CN110085650A - Display panel - Google Patents

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Publication number
CN110085650A
CN110085650A CN201910439519.2A CN201910439519A CN110085650A CN 110085650 A CN110085650 A CN 110085650A CN 201910439519 A CN201910439519 A CN 201910439519A CN 110085650 A CN110085650 A CN 110085650A
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CN
China
Prior art keywords
layer
pixel
area
sub
display panel
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Granted
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CN201910439519.2A
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Chinese (zh)
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CN110085650B (en
Inventor
郑敏
欧阳齐
周阳
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to CN201910439519.2A priority Critical patent/CN110085650B/en
Publication of CN110085650A publication Critical patent/CN110085650A/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/86Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/38Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The present invention provides a kind of display panel, including array substrate, wherein having viewing area, has sub-pixel area and the non-pixel areas between the sub-pixel area in the viewing area;Fluting is set in the array substrate and corresponds to the non-pixel areas;Thin-film encapsulation layer is set in the array substrate;Colored filter is overlying in the thin-film encapsulation layer;Protective layer is overlying on the colored filter far from the thin-film encapsulation layer side;Wherein, the protective layer has a through-hole, and for the through-hole through the protective layer and the colored filter until the thin-film encapsulation layer is far from array substrate side, the through-hole corresponds to the fluting.Polaroid is replaced with the structure of color membrane substrates, black matrix" and protective layer by the present invention.And punched in the part of color membrane substrates, the corresponding imaging area of protective layer, the transparent material of high transparency is filled, penetrates luminous energy preferably, the camera module being transmitted under slot area is final to improve camera shooting performance.

Description

Display panel
Technical field
The present invention relates to technical field of liquid crystal display more particularly to a kind of display panels.
Background technique
Due to the appearance of screen concept, the requirement of corresponding high standard also with technology development and generate.The present invention is just It is to release one kind on the basis of screen and be easy to fold, ultra-thin folding screen design.And it combines and occurs on the market at this stage Imaging region appearance concept, further optimized, while thinned screen is easy to bend, improve light transmittance, make to image The performance of machine mould group is preferably played.
Since existing cell phone is to frivolous, deformable, the trend development shielded comprehensively, and to accomplish to shield comprehensively, In a method seek to hide video camera mould group in the panel, and in order to guarantee that video camera mould group can receive more Light has very high requirement it is necessary to the light transmittance of opposite board stacking.Since video camera mould group is in Kapton (Polyimide Film) the lower section of layer, and PI material is transparent organic material, usually bilayer PI structure is appropriate by PI thickness as substrate After will not only other layers be impacted by being thinned, and meeting is because thickness is thinning, light transmittance can be promoted.
As shown in Figure 1, the structure of OLED display screen at this stage, the light extraction efficiency of light is improved by polaroid (POL). But the thickness of polaroid is generally 80-120 μm, and the display panel thickness produced in this way is thicker, is unfavorable for bending.
Summary of the invention
It is an object of the present invention to which the present invention provides a kind of display panel, plate thickness thickness can be efficiently solved, go out light The problems such as rate is poor, unfavorable video camera module performance plays.
In order to solve the above technical problems, the present invention provides a kind of display panel, including array substrate, wherein having display Area, the viewing area include sub-pixel area and the non-pixel areas between the sub-pixel area;Fluting is set to the non-picture Plain area;Thin-film encapsulation layer is set in the array substrate;Colored filter is set in the thin-film encapsulation layer;Protective layer covers In the colored filter far from the thin-film encapsulation layer side;Wherein, the colored filter is equipped with a through-hole, the through-hole The corresponding fluting.
Further, transparent material is filled in the through-hole.
Further, the fluting has a slot bottom and the peripheral wall set on the slot bottom two sides;The corresponding non-pixel Area, the thin-film encapsulation layer include: the first inorganic layer, are set to the slot bottom and peripheral wall;First organic layer is set to described first On inorganic layer and fill the fluting.
Further, the array substrate further includes tft layer and pixel confining layer;Groove is set to the picture In plain confining layers and correspond to the sub-pixel area.
