CN110061084A - 一种基于CdSCdSeCdS量子点修饰的全无机钙钛矿太阳能电池结构及制备方法 - Google Patents
一种基于CdSCdSeCdS量子点修饰的全无机钙钛矿太阳能电池结构及制备方法 Download PDFInfo
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Abstract
本发明公开了一种基于CdS/CdSe/CdS量子点修饰的全无机钙钛矿太阳能电池结构及制备方法，属于太阳能电池生产技术领域；该电池结构包括依次层叠设置的玻璃基底(1)、负极(2)、电子传输层(3)、量子点(4)、钙钛矿层(5)和正极(6)，所述量子点(4)为CdS/CdSe/CdS量子点；在全无机钙钛矿太阳能电池的电子传输层与钙钛矿层中间添加CdS/CdSe/CdS量子点层，实现台阶式能级结构；本发明的优点是通过优化CdS/CdSe/CdS量子点CdSe层厚度，进一步优化CdS/CdSe/CdS量子点的能级，提高载流子在电子传输层层与钙钛矿层中间的传输速率，最终提高全无机钙钛矿太阳能电池的光电转化效率。该工艺简单、生产难度小、稳定性强，可为人们生活创造更高效的太阳能电池器件。
Description
技术领域
本发明涉及一种太阳能电池及其制备方法，具体涉及一种基于CdSCdSeCdS量子点修饰的全无机钙钛矿太阳能电池结构及制备方法，属于太阳能电池生产技术领域。
背景技术
量子点具有大的表面效应，随着尺寸的减小其表面原子数增加，表面积与整体体积的比急剧增大，表面能增大，表面大量的不饱和悬挂键严重破坏了晶格周期性，导致在量子点表面形成了众多空穴和电子缺陷态，影响量子点的发光性质。钝化量子点的表面态，增加量子点的发光效率和光化学稳定性的途径主要有两种：一，量子点表面修饰有机配体；二量子点表面包覆无机壳层。通常，壳材料可以起到钝化层的作用，以减少表面的悬挂键，同时厚的无机壳层能增加量子点的光化学稳定性。
全无机钙钛矿太阳能电池被认为是光伏市场上强有力的竞争对手。然而，光电转换效率一直差强人意，考虑到界面电荷转移，减小界面能极差和钝化界面缺陷提供了减少空间电荷积累和加强电荷提取的可能性，我们提出一种基于CdS/CdSe/CdS量子点修饰的全无机钙钛矿太阳能电池结构。在全无机钙钛矿太阳能电池的电子传输层与钙钛矿层中间添加CdS/CdSe/CdS量子点层，实现台阶式能级结构，提高载流子在电子传输层与钙钛矿层中间的传输速率，最终提高全无机钙钛矿太阳能电池的光电转化效率。
发明内容
本发明主要解决的技术问题是提供一种基于CdS/CdSe/CdS量子点修饰的全无机钙钛矿太阳能电池结构，减小界面能极差和钝化界面缺陷提供了减少空间电荷积累和加强电荷提取，提高载流子在电子传输层与钙钛矿层中间的传输速率，最终提高全无机钙钛矿太阳能电池的光电转化效率。
为解决上述技术问题，本发明采用以下技术方案：
一种基于CdS/CdSe/CdS量子点修饰的全无机钙钛矿太阳能电池结构，该电池结构包括依次层叠设置的玻璃基底(1)、负极(2)、电子传输层(3)、量子点(4)、钙钛矿层(5)和正极(6)，所述量子点(4)为CdS/CdSe/CdS量子点；
所述的CdS/CdSe/CdS量子点(4)是在300℃下通过热注入法合成的；
在全无机钙钛矿太阳能电池的电子传输层与钙钛矿层中间添加CdS/CdSe/CdS量子点层；
所述的CdS/CdSe/CdS量子点(4)尺寸为发射波长620nm、半径7-8nm；
所述的CdS/CdSe/CdS量子点(4)LOMO能级-3.72eV～-3.87eV；
所述的CdS/CdSe/CdS量子点(4)作为修饰层的厚度为20-30nm；
所述的CdS/CdSe/CdS量子点(4)的制备方法包括如下步骤：
(1)前驱体合成：
油酸镉Cd(OA)2合成：在三口瓶中加入氧化镉CdO、油酸OA和十八烯1-ODE，升温至150℃，抽气半小时，然后通入氩气升温至250℃停止；
(2)CdS/CdSe/CdS量子点合成步骤：
(1)合成CdS核：三口瓶中加入9mL 1-ODE和0.6mL溶解的前驱体Cd(OA)2，升温至150℃，抽气半小时，然后通入氩气升温至270℃，快速注入0.5mL 0.25mmol/mL辛硫醇溶解十八烯，降温至250℃保温10min，停止反应，原液离心去沉淀，上清液中加入适量甲苯和过量乙醇直至溶液完全浑浊，将此时的溶液进行离心，取沉淀去掉上清液，重复两遍后用2mL甲苯将所得沉淀进行溶解提纯；
