CN110097858A - Source electrode driver - Google Patents
Source electrode driver Download PDFInfo
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- CN110097858A CN110097858A CN201810156962.4A CN201810156962A CN110097858A CN 110097858 A CN110097858 A CN 110097858A CN 201810156962 A CN201810156962 A CN 201810156962A CN 110097858 A CN110097858 A CN 110097858A
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- voltage
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- 239000004973 liquid crystal related substance Substances 0.000 description 2
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Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3685—Details of drivers for data electrodes
- G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
Abstract
The present invention discloses a kind of source electrode driver.Source electrode driver includes the first operational amplifier, booster circuit and the first alteration switch unit.First operational amplifier is controlled by control signal, and the maximum potential for controlling signal is operating voltage.Booster circuit controls signal to boost as boost voltage and generate alteration switch accordingly operating voltage, and wherein the maximum potential of alteration switch control signal is boost voltage, and boost voltage is higher than operating voltage.First alteration switch unit couples the first operational amplifier.There is conducting resistance when the first alteration switch unit is controlled by alteration switch control signal and is connected.If having original conducting resistance when the first alteration switch unit is controlled by control signal and is connected, conducting resistance is less than original conducting resistance.
Description
Technical field
The present invention is related with display device, especially with respect to a kind of source electrode driver applied to display device.
Background technique
In general, the size with liquid crystal display panel is more and more big, it is defeated for the driving IC of display device
It loads and also more and more weighs out, cause the driving IC of display device that can face the excessively high problem of temperature.
Specifically, in traditional source electrode driver, friendship that the output end of the operational amplifier in each channel is coupled
Switch is changed, the maximum potential of control signal would generally be identical as the control signal of operational amplifier, is operating voltage, causes
The equivalent impedance (that is, conducting resistance On-resistance) of alteration switch can not be effectively reduced, so that operational amplifier returns
Rate of rotation (Slew rate) is bad.When operational amplifier flows through biggish lead to output electric current caused by load charge or discharge
When energization resistance, i.e., it can generate biggish power loss and cause to drive the temperature of IC excessively high, it would be highly desirable to overcome.
Summary of the invention
In view of this, the present invention proposes a kind of source electrode driver, with above-mentioned kind for effectively solving that the prior art is suffered from
Kind problem.
A specific embodiment according to the present invention is a kind of source electrode driver.In this embodiment, source electrode driver includes
First operational amplifier, booster circuit and the first alteration switch unit.First operational amplifier is controlled by control signal, and controls
The maximum potential of signal is operating voltage.Booster circuit is opened to boost as boost voltage and generate exchange accordingly operating voltage
Control signal is closed, wherein the maximum potential of alteration switch control signal is boost voltage, and boost voltage is higher than operating voltage.The
One alteration switch unit couples the first operational amplifier.It is led when the first alteration switch unit is controlled by alteration switch control signal
There is conducting resistance when logical.Wherein, if having original electric conduction when the first alteration switch unit is controlled by control signal and is connected
Resistance, then conducting resistance is less than original conducting resistance.
In an embodiment, when the output electric current that the first operational amplifier is exported flows through the first friendship with conducting resistance
Consumption power can be generated when changing switch unit, and consumption power flows through first with original conducting resistance less than the output electric current
Generated original consumption power when alteration switch unit.
In an embodiment, temperature rise caused by power is consumed lower than original temperature caused by original consumption power
Spend ascending amount.
In an embodiment, source electrode driver further includes second operational amplifier and the second alteration switch unit.The
Two operational amplifiers are controlled by operating voltage.Second alteration switch unit couples second operational amplifier, when the second alteration switch
Unit has conducting resistance when being controlled by alteration switch control signal and being connected, and conducting resistance is less than original conducting resistance.
In an embodiment, when the output electric current that second operational amplifier is exported flows through the second friendship with conducting resistance
Consumption power can be generated when changing switch unit, which is less than output electric current is flowed through with original conducting resistance second and hands over
Change generated original consumption power when switch unit.
In an embodiment, temperature rise caused by power is consumed lower than original temperature caused by original consumption power
Spend ascending amount.
In an embodiment, source electrode driver further includes sequential control circuit (Sequence control
Circuit), it is coupled between booster circuit and the first alteration switch unit and is controlled by boost voltage.
