CN110129775B - 一种在硅纳米线阵列上形成Ag颗粒的方法 - Google Patents
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Abstract
本发明涉及一种在硅纳米线阵列上形成Ag颗粒的方法，包括如下步骤：步骤一、制备硅纳米线阵列，然后将制备好的硅纳米线阵列放置在培养皿中；步骤二、将放置有硅纳米线阵列基板的培养皿移至振荡台，设定振动参数；步骤三、将硝酸盐溶液均匀滴加在硅纳米线阵列基板上；步骤四、持续将氨水均匀滴加在硅纳米线阵列基板上；步骤五、将乙醛均匀滴加在硅纳米线阵列基板上；步骤六、使用清洗液清洗硅纳米线阵列基板，该在硅纳米线阵列上形成Ag颗粒的方法，操作简单，使用的仪器简单，制备环境要求低，对材料的要求低，而且制备时间短。
Description
技术领域
本发明属于红外探测技术领域，具体涉及一种在硅纳米线阵列上形成Ag颗粒的方法。
背景技术
纳米材料受到极大的关注，主要是由于其特殊的物理性质。因为当材料的尺寸减小至纳米级别的时候，小尺寸效应、量子尺寸效应、宏观量子隧道效应、库仑阻塞效应、表面效应等块体材料并不具备的特殊物理性质便会表现出来。作为地球上元素含量排行第二的硅，是极其重要的半导体材料，在当下的信息时代已被广泛的应用于各种通讯器材及微电子元件之中。然而硅的禁带宽度仅有1.12eV，非常的窄小，这使得其在器件应用过程当中受到了限制。如果将半导体材料硅尺寸纳米化，使其具有纳米材料特有的优异物理性能，这无疑将使得其产生更高的应用价值。
硅纳米线是一种新型的一维半导体纳米材料，线体直径一般在10nm左右，内晶核是单晶硅，外层有一SiO2包覆层，由于自身所特有的光学、电学性质如量子限制效应及库仑阻塞效应引起了科技界的广泛关注，在微电子电路中的逻辑门和计数器、场发射器件等纳米电子器件、纳米传感器及辅助合成其它纳米材料的模板中的应用研究已取得了一定的进展。
硅纳米线阵列上形成银颗粒具有很好的红外隐身作用，红外隐身技术在单兵目标、地面武器、空中战机等领域有非常重要应用。传统涂层、屏蔽和遮挡等方法因缺乏有效的能量转换或转移途径而存在红外暴露风险。通过对硅纳米线阵列修饰银纳米粒子，借助其表面等离激元共振(SPR)增强光热转换，可以提升结构隐身性能。如何在硅纳米线上设置Ag颗粒对于隐身技术发展有重要的意义。
发明内容
本发明的目的是提供一种在硅纳米线阵列上形成Ag颗粒的方法，包括如下步骤：
步骤一、制备硅纳米线阵列，然后将制备好的硅纳米线阵列放置在培养皿中；
步骤二、将放置有硅纳米线阵列基板的培养皿移至振荡台，设定振动参数；
步骤三、将硝酸盐溶液均匀滴加在硅纳米线阵列基板上；
步骤四、持续将氨水均匀滴加在硅纳米线阵列基板上；
步骤五、将乙醛均匀滴加在硅纳米线阵列基板上；
步骤六、使用清洗液清洗硅纳米线阵列基板。
所述步骤一中制备硅纳米线阵列的体积为1cm×1cm。
所述步骤三中的硝酸盐溶液的浓度为0.001mol/L。
所述步骤三中的硝酸盐溶液的滴入量为0.5ml。
所述步骤四中使用的氨水是体积比为2％的氨水。
所述步骤三中的硝酸盐溶液为AgNO3溶液。
所述步骤二中设定振动参数是振动位移为2mm，振动频率为100Hz。
所述步骤六中清洗硅纳米线阵列基板使用的清洗液为去离子水。
所述硅纳米线阵列的基板为聚酰亚胺制成。
本发明的有益效果：本发明提供的这种在硅纳米线阵列上形成Ag颗粒的方法，操作简单，使用的仪器简单，制备环境要求低，对材料的要求低，而且制备时间短。
以下将结合附图对本发明做进一步详细说明。
附图说明
图1是在硅纳米线阵列上形成Ag颗粒的示意图。
图2是硅纳米线阵列形成的Ag颗粒效果图。
具体实施方式
为进一步阐述本发明达成预定目的所采取的技术手段及功效，以下结合附图及实施例对本发明的具体实施方式、结构特征及其功效，详细说明如下。
