CN110139457A - Sub- vacuum low-temperature plasma on-line continuous material handling device - Google Patents
Sub- vacuum low-temperature plasma on-line continuous material handling device Download PDFInfo
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- CN110139457A CN110139457A CN201811310125.9A CN201811310125A CN110139457A CN 110139457 A CN110139457 A CN 110139457A CN 201811310125 A CN201811310125 A CN 201811310125A CN 110139457 A CN110139457 A CN 110139457A
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- 239000000109 continuous material Substances 0.000 title claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 54
- 230000003139 buffering effect Effects 0.000 claims abstract description 34
- 238000012545 processing Methods 0.000 claims abstract description 34
- 238000005192 partition Methods 0.000 claims abstract description 11
- 238000007599 discharging Methods 0.000 claims abstract description 10
- 230000005284 excitation Effects 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 7
- 230000008676 import Effects 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000010431 corundum Substances 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 18
- 230000004888 barrier function Effects 0.000 description 12
- 238000004804 winding Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
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- 238000004134 energy conservation Methods 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2437—Multilayer systems
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2245/00—Applications of plasma devices
- H05H2245/40—Surface treatments
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- Physical Or Chemical Processes And Apparatus (AREA)
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Abstract
A kind of Asia vacuum low-temperature plasma on-line continuous material handling device, including unreeling structure, sub- vacuum low-temperature plasma material processing apparatuses and unreeling structure, sub- vacuum low-temperature plasma material processing apparatuses include more than one main cavity and multi-stage vacuum buffering cavity, main cavity is located at centre, buffering cavities at different levels are symmetrically distributed in main cavity two sides, it successively arranges along the trend of material, it is closed between main chamber body and buffering cavity or by partition between adjacent buffer cavity, through-hole is equipped in the middle part of partition, the electrode group of sub- vacuum low-temperature plasma material processing apparatuses runs through main cavity and each buffering cavity, material is passed through from the discharging gap of electrode group, the vacuum range of main chamber body is 99900~10Pa.Present invention can be implemented under sub- vacuum environment, there is better treatment effect to material to the continuous processing of the material within the scope of certain wide cut, and compared to atmospheric low-temperature plasma processing unit, work efficiency is high, the operation is stable.
Description
Technical field
The present invention relates to lower temperature plasma technology field, specially a kind of sub- vacuum low-temperature plasma on-line continuous material
Material processing device.
Background technique
Plasma is a kind of material aggregation state of high-energy, wherein containing a large amount of electronics, ion, excitation state original
Son, molecule, photon and free radical isoreactivity particle.The physics that can cause material surface is handled using plasma material
Change (such as etching desorbs, sputtering, injection, excites and ionize) and chemical change (is such as aoxidized, decomposes, is crosslinked, polymerize and is connect
Branch etc.), change material surface characteristic (including hydrophily, hydrophobicity, adhesiveness, anti-flammability, anti-corrosive properties, static electricity resistance to reach
And biocompatibility) purpose.Plasma can pass through glow discharge, corona discharge, dielectric barrier discharge, radio frequency discharge
And the modes such as microwave discharge generate.Dielectric barrier discharge is a kind of nonequilibrium state gas for having dielectric insertion discharge space
Electric discharge.It is full of certain working gas between two discharge electrodes, and wherein one or two electrode is covered with dielectric
Medium can also be hung directly from discharge space or use granular media filler wherein by lid, sufficient when applying between two electrodes
When reaching high alternating voltage, interelectrode gas can be breakdown and generation is discharged, that is, produces dielectric barrier discharge.
Dielectric barrier discharge (DBD) is that have a kind of nonequilibrium state gas discharge of dielectric insertion discharge space to be also known as situated between
Matter barrier discharge or voltolising.Dielectric barrier discharge can generate electric discharge in the very wide air pressure range of low pressure to hyperbar,
It can also be 10 in very wide frequency ranges of operation, common operating air pressure4~106, supply frequency can be from 50Hz to 1MHz.
The design form of electrode structure is varied.Between two discharge electrodes be full of certain working gas, and by one of them or
Two electrodes are covered with dielectric, medium can also be hung directly from discharge space or using granular media filler its
In, when applying sufficiently high alternating voltage between two electrodes, interelectrode gas can be breakdown and generation is discharged, that is, produces Jie
Matter barrier discharge.In practical applications, the electrode structure of pipeline is widely used in various chemical reactors, and plate
Formula electrode structure is then widely used in macromolecule and the modification of metallic film and plate, grafting, surface tension in industry
Raising, in cleaning and hydrophilic modifying.
