CN110138371A - A kind of switching circuit and switch chip - Google Patents
A kind of switching circuit and switch chip Download PDFInfo
- Publication number
- CN110138371A CN110138371A CN201910407332.4A CN201910407332A CN110138371A CN 110138371 A CN110138371 A CN 110138371A CN 201910407332 A CN201910407332 A CN 201910407332A CN 110138371 A CN110138371 A CN 110138371A
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- Prior art keywords
- pipe unit
- switch pipe
- switch
- resistance
- transistor
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- 230000005540 biological transmission Effects 0.000 claims abstract description 26
- 230000005669 field effect Effects 0.000 claims abstract description 17
- 239000000126 substance Substances 0.000 claims 1
- 238000002955 isolation Methods 0.000 abstract description 13
- 238000003780 insertion Methods 0.000 abstract description 9
- 230000037431 insertion Effects 0.000 abstract description 8
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Abstract
The invention discloses a kind of switching circuit and switch chips, comprising: at least switching channels module all the way；The switching channels module includes at least three switch pipe units and a transmission lines；The first end of the transmission line is the input terminal of the switching channels module, and the second end of the transmission line is the output end of the switching channels module；The transmission line is equipped with interface；The first input end of each switch pipe unit is connected with an interface on transmission line, and a switch pipe unit is at most connected on an interface；Second input terminal external voltage source of each switch pipe unit.The structure that switching channels module switchs pipe unit parallel connections using at least three in the present invention, it is compact-sized rationally distributed, improve the performances such as Insertion Loss and the isolation of the switch being made of field effect transistor.
Description
Technical field
The present invention relates to electronic circuit technology field more particularly to a kind of switching circuits and switch chip.
Background technique
The switch being made of field effect transistor is simple with biasing networks, control electric current is small, driving circuit is simplified, switch
The advantages such as speed is fast.In addition, the realization of switch with field-effect transistors make one only several square millimeters of chip have it is more
Function, and there is very high performance, using convenient.
The performances such as the Insertion Loss of the switch of current field effect transistor composition and isolation are bad, influence field effect transistor and open
The use of pass.
Summary of the invention
The embodiment of the invention provides a kind of switching circuit and switch chips, it is intended to solve current field effect transistor composition
Switch Insertion Loss and the bad problem of isolation performance.
The first aspect of the embodiment of the present invention provides a kind of switching circuit characterized by comprising an at least way switch
Channel module；
The switching channels module includes at least three switch pipe units and a transmission lines；
The first end of the transmission line is the input terminal of the switching channels module, and the second end of the transmission line is described
The output end of switching channels module；The transmission line is equipped with interface；
The first input end of each switch pipe unit is connected with an interface on transmission line, and at most connects on an interface
Connect a switch pipe unit；Second input terminal external voltage source of each switch pipe unit.
In embodiments herein, when the switching circuit is including at least double switch channel module, the switch is logical
The input terminal of road module connects altogether.
In embodiments herein, the switch pipe unit includes transistor and resistance R1；
The drain electrode of the transistor is the first input end of the switch pipe unit, the source electrode ground connection of the transistor, institute
The grid for stating transistor is connected with the first end of the resistance R1, and the second end of the resistance R1 is the of the switch pipe unit
Two input terminals.
In embodiments herein, the switch pipe unit includes transistor and resistance R1；
In the interface for being connected to switch pipe unit, the output end with the switching channels module is apart from nearest interface institute
The switch pipe unit of connection further includes resistance R2；
The drain electrode of the transistor is the first input end of the switch pipe unit, the source electrode of the transistor and the electricity
The first end for hindering R2 is connected, the second end ground connection of the resistance R2, the first end of the grid of the transistor and the resistance R1
It is connected, the second end of the resistance R1 is the second input terminal of the switch pipe unit.
In embodiments herein, the transistor is field effect transistor.
In embodiments herein, the transmission line is microstrip line.
In embodiments herein, the switching channels module is 8, and the input terminal of 8 switching channels modules connects altogether.
It include 4 switch pipe units in each way switch channel module in embodiments herein, often on the way
Second input terminal of 4 switch pipe units connects a voltage source altogether, and the switch pipe unit connection in each switching channels module is only
Vertical voltage source.
The first aspect of the embodiment of the present invention provides a kind of switch chip, which is characterized in that opens including above-described
Powered-down road.