实施例1
本实施例提供了一种如图1所示的在硅纳米线阵列上形成Ag颗粒的方法，包括如下步骤：
步骤一、制备硅纳米线阵列，然后将制备好的硅纳米线阵列放置在培养皿中，其中，制备硅纳米线阵列的体积为1cm×1cm；
步骤二、将放置有硅纳米线阵列基板的培养皿移至振荡台，设定振动参数，设定振动参数是振动位移为2mm，振动频率为100Hz；整个制备过场一直处于振动状态，这样，一方面，可以使得下述的制备过程，能够充分反应硝酸盐溶液中的Ag离子,另一方面，使得所生产的Ag颗粒能够附着于硅纳米线的中下部；
步骤三、将硝酸盐溶液均匀滴加在硅纳米线阵列基板上，硝酸盐溶液为AgNO3溶液，AgNO3溶液的浓度为0.001mol/L，滴入量为0.5ml，硝酸盐溶液的滴入量尤为重要，如果过量会产生大片的银层附着于硅纳米线上，而不是Ag颗粒附着于硅纳米线上；
步骤四、持续将氨水均匀滴加在硅纳米线阵列基板上，所滴加的氨水是体积比为2％的氨水，滴加氨水首先会出现浑浊的沉淀物，继续滴加氨水，沉淀物会慢慢溶解，持续滴加氨水，知道沉淀物完全溶解为止；
步骤五、将乙醛均匀滴加在硅纳米线阵列基板上，所加入的乙醛的溶液的浓度0.001mol/L，滴入量为0.25ml；
步骤六、使用清洗液清洗硅纳米线阵列基板，清洗硅纳米线阵列基板使用的清洗液为去离子水。
如图2所示为使用上述方法制备的硅纳米线阵列形成的Ag颗粒最终效果图。
另外需要说明的是，硅纳米线可以通过下述方式进行制备：将单晶硅片清洗干净后放入浓度为5％的HF溶液中浸泡3min后，接着置于银沉积液中浸泡60S，接着再置于蚀刻液中浸泡30min，其中银沉积液和蚀刻液中的HF浓度均为4.8mol/L，蚀刻液中H2O2浓度为0.4mol/L，银沉积液中的AgNO3浓度为0.01mol/L HF的浓度为4.8mol/L。
综上所述，该在硅纳米线阵列上形成Ag颗粒的方法，操作简单，使用的仪器简单，制备环境要求低，对材料的要求低，而且制备时间短。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。
Claims (8)
1.一种在硅纳米线阵列上形成Ag颗粒的方法，其特征在于，包括如下步骤：
步骤一、制备硅纳米线阵列，然后将制备好的硅纳米线阵列放置在培养皿中；
步骤二、将放置有硅纳米线阵列基板的培养皿移至振荡台，设定振动参数；
步骤三、将硝酸盐溶液均匀滴加在硅纳米线阵列基板上；其中，硝酸盐溶液具体为AgNO3溶液；
步骤四、持续将氨水均匀滴加在硅纳米线阵列基板上；
步骤五、将乙醛均匀滴加在硅纳米线阵列基板上；
步骤六、使用清洗液清洗硅纳米线阵列基板。
2.如权利要求1所述的一种在硅纳米线阵列上形成Ag颗粒的方法，其特征在于：所述步骤一中制备硅纳米线阵列的体积为1cm×1cm。
3.如权利要求1所述的一种在硅纳米线阵列上形成Ag颗粒的方法，其特征在于：所述步骤三中的硝酸盐溶液的浓度为0.001mol/L。
4.如权利要求3所述的一种在硅纳米线阵列上形成Ag颗粒的方法，其特征在于：所述步骤三中的硝酸盐溶液的滴入量为0.5ml。
5.如权利要求1所述的一种在硅纳米线阵列上形成Ag颗粒的方法，其特征在于：所述步骤四中使用的氨水是体积比为2％的氨水。
6.如权利要求1所述的一种在硅纳米线阵列上形成Ag颗粒的方法，其特征在于：所述步骤二中设定振动参数是振动位移为2mm，振动频率为100Hz。
7.如权利要求1所述的一种在硅纳米线阵列上形成Ag颗粒的方法，其特征在于：所述步骤六中清洗硅纳米线阵列基板使用的清洗液为去离子水。
8.如权利要求1所述的一种在硅纳米线阵列上形成Ag颗粒的方法，其特征在于：所述硅纳米线阵列的基板为聚酰亚胺制成。
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