Summary of the invention
The present invention for atmospheric low-temperature plasma processing unit still have some deficits to material processing effect and treatment temperature
Height cannot handle the capped fiber problem of fibre bundle, and be not easy to realize continuous processing under vacuum environment, and processing energy is not
It can converge near material, the demanding situation of vacuum environment, propose a kind of sub- vacuum low-temperature plasma on-line continuous material
Material processing device, it can be achieved that under sub- vacuum condition glow discharge uniform low-temperature plasma, and can effectively continuous processing
Required processing material.
The technical solution of the present invention is as follows:
A kind of Asia vacuum low-temperature plasma on-line continuous material handling device, including unreeling structure, sub- vacuum and low temperature plasma
Body material processing apparatuses and rolling-up mechanism, it is characterised in that:
The Asia vacuum low-temperature plasma material processing apparatuses include more than one main cavity and multi-stage vacuum buffering cavity,
Main cavity is located at centre, and buffering cavities at different levels are symmetrically distributed in main cavity two sides, successively arranges along the trend of required processing material
Cloth is closed between main chamber body and buffering cavity or by partition between adjacent buffer cavity, is equipped with and is situated between in the middle part of the partition
The through-hole that matter barrier structure electrode group and material pass through, the electrode group of sub- vacuum low-temperature plasma material processing apparatuses is through master
Cavity and each buffering cavity, material are passed through from the discharging gap of electrode group, and the vacuum range of main chamber body is 99900~
10Pa。
On the basis of above scheme, further improvement or preferred scheme further include:
The electrode group abuts through-hole wall, and the discharging gap control is between 1-300mm.
The electrode group includes positive phase high-field electrode group and minus phase high-field electrode group, the positive phase high-field electrode group
Including more than one positive phase high-field electrode, minus phase high-field electrode group includes more than one minus phase high-field electrode, just
The connection of the positive phase high-voltage output end of phase high-field electrode and plasma excitation power supply, minus phase high-field electrode and plasma
The minus phase high-voltage output end of excitation power supply connects.
The plasma excitation power supply is differential power, positive phase high-voltage output end and minus phase high-voltage output end
Output amplitude is equal in magnitude, opposite in phase.
The lateral ends of two outermost buffering cavities are respectively equipped with atmosphere import, and the atmosphere import and atmosphere gas cylinder connect
It connects.
The electrode group is internal equipped with metal hollow pipe, and outside covers the electrode of corundum, quartz or ceramic block media,
The metal hollow pipe is connect with cooling blower.
The utility model has the advantages that
Asia vacuum low-temperature plasma on-line continuous material handling device of the invention may be implemented under sub- vacuum environment to linear material
The continuous processing of material can satisfy surface tension and surface energy that material improves material after treatment, and compared to atmospheric low-temperature
Plasma processing apparatus has better treatment effect to material, and treatment temperature is low, and energy can concentrate on processed material
Near, it can handle and be overlapped mutually in the fiber part of a branch of fibrous inside, work efficiency is high, and the operation is stable passes through cushion chamber
The barrier action of body, the dynamic equilibrium state of the sub- vacuum of the maintenance for keeping main cavity stable, and having broken kPa rank or less could be real
The bottleneck of existing glow discharge.Vacuum environment requirement of the present invention is low, is easy to vacuumize, and equipment cost is relatively low, and energy conservation handles atmosphere
Concentration is high, and can apply various gases.
Detailed description of the invention
Fig. 1 is the right side structural representation of sub- vacuum low-temperature plasma on-line continuous material handling device.
Fig. 2 is the schematic view of the front view of sub- vacuum low-temperature plasma on-line continuous material handling device.
Fig. 3 is the overlooking structure diagram of sub- vacuum low-temperature plasma on-line continuous material handling device.
Fig. 4 is the left view structural representation of sub- vacuum low-temperature plasma on-line continuous material handling device.
Fig. 5 is the schematic perspective view of sub- vacuum low-temperature plasma on-line continuous material handling device.
Fig. 6 is the schematic perspective view of sub- vacuum low-temperature plasma on-line continuous material handling device.