In an embodiment, booster circuit is charge pump (Charge pump) circuit.
In an embodiment, charge pump circuit includes first switch, second switch, third switch, the 4th switch and capacitor.
First switch and second switch are serially connected between operating voltage and ground voltage and third switch switchs with the 4th and is serially connected with work
Voltage and boost voltage subtract between the voltage difference of operating voltage, and one end of capacitor is coupled between first switch and second switch
And the other end of capacitor is coupled between third switch and the 4th switch, first switch is controlled by the first clock pulse letter with the 4th switch
Number and second switch and third switch be controlled by the second clock signal, the first clock signal and the second clock signal are inverting each other.
In an embodiment, booster circuit is bootstrap mode circuit (Bootstrap circuit).
In an embodiment, bootstrap mode circuit includes first switch, second switch, first resistor, second resistance, diode
And capacitor.First switch is serially connected between operating voltage and ground voltage with first resistor and second resistance is concatenated with second switch
It is subtracted between the voltage difference of operating voltage and ground voltage in boost voltage, one end of capacitor is coupled to first switch and the first electricity
Between resistance and the other end of capacitor is coupled to the voltage difference that boost voltage subtracts operating voltage, diode be coupled to operating voltage with
Between boost voltage, first switch is also coupled between second resistance and second switch, and second switch is controlled by clock signal.
Compared to the prior art, source electrode driver according to the present invention is to utilize booster circuit by the friendship in source electrode driver
The maximum potential for changing switch control signal is improved the electric conduction for causing alteration switch to a boost voltage by the operating voltage of script
Resistance becomes smaller therewith, in addition to that can reduce consumption power of the alteration switch when exporting electric current and flowing through, source drive is effectively reduced
Except the temperature of device, the revolution rate of the operational amplifier in each channel also can be improved, therefore effectively the prior art can be overcome to be suffered from
The problem of.
It can be obtained further by detailed description of the invention below and institute's accompanying drawings about the advantages and spirit of the present invention
Solution.
Detailed description of the invention
Fig. 1 is the schematic diagram of the source electrode driver in a preferred embodiment of the invention.
Fig. 2 is the embodiment that booster circuit is charge pump circuit.
Fig. 3 is the embodiment that booster circuit is bootstrap mode circuit.
Fig. 4 is that the alteration switch control signal with different maximum potentials causes alteration switch to have different conducting resistances
Curve graph.
Fig. 5 A is the comparison figure of the alteration switch control signal before and after pressurized treatment；Fig. 5 B is that the waveform of output signal is increased
The comparison figure of the influence of the alteration switch control signal of pressure before and after the processing.
Fig. 6 is the comparison figure that alteration switch controls influence of the signal pressurization front and back to the conducting resistance of alteration switch.
Main element symbol description:
SD: source electrode driver
PDAC: the first digital analog converter
NDAC: the second digital analog converter
MUX: multiplexer
OP1: the first operational amplifier
OP2: second operational amplifier
SU1: the first alteration switch unit
SU2: the second alteration switch unit
BVC: booster circuit
SC: sequential control circuit
OUT1: the first output end
OUT2: second output terminal
+: positive input terminal
: negative input end
AVDD: operating voltage
STB: alteration switch controls signal
VBST: boost voltage
IOUT: output electric current
SW1~SW4: first switch~the 4th switch
C1: capacitor
GND: ground voltage
VBST-AVDD: boost voltage subtracts the voltage difference of operating voltage
CLK1~CLK2: the first clock signal~the second clock signal
CLK: clock signal
M1~M2: the first transistor switch~second transistor switch
R1~R2: first resistor~second resistance
D: diode
RON: conducting resistance
VG1~VG3: maximum potential
VDS1: drain-source voltage
VMIN: potential minimum
RON1~RON3: conducting resistance
STB1~STB3: alteration switch controls signal
ON: open state
OFF: closed state
STB0: original switching switch control signal
SOUT: output signal
SOUT0: primary output signal
T0~T8: time
RON0: original conducting resistance
Specific embodiment
A specific embodiment according to the present invention is a kind of source electrode driver.In this embodiment, source electrode driver setting
In display device, to be driven to liquid crystal display panel.
