CN110071223A - A kind of OLED encapsulating structure and OLED encapsulation method - Google Patents

A kind of OLED encapsulating structure and OLED encapsulation method Download PDF

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Publication number
CN110071223A
CN110071223A CN201910271992.4A CN201910271992A CN110071223A CN 110071223 A CN110071223 A CN 110071223A CN 201910271992 A CN201910271992 A CN 201910271992A CN 110071223 A CN110071223 A CN 110071223A
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CN
China
Prior art keywords
cover board
oled
array substrate
metal
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910271992.4A
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Chinese (zh)
Inventor
梁晓明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to CN201910271992.4A priority Critical patent/CN110071223A/en
Priority to PCT/CN2019/083600 priority patent/WO2020199268A1/en
Publication of CN110071223A publication Critical patent/CN110071223A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8423Metallic sealing arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8426Peripheral sealing arrangements, e.g. adhesives, sealants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8428Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses a kind of OLED encapsulating structure and OLED encapsulation methods.The OLED encapsulating structure includes: the array substrate being oppositely arranged and cover board;OLED device, frame glue and Metal Packaging layer between the array substrate and the cover board;The frame glue is centered around the surrounding of the OLED device, and the Metal Packaging layer is centered around the surrounding of the frame glue;Thin-film encapsulation layer in the OLED device to improve the ability of OLED device isolation water oxygen, and then extends the service life of OLED device.