Fig. 7 is the schematic diagram of internal structure of sub- vacuum low-temperature plasma on-line continuous material handling device.
Specific embodiment
For the technical solution and working principle that the present invention is furture elucidated, with reference to the accompanying drawing with specific embodiment to this
Invention is described in detail.
A kind of sub- vacuum low-temperature plasma on-line continuous material handling device as shown in Figures 1 to 7, including unreeling machine
Structure 1, sub- vacuum low-temperature plasma material processing apparatuses 2, rolling-up mechanism 4, lower margin 5, differential feed dielectric barrier discharging low-temperature
The building blocks such as plasma electrical source, vaccum-pumping equipment, atmosphere control system, electric control system, cooling system.
The unreeling structure 1, rolling-up mechanism 4 are separately positioned on a left side for sub- vacuum low-temperature plasma material processing apparatuses 2
Right two sides, the position of corresponding 2 inlet port and outlet port of Asia vacuum low-temperature plasma material processing apparatuses, are equipped with reel and adjusting
Knob adjusts the elasticity of reel by adjusting knob, to guarantee that filamentary material exists according to the type of filamentary material when work
It will not be pulled off during putting, winding.Rolling-up mechanism 4 is rotated by the drive of motor, while the guide rail of winding displacement swings,
When treated filamentary material is wound on closed reel by godet roller, winding displacement guide rail, which swings, keeps filamentary material equal
Even winding is on closed reel.
As shown in fig. 7, the Asia vacuum low-temperature plasma material processing apparatuses 2 include two main cavities 16 and two two
Grade vacuum buffer cavity 19, two main cavities 16 are located at centre, and two secondary vacuum buffering cavities 19 are symmetricly set on two masters
The two sides of cavity 16.Closed between main cavity 16 and buffering cavity 19 by partition, be equipped in the middle part of the partition hold electrode group and
The through-hole that filamentary material passes through, the electrode group extend transversely through two main cavities 16 and secondary vacuum buffering cavity 19, linear material
Material is passed through from electrode group discharging gap.
In the present embodiment, the Asia vacuum low-temperature plasma material processing apparatuses 2 are preferably hindered using differential feed dielectric
Discharge low-temperature plasma equipment is kept off to the control method (patent document of such as CN200720035097.5 of electrode operating voltage
Disclosed differential feed dielectric barrier discharging low-temperature plasma device), i.e., using differential power as the sharp of plasma
Encourage power supply.The dielectric impedance structure electrode group being arranged in the Asia vacuum low-temperature plasma material processing apparatuses 2 includes positive high
Press electrode group and negative high-voltage electrode group, the discharging gap, that is, positive high voltage electrode group and negative high-voltage electrode group gap, material from
Pass through among two electrode groups.The positive high voltage electrode group includes more than one positive high voltage electrode, and negative high-voltage electrode group is equipped with pair
The negative high-voltage electrode of quantity is answered, positive high voltage electrode is connect with the positive high voltage output end of difference plasma excitation power supply, negative high voltage
Electrode is connect with the negative high voltage output end of difference plasma excitation power supply, the positive high voltage output end and negative high voltage output end
Amplitude output signal size (basic) is equal, opposite in phase.The positive phase high-field electrode and/or minus phase high-field electrode use
Inside is equipped with metal hollow pipe 17, the electrode of outside covering corundum, quartz or ceramic block media.
The atmosphere control system is by atmosphere gas cylinder 11 and the air inlet pipeline structure provided with control climate valve 10, flowmeter
At, be equipped with multiple groups atmosphere gas cylinder, after being connected into secondary vacuum buffering cavity, being mixed into for more atmosphere can be carried out.It is described to vacuumize
Equipment includes vacuum pump 7 and the gas exhaust piping for being equipped with vacuum control valve 6, and the gas outlet of each main cavity 16 passes through sub- vacuum suction
Flange 20 is connect with the gas exhaust piping, and secondary vacuum buffering cavity 19 passes through level 2 buffering vacuum suction flange 14 and the row
Air pipe connection.The lateral ends of two secondary vacuum buffering cavities 19 are arranged in the level 2 buffering vacuum suction flange 14, and
Two level 2 buffering vacuum suction flanges 14 are respectively equipped with an atmosphere import 8, and the atmosphere import 8 passes through the air inlet pipeline and gas
Atmosphere gas cylinder 11 connects.
