CN110112182A - OLED display panel and preparation method - Google Patents
OLED display panel and preparation method Download PDFInfo
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- CN110112182A CN110112182A CN201910283989.4A CN201910283989A CN110112182A CN 110112182 A CN110112182 A CN 110112182A CN 201910283989 A CN201910283989 A CN 201910283989A CN 110112182 A CN110112182 A CN 110112182A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/822—Cathodes characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
A kind of OLED display panel and preparation method, including underlay substrate, anode metal layer, pixel defining layer, OLED luminescent layer, cathode metal layer and thin-film encapsulation layer, the pixel defining layer is equipped with multiple first openings, multiple first openings limit multiple pixel regions respectively on the underlay substrate and the anode metal layer, and multiple OLED luminescent layers are set in corresponding multiple pixel regions；The OLED display panel further includes cathode connecting line, the pattern that the cathode metal layer is formed includes cathodic region and without cathodic region, the cathode metal layer in the cathodic region is covered on the OLED luminescent layer and the cathode connecting line, and the no cathodic region is multiple through-holes in array distribution.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of OLED display panels and preparation method.
Background technique
Organic Light Emitting Diode (organic light-emitting diode, OLED) has from main light emission, work temperature
It spends that range is wide, fast response time, the advantages that visual angle is wide, luminous efficiency is high, is known as follow-on display technology.In small-medium size
In oled panel, for wider array of colour gamut and better light extraction efficiency, it is micro- to generate that cathode is designed to a kind of translucent film layer
Chamber effect.Cathode is applied in the face OLED of CUP (shielding lower camera) technology, this translucent film layer can cause camera
Interference.The prior art blocks cathode using high-precision metal mask in order to avoid this interference, raw in camera area
At the cathode of specific pattern, common metal mask is then changed into other regions and forms another part cathode.However, this side
On the one hand method needs to carry out cathode evaporation twice, increase the production cycle；On the other hand it needs to use when being deposited first time
High-precision metal mask increases the cost of equipment, improves the difficulty of vapor deposition, reduces the yield of product.
In conclusion existing OLED display panel and preparation method, due to the camera skill in the case where cathode to be applied to screen
When art, needs to carry out cathode evaporation twice, increase the production cycle of OLED device.
Summary of the invention
The present invention provides a kind of OLED display panel and preparation method, and the camera under display screen can be protected from cathode
The interference of translucent film layer, to solve existing liquid crystal display panel, due to OLED display panel and preparation method, due to inciting somebody to action
When cathode is applied to shield lower camera technology, needs to carry out cathode evaporation twice, increase the skill of the production cycle of OLED device
Art problem.
To solve the above problems, technical solution provided by the invention is as follows:
The present invention provides a kind of OLED display panel, including underlay substrate, anode metal layer, pixel defining layer, OLED hair
Photosphere, cathode metal layer and thin-film encapsulation layer, the pixel defining layer are equipped with multiple first openings, and multiple described first open
Mouth limits multiple pixel regions respectively on the underlay substrate and the anode metal layer, and multiple OLED luminescent layers are set
In in corresponding multiple pixel regions；
Wherein, the OLED display panel further includes cathode connecting line, and the pattern that the cathode metal layer is formed includes yin
Polar region and without cathodic region, the cathode metal layer in the cathodic region is covered in the OLED luminescent layer and the cathode connects
In wiring, the no cathodic region is multiple through-holes in array distribution.
According to one preferred embodiment of the present invention, the shape of the OLED luminescent layer corresponding sub-pixel is octagon, multiple
The corresponding multiple sub-pixels of the through-hole are staggered, and the shape of the through-hole is octagon.
According to one preferred embodiment of the present invention, the thickness of the pixel defining layer is greater than the OLED luminescent layer, the yin
The sum of three's thickness of pole metal layer and the thin-film encapsulation layer.
According to one preferred embodiment of the present invention, the material of the cathode metal layer is indium-zinc oxide, indium tin oxide, zinc
One of oxide is a variety of, and the material of the pixel defining layer is organic photoresist.
