CN110060983A - Antenna packages structure and packaging method - Google Patents
Antenna packages structure and packaging method Download PDFInfo
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- CN110060983A CN110060983A CN201910433159.5A CN201910433159A CN110060983A CN 110060983 A CN110060983 A CN 110060983A CN 201910433159 A CN201910433159 A CN 201910433159A CN 110060983 A CN110060983 A CN 110060983A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0231—Manufacturing methods of the redistribution layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0233—Structure of the redistribution layers
- H01L2224/02331—Multilayer structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02379—Fan-out arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02381—Side view
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
It includes: re-wiring layer that the present invention, which provides a kind of antenna packages structure and packaging method, structure,；Metal feeder column is formed on the second face of re-wiring layer；First encapsulated layer coats metal feeder column；First antenna metal layer is connect with the metal feeder column；Adhesion layer is protected, is covered on first antenna metal layer；Second encapsulated layer；Second antenna metal layer；At least one antenna circuit chip is connected to the first face of re-wiring layer by metal connecting line；Third encapsulated layer is at least surrounded on the side of antenna circuit chip；Metal coupling realizes that the electrical of re-wiring layer is drawn.All driving components or passive component can be integrated in an encapsulating structure by the present invention by the trace arrangements of different re-wiring layers, can effectively reduce package dimension.Structure of the invention is homeotropic texture, can effectively shorten conducting path between component, has better electrical property and antenna performance, while having lower power consumption.
Description
Technical field
The invention belongs to encapsulation field and domain of communication equipment, more particularly to a kind of antenna packages structure and encapsulation side
Method.
Background technique
Due to the progress of science and technology, various high-tech electronic products are developed to facilitate people's lives, including each
Kind electronic device, such as: notebook computer, mobile phone, tablet computer (PAD).
With universal and people's demand the increase of these high-tech electronic products, in addition to institute in these high-tech products
Outside the various functions of configuration and application increase considerably, wireless telecommunications are increased especially for the mobile demand of cooperation people
Function.Then, people can be installed on any place or be appointed by these high-tech electronics with wireless communication function
When quarter uses these high-tech electronic products.To significantly increase the flexibility that these high-tech electronic products use
With convenience, therefore, people need not be again limited in a fixed region, break the boundary of use scope, so that
The application of these electronic products veritably facilitates people's lives.
In the application of antenna, such as need in the application of mobile phone terminal, antenna transmission and reception signal by multiple functions
Chip dies go to be composed, it is known that the practice be that antenna is directly made in the surface of circuit board (PCB), the disadvantage is that this work
Method can allow antenna to occupy additional board area, also, because transmission signal route is long, inefficiency power consumption is big, packaging body
Product is larger, and especially it is too big to be encapsulated in the lower loss of 5G millimeter wave transmission for traditional PCB.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of antenna packages structure and encapsulation
Method, for solving the problems, such as that antenna packages volume is big in the prior art and signal transmission attenuation is big.
In order to achieve the above objects and other related objects, the present invention provides a kind of antenna packages structure, the encapsulating structure
It include: re-wiring layer, the re-wiring layer includes the first face and the second opposite face；Metal feeder column is formed in institute
It states on the second face of re-wiring layer；First encapsulated layer coats the metal feeder column, and its top surface appears the metal feeder
Column；First antenna metal layer is formed on first encapsulated layer, and the antenna metal layer is connect with the metal feeder column；
Adhesion layer is protected, is covered on the first antenna metal layer；Second encapsulated layer is covered on the protection adhesion layer；Second
Antenna metal layer is formed on second encapsulated layer；At least one antenna circuit chip, is adhered to the re-wiring layer
First face, the electrode of the antenna circuit chip deviate from the re-wiring layer, are formed with connecting hole in the re-wiring layer,
The connecting hole appears the metal wiring layer in the re-wiring layer, and the electrode is connected the electrode by metal connecting line
To the metal wiring layer；Third encapsulated layer is covered in the antenna circuit chip, the metal connecting line and connecting hole, described
There is aperture in third encapsulated layer and the re-wiring layer；Metal coupling, be formed in the aperture and with the cloth again
Line layer is electrically connected, to realize that the electrical of the re-wiring layer is drawn.