Please refer to Fig. 1, the schematic diagram of Fig. 1 source electrode driver in embodiment thus.As shown in Figure 1, source electrode driver SD
Include the first digital analog converter PDAC, the second digital analog converter NDAC, multiplexer MUX, the first operational amplifier
OP1, second operational amplifier OP2, the first alteration switch cell S U1, the second alteration switch cell S U2, booster circuit BVC, when
Sequence control circuit SC, the first output end OUT1 and second output terminal OUT2.
The output end of first digital analog converter PDAC and the second digital analog converter NDAC are respectively coupled to multiplexing
Two input terminals of device MUX；Two output ends of multiplexer MUX are respectively coupled to the first operational amplifier OP1 and the second operation amplifier
The positive input terminal of device OP2+；The negative input end-of first operational amplifier OP1 and second operational amplifier OP2 is respectively coupled to it
The output end of itself；The output end of first operational amplifier OP1 and second operational amplifier OP2 is respectively coupled to the first exchange and opens
Close cell S U1 and the second alteration switch cell S U2；Booster circuit BVC is coupled to sequential control circuit SC；Sequential control circuit SC
It is respectively coupled to the first alteration switch cell S U1 and the second alteration switch cell S U2；First output end OUT1 is respectively coupled to first
Alteration switch cell S U1 and the second alteration switch cell S U2；Second output terminal OUT2 is respectively coupled to the first alteration switch unit
SU1 and the second alteration switch cell S U2.
First operational amplifier OP1 and second operational amplifier OP2 are controlled by operating voltage AVDD.First operation amplifier
The output end of device OP1 and second operational amplifier OP2 export respectively an output current IO UT to the first alteration switch cell S U1 and
Second alteration switch cell S U2.
When booster circuit BVC receives operating voltage AVDD, booster circuit BVC can boost to operating voltage AVDD
Boost voltage VBST is formed after processing, is generated the alteration switch control exchange of signal STB to first further according to boost voltage VBST and is opened
Close cell S U1 and the second alteration switch cell S U2.
It should be noted that alteration switch controls the maximum potential of signal STB as boost voltage VBST, and boost voltage VBST
Operating voltage AVDD can be higher than.In fact, boost voltage VBST can have a proportionate relationship with operating voltage AVDD and can be according to
Actual demand and adjust it, such as boost voltage VBST be 1.5 times of operating voltage AVDD or 2 times of operating voltage AVDD, but
It is not limited.
In addition, may be used also between booster circuit BVC and the first alteration switch cell S U1 and the second alteration switch cell S U2
It is coupled with sequential control circuit SC.Sequential control circuit SC is controlled by boost voltage VBST, controls alteration switch to control
Signal STB is sent to the timing of the first alteration switch cell S U1 and the second alteration switch cell S U2.
In this embodiment, the first alteration switch cell S U1 includes the first alteration switch M1 and the second alteration switch M2.Its
In, the first alteration switch M1 is coupled between the output end of the first operational amplifier OP1 and the first output end OUT1, and its gate
It is controlled by alteration switch control signal STB；Second alteration switch M2 is coupled to the output end and second of the first operational amplifier OP1
Between output end OUT2, and its gate is controlled by alteration switch control signal STB.
It should be noted that, it is assumed that the first alteration switch M1 and second in the first alteration switch cell S U1 of the invention is handed over
Switch M2 is changed to be controlled by when the alteration switch that maximum potential is boost voltage VBST controls signal STB and is connected with conducting resistance
RON, and the first alteration switch M1 and the second alteration switch M2 in the first alteration switch cell S U1 in the prior art are controlled by
Maximum potential is the control signal of operating voltage AVDD and has original conducting resistance RON0 when being connected, due to boost voltage VBST
Friendship in the prior art can be less than higher than operating voltage AVDD, conducting resistance RON when alteration switch of the invention being caused to be connected
Change original conducting resistance RON0 when switch conduction.
