CN110137156B - Hafnium silicate-based metal oxide semiconductor capacitor device and preparation method thereof - Google Patents
Hafnium silicate-based metal oxide semiconductor capacitor device and preparation method thereof Download PDFInfo
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- CN110137156B CN110137156B CN201910291852.3A CN201910291852A CN110137156B CN 110137156 B CN110137156 B CN 110137156B CN 201910291852 A CN201910291852 A CN 201910291852A CN 110137156 B CN110137156 B CN 110137156B
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- hafnium silicate
- oxide layer
- capacitor device
- metal oxide
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052735 hafnium Inorganic materials 0.000 title claims abstract description 34
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000003990 capacitor Substances 0.000 title claims abstract description 17
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 17
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 3
- 238000000861 blow drying Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 238000005477 sputtering target Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 27
- 239000000463 material Substances 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses a metal oxide semiconductor capacitor device based on hafnium silicate and a preparation method thereof, wherein the metal oxide semiconductor capacitor device comprises a lower electrode, a substrate, an oxide layer and an upper electrode; the lower part of the substrate is provided with a lower electrode; an oxide layer is arranged on the upper part of the substrate; an upper electrode is arranged on the oxide layer; the oxide layer is hafnium silicate; the preparation method comprises the following specific steps: a) Cleaning the substrate; b) Preparing an oxide film; c) An upper electrode and a lower electrode layer are prepared. The invention adopts the hafnium silicate with high dielectric constant material to prepare the semiconductor device, has better radiation resistance, and meets the requirement that the semiconductor device needs to stably and reliably work in a radiation environment for a long time; the power consumption of the device is reduced, and the electric leakage of the device is reduced under the same equivalent thickness; the preparation process is compatible with the traditional semiconductor process while the radiation resistance is improved, and the preparation cost is controlled.
Description
Technical Field
The invention relates to a technology in the field of microelectronic devices, in particular to a metal oxide semiconductor capacitor device (MOSCAP device) based on high-k material hafnium silicate in the field of electronic devices and a preparation method thereof.
Background
With the rapid development of space technology, space strategy weapons and microelectronics technologies, more and more electronic components are adopted by space products. Most of these semiconductor devices (including: semiconductor discrete devices, integrated circuits, etc.) are radiation sensitive devices, and the radiation environment can have varying degrees of impact on the performance of these devices, even rendering them ineffective.
The space radiation environment is mainly from cosmic rays, solar flare radiation, the inner and outer Fanai lun radiation bands around the earth, etc. Although the radiation dose rate is very low, as the radiation dose rate is a cumulative effect, when the dose rate is accumulated to a certain value, the performance of the electronic device is changed, and when the dose rate is serious, the device is completely disabled, so that the electronic device cannot work normally.
With the improvement of the integration level of the device and the reduction of the working voltage, the sensitivity of the device to the single event effect is greatly improved, while the traditional silicon dioxide-based semiconductor device has lower radiation resistance and is not enough to stably and reliably work in a radiation environment for a long time. Therefore, for various radiation effects, reinforcing measures are required to be taken in various links such as material, circuit design, structural design, process manufacturing and packaging of the device, so that the device has certain radiation resistance. The radiation-resistant reinforced device can be applied to space radiation environment to improve the reliability and service life of a spacecraft, and can be applied to strategic weapons to improve the efficiency and the burst protection capability of the spacecraft.
Disclosure of Invention
The invention aims at: aiming at the defects of the traditional silicon dioxide-based semiconductor device, the MOSCAP device based on the high-k material hafnium silicate and the preparation method thereof are provided, so that the radiation resistance of the semiconductor device can be improved, the requirement that the semiconductor device needs to stably and reliably work in a radiation environment for a long time is met, meanwhile, the process is compatible with the traditional process, and the preparation cost is controlled.
The technical scheme of the invention is as follows: a metal oxide semiconductor capacitor device based on hafnium silicate includes a lower electrode, a substrate, an oxide layer and an upper electrode; the lower part of the substrate is provided with a lower electrode; an oxide layer is arranged on the upper part of the substrate; an upper electrode is arranged on the oxide layer; the oxide layer is hafnium silicate.
Preferably, the oxide layer is a hafnium silicate film, and the thickness of the film is 200-300nm.
Preferably, a plurality of upper electrodes are arranged on the oxide layer in a displaying way.
Preferably, the upper electrode is a columnar metal aluminum film layer, the thickness is 800-900nm, and the area is 1.4-1.8X10 -9cm2.
