CN109031820A - A kind of production method of array substrate, array substrate and display panel - Google Patents
A kind of production method of array substrate, array substrate and display panel Download PDFInfo
- Publication number
- CN109031820A CN109031820A CN201810684318.4A CN201810684318A CN109031820A CN 109031820 A CN109031820 A CN 109031820A CN 201810684318 A CN201810684318 A CN 201810684318A CN 109031820 A CN109031820 A CN 109031820A
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- layer
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- array substrate
- static driven
- driven comb
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention provides the production method, array substrate and display panel of a kind of array substrate, wherein the production method of the array substrate includes: step S1, provides a glass substrate, and the glass substrate includes viewing area and non-display area；Step S2, Electro-static Driven Comb device is made in the non-display area of the glass substrate；Step S3, metal layer is made above the Electro-static Driven Comb device, the metal layer and the Electro-static Driven Comb device is made to constitute capacitor.The present invention increases metal layer by the top of the Electro-static Driven Comb device in array substrate so that metal layer and Electro-static Driven Comb device constitute capacitor, thus while having certain antistatic property equilibrium metal layer polysilicon layer up and down stress；In addition, reducing the thickness of the silicon nitride layer of metal layer by the way that insulating layer through-hole is arranged in the top of metal layer, further decreasing the big influence of non-metallic layer supercoated stress.
Description
Technical field
The present invention relates to display device technical field more particularly to a kind of production method of the array substrate of display device,
Array substrate and display panel.
Background technique
During small-size display is manufactured, many processing procedures are easy to produce electrostatic, and route is caused to wound, and circuit is different
Often, abnormal so as to cause display；To reduce influence of the electrostatic to product, when light shield manufacture, will increase many anti-electrostatic-discharges
(ESD) device；The ground of adjacent two array substrate is connected by metal protection route (Guard Ring) production, and two panels pass through
The ground of the two is attached by metal protection route, thus can be conducted between adjacent panels in the electrostatic that each processing procedure generates, can
Play the role of preferably dispersing that electrostatic is anti-wound；Metal protection route is produced in array substrate, is implanted into using Doped ions
Both sides are connected；Without metal pattern, rear layer silicon oxide or silicon nitride about 11200um, production process electrostatic and film above polysilicon
Ply stress double action, easily generation film layer crackle, and gradually deteriorate to film layer peeling: silicon oxide or silicon nitride fracture is prolonged always
Electro-static Driven Comb device, buffer layer are extended to, film layer flood starts in serious conditions array substrate, and crackle and film layer missing keep metal anti-
Shield route is broken in array segment, can not play anti-static electrification to rear end liquid crystal processing procedure；And crackle increase steam invasion is several
Rate, product reliability risk increase；In addition, being made at array segment metal protection route, in array substrate and color membrane substrates plywood
Afterwards, because unit cutting line nearby has production isolation sublayer support, herein because of polysilicon bed course high-land, unbalanced stress situation is more aobvious
It writes, is easier to that film layer crackle occurs, increases rear end risk.
Summary of the invention
Technical problem to be solved by the present invention lies in provide the production method of array substrate a kind of, array substrate and aobvious
Show panel, one layer of metal layer can be increased by the top of the Electro-static Driven Comb device in array substrate, be allowed to and electrostatic releaser
Part constitutes capacitor, and insulating layer hole is arranged in the top of metal layer, further decreases non-metallic layer supercoated stress.
The present invention provides a kind of production method of array substrate, includes the following steps:
Step S1, a glass substrate is provided, the glass substrate includes viewing area and non-display area；
Step S2, Electro-static Driven Comb device is made in the non-display area of the glass substrate；
Step S3, metal layer is made above the Electro-static Driven Comb device, makes the metal layer and the Electro-static Driven Comb device structure
At capacitor.
Wherein, the step S2 is specifically included:
Buffer layer and the Electro-static Driven Comb device are successively made in the non-display area of the glass substrate.
Wherein, the step S3 is specifically included:
Gate insulation layer and interlayer insulating film are successively made on the Electro-static Driven Comb device；
The metal layer is made on the interlayer insulating film.
