CN110112159A - Imaging sensor and forming method thereof - Google Patents
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- CN110112159A CN110112159A CN201910392471.4A CN201910392471A CN110112159A CN 110112159 A CN110112159 A CN 110112159A CN 201910392471 A CN201910392471 A CN 201910392471A CN 110112159 A CN110112159 A CN 110112159A
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- 238000000034 method Methods 0.000 title claims abstract description 83
- 238000003384 imaging method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 238000009826 distribution Methods 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 238000002164 ion-beam lithography Methods 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 106
- 229910052751 metal Inorganic materials 0.000 description 28
- 239000002184 metal Substances 0.000 description 28
- 230000003287 optical effect Effects 0.000 description 19
- 238000002955 isolation Methods 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012774 insulation material Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 230000009514 concussion Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002082 metal nanoparticle Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
Technical solution of the present invention discloses a kind of imaging sensor and forming method thereof, and method includes: offer semiconductor substrate, and the semiconductor substrate includes several pixel regions；Dielectric layer is formed on the semiconductor substrate；The dielectric layer is etched, forms several ring-shaped grooves in each pixel region, the ring-shaped groove size in different pixels area is different；Metallic diaphragm is formed on the dielectric layer, and the metallic diaphragm covers the ring-shaped groove, the metallic diaphragm of each pixel region is distributed in concave-convex annular；Metallic diaphragm annular distribution central area is etched to the dielectric layer surface is exposed, forms light hole in the metallic diaphragm center position of concave-convex annular distribution.Present invention saves production process.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of imaging sensor and forming method thereof.
Background technique
Imaging sensor is a kind of device that optical imagery is converted into electric signal.With the hair of computer and communications industry
Exhibition, the demand to high-performance image sensors constantly increase, these high-performance image sensors are widely used in such as Digital photographic
The various necks of machine, camcorders, PCS Personal Communications System (PCS), game machine, security monitoring video camera, medical miniature camera etc
Domain.
Imaging sensor is usually two types, charge coupling device (CCD) sensor and cmos image sensor (CMOS
Image Sensors, CIS).Compared to ccd image sensor, cmos image sensor has integrated level height, small power consumption, generation
The advantages that at low cost.In traditional cmos photosensitive element, light sensitive diode is located at circuit transistor rear, and light-inletting quantity can be because blocking
It is affected.Back-illuminated type CMOS is exactly clubhauled, and light is allowed to initially enter light sensitive diode, thus increase sensitive volume,
Significantly improve the shooting effect under low-light conditions.
Currently, cmos image sensor is during the work time, optical filter can be first passed through by incident light and be filtered into red blue green three
Kind monochromatic light, then photodiode collects corresponding optical signal respectively, exports electric signal, and restore figure by difference calculating
Picture.
But since the material of different colours optical filter is different, thus cannot be formed simultaneously, and adjacent optical filter
Between need to do isolation structure also to prevent the light cross-interference issue between different units, therefore complex procedures.
Summary of the invention
Technical solution of the present invention technical problems to be solved are: the optical filter of existing cmos image sensor due to color not
Together, material is also inevitable different, thus cannot be formed simultaneously, and it also requires doing isolation structure between adjacent optical filter, cause
Complex procedures.
In order to solve the above technical problems, technical solution of the present invention provides a kind of forming method of imaging sensor, comprising: mention
For semiconductor substrate, the semiconductor substrate includes several pixel regions；Dielectric layer is formed on the semiconductor substrate；Etching institute
Dielectric layer is stated, forms several ring-shaped grooves in each pixel region, the ring-shaped groove size in different pixels area is different；In the dielectric layer
Upper formation metallic diaphragm, and the metallic diaphragm covers the ring-shaped groove, the metallic diaphragm of each pixel region is in recessed
Convex annular spread；Metallic diaphragm annular distribution central area is etched to the dielectric layer surface is exposed, in concave-convex annular point
The center position of the metallic diaphragm of cloth forms light hole.
Optionally, the pixel region includes: red pixel area, green pixel area and blue pixel area.
Optionally, the ring-shaped groove ring width in the red pixel area is 580nm~620nm, the green pixel area
The ring-shaped groove ring width be 380nm~420nm, the ring-shaped groove ring width in the blue pixel area be 280nm~
320nm。
Optionally, the technique for forming ring-shaped groove includes: to form photoresist layer on the dielectric layer；To the light
Photoresist layer is exposed development, forms the different ring-shaped groove figure of corresponding different pixels area size；It is with the photoresist layer
Exposure mask forms ring-shaped groove along dielectric layer described in the ring-shaped groove pattern etching；Remove the photoresist layer.