The present invention also provides a kind of preparation methods of OLED display panel, which comprises
S10 provides a underlay substrate, spaced multiple anode metal layers is formed on the underlay substrate, in institute
State one organic photoresist layer of deposition in underlay substrate and multiple anode metal layers；
S20 carries out patterned process to organic photoresist layer using halftone mask, obtains pixel defining layer, described
Pixel defining layer is equipped with multiple first openings, and multiple first openings are on the underlay substrate and the anode metal layer
Multiple pixel regions are limited respectively；
S30 forms an absciss layer to be stripped on the top surface of the pixel defining layer；
S40, makes OLED luminescent layer in the pixel region, and the OLED luminescent layer is located at the anode metal layer
On；
S50 successively makes cathode metal layer and thin-film encapsulation layer by vapor deposition mode on the underlay substrate；
S60, by the absciss layer to be stripped and the part cathode metal layer being covered on the absciss layer to be stripped and part
The thin-film encapsulation layer is removed by removing mode, retains the remaining cathode metal layer and the thin-film encapsulation layer,
Finally obtain the OLED display panel.
According to one preferred embodiment of the present invention, the step S30 further include:
S301, deposits an absciss layer to be stripped on the surface of the pixel defining layer, and the absciss layer to be stripped includes described in covering
The part of the top surface portion of pixel defining layer and several first openings in the cladding pixel defining layer；
S302 is patterned processing to the absciss layer to be stripped, removes and coats the pixel definition on the absciss layer to be stripped
The part of several first openings on layer, retains the portion that the top surface of the pixel defining layer is covered on the absciss layer to be stripped
Point.
According to one preferred embodiment of the present invention, the material of the absciss layer to be stripped has, and distillation occurs under specific condition, splits
Solution, liquefaction, dissolution or other similar phenomenas property.
According to one preferred embodiment of the present invention, in the step S50, the thickness of the pixel defining layer is greater than the OLED
The sum of luminescent layer, the cathode metal layer and three's thickness of the thin-film encapsulation layer.
According to one preferred embodiment of the present invention, in the step S60, the removing mode includes laser irradiation, etching solution
One of dissolution and heating or various ways.
According to one preferred embodiment of the present invention, in the step S60, the pattern packet of the remaining cathode metal layer formation
It includes cathodic region and without cathodic region, the cathode metal layer in the cathodic region is covered in the OLED luminescent layer and cathode connects
In wiring, the no cathodic region is multiple through-holes in array distribution；The shape of the OLED luminescent layer corresponding sub-pixel is positive
Octagon, the corresponding multiple sub-pixels of multiple through-holes are staggered, and the shape of the through-hole is octagon.
The invention has the benefit that OLED display panel provided by the present invention and preparation method, by fixed in pixel
Absciss layer to be stripped is plated on adopted layer, and absciss layer to be stripped and the part cathode metal layer on its surface are removed, and remains remaining cathode
Metal layer avoids the camera under screen from the interference of the translucent film layer of cathode, further reduces the production of OLED device
Period.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Figure 1A is OLED display panel cross section structure schematic diagram of the present invention.
Figure 1B is the floor map of cathodic metal layer pattern of the present invention.
Fig. 2 is the preparation method flow chart of OLED display panel of the present invention.
Fig. 3 A-3F is the preparation method schematic diagram of OLED display panel described in Fig. 2.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
The present invention is directed to existing liquid crystal display panel, due to existing OLED display panel and preparation method, due to
When being applied to cathode to shield lower camera technology, needs to carry out cathode evaporation twice, increase the production cycle of OLED device
Technical problem, the present embodiment are able to solve the defect.
It as shown in Figure 1A, is OLED display panel cross section structure schematic diagram of the present invention.Wherein, the present invention provides a kind of OLED
Display panel, including underlay substrate 11, anode metal layer 12, pixel defining layer 13, OLED luminescent layer 15, cathode metal layer 16 with
And thin-film encapsulation layer 17, the pixel defining layer 13 are equipped with multiple first openings 14, multiple first openings 14 are described
Multiple pixel regions are limited on underlay substrate 11 and the anode metal layer 12 respectively, multiple OLED luminescent layers 15 are set to
In corresponding multiple pixel regions.