(2)CdS/CdSe量子点的合成：三口瓶中加入提纯过的2mL CdS核和6mL1-ODE，升温至150℃，抽气半小时，然后通入氩气升温至300℃，按照摩尔比1:1混合Cd(OA)2和TOPSe，以5mL/h的速率滴加，然后保温10min结束，并进行CdS/CdSe量子点提纯；
(3)CdS/CdSe/CdS量子点合成：三口瓶中加入提纯过的2mL CdS/CdSe量子点和6mL1-ODE，升温至150℃，抽气半小时，然后通入氩气升温至300℃，以2mL/h的速率分别滴加Cd(OA)2和DDT，保温十分钟停止，并进行CdS/CdSe/CdS量子点提纯。
所述的CdS/CdSe/CdS量子点(4)应用于全无机钙钛矿太阳能电池。
CdS/CdSe/CdS量子点的合成需要多步来完成，发光层为CdSe层，可以通过改变不同的CdSe层厚度来实现不同波段材料的制备，但是量子能级最佳的CdSe发光层厚度是需要实验对比来探究得到。本发明的主要特点在于中间发光层的厚度选择在300℃下合成，这样可以缓解CdS核与CdSe发光层之间的晶格适配度，使得CdSe相干应变层很好的结晶，此时随着外壳层CdS的包覆，所得的量子点的光稳定性最好，并且能级与全无机钙钛矿太阳能电池的能级结构更加匹配。
本发明的有益效果是：通过优化CdS/CdSe/CdS量子点CdSe层厚度，进一步优化CdS/CdSe/CdS量子点的能级，提高载流子在电子传输层与钙钛矿层中间的传输速率，最终提高全无机钙钛矿太阳能电池的光电转化效率。本发明工艺简单、生产难度小、稳定性强，可为人们生活创造更高效的太阳能电池器件。
附图说明
图1为本发明的结构示意图；其中，1-玻璃基底、2-负极、3-电子传输层、4-量子点、5-钙钛矿层和6-正极。
具体实施方式
为了更好的理解本发明，下面结合附图及实施例对本发明的内容做进一步阐述，这些实施例仅用于说明本发明，并不限制本发明的保护范围。
实施例
一种基于CdS/CdSe/CdS量子点修饰的全无机钙钛矿太阳能电池结构，包括依次层叠设置的玻璃基底(1)、负极(2)、电子传输层(3)、量子点(4)、钙钛矿层(5)和正极(6)，所述量子点(4)为CdS/CdSe/CdS量子点，尺寸为发射波长620nm、半径7-8nm，LOMO能级-3.72eV～-3.87eV，厚度为20-30nm，CdS/CdSe/CdS量子点(4)是在300℃下通过热注入法合成的；
所述的CdS/CdSe/CdS量子点(4)的制备方法包括如下步骤：
(1)前驱体合成：
油酸镉Cd(OA)2合成：在三口瓶中加入氧化镉CdO、油酸OA和十八烯1-ODE，升温至150℃，抽气半小时，然后通入氩气升温至250℃停止；
(2)CdS/CdSe/CdS量子点合成步骤：
(1)合成CdS核：三口瓶中加入9mL 1-ODE和0.6mL溶解的前驱体Cd(OA)2，升温至150℃，抽气半小时，然后通入氩气升温至270℃，快速注入0.5mL 0.25mmol/mL辛硫醇溶解十八烯，降温至250℃保温10min，停止反应，原液离心去沉淀，上清液中加入适量甲苯和过量乙醇直至溶液完全浑浊，将此时的溶液进行离心，取沉淀去掉上清液，重复两遍后用2mL甲苯将所得沉淀进行溶解提纯；
(2)CdS/CdSe量子点的合成：三口瓶中加入提纯过的2mL CdS核和6mL1-ODE，升温至150℃，抽气半小时，然后通入氩气升温至300℃，按照摩尔比1:1混合Cd(OA)2和TOPSe，以5mL/h的速率滴加，然后保温10min结束，并进行CdS/CdSe量子点提纯；
(3)CdS/CdSe/CdS量子点合成：三口瓶中加入提纯过的2mL CdS/CdSe量子点和6mL1-ODE，升温至150℃，抽气半小时，然后通入氩气升温至300℃，以2mL/h的速率分别滴加Cd(OA)2和DDT，保温十分钟停止，并进行CdS/CdSe/CdS量子点提纯。
实施例2
