CN110085680A - 表面贴装式tvs器件 - Google Patents
表面贴装式tvs器件 Download PDFInfo
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- 239000003063 flame retardant Substances 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000004593 Epoxy Substances 0.000 claims abstract description 18
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000012212 insulator Substances 0.000 claims abstract description 13
- 239000003822 epoxy resin Substances 0.000 claims abstract description 11
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 11
- JIXDOBAQOWOUPA-UHFFFAOYSA-N 1-fluoro-2-methoxybenzene Chemical compound COC1=CC=CC=C1F JIXDOBAQOWOUPA-UHFFFAOYSA-N 0.000 claims abstract description 7
- GOJUJUVQIVIZAV-UHFFFAOYSA-N 2-amino-4,6-dichloropyrimidine-5-carbaldehyde Chemical group NC1=NC(Cl)=C(C=O)C(Cl)=N1 GOJUJUVQIVIZAV-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229920000459 Nitrile rubber Polymers 0.000 claims abstract description 7
- 238000009413 insulation Methods 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 7
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims abstract description 6
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims abstract description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 6
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- 239000005011 phenolic resin Substances 0.000 claims abstract description 6
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- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 claims description 6
- YUWBVKYVJWNVLE-UHFFFAOYSA-N [N].[P] Chemical class [N].[P] YUWBVKYVJWNVLE-UHFFFAOYSA-N 0.000 claims description 6
- 229920002545 silicone oil Polymers 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 229920001558 organosilicon polymer Polymers 0.000 claims description 4
- 150000003376 silicon Chemical class 0.000 claims description 3