Preferably, the substrate is a silicon film layer with a thickness of 280-320 μm.
A preparation method of a metal oxide semiconductor capacitor device based on hafnium silicate comprises the following specific steps:
a) Cleaning a substrate
Immersing the substrate completely in an aqueous solution containing 2% -5% of hydrofluoric acid for 30-120 seconds, flushing the substrate with deionized water to remove residual impurities, and blow-drying with nitrogen;
b) Preparation of oxide film
Sputtering target hafnium silicate onto a substrate by a sputtering method, wherein the purity of the target hafnium silicate is not lower than 99.99%, the sputtering atmosphere is argon, and the pressure is not higher than 10 -5 Pa; after sputtering, the substrate is annealed in nitrogen atmosphere, wherein the annealing temperature is 700-800 ℃ and the annealing time is 30-40 minutes;
c) Preparation of upper and lower electrode layers
Evaporating metallic aluminum onto the oxide layer and the substrate by electron beam evaporation to form an upper electrode and a lower electrode respectively, wherein the thickness of the electrodes is 800-900nm.
The invention has the advantages that:
1. Compared with the traditional silicon dioxide-based semiconductor device, the semiconductor device prepared from the high dielectric constant material hafnium silicate has better radiation resistance, and meets the requirement that the semiconductor device needs to stably and reliably work in a radiation environment for a long time;
2. Compared with the traditional silicon dioxide-based semiconductor device, the application of the high-dielectric-constant material hafnium silicate reduces the power consumption of the device, and reduces the electric leakage of the device under the same equivalent thickness;
3. The preparation process is compatible with the traditional semiconductor process while the radiation resistance is improved, and the preparation cost is controlled.
Drawings
The invention is further described below with reference to the accompanying drawings and examples:
FIG. 1 is a schematic diagram of a hafnium silicate based metal oxide semiconductor capacitor device;
FIG. 2 is a graph of the drift of flat band voltage of a hafnium silicate based metal oxide semiconductor capacitor device at a radiation dose of 0-75 Gy;
Wherein: 1. an upper electrode; 2. an oxide layer; 3. a substrate; 4. and a lower electrode.
Detailed Description
Examples:
as shown in fig. 1-2, a hafnium silicate based metal oxide semiconductor capacitor device includes a lower electrode 4, a substrate 3, an oxide layer 2, and an upper electrode 1; the lower part of the substrate 3 is provided with a lower electrode 4; an oxide layer 2 is arranged on the upper part of the substrate 3; an upper electrode 1 is arranged on the oxide layer 2; the oxide layer 2 is hafnium silicate with high dielectric constant material (called high-k material hafnium silicate); the oxide layer 2 is a high-k material hafnium silicate film, and the thickness of the film is 280nm; a plurality of upper electrodes 1 are arranged on the oxide layer 2 in a displaying way; the upper electrode 1 is a cylindrical metal aluminum film layer, the thickness is 830nm, and the area is 1.6X10 -9cm2; the substrate 3 is a silicon film layer with the thickness of 530nm.
A preparation method of a metal oxide semiconductor capacitor device based on hafnium silicate comprises the following specific steps:
a) Cleaning a substrate
Immersing the substrate completely in an aqueous solution containing 4% hydrofluoric acid for 60 seconds, flushing the substrate with deionized water to remove residual impurities, and blow-drying with nitrogen;
b) Preparation of oxide film
Sputtering target hafnium silicate onto a substrate by a sputtering method, wherein the purity of the target hafnium silicate is not lower than 99.99%, the sputtering atmosphere is argon, and the pressure is not higher than 10 -5 Pa; after sputtering, the substrate is annealed in nitrogen atmosphere, wherein the annealing temperature is 760 ℃, and the annealing time is 35 minutes;
c) Preparation of upper and lower electrode layers
Evaporating metal aluminum onto the oxide layer and the substrate by electron beam evaporation to form an upper electrode and a lower electrode respectively, wherein the thickness of the electrodes is 800-900nm; the upper electrode area was 1.6X10 -9cm2.
As shown in FIG. 2, the flatband voltage drift of the MOSCAP device of the embodiment under a Co-60 radiation source has a radiation dose rate of about 556 mGy/s and a total dose of about 75Gy, the sensitivity of the MOSCAP device of the embodiment to radiation is about 4.5 mV/Gy, and the sensitivity of the conventional silicon dioxide-based semiconductor device to radiation is about 30 mV/Gy, so that the sensitivity of the semiconductor device to radiation is greatly reduced, and the requirement of the semiconductor device for stable and reliable operation under a radiation environment for a long time is met.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations which can be accomplished by persons skilled in the art without departing from the spirit and technical spirit of the present invention shall be covered by the appended claims.
