CN102299160A - Imaging sensing component and manufacturing method thereof - Google Patents
Imaging sensing component and manufacturing method thereof Download PDFInfo
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- CN102299160A CN102299160A CN2010102163787A CN201010216378A CN102299160A CN 102299160 A CN102299160 A CN 102299160A CN 2010102163787 A CN2010102163787 A CN 2010102163787A CN 201010216378 A CN201010216378 A CN 201010216378A CN 102299160 A CN102299160 A CN 102299160A
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Abstract
An imaging sensing component comprises a substrate, an epitaxial layer, a photodiode and a first deep well, wherein the substrate is provided with a first conductive type; the epitaxial layer is provided with a first conductive type and is arranged on the substrate, the epitaxial layer comprises a first pixel region corresponding to first incident light and a second pixel region corresponding to second incident light, the wavelength of the first incident light is greater than that of the second incident light; the photodiode is arranged on the upper part of the epitaxial layer; the first deep well is used to decrease cross talk between pixels of the imaging sensing component and is arranged on the lower part of the epitaxial layer in the second pixel region, wherein at least a part of the first pixel region of the epitaxial layer does not include the fist deep well.
Description
Technical field
The present invention relates to a kind of Image Sensor and its manufacture method, particularly a kind of Image Sensor and its manufacture method with crosstalk between less pixel and pixel (cross talk).
Background technology
Image sensor changes into the signal of telecommunication with light signal.Now, development along with computer and telecommunications industry, the increase in demand of high efficiency image sensor, and it can be applicable to various fields, for example digital camera, Video Camera, person communication system, game elements, monitor, therapeutic medical microfacies machine, robot etc.
The unit picture element of image sensor converts incident light to the signal of telecommunication, and uses optical-electrical converter (photoelectric converter) to convert the light of corresponding amount to electric charge.In addition, the unit picture element of image sensor can duplicate signal of video signal via read operation.Yet, incident light may form the electric charge that is not positioned at optical-electrical converter, for instance, in complementary metal oxide semiconductor (CMOS) image sensor, carrier is movable to the transducer of neighbor and changes at this transducer, and then forms crosstalking between known pixel and pixel (cross talk).
Please refer to Fig. 1, crosstalking between pixel and pixel can be divided into following kind: one, optical crosstalk (optical crosstalk) A, it takes place when reverberation 6 is injected the neighbor of unit picture element of optical-electrical converter 25, reverberation 6 is to reflect to form by the top of plain conductor M1, M2 and M3 and sidepiece, and perhaps refract light is by uneven layer or comprises that the sandwich construction refraction of the inner insulation layer with different refraction coefficients forms; Two, cross talk of electrons (electrical crosstalk) B, its when long wavelength's incident light 7 in the bottom of the optical-electrical converter 2 of unit picture element or the electric charge that produces of the sidepiece optical-electrical converter 2 that is sent to the adjacent cells pixel produce.
When crosstalking, can lower resolution, cause deformation of image for the black-and-white image transducer.(color filter array CFA), because the probability that the red light of longer wavelength is crosstalked is quite high, more can have a strong impact on image quality for the colour filter array that uses RGB.Moreover crosstalking to cause the dizzy effect (blooming effect) of dying of neighbor, makes image fog unclear.
Summary of the invention
According to above-mentioned, the invention provides a kind of Image Sensor, comprise substrate, have first conductivity; Epitaxial loayer with first conductivity is positioned in the substrate, and wherein epitaxial loayer comprises that wherein the first incident light wavelength is greater than the second incident light wavelength corresponding to first pixel region of first incident light with corresponding to second pixel region of second incident light; Optical diode is arranged at the top part of epitaxial loayer; The pixel that is used for reducing Image Sensor is arranged in the bottom part of the second pixel region epitaxial loayer to first deep trap of crosstalking between pixel, and wherein epitaxial loayer does not comprise first deep trap to small part first pixel region.