Wherein, the method also includes:
Step S4, side successively makes insulating layer and passivation layer on the metal layer, is provided with via hole on the insulating layer.
The present invention also provides a kind of array substrates, include at least:
Glass substrate has viewing area and non-display area；
The non-display area of the glass substrate is arranged in Electro-static Driven Comb device；
The top of the Electro-static Driven Comb device is arranged in metal layer, constitutes capacitor with the Electro-static Driven Comb device.
Wherein, further includes:
The buffer layer being formed on the glass substrate, the Electro-static Driven Comb device are set to the buffer layer of the non-display area
On.
Wherein, further includes:
The gate insulation layer and interlayer insulating film being sequentially formed on the Electro-static Driven Comb device, the metal layer are formed in the layer
Between on insulating layer.
Wherein, further includes:
It is sequentially formed at the insulating layer and passivation layer of the metal layer, is provided with via hole on the insulating layer.
The present invention also provides a kind of display panels, including array substrate above-mentioned, are oppositely arranged with the array substrate
Color membrane substrates, and the liquid crystal layer being arranged between the array substrate and the color membrane substrates.
The present invention increases metal layer by the top of the Electro-static Driven Comb device in array substrate, so that metal layer and electrostatic
Dispensing device constitute capacitor, thus while having certain antistatic property equilibrium metal layer up and down polysilicon layer stress；
In addition, reducing the thickness of the silicon nitride layer of metal layer by the way that insulating layer through-hole is arranged in the top of metal layer, further dropping
The big influence of low non-metallic layer supercoated stress, heavily doped polysilicon dispensing device region when reducing base plate deformation in cutting process
Stress, film caused by preventing from cutting splits, and the stability and cutting yield of display device processing procedure is improved, to improve display
The production acceptance rate of part.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the floor map for having the display master blank of Electro-static Driven Comb device in the prior art.
Fig. 2 is the organigram of display panel in the prior art.
Fig. 3 is the organigram of the display panel in the embodiment of the present invention.
Specific embodiment
The explanation of following embodiment be with reference to attached drawing, can be to the specific embodiment implemented to the example present invention.
Fig. 1 shows the schematic diagram for having the display master blank of Electro-static Driven Comb device in the prior art, which includes
Display panel 1 and display panel 2, display panel 1 include metal protection route 11, and display panel 2 includes metal protection route 22,
It can be seen from the figure that metal protection route 11 is connected to metal protection route 22.
Fig. 2 shows the process structure figure of display panel in the prior art, display panel includes array substrate 3 and color film base
Plate 4, and the liquid crystal layer (not shown) being set between array substrate and color membrane substrates, wherein color membrane substrates 4 include the
One glass substrate 41 and isolation sublayer 42, array substrate 3 include the second glass substrate 31, and the second glass substrate 31 includes viewing area
Domain and non-display area, the buffer layer 32 sequentially formed on the non-display area of the second glass substrate 31, Electro-static Driven Comb device
33, gate insulation layer 34 and interlayer insulating film 35, the first insulating layer 36,37 and of second insulating layer being formed on interlayer insulating film 35
Passivation layer 38, wherein the Electro-static Driven Comb device is a heavily doped polysilicon layer, due to the non-display area increase in array substrate
Electro-static Driven Comb device 33, thus the one side opposite with color membrane substrates 4 in array substrate 3, will form protrusion in non-display area
Part, thus when by color membrane substrates 4 with 3 groups of array substrate vertical cuttings, it will lead to unbalance stress, the rupture of 3 film layer of array substrate.
The embodiment of the present invention one provides a kind of production method of array substrate comprising following steps:
Step S1, a glass substrate is provided, the glass substrate includes viewing area and non-display area.
Step S2, Electro-static Driven Comb device is made in the non-display area of the glass substrate.
Wherein, step S2 is specifically included:
Buffer layer and Electro-static Driven Comb device are successively made in the non-display area of glass substrate, specific Electro-static Driven Comb device is a weight
Doped polysilicon layer.