Few switching channels module all the way is equipped in the present invention, each switching channels module is using at least three switch pipe units
Structure in parallel, it is compact-sized rationally distributed, improve the isolation performance for the switch being made of field effect transistor, reduce by
The Insertion Loss performance of the switch of field effect transistor composition, improves the standing wave performance for the switch being made of field effect transistor.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to needed in the embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for ability
For the those of ordinary skill of domain, without any creative labor, it can also be obtained according to these attached drawings others
Attached drawing.
Fig. 1 is the structural schematic diagram for the switching circuit that one embodiment of the present of invention provides；
Fig. 2 is the structural schematic diagram for the eight throw switch circuit of hilted broadsword that one embodiment of the present of invention provides.
Specific embodiment
In order to make those skilled in the art more fully understand this programme, below in conjunction with attached in this programme embodiment
Figure, is explicitly described the technical solution in this programme embodiment, it is clear that described embodiment is this programme a part
Embodiment, instead of all the embodiments.Based on the embodiment in this programme, those of ordinary skill in the art are not being made
The range of this programme protection all should belong in every other embodiment obtained under the premise of creative work.
The specification and claims of this programme and term " includes " and other any deformations in above-mentioned attached drawing are
Refer to " including but not limited to ", it is intended that cover and non-exclusive include.In addition, term " first " and " second " etc. are for distinguishing
Different objects, not for description particular order.
Realization of the invention is described in detail below in conjunction with specific attached drawing:
Fig. 1 shows a kind of switching circuit provided by one embodiment of the invention, for ease of description, illustrates only and this
The relevant part of inventive embodiments, details are as follows:
As shown in Figure 1, switching circuit 1 provided by the embodiment of the present invention, including at least switching channels module 110 all the way.
The switching channels module 110 includes at least three switch pipe units 111 and a transmission lines.
The first end of the transmission line is the input terminal of the switching channels module 110, and the second end of the transmission line is
The output end of the switching channels module 110；The transmission line is equipped with interface.
The first input end of each switch pipe unit 111 is connected with an interface on transmission line, and on an interface most
One switch pipe unit 111 of multi-connection；Second input terminal external voltage source of each switch pipe unit 111.
In the present embodiment, the link position of switch pipe unit 111 and transmission line can according to need adjustment.
In the embodiment of the present invention, equipped at least switching channels module 110, each switching channels module 110 use extremely all the way
Few three switches pipe unit 111 structure in parallel, it is compact-sized rationally distributed, improve the switch being made of field effect transistor
Isolation performance, reduce the Insertion Loss performance for the switch being made of field effect transistor, improve and be made of field effect transistor
Switch standing wave performance.
In an embodiment of the present invention, when switching circuit is including at least double switch channel module 110, the switching channels
The input terminal of module 110 connects altogether.
In the present embodiment, when switching channels module 110 is two-way, single-pole double-throw switch (SPDT) is formed；Switching channels module 110
When for three tunnels, single-pole three-throw switch is formed；When switching channels module 110 is four tunnel, four throw switch of hilted broadsword is formed；... switch is logical
When road module 110 is eight tunnel, eight throw switch of hilted broadsword is formed.Switching channels module 110 either two-way, three tunnels or eight tunnels, often
110 structure of switching channels module all the way is all identical.
In an embodiment of the present invention, switch pipe unit 111 includes transistor and resistance R1；
The drain electrode of the transistor is the first input end of the switch pipe unit 111, and the source electrode of the transistor is grounded,
The grid of the transistor is connected with the first end of the resistance R1, and the second end of the resistance R1 is the switch pipe unit
111 the second input terminal.
In the present embodiment, resistance R1 is gate resistance.
In an embodiment of the present invention, switch pipe unit 111 includes transistor and resistance R1；
It is nearest with the output end of the switching channels module 110 distance in the interface for being connected to switch pipe unit 111
The switch pipe unit 111 that interface is connected further includes resistance R2；
The drain electrode of the transistor is the first input end of the switch pipe unit 111, the source electrode of the transistor and institute
The first end for stating resistance R2 is connected, the second end of resistance R2 ground connection, and the of the grid of the transistor and the resistance R1
One end is connected, and the second end of the resistance R1 is the second input terminal of the switch pipe unit 111.
In the present embodiment, resistance R2 is load.
As an example, if same there are four interfaces, then often there are four pipe unit 111 is switched in switching channels module 110
A interface connects a switch pipe unit 111, further includes resistance R2 on the 4th switch pipe unit 111.