Description

A kind of OLED encapsulating structure and OLED encapsulation method
Technical field
The present invention relates to technical field of display panel more particularly to a kind of OLED encapsulating structure and OLED encapsulation methods.
Background technique
Organic Light Emitting Diode OLED (Organic Light Emitting Diode) is since it has flexibility, when response Between it is fast, the features such as colour gamut is wide, and low energy consumption, obtains very big concern and development.OLED is by one between anode, cathode and electrode Layer or the organic material of multilayer are constituted, sharp by being compounded to form from anode, cathode injected holes and electronics in organic luminous layer Son, exciton radiation transistion shine.But metallic cathode and organic material are easy to be influenced by steam and oxygen in OLED, so that OLED efficiency decline and failure influence the service life of OLED, therefore OLED is very high to the isolation requirement of water oxygen.The encapsulation of OLED Effect is the performance and used life for largely affecting OLED.
The encapsulation of OLED at present mainly has cover board encapsulation and thin-film package.Cover board encapsulation technology is coated on packaged glass Ultra-violet curing frame glue (epoxy resin etc.) or the glass cement of radium-shine encapsulation make OLED have the effect of preferable isolation water oxygen.Film Encapsulation is then that alternating deposit multilayer is inorganic or organic film in OLED device, achievees the purpose that completely cut off water oxygen.But both The ability that packaged type completely cuts off water oxygen is still insufficient, and the service life of OLED device is caused not grown.
Summary of the invention
The embodiment of the present invention provides a kind of OLED encapsulating structure and OLED encapsulation method, to solve existing packaged type isolation The problem of water oxygen scarce capacity.
The embodiment of the invention provides a kind of OLED encapsulating structures, comprising:
The array substrate and cover board being oppositely arranged;
OLED device, frame glue and Metal Packaging layer between the array substrate and the cover board;The frame glue is enclosed It is wound on the surrounding of the OLED device, the Metal Packaging layer is centered around the surrounding of the frame glue;
Thin-film encapsulation layer in the OLED device.
Further, the side of Metal Packaging layer towards the cover board is additionally provided with intermediate metal.
Further, the side of Metal Packaging layer towards the array substrate is additionally provided with intermediate metal.
Further, the side of the intermediate metal towards the array substrate is additionally provided with insulating layer.
Further, the material of the Metal Packaging layer be fusing point be lower than preset temperature alloy, the alloy be bismuth, Cadmium, tin, in indium at least two metals alloy.
Further, the material of the intermediate metal is aluminium.
The embodiment of the invention also provides a kind of OLED encapsulation methods, comprising:
Array substrate and cover board are provided;
OLED device and thin-film encapsulation layer are sequentially formed in the array substrate;
Frame glue is formed in the surrounding of the OLED device;
The cover board and the array substrate are combined, and form gold between cover board after combining and array substrate Belong to encapsulated layer;The Metal Packaging layer is centered around the surrounding of the frame glue.
Further, it is described the cover board and the array substrate are combined before, further includes:
Insulating layer and intermediate metal are sequentially formed in the surrounding of the frame glue;
Intermediate metal is formed on the cover board;The gold on intermediate metal and the array substrate on the cover board The position for belonging to transition zone is corresponding.
Further, Metal Packaging layer is formed between the cover board and array substrate after combining, is specifically included:
By the way of 3D printing by fusing point lower than preset temperature alloy print to the cover board intermediate metal and Between the intermediate metal of the array substrate, Metal Packaging layer is formed.
Further, it is formed after Metal Packaging layer between the cover board and array substrate after combining, further includes:
It polishes the edge of the cover board and the array substrate.
The invention has the benefit that thin-film encapsulation layer, array substrate are arranged between array substrate and the viewing area of cover board Frame glue and Metal Packaging layer are set between the non-display area of cover board, and Metal Packaging layer is centered around the surrounding of frame glue, to cover On the basis of plate encapsulation and thin-film package, the edge of OLED device is encapsulated again, improves OLED device isolation water oxygen Ability, and then extend the service life of OLED device.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these Figure obtains other attached drawings.
Fig. 1 is the structural schematic diagram of OLED encapsulating structure provided in an embodiment of the present invention;
Fig. 2 is the top view of array substrate in OLED encapsulating structure provided in an embodiment of the present invention;