Optionally, the material of the metallic diaphragm is gold, silver or copper.
Optionally, the technique for forming the metallic diaphragm is sputter coating process, vacuum evaporation process, ion film plating work
Skill, arc-plasma depositing process or electroplating technology.
Optionally, the critical size of the light hole is less than 100nm.
Optionally, the technique for etching the metallic diaphragm is dry etch process or focused-ion-beam lithography technique.
Optionally, the material of the dielectric layer is the high light transmittance insulation material of silicon oxide or silicon nitride or polyimide
Material.
Optionally, the technique for forming the dielectric layer is aumospheric pressure cvd technique, low-pressure chemical vapor deposition work
Skill, secondary pressure chemical vapor deposition technique, plasma enhanced chemical vapor deposition technique or atomic vapor deposition technique.
The imaging sensor obtained by above-mentioned forming method, comprising: semiconductor substrate, the semiconductor substrate include
Several pixel regions；Dielectric layer is located in the semiconductor substrate；Several ring-shaped grooves, positioned at the dielectric layer of each pixel region
It is interior, and the ring-shaped groove size in different pixels area is different；Metallic diaphragm is located on the dielectric layer and covers the annular ditch
The metallic diaphragm of slot, each pixel region is distributed in concave-convex annular；Light hole, positioned at the concave-convex metal of annular spread
The center of film layer, and expose the dielectric layer.
Compared with prior art, technical solution of the present invention has the advantages that form metallic diaphragm, in different pixels
The ring size of metallic diaphragm described in area is different, i.e., the metal film layer surface in different pixels area forms respectively specific periodical line
Road.According to surface plasma body resonant vibration theory, incident light can generate plasma in the metal film layer surface with specific period
Resonance, makes metal film layer surface electromagnetic wave energy be doubled and redoubled, and the electromagnetic wave through resonant check can be horizontal along metal film layer surface
To propagation；Incident light is propagated to period center through metal film layer surface after metal film layer surface resonant check and is converged, and is passed through
The light hole of center is transmitted to the photodiode region in semiconductor substrate and realizes photoelectric conversion；Due to different pixels area
Metallic diaphragm has respective specific period lines, realizes the monochrome for being enhanced incident ray and being isolated different wave length
Light completes the production of imaging sensor optical filter.
Due to forming the optical filter in different pixels area using primary depositing metallic diaphragm, process, easy to operate is saved；And
And the isolation of light screening area is realized using the different cycles structure of metallic film, dielectric layer is between metallic film and substrate
Metal and substrate contact are avoided, the risk of metallic pollution is reduced, therefore does not need to be formed between the optical filter in adjacent pixel area
Isolation structure not only saves process, while also playing the light crosstalk reduced between adjacent pixel area.
Detailed description of the invention
Fig. 1 is the corresponding structural schematic diagram of imaging sensor formation process；
Fig. 2 to Fig. 6 is the corresponding structural schematic diagram of each step in the image sensor of that present invention forming process；
Fig. 7 is the top view of one of pixel region metallic diaphragm structure in the imaging sensor of the invention formed.
Specific embodiment
Currently, first passing through optical filter when imaging sensor works for incident light and being filtered into three kinds of monochromatic light of red blue green, then
Corresponding photodiode collects corresponding optical signal respectively, exports electric signal, and restore image by difference calculating.Due to
Optical filter needs for incident light to be filtered into the monochromatic light of different colours, therefore the material of optical filter can be different, can not simultaneously shape
At；And need to do metal grate structure between adjacent optical filter also to prevent the light cross-interference issue between different pixels area,
Production process is complicated.
Fig. 1 is the corresponding structural schematic diagram of imaging sensor formation process.Referring to Fig.1, semiconductor substrate 100, institute are provided
State and be formed with discrete photodiode 120 in semiconductor substrate, between the discrete photoelectric diode 120 by deep trench every
It is isolated from structure 140, the depth of the deep trench isolation structure 140 is deeper than the photodiode 120, to obtain more
Good isolation effect avoids the problem that photo-generated carrier diffusion occurs between different pixels region.