Specifically, the underlay substrate 11 is TFT substrate.
Specifically, the material of the anode metal layer 12 is transparent conductive metal oxide, it is preferred that the anode metal
The material of layer 12 is tin indium oxide (ITO).
Specifically, the thickness of the pixel defining layer 13 be greater than the OLED luminescent layer 15, the cathode metal layer 16 with
The sum of three's thickness of the thin-film encapsulation layer 17 can guarantee that the leakproofness in the pixel openings region 14 is good in this way.
Specifically, the material of the cathode metal layer 16 is one of indium-zinc oxide, indium tin oxide, zinc oxide
Or it is a variety of.
Specifically, the material of the pixel defining layer 13 is organic photoresist.
It as shown in Figure 1B, is the floor map of 16 pattern of cathode metal layer described in Figure 1A.Wherein, the OLED is shown
Panel further includes cathode connecting line 18, and the pattern that the cathode metal layer 16 is formed includes cathodic region 161 and without cathodic region
162, the cathode metal layer 16 in the cathodic region 161 is covered in the OLED luminescent layer 15 and the cathode connecting line 18
On, the no cathodic region 162 is multiple through-holes 19 in array distribution.
Specifically, the shape of the corresponding sub-pixel 151 of the OLED luminescent layer 15 is octagon, multiple through-holes 19
Corresponding multiple sub-pixels 151 are staggered, and the shape of the through-hole 19 is octagon.
OLED display panel provided by the present invention can be in cathode filming knot in the case where being applied to screen in camera technology
Shu Hou removes the cathode other than luminous zone (and connecting line between cathode), the final light penetration for improving camera area.
As shown in Fig. 2, being the preparation method flow chart of OLED display panel of the present invention.The described method includes:
S10 provides a underlay substrate 31, and spaced multiple anode metal layers are formed on the underlay substrate 31
32, an organic photoresist layer 33 is deposited on the underlay substrate 31 and multiple anode metal layers 32.
Specifically, the S10 further include:
The underlay substrate 31 is TFT substrate, and the material of the anode metal layer 32 is transparent conductive metal oxide, excellent
Choosing, the anode metal layer 32 is tin indium oxide (ITO), as shown in Figure 3A.
S20 carries out patterned process to organic photoresist layer using halftone mask, obtains pixel defining layer 34, institute
It states pixel defining layer 34 and is equipped with multiple first openings 35, multiple first openings 35 are in the underlay substrate 31 and the sun
Multiple pixel regions are limited on pole metal layer 32 respectively.
Specifically, the S20 further include:
Halftone mask is placed in the top of organic photoresist layer 33, then halftone mask is penetrated to described using yellow light
Organic photoresist layer 33 is exposed and development treatment, and organic photoresist layer 33 is carried out patterned process, obtains pixel definition
Layer 34, the pixel defining layer 34 define multiple first openings 35 wide at the top and narrow at the bottom in the top of the anode metal layer 32,
Multiple first openings 35 limit multiple pixel regions on the underlay substrate 31 and the anode metal layer 32 respectively,
As shown in Figure 3B.
S30 forms an absciss layer 36 to be stripped on the top surface of the pixel defining layer 34.
Specifically, the S30 further include:
Firstly, depositing an absciss layer 36 to be stripped on the surface of the pixel defining layer 34, the absciss layer 36 to be stripped includes covering
Cover several first openings 35 on the top surface portion and the cladding pixel defining layer 34 of the pixel defining layer 34
Part；Later, processing is patterned to the absciss layer 36 to be stripped, it is fixed to coat the pixel on the removal absciss layer 36 to be stripped
The part of several first openings 35 on adopted layer 34, retains and covers the pixel defining layer 34 on the absciss layer 36 to be stripped
The part of top surface.Make the pattern form of the absciss layer to be stripped 36 similar to the shape of the pixel defining layer 34 in this way；Institute
Stating absciss layer 36 to be stripped has the property that distillation, cracking, liquefaction, dissolution or other similar phenomenas occur under specific condition, such as schemes
Shown in 3C.