The invention provides a kind of manufacture method of Image Sensor, comprise substrate is provided, have first conductivity; Formation has the epitaxial loayer of first conductivity in substrate, wherein epitaxial loayer comprise first pixel region corresponding to first incident light, corresponding to second pixel region of second incident light with corresponding to the 3rd pixel region of the 3rd incident light, wherein the first incident light wavelength is greater than the second incident light wavelength, and the second incident light wavelength is greater than the 3rd incident light wavelength; Use mask, carry out injection technology, form first deep trap in the bottom of epitaxial loayer part, be used for reducing between the pixel of Image Sensor and crosstalk, wherein mask has cap rock corresponding to the part of first pixel region, but the part corresponding to the second and the 3rd pixel region exposes, and can form first deep trap at the second and the 3rd pixel region of epitaxial loayer so inject, and epitaxial loayer does not comprise first deep trap to small part first pixel region; And form optical diode, in the top of epitaxial loayer part.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below:
Description of drawings
Fig. 1 shows the profile of traditional Image Sensor.
The pixel of Fig. 2 show image transducer, it comprises the problem that the applicant finds.
Fig. 3 shows that relative quantum efficient is the longitudinal axis, and wavelength is R, the G of transverse axis, the curve chart of B light.
Fig. 4 A shows the profile of the green pixel structure of embodiment of the invention Image Sensor.
Fig. 4 B shows the profile of the blue pixel structure of embodiment of the invention Image Sensor.
Fig. 4 C shows the profile of the red pixel structure of embodiment of the invention Image Sensor.
Fig. 5 shows that embodiment of the invention novel pixel buries the trap mask.
Fig. 6 shows the profile of the red pixel structure of another embodiment of the present invention Image Sensor.
Fig. 7 shows the profile of the red pixel structure of another embodiment of the present invention Image Sensor.
Fig. 8 A shows the profile of the green pixel structure of another embodiment of the present invention Image Sensor.
Fig. 8 B shows the profile of the blue pixel structure of another embodiment of the present invention Image Sensor.
Fig. 8 C shows the profile of the red pixel structure of another embodiment of the present invention Image Sensor.
Fig. 9 A shows the present invention's profile of the green pixel structure of another embodiment Image Sensor again.
Fig. 9 B shows the present invention's profile of the blue pixel structure of another embodiment Image Sensor again.
Fig. 9 C shows the present invention's profile of the red pixel structure of another embodiment Image Sensor again.
Figure 10 A shows the present invention's profile of the green pixel structure of another embodiment Image Sensor again.
Figure 10 B shows the present invention's profile of the blue pixel structure of another embodiment Image Sensor again.
Figure 10 C shows the present invention's profile of the red pixel structure of another embodiment Image Sensor again.
Embodiment
The profile of Fig. 2 show image transducer discloses the problem that the inventor finds, and narrates this problem at the following Fig. 2 that can cooperate.Please refer to Fig. 2, growth P type epitaxial loayer 204 in P type substrate 202.The optical diode 206 that comprises N trap 208 and P type pinning layer 210 (pin layer) is arranged at P type epitaxial loayer 204, and the one side is in abutting connection with transmission grid 212.The optical diode 206 of this pixel with shallow trench isolation from 214 structures and P isolation well 216 and other pixel isolation.In order to suppress crosstalking between pixel and pixel, P type epitaxial loayer 204 carries out ion and injects, with form for 206 times at optical diode the dark P trap 218 of pixel (pixel deep p well, DPW) and the dark N trap 220 of pixel (pixel deep n well, DNW).
Fig. 3 shows that relative quantum efficient is the longitudinal axis, and wavelength is R, the G of transverse axis, the curve chart of B light.As shown in the figure, though above-mentioned technology can reduce pixel to the crosstalking of pixel, this image sensor is lower for the quantum efficiency of long wavelength's light (ruddiness).The dark N trap 220 of dark P trap 218 of pixel and pixel forms the resistance barrier of current potential, so the electric charge that the dark zone of epitaxial loayer 204 is produced is prevented from flowing into the optical diode of neighbor.Therefore, dark P trap 218 of pixel and the dark N trap 220 of pixel have hindered crosstalking between the pixel of drift electric charge at random.