It then proceedes to be formed with reference to Fig. 1 on the surface of the semiconductor substrate 100 with silicon oxide or silicon nitride or both group
It is combined into the interlayer dielectric layer 160 of material；Metal layer and photoresist layer are sequentially formed on the interlayer dielectric layer 160；In pattern
After changing photoresist layer, using photoresist layer as exposure mask, metal layer is performed etching, forms metal grate 170；In the metal grate
Red lightscreening plate 180a, green color filter 180b, blue color filter 180c are respectively formed between 170.
Inventor has found that in the production process, needing first to etch to form discrete arrangement on interlayer dielectric layer
Metal grate, then form corresponding optical filter in different pixel regions in three times, such as formed in red pixel area red
Colo(u)r filter forms green color filter, in blue pixel area formation blue color filter, complex process in green pixel area.For
The above problem forms a kind of imaging sensor, comprising: provides semiconductor substrate, the semiconductor substrate includes several pixel regions；
Dielectric layer is formed on the semiconductor substrate；The dielectric layer is etched, forms several ring-shaped grooves, different pictures in each pixel region
The ring-shaped groove size in plain area is different；Metallic diaphragm is formed on the dielectric layer, and the metallic diaphragm covers the annular
The metallic diaphragm of groove, each pixel region is distributed in concave-convex annular；Etch metallic diaphragm annular distribution center
Domain forms light hole to the dielectric layer surface is exposed, in the center position of the metallic diaphragm of concave-convex annular distribution.?
The ring size of metallic diaphragm described in different pixels area is different, that is to say, that the metal film layer surface in different pixels area is formed respectively
Specific periodicity lines, realization may separate out different wave length after the metallic diaphragm of different cycles lines to incident ray
Monochromatic light with the corresponding pixel region of correspondence.By disposably forming metallic diaphragm, and the metallic diaphragm shape in different pixels area
At various sizes of annular spread structure, to reach the monochromatic purpose for isolating different colours, process, operation letter are saved
It is single；And the isolation of light screening area is realized using the different cycles structure of metallic film, dielectric layer is located at metallic film and lining
Metal and substrate contact are avoided between bottom, reduces the risk of metallic pollution, not only saves process, while it is adjacent to also play reduction
Light crosstalk between pixel region.
Technical solution of the present invention is described in detail below with reference to embodiment and attached drawing.
Fig. 2 to Fig. 6 is the corresponding structural schematic diagram of each step in semiconductor devices forming process of the present invention.
As shown in Fig. 2, providing semiconductor substrate 200, discrete photodiode is formed in the semiconductor substrate 200
220；Deep trench isolation structure 230 is formed in the semiconductor substrate 220, the deep trench isolation structure 230 is located at photoelectricity
Between diode 220, and the depth of the deep trench isolation structure 230 is deeper than the photodiode 220, to obtain more preferable
Isolation effect, avoid the problem that between different pixels area occur photo-generated carrier diffusion.
In the present embodiment, the semiconductor substrate 200 can be silicon substrate.In other embodiments, the semiconductor substrate
200 material can also be germanium, SiGe, silicon carbide, GaAs or gallium indium, and the semiconductor substrate 200 can also be exhausted
The germanium substrate on silicon substrate or insulator on edge body, or growth have the substrate of epitaxial layer.
In the present embodiment, the semiconductor substrate 200 includes several pixel regions, and the pixel region is red pixel area, green
Color pixel area and blue pixel area.
In the present embodiment, the photodiode 220 is sensor devices, and the optical signal received is converted to telecommunications
Number.In order to meet the semiconductor substrate 200 overall thickness thinning requirement, usual each photodiode 220 is in institute
It states the position in semiconductor substrate 200 and lies substantially in same depth.
In the present embodiment, the technique for forming the deep trench isolation structure 230 is as follows: in the semiconductor substrate 200
Surface forms photoresist layer；Graphical photoresist layer defines deep trench isolation figure；It is to cover with patterned photoresist layer
Film, along semiconductor substrate 200 described in deep trench isolation pattern etching, to obtain deep trench；The photoresist layer is removed, is then existed
Insulation material layer is formed in the semiconductor substrate 200, and the insulation material layer fills the full deep trench；To insulating materials
Layer is planarized, until exposing the semiconductor substrate 200, forms deep trench isolation structure 230.
Wherein, the insulation material layer may include silicon oxide or silicon nitride.
In other embodiments, resistance can be formed in the zanjon groove sidewall and bottom between fill insulant layer
Barrier, the problem of further preventing light crosstalk and cross talk of electrons.
With continued reference to Fig. 2, dielectric layer 240 is formed on 200 surface of semiconductor substrate, the dielectric layer 240 covers institute
State photodiode 220 and the deep trench isolation structure 230.