Assuming that the output current IO UT that the output end of the first operational amplifier OP1 of the invention is exported, which is flowed through, has conducting
Consumption power P can be generated when the first alteration switch cell S U1 of resistance RON, and output current IO UT in the prior art is flowed through
Original consumption power P 0 can be generated when the first alteration switch cell S U1 with original conducting resistance RON0.Exchange of the invention
The consumption power P of switch can be equal to output current IO UT square multiplied by conducting resistance RON, and alteration switch in the prior art
Original consumption power P 0 can be equal to output current IO UT square multiplied by original conducting resistance RON0.Due to conducting resistance RON
Less than original conducting resistance RON0, causes the consumption power P of alteration switch of the invention that can be less than exchange in the prior art and hold
The original consumption power P 0 closed, so that temperature rise T caused by the consumption power P of alteration switch of the invention can be low
The original temperature ascending amount T0 caused by the original consumption power P 0 of alteration switch in the prior art.
Similarly, the second alteration switch cell S U2 includes third alteration switch M3 and the 4th alteration switch M4.Wherein, third
Alteration switch M3 is coupled between the output end of second operational amplifier OP2 and the first output end OUT1, and its gate is controlled
Signal STB is controlled in alteration switch；4th alteration switch M4 is coupled to the output end of second operational amplifier OP2 and second defeated
Between outlet OUT2, and its gate is controlled by alteration switch control signal STB.
Assuming that the third alteration switch M3 and the 4th alteration switch M4 in the second alteration switch cell S U2 of the invention are controlled
Signal STB is controlled for the alteration switch of boost voltage VBST in maximum potential and there is conducting resistance RON when being connected, and existing skill
It is work that third alteration switch M3 in the second alteration switch cell S U2 and the 4th alteration switch M4 in art, which are controlled by maximum potential,
There is original conducting resistance RON0, since boost voltage VBST is higher than operating voltage when making the control signal of voltage AVDD and being connected
AVDD, when conducting resistance RON when alteration switch of the invention being caused to be connected can be less than alteration switch in the prior art conducting
Original conducting resistance RON0.
Assuming that the output current IO UT that the output end of second operational amplifier OP2 of the invention is exported, which is flowed through, has conducting
Consumption function can be generated when third alteration switch M3 and the 4th alteration switch M4 in the second alteration switch cell S U2 of resistance RON
Rate P, and when output current IO UT in the prior art flows through the alteration switch with original conducting resistance RON0 can generate it is original
Power P 0 is consumed, since conducting resistance RON is less than original conducting resistance RON0, causes the consumption power of alteration switch of the invention
P can be less than the original consumption power P 0 of alteration switch in the prior art, and the consumption power P institute of alteration switch of the invention
Caused by temperature rise T can be lower than caused by the original consumption power P 0 of alteration switch in the prior art on original temperature
Rising amount T0.
In practical application, booster circuit BVC can be charge pump (Charge pump) circuit or bootstrap mode circuit
(Bootstrap circuit), but not limited to this.
Referring to figure 2., Fig. 2 is the embodiment that booster circuit BVC is charge pump circuit.
As shown in Fig. 2, booster circuit (charge pump circuit) BVC may include that first switch SW1, second switch SW2, third are opened
Close SW3, the 4th switch SW4 and capacitor C1.First switch SW1 and second switch SW2 is serially connected with operating voltage AVDD and ground connection electricity
Between pressure GND and third switch SW3 and the 4th switch SW4 are serially connected with operating voltage AVDD and (boost voltage VBST subtracts work
The voltage difference of voltage AVDD) between.One end of capacitor C1 is coupled between first switch SW1 and second switch SW2 and capacitor C1
The other end be coupled between third switch SW3 and the 4th switch SW4.
It should be noted that first switch SW1 and the 4th switch SW4 are controlled by the first clock signal CLK1 and second switch
SW2 and third switch SW3 are controlled by the second clock signal CLK2.Wherein, the first clock signal CLK1 and the second clock signal
CLK2 is inverting each other.That is, when first switch SW1 is controlled by the first clock signal CLK1 with the 4th switch SW4 and opens
When, second switch SW2 can be controlled by the second clock signal CLK2 with third switch SW3 and close；As first switch SW1 and the 4th
When switch SW4 is controlled by the first clock signal CLK1 and closes, when second switch SW2 and third switch SW3 can be controlled by second
Arteries and veins signal CLK2 and open.