For instance, dark P trap and dark N trap can have maximum concentration from the degree of depth of epi-layer surface 3-10 μ m, and its thickness is about 1-5 μ m.At this, the degree of depth of the 3-10 μ m absorption degree of depth with ruddiness or the light close with ruddiness substantially is identical substantially.The degree of depth from epitaxial loayer 204 surfaces shoals when dark P trap 218 of pixel and the dark N trap 220 of pixel, and diffusion prevents that effect from increasing, and therefore, can reduce and crosstalk.Yet because optical diode 206 also shoals, the photosensitivity for the incident light with long wavelength (having high-photoelectric transformation efficiency) of for example ruddiness may reduce in dark zone.Therefore, though above-mentioned method has reduced pixel to the crosstalking of pixel, sacrificed the quantum efficiency of long wavelength light (particularly ruddiness).In addition, the problems referred to above produce R, G, B quantum efficiency gap (gap), hinder Signal Processing.
Fig. 4 A～4C shows the profile of embodiment of the invention green pixel, blue pixel and red pixel, and the technology of this embodiment can suppress to crosstalk, and can keep enough good quantum efficiency.Fig. 4 A shows the green pixel structure, and Fig. 4 B shows the blue pixel structure, and Fig. 4 C shows the red pixel structure.Please refer to Fig. 4 A, Fig. 4 B and Fig. 4 C, substrate 402 is provided.In the present embodiment, substrate 402 can be the P type substrate that for example comprises boron.Growth P type epitaxial loayer 404 in substrate 402.But P type epitaxial loayer 404 doped with boron.In example of the present invention, P type epitaxial loayer 404 can chemical vapour deposition technique or molecular beam epitaxy (molecular beam epitaxy, MBE) formation.In an embodiment, the thickness of P type epitaxial loayer 404 is about 3-10 μ m.Use novel pixel to bury trap mask 502 (mask as shown in Figure 5) and inject P type epitaxial loayer 404, to form dark P trap 406 and the dark N trap 408 that is positioned under the dark P trap 406.It should be noted that mask shown in Figure 5 502 corresponding red pixel districts 504 have cap rock, expose for green pixel district 506 and blue pixel district 508.Therefore, the epitaxial loayer 404 that ion implantation technology only can be mixed green pixel district 506 and blue pixel district 508 form dark P trap 406 and dark N trap 408, and does not mix in the red pixel district 504 of the small part that arrives.In other words, the image sensing district of present embodiment has dark P trap 406 and dark N trap 408 in green pixel district 506 and blue pixel district 508, but does not comprise dark P trap and dark N trap to the red pixel district 504 of small part.The size that does not comprise the zone 410 of dark P trap and dark N trap in the red pixel district 504 can be by product specification and process conditions decision.In an embodiment, as shown in Figure 6, the size that does not comprise dark P trap and dark N well area 410a in the red pixel district is less than pixel region.In another embodiment, as shown in Figure 7, the size that does not comprise dark P trap and dark N well area 410b in the red pixel district is greater than pixel region.