In the present embodiment, the material of the dielectric layer 240 is silicon oxide or silicon nitride；The medium in other embodiments
The material of layer 240 can be the high light transmittance insulating materials of polyimide.The technique for forming the dielectric layer 240 can be often
Pressure chemical vapor deposition technique (APCVD), low-pressure chemical vapor deposition process (LPCVD), secondary pressure chemical vapor deposition technique
(SACVD), plasma enhanced chemical vapor deposition technique (PECVD) or atomic vapor deposition (ALD) technique etc..
In other embodiments, one layer can also be formed in the semiconductor substrate 200 before forming dielectric layer 240
Interlayer dielectric layer, as the separation layer between buffer layer or metallic film and substrate.
Referring again to Fig. 2, photoresist layer 250 is formed on the dielectric layer 240.
In the present embodiment, the technique for forming photoresist layer 250 is spin-coating method.
It, can be described in the formation in order to prevent the dielectric layer 240 to be damaged in a lithographic process in addition to the present embodiment
Before photoresist layer 250, a protective layer is formed on the dielectric layer 240, the material of the protective layer can be nitrogen oxidation
Silicon etc..
As shown in figure 3, development is exposed to the photoresist layer 250, if it is different to form size in different pixels area
Dry ring-shaped groove figure.
In the present embodiment, feux rouges, green light and blue light are followed successively by since wave-length coverage is descending, ring width is in sub-wavelength model
It encloses, for example, can set, in red pixel area, corresponding ring-shaped groove figure ring width is 580nm~620nm, green picture
The corresponding ring-shaped groove figure ring width in plain area is 380nm~420nm, and the corresponding ring-shaped groove figure ring width in blue pixel area is
280nm~320nm.In addition, the interval width between the ring-shaped groove figure of each pixel region is equal with ring-shaped groove figure ring width
Or it is of substantially equal.It is appreciated that the ring-shaped groove figure ring width of pixel region is smaller, the ring-shaped groove figure distribution of the pixel region is got over
It is close.
As shown in figure 4, being exposure mask with photoresist layer 250 described in Fig. 3, along the ring-shaped groove pattern etching dielectric layer
240, ring-shaped groove is formed in the dielectric layer 240 of each pixel region.
In the present embodiment, when etching the dielectric layer 240, only etching removes the dielectric layer 240 of segment thickness.?
The dielectric layer 240 of residual thickness is functionally equivalent to interlayer dielectric layer in prior art in the semiconductor substrate 240
Effect for completely cutting off the electrical influence between the semiconductor substrate 200 and optical filter, while avoiding the metal being subsequently formed from expanding
Dissipate pollution substrate.
In the present embodiment, the technique for etching the dielectric layer 240 is dry etch process.
In the present embodiment, after etching technics, the ring-shaped groove that is formed on the dielectric layer 240 in red pixel area
Ring width is 580nm~620nm, and the distribution of ring-shaped groove is relatively dredged；The ring formed on the dielectric layer 240 in green pixel area
Shape groove ring width is 380nm~420nm, and the distribution of ring-shaped groove is closeer；The shape on the dielectric layer 240 in blue pixel area
At ring-shaped groove ring width be 280nm~320nm, and the distribution of ring-shaped groove is most close.
In other embodiments, if being also formed with one layer between the dielectric layer 240 and the semiconductor substrate 200
Interlayer dielectric layer can etch the dielectric layer 240 to the interlayer dielectric layer is exposed, form ring-shaped groove.
With continued reference to Fig. 4, the photoresist layer is removed.
In the present embodiment, the technique for removing the photoresist layer is cineration technics.
In other embodiments, if also forming protective layer between the photoresist layer 250 and the dielectric layer 240,
It, can first will be in ring-shaped groove pattern transfer to protective layer by etching technics during pattern transfer；Then, photoresist is removed
Layer；The ring-shaped groove figure being located on protective layer is transferred on the dielectric layer 240 by etching technics again.
As shown in figure 5, forming metallic diaphragm 260 on the dielectric layer 240, and the metallic diaphragm 260 is filled in
In the ring-shaped groove, the metallic diaphragm 260 of each pixel region is distributed in a ring.Wherein, the gold in red pixel area
The ring width for belonging to film layer 260 is maximum, and annular spread is relatively dredged；The ring width of the metallic diaphragm 260 in green pixel area is taken second place, and annular
It is distributed closeer；The ring width of the metallic diaphragm 260 in blue pixel area is minimum, and annular spread is most close.