Optionally, the material of the protection adhesion layer includes polyimides.
Optionally, the interconnecting piece of the metal feeder column and the re-wiring layer has lower metal layer, the metal feedback
The material of terminal includes one of Au, Ag, Cu, Al, and the material of the lower metal layer includes the Ni layers of lamination formed with Au layers.
Optionally, the material of first encapsulated layer, the second encapsulated layer and third encapsulated layer includes silica gel and asphalt mixtures modified by epoxy resin
One of rouge.
Optionally, the antenna circuit chip is multiple, and the antenna circuit chip includes driving component and passive component
One of, wherein the driving component includes one of electric power management circuit, transmit circuit and reception circuit, the quilt
Dynamic component includes one of resistance, capacitor and inductance.
Optionally, seal protection layer is also filled up between the antenna circuit chip and the re-wiring layer.
The present invention also provides a kind of packaging method of antenna, the packaging method comprising steps of 1) provide a support substrate,
In forming separating layer in the support substrate；2) re-wiring layer is formed in Yu Suoshu separating layer, the re-wiring layer includes
The first face and the second opposite face being connect with the separating layer；3) metal is formed on the second face of Yu Suoshu re-wiring layer
Feeder pillar；4) the metal feeder column is encapsulated using the first encapsulated layer, first encapsulated layer is thinned, so that the metal feeder
The top surface of column is exposed to first encapsulated layer；5) formation first antenna metal layer on the first encapsulated layer of Yu Suoshu, described first
Antenna metal layer is connect with the metal feeder column；6) the protection adhesion layer for covering the first antenna metal layer is formed；7) in
The second encapsulated layer is formed on the protection adhesion layer；8) the second antenna metal layer is formed on the second encapsulated layer of Yu Suoshu；9) it is based on
The separating layer removes the re-wiring layer and the support substrate, exposes the first face of the re-wiring layer；10) in institute
It states and forms connecting hole in re-wiring layer, the connecting hole appears the metal wiring layer in the re-wiring layer；11) day is provided
Line circuit chip, by the antenna circuit adhesive die attachment in the first face of the re-wiring layer, the antenna circuit chip
Electrode deviates from the re-wiring layer, and the electrode is connected to the metal wiring layer by metal connecting line；12) third is used
Encapsulated layer encapsulates the antenna circuit chip, the metal connecting line and the connecting hole；13) Yu Suoshu third encapsulated layer and described
Aperture is formed in re-wiring layer, forms metal coupling in Yu Suoshu aperture, to realize that the electrical of the re-wiring layer is drawn.
Optionally, the support substrate includes glass substrate, metal substrate, semiconductor substrate, polymer substrate and ceramics
One of substrate.
Optionally, the separating layer includes photothermal transformation layer, and step 9) uses photothermal transformation layer described in laser irradiation, so that
The photothermal transformation layer is separated with the re-wiring layer and the support substrate, and then removes the re-wiring layer and described
Support substrate.
Optionally, step 2) makes the re-wiring layer comprising steps of 2-1) first is formed in the separation layer surface
Dielectric layer；Seed layer 2-2) is formed in the first medium layer surface using sputtering technology, forms first in Yu Suoshu seed layer
Metal layer, and the first metal layer and the seed layer are performed etching to form patterned first metal wiring layer；2-3)
Second dielectric layer is formed in the patterned first metal line layer surface, and the second dielectric layer is performed etching to be formed
Second dielectric layer with graphical through-hole；2-4) in filling conductive plug in the graphical through-hole, then using sputtering work
Skill forms second metal layer in the second medium layer surface, and performs etching to form patterned second gold medal to the metal layer
Belong to wiring layer.
Optionally, further comprise the steps of: and repeat step 2-3)~step 2-4), there is multilayer lamination structure to be formed
Re-wiring layer.
Optionally, the material of the protection adhesion layer includes polyimides.
