Glass substrate cutter device |
| CN108598113A (en) * | 2018-04-24 | 2018-09-28 | 云谷（固安）科技有限公司 | Array substrate and display screen |
| CN109031820A (en) * | 2018-06-28 | 2018-12-18 | 武汉华星光电技术有限公司 | A kind of production method of array substrate, array substrate and display panel |
| CN109192881A (en) * | 2018-09-21 | 2019-01-11 | 武汉华星光电半导体显示技术有限公司 | Organic LED display panel and its cutting method |
| CN209879199U (en) * | 2019-04-02 | 2019-12-31 | 福建华佳彩有限公司 | Novel backboard structure of glass substrate |
-
2019
- 2019-04-02 CN CN201910261992.6A patent/CN110143025B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001203174A (en) * | 2000-01-20 | 2001-07-27 | Denso Corp | Method for cutting junctioned substrate and junctioned substrate |
| KR101409338B1 (en) * | 2014-04-24 | 2014-06-24 | 주식회사 엘티에스 | Method for cutting glass substrate |
| US20180057390A1 (en) * | 2015-03-24 | 2018-03-01 | Corning Incorporated | Laser cutting and processing of display glass compositions |
| CN207659323U (en) * | 2017-12-05 | 2018-07-27 | 芜湖东旭光电装备技术有限公司 | Glass substrate cutter device |
| CN108598113A (en) * | 2018-04-24 | 2018-09-28 | 云谷（固安）科技有限公司 | Array substrate and display screen |
| CN109031820A (en) * | 2018-06-28 | 2018-12-18 | 武汉华星光电技术有限公司 | A kind of production method of array substrate, array substrate and display panel |
| CN109192881A (en) * | 2018-09-21 | 2019-01-11 | 武汉华星光电半导体显示技术有限公司 | Organic LED display panel and its cutting method |
| CN209879199U (en) * | 2019-04-02 | 2019-12-31 | 福建华佳彩有限公司 | Novel backboard structure of glass substrate |
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|---|---|
| CN110143025B (en) | 2024-04-12 |
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