参见图1，基于CdS/CdSe/CdS量子点修饰的全无机钙钛矿太阳能电池结构，其结构包括依次层叠设置的玻璃基底1、负极2、电子传输层3、量子点4、钙钛矿层5和正极6。在覆有电极的衬底上采用匀胶旋涂的方法或者喷墨打印的方法依次制备电子传输层、量子点修饰层、钙钛矿层以及正极。最终得到CdS/CdSe/CdS量子点修饰的全无机钙钛矿太阳能电池器件。
Claims (8)
1.一种基于CdS/CdSe/CdS量子点修饰的全无机钙钛矿太阳能电池结构，其特征在于：该电池结构包括依次层叠设置的玻璃基底(1)、负极(2)、电子传输层(3)、量子点(4)、钙钛矿层(5)和正极(6)，所述量子点(4)为CdS/CdSe/CdS量子点。
2.根据权利要求书1所述的一种基于CdS/CdSe/CdS量子点修饰的全无机钙钛矿太阳能电池结构，其特征在于：所述的CdS/CdSe/CdS量子点(4)是在300℃下通过热注入法合成的。
3.根据权利要求书1所述的一种基于CdS/CdSe/CdS量子点修饰的全无机钙钛矿太阳能电池结构，其特征在于：在全无机钙钛矿太阳能电池的电子传输层与钙钛矿层中间添加CdS/CdSe/CdS量子点层。
4.根据权利要求书1所述的一种基于CdS/CdSe/CdS量子点修饰的全无机钙钛矿太阳能电池结构，其特征在于：所述的CdS/CdSe/CdS量子点(4)尺寸为发射波长620nm、半径7-8nm。
5.根据权利要求书1所述的一种基于CdS/CdSe/CdS量子点修饰的全无机钙钛矿太阳能电池结构，其特征在于：所述的CdS/CdSe/CdS量子点(4)LOMO能级-3.72eV～-3.87eV。
6.根据权利要求书1所述的一种基于CdS/CdSe/CdS量子点修饰的全无机钙钛矿太阳能电池结构，其特征在于：所述的CdS/CdSe/CdS量子点(4)作为修饰层的厚度为20-30nm。
7.根据权利要求书1所述的一种基于CdS/CdSe/CdS量子点修饰的全无机钙钛矿太阳能电池结构，其特征在于：所述的CdS/CdSe/CdS量子点(4)的制备方法包括如下步骤：
(1)前驱体合成：
油酸镉Cd(OA)2合成：在三口瓶中加入氧化镉CdO、油酸OA和十八烯1-ODE，升温至150℃，抽气半小时，然后通入氩气升温至250℃停止；
(2)CdS/CdSe/CdS量子点合成步骤：
(1)合成CdS核：三口瓶中加入9mL1-ODE和0.6mL溶解的前驱体Cd(OA)2，升温至150℃，抽气半小时，然后通入氩气升温至270℃，快速注入0.5mL0.25mmol/mL辛硫醇溶解十八烯，降温至250℃保温10min，停止反应，原液离心去沉淀，上清液中加入适量甲苯和过量乙醇直至溶液完全浑浊，将此时的溶液进行离心，取沉淀去掉上清液，重复两遍后用2mL甲苯将所得沉淀进行溶解提纯；
(2)CdS/CdSe量子点的合成：三口瓶中加入提纯过的2mL CdS核和6mL1-ODE，升温至150℃，抽气半小时，然后通入氩气升温至300℃，按照摩尔比1:1混合Cd(OA)2和TOPSe，以5mL/h的速率滴加，然后保温10min结束，并进行CdS/CdSe量子点提纯；
(3)CdS/CdSe/CdS量子点合成：三口瓶中加入提纯过的2mL CdS/CdSe量子点和6mL1-ODE，升温至150℃，抽气半小时，然后通入氩气升温至300℃，以2mL/h的速率分别滴加Cd(OA)2和DDT，保温十分钟停止，并进行CdS/CdSe/CdS量子点提纯。
8.根据权利要求书1所述的一种基于CdS/CdSe/CdS量子点修饰的全无机钙钛矿太阳能电池结构，其特征在于：所述的CdS/CdSe/CdS量子点(4)应用于全无机钙钛矿太阳能电池的制备。
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| CN111847499A (zh) * | 2020-08-07 | 2020-10-30 | 北京理工大学 | 基于离子交换反应制备掺杂铜的硫化镉纳米片的方法 |
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| CN111847499A (zh) * | 2020-08-07 | 2020-10-30 | 北京理工大学 | 基于离子交换反应制备掺杂铜的硫化镉纳米片的方法 |
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