CN105206650A - Transparent display panel and manufacturing method thereof - Google Patents
Transparent display panel and manufacturing method thereof Download PDFInfo
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- CN105206650A CN105206650A CN201510650959.4A CN201510650959A CN105206650A CN 105206650 A CN105206650 A CN 105206650A CN 201510650959 A CN201510650959 A CN 201510650959A CN 105206650 A CN105206650 A CN 105206650A
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Abstract
The invention discloses a transparent display panel and a manufacturing method thereof. The transparent display panel comprises a substrate, organic electroluminescent devices, pixel electrodes, light-emitting layers, opposite-direction electrodes and a conductive layer, wherein the substrate comprises a plurality of pixel areas and a light transmitting area surrounding the pixel area; the organic electroluminescent devices are arranged on the substrate, correspond to the pixel areas of the substrate and comprise thin film transistors which are arranged on the pixel areas of the substrate; the pixel electrodes are arranged on the thin film transistors and electrically connected with the thin film transistors; the light-emitting layers are arranged on the pixel electrodes; the opposite-direction electrodes are arranged in the pixel areas of the substrate and located above the light-emitting layers; the conductive layer is arranged above the light transmitting area, located between the two opposite-direction electrodes and used for connecting the two adjacent opposite-direction electrodes; the conductive layer is made from conductive materials with the evaporation temperature lower than 600 DEG C.
Description
Technical field
Designing semiconductor device field of the present invention, particularly a kind of transparent display panel and manufacture method thereof.
Background technology
Estimate according to market research agency IHS, within 2015, transparent display market value can reach 100,000,000 dollars, after 10 years, jumping is increased to 87,000,000,000 dollars, every year by with the speed increment of nearly twice.Its application comprises many aspects, such as: individual application (wrist-watch, mobile phone, panel computer, notebook computer etc.); Household electrical appliance display (refrigerator, microwave oven etc.), TV/large-screen display; Ad display screen, office display, education, building (window); Military use; Look squarely display (automobile, aircraft) etc.
A leading indicator of Transparence Display is exactly its transparency (i.e. light transmission), compared with many display floaters, oled panel because of its active illuminating, high-contrast, become the only carrier of development Transparence Display technology without the device architecture of its plurality of advantages such as angle limitations and uniqueness.In transparent OLED display panel, because negative electrode needs the problem considering matching, what adopt mostly is the low-work-function material such as Mg/Ag (alloy), Yb, Ga, Ba, Mg/A1 (alloy), the light transmission of these low-work-function materials is non-constants, and the light transmittance of usual negative electrode is only about 50%.
The processing procedure of negative electrode generally can adopt common mask plate (non-high accuracy mask plate) to carry out full frame negative electrode evaporation, because the penetrance of negative electrode is lower, therefore greatly limits the transparency (i.e. light transmission) of transparent OLED display panel.For this problem, also there is the negative electrode of some transparent OLED display panel to overlap metal mask plate by use two at present and respectively evaporation is carried out to the pixel region of transparent OLED display panel and transparent area.Wherein, the negative electrode of evaporation in transparent area mainly plays conducting evaporation in the effect of the negative electrode of pixel region.Therefore, evaporation is the smaller the better in the area of the negative electrode of transparent area, makes transparent area have preferably penetrance thus improves the light transmission of whole clearing OLED display panel.
In order to make evaporation little in the area of the negative electrode of transparent area, can in evaporate process, use high-precision metal mask plate to carry out evaporation, the opening size of high-precision metal mask plate be the smaller the better.But in this evaporate process, the deposition material used due to the negative electrode of evaporation in transparent area is generally conducting metal, as Ag, AL etc., the evaporation temperature of these materials is higher, its temperature produced when evaporation can cause metal mask plate to be out of shape, and surface tension between deposition material and metal mask plate is close, easily cause metal mask plate to produce adsorption effect, the high-precision metal mask plate causing opening less produces the phenomenon of opening blocking, and the probability of opening less opening blocking is larger.The distortion of metal mask plate and opening blocking can have a strong impact on the aligning accuracy of metal mask plate and the making of transparent OLED display panel.