Optionally, metal feeder column is formed on the second face of Yu Suoshu re-wiring layer comprising steps of in the cloth again
Lower metal layer is formed on line layer；Using routing technique or electroplating technology or chemical plating process in forming metal on the lower metal layer
Feeder pillar.
Optionally, the lower metal layer includes the Ni layers of lamination formed with Au layers.
Optionally, the electrode is connected to the metal wiring layer using routing technique by step 11).
Optionally, the material of the metal feeder column includes one of Au, Ag, Cu, Al.
Optionally, the method for forming first encapsulated layer, the second encapsulated layer and third encapsulated layer includes compression forming, passes
Pass one of molded, fluid-tight molding, vacuum lamination and spin coating, first encapsulated layer, the second encapsulated layer and third envelope
The material for filling layer includes one of silica gel and epoxy resin.
Optionally, the antenna circuit chip is multiple, and the antenna circuit chip includes driving component and passive component
One of, wherein the driving component includes one of electric power management circuit, transmit circuit and reception circuit, the quilt
Dynamic component includes one of resistance, capacitor and inductance.
As described above, antenna packages structure of the invention and packaging method, have the advantages that
All driving components or passive component can be integrated in by the present invention by the trace arrangements of different re-wiring layers
In one encapsulating structure, package dimension can be effectively reduced.
The structure settings such as antenna circuit chip, re-wiring layer and antenna metal of the invention are homeotropic texture, can
It effectively shortens conducting path between component, has better electrical property and antenna performance, while there is lower power consumption.
Protection adhesion layer is arranged in the present invention between two layers adjacent of antenna structure, on the one hand can protect to antenna metal
Shield, on the other hand can be improved the adhesion property between adjacent two layers antenna structure, improves the Mechanical Structure Strength of antenna.
Antenna circuit chip and metal connecting line are protected using encapsulated layer in the back side of the present invention, can effectively improve encapsulation knot
The stability of structure.
The present invention uses fan-out package method encapsulating antenna structure, encapsulation volume can be effectively reduced, so that antenna packages
Structure integrated level with higher and better encapsulation performance, are with a wide range of applications in field of semiconductor package.
Detailed description of the invention
Fig. 1~Figure 19 is shown as the structural schematic diagram that each step of packaging method of antenna of the invention is presented, wherein figure
19 are shown as the structural schematic diagram of antenna packages structure of the invention.
Component label instructions
101 support substrates
102 separating layers
201 first medium layers
202 first metal wiring layers
203 second dielectric layer
204 second metal wiring layers
301 lower metal layers
302 metal feeder columns
303 first encapsulated layers
304 first antenna metal layers
305 protection adhesion layers
306 second encapsulated layers
307 second antenna metal layers
308 connecting holes
401 antenna circuit chips
402 metal connecting lines
403 third encapsulated layers
404 apertures
501 metal couplings
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Such as when describing the embodiments of the present invention, for purposes of illustration only, indicating that the sectional view of device architecture can disobey general proportion
Make partial enlargement, and the schematic diagram is example, the scope of protection of the invention should not be limited herein.In addition, in reality
It should include the three-dimensional space of length, width and depth in production.
For the convenience of description, herein may use such as " under ", " lower section ", " being lower than ", " following ", " top ", "upper"
Deng spatial relationship word the relationships of an elements or features shown in the drawings and other elements or feature described.It will be understood that
Arrive, these spatial relationship words be intended to encompass in use or device in operation, other than the direction described in attached drawing
Other directions.In addition, when one layer be referred to as two layers " between " when, it can be only layer, Huo Zheye between described two layers
There may be one or more intervenient layers.
In the context of this application, described fisrt feature second feature " on " structure may include first
Be formed as the embodiment directly contacted with second feature, also may include that other feature is formed between the first and second features
Embodiment, such first and second feature may not be direct contact.
It should be noted that the basic conception that only the invention is illustrated in a schematic way is illustrated provided in the present embodiment,
Then only shown in diagram with it is of the invention in related component rather than component count, shape and size when according to actual implementation draw
System, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its assembly layout kenel can also
It can be increasingly complex.