- NFVPEIKDMMISQO-UHFFFAOYSA-N 4-[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC=C(O)C=C1 NFVPEIKDMMISQO-UHFFFAOYSA-N 0.000 claims description 2
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 238000005219 brazing Methods 0.000 claims 1
- ZHPNWZCWUUJAJC-UHFFFAOYSA-N fluorosilicon Chemical compound [Si]F ZHPNWZCWUUJAJC-UHFFFAOYSA-N 0.000 claims 1
- 239000003921 oil Substances 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 10
- 238000005538 encapsulation Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
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- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49537—Plurality of lead frames mounted in one device
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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Abstract
本发明公开了一种表面贴装式TVS器件,包括上引线框、下引线框和芯片,所述上引线框、下引线框各自的焊接部与芯片位于环氧绝缘体内,位于所述上引线框一端的焊接部具有一凹槽,此上引线框、下引线框各自焊接部分别与芯片的第一金属层、第二金属层之间通过焊片电连接,其环氧绝缘体的原料包括以下重量份组分:环氧树脂80~100份、苯酚树脂40~60份、硅微粉75~90份、阻燃剂5~15份、γ‑氨丙基三乙氧基硅烷2~6份,纳米二氧化硅颗粒0.3~2份、杂氮二环0.1~1.5份、羧基丁腈橡胶2~8份,2‑氨基‑4‑氟‑1‑甲氧苯0.3~2份、三‑(二甲胺基甲基)苯酚0.2~1.5份和脱模剂3~8份。该表面贴装式TVS器件在封装时,可以大大减少冲丝、分层、气孔等不良现象,还增强了环氧整体力学性能,有效保证了封装结构稳定性。
Description
技术领域
本发明属于TVS器件技术领域,尤其涉及一种表面贴装式TVS器件。
背景技术
表面贴装式TVS器件是一种用于电路保护的二极管,英文缩写为TVS,所以也称为TVS二极管。工作时,TVS二极管与被保护器件在电路中并联,当电路中有峰值电压经过时,TVS二极管被反向击穿导通,使后续器件不受高压冲击,从而达到保护的目的。
TVS二极管的封装是影响其性能的重要因素,而环氧树脂因为其良好的物理机械性能和电气性能,以及低成本、良好的可靠性等优点而占封装材料的95%以上,黏度一直是影响环氧树脂组合物封装性能的一个重要因素,在塑封的过程中,塑封料对金丝冲击力的大小,直接影响到二极管的性能,黏度较大时会造成金丝变形而引起短路,从而降低了成品率。
发明内容
本发明目的在于提供一种表面贴装式TVS器件,该表面贴装式TVS器件在封装时,可以大大减少冲丝、分层、气孔等不良现象,还增强了环氧的整体力学性能,有效保证了封装结构稳定性。
为达到上述目的,本发明采用的技术方案是:一种表面贴装式TVS器件,包括上引线框、下引线框和芯片,所述上引线框、下引线框各自的焊接部与芯片位于环氧绝缘体内,位于所述上引线框一端的焊接部具有一凹槽,此上引线框、下引线框各自焊接部分别与芯片的第一金属层、第二金属层之间通过焊片电连接,所述焊片嵌入上引线框的凹槽且焊片的厚度大于凹槽的深度,位于上引线框另一端为折弯区,此折弯区的末端为引脚部,所述上引线框的引脚部与下引线框下部位于同一水平面上;
所述芯片进一步包括硅基片,此硅基片包括垂直方向相邻的N型掺杂区、P型掺杂区,所述P型掺杂区四周具有一沟槽,所述沟槽的表面覆盖有绝缘钝化保护层,此绝缘钝化保护层由沟槽底部延伸至P型掺杂区表面的边缘区域,所述P型掺杂区的上表面覆盖作为电极的第一金属层,所述N型掺杂区下表面覆盖作为另一个电极的第二金属层;