Please back with reference to Fig. 4 A, Fig. 4 B and Fig. 4 C, form isolation structure 412 in epitaxial loayer 404, isolation structure 412 can be shallow trench isolation from (STI) or field oxide, isolation structure 412 is good with shallow trench isolation from (STI).Use ion implantation technology to form to isolate P trap 414 in isolation structure 412 times.Form transmission grid 416 (transfer gate) in the surface of epitaxial loayer 404.In an embodiment, transmission grid 416 can comprise gate dielectric layer 418, is positioned at the grid conducting layer 420 on the gate dielectric layer 418 and is positioned at the clearance wall 422 of grid conducting layer 420 sidewalls.The transmission grid can form by the following step: at first, form gate dielectric layer 418 on epitaxial loayer 404.Then, form grid conducting layer 420 on gate dielectric layer 418.Follow-up, with photoetching and etch process patterning grid conductive layer 420 and gate dielectric layer 418.Form gap parietal layer (not shown) on the grid conducting layer 420 and epitaxial loayer 404 of patterning, follow-up, anisotropic etching gap parietal layer forms clearance wall 422 with the sidewall at patterning grid conductive layer 420.Epitaxial loayer 404 is carried out ion implantation technology,, thereby form optical diode 428 with formation N trap 424 and P type pinning layer 426 (pin layer) structure.
The above-mentioned Image Sensor of the present invention can solve the problem that has long wavelength's incident light (for example red light) photosensitivity attenuating of high-photoelectric transformation efficiency in dark zone.And, Image Sensor and its manufacture method that the present invention is above-mentioned can be improved quantum efficiency compared to conventional art, make redness, green and blue light that good balance be arranged, and can not increase unnecessary processing step and the pixel performance be produced under the negative influence, reduction be crosstalked.
The above embodiment of the present invention is described N type Image Sensor, yet the present invention is not subject to N type Image Sensor, and the present invention also can be used in P type Image Sensor.
Fig. 8 A～8C shows the profile of green pixel, blue pixel and the red pixel of embodiment of the invention P type image sensor, and the technology of this embodiment can suppress to crosstalk, and can keep enough good quantum efficiency.Fig. 8 A shows the green pixel structure, and Fig. 8 B shows the blue pixel structure, and Fig. 8 C shows the red pixel structure.Please refer to Fig. 8 A, Fig. 8 B and Fig. 8 C, substrate 802 is provided.Growth N type epitaxial loayer 804 on present embodiment 802.In an embodiment, the thickness of N type epitaxial loayer 804 is about 3-10 μ m.Use novel pixel to bury the trap mask and inject N type epitaxial loayer 804, to form dark N trap 806 and the dark P trap 808 that is positioned under the dark N trap 806.It should be noted that pixel buries the corresponding red pixel of trap mask district 810 and have cap rock, expose for green pixel district 812 and blue pixel district 814.Therefore, only can the mix epitaxial loayer 804 in green pixel district 812 and blue pixel district 814 of ion implantation technology, forming dark N trap 806 and dark P trap 808, and do not mix in the red pixel district 810 of the small part that arrives.In other words, the image sense lateral areas of present embodiment has dark N trap 806 and dark P trap 808 in green pixel district 812 and blue pixel district 814, but does not comprise dark N trap and dark P trap to the red pixel district 810 of small part.The size that does not comprise the zone 816 of dark N trap 806 and dark P trap 808 in the red pixel district can be by product specification and process conditions decision.In an embodiment, do not comprise in the red pixel district 810 that the size in the dark N trap 806 and the zone 816 of dark P trap 808 is less than pixel region.In another embodiment, do not comprise in the red pixel district 810 that the size of dark N trap and dark P well area is greater than pixel region.
Shown in Fig. 8 A, Fig. 8 B and Fig. 8 C, form isolation structure 818 in epitaxial loayer 804, isolation structure 818 can be shallow trench isolation from (STI) or field oxide, isolation structure 818 is good with shallow trench isolation from (STI).Use ion implantation technology to form to isolate N trap 820 in isolation structure 818 times.Form transmission grid 822 (transfer gate) in the surface of epitaxial loayer 804.In an embodiment, transmission grid 822 can comprise gate dielectric layer 824, is positioned at the grid conducting layer 826 on the gate dielectric layer 824 and is positioned at the clearance wall 828 of grid conducting layer 826 sidewalls.Carry out ion implantation technology,, thereby form optical diode 834 with formation P trap 830 and N type pinning layer 832 (pin layer).