Further, the corresponding sub-pixel area, the thin-film encapsulation layer includes: the second inorganic layer, is formed in the battle array On column substrate;Second organic layer is formed on second inorganic layer;Wherein, first inorganic layer and described second inorganic Layer is formed together;First organic layer is formed together with second organic layer.
Further, the thin-film encapsulation layer further includes the third being arranged on first inorganic layer and the second inorganic layer Inorganic layer.
Further, the sub-pixel area includes the first sub-pixel, the second sub-pixel and third sub-pixel, the colored filter Mating plate includes the first color diaphragm being correspondingly arranged in first pixel, be correspondingly arranged on second sub-pixel second Color diaphragm, the third coloured silk diaphragm being correspondingly arranged on the third sub-pixel and setting are in the described first color diaphragm, the second color film Reflecting layer between piece and third coloured silk diaphragm, the through-hole are arranged on the reflecting layer.
Further, the array substrate further include: substrate, the tft layer is set on the substrate, described The secondth area that substrate has the firstth area and is connected with firstth area, firstth area correspond to the fluting, firstth area Thickness be less than secondth area thickness.
Further, the array substrate further include: planarization layer is overlying on the surface of the tft layer;It is described Pixel confining layer is overlying on side of the planarization layer far from the tft layer.
Further, the fluting is through the pixel confining layer and the planarization layer until the thin film transistor (TFT) The surface of layer.
The beneficial effects of the present invention are: the present invention proposes a kind of display panel, by radium-shine cutting so that substrate attenuation, most The width for making substrate attenuation area eventually, matches the width of fluting, and improves light transmittance, and by display panel polarisation panel region Replace with the structure of color membrane substrates, black matrix" and protective layer, and in the punching of the corresponding non-subpixel area of color membrane substrates, And the cohesive material of high transparency is filled, penetrate luminous energy preferably, the camera module being transmitted under slot area is final to improve Image performance.And the structural thickness of color membrane substrates, black matrix" and protective layer is less than the thickness of polaroid, and this can enable whole A panel is thinning, can be easier to bend.
Detailed description of the invention
The invention will be further described with reference to the accompanying drawings and examples.
Fig. 1 is the structural schematic diagram of existing display panel;
Fig. 2 is display panel structure schematic diagram provided by the invention;
Main appended drawing reference
Display panel 20
Array substrate 200;Viewing area 201;Sub-pixel area 202;
Non-pixel areas 203;Firstth area, 204 second area 205
Tft layer 206;Thin-film encapsulation layer 207;Substrate 21;
Buffer layer 22;First grid insulating layer 23;Second grid insulating layer 24;
Interlayer insulating film 25;Planarization layer 26;Pixel confining layer 27;
First electrode 28;Second inorganic layer 29;Barricade 210;
Third inorganic layer 211;Second organic layer 212;Colored filter 213;
Protective layer 214;Glass 215;Semiconductor layer 216;
First grid metal layer 217;Second grid metal layer 218;Source-drain electrode metal routing 219;
Source metal cabling 219a;Drain metal routing 219b;Optical adhesive layer 2110;
Groove 2111;Through-hole 2112;Fluting 2113;
First organic layer 2121;First inorganic layer 291.
Specific embodiment
The explanation for being below each embodiment is can to use wet specific reality to illustrate the present invention with reference to additional schema Apply example.The direction term that the present invention is previously mentioned, for example, above and below, front, rear, left and right, inside and outside, side etc., be only with reference to accompanying drawings Direction.The element title that the present invention mentions, such as first, second etc., it is only to discriminate between different components, it can better table It reaches.The similar unit of structure is given the same reference numerals in the figure.
Herein with reference to the accompanying drawings to detailed description of the present invention embodiment.The present invention can show as many different forms, The present invention should not be only interpreted as specific embodiment set forth herein.It is to explain the present invention that the present invention, which provides these embodiments, Practical application, to make others skilled in the art it will be appreciated that various embodiments of the present invention and being suitable for specific expection The various modifications scheme of application.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected;It can To be mechanical connection, it is also possible to be electrically connected;It can be directly connected, can also can be indirectly connected through an intermediary Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition Concrete meaning in invention.