所述N型掺杂区进一步包括垂直方向相邻的轻掺杂N型层、重掺杂N型层,所述P型掺杂区进一步包括垂直方向相邻的轻掺杂P型层、重掺杂P型层,所述轻掺杂N型层与轻掺杂P型层接触,所述重掺杂P型层、重掺杂N型层分别位于硅基片上表面和下表面,所述重掺杂N型层中心处具有一中掺杂P型子区,此中掺杂P型子区位于重掺杂N型层内,所述中掺杂P型子区和位于中掺杂P型子区周边的重掺杂N型层均与第二金属层电连接;
所述环氧绝缘体的原料包括以下重量份组分:
环氧树脂 80~100份,
苯酚树脂 40~60份,
硅微粉 75~90份,
纳米二氧化硅颗粒 0.3~2份,
杂氮二环 0.1~1.5份,
羧基丁腈橡胶 2~8份,
2-氨基-4-氟-1-甲氧苯 0.3~2份,
三-(二甲胺基甲基)苯酚 0.2~1.5份,
γ-氨丙基三乙氧基硅烷 2~6份,
脱模剂 3~8份,
阻燃剂 5~15份。
上述技术方案中进一步改进的技术方案如下:
1. 上述方案中,所述重掺杂P型层的宽度与重掺杂N型层的宽度比为10~25:100。
2. 上述方案中,所述重掺杂P型层厚度与重掺杂N型层厚度的厚度比为10:12~20。
3. 上述方案中,所述焊片的厚度与凹槽的深度的比值为10:(3~6)。
4. 上述方案中,所述上引线框的焊接部与折弯区的夹角为85°~95°。
5. 上述方案中,所述阻燃剂为磷氮系列阻燃剂、结晶水盐类阻燃剂或它们的混合物。
6. 上述方案中,所述硅微粉为熔融硅微粉。
7. 上述方案中,所述脱模剂为硅油、含氟硅油、有机硅聚合物或异辛酸酯中的至少一种。
由于上述技术方案的运用,本发明与现有技术相比具有下列优点:
1、本发明表面贴装式TVS器件,其N型掺杂区进一步包括垂直方向相邻的轻掺杂N型层、重掺杂N型层,所述P型掺杂区进一步包括垂直方向相邻的轻掺杂P型层、重掺杂P型层,所述轻掺杂N型层与轻掺杂P型层接触,所述重掺杂P型层、重掺杂N型层分别位于硅基片上表面和下表面,所述重掺杂N型层中心处具有一中掺杂P型子区,此中掺杂P型子区位于重掺杂N型层内,所述中掺杂P型子区和位于中掺杂P型子区周边的重掺杂N型层均与第二金属层电连接,在正常工作范围内,具有更低的钳位电压,增强了器件的抗浪涌能力,正向通流能力可以更好满足保护需求;其次,其第一引线、第二引线各自的端部具有一凹槽,此第一引线、第二引线各自端部分别与芯片的第一金属层、第二金属层之间通过焊片电连接,焊片嵌入引线端部的凹槽且焊片的厚度大于凹槽的深度,焊片焊接时融化更均匀,避免芯片跑偏,以及防止挂桥引起的短路,提高了器件的可靠性。
2、本发明表面贴装式TVS器件,其环氧绝缘体配方采用环氧树脂80~100份、苯酚树脂40~60份和硅微粉75~90份,并添加纳米二氧化硅颗粒0.3~2份和杂氮二环0.1~1.5份,平衡了树脂与无机填料间的相互作用力,在降低黏度的同时,改善了组合物的流动性,且不损坏组合物的固化特性,保证组合物与被封装材料的结合力,在对器件进行封装时,可以大大减少冲丝、分层、气孔等不良现象,提高器件的封装成品率,满足超大规模、超高速、高密度、大功率、高精度、多功能集成封装的需求,降低封装成本;另外,其在环氧树脂体系中加入了羧基丁腈橡胶2~8份,并额外添加了2-氨基-4-氟-1-甲氧苯0.3~2份,提高了组合物的交联密度,还表现出优异的脱模性和连续成型性,从而增强了环氧的整体力学性能,有效保证了封装结构稳定性。
附图说明
附图1为本发明表面贴装式TVS器件中芯片结构示意图;
附图2为本发明表面贴装式TVS器件结构示意图。
以上附图中:1、硅基片;2、N型掺杂区;3、P型掺杂区;4、沟槽;5、绝缘钝化保护层;6、第一金属层;7、第二金属层;8、轻掺杂N型层;9、重掺杂N型层;10、轻掺杂P型层;11、重掺杂P型层;12、中掺杂P型子区;13、上引线框;131、折弯区;132、引脚部;14、下引线框;15、芯片;16、凹槽;17、焊片;18、环氧绝缘体。
具体实施方式
下面结合实施例对本发明作进一步描述:
实施例1~4:一种表面贴装式TVS器件,包括上引线框13、下引线框14和芯片15,所述上引线框13、下引线框14各自的焊接部与芯片位于环氧绝缘体18内,位于所述上引线框13一端的焊接部具有一凹槽16,此上引线框13、下引线框14各自焊接部分别与芯片15的第一金属层6、第二金属层7之间通过焊片17电连接,所述焊片17嵌入上引线框13的凹槽16且焊片17的厚度大于凹槽16的深度,位于上引线框13另一端为折弯区131,此折弯区131的末端为引脚部132,所述上引线框13的引脚部132与下引线框14下部位于同一水平面上;