Referring to figure 3., Fig. 3 is the embodiment that booster circuit BVC is bootstrap mode circuit.
As shown in figure 3, booster circuit (bootstrap mode circuit) BVC may include that the first transistor switch M1, second transistor are opened
Close M2, first resistor R1, second resistance R2, diode D and capacitor C1.First switch SU1 and first resistor R1 are serially connected with work
Between voltage AVDD and ground voltage GND and second resistance R2 and second switch SU2 are serially connected with that (boost voltage VBST subtracts work
The voltage difference of voltage AVDD) and ground voltage GND between, one end of capacitor C1 is coupled to first switch SU1 and first resistor R1
Between and the other end of capacitor C1 be coupled to (voltage difference that boost voltage VBST subtracts operating voltage AVDD), first switch SU1
It is also coupled between second resistance R2 and second switch SU2, second switch SU2 is controlled by clock signal CLK.
Referring to figure 4., Fig. 4 is that alteration switch control signal STB1~STB3 with different maximum potential VG1~VG3 makes
There is the curve graph of different conducting resistance RON1~RON3 at alteration switch.As shown in Figure 4: identical alteration switch is drawn
For pole-source voltage VDS1, when the maximum potential of alteration switch control signal boosted to by lower VG1 originally it is higher
When VG3, alteration switch is controlled by conducting resistance possessed by the alteration switch of alteration switch control signal can be correspondingly by original
This higher RON1 is reduced to lower RON3.
A and Fig. 5 B referring to figure 5., Fig. 5 A are the comparison figure of the alteration switch control signal before and after pressurized treatment；Fig. 5 B is
The comparison figure that alteration switch control signal of the waveform of output signal before and after by pressurized treatment is influenced.
As shown in Fig. 5 A and Fig. 5 B, the maximum potential of the alteration switch control signal STB0 of non-intensified processing is work electricity
AVDD is pressed, and the alteration switch after pressurized treatment controls the maximum potential of signal STB as boost voltage VBST, and boost voltage
VBST is apparently higher than operating voltage AVDD.
In time T0, from Fig. 5 A: the alteration switch control signal STB0 of non-intensified processing can be by potential minimum
VMIN rises to operating voltage AVDD, and the alteration switch control signal STB after pressurized treatment then can be by potential minimum VMIN
Boost voltage VBST is risen to, that is, both switches to unlatching (ON) state from closing (OFF) state.From Fig. 5 B: by
The waveform for the output signal SOUT that alteration switch control signal STB after pressurized treatment influences can rise comparatively fast and in time T1
Reach ideal value, and then by the waveform of the alteration switch of the non-intensified processing control signal STB0 output signal SOUT0 influenced
Rise relatively slow and just reaches ideal value in time T2.
During time T0 to T3, the alteration switch of non-intensified processing controls signal STB0 and after pressurized treatment
Alteration switch control signal STB is maintained at unlatching (ON) state.
In time T3, from Fig. 5 A: the alteration switch control signal STB0 of non-intensified processing can be by operating voltage
AVDD drops to potential minimum VMIN and maintains to time T4, and the alteration switch control signal STB after pressurized treatment then can
Dropped to potential minimum VMIN by boost voltage VBST and maintained to time T4, that is, the two in time T3 from unlatching (ON) shape
State switches to closing (OFF) state and remains off (OFF) state to time T4.From Fig. 5 B: in the phase of time T3 to T4
Between, by the alteration switch control signal STB0 of the non-intensified processing primary output signal SOUT0 influenced and after by pressurized treatment
The waveform of output signal SOUT that influences of alteration switch control signal STB to be maintained at its ideal value constant.
In time T4, from Fig. 5 A: the alteration switch control signal STB0 of non-intensified processing can be by potential minimum
VMIN rises to operating voltage AVDD, and the alteration switch control signal STB after pressurized treatment then can be by potential minimum VMIN
Boost voltage VBST is risen to, that is, both switches to unlatching (ON) state from closing (OFF) state.From Fig. 5 B: by
The waveform for the output signal SOUT that alteration switch control signal STB after pressurized treatment influences can decline comparatively fast and in time T5
Reach ideal value, and by the wave of the alteration switch of the non-intensified processing control signal STB0 primary output signal SOUT0 influenced
Shape then declines relatively slow and just reaches ideal value in time T6.