As shown in Fig. 2, in one embodiment, display panel 20 of the invention, including array substrate 200, thin-film encapsulation layer 207, colored filter 213, protective layer 214 and glass 215.
Wherein the array substrate 200 has viewing area 201, includes sub-pixel area 202 and position in the viewing area 201 Non-pixel areas 203 between the sub-pixel area 202.
As shown in Fig. 2, the array substrate 200 include substrate 21, tft layer 206, source-drain electrode metal layer 219, Planarization layer 26, pixel confining layer 27, first electrode 28, luminescent layer 29.
The array substrate 200 be set to the substrate 21 on, the substrate 21 have the first area 204 and with firstth area 204 the second connected areas 205, firstth area 204 correspond to the fluting 2113, and the thickness in firstth area 204 is less than institute The thickness in the second area 205 is stated, the substrate 21 is policapram (PI).
Second area 205 of the substrate 21 can make 205 thickness of the secondth area be less than described first by radium-shine cutting The thickness in area 204, and width and 2113 identical raising light transmittances of the fluting, enable to shield lower camera module and receive more Light improves the quality that camera shooting is taken pictures.
The tft layer 206 includes multiple thin film transistor (TFT)s, and the thin film transistor (TFT) is low temperature polycrystalline silicon skill Art thin film transistor (TFT), oxide thin film transistor or common thin film transistor (TFT).
The present invention is preferably low temperature polycrystalline silicon technique film transistor, because it is fast, highlighted with high-resolution, reaction speed The advantages that degree, high aperture, in addition since the silicon crystalline arrangement of the LCD of low temperature polycrystalline silicon technique film transistor has time compared with a-Si Sequence, so that high 100 times or more relatively of electron mobility, peripheral drive circuit can be made on the glass substrate simultaneously, be reached The target of system combination saves space and drives the cost of IC.
The tft layer 206 includes semiconductor layer 216, first grid insulating layer 23, first grid metal layer 217, second grid insulating layer 24, second grid metal layer 218 and interlayer insulating film 25.The semiconductor layer 216 is overlying on described Side of the buffer layer 22 far from substrate;The first grid insulating layer 23 is overlying on the semiconductor layer 216 and the buffer layer 22 Surface;The first grid metal layer 217 is overlying on one layer of the first grid insulating layer 23 far from buffer layer 22;Described Two gate insulating layers 24 are overlying on the surface of the first grid metal layer 217 and the first grid insulating layer 23;Described second Gate metal layer 218 is overlying on the side of the second grid insulating layer 24 far from the second insulating layer;The interlayer insulating film 25 are overlying on the surface of the second grid metal layer 218 and the second grid insulating layer 24.
In sub-pixel area 202, the source-drain electrode metal routing 219 includes source electrode cabling 219a and drain cabling 219b.Institute It states source-drain electrode metal routing 219 and is overlying on the side of the interlayer insulating film 25 far from second grid insulating layer 24, the source electrode is walked Line 219a and the corresponding source area for being connected to the semiconductor layer 216 of the drain electrode cabling 219b and drain area;The source and drain The drain metal routing 219b of pole metal routing 219 is connected by the first electrode 28 with second inorganic layer 29.
The planarization layer 26 is overlying on the surface of the source-drain electrode metal layer 219 and the interlayer insulating film 25;The picture Plain confining layers 27 are overlying on side of the planarization layer 26 far from the interlayer insulating film 25.
The pixel confining layer 27 and correspond to the sub-pixel area 202 set a groove 2111;The corresponding sub-pixel area, Second inorganic layer 29 is formed in the groove 2111, in the pixel confining layer 27.
The corresponding non-pixel areas 203, the fluting 2113 has a slot bottom and the peripheral wall set on the slot bottom, described Thin-film encapsulation layer 207 includes the first inorganic layer 291 and the first organic layer 2121;First inorganic layer 291 is set to the slot Bottom and peripheral wall;First organic layer 2121 is set to first inorganic layer 291 and fills the fluting 2113.