Fig. 3 is another structural schematic diagram of OLED encapsulating structure provided in an embodiment of the present invention;
Fig. 4 is the flow diagram of OLED encapsulation method provided in an embodiment of the present invention.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side] Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
It is the structural schematic diagram of OLED encapsulating structure provided in an embodiment of the present invention referring to Fig. 1.
OLED encapsulating structure provided in an embodiment of the present invention includes array substrate 1 and cover board 2.Wherein, array substrate 1 and lid Plate 2 is opposite and is arranged in parallel.Array substrate 1 and cover board 2 include viewing area and non-display area, and the viewing area of array substrate 1 The viewing area of domain cover board 2 is correspondingly arranged, and the non-display area of array substrate 1 and the non-display area of cover board 2 are correspondingly arranged.
OLED device 3 is provided between the viewing area of array substrate 1 and the viewing area of cover board 2, OLED device 3 is equipped with thin Film encapsulated layer 4, the thin-film encapsulation layer 4 include that multilayer is inorganic or organic film, enter OLED device 3 for completely cutting off water oxygen.
It is provided with frame glue 5 between the non-display area of array substrate 1 and the non-display area of cover board 2, which is centered around OLED The surrounding of device 3, as shown in Fig. 2, being sealed array substrate 1 and cover board 2 by OLED device 3 by frame glue 5, with isolation Water oxygen enters OLED device 3.
It is additionally provided with fringe region on array substrate 1 and cover board 2, which is centered around the surrounding of frame glue 5, array substrate It is provided with Metal Packaging layer 6 between 1 fringe region and the fringe region of cover board 2, i.e., metal envelope is set again in the outside of frame glue 5 Layer 6 is filled, and Metal Packaging layer 6 is centered around the surrounding of frame glue 5, as shown in Fig. 2, carrying out with the edge to array substrate 1 and cover board 2 It encapsulates again, further completely cuts off water oxygen and enter OLED device 3.
In a specific embodiment, the material of Metal Packaging layer 6 is low-melting alloy, i.e., fusing point is lower than default temperature The alloy of degree.The low-melting alloy of melting is printed into the gap between array substrate 1 and cover board 2 by way of 3D printing In, the low-melting alloy of melting has certain mobility, can come drawout between array substrate 1 and cover board 2, form gold Belong to encapsulated layer 6.Wherein, the fusing point of low-melting alloy is lower than 150 DEG C, damages to avoid temperature is excessively high to OLED device.It is low Melting alloy can be the alloys, such as bismuth tin alloy, indium stannum alloy of metals such as bismuth, cadmium, tin, indium etc..
Further, the side of Metal Packaging layer towards the cover board is additionally provided with intermediate metal, the metal envelope The side of dress layer towards the array substrate is additionally provided with intermediate metal.As shown in figure 3, on the fringe region of array substrate 1 also Equipped with intermediate metal 7, intermediate metal 8 is additionally provided on the fringe region of cover board 1, Metal Packaging layer 6 is set to intermediate metal 7 Between intermediate metal 8.Wherein, intermediate metal 7 and intermediate metal 8 use CVD (Chemical Vapor Deposition, chemical vapor deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition, etc. Gas ions enhance chemical vapor deposition) mode deposited, to improve low-melting alloy to the wellability of glass, make low melting point Alloy has with array substrate 1, cover board 2 preferably to be contacted.In a specific embodiment, intermediate metal 7 and metal mistake The material for crossing layer 8 is metallic aluminium (Al).
Further, the side of the intermediate metal towards the array substrate is additionally provided with insulating layer.As shown in figure 3, Insulating layer 9 is additionally provided on the fringe region of array substrate 1, intermediate metal 7 is set on insulating layer 9.Array substrate 1 and metal mistake Cross between layer 7 and deposit a layer insulating 9, to avoid the TFT in array substrate 1 is contacted with intermediate metal 7 and it is short-circuit.At one In specific embodiment, the material of insulating layer 9 is silica (SiO2)。
It can be seen from the above, OLED encapsulating structure provided in this embodiment, by the viewing area of array substrate and cover board it Between thin-film encapsulation layer is set, frame glue and Metal Packaging layer, and Metal Packaging are set between array substrate and the non-display area of cover board Layer is centered around the surrounding of frame glue, sealed again on the basis of cover board encapsulation and thin-film package to the edge of OLED device Dress, improves the ability of OLED device isolation water oxygen, and then extends the service life of OLED device.
It referring to fig. 4, is the flow diagram of OLED encapsulation method provided in an embodiment of the present invention.
OLED encapsulation method provided in this embodiment may comprise steps of:
101, array substrate and cover board are provided.
102, OLED device and thin-film encapsulation layer are sequentially formed in the array substrate.