Summary of the invention
For defect of the prior art, the object of this invention is to provide a kind of transparent display panel and manufacture method thereof, this transparent display panel and manufacture method thereof can solve in the negative electrode processing procedure process of existing transparent display panel effectively affects the problem such as the aligning accuracy of metal mask plate and the making of transparent display panel because of the distortion of metal mask plate and opening blocking.
There is provided a kind of transparent display panel according to an aspect of the present invention, it is characterized in that, described transparent display panel comprises: substrate, and described substrate comprises multiple pixel region and the transparent area around described pixel region; Organic electroluminescence device, is arranged on described substrate, and corresponds to the pixel region of described substrate, and described organic electroluminescence device comprises: thin-film transistor, is arranged on the pixel region of described substrate; Pixel electrode, is arranged on described thin-film transistor, is electrically connected with described thin-film transistor; Luminescent layer, is arranged on described pixel electrode; Counter electrode, is arranged at the pixel region of described substrate, and is positioned at the top of described luminescent layer; Conductive layer, is arranged at the top of described transparent area, and between adjacent two described counter electrodes, connect two adjacent described counter electrodes, wherein, described conductive layer is made up of the electric conducting material of evaporation temperature lower than 600 DEG C.
Preferably, the material that described conductive layer is greater than 80% by visible light transmissivity is made.
Preferably, described conductive layer is by C60, C70 material; C60, C70 material of the dopant material of doped p-type or N-type; MoO3; Perylene diimide, IZO or ITO material are made.
Preferably, described dopant material is F4-TCNQ material.
Preferably, described counter electrode is made up of Mg/Ag, Yb, Ga, Ba, Mg/A1 or Yb/Ag material.
Preferably, the thickness of described counter electrode is
Preferably, the thickness of described conductive layer is
Preferably, described conductive layer is positioned at the top of described counter electrode, and its both sides overlap the top in adjacent two described counter electrodes.
Preferably, the width of the lap of described conductive layer and each described counter electrode is less than or equal to 10 μm.
According to another aspect of the present invention, also provide a kind of manufacture method of above-mentioned transparent display panel, it is characterized in that, described manufacture method comprises the steps: to provide a substrate, and described substrate comprises pixel region and the transparent area around described pixel region; Pixel region on substrate makes thin-film transistor; On the substrate pixel region sputtering pixel electrode, and on described pixel electrode evaporation luminescent layer; At the pixel region evaporation counter electrode of described substrate; And under the environment of evaporation temperature 600 DEG C, at the transparent area evaporation conductive layer of described substrate, described conductive layer, between adjacent two described counter electrodes, connects two adjacent described counter electrodes.
Preferably, described counter electrode uses the first metal mask plate to carry out evaporation, and described conductive layer uses the second metal mask plate to carry out evaporation.
Preferably, the material that described conductive layer is greater than 80% by visible light transmissivity is made.
Preferably, described counter electrode and described conductive layer all use the first metal mask plate to carry out evaporation.
Preferably, described first metal mask plate is common metal mask plate, and the opening size of described first metal mask plate is 60 μm × 70 μm.
Preferably, described second metal mask plate is high-precision metal mask plate, and the opening size of described second metal mask plate is 30 μm × 60 μm.
Compared to prior art, transparent display panel of the present invention is only at the counter electrode that pixel region evaporation light transmission is lower, by making counter electrode realize conducting at transparent area evaporation conductive layer bridge joint counter electrode, and conductive layer use evaporation temperature is lower than the electric conducting material of 600 DEG C, thus at least has following beneficial effect:
1) the evaporation temperature of conductive layer is low, avoids the high-precision metal mask plate used in conductive layer processing procedure process to occur the problems such as distortion, opening obstruction, improves the production yield of transparent display panel, add the useful life of high-precision metal mask plate;
2) in conductive layer evaporation temperature lower than the material that the basis of 600 DEG C uses light transmission higher, even if make the evaporation of conductive layer use the common metal mask plate identical with evaporation counter electrode, also too large impact can not be caused on the transparency of transparent display panel, decrease the use of a set of metal mask plate, save the production cost of transparent display panel.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Fig. 1 is the vertical section structure schematic diagram of transparent display of the present invention;
Fig. 2 is the front view of transparent display of the present invention;
Fig. 3 is the flow chart of the manufacture method of transparent display of the present invention;
Fig. 4 is the vertical section structure schematic diagram of the transparent display arrange thin-film transistor on substrate after;
Fig. 5 is the vertical section structure schematic diagram of the transparent display after forming pixel electrode and luminescent layer; And
Fig. 6 is the vertical section structure schematic diagram of the transparent display after forming counter electrode.