As shown in Fig. 1~Figure 19, the present embodiment provides a kind of packaging method of antenna, the packaging method includes following step
It is rapid:
As shown in Figure 1, carrying out step 1) first, a support substrate 101 is provided, is formed and is divided in Yu Suoshu support substrate 101
Absciss layer 102.
As an example, the support substrate 101 include glass substrate, metal substrate, semiconductor substrate, polymer substrate and
One of ceramic substrate.In the present embodiment, it is glass substrate, the glass substrate cost that the support substrate 101, which is selected,
It is lower, it is easy to be formed on its surface separating layer 102, and the difficulty of subsequent stripping technology can be reduced.
As an example, the separating layer 102 includes photothermal transformation layer (LTHC), the support is formed in by spin coating proceeding
After in substrate 101, its curing molding is made by curing process.Photothermal transformation layer (LTHC) performance is stablized, and surface is more smooth, favorably
In the production of subsequent re-wiring layer, also, in subsequent stripping technology, the difficulty of removing is lower.
As shown in Fig. 2~Fig. 5, step 2) is then carried out, forms re-wiring layer in Yu Suoshu separating layer 102, it is described heavy
New route layer includes the first face connecting with the separating layer 102 and the second opposite face.
Step 2) make the re-wiring layer comprising steps of
As shown in Fig. 2, carrying out step 2-1), using chemical vapor deposition process or physical gas-phase deposition in described point
102 surface of absciss layer formed first medium layer 201, the material of the first medium layer 201 include epoxy resin, silica gel, PI, PBO,
BCB, silica, phosphorosilicate glass, the combination of one or more of fluorine-containing glass.
For example, the material selection of the first medium layer 201 be PI (polyimides), with further decrease technology difficulty with
And process costs.
As shown in figure 3, carrying out step 2-2), seed layer is formed in 201 surface of first medium layer using sputtering technology,
In forming the first metal layer in the seed layer, and the first metal layer and the seed layer are performed etching to be formed it is graphical
The first metal wiring layer 202.The material of the seed layer includes the lamination of titanium layer and layers of copper.First metal wiring layer
202 material includes the combination of one or more of copper, aluminium, nickel, gold, silver, titanium.
As shown in figure 4, carrying out step 2-3), using chemical vapor deposition process or physical gas-phase deposition in the figure
202 surface of the first metal wiring layer of shape forms second dielectric layer 203, and performs etching shape to the second dielectric layer 203
At the second dielectric layer 203 with graphical through-hole.The material of the second dielectric layer 203 include epoxy resin, silica gel, PI,
PBO, BCB, silica, phosphorosilicate glass, the combination of one or more of fluorine-containing glass.
For example, the material selection of the second dielectric layer 203 be PI (polyimides), with further decrease technology difficulty with
And process costs.
As shown in figure 4, carrying out step 2-4), in filling conductive plug in the graphical through-hole, then using sputtering work
Skill forms second metal layer in 203 surface of second dielectric layer, and performs etching to the metal layer and to form patterned the
Two metal wiring layers 204.The material of second metal wiring layer 204 includes one of copper, aluminium, nickel, gold, silver, titanium or two
Kind combination of the above.
Then, as shown in figure 5, above-mentioned steps 2-3 can be repeated)~step 2-4), there is multiple-level stack to be formed
The re-wiring layer of structure, to realize different wiring functions.
As shown in Fig. 6~Fig. 7, step 3) is then carried out, is formed on the second face of Yu Suoshu re-wiring layer patterned
Lower metal layer 301, using routing technique or electroplating technology or chemical plating process in forming metal feeder on the lower metal layer 301
Column 302, the metal feeder column 302 are electrically connected with the re-wiring layer, the metal feeder column 302 and the rewiring
Layer surface is generally perpendicular.
The lower metal layer 301 includes the Ni layers of lamination formed with Au layers.In the present embodiment, using routing technique
Metal feeder column 302, the material packet of the metal feeder column 302 are formed on (wire bonding) Yu Suoshu lower metal layer 301
Include one of Au, Ag, Cu, Al.The lower metal layer 301 can effectively reinforce metal feeder column 302 and the rewiring
The bond strength of layer reduces contact resistance.