Step S3, metal layer is made above the Electro-static Driven Comb device, makes the metal layer and the electrostatic releaser
Part constitutes capacitor.
Wherein step S3 is specifically included:
Gate insulation layer and interlayer insulating film are successively made in the top of the Electro-static Driven Comb device, it is exhausted which is formed in interlayer
The top of edge layer.
The production method further includes step S4:
Insulating layer and passivation layer are successively made in the top of the metal layer, is provided with via hole on the insulating layer.
Wherein, by the way that insulating layer via hole is arranged in the top of metal layer, so that the 4000um S of metal layeriN thickness
It is reduced to 1000um(PV), further decrease the big influence of non-metallic layer supercoated stress.
Second embodiment of the present invention provides a kind of array substrate, which is included at least:
Glass substrate has viewing area and non-display area；
The non-display area of the glass substrate is arranged in Electro-static Driven Comb device；
The top of the Electro-static Driven Comb device is arranged in metal layer, constitutes capacitor with the Electro-static Driven Comb device.
Specifically, which is a heavily doped polysilicon layer.
Specifically, array substrate further include: the buffer layer being formed on the glass substrate, the Electro-static Driven Comb device
It is set on the buffer layer of the non-display area.
Specifically, array substrate further include: the gate insulation layer and layer being formed between Electro-static Driven Comb device and metal layer
Between insulating layer, metal layer is located on interlayer insulating film.
Specifically, the array substrate further include:
It is sequentially formed at metal layer insulating layer and passivation layer, insulating layer via hole is set on the insulating layer.
The embodiment of the present invention three provides a kind of display panel, the array substrate including being oppositely arranged and color membrane substrates, and
The liquid crystal layer being arranged between,
Color membrane substrates include substrate, and the non-display area of the substrate is provided with isolation sublayer,
Array substrate is provided with Electro-static Driven Comb device in the non-display area of the glass substrate of the array substrate and is arranged in institute
State the metal layer for constituting capacitor above Electro-static Driven Comb device with the Electro-static Driven Comb device.
Specifically, array substrate further include: the buffer layer being formed between glass substrate and Electro-static Driven Comb device, electrostatic
Dispensing device is set on the buffer layer.
Specifically, array substrate further include: the grid being formed between the Electro-static Driven Comb device and the metal layer are exhausted
Edge layer and interlayer insulating film, the metal layer are formed on the interlayer insulating film.
Specifically, array substrate further include: be sequentially formed at the insulating layer and passivation layer of metal layer, on the insulating layer
Insulating layer via hole is set.
It is illustrated referring to Fig. 3, in the present embodiment, display panel of the invention includes the color film being oppositely arranged
Substrate 4, array substrate 5 and the liquid crystal layer (not shown) being arranged between color membrane substrates 4 and array substrate 5, color membrane substrates
Including the first glass substrate 41 and isolation sublayer 42, wherein isolation sublayer 42 includes multiple insulators, array substrate 5 includes second
Glass substrate 31, and the buffer layer 32, the Electro-static Driven Comb device 33, gate insulation layer that are successively formed on the second glass substrate 31
34, interlayer insulating film 35, metal layer 39, insulating layer via hole 40 and passivation layer 38.Wherein, Electro-static Driven Comb device 33 is a heavy doping
Polysilicon layer, due to only existing polysilicon, thus Electro-static Driven Comb device 33 and gold between Electro-static Driven Comb device 33 and metal layer 39
Belong to and forms capacitor between layer 39, which can store certain electrostatic, have the function of certain anti-static electrictity release, meanwhile,
The metal layer 39 can also balanced non-metallic layer up and down stress.In the top of metal layer 39, by original first insulating layer, 37 He
Second insulating layer 38 is arranged to insulating layer via hole, so that the 4000um S of 39 top of metal layeriN thickness is reduced to 1000um, into
One step reduces the big influence of non-metallic layer supercoated stress.