所述芯片15进一步包括硅基片1,此硅基片1包括垂直方向相邻的N型掺杂区2、P型掺杂区3,所述P型掺杂区3四周具有一沟槽4,所述沟槽4的表面覆盖有绝缘钝化保护层5,此绝缘钝化保护层5由沟槽4底部延伸至P型掺杂区3表面的边缘区域,所述P型掺杂区3的上表面覆盖作为电极的第一金属层6,所述N型掺杂区2下表面覆盖作为另一个电极的第二金属层7;
所述N型掺杂区2进一步包括垂直方向相邻的轻掺杂N型层8、重掺杂N型层9,所述P型掺杂区3进一步包括垂直方向相邻的轻掺杂P型层10、重掺杂P型层11,所述轻掺杂N型层8与轻掺杂P型层10接触,所述重掺杂P型层11、重掺杂N型层9分别位于硅基片1上表面和下表面,所述重掺杂N型层9中心处具有一中掺杂P型子区12,此中掺杂P型子区12位于重掺杂N型层9内,所述中掺杂P型子区12和位于中掺杂P型子区12周边的重掺杂N型层9均与第二金属层13电连接。
上述重掺杂P型层11的宽度与重掺杂N型层9的宽度比为20:100;
上述重掺杂P型层11厚度与重掺杂N型层9厚度的厚度比为10:15;
上述焊片17的厚度与凹槽16的深度的比值为10:4;
上述上引线框的焊接部与折弯区的夹角为85°;
上述环氧绝缘体18的原料包括以下重量份组分:
表1
组分 | 实施例1 | 实施例2 | 实施例3 | 实施例4 |
环氧树脂 | 88 | 80 | 95 | 98 |
苯酚树脂 | 45 | 50 | 60 | 55 |
硅微粉 | 85 | 75 | 90 | 80 |
纳米二氧化硅颗粒 | 0.6 | 0.3 | 1.5 | 1.7 |
杂氮二环 | 0.2 | 1.3 | 1 | 0.5 |
羧基丁腈橡胶 | 3 | 7 | 6 | 8 |
2-氨基-4-氟-1-甲氧苯 | 0.3 | 1.8 | 1.5 | 2 |
三-(二甲胺基甲基)苯酚 | 0.2 | 0.7 | 1.1 | 1.5 |
γ-氨丙基三乙氧基硅烷 | 5 | 3 | 4 | 6 |
脱模剂 | 5 | 2 | 3 | 6 |
阻燃剂 | 10 | 5 | 15 | 18 |
上述硅微粉为熔融硅微粉。
实施例1中的脱模剂为硅油,阻燃剂为磷氮系列阻燃剂;实施例2中的脱模剂为有机硅聚合物,阻燃剂为结晶水盐类阻燃剂;实施例3中的脱模剂为含氟硅油,阻燃剂为结晶水盐类阻燃剂;实施例4中的脱模剂为异辛酸酯,阻燃剂为磷氮系列阻燃剂和结晶水盐类阻燃剂的混合物。
上述环氧绝缘体18的原料制备方法包括以下步骤:
S1. 将环氧树脂80~100份和苯酚树脂40~60份,在反应釜中以70-110摄氏度进行热融混合,并搅拌均匀,再经冷却后粉碎成粉末;
S2. 将硅微粉75~90份、阻燃剂5~15份与γ-氨丙基三乙氧基硅烷2~6份在高速搅拌机中混合均匀,进行表面处理;
S3. 在以上两步获得的混合物中加入纳米二氧化硅颗粒0.3~2份、杂氮二环0.1~1.5份、羧基丁腈橡胶2~8份, 2-氨基-4-氟-1-甲氧苯0.3~2份、三-(二甲胺基甲基)苯酚0.2~1.5份和脱模剂3~8份,混合均匀;
S4. 通过双螺杆挤出机对步骤三种获得的混合物进行熔融混炼,再经过压片、冷却、粉碎、成型制成环氧树脂组合物的成型材料。
对比例1~3:一种环氧绝缘体,原料包括以下重量份组分:
表2
组分 | 对比例1 | 对比例2 | 对比例3 |
环氧树脂 | 82 | 95 | 93 |
苯酚树脂 | 55 | 60 | 50 |
硅微粉 | 75 | 90 | 80 |
纳米二氧化硅颗粒 | - | 1.5 | 0.7 |
杂氮二环 | - | 0.8 | - |
羧基丁腈橡胶 | 5 | - | 8 |
2-氨基-4-氟-1-甲氧苯 | 1.5 | - | - |
三-(二甲胺基甲基)苯酚 | 0.8 | 1.2 | 1.5 |
γ-氨丙基三乙氧基硅烷 | 3 | 5 | 6 |
脱模剂 | 4 | 3 | 6 |
阻燃剂 | 5 | 12 | 15 |
上述硅微粉为熔融硅微粉。
对比例1中的脱模剂为有机硅聚合物,阻燃剂为结晶水盐类阻燃剂;对比例2中的脱模剂为硅油,阻燃剂为磷氮系列阻燃剂;对比例3中的脱模剂为异辛酸酯,阻燃剂为磷氮系列阻燃剂和结晶水盐类阻燃剂的混合物。
制备工艺方法同实施例。