The cooling system includes the part cooling for electrode interior, and the vacuum pump 7 is used for main cavity 16 and second level
Vacuum buffer cavity 19 vacuumizes.The cooling of electrode interior is realized by vortex fan 9, in the vortex fan 9 and electrode
The metal hollow pipe 17 in portion connects, and gas source is constantly passed through electrode interior, the temperature of electrode interior is caused to reach certain journey
It keeps stablizing when spending.In the present embodiment, the cooling of main cavity 16, secondary vacuum buffering cavity 19 and electrode exterior passes through described true
Sky pump 7 can be realized, therefore not add mechanism still further.Sub- 2 bottom of vacuum low-temperature plasma material processing apparatuses is equipped with vacuum
Pumping vacuum and vacuum breaker mouth.
The electric control system includes that the control touching of sub- 2 top of vacuum low-temperature plasma material processing apparatuses is arranged in
Screen 3 is touched, as the interface for realizing human-computer interaction.
In apparatus of the present invention, the vacuum range of main chamber body 16 is 99900~10Pa, thus breaking vacuum degree kPa
The bottleneck of glow discharge is just able to achieve below rank.It on the basis of the above embodiments, can in the case where implementation condition allows
The vacuum drawn of more stages is set, i.e. buffering cavity can be set as more stages, for example, in the outer of two secondary vacuum buffering cavities 19
Portion (direction for feeding and discharging), then the buffering cavities such as three-level, level Four are set gradually, to ensure to reach different vacuum level requirements
Under plasma discharge environment.Partition can be used, adjacent buffering cavity is isolated, through-hole is set on the partition, makes electrode
Group runs through main cavity and all buffering cavities.Since apparatus of the present invention are used for the continuous processing to filamentary material, when linear material
When expecting to enter sub- vacuum low-temperature plasma material processing apparatuses 2, and passing through from equipment 2, outside atmosphere and buffering cavity are delayed
The circulation for having gas unavoidably is rushed among cavity and main cavity, and the setting of buffering cavity can be used as the vacuum degree protection screen of main cavity
Barrier, by continuing working for vacuum pump 7, sub- vacuum environment needed for the maintenance for keeping its stable, i.e. the vacuum degree of buffering cavity is low
In main cavity 16, and under normal circumstances, the vacuum degree of each buffering cavity can be to sub- vacuum low-temperature plasma material processing apparatuses 2
Inlet port and outlet port direction successively decrease step by step.
To reduce secondary vacuum buffering cavity 19 and outside atmosphere, between main cavity 16 and secondary vacuum buffering cavity 19
The circulation of gas, through-hole designs small as far as possible on the partition, so that electrode group is abutted the inner wall of through-hole, can generally put described
Electric gap control is between 1-300mm.
The present embodiment device is easy to operate, and controllability is strong, and the plasma generated under sub- vacuum state is uniform, and handles effect
Fruit is good.
The basic principles, main features and advantages of the present invention have been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, the present invention
Claimed range is delineated by the appended claims, the specification and equivalents thereof from the appended claims.
Claims (6)
1. a kind of Asia vacuum low-temperature plasma on-line continuous material handling device, including unreeling structure (1), sub- vacuum and low temperature etc.
Gas ions material processing apparatuses (2) and rolling-up mechanism (4), it is characterised in that:
The Asia vacuum low-temperature plasma material processing apparatuses (2) include that more than one main cavity (16) and multi-stage vacuum are slow
It rushes cavity (19), main cavity (16) is located at centre, and buffering cavities (19) at different levels are symmetrically distributed in main cavity (16) two sides, along institute
The trend that material need to be handled successively is arranged, between main chamber body (16) and buffering cavity (19) or adjacent buffer cavity (19) it
Between closed by partition, dielectric impedance structure electrode group is equipped in the middle part of the partition and through-hole that material passes through, sub- vacuum and low temperature
The electrode group of plasma material processing equipment (2) runs through main cavity (19) and each buffering cavity (19), and material is from electrode group
It is passed through in discharging gap, the vacuum range of main chamber body (16) is 99900~10Pa.
2. a kind of sub- vacuum low-temperature plasma on-line continuous material handling device according to claim 1, feature exist
In the outer surface of the electrode group reclines in through-hole, and the discharging gap control is between 1-300mm.