In the present embodiment, as shown in Figure 1, array substrate 1 includes viewing area and non-display area, OLED device 3 is formed in battle array The viewing area of column substrate 1, thin-film encapsulation layer 4 are formed in OLED device 3, which includes that multilayer is inorganic or organic Film enters OLED device 3 for completely cutting off water oxygen.
103, frame glue is formed in the surrounding of the OLED device.
In the present embodiment, as shown in Figure 1, the non-display area of array substrate 1 forms frame glue 5, and frame glue 5 is centered around OLED device The surrounding of part 3, as shown in Figure 2.
104, the cover board and the array substrate are combined, and shape between cover board after combining and array substrate At Metal Packaging layer;The Metal Packaging layer is centered around the surrounding of the frame glue.
In the present embodiment, as shown in Figure 1, cover board 2 and array substrate 1 are combined, keep array substrate 1 and cover board 2 logical It crosses frame glue 5 to be sealed OLED device 3, enters OLED device 3 to completely cut off water oxygen.On cover board 2 and array substrate 1 after combination Equipped with fringe region, which is centered around the surrounding of frame glue 5, the fringe region of array substrate 1 and the fringe region of cover board 2 Between be provided with Metal Packaging layer 6, i.e., Metal Packaging layer 6 is set again in the outside of frame glue 5, and Metal Packaging layer 6 is centered around frame The surrounding of glue 5 is further completely cut off water oxygen and entered as shown in Fig. 2, being encapsulated again with the edge to array substrate 1 and cover board 2 OLED device 3.
Further, it is described the cover board and the array substrate are combined before, further includes:
Insulating layer and intermediate metal are sequentially formed in the surrounding of the frame glue;
Intermediate metal is formed on the cover board;The gold on intermediate metal and the array substrate on the cover board The position for belonging to transition zone is corresponding.
It should be noted that as shown in figure 3, sequentially forming insulating layer 9 and metal mistake on the fringe region of array substrate 1 Layer 7 is crossed, forms intermediate metal 8 on the fringe region of cover board 1, forms gold between intermediate metal 7 and intermediate metal 8 Belong to encapsulated layer 6.Wherein, intermediate metal 7 and intermediate metal 8 are deposited by the way of CVD or PECVD, low to improve Melting alloy has Metal Packaging layer 6 with array substrate 1, cover board 2 and preferably contacts to the wellability of glass.It is specific at one Embodiment in, the material of intermediate metal 7 and intermediate metal 8 is metallic aluminium (Al).Array substrate 1 and intermediate metal A layer insulating 9 is deposited between 7, to avoid the TFT in array substrate 1 is contacted with intermediate metal 7 and it is short-circuit.It is specific at one Embodiment in, the material of insulating layer 9 is silica (SiO2)。
Further, Metal Packaging layer is formed between the cover board and array substrate after combining, is specifically included:
By the way of 3D printing by fusing point lower than preset temperature alloy print to the cover board intermediate metal and Between the intermediate metal of the array substrate, Metal Packaging layer is formed.
It should be noted that the material of Metal Packaging layer 6 be low-melting alloy, i.e., fusing point be lower than preset temperature alloy. The low-melting alloy of melting printed to by way of 3D printing in the gap between array substrate 1 and cover board 2, melting it is low Melting alloy has certain mobility, can come drawout between array substrate 1 and cover board 2, form Metal Packaging layer 6. Wherein, the fusing point of low-melting alloy is lower than 150 DEG C, damages to avoid temperature is excessively high to OLED device.Low-melting alloy can Think alloy of the metals such as bismuth, cadmium, tin, indium, such as bismuth tin alloy, indium stannum alloy etc..
Further, it is formed after Metal Packaging layer between the cover board and array substrate after combining, further includes:
It polishes the edge of the cover board and the array substrate.
It should be noted that forming Metal Packaging layer in cover board and the fringe region of array substrate, low melting point may cause Metal spills into the side of cover board and array substrate, is polished by the edge to cover board and array substrate, increase cover board and The flatness at array substrate edge.
It can be seen from the above, OLED encapsulation method provided in this embodiment, by the viewing area of array substrate and cover board it Between thin-film encapsulation layer is set, frame glue and Metal Packaging layer, and Metal Packaging are set between array substrate and the non-display area of cover board Layer is centered around the surrounding of frame glue, sealed again on the basis of cover board encapsulation and thin-film package to the edge of OLED device Dress, improves the ability of OLED device isolation water oxygen, and then extends the service life of OLED device.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention Decorations, therefore protection scope of the present invention subjects to the scope of the claims.