Fig. 9 A～9C shows the profile of green pixel, blue pixel and the red pixel of another embodiment of the present invention image sensor, and the technology of this embodiment can suppress to crosstalk, and can keep enough good quantum efficiency.Fig. 9 A shows the green pixel structure, and Fig. 9 B shows the blue pixel structure, and Fig. 9 C shows the red pixel structure.The embodiment of Fig. 4 A～4C and Fig. 9 A～9C embodiment do not exist together for: in the embodiment of Fig. 4 A～4C, the red pixel of part does not comprise dark P trap and dark N trap, and in the embodiment of Fig. 9 A～9C, the red pixel of part does not only comprise dark P trap, but has dark N trap.
Please refer to Fig. 9 A～9C, substrate 902 is provided.In the present embodiment, substrate 902 can be the substrate of P type.Growth P type epitaxial loayer 904 in substrate 902.In an embodiment, the thickness of P type epitaxial loayer 904 is about 3-10 μ m.Use novel pixel to bury the trap mask and inject P type epitaxial loayer 904, to form dark P trap 906.It should be noted that above-mentioned novel pixel buries the corresponding red pixel of the mask shown in trap mask district 908 and have cap rock, expose for green pixel district 910 and blue pixel district 912.Therefore, only can the mix epitaxial loayer 904 in green pixel district 910 and blue pixel district 912 of ion implantation technology, forming dark P trap 906, and do not mix in the red pixel district 908 of the small part that arrives.In addition, P type epitaxial loayer 904 also carries out injection technology, to form dark N trap 914 for 906 times at dark P trap.It should be noted that the epitaxial loayer 904 in this ion implantation technology doping green and blue pixel district 910,912, form dark P trap 906.That is the image sensor of present embodiment does not comprise dark P trap in red pixel district 908, but comprises dark N trap 914.It should be noted that green and blue pixel district comprise dark P trap 906 and dark N trap 914.
Please continue A～9C, form isolation structure 913 in epitaxial loayer 904 with reference to Fig. 9.Use ion implantation technology to form to isolate P trap 916 in isolation structure 913 times.Form transmission grid 918 (transfergate) in the surface of epitaxial loayer 904.Epitaxial loayer is carried out ion implantation technology,, thereby form optical diode 924 with formation N trap 920 and P type pinning layer 922 (pin layer).
Figure 10 A～10C shows the present invention's profile of green pixel, blue pixel and the red pixel of another embodiment image sensor again, and the technology of this embodiment can suppress to crosstalk, and can keep enough good quantum efficiency.Figure 10 A shows the green pixel structure, and Figure 10 B shows the blue pixel structure, and Figure 10 C shows the red pixel structure.The embodiment of Fig. 4 A～4C and Figure 10 A～10C embodiment do not exist together for: in the embodiment of Fig. 4 A～4C, the red pixel of part does not comprise dark P trap and dark N trap, and in the embodiment of Figure 10 A～10C, the red pixel of part does not only comprise dark N trap, but has dark P trap.
Please refer to Figure 10 A～10C, substrate 1002 is provided.In the present embodiment, substrate 1002 can be the substrate of P type.Growth P type epitaxial loayer 1004 in substrate 1002.In an embodiment, the thickness of P type epitaxial loayer 1004 is about 3-10 μ m.Inject P type epitaxial loayer 1004, to form dark P trap 1006.It should be noted that dark P trap is all arranged in red pixel district 1008, green pixel district 1010 and the blue pixel district 1012.Use novel pixel to bury the trap mask and inject P type epitaxial loayer 1004, to form dark N trap 1014 for 1006 times at dark P trap.It should be noted that above-mentioned novel pixel buries the corresponding red pixel of the mask shown in trap mask district 1008 and have cap rock, expose for green pixel district 1010 and blue pixel district 1012.Therefore, only can the mix epitaxial loayer 1004 in green pixel district 1010 and blue pixel district 1012 of ion implantation technology, forming dark N trap 1014, and the red pixel district 1008 of the small part that arrives does not comprise dark N trap.That is the image sensor of present embodiment does not comprise dark N trap in red pixel district 1008, but comprises dark P trap 1006.It should be noted that green and blue pixel district 1010,1012 comprise dark P trap 1006 and dark N trap 1014.