Claims (6)
1. A method for manufacturing a hafnium silicate based metal oxide semiconductor capacitor device, comprising: the method comprises the following specific steps:
a) Cleaning a substrate
Immersing the substrate completely in an aqueous solution containing 2% -5% of hydrofluoric acid for 30-120 seconds, washing the substrate with deionized water to remove residual impurities, and blow-drying with nitrogen, wherein the substrate is a silicon film layer with the thickness of 280-320 mu m;
b) Preparation of oxide film
Sputtering target hafnium silicate onto a substrate by a sputtering method, wherein the purity of the target hafnium silicate is not lower than 99.99%, the sputtering atmosphere is argon, and the pressure is not higher than 10 -5 Pa; after sputtering, the substrate is annealed in nitrogen atmosphere at 700-800 deg.c for 30-40 min and with film thickness of 200-300nm;
c) Preparation of upper and lower electrode layers
And evaporating metal aluminum onto the oxide layer and the substrate by electron beam evaporation to form an upper electrode and a lower electrode respectively, wherein the upper electrode is a cylindrical metal aluminum film layer, the thickness of the electrode is 800-900nm, and the area of the upper electrode is 1.6X10 -9cm2.
2. A hafnium silicate based metal oxide semiconductor capacitor device, characterized by: the method of claim 1, comprising a bottom electrode, a substrate, an oxide layer, and a top electrode; the lower part of the substrate is provided with a lower electrode; an oxide layer is arranged on the upper part of the substrate; an upper electrode is arranged on the oxide layer; the oxide layer is hafnium silicate.
3. A hafnium silicate based metal oxide semiconductor capacitor device according to claim 2 wherein: the oxide layer is a hafnium silicate film, and the thickness of the film is 200-300nm.
4. A hafnium silicate based metal oxide semiconductor capacitor device according to claim 2 wherein: a plurality of upper electrodes are arranged on the oxide layer in a displaying way.
5. A hafnium silicate based metal oxide semiconductor capacitor device according to claim 2 wherein: the upper electrode is a columnar metal aluminum film layer with the thickness of 800-900nm.
6. A hafnium silicate based metal oxide semiconductor capacitor device according to claim 2 wherein: the substrate is a silicon film layer with the thickness of 280-320 mu m.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910291852.3A CN110137156B (en) | 2019-04-12 | 2019-04-12 | Hafnium silicate-based metal oxide semiconductor capacitor device and preparation method thereof |
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| CN201910291852.3A CN110137156B (en) | 2019-04-12 | 2019-04-12 | Hafnium silicate-based metal oxide semiconductor capacitor device and preparation method thereof |
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| CN110137156A CN110137156A (en) | 2019-08-16 |
| CN110137156B true CN110137156B (en) | 2024-09-13 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226044A (en) * | 2014-05-29 | 2016-01-06 | 联华电子股份有限公司 | The method of integrated circuit and formation integrated circuit |
| CN209747510U (en) * | 2019-04-12 | 2019-12-06 | 西交利物浦大学 | Metal oxide semiconductor capacitor device based on hafnium silicate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6680521B1 (en) * | 2003-04-09 | 2004-01-20 | Newport Fab, Llc | High density composite MIM capacitor with reduced voltage dependence in semiconductor dies |
| JP4722501B2 (en) * | 2004-01-29 | 2011-07-13 | 三星電子株式会社 | Multilayer dielectric structure for semiconductor device, semiconductor, and manufacturing method thereof |
| JP2007067266A (en) * | 2005-09-01 | 2007-03-15 | Toshiba Corp | Semiconductor device |
| US20080315430A1 (en) * | 2007-06-22 | 2008-12-25 | Qimonda Ag | Nanowire vias |
| JP2009170439A (en) * | 2008-01-10 | 2009-07-30 | Panasonic Corp | Formation method of gate insulation film |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226044A (en) * | 2014-05-29 | 2016-01-06 | 联华电子股份有限公司 | The method of integrated circuit and formation integrated circuit |
| CN209747510U (en) * | 2019-04-12 | 2019-12-06 | 西交利物浦大学 | Metal oxide semiconductor capacitor device based on hafnium silicate |
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