Claims (10)

1. a kind of OLED encapsulating structure characterized by comprising
The array substrate and cover board being oppositely arranged;
OLED device, frame glue and Metal Packaging layer between the array substrate and the cover board;The frame glue is centered around The surrounding of the OLED device, the Metal Packaging layer are centered around the surrounding of the frame glue;
Thin-film encapsulation layer in the OLED device.
2. OLED encapsulating structure according to claim 1, which is characterized in that the Metal Packaging layer is towards the cover board Side is additionally provided with intermediate metal.
3. OLED encapsulating structure according to claim 1, which is characterized in that the Metal Packaging layer is towards the array base The side of plate is additionally provided with intermediate metal.
4. OLED encapsulating structure according to claim 3, which is characterized in that the intermediate metal is towards the array base The side of plate is additionally provided with insulating layer.
5. OLED encapsulating structure according to claim 1, which is characterized in that the material of the Metal Packaging layer is that fusing point is low In the alloy of preset temperature, the alloy be bismuth, cadmium, tin, in indium at least two metals alloy.
6. OLED encapsulating structure according to claim 2 or 3, which is characterized in that the material of the intermediate metal is aluminium.
7. a kind of OLED encapsulation method characterized by comprising
Array substrate and cover board are provided;
OLED device and thin-film encapsulation layer are sequentially formed in the array substrate;
Frame glue is formed in the surrounding of the OLED device;
The cover board and the array substrate are combined, and form metal envelope between cover board after combining and array substrate Fill layer;The Metal Packaging layer is centered around the surrounding of the frame glue.
8. OLED encapsulation method according to claim 7, which is characterized in that described by the cover board and the array base Before plate is combined, further includes:
Insulating layer and intermediate metal are sequentially formed in the surrounding of the frame glue;
Intermediate metal is formed on the cover board;The metal mistake on intermediate metal and the array substrate on the cover board The position for crossing layer is corresponding.
9. OLED encapsulation method according to claim 8, which is characterized in that the cover board and array substrate after combining Between formed Metal Packaging layer, specifically include:
Fusing point is printed into the intermediate metal of the cover board and described lower than the alloy of preset temperature by the way of 3D printing Between the intermediate metal of array substrate, Metal Packaging layer is formed.
10. OLED encapsulation method according to claim 7, which is characterized in that the cover board and array base after combining It is formed after Metal Packaging layer between plate, further includes:
It polishes the edge of the cover board and the array substrate.
CN201910271992.4A 2019-04-04 2019-04-04 A kind of OLED encapsulating structure and OLED encapsulation method Pending CN110071223A (en)

Priority Applications (2)

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CN201910271992.4A CN110071223A (en) 2019-04-04 2019-04-04 A kind of OLED encapsulating structure and OLED encapsulation method
PCT/CN2019/083600 WO2020199268A1 (en) 2019-04-04 2019-04-22 Oled packaging structure and oled packaging method

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CN201910271992.4A CN110071223A (en) 2019-04-04 2019-04-04 A kind of OLED encapsulating structure and OLED encapsulation method

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110854294A (en) * 2019-11-20 2020-02-28 上海大学 OLED packaging method and OLED obtained through packaging
CN114665041A (en) * 2022-03-16 2022-06-24 深圳市华星光电半导体显示技术有限公司 Display panel and preparation method thereof

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CN104916789A (en) * 2015-06-30 2015-09-16 京东方科技集团股份有限公司 OLED encapsulation method and OLED device
CN107248550A (en) * 2017-06-26 2017-10-13 深圳市华星光电技术有限公司 The method for packing of oled panel

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103035849A (en) * 2012-12-20 2013-04-10 友达光电股份有限公司 Organic light emitting diode packaging structure
CN107863453B (en) * 2017-11-08 2020-09-29 固安翌光科技有限公司 OLED device based on end face packaging and preparation method thereof

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
CN104916789A (en) * 2015-06-30 2015-09-16 京东方科技集团股份有限公司 OLED encapsulation method and OLED device
CN107248550A (en) * 2017-06-26 2017-10-13 深圳市华星光电技术有限公司 The method for packing of oled panel

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110854294A (en) * 2019-11-20 2020-02-28 上海大学 OLED packaging method and OLED obtained through packaging
CN114665041A (en) * 2022-03-16 2022-06-24 深圳市华星光电半导体显示技术有限公司 Display panel and preparation method thereof

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