During time T4 to T7, the alteration switch of non-intensified processing controls signal STB0 and after pressurized treatment
Alteration switch control signal STB is maintained at unlatching (ON) state.
In time T7, from Fig. 5 A: the alteration switch control signal STB0 of non-intensified processing can be by operating voltage
AVDD drops to potential minimum VMIN and maintains to time T4, and the alteration switch control signal STB after pressurized treatment then can
Dropped to potential minimum VMIN by boost voltage VBST and maintained to time T4, that is, the two in time T7 from unlatching (ON) shape
State switches to closing (OFF) state and remains off (OFF) state to time T8.From Fig. 5 B: in the phase of time T7 to T8
Between, by the alteration switch control signal STB0 of the non-intensified processing primary output signal SOUT0 influenced and by through pressurized treatment
It is constant that the waveform for the output signal SOUT that alteration switch control signal STB afterwards influences is maintained at ideal value.It can as remaining
Analogize according to aforementioned, is not repeated separately in this.
Fig. 6 is please referred to, Fig. 6 is the ratio that alteration switch controls influence of the signal pressurization front and back to the conducting resistance of alteration switch
Compared with figure.As shown in Figure 6, it is assumed that meeting when alteration switch is controlled by the control signal STB of the alteration switch after pressurized treatment and is connected
With conducting resistance RON, and meeting when alteration switch is controlled by the alteration switch control signal STB0 of non-intensified processing and is connected
With original conducting resistance RON0, due to the maximum potential (boost voltage of the alteration switch control signal STB after pressurized treatment
VBST) higher than the maximum potential (operating voltage AVDD) of the alteration switch control signal STB0 of non-intensified processing, so comparing
Conducting resistance RON curve in Fig. 6 should be clear from original conducting resistance RON0 curve: be controlled by after pressurized treatment
Conducting resistance RON when the alteration switch conducting of alteration switch control signal STB can be less than the friendship for being controlled by non-intensified processing
The original conducting resistance RON0 when alteration switch conducting of switch control signal STB0 is changed, therefore can reach reduces alteration switch conducting
When conducting resistance the effect of.
Further, since leading when being controlled by the alteration switch conducting of the control of the alteration switch after pressurized treatment signal STB
Original leading when the resistance RON that is powered is less than the alteration switch conducting for being controlled by the alteration switch control signal STB0 of non-intensified processing
Be powered resistance RON0, also make export electric current flow through be controlled by the alteration switch after pressurized treatment control signal STB exchange open
Consumption power when pass can be less than output electric current and flow through the friendship for being controlled by the alteration switch control signal STB0 of non-intensified processing
Consumption power when switch conduction is changed, and is effectively reduced the temperature of source electrode driver.For example, it can be sent out according to experimental data
Now arrive: the temperature of the source electrode driver after pressurized treatment can decline about compared with the temperature of the source electrode driver of non-intensified processing
As many as 3~4 degree Celsius, therefore can effectively avoid source electrode driver influences its efficiency since temperature is excessively high.
Known to based on the above embodiments: compared to the prior art, source electrode driver according to the present invention is to utilize boosting electricity
Road is improved the maximum potential of the alteration switch control signal in source electrode driver to a boost voltage by the operating voltage of script,
The conducting resistance of alteration switch is caused to become smaller therewith, in addition to consumption function of the alteration switch when exporting electric current and flowing through can be reduced
The revolution rate of the operational amplifier in each channel also can be improved to be effectively reduced except the temperature of source electrode driver in rate, therefore can be effective
Overcome the problems, such as that the prior art is suffered from.
By the above detailed description of preferred embodiments, it would be desirable to feature and spirit of the invention are more clearly described, and simultaneously
It is non-that scope of the invention is limited with above-mentioned disclosed preferred embodiment.On the contrary, the purpose is to wish to
Cover various changes and has being arranged in the scope of the scope of the patents to be applied of the invention of equality.