Embodiment
According to purport design of the present invention, described transparent display panel comprises: substrate, and described substrate comprises multiple pixel region and the transparent area around described pixel region; Organic electroluminescence device, is arranged on described substrate, and corresponds to the pixel region of described substrate, and described organic electroluminescence device comprises: thin-film transistor, is arranged on the pixel region of described substrate; Pixel electrode, is arranged on described thin-film transistor, is electrically connected with described thin-film transistor; Luminescent layer, is arranged on described pixel electrode; Counter electrode, is arranged at the pixel region of described substrate, and is positioned at the top of described luminescent layer; Conductive layer, is arranged at the top of described transparent area, and between adjacent two described counter electrodes, connect two adjacent described counter electrodes, wherein, described conductive layer is made up of the electric conducting material of evaporation temperature lower than 600 DEG C.
Below in conjunction with drawings and Examples, technology contents of the present invention is described further.
Described transparent display panel comprises pixel region and transparent area.Wherein, multiple described pixel region is arranged in described transparent display panel, and described pixel region is for sending the light of RGB tri-kinds of colors.Described transparent area around described pixel region, the region namely in transparent display panel beyond pixel region.Described transparent area can be able to penetrate for light, and it directly has influence on light transmission and the display effect of described transparent display panel.
Please also refer to Fig. 1 and Fig. 2, which respectively show vertical section structure schematic diagram and the front view of transparent display panel of the present invention.As depicted in figs. 1 and 2, in a preferred embodiment of the invention, described transparent display panel comprises substrate 1, multiple organic electroluminescence device and conductive layer 2.Substrate 1 comprises multiple pixel region A and the transparent area B around described pixel region A, and wherein, the pixel region A of substrate 1 is the pixel region of described transparent display panel, and the transparent area B of substrate 1 is the transparent area of described transparent display panel.Described organic electroluminescence device is arranged on substrate 1, and corresponds to the pixel region of substrate 1.
Be described for the structure of four continuous print organic electroluminescence device regions any in transparent display panel in Fig. 1.As shown in Figure 1, described organic electroluminescence device comprises: thin-film transistor 31, pixel electrode 32, luminescent layer 33 and counter electrode 34.
Thin-film transistor 31 is arranged on the pixel region of substrate 1.Thin-film transistor 31 is preferably low-temperature polysilicon film transistor.Pixel electrode 32 is arranged on thin-film transistor 31.Luminescent layer 33 is arranged on pixel electrode 32.Wherein, luminescent layer 33 comprises organic light emitting material, electron injecting layer, hole injection layer, electron transfer layer, hole transmission layer, electronic barrier layer, hole blocking layer (not shown).
Counter electrode 34 is arranged on luminescent layer 33, and covers luminescent layer 33.As shown in Figure 2, the region that counter electrode 34 shows is the pixel region of substrate 1.Counter electrode 34 is preferably made up of materials such as Mg/Ag (alloy), Yb, Ga, Ba, Mg/Al (alloy) or Yb/Ag (alloy).The thickness of counter electrode 34 is preferably
The light transmission of the material adopted due to counter electrode 34 is low, and mainly the luminescence of pixel region is worked, therefore, the counter electrode 34 of transparent display panel of the present invention is only arranged at pixel region, and described transparent area is not provided with counter electrode 34, therefore, counter electrode 34 can't affect the light transmission of described transparent area.But, do not connect between multiple counter electrode 34, there is electrical connection problem.In order to solve the electrical connection problem between multiple counter electrode 34, therefore, transparent display panel of the present invention also comprises conductive layer 2.