First inorganic layer 291 is formed together with second inorganic layer 29;First organic layer 2121 with it is described Second organic layer 212 is formed together.
The thin-film encapsulation layer further includes third inorganic layer 211, and it is organic that the third inorganic layer 211 is formed in described first On layer 2121 and the second organic layer 212, the third inorganic layer 211 is set under the colored filter 213.
In non-pixel areas, light can be made to penetrate the transparent material of the through-hole 2112 in this way, and described open can be penetrated Second organic layer 212 of slot 2113, the camera module below the substrate allow receive light, increase its camera shooting effect Fruit.
In the array substrate 200 and correspond to the non-pixel areas 203 equipped with a fluting 2113;The fluting 2113 passes through The pixel confining layer 27 and the planarization layer 26 are through at up to the surface of the interlayer insulating film 25;The thin-film encapsulation layer 207 are set in the array substrate 200;The colored filter 213 is overlying on the thin-film encapsulation layer 207 far from the array base The side of plate 200;The protective layer 214 is overlying on the colored filter 213 far from 207 side of thin-film encapsulation layer;It is described Optical adhesive layer 2110 is overlying on side of the protective layer 214 far from the colored filter 213;The glass 215 is overlying on described Side of the optical adhesive layer 2110 far from the protective layer 214.
The polaroid of traditional panel is replaced with the structure of colored filter 213 and protective layer 214 by the present invention.And in CF The part punching filling transparent material of (color filter), the corresponding imaging area of protective layer 214 (region of former black matrix") Material can be easier to bend this can enable entire panel is thinning.
Wherein, the colored filter 213 has a through-hole 2112, and the through-hole 2112 runs through the colored filter 213 until the thin-film encapsulation layer 207 is far from 200 side of array substrate, and the through-hole 2112 corresponds to the fluting 2113.It is described Thin-film encapsulation layer 207 further includes barricade 210, and the thin-film encapsulation layer 207 plays the effect of isolation water oxygen, to the device of display panel Part plays the role of protection;The barricade 210 surrounds the viewing area 201, and is set to the array substrate 200 and the encapsulation Between layer 211, barricade plays the role of encirclement to organic material, and organic material cannot be allowed to be leaked to other pixel regions, influences to show Show that panel works normally.
In one embodiment, the sub-pixel area 202 includes the first sub-pixel, the second sub-pixel and third sub-pixel, institute Colored filter 213 is stated to include the first color diaphragm being correspondingly arranged in first pixel, be correspondingly arranged at second son The second color diaphragm in pixel, the third coloured silk diaphragm being correspondingly arranged on the third sub-pixel and setting are in the described first color film Reflecting layer between piece, the second color diaphragm and third coloured silk diaphragm, the through-hole 2112 are arranged on the reflecting layer.
Specifically in array substrate preparation process, completing substrate 21 arrives all process steps of pixel confining layer 27, and passes through Radium-shine borehole cuts out the distance between sub-pixel, and removal part is pixel confining layer 27 with after planarization layer 26, is doing Subsequent technique.
The present invention proposes a kind of display panel 20, by by polaroid replace with colored filter (color filter), The structure of BM (black matrix) and protective layer 214.And in CF (color filter), the corresponding imaging region of protective layer 214 The part in domain (region of former black matrix") is punched, and is filled the cohesive material of high transparency, is penetrated luminous energy preferably, and energy The camera module being enough broadcast under 2113 regions of fluting, it is final to improve camera shooting performance.
It should be pointed out that can also have the embodiment of a variety of transformation and remodeling for the present invention through absolutely proving, It is not limited to the specific embodiment of above embodiment.Above-described embodiment is as just explanation of the invention, rather than to hair Bright limitation.In short, protection scope of the present invention should include that those are obvious to those skilled in the art Transformation or substitution and remodeling.