S40, makes OLED luminescent layer 37 in the pixel region, and the OLED luminescent layer 37 is located at the anode metal
On layer 32.
Specifically, the S40 further include:
OLED luminescent layer 37 is made in the pixel region, the OLED luminescent layer 37 is located at the anode metal layer 32
On, the OLED luminescent layer 37 includes hole injection layer (HIL), hole transmission layer (HTL), organic luminous layer (EML), electronics biography
Defeated layer (ETL) and electron injecting layer (EIL), as shown in Figure 3D.
S50 successively makes cathode metal layer 38 and thin-film encapsulation layer by vapor deposition mode on the underlay substrate 31
39。
Specifically, the S50 further include:
The material of the cathode metal layer 38 be one of indium-zinc oxide, indium tin oxide, zinc oxide or a variety of,
The thin-film encapsulation layer 39 includes the mutually alternate inoranic membrane of multilayer and organic film；The inorganic membrane material include SiN, SiO2,
One of a-Si, Al2O3 or a variety of, organic membrane material include acrylate, polystyrene, one in polyene phenyl amine
Kind is a variety of；The thickness of the pixel defining layer 34 be greater than the OLED luminescent layer 37, the cathode metal layer 38 with it is described thin
The sum of three's thickness of film encapsulated layer 39 can guarantee that the leakproofness in the pixel openings region 14 is good in this way；It is described to glass
Glass layer 36 keeps stablizing the physically or chemically variation for not occurring to have an impact vapor deposition in cleaning and vapor deposition, as shown in FIGURE 3 E.
S60, by the absciss layer 36 to be stripped and the part cathode metal layer 38 being covered on the absciss layer to be stripped 36
And the part thin-film encapsulation layer 39 is removed by removing mode, retains the remaining cathode metal layer 38 and described thin
Film encapsulated layer 39 finally obtains the OLED display panel.
Specifically, the S60 further include:
The absciss layer 36 to be stripped is removed by removing mode, is covered on described in the part on the absciss layer to be stripped 36
Cathode metal layer 38 and the part thin-film encapsulation layer 39 remove together therewith, to retain remaining 38 He of the cathode metal layer
The thin-film encapsulation layer 39, finally obtains the OLED display panel；The pattern packet that the remaining cathode metal layer 38 is formed
It includes cathodic region and without cathodic region, the cathode metal layer in the cathodic region is covered in the OLED luminescent layer 37 and cathode
On connecting line, the no cathodic region is multiple through-holes in array distribution；The shape of 37 corresponding sub-pixel of OLED luminescent layer
For octagon, the corresponding multiple sub-pixels of multiple through-holes are staggered, and the shape of the through-hole is positive eight
Side shape.Preferably, the removing mode include laser irradiation, etching solution dissolution and heating one of or various ways, such as
Shown in Fig. 3 F.
The preparation method of OLED display panel in above-described embodiment is carried out later by plating absciss layer to be stripped on carrier
Absciss layer to be stripped is peeled off together together with the cathode metal layer on being covered in, is remained positioned at pixel openings area by cathode evaporation
The part in domain absciss layer to be stripped avoids camera doing from the translucent film layer of cathode under the screen except pixel openings region
It disturbs.
The invention has the benefit that OLED display panel provided by the present invention and preparation method, by fixed in pixel
Absciss layer to be stripped is plated on adopted layer, and absciss layer to be stripped and the part cathode metal layer on its surface are removed, and remains remaining cathode
Metal layer avoids the camera under screen from the interference of the translucent film layer of cathode, further reduces the production of OLED device
Period.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of OLED display panel, which is characterized in that shine including underlay substrate, anode metal layer, pixel defining layer, OLED
Layer, cathode metal layer and thin-film encapsulation layer, the pixel defining layer are equipped with multiple first openings, multiple first openings
Limit multiple pixel regions respectively on the underlay substrate and the anode metal layer, multiple OLED luminescent layers are set to
In corresponding multiple pixel regions；
Wherein, the OLED display panel further includes cathode connecting line, and the pattern that the cathode metal layer is formed includes cathodic region
And without cathodic region, the cathode metal layer in the cathodic region is covered in the OLED luminescent layer and the cathode connecting line
On, the no cathodic region is multiple through-holes in array distribution.