Conductive layer 2 is arranged at the top of described transparent area, between adjacent two counter electrodes 34, connect two adjacent counter electrodes 34, conductive layer 2 for solve counter electrode 34 electrical connection problem, by counter electrode 34 bridge joint, meanwhile, the impact of the light transmission for described transparent area is reduced.Particularly, in preferred embodiment shown in Fig. 1, conductive layer 2 is positioned at the top of counter electrode 34, conductive layer 2 and adjacent two both sides that counter electrode 34 is connected overlap on adjacent two counter electrodes 34, this set-up mode can make to have good contact between conductive layer 2 and counter electrode 34, ensures the conduction property between counter electrode 34.Preferably, conductive layer 2 is less than or equal to 10 μm with the width of the lap of each counter electrode 34.Conductive layer 2 thickness is preferably
In order to avoid the light transmission of conductive layer 2 pairs of transparent areas produces considerable influence, conductive layer 2 is while meeting electric conductivity, it is the smaller the better at the area of transparent area, therefore, conductive layer 2 needs to use high-precision metal mask plate (high-precision metal mask plate refers to that opening size is preferably the metal mask plate of 30 μm × 60 μm) to be formed by the mode of evaporation in actual processing procedure process.And in existing processing procedure process, the evaporation temperature of the material used due to conductive layer 2 is higher, evaporation temperature can make high-precision metal mask plate produce distortion, and the opening size of high-precision metal mask plate is little, therefore, high-precision metal mask plate can be made to produce the phenomenon of opening blocking, and the distortion of high-precision metal mask plate and opening blocking can affect the aligning accuracy of precision metal mask plate and the making of transparent display panel.
Find after inventor's research, the temperature of usual high-precision metal mask plate can start the phenomenon occurring distortion and opening blocking when reaching 80-100 DEG C, but because high-precision metal mask plate has certain distance in the position of processing procedure process middle distance vapor deposition source (i.e. deposition material), if when the temperature of vapor deposition source (i.e. deposition material) is lower than 600 DEG C, the temperature of high-precision metal mask plate can not reach 80-100 DEG C usually.Therefore, in order to the phenomenon preventing high-precision metal mask plate from producing distortion and opening blocking, conductive layer 2 of the present invention is made up of the electric conducting material of evaporation temperature lower than 600 DEG C.
In order to reduce the impact that conductive layer produces the light transmission of described transparent area further, the material of conductive layer 2 is meeting evaporation temperature lower than under the prerequisite of 600 DEG C, and the electric conducting material being preferably greater than 80% by visible light transmissivity is made.
Under the prerequisite meeting above-mentioned condition, in a preferred embodiment of the invention, conductive layer 2 is by C60, the Graphene class materials such as C70 or in above-mentioned material the material such as dopant material of doped N-type or P type make, above-mentioned dopant material can promote C60 further, the conductivity of the Graphene class materials such as C70, described dopant material can be F4-TCNQ material, wherein, C60, the evaporation temperature of the Graphene class materials such as C70 is roughly 400 DEG C, the evaporation temperature of F4-TCNQ material is roughly 200 DEG C, the evaporation temperature of these materials is all lower than 600 DEG C, and there is good conductivity and light transmission.Or the conductive layer 2 also good inorganic material of conductivity such as the good organic material of conductivity or MoO3 such as Ke Yi You perylene diimide is made, and wherein the evaporation temperature of ， perylene diimide material is roughly 200 DEG C, and the evaporation temperature of MoO3 material is roughly 400 DEG C.In addition, in some embodiments of the invention, conductive layer 2 also can be made up of IZO or ITO material, it should be noted that, IZO or ITO material not only can use the mode of evaporation to be formed, and the mode of high temperature sputter also can be used to be formed, do not repeat them here.