Please continue A～10C, form isolation structure 1013 in epitaxial loayer 1004 with reference to Figure 10.Use ion implantation technology to form to isolate P trap 1016 in isolation structure 1013 times.Form transmission grid 1018 (transfer gate) in the surface of epitaxial loayer 1004.Epitaxial loayer 1004 is carried out ion implantation technology,, thereby form optical diode 1024 with formation N trap 1020 and P type pinning layer 1022 (pin layer).
Image Sensor and its manufacture method that the present invention is above-mentioned can be improved quantum efficiency compared to conventional art, make redness, green and blue light that good balance be arranged, and can not increase unnecessary processing step and show under the negative influence for pixel, and reduction is crosstalked.
Though the present invention has disclosed preferred embodiment as above; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can making a little modification and modification, so protection scope of the present invention defines and is as the criterion when looking appended claim.
Claims (20)
1. Image Sensor comprises:
Substrate has first conductivity;
Epitaxial loayer, has described first conductivity, be positioned in the described substrate, wherein said epitaxial loayer comprises that the wherein said first incident light wavelength is greater than the described second incident light wavelength corresponding to first pixel region of first incident light with corresponding to second pixel region of second incident light;
Optical diode is arranged at the top part of described epitaxial loayer;
The pixel that is used for reducing described Image Sensor is positioned at the bottom part of epitaxial loayer described in described second pixel region to first deep trap of crosstalking between pixel, wherein said epitaxial loayer to small part first pixel region, do not comprise described first deep trap.
2. Image Sensor as claimed in claim 1, also comprise the 3rd pixel region corresponding to the 3rd incident light, the wherein said second incident light wavelength is greater than described the 3rd incident light wavelength, and be used for reducing first deep trap of crosstalking between the pixel of described Image Sensor, also be arranged in the bottom part of described the 3rd pixel region epitaxial loayer.
3. Image Sensor as claimed in claim 2, wherein said first incident light are that red light, described second incident light are green light, and described the 3rd incident light is a blue light.
4. Image Sensor as claimed in claim 2, wherein said first deep trap has described first conductivity, and described Image Sensor also includes second deep trap of described second conductivity, is positioned under described first deep trap.
5. Image Sensor as claimed in claim 4, wherein said first conductivity is the P type, described second conductivity is the N type.
6. Image Sensor as claimed in claim 2, wherein said second deep trap are arranged at described second pixel region and described the 3rd pixel region at least, and do not comprise described second deep trap to described first pixel region of small part.
7. Image Sensor as claimed in claim 1, wherein said first conductivity is the N type.
8. Image Sensor as claimed in claim 4, wherein said second deep trap are arranged in described first, second and the 3rd pixel region at least, and described first pixel region do not comprise the part of described first deep trap, but comprise described second deep trap.
9. Image Sensor as claimed in claim 2, wherein said first deep trap has second conductivity, and described Image Sensor also comprises second deep trap with described first conductivity, is positioned at substantially on described first deep trap.
10. Image Sensor as claimed in claim 9, wherein said second deep trap are arranged in described first, second and the 3rd pixel region at least, and described first pixel region do not comprise the part of described first deep trap, but comprise described second deep trap.
11. Image Sensor as claimed in claim 1, the size in zone that does not wherein comprise described first deep trap is less than the size of described first pixel region.
12. Image Sensor as claimed in claim 1, the size in zone that does not wherein comprise described first deep trap is greater than the size of described first pixel region.
13. Image Sensor as claimed in claim 1, wherein said optical diode comprise the trap of second conductivity and the pinning layer of described first conductivity.