In the present embodiment, positioned at 260 thickness of the metallic diaphragm on 240 surface of dielectric layer and positioned at the annular ditch
260 consistency of thickness of the metallic diaphragm in slot, therefore the metallic diaphragm 260 of each pixel region is also distributed in a ring.
In the present embodiment, the material of the metallic diaphragm 260 is gold, silver or copper etc..
In the present embodiment, the technique for forming the metallic diaphragm 260 is sputter coating process, vacuum evaporation process, ion
Coating process, arc-plasma depositing process or electroplating technology etc..
The metallic diaphragm 260 of each pixel region is distributed in concave-convex annular, in the one of pixel region of Fig. 7 example
In the metallic diaphragm that concave-convex annular is distributed, with different fillings differentiation elevated regions and sunk area in figure, practical elevated regions with
Sunk area be same metal material, the ring width L of the metallic diaphragm 260 of each pixel region be it is different, and ring with
Interval between ring is equal or of substantially equal with ring width, the ring width of the metallic diaphragm 260 in red pixel area be 580nm~
620nm, the ring width of the metallic diaphragm 260 in green pixel area are 380nm~420nm, the metal film in blue pixel area
The ring width of layer 260 is 280nm~320nm.
As shown in fig. 6, etching the metallic diaphragm 260 to exposing 240 surface of dielectric layer, described in annular spread
The center position of metallic diaphragm 260 forms light hole 270.
In the present embodiment, etch the metallic diaphragm 260 formed light hole 270 the specific process is as follows: in the metal
Spin coating photoresist layer in film layer 260；By photoetching process, light passing hole pattern, the light hole are formed on the photoresist layer
Figure is corresponding with 260 center of the metallic diaphragm of the annular spread；Using the photoresist layer as exposure mask, along light hole
Metallic diaphragm 260 described in pattern etching is to the exposing dielectric layer 240, respectively in the endless metal film layer of each pixel region
Heart position forms light hole 270；Remove photoresist layer.
In the present embodiment, the critical size of the light hole is the technique for etching the metallic diaphragm 260 less than 100nm
For dry etch process or focused-ion-beam lithography technique etc..
The principle of surface plasma body resonant vibration at present are as follows: metal nanoparticle is under external incident light wave electric field action, outside
The free electron of layer is polarized, and is then moved, and the generation of new electric field, generated electronics dipole concussion, referred to as office are caused
Field surface plasma resonance.
In the embodiment of the present invention, the ring width of the metallic diaphragm 260 of the annular spread of each pixel region is having a size of receiving
Meter level, the metal nanoparticle being equal in the principle of surface plasma body resonant vibration can produce ring under suitable illumination condition
The concussion of shape region surface plasma, concussion mode are transmitted along two-dimensional metallic film surface, at light hole 270, will be generated
Abnormal transmission enhancing and beam collimation phenomenon.
Theoretical according to surface plasma body resonant vibration, incident light generates plasma in the metal surface with specific period and is total to
Vibration, can make metal surface electromagnetic wave energy be doubled and redoubled, this electromagnetic wave through resonant check can be passed laterally along metal surface
It broadcasts；The light passing that incident light is propagated convergence to period center through metal surface after the resonant check of metal surface, etched by center
Hole is transmitted to the photodiode region in semiconductor substrate and realizes photoelectric conversion；Enhanced light wave converges downwards that transmission can be with again
Make up the sensitivity problem of device.
In addition, there is respective specific period since the ring width size of the metallic diaphragm 260 in different pixels area is different
Lines may be implemented to separate incident ray, obtain the monochromatic light of different wave length, complete the system of imaging sensor optical filter
Make.
It should be noted that the present embodiment is to separate feux rouges, green light with the metal bumps cyclic structure of different ring width sizes
It is illustrated with for blue light, in other embodiments, can also be divided by changing the ring width size of metal bumps cyclic structure
Light from other wavelength, the light in the wave-length coverage of black light, near infrared light can realize separation in principle.
The imaging sensor that the above method is formed includes: semiconductor substrate 200, and the semiconductor substrate 200 includes several
Pixel region；Dielectric layer 240, the dielectric layer 240 are located in the semiconductor substrate 200；Several ring-shaped grooves are located at each pixel
In the dielectric layer 240 in area, and the ring-shaped groove size in different pixels area is different；Metallic diaphragm 260, the metallic diaphragm
260 are located on the dielectric layer 240 and cover the ring-shaped groove, and the metallic diaphragm 260 of each pixel region is in recessed
Convex annular spread；Light hole 270, the light hole 270 are located at the metal of the concave-convex annular distribution of each pixel region
The center of film layer 260, and expose 240 surface of dielectric layer.