As shown in Fig. 8~Fig. 9, step 4) is then carried out, the metal feeder column 302 is encapsulated using the first encapsulated layer 303,
First encapsulated layer 303 is thinned, so that the top surface of the metal feeder column 302 is exposed to first encapsulated layer 303.
As an example, including compression forming using the method that the first encapsulated layer 303 encapsulates the metal feeder column 302, passing
Pass one of molded, fluid-tight molding, vacuum lamination and spin coating, the material of first encapsulated layer 303 include silica gel with
And one of epoxy resin.
As shown in Figure 10, step 5) is then carried out, 303 surface of the first encapsulated layer of Yu Suoshu forms first antenna metal layer
304, the first antenna metal layer 304 is connect with the metal feeder column 302.
The material of the first antenna metal layer 304 can be copper etc..
As shown in figure 11, step 6) is then carried out, the protection adhesion layer for covering the first antenna metal layer 304 is formed
305。
For example, the material of the protection adhesion layer 305 includes polyimides.Due to quilt between two layers adjacent of antenna structure
One layer of antenna metal interlayer is every being easy to cause adhesion strength between two layers of antenna structure to reduce and cause to shift or rupture.This
Protection adhesion layer 305 is arranged in invention between two layers adjacent of antenna structure, on the one hand can protect to antenna metal, another
Aspect can be improved the adhesion property between adjacent two layers antenna structure, improve the Mechanical Structure Strength of antenna.
As shown in figure 12, step 7) is then carried out, in forming the second encapsulated layer 306 on the protection adhesion layer 305.
As an example, the method for forming second encapsulated layer 306 include compression forming, Transfer molding, fluid-tight at
One of type, vacuum lamination and spin coating, the material of second encapsulated layer 306 include one in silica gel and epoxy resin
Kind.
As shown in figure 13, step 8) is then carried out, forms the second antenna metal layer 307 on the second encapsulated layer of Yu Suoshu 306.
The material of the second antenna metal layer 307 can for copper etc., the second antenna metal layer 307 can with it is described
First antenna metal layer 304 or the re-wiring layer are electrically connected.
The present invention can obtain the antenna structure layer of multilayered structure, and stacked antenna structure has certain loss, and can have
Effect shortens conducting path between component, has better electrical property and antenna performance, while having lower power consumption.
As shown in figure 14, step 9) is then carried out, the re-wiring layer and the branch are removed based on the separating layer 102
The first face of the re-wiring layer is exposed at support group bottom 101.
Specifically, the separating layer 102 includes photothermal transformation layer, uses photothermal transformation layer described in laser irradiation herein, with
It separates the photothermal transformation layer with the re-wiring layer and the support substrate 101, and then removes the re-wiring layer
And the support substrate 101.
As shown in figure 15, step 10) is then carried out, forms connecting hole 308, the connecting hole in Yu Suoshu re-wiring layer
308 appear the metal wiring layer in the re-wiring layer.
As shown in figure 16, step 11) is then carried out, antenna circuit chip 401 is provided, by the antenna circuit chip 401
It is electrically adhered to the first face of the re-wiring layer, the electrode of the antenna circuit chip 401 deviates from the re-wiring layer,
The electrode is connected to the metal wiring layer by metal connecting line 402, so that the antenna circuit chip 401 is described in
Re-wiring layer and the metal feeder column 302 and the first antenna metal layer 304 are electrically connected.For example, can pass through
The antenna circuit chip 401 is connected the first face as the re-wiring layer by routing technique (wire bonding).
For example, the antenna circuit chip 401 be it is multiple, the antenna circuit chip 401 includes driving component and passive
One or both of component, wherein the driving component includes one in electric power management circuit, transmit circuit and reception circuit
Kind, the passive component includes one of resistance, capacitor and inductance.The present invention can pass through the route of different re-wiring layers
All driving components or passive component are integrated in an encapsulating structure by arrangement, can effectively reduce package dimension.