In a particular application, switch output matching status is divided into reflective and two kinds absorption.Reflective switch is in OFF state
When output in open circuit or short-circuit condition, signal is all reflected back to realization high-isolation；And absorption switch OFF state
When will be outputted on resistance, the output standing wave realized, this switch is conducive to the stabilization of entire microwave system.
If with the output end of the switching channels module 110 on the switch pipe unit 111 that nearest interface is connect
Resistance R2 is not connected, then switch is in reflective state.
If with the output end of the switching channels module 110 on the switch pipe unit 111 that nearest interface is connect
There is connection resistance R2, then switch is in absorption state.
In an embodiment of the present invention, transistor is field effect transistor.
In an embodiment of the present invention, transmission line is microstrip line.
In an embodiment of the present invention, switching channels module 110 is 8, and the input terminal of 8 switching channels modules 110 is total
It connects.
It in an embodiment of the present invention, include 4 switch pipe units 111 in each way switch channel module 110, it is each
Second input terminal of 4 switch pipe units 111 of road connects a voltage source, the switch in each switching channels module 110 altogether
Pipe unit 111 connects independent voltage source.
In an embodiment of the present invention, switch pipe unit is connected on the transmission line in each way switch channel module 110
The position of 111 interface is consistent as far as possible, can be by the position of fine tuning interface, to reach each switching channels module
The performance indicators such as Insertion Loss and isolation are consistent.
In a particular application, switching channels module 110 is 8, includes 4 in each way switch channel module 110 and opens
Close pipe unit 111.
Usual low frequency often uses frequency range, switchs to obtain comparatively ideal Insertion Loss and isolation, and general use goes here and there and mix knot
Structure.But it will increase the differential loss of switch in off position to submillimeter wave frequency range serial transistor in millimeter wave.Parallel transistor can
To improve the isolation between port, so comprehensively considering the requirement of high frequency high-isolation low-insertion loss of the present invention, comprehensively considers and pass through
Emulation, which is determined, realizes circuit with the topological form of single channel parallel connection level Four field effect transistor.And usually with single field effect transistor
The isolation performance of the on of pipe, off two states is unsatisfactory, therefore the design uses the structure of level Four parallel connection, to obtain
Preferable isolation and input and output standing wave performance.Also reduce the insertion loss of each switching channels module 110.Preferably every
The enhancing of the isolation between each way switch channel module 110 is referred to from degree.
As shown in Fig. 2, in order to make it easy to understand, being illustrated by taking eight throw switch of hilted broadsword as an example:
Eight throw switch of hilted broadsword, switching channels module 110 is 8, and 8 way switch channel module, 110 structure is all identical.It is each
It include 4 switch pipe units 111 in way switch channel module 110, first three switch pipe unit 111 includes transistor and resistance
R1；The drain electrode of the transistor is the first input end of the switch pipe unit 111, and the source electrode ground connection of the transistor is described
The grid of transistor is connected with the first end of the resistance R1, and the second end of the resistance R1 is the switch pipe unit 111
Second input terminal.
4th switch pipe unit 111 further includes resistance R2；The drain electrode of the transistor is the switch pipe unit 111
First input end, the source electrode of the transistor are connected with the first end of the resistance R2, the second end ground connection of the resistance R2, institute
The grid for stating transistor is connected with the first end of the resistance R1, and the second end of the resistance R1 is the switch pipe unit 111
The second input terminal.
Power supply V1 be low level, power supply V2-V8 be high level when, FET11~FET14 be reverse blocking state, FET21~
When FET24 ... FET81~FET84 is in forward conduction state；Then the effect transistor of channel 2-8 is short-circuit, by 1/4 λ
Impedance transformation, the impedance at the common node of channel 2-8 is infinity, from without power loss；And channel 1 is not influenced
Power transmission, perfect condition lower channel 1 decays to 0, is isolated into infinity.Similarly, the on state of other branches is also same
As channel 1.
A kind of switch chip provided by the embodiment of the present invention, including above-described switching circuit 1.
The above, the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although referring to before
Stating embodiment, invention is explained in detail, those skilled in the art should understand that: it still can be to preceding
Technical solution documented by each embodiment is stated to modify or equivalent replacement of some of the technical features；And these
It modifies or replaces, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution.
