CN110058111A - T-type three-level inverter method for diagnosing faults based on phase voltage residual error - Google Patents
T-type three-level inverter method for diagnosing faults based on phase voltage residual error Download PDFInfo
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- CN110058111A CN110058111A CN201910321522.4A CN201910321522A CN110058111A CN 110058111 A CN110058111 A CN 110058111A CN 201910321522 A CN201910321522 A CN 201910321522A CN 110058111 A CN110058111 A CN 110058111A
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Abstract
The invention discloses a kind of T-type three-level inverter method for diagnosing faults based on phase voltage residual error, first obtains the three-phase voltage of the T-type three-level inverter to fault diagnosis, and processing is filtered and zoomed in or out to three-phase voltage；The residual error voltage of voltage after calculating every phase reference voltage and every phase processor；Judge whether every circuitry phase breaks down according to the sample voltage value in every phase residual error voltage；Under the premise of breaking down, the average value and positive and negative peak to peak value of the residual error voltage in a time cycle that the sampling instant by calculating the sample voltage value for being abnormal variation starts；Determine that open-circuit fault has occurred in which specific device further according to average value and positive and negative peak to peak value；Advantage is that it need to only obtain three phase voltages, the raw information of fault diagnosis is fewer, and fault diagnosis is at low cost, and fault diagnosis accuracy rate is high, fault diagnosis result energy automatic and accurate navigates to specific device, so as to effectively improve the functional reliability of T-type three-level inverter.
Description
Technical field
The present invention relates to a kind of fault of converter detection techniques, more particularly, to a kind of T-type three based on phase voltage residual error
Electrical level inverter method for diagnosing faults.
Background technique
Multi-electrical level inverter has been increasingly being applied to the power occasion of wide scope.Relative to two traditional level inverse conversions
Device, multi-electrical level inverter can obtain more level, have less harmonic wave, and can reduce device and want to voltage stress
It asks.In recent years, scholar proposes a kind of referred to as T-type neutral-point-clamped three-level inverter (T-type neutral-point-
Clamped inverter, hereinafter referred T-type three-level inverter or TNPC) topological structure, which are mainly applied to the sun
The high efficiency occasions such as energy, electric car inverter.In circuit operational process, because of reasons such as overload, temperature rise, non-standard operations,
It will lead to circuit and various failures occur, wherein the failure of semiconductor switch device is one of the most common type.Due to multi-level inverse conversion
Semiconductor switch device in device can increase as output-voltage levels increase, as long as in these semiconductor switch devices wherein
One failure, then entire multi-electrical level inverter will fail or even cause serious consequence, therefore, to multi-level inverse conversion
Device, which carries out fault diagnosis research, to be necessary.
Currently, having carried out many researchs for the troubleshooting issue of T-type three-level inverter both at home and abroad.Such as: Ui-
Min Choi, Kyo-Beum Lee, Frede Blaabjerg et al. are in IEEE Transactions on Industry
The Diagnosis and tolerant strategy of an delivered in Applications (IEEE industrial application journal)
Open-switch fault for T-type three-level inverter systems (T-type Three-Level Inverter System
The diagnosis of open-circuit fault and fault-tolerant strategy) (2014,50 (1): 495-508), propose a kind of switching tube open-circuit fault diagnosis side
Method acquires three phase currents, and calculates separately the polarity of the average value of three phase currents, then judges input direct-current midpoint electricity
The polarity of pressure can determine which switching device is opened in circuit according to phase current and the polar various combination of mid-point voltage
Road failure.This method does not need complicated algorithm, has the advantages that high reliablity.But this method should detection circuit electricity
It flows, again the voltage of detection circuit, the fault signature type for needing to choose in failure diagnostic process is relatively more, in actual implementation
Higher cost is diagnosed, the hardware circuit of diagnostic system is more complicated.
For another example: V.Fernao Pires, D.Foito, Tito G.Amaral et al. are published in 2015International
Conference on Renewable Energy Research and Applications (renewable energy research in 2015
With apply international conference) on article Fault detection and diagnosis in a PV grid-connected
T-type three level inverter (fault detection and diagnosis of grid-connected T-type three-level inverter) (2015:
933-937), a kind of switching device open-circuit fault diagnostic method for being based on histogram (histogram) is proposed, is detected first
The phase voltage of three output, is then come out each level of phase voltage by certain algorithm using histogram graph representation, then
The algorithm for calculating center of gravity by one comes out the center of gravity calculation of histogram, further according to the difference for the center-of-gravity value calculated, sentences
Disconnected is that failure has occurred in which switching device.This method only needs to detect three current signals, not affected by a load, remaining
It is all the software algorithm or relatively complicated completed, but proposed to be calculated by software, and software systems must increase
Hardware circuit including adding including single-chip minimum system etc..
For another example: Jiangbiao He, Nabeel A.O.Demerdash, Nathan Weise, Ramin Katebi et al.