Further, in some embodiments of the invention, described transparent display panel can also comprise resilient coating (not shown).Resilient coating is arranged on substrate 1, and wherein, the resilient coating in the pixel region of described transparent display panel is between substrate 1 and described organic electroluminescence device.Specifically, the top of resilient coating covered substrate 1, wherein, in described pixel region part, resilient coating is arranged between substrate 1 and thin-film transistor 31; In the part of described transparent area, resilient coating is arranged between substrate 1 and conductive layer 2.Preferably, resilient coating is made up of silica or silicon nitride material.The thickness of resilient coating is
Please also refer to Fig. 3 to Fig. 6, which respectively show the vertical section structure schematic diagram of the transparent display panel that each step is corresponding in the flow chart of the manufacture method of transparent display panel of the present invention and manufacture process.Specifically, the present invention also provides the manufacture method of the transparent display panel described in a kind of Fig. 1 and Fig. 2.As shown in Figure 3, described manufacture method comprises the steps:
Step S100: pixel region predetermined on substrate 1 makes thin-film transistor 31, as shown in Figure 4.In some change case, can prior to substrate 1 make resilient coating before making thin-film transistor 31, thin-film transistor 31 is made on resilient coating.
Step S200: on substrate 1 pixel region sputtering pixel electrode 32, and on pixel electrode 32 evaporation luminescent layer 33.Pixel electrode 32 is sputtered in the top of thin-film transistor 31, as shown in Figure 5.Wherein, the order of luminescent layer 33 evaporation is followed successively by evaporation hole injection layer, hole transmission layer, electronic barrier layer, organic light emitting material, hole blocking layer, electron transfer layer and electron injecting layer.
Step S300: at the pixel region evaporation counter electrode 34 of substrate 1.Wherein, the evaporate process of counter electrode 34 is undertaken by using the first metal mask plate, described first metal mask plate is common metal mask plate (i.e. non-high accuracy metal mask plate), and the opening size of described first metal mask plate is preferably 60 μm × 70 μm.Particularly, by the transparent area of described first metal mask plate covered substrate 1, its opening is positioned at the pixel region of substrate 1, and therefore, the counter electrode 34 after evaporation only covers described pixel region, evaporation on luminescent layer 33, as shown in Figure 6.
Step S400: at the transparent area evaporation conductive layer 2 of substrate 1.Conductive layer 2, between adjacent two counter electrodes 34, connects two adjacent counter electrodes 34.Conductive layer 2 is made up of the electric conducting material of evaporation temperature lower than 600 DEG C.The evaporate process of conductive layer 2 is undertaken by using the second metal mask plate, and described second metal mask plate is high-precision metal mask plate, and the opening size of described second metal mask plate is preferably 30 μm × 60 μm.Transparent display panel is as shown in Figure 1 formed after evaporation conductive layer 2.
It should be noted that, in of the present invention other are implemented, conductive layer 2 preferably by evaporation temperature lower than 600 DEG C and the electric conducting material that visible light transmissivity is greater than 80% make.In these embodiments, because the light absorption of this kind of material is smaller, visible light transmissivity is comparatively large, larger impact can not be produced on the light transmission of transparent display panel.Therefore, use the conductive layer 2 of this kind of material can arrange larger at the conductive layer 2 of the lower material of the area relative usage light transmission of transparent area, and then, also the first metal mask plate (i.e. non-high accuracy metal mask plate) can be used to carry out evaporation, namely in the processing procedure process of transparent display panel, counter electrode 34 and conductive layer 2 can all use described first metal mask plate to carry out evaporation, reduce the use of a set of high accuracy mask plate, reduce production cost.
In sum, in conjunction with the embodiment shown in above-mentioned Fig. 1 to Fig. 6, transparent display panel of the present invention is only at the counter electrode that pixel region evaporation light transmission is lower, by making counter electrode realize conducting at transparent area evaporation conductive layer bridge joint counter electrode, and conductive layer use evaporation temperature is lower than the electric conducting material of 600 DEG C, thus at least have: the evaporation temperature of conductive layer is low, the high-precision metal mask plate used in conductive layer processing procedure process is avoided to occur distortion, the problems such as opening obstruction, improve the production yield of transparent display panel, add the useful life of high-precision metal mask plate, in conductive layer evaporation temperature lower than the material that the basis of 600 DEG C uses light transmission higher, even if make the evaporation of conductive layer use the common metal mask plate identical with evaporation counter electrode, also too large impact can not be caused on the transparency of transparent display panel, decrease the use of a set of metal mask plate, save the beneficial effects such as the production cost of transparent display panel.