2. OLED display panel according to claim 1, which is characterized in that the shape of the OLED luminescent layer corresponding sub-pixel
Shape is octagon, and the corresponding multiple sub-pixels of multiple through-holes are staggered, and the shape of the through-hole is positive
Octagon.
3. OLED display panel according to claim 1, which is characterized in that the thickness of the pixel defining layer is greater than described
The sum of OLED luminescent layer, the cathode metal layer and three's thickness of the thin-film encapsulation layer.
4. OLED display panel according to claim 1, which is characterized in that the material of the cathode metal layer is indium zinc oxygen
One of compound, indium tin oxide, zinc oxide are a variety of, and the material of the pixel defining layer is organic photoresist.
5. a kind of preparation method of OLED display panel, which is characterized in that the described method includes:
S10 provides a underlay substrate, spaced multiple anode metal layers is formed on the underlay substrate, in the lining
An organic photoresist layer is deposited on substrate and multiple anode metal layers；
S20 carries out patterned process to organic photoresist layer using halftone mask, obtains pixel defining layer, the pixel
Definition layer is equipped with multiple first openings, and multiple first openings are distinguished on the underlay substrate and the anode metal layer
Limit multiple pixel regions；
S30 forms an absciss layer to be stripped on the top surface of the pixel defining layer；
S40, makes OLED luminescent layer in the pixel region, and the OLED luminescent layer is located in the anode metal layer；
S50 successively makes cathode metal layer and thin-film encapsulation layer by vapor deposition mode on the underlay substrate；
S60, will be described in the absciss layer to be stripped and the part cathode metal layer being covered on the absciss layer to be stripped and part
Thin-film encapsulation layer is removed by removing mode, retains the remaining cathode metal layer and the thin-film encapsulation layer, finally
Obtain the OLED display panel.
6. the preparation method of OLED display panel according to claim 5, which is characterized in that the step S30 further include:
S301, deposits an absciss layer to be stripped on the surface of the pixel defining layer, and the absciss layer to be stripped includes covering the pixel
The part of the top surface portion of definition layer and several first openings in the cladding pixel defining layer；
S302 is patterned processing to the absciss layer to be stripped, removes and coat in the pixel defining layer on the absciss layer to be stripped
Several first openings parts, retain the part that the top surface of the pixel defining layer is covered on the absciss layer to be stripped.
7. the preparation method of OLED display panel according to claim 6, which is characterized in that the material of the absciss layer to be stripped
With the property that distillation, cracking, liquefaction, dissolution or other similar phenomenas occur under specific condition.
8. the preparation method of OLED display panel according to claim 5, which is characterized in that described in the step S50
The thickness of pixel defining layer be greater than the OLED luminescent layer, the cathode metal layer and the thin-film encapsulation layer three's thickness it
With.
9. the preparation method of OLED display panel according to claim 5, which is characterized in that described in the step S60
Removing mode includes one of laser irradiation, etching solution dissolution and heating or various ways.
10. the preparation method of OLED display panel according to claim 5, which is characterized in that in the step S60, remain
The pattern that the remaining cathode metal layer is formed includes cathodic region and the cathodic metal without cathodic region, in the cathodic region
Layer is covered on the OLED luminescent layer and cathode connecting line, and the no cathodic region is multiple through-holes in array distribution；It is described
The shape of OLED luminescent layer corresponding sub-pixel is octagon, and the corresponding multiple sub-pixels of multiple through-holes interlock
Arrangement, the shape of the through-hole are octagon.
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Application publication date: 20190809 |