Claims (10)

1. a kind of display panel, which is characterized in that including
Array substrate, wherein having viewing area, the viewing area includes sub-pixel area and between the sub-pixel area Non-pixel areas;
Fluting is set to the non-pixel areas;
Thin-film encapsulation layer is set in the array substrate;
Colored filter is set in the thin-film encapsulation layer;
Protective layer is overlying on the colored filter far from the thin-film encapsulation layer side;
Wherein, the colored filter is equipped with a through-hole, and the through-hole corresponds to the fluting.
2. display panel according to claim 1, which is characterized in that
Transparent material is filled in the through-hole.
3. display panel according to claim 1, which is characterized in that
The fluting has a slot bottom and the peripheral wall set on the slot bottom two sides;
The corresponding non-pixel areas, the thin-film encapsulation layer include:
First inorganic layer is set to the slot bottom and peripheral wall;
First organic layer on first inorganic layer and fills the fluting.
4. display panel according to claim 1, which is characterized in that the array substrate further include tft layer with And pixel confining layer;
Groove is set in the pixel confining layer and corresponds to the sub-pixel area.
5. display panel according to claim 3, which is characterized in that
The corresponding sub-pixel area, the thin-film encapsulation layer include
Second inorganic layer is formed in the array substrate;
Second organic layer is formed on second inorganic layer;
Wherein, first inorganic layer is formed together with second inorganic layer;First organic layer and described second organic Layer is formed together.
6. display panel according to claim 3, which is characterized in that the thin-film encapsulation layer further includes setting described the Third inorganic layer on one inorganic layer and the second inorganic layer.
7. display panel according to claim 1, which is characterized in that the sub-pixel area includes the first sub-pixel, second Sub-pixel and third sub-pixel, the colored filter includes the first color diaphragm being correspondingly arranged in first pixel, right The color diaphragm of should be arranged on second sub-pixel second, the third coloured silk diaphragm being correspondingly arranged on the third sub-pixel and Reflecting layer between described first color diaphragm, the second color diaphragm and third coloured silk diaphragm is set, and the through-hole setting is described anti- It penetrates on layer.
8. display panel according to claim 4, which is characterized in that the array substrate further include: substrate, the film Transistor layer is set on the substrate, the secondth area that the substrate has the firstth area and is connected with firstth area, and described first Area corresponds to the fluting, and the thickness in firstth area is less than the thickness in secondth area.
9. display panel according to claim 4, which is characterized in that the array substrate further include: planarization layer is overlying on The surface of the tft layer;
The pixel confining layer is overlying on side of the planarization layer far from the tft layer.
10. display panel according to claim 9, which is characterized in that
The fluting is through the pixel confining layer and the planarization layer until the surface of the tft layer.
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CN110783347A (en) * 2019-10-12 2020-02-11 武汉华星光电半导体显示技术有限公司 Display panel and preparation method thereof
CN111019130A (en) * 2019-12-03 2020-04-17 武汉华星光电半导体显示技术有限公司 Polyimide, preparation method of polyimide film and display device
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WO2021051729A1 (en) * 2019-09-17 2021-03-25 武汉华星光电半导体显示技术有限公司 Organic light-emitting diode display panel and organic light-emitting diode display apparatus
EP3800667A1 (en) * 2019-10-02 2021-04-07 Samsung Display Co., Ltd. Display device
CN112750846A (en) * 2021-01-04 2021-05-04 武汉华星光电半导体显示技术有限公司 OLED display panel and OLED display device
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CN113035901A (en) * 2019-12-25 2021-06-25 云谷(固安)科技有限公司 Light-transmitting display panel, preparation method thereof and display panel
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CN114823829A (en) * 2022-04-13 2022-07-29 武汉华星光电半导体显示技术有限公司 Display device
CN115020618A (en) * 2022-06-23 2022-09-06 武汉华星光电半导体显示技术有限公司 Transparent display panel
CN115020619A (en) * 2022-07-08 2022-09-06 武汉华星光电半导体显示技术有限公司 Display panel and mobile terminal
WO2023226865A1 (en) * 2022-05-23 2023-11-30 京东方科技集团股份有限公司 Transparent display panel and preparation method therefor, and display apparatus

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