Although the present invention with preferred embodiment disclose as above, but itself and be not used to limit the present invention.Those skilled in the art, without departing from the spirit and scope of the present invention, when doing various changes and amendment.Therefore, the scope that protection scope of the present invention ought define depending on claims is as the criterion.
Claims (15)
1. a transparent display panel, is characterized in that, described transparent display panel comprises:
Substrate, described substrate comprises multiple pixel region and the transparent area around described pixel region;
Organic electroluminescence device, is arranged on described substrate, and corresponds to the pixel region of described substrate, and described organic electroluminescence device comprises:
Thin-film transistor, is arranged on the pixel region of described substrate;
Pixel electrode, is arranged on described thin-film transistor, is electrically connected with described thin-film transistor;
Luminescent layer, is arranged on described pixel electrode; And
Counter electrode, is arranged at the pixel region of described substrate, and is positioned at the top of described luminescent layer; And
Conductive layer, is arranged at the top of described transparent area, and between adjacent two described counter electrodes, connect two adjacent described counter electrodes, wherein, described conductive layer is made up of the electric conducting material of evaporation temperature lower than 600 DEG C.
2. transparent display panel according to claim 1, is characterized in that, the material that described conductive layer is greater than 80% by visible light transmissivity is made.
3. transparent display panel according to claim 1 and 2, is characterized in that, described conductive layer is by C60, C70 material; C60, C70 material of the dopant material of doped p-type or N-type; MoO3; Perylene diimide, IZO or ITO material are made.
4. transparent display panel according to claim 3, is characterized in that, described dopant material is F4-TCNQ material.
5. transparent display panel according to claim 1, is characterized in that, described counter electrode is made up of Mg/Ag, Yb, Ga, Ba, Mg/A1 or Yb/Ag material.
6. transparent display panel according to claim 1, is characterized in that, the thickness of described counter electrode is
7. transparent display panel according to claim 1, is characterized in that, the thickness of described conductive layer is
8. transparent display panel according to claim 1, is characterized in that, described conductive layer is positioned at the top of described counter electrode, and its both sides overlap the top in adjacent two described counter electrodes.
9. transparent display panel according to claim 1, is characterized in that, the width of the lap of described conductive layer and each described counter electrode is less than or equal to 10 μm.
10. a manufacture method for transparent display panel, is characterized in that, described manufacture method comprises the steps:
There is provided a substrate, described substrate comprises pixel region and the transparent area around described pixel region;
Pixel region on substrate makes thin-film transistor;
On the substrate pixel region sputtering pixel electrode, and on described pixel electrode evaporation luminescent layer;
At the pixel region evaporation counter electrode of described substrate; And
Under the environment of evaporation temperature 600 DEG C, at the transparent area evaporation conductive layer of described substrate, described conductive layer, between adjacent two described counter electrodes, connects two adjacent described counter electrodes.
The manufacture method of 11. transparent display panel as claimed in claim 10, it is characterized in that, described counter electrode uses the first metal mask plate to carry out evaporation, and described conductive layer uses the second metal mask plate to carry out evaporation.
The manufacture method of 12. transparent display panel as claimed in claim 10, it is characterized in that, the material that described conductive layer is greater than 80% by visible light transmissivity is made.
The manufacture method of 13. transparent display panel as claimed in claim 12, it is characterized in that, described counter electrode and described conductive layer all use the first metal mask plate to carry out evaporation.
The manufacture method of 14. transparent display panel as described in claim 11 or 13, it is characterized in that, described first metal mask plate is common metal mask plate, and the opening size of described first metal mask plate is 60 μm × 70 μm.
The manufacture method of 15. transparent display panel as claimed in claim 11, it is characterized in that, described second metal mask plate is high-precision metal mask plate, and the opening size of described second metal mask plate is 30 μm × 60 μm.
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