Claims (9)
1. a kind of switching circuit characterized by comprising at least switching channels module all the way；
The switching channels module includes at least three switch pipe units and a transmission lines；
The first end of the transmission line is the input terminal of the switching channels module, and the second end of the transmission line is the switch
The output end of channel module；The transmission line is equipped with interface；
The first input end of each switch pipe unit is connected with an interface on transmission line, and at most connects one on an interface
A switch pipe unit；Second input terminal external voltage source of each switch pipe unit.
2. switching circuit as described in claim 1, which is characterized in that the switching circuit includes at least double switch channel mould
When block, the input terminal of the switching channels module connects altogether.
3. switching circuit as described in claim 1, which is characterized in that the switch pipe unit includes transistor and resistance R1；
The drain electrode of the transistor is the first input end of the switch pipe unit, the source electrode ground connection of the transistor, the crystalline substance
The grid of body pipe is connected with the first end of the resistance R1, and the second end of the resistance R1 is the second defeated of the switch pipe unit
Enter end.
4. switching circuit as described in claim 1, which is characterized in that the switch pipe unit includes transistor and resistance R1；
In the interface for being connected to switch pipe unit, it is connect with the output end of the switching channels module apart from nearest interface
Switch pipe unit further include resistance R2；
The drain electrode of the transistor is the first input end of the switch pipe unit, the source electrode of the transistor and the resistance R2
First end be connected, the second end of resistance R2 ground connection, the grid of the transistor is connected with the first end of the resistance R1,
The second end of the resistance R1 is the second input terminal of the switch pipe unit.
5. switching circuit as described in claim 3 or 4, which is characterized in that the transistor is field effect transistor.
6. such as switching circuit described in any one of claim 1 to 5, which is characterized in that the transmission line is microstrip line.
7. such as switching circuit described in any one of claim 1 to 5, which is characterized in that the switching channels module is 8,8
The input terminal of switching channels module connects altogether.
8. switching circuit as claimed in claim 7, which is characterized in that include 4 switches in each way switch channel module
Pipe unit, per on the way 4, the second input terminal of switch pipe units connects a voltage source altogether, in each switching channels module
It switchs pipe unit and connects independent voltage source.
9. a kind of switch chip, which is characterized in that including switching circuit as claimed in any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910407332.4A CN110138371A (en) | 2019-05-15 | 2019-05-15 | A kind of switching circuit and switch chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910407332.4A CN110138371A (en) | 2019-05-15 | 2019-05-15 | A kind of switching circuit and switch chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110138371A true CN110138371A (en) | 2019-08-16 |
Family
ID=67574569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910407332.4A Pending CN110138371A (en) | 2019-05-15 | 2019-05-15 | A kind of switching circuit and switch chip |
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| Country | Link |
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| CN (1) | CN110138371A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5159297A (en) * | 1990-05-31 | 1992-10-27 | Fujitsu Limited | Switching circuit having constant impedance regardless switching operation thereof |
| US20030132814A1 (en) * | 2002-01-15 | 2003-07-17 | Nokia Corporation | Circuit topology for attenuator and switch circuits |
| US20100097119A1 (en) * | 2008-10-22 | 2010-04-22 | The Boeing Company | Gallium nitride switch methodology |
| CN107069152A (en) * | 2017-03-21 | 2017-08-18 | 南京米乐为微电子科技有限公司 | A kind of integrated single-pole double-throw switch (SPDT) of high-power high-isolation of millimeter wave ultra-wideband |
| CN108717943A (en) * | 2018-03-30 | 2018-10-30 | 中国科学院微电子研究所 | HEMT and single-pole double-throw switch (SPDT) circuit |
-
2019
- 2019-05-15 CN CN201910407332.4A patent/CN110138371A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5159297A (en) * | 1990-05-31 | 1992-10-27 | Fujitsu Limited | Switching circuit having constant impedance regardless switching operation thereof |
| US20030132814A1 (en) * | 2002-01-15 | 2003-07-17 | Nokia Corporation | Circuit topology for attenuator and switch circuits |
| US20100097119A1 (en) * | 2008-10-22 | 2010-04-22 | The Boeing Company | Gallium nitride switch methodology |
| CN107069152A (en) * | 2017-03-21 | 2017-08-18 | 南京米乐为微电子科技有限公司 | A kind of integrated single-pole double-throw switch (SPDT) of high-power high-isolation of millimeter wave ultra-wideband |
| CN108717943A (en) * | 2018-03-30 | 2018-10-30 | 中国科学院微电子研究所 | HEMT and single-pole double-throw switch (SPDT) circuit |
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Application publication date: 20190816 |
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