The above-mentioned metallic diaphragm with periodical lines micro-structure can replace existing filter sheet structure, then can be into
The subsequent imaging sensor manufacture craft of row, such as lenticule is formed on metallic diaphragm.
Although the present invention discloses as above in a preferred embodiment thereof, it is not for limiting the present invention, any ability
Field technique personnel without departing from the spirit and scope of the present invention, may be by the methods and technical content of the disclosure above to this
Inventive technique scheme makes possible variation and modification, therefore, anything that does not depart from the technical scheme of the invention, according to this hair
Bright technical spirit belongs to the technology of the present invention to any simple modifications, equivalents, and modifications made by embodiment of above
The protection scope of scheme.
Claims (11)
1. a kind of forming method of imaging sensor characterized by comprising
Semiconductor substrate is provided, the semiconductor substrate includes several pixel regions；
Dielectric layer is formed on the semiconductor substrate；
The dielectric layer is etched, forms several ring-shaped grooves in each pixel region, the ring-shaped groove size in different pixels area is different；
Metallic diaphragm is formed on the dielectric layer, and the metallic diaphragm covers the ring-shaped groove, each pixel region
The metallic diaphragm is distributed in concave-convex annular；
Metallic diaphragm annular distribution central area is etched to exposing the dielectric layer surface, described in concave-convex annular distribution
The center position of metallic diaphragm forms light hole.
2. the forming method of imaging sensor as described in claim 1, which is characterized in that the pixel region includes: red picture
Plain area, green pixel area and blue pixel area.
3. the forming method of imaging sensor as claimed in claim 2, which is characterized in that the annular ditch in the red pixel area
Grooved ring width is 580nm~620nm, and the ring-shaped groove ring width in the green pixel area is 380nm~420nm, the blue pixel
The ring-shaped groove ring width in area is 280nm~320nm.
4. the forming method of imaging sensor as described in claim 1, which is characterized in that the technique for forming ring-shaped groove
Include:
Photoresist layer is formed on the dielectric layer；
Development is exposed to the photoresist layer, forms the different ring-shaped groove figure of corresponding different pixels area size；
Using the photoresist layer as exposure mask, along dielectric layer described in the ring-shaped groove pattern etching, ring-shaped groove is formed；
Remove the photoresist layer.
5. the forming method of imaging sensor as described in claim 1, which is characterized in that the material of the metallic diaphragm is
Gold, silver or copper.
6. the forming method of imaging sensor as claimed in claim 5, which is characterized in that the technique for forming the metallic diaphragm
For sputter coating process, vacuum evaporation process, ion film plating technique, arc-plasma depositing process or electroplating technology.
7. the forming method of imaging sensor as described in claim 1, which is characterized in that the critical size of the light hole is
Less than 100nm.
8. the forming method of imaging sensor as described in claim 1, which is characterized in that the technique for etching the metallic diaphragm
For dry etch process or focused-ion-beam lithography technique.
9. the forming method of imaging sensor as described in claim 1, which is characterized in that the material of the dielectric layer is oxidation
The high light transmittance insulating materials of silicon or silicon nitride or polyimide.
10. the forming method of imaging sensor as claimed in claim 9, which is characterized in that the technique for forming the dielectric layer
For aumospheric pressure cvd technique, low-pressure chemical vapor deposition process, secondary pressure chemical vapor deposition technique, plasma enhancing
Chemical vapor deposition process or atomic vapor deposition technique.
11. a kind of imaging sensor characterized by comprising
Semiconductor substrate, the semiconductor substrate include several pixel regions；
Dielectric layer is located in the semiconductor substrate；
Several ring-shaped grooves, in the dielectric layer of each pixel region, and the ring-shaped groove size in different pixels area is different；
Metallic diaphragm, is located on the dielectric layer and the covering ring-shaped groove, the metallic diaphragm of each pixel region are in
Concave-convex annular distribution；
Light hole positioned at the center of the metallic diaphragm of concave-convex annular distribution, and exposes the dielectric layer.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111697017A (en) * | 2020-04-08 | 2020-09-22 | 吴永芬 | Image sensor and preparation method thereof |
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Application publication date: 20190809 |