Claims (11)
1. a kind of source electrode driver, which is characterized in that the source electrode driver includes:
One first operational amplifier is controlled by a control signal, and the maximum potential of the control signal is an operating voltage；
One booster circuit controls signal to be a boost voltage for operating voltage boosting and generate an alteration switch accordingly,
Wherein the maximum potential of alteration switch control signal is the boost voltage, and the boost voltage is higher than the operating voltage；And
One first alteration switch unit couples first operational amplifier, when the first alteration switch unit is controlled by the exchange
Switch control signal and there is when being connected a conducting resistance；
It wherein, should if having an original conducting resistance when the first alteration switch unit is controlled by the control signal and is connected
Conducting resistance is less than the original conducting resistance.
2. source electrode driver as described in claim 1, which is characterized in that when the output that first operational amplifier is exported
Electric current can generate a consumption power when flowing through the first alteration switch unit with the conducting resistance, and the consumption power is less than
The output electric current flows through generated original consumption power when the first alteration switch unit with the original conducting resistance.
3. source electrode driver as claimed in claim 2, which is characterized in that a temperature rise caused by the consumption power is low
An original temperature ascending amount caused by the original consumption power.
4. source electrode driver as described in claim 1, which is characterized in that the source electrode driver further includes:
One second operational amplifier is controlled by the operating voltage；And
One second alteration switch unit, couples the second operational amplifier, when the second alteration switch unit is controlled by the exchange
Switch control signal and there is when being connected the conducting resistance, and the conducting resistance is less than the original conducting resistance.
5. source electrode driver as claimed in claim 4, which is characterized in that when the output that the second operational amplifier is exported
Electric current can generate a consumption power when flowing through the second alteration switch unit with the conducting resistance, and the consumption power is less than
The output electric current flows through generated original consumption power when the second alteration switch unit with the original conducting resistance.
6. source electrode driver as claimed in claim 5, which is characterized in that a temperature rise caused by the consumption power is low
An original temperature ascending amount caused by the original consumption power.
7. source electrode driver as described in claim 1, which is characterized in that the source electrode driver further includes:
One sequential control circuit is coupled between the booster circuit and the first alteration switch unit, is controlled by the boost voltage.
8. source electrode driver as described in claim 1, which is characterized in that the booster circuit is a charge pump circuit.
9. source electrode driver as claimed in claim 8, which is characterized in that the charge pump circuit includes a first switch, one the
Two switches, third switch, one the 4th switch and a capacitor, the first switch and the second switch be serially connected with the operating voltage with
Between one ground voltage and third switch is serially connected with the operating voltage with the 4th switch and the boost voltage subtracts the work
Between the voltage difference of voltage, one end of the capacitor is coupled between the first switch and the second switch and the other end of the capacitor
Be coupled to the third switch the 4th switch between, the first switch with the 4th switch be controlled by one first clock signal and
The second switch and third switch are controlled by one second clock signal, and first clock signal and second clock signal are each other
Reverse phase.
10. source electrode driver as described in claim 1, which is characterized in that the booster circuit is a bootstrap mode circuit.
11. source electrode driver as claimed in claim 10, which is characterized in that the bootstrap mode circuit includes a first switch, one
Second switch, a first resistor, a second resistance, a diode and a capacitor, the first switch are serially connected with the first resistor
Between the operating voltage and a ground voltage and the second resistance and the second switch are serially connected with the boost voltage and subtract the work
Between the voltage difference of voltage and the ground voltage, one end of the capacitor is coupled between the first switch and the first resistor and should
The other end of capacitor is coupled to the voltage difference that the boost voltage subtracts the operating voltage, the diode be coupled to the operating voltage with
Between the boost voltage, which is also coupled between the second resistance and the second switch, which is controlled by
One clock signal.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107103296A TWI646516B (en) | 2018-01-30 | 2018-01-30 | Source driver |
| TW107103296 | 2018-01-30 |
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| CN110097858A true CN110097858A (en) | 2019-08-06 |
| CN110097858B CN110097858B (en) | 2021-06-08 |
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| CN201810156962.4A Active CN110097858B (en) | 2018-01-30 | 2018-02-24 | Source driver |
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| CN (1) | CN110097858B (en) |
| TW (1) | TWI646516B (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI646516B (en) | 2019-01-01 |
| CN110097858B (en) | 2021-06-08 |
| TW201933312A (en) | 2019-08-16 |
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