上述实施例1~4和对比例1~3制得的环氧绝缘体的性能如表3所示:
表3
其中,螺旋流动长度测试方法为:称取样品,在流动模具温度为(175±2℃)、注塑压力为3.5Mpa(35Kg/cm2)、合模压力为21Mpa(210Kg/cm2)、注塑速度为6cm/sec的条件下,在模具中成型、固化2~3分钟测得。
如表3的评价结果所示,各实施例中的环氧绝缘体无论是整体力学性能还是流动性均优于各对比例,且各实施例中的环氧绝缘体的黏度低于各对比例,用于瞬态电压抑制器中能够保证封装结构稳定性,大大减少冲丝、分层、气孔等不良现象,降低封装后内部气孔的发生率,提高封装成品率。
上述实施例只为说明本发明的技术构思及特点,其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施,并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰,都应涵盖在本发明的保护范围之内。
Claims (8)
1.一种表面贴装式TVS器件,其特征在于:包括上引线框(13)、下引线框(14)和芯片(15),所述上引线框(13)、下引线框(14)各自的焊接部与芯片位于环氧绝缘体(18)内,位于所述上引线框(13)一端的焊接部具有一凹槽(16),此上引线框(13)、下引线框(14)各自焊接部分别与芯片(15)的第一金属层(6)、第二金属层(7)之间通过焊片(17)电连接,所述焊片(17)嵌入上引线框(13)的凹槽(16)且焊片(17)的厚度大于凹槽(16)的深度,位于上引线框(13)另一端为折弯区(131),此折弯区(131)的末端为引脚部(132),所述上引线框(13)的引脚部(132)与下引线框(14)下部位于同一水平面上;
所述芯片(15)进一步包括硅基片(1),此硅基片(1)包括垂直方向相邻的N型掺杂区(2)、P型掺杂区(3),所述P型掺杂区(3)四周具有一沟槽(4),所述沟槽(4)的表面覆盖有绝缘钝化保护层(5),此绝缘钝化保护层(5)由沟槽(4)底部延伸至P型掺杂区(3)表面的边缘区域,所述P型掺杂区(3)的上表面覆盖作为电极的第一金属层(6),所述N型掺杂区(2)下表面覆盖作为另一个电极的第二金属层(7);
所述N型掺杂区(2)进一步包括垂直方向相邻的轻掺杂N型层(8)、重掺杂N型层(9),所述P型掺杂区(3)进一步包括垂直方向相邻的轻掺杂P型层(10)、重掺杂P型层(11),所述轻掺杂N型层(8)与轻掺杂P型层(10)接触,所述重掺杂P型层(11)、重掺杂N型层(9)分别位于硅基片(1)上表面和下表面,所述重掺杂N型层(9)中心处具有一中掺杂P型子区(12),此中掺杂P型子区(12)位于重掺杂N型层(9)内,所述中掺杂P型子区(12)和位于中掺杂P型子区(12)周边的重掺杂N型层(9)均与所述第二金属层(7)电连接;
所述环氧绝缘体(18)的原料包括以下重量份组分:
环氧树脂 80~100份,
苯酚树脂 40~60份,
硅微粉 75~90份,
纳米二氧化硅颗粒 0.3~2份,
杂氮二环 0.1~1.5份,
羧基丁腈橡胶 2~8份,
2-氨基-4-氟-1-甲氧苯 0.3~2份,
三-(二甲胺基甲基)苯酚 0.2~1.5份,
γ-氨丙基三乙氧基硅烷 2~6份,
脱模剂 3~8份,
阻燃剂 5~15份。
2.根据权利要求1所述的表面贴装式TVS器件,其特征在于:所述重掺杂P型层(11)的宽度与重掺杂N型层(9)的宽度比为10~25:100。
3.根据权利要求1所述的表面贴装式TVS器件,其特征在于:所述重掺杂P型层(11)厚度与重掺杂N型层(9)厚度的厚度比为10:12~20。
4.根据权利要求1所述的表面贴装式TVS器件,其特征在于:所述焊片(17)的厚度与凹槽(16)的深度的比值为10:(3~6)。
5.根据权利要求1所述的表面贴装式TVS器件,其特征在于:所述上引线框(13)的焊接部与折弯区(131)的夹角为85°~95°。
6.根据权利要求1所述的表面贴装式TVS器件,其特征在于:所述阻燃剂为磷氮系列阻燃剂、结晶水盐类阻燃剂或它们的混合物。
7.根据权利要求1所述的表面贴装式TVS器件,其特征在于:所述硅微粉为熔融硅微粉。
8.根据权利要求1所述的表面贴装式TVS器件,其特征在于:所述脱模剂为硅油、含氟硅油、有机硅聚合物或异辛酸酯中的至少一种。
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