As shown in figure 17, then carry out step 12), using third encapsulated layer 403 encapsulate the antenna circuit chip 401,
The metal connecting line 402 and the connecting hole 308.Further to the antenna circuit chip 401 and the metal connecting line 402
It is protected.Antenna circuit chip and metal connecting line are protected using encapsulated layer in the back side of the present invention, can effectively improve encapsulation
The stability of structure.
For example, the method for forming the third encapsulated layer 403 include compression forming, it is Transfer molding, fluid-tight molding, true
One of dead level pressure and spin coating, the material of the third encapsulated layer 403 includes one of silica gel and epoxy resin.
As shown in Figure 18~Figure 19, step 13), Yu Suoshu third encapsulated layer 403 and the re-wiring layer are then carried out
Middle formation aperture 404 forms metal coupling 501 in Yu Suoshu aperture 404, to realize that the electrical of the re-wiring layer is drawn.
The metal coupling 501 can be one of tin solder, silver solder and gold-tin eutectic solder.
As shown in figure 19, the present embodiment also provides a kind of antenna packages structure, and the antenna packages structure can be applied to
In such as electronic equipment comprising 5G network, the encapsulating structure includes: re-wiring layer, and the re-wiring layer includes the first face
And the second opposite face；Metal feeder column 302 is formed on the second face of the re-wiring layer；First encapsulated layer 303,
The metal feeder column 302 is coated, and its top surface appears the metal feeder column 302；First antenna metal layer 304, is formed in
On first encapsulated layer, the antenna metal layer is connect with the metal feeder column 302；Adhesion layer 305 is protected, institute is covered in
It states on first antenna metal layer 304；Second encapsulated layer 306 is covered on the protection adhesion layer 305；Second antenna metal layer
307, it is formed on second encapsulated layer 306；At least one antenna circuit chip 401, is adhered to the re-wiring layer
First face, the electrode of the antenna circuit chip 401 deviate from the re-wiring layer, are formed with connection in the re-wiring layer
Hole 308, the connecting hole 308 appear the metal wiring layer in the re-wiring layer, and the electrode will by metal connecting line 402
The electrode is connected to the metal wiring layer；Third encapsulated layer 403 is covered in the antenna circuit chip 401, the metal
Line 402 and connecting hole 308 have aperture 404 in the third encapsulated layer 403 and the re-wiring layer；Metal coupling
501, it is formed in the aperture 404 and is electrically connected with the re-wiring layer, to realize the electrical property of the re-wiring layer
It draws.
The material of the protection adhesion layer 305 includes polyimides.The present invention is set between two layers adjacent of antenna structure
Set protection adhesion layer 305, on the one hand antenna metal can be protected, on the other hand can be improved adjacent two layers antenna structure it
Between adhesion property, improve the Mechanical Structure Strength of antenna.
The interconnecting piece of the metal feeder column 302 and the re-wiring layer has lower metal layer 301, the metal feeder
The material of column 302 includes one of Au, Ag, Cu, Al, and the material of the lower metal layer 301 includes Ni layers and forms with Au layers
Lamination.The lower metal layer 301 can effectively reinforce the bond strength of metal feeder column 302 Yu the re-wiring layer, reduce
Contact resistance.
The material of first encapsulated layer 303, the second encapsulated layer 306 and third encapsulated layer 403 includes silica gel and epoxy
One of resin.
The antenna circuit chip 401 be it is multiple, the antenna circuit chip 401 includes in driving component and passive component
One kind, wherein the driving component includes electric power management circuit, transmit circuit and receives one of circuit, described passive
Component includes one of resistance, capacitor and inductance.It is also filled up between the antenna circuit chip 401 and the re-wiring layer
Seal protection layer 402.
As described above, antenna packages structure of the invention and packaging method, have the advantages that
All driving components or passive component can be integrated in by the present invention by the trace arrangements of different re-wiring layers
In one encapsulating structure, package dimension can be effectively reduced.
The structure settings such as antenna circuit chip, re-wiring layer and antenna metal of the invention are homeotropic texture, can
It effectively shortens conducting path between component, has better electrical property and antenna performance, while there is lower power consumption.
Protection adhesion layer is arranged in the present invention between two layers adjacent of antenna structure, on the one hand can protect to antenna metal
Shield, on the other hand can be improved the adhesion property between adjacent two layers antenna structure, improves the Mechanical Structure Strength of antenna.
Antenna circuit chip and metal connecting line are protected using encapsulated layer in the back side of the present invention, can effectively improve encapsulation knot
The stability of structure.
The present invention uses fan-out package method encapsulating antenna structure, encapsulation volume can be effectively reduced, so that antenna packages
Structure integrated level with higher and better encapsulation performance, are with a wide range of applications in field of semiconductor package.
So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (18)
1. a kind of antenna packages structure, which is characterized in that the encapsulating structure includes:
Re-wiring layer, the re-wiring layer include the first face and the second opposite face；
Metal feeder column is formed on the second face of the re-wiring layer；
First encapsulated layer coats the metal feeder column, and its top surface appears the metal feeder column；
First antenna metal layer is formed on first encapsulated layer, and the antenna metal layer is connect with the metal feeder column；
Adhesion layer is protected, is covered on the first antenna metal layer；
Second encapsulated layer is covered on the protection adhesion layer；
Second antenna metal layer is formed on second encapsulated layer；
At least one antenna circuit chip is adhered to the first face of the re-wiring layer, the electrode of the antenna circuit chip
Away from the re-wiring layer, connecting hole is formed in the re-wiring layer, the connecting hole appears the re-wiring layer
In metal wiring layer, the electrode is connected to the metal wiring layer by metal connecting line by the electrode；
Third encapsulated layer is covered in the antenna circuit chip, the metal connecting line and connecting hole, the third encapsulated layer and institute
Stating has aperture in re-wiring layer；
Metal coupling is formed in the aperture and is electrically connected with the re-wiring layer, to realize the re-wiring layer
Electrical draw.
2. antenna packages structure according to claim 1, it is characterised in that: the material of the protection adhesion layer includes polyamides
Imines.
3. antenna packages structure according to claim 1, it is characterised in that: the metal feeder column and the rewiring
The interconnecting piece of layer has lower metal layer, and the material of the metal feeder column includes one of Au, Ag, Cu, Al, the lower metal
The material of layer includes the Ni layers of lamination formed with Au layers.
4. antenna packages structure according to claim 1, it is characterised in that: first encapsulated layer, the second encapsulated layer and
The material of third encapsulated layer includes one of silica gel and epoxy resin.
5. antenna packages structure described in claim 1, it is characterised in that: the antenna circuit chip is multiple, the antenna
Circuit chip includes one of driving component and passive component, wherein the driving component includes electric power management circuit, transmitting
One of circuit and reception circuit, the passive component includes one of resistance, capacitor and inductance.
6. antenna packages structure according to claim 1, it is characterised in that: the antenna circuit chip and the cloth again
Seal protection layer is also filled up between line layer.
7. a kind of packaging method of antenna, which is characterized in that the packaging method comprising steps of
1) support substrate is provided, forms separating layer in Yu Suoshu support substrate；
2) re-wiring layer is formed in Yu Suoshu separating layer, the re-wiring layer includes the first face connecting with the separating layer
And the second opposite face；
3) metal feeder column is formed on the second face of Yu Suoshu re-wiring layer；
4) the metal feeder column is encapsulated using the first encapsulated layer, first encapsulated layer is thinned, so that the metal feeder column
Top surface be exposed to first encapsulated layer；
5) first antenna metal layer, the first antenna metal layer and the metal feeder column are formed on the first encapsulated layer of Yu Suoshu
Connection；
6) the protection adhesion layer for covering the first antenna metal layer is formed；
7) in forming the second encapsulated layer on the protection adhesion layer；
8) the second antenna metal layer is formed on the second encapsulated layer of Yu Suoshu；
9) re-wiring layer and the support substrate are removed based on the separating layer, exposes the first of the re-wiring layer
Face；
10) connecting hole is formed in Yu Suoshu re-wiring layer, the connecting hole appears the metal line in the re-wiring layer
Layer；
11) antenna circuit chip is provided, by the antenna circuit adhesive die attachment in the first face of the re-wiring layer, the day
The electrode of line circuit chip deviates from the re-wiring layer, and the electrode is connected to the metal line by metal connecting line
Layer；
12) the antenna circuit chip, the metal connecting line and the connecting hole are encapsulated using third encapsulated layer；
13) aperture is formed in Yu Suoshu third encapsulated layer and the re-wiring layer, forms metal coupling in Yu Suoshu aperture, with
Realize that the electrical of the re-wiring layer is drawn.
8. the packaging method of antenna according to claim 7, it is characterised in that: the support substrate include glass substrate,
One of metal substrate, semiconductor substrate, polymer substrate and ceramic substrate.
9. the packaging method of antenna according to claim 7, it is characterised in that: the separating layer includes photothermal transformation layer,
Step 9) is using photothermal transformation layer described in laser irradiation, so that the photothermal transformation layer and the re-wiring layer and the support
Substrate separation, and then remove the re-wiring layer and the support substrate.
10. the packaging method of antenna according to claim 7, it is characterised in that: step 2) makes the re-wiring layer
Comprising steps of
2-1) first medium layer is formed in the separation layer surface；
Seed layer 2-2) is formed in the first medium layer surface using sputtering technology, forms the first metal in Yu Suoshu seed layer
Layer, and the first metal layer and the seed layer are performed etching to form patterned first metal wiring layer；
Second dielectric layer 2-3) is formed in the patterned first metal line layer surface, and the second dielectric layer is carried out
Etching forms the second dielectric layer with graphical through-hole；
2-4) in filling conductive plug in the graphical through-hole, then using sputtering technology in the second medium layer surface shape
It performs etching to form patterned second metal wiring layer at second metal layer, and to the metal layer.
11. the packaging method of antenna according to claim 10, it is characterised in that: further comprise the steps of: and repeat step
2-3)~step 2-4), to form the re-wiring layer with multilayer lamination structure.
12. the packaging method of antenna according to claim 7, it is characterised in that: it is described protection adhesion layer material include
Polyimides.
13. the packaging method of antenna according to claim 7, it is characterised in that: the second face of Yu Suoshu re-wiring layer
Upper formation metal feeder column comprising steps of
In forming lower metal layer on the re-wiring layer；
Using routing technique or electroplating technology or chemical plating process in formation metal feeder column on the lower metal layer.
14. the packaging method of antenna according to claim 13, it is characterised in that: the lower metal layer includes Ni layers and Au
The lamination of layer composition.
15. the packaging method of antenna according to claim 7, it is characterised in that: step 11) will be described using routing technique
Electrode is connected to the metal wiring layer.
16. the packaging method of antenna according to claim 7, it is characterised in that: the material of the metal feeder column includes
One of Au, Ag, Cu, Al.
17. the packaging method of antenna according to claim 7, it is characterised in that: form first encapsulated layer, the second envelope
The method of dress layer and third encapsulated layer includes one in compression forming, Transfer molding, fluid-tight molding, vacuum lamination and spin coating
Kind, the material of first encapsulated layer, the second encapsulated layer and third encapsulated layer includes one of silica gel and epoxy resin.
18. the packaging method of antenna according to claim 7, it is characterised in that: the antenna circuit chip is multiple, institute
Stating antenna circuit chip includes one of driving component and passive component, wherein the driving component includes power management electricity
One of road, transmit circuit and reception circuit, the passive component includes one of resistance, capacitor and inductance.
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| CN201910433159.5A CN110060983A (en) | 2019-05-23 | 2019-05-23 | Antenna packages structure and packaging method |
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Cited By (1)
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|---|---|---|---|---|
| WO2021246553A1 (en) * | 2020-06-01 | 2021-12-09 | 주식회사 이피지 | Multi-array stacked antenna to which anodic bonding is applied |
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