14. Image Sensor as claimed in claim 2, wherein said first, second and the 3rd pixel range are to separate with isolation structure, and described isolation structure below comprises isolation well.
15. the manufacture method of an Image Sensor comprises:
Substrate is provided, has first conductivity;
Formation has the epitaxial loayer of described first conductivity in described substrate, wherein said epitaxial loayer comprises first pixel region corresponding to first incident light, corresponding to second pixel region of second incident light with corresponding to the 3rd pixel region of the 3rd incident light, the wherein said first incident light wavelength is greater than the described second incident light wavelength, and the described second incident light wavelength is greater than described the 3rd incident light wavelength;
Use mask, carry out injection technology, form first deep trap in the bottom of described epitaxial loayer part, be used for reducing between the pixel of described Image Sensor and crosstalk, wherein said mask has cap rock corresponding to the part of described first pixel region, but the part corresponding to the described second and the 3rd pixel region exposes, so described injection technology can form described first deep trap in the second and the 3rd pixel region of described epitaxial loayer, described epitaxial loayer does not comprise described first deep trap to described first pixel region of small part; And
Form optical diode, in the top of described epitaxial loayer part;
16. the manufacture method of Image Sensor as claimed in claim 15, wherein said first incident light are that red light, described second incident light are green light, and described the 3rd incident light is a blue light.
17. the manufacture method of Image Sensor as claimed in claim 15 comprises also forming second deep trap under first deep trap of the bottom of described epitaxial loayer part that wherein said first deep trap is first conductivity, described second deep trap is second conductivity.
18. the manufacture method of Image Sensor as claimed in claim 17, wherein said first conductivity is the P type, and described second conductivity is the N type.
19. the manufacture method of Image Sensor as claimed in claim 17, wherein said second deep trap are arranged in described second pixel region and described the 3rd pixel region at least, and do not comprise described second deep trap to described first pixel region of small part.
20. the manufacture method of Image Sensor as claimed in claim 15, the step that wherein forms described optical diode comprise the trap that forms second conductivity and the pinning layer of first conductivity.
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| CN106298820A (en) * | 2015-05-28 | 2017-01-04 | 力晶科技股份有限公司 | Image sensor and manufacturing method thereof |
| CN107957299A (en) * | 2017-11-27 | 2018-04-24 | 电子科技大学 | A kind of carborundum linear temperature sensor and its temp measuring method and manufacture method |
| CN108807440A (en) * | 2018-06-14 | 2018-11-13 | 上海华力集成电路制造有限公司 | Cmos image sensor and preparation method thereof |
| CN108881748A (en) * | 2017-05-10 | 2018-11-23 | 宝视纳股份公司 | Image processing apparatus and method, digital camera, computer equipment and program product |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106298820A (en) * | 2015-05-28 | 2017-01-04 | 力晶科技股份有限公司 | Image sensor and manufacturing method thereof |
| CN106298820B (en) * | 2015-05-28 | 2019-10-11 | 力晶积成电子制造股份有限公司 | Image sensor and manufacturing method thereof |
| CN108881748A (en) * | 2017-05-10 | 2018-11-23 | 宝视纳股份公司 | Image processing apparatus and method, digital camera, computer equipment and program product |
| CN108881748B (en) * | 2017-05-10 | 2022-07-01 | 宝视纳股份公司 | Image processing apparatus and method, digital camera, computer device, and program product |
| CN107957299A (en) * | 2017-11-27 | 2018-04-24 | 电子科技大学 | A kind of carborundum linear temperature sensor and its temp measuring method and manufacture method |
| CN107957299B (en) * | 2017-11-27 | 2019-12-27 | 电子科技大学 | Silicon carbide linear temperature sensor and temperature measuring method and manufacturing method thereof |
| CN108807440A (en) * | 2018-06-14 | 2018-11-13 | 上海华力集成电路制造有限公司 | Cmos image sensor and preparation method thereof |
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Application publication date: 20111228 |