The present invention increases metal layer by the top of the Electro-static Driven Comb device in array substrate, so that metal layer and electrostatic
Dispensing device constitute capacitor, thus while having certain antistatic property equilibrium metal layer up and down polysilicon layer stress；
In addition, reducing the thickness of the silicon nitride layer of metal layer by the way that insulating layer through-hole is arranged in the top of metal layer, further dropping
The big influence of low non-metallic layer supercoated stress, heavily doped polysilicon dispensing device region when reducing base plate deformation in cutting process
Stress, film caused by preventing from cutting splits, and the stability and cutting yield of display device processing procedure is improved, to improve display
The production acceptance rate of part.
The above disclosure is only the preferred embodiments of the present invention, cannot limit the right model of the present invention with this certainly
It encloses, therefore equivalent changes made in accordance with the claims of the present invention, is still within the scope of the present invention.
Claims (9)
1. a kind of production method of array substrate, which comprises the steps of:
Step S1, a glass substrate is provided, the glass substrate includes viewing area and non-display area；
Step S2, Electro-static Driven Comb device is made in the non-display area of the glass substrate；
Step S3, metal layer is made above the Electro-static Driven Comb device, makes the metal layer and the Electro-static Driven Comb device structure
At capacitor.
2. manufacturing method according to claim 1, which is characterized in that the step S2 is specifically included:
Buffer layer and the Electro-static Driven Comb device are successively made in the non-display area of the glass substrate.
3. manufacturing method according to claim 1, which is characterized in that the step S3 is specifically included:
Gate insulation layer and interlayer insulating film are successively made on the Electro-static Driven Comb device；
The metal layer is made on the interlayer insulating film.
4. manufacturing method according to claim 1, which is characterized in that the method also includes:
Step S4, side successively makes insulating layer and passivation layer on the metal layer, is provided with via hole on the insulating layer.
5. a kind of array substrate, which is characterized in that include at least:
Glass substrate has viewing area and non-display area；
The non-display area of the glass substrate is arranged in Electro-static Driven Comb device；
The top of the Electro-static Driven Comb device is arranged in metal layer, constitutes capacitor with the Electro-static Driven Comb device.
6. array substrate according to claim 5, which is characterized in that further include:
The buffer layer being formed on the glass substrate, the Electro-static Driven Comb device are set to the buffer layer of the non-display area
On.
7. array substrate according to claim 5, which is characterized in that further include:
The gate insulation layer and interlayer insulating film being sequentially formed on the Electro-static Driven Comb device, the metal layer are formed in the layer
Between on insulating layer.
8. array substrate according to claim 5, which is characterized in that further include:
It is sequentially formed at the insulating layer and passivation layer of the metal layer, is provided with via hole on the insulating layer.
9. a kind of display panel, it is characterised in that:
Including the described in any item array substrates of claim 5-8, the color membrane substrates being oppositely arranged with the array substrate, and
Liquid crystal layer between the array substrate and the color membrane substrates is set.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810684318.4A CN109031820A (en) | 2018-06-28 | 2018-06-28 | A kind of production method of array substrate, array substrate and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810684318.4A CN109031820A (en) | 2018-06-28 | 2018-06-28 | A kind of production method of array substrate, array substrate and display panel |
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| Publication Number | Publication Date |
|---|---|
| CN109031820A true CN109031820A (en) | 2018-12-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810684318.4A Pending CN109031820A (en) | 2018-06-28 | 2018-06-28 | A kind of production method of array substrate, array substrate and display panel |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110143025A (en) * | 2019-04-02 | 2019-08-20 | 福建华佳彩有限公司 | A kind of back board structure of novel glass substrate |
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| CN107422561A (en) * | 2017-09-22 | 2017-12-01 | 惠科股份有限公司 | Active switch array substrate and liquid crystal display panel |
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2018
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| CN102683381A (en) * | 2011-03-18 | 2012-09-19 | 三星移动显示器株式会社 | Organic light emitting diode display and manufacture method thereof |
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| CN110143025A (en) * | 2019-04-02 | 2019-08-20 | 福建华佳彩有限公司 | A kind of back board structure of novel glass substrate |
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Application publication date: 20181218 |