3. a kind of sub- vacuum low-temperature plasma on-line continuous material handling device according to claim 1, feature exist
In the electrode group includes positive phase high-field electrode group and minus phase high-field electrode group, and the positive phase high-field electrode group includes
More than one positive phase high-field electrode, minus phase high-field electrode group include more than one minus phase high-field electrode, positive phase
The connection of the positive phase high-voltage output end of high-field electrode and plasma excitation power supply, minus phase high-field electrode and plasma excitation
The minus phase high-voltage output end of power supply connects.
4. a kind of sub- vacuum low-temperature plasma on-line continuous material handling device according to claim 3, feature exist
In the plasma excitation power supply is differential power, the output of positive phase high-voltage output end and minus phase high-voltage output end
Amplitude is equal in magnitude, opposite in phase.
5. a kind of sub- vacuum low-temperature plasma on-line continuous material handling device according to claim 1, feature exist
In the lateral ends of two outermost buffering cavities (19) are respectively equipped with atmosphere import (8), the atmosphere import (8) and atmosphere
Gas cylinder (11) connection.
6. a kind of sub- vacuum low-temperature plasma on-line continuous material processing dress according to any one of claims 1-5
It sets, which is characterized in that the electrode group is equipped with metal hollow pipe using internal, and outside covering corundum, quartz or ceramics stop to be situated between
The electrode of matter, the metal hollow pipe are connect with blower, are aerated cooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811310125.9A CN110139457B (en) | 2018-11-06 | 2018-11-06 | Sub-vacuum low-temperature plasma on-line continuous material processing device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811310125.9A CN110139457B (en) | 2018-11-06 | 2018-11-06 | Sub-vacuum low-temperature plasma on-line continuous material processing device |
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| CN110139457A true CN110139457A (en) | 2019-08-16 |
| CN110139457B CN110139457B (en) | 2024-05-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110611986A (en) * | 2019-09-16 | 2019-12-24 | 南京珀斯佩特电子科技有限公司 | Low-temperature plasma flat plate type reciprocating intelligent processing equipment and use method |
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| CN202099616U (en) * | 2011-05-06 | 2012-01-04 | 宁波表面工程研究中心 | Film and fiber surface plasma continuous processing device |
| CN102390069A (en) * | 2011-10-28 | 2012-03-28 | 南京林业大学 | Atmospheric-pressure and low-temperature plasma continuous treatment device of wooden thin plates |
| CN102505447A (en) * | 2011-09-27 | 2012-06-20 | 东华大学 | Device and method for continuously processing fiber surface by atmospheric low temperature radio frequency plasma |
| CN103052251A (en) * | 2012-12-07 | 2013-04-17 | 常州中科常泰等离子体科技有限公司 | Cold plasma glow discharge generator under low vacuum state |
| CN104768316A (en) * | 2015-04-21 | 2015-07-08 | 南京苏曼等离子科技有限公司 | Large-discharge-interval normal temperature glow discharge low-temperature plasma material processing device |
| CN209593870U (en) * | 2018-11-06 | 2019-11-05 | 南京苏曼等离子科技有限公司 | Sub- vacuum low-temperature plasma on-line continuous material handling device |
-
2018
- 2018-11-06 CN CN201811310125.9A patent/CN110139457B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2080611A (en) * | 1980-06-21 | 1982-02-03 | Shinetsu Chemical Co | An apparatus for continuous treatment of a continuous-length material with low temperature plasma |
| US20090297409A1 (en) * | 2008-05-30 | 2009-12-03 | Buchanan Walter R | Discharge plasma reactor |
| CN202099616U (en) * | 2011-05-06 | 2012-01-04 | 宁波表面工程研究中心 | Film and fiber surface plasma continuous processing device |
| CN102505447A (en) * | 2011-09-27 | 2012-06-20 | 东华大学 | Device and method for continuously processing fiber surface by atmospheric low temperature radio frequency plasma |
| CN102390069A (en) * | 2011-10-28 | 2012-03-28 | 南京林业大学 | Atmospheric-pressure and low-temperature plasma continuous treatment device of wooden thin plates |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110611986A (en) * | 2019-09-16 | 2019-12-24 | 南京珀斯佩特电子科技有限公司 | Low-temperature plasma flat plate type reciprocating intelligent processing equipment and use method |
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| Publication number | Publication date |
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| CN110139457B (en) | 2024-05-24 |
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