The A Fast delivered in IEEE Transactions on Industry Applications (IEEE industrial application journal)
On-Line Diagnostic Method for Open-Circuit Switch Faults in SiC-MOSFET-Based
T-Type Multilevel Inverters (the T-type multi-electrical level inverter open-circuit fault based on SiC-MOSFET it is quick online
Diagnostic method) (2017,53 (3): 2948-2958.), which describe one kind for detecting event of opening a way in T-type multi-level converter
The online non-invasive diagnosing method of barrier, this method detect the anomalous variation of DC bus neutral point current first, then detect
Three-phase current signal, and the information such as circuit switch state for combining detection moment, judge which switching device goes out in current circuit
Open-circuit fault is showed.This method has very high reliability, but this method will not only detect direct current midpoint electric current and three-phase electricity
Stream, but also the switch state in circuit is obtained, the raw information demand of fault diagnosis is relatively more.
Summary of the invention
The T-type three-level inverter failure based on phase voltage residual error that technical problem to be solved by the invention is to provide a kind of
Diagnostic method need to only obtain three phase voltages, and the raw information demand of fault diagnosis is fewer, and fault diagnosis is at low cost,
Fault diagnosis accuracy rate is high, fault diagnosis result can automatic and accurate navigate to specific device, so as to effectively improve T
The functional reliability of type three-level inverter.
The technical scheme of the invention to solve the technical problem is: a kind of three electricity of T-type based on phase voltage residual error
Flat fault of converter diagnostic method, it is characterised in that the following steps are included:
Step 1: building a T-type three-level inverter, which is three electricity of T-type that can be worked normally
Flat inverter or to have joined a kind of T-type three-level inverter of open-circuit fault；Wherein, added open-circuit fault is 12 kinds
One of open-circuit fault, the 1st kind of open-circuit fault~12nd kind open-circuit fault correspond to the first insulated gate bipolar crystal of a phase
Pipe Sa1, a phase the second insulated gate bipolar transistor Sa2, a phase third insulated gate bipolar transistor Sa3, a phase the 4th absolutely
Edge grid bipolar junction transistor Sa4, b phase the first insulated gate bipolar transistor Sb1, b phase the second insulated gate bipolar transistor
Sb2, b phase third insulated gate bipolar transistor Sb3, b phase the 4th insulated gate bipolar transistor Sb4, c phase first insulation
Grid bipolar junction transistor Sc1, c phase the second insulated gate bipolar transistor Sc2, c phase third insulated gate bipolar transistor
Sc3, c phase the 4th insulated gate bipolar transistor Sc4Open-circuit fault occurs；
Step 2: obtaining a phase voltage, b phase voltage and c phase voltage of the T-type three-level inverter, and correspondence is denoted as Uan、Ubn
And Ucn；Then to UanIt is filtered to remove high-frequency noise, the voltage after removal high-frequency noise is denoted as U'an；Equally,
To UbnIt is filtered to remove high-frequency noise, the voltage after removal high-frequency noise is denoted as U'bn；To UcnIt is filtered place
Reason is denoted as U' to remove high-frequency noise, by the voltage after removal high-frequency noisecn；Again with a phase reference voltage UrefaOn the basis of, it is right
U'anProcessing is zoomed in or out, zooming in or out that treated, voltage is denoted as U "an；Equally, with b phase reference voltage Urefb
On the basis of, to U'bnProcessing is zoomed in or out, zooming in or out that treated, voltage is denoted as U "bn；With c phase reference voltage
UrefcOn the basis of, to U'cnProcessing is zoomed in or out, zooming in or out that treated, voltage is denoted as U "cn；Wherein, Uan、
Ubn、Ucn、U'an、U'bn、U'cn、U”an、U”bn、U”cn、Urefa、Urefb、UrefcUnit be volt；
Step 3: a phase residual error voltage of the T-type three-level inverter is calculated, U is denoted ascca, Ucca=Urefa-U”an；Then
Judge UccaIn with the presence or absence of sample voltage value be greater than+2 volts or be less than -2 volts, and if it exists, then determine that three level of T-type is inverse
The a circuitry phase for becoming device breaks down, then executes step 4；If it does not exist, then determine a circuitry phase of the T-type three-level inverter
It does not break down, then executes step 5；Wherein, UccaUnit be volt, obtain sample voltage value during setting sampling week
Phase is T', sampling number is Num；
Step 4: by UccaIn the 1st sampling instant for being greater than+2 volts or the sample voltage value less than -2 volts be used as
Begin the moment；Then from UccaThe middle voltage for extracting the time cycle that initial time starts, is denoted as U'cca；Then U' is calculatedcca
Average value and U'ccaPositive and negative peak to peak value, correspondence be denoted as Ua,aveAnd Ua,PN,Ua,PN=| | Ua,pos
|-|Ua,neg||；Further according to Ua,aveAnd Ua,PNDetermine the insulation that open-circuit fault occurs in a circuitry phase of the T-type three-level inverter
Grid bipolar junction transistor, if Ua,ave> 0 and Ua,PN> Vth, then determine the first insulated gate of a phase in the T-type three-level inverter
Bipolar junction transistor Sa1Open-circuit fault occurs, fault diagnosis terminates；If Ua,ave> 0 and Ua,PN< Vth, then determine three electricity of T-type
Second insulated gate bipolar transistor S of a phase in flat invertera2Open-circuit fault occurs, fault diagnosis terminates；If Ua,ave< 0
And Ua,PN> Vth, then determine the third insulated gate bipolar transistor S of a phase in the T-type three-level invertera3Open circuit event occurs
Barrier, fault diagnosis terminate；If Ua,ave< 0 and Ua,PN< Vth, then determine the 4th insulation of a phase in the T-type three-level inverter
Grid bipolar junction transistor Sa4Open-circuit fault occurs, fault diagnosis terminates；Wherein, T " indicates a time cycle, and T " is identical as T',
U'cca、Ua,ave、Ua,PN、Ua,pos、Ua,negUnit be volt, t is time integral variable, and symbol " | | " is the symbol that takes absolute value
Number, Ua,posIndicate U'ccaPositive peak, Ua,negIndicate U'ccaNegative peak, VthFor the voltage threshold of setting, VthUnit be volt
It is special；
Step 5: the b phase residual error voltage of the T-type three-level inverter is calculated, U is denoted asccb, Uccb=Urefb-U”bn；Then
Judge UccbIn with the presence or absence of sample voltage value be greater than+2 volts or be less than -2 volts, and if it exists, then determine that three level of T-type is inverse
The b circuitry phase for becoming device breaks down, then executes step 6；If it does not exist, then determine the b circuitry phase of the T-type three-level inverter
It does not break down, then executes step 7；Wherein, UccbUnit be volt, obtain sample voltage value during setting sampling week
Phase is T', sampling number is Num；
Step 6: by UccbIn the 1st sampling instant for being greater than+2 volts or the sample voltage value less than -2 volts be used as
Begin the moment；Then from UccbThe middle voltage for extracting the time cycle that initial time starts, is denoted as U'ccb；Then U' is calculatedccb
Average value and U'ccbPositive and negative peak to peak value, correspondence be denoted as Ub,aveAnd Ub,PN,Ub,PN=| | Ub,pos
|-|Ub,neg||；Further according to Ub,aveAnd Ub,PNDetermine the insulation that open-circuit fault occurs in the b circuitry phase of the T-type three-level inverter
Grid bipolar junction transistor, if Ub,ave> 0 and Ub,PN> Vth, then determine the first insulated gate of the b phase in the T-type three-level inverter
Bipolar junction transistor Sb1Open-circuit fault occurs, fault diagnosis terminates；If Ub,ave> 0 and Ub,PN< Vth, then determine three electricity of T-type
Second insulated gate bipolar transistor S of the b phase in flat inverterb2Open-circuit fault occurs, fault diagnosis terminates；If Ub,ave< 0
And Ub,PN> Vth, then determine the third insulated gate bipolar transistor S of the b phase in the T-type three-level inverterb3Open circuit event occurs
Barrier, fault diagnosis terminate；If Ub,ave< 0 and Ub,PN< Vth, then determine the 4th insulation of the b phase in the T-type three-level inverter
Grid bipolar junction transistor Sb4Open-circuit fault occurs, fault diagnosis terminates；Wherein, T " indicates a time cycle, and T " is identical as T',
U'ccb、Ub,ave、Ub,PN、Ub,pos、Ub,negUnit be volt, t is time integral variable, and symbol " | | " is the symbol that takes absolute value
Number, Ub,posIndicate U'ccbPositive peak, Ub,negIndicate U'ccbNegative peak, VthFor the voltage threshold of setting, VthUnit be volt
It is special；
Step 7: the c phase residual error voltage of the T-type three-level inverter is calculated, U is denoted asccc, Uccc=Urefc-U”cn；Then
Judge UcccIn with the presence or absence of sample voltage value be greater than+2 volts or be less than -2 volts, and if it exists, then determine that three level of T-type is inverse
The c circuitry phase for becoming device breaks down, then executes step 8；If it does not exist, then determine the c circuitry phase of the T-type three-level inverter
It does not break down, then executes step 9；Wherein, UcccUnit be volt, obtain sample voltage value during setting sampling week
Phase is T', sampling number is Num；
Step 8: by UcccIn the 1st sampling instant for being greater than+2 volts or the sample voltage value less than -2 volts be used as
Begin the moment；Then from UcccThe middle voltage for extracting the time cycle that initial time starts, is denoted as U'ccc；Then U' is calculatedccc
Average value and U'cccPositive and negative peak to peak value, correspondence be denoted as Uc,aveAnd Uc,PN,Uc,PN=| | Uc,pos
|-|Uc,neg||；Further according to Uc,aveAnd Uc,PNDetermine the insulation that open-circuit fault occurs in the c circuitry phase of the T-type three-level inverter
Grid bipolar junction transistor, if Uc,ave> 0 and Uc,PN> Vth, then determine the first insulated gate of the c phase in the T-type three-level inverter
Bipolar junction transistor Sc1Open-circuit fault occurs, fault diagnosis terminates；If Uc,ave> 0 and Uc,PN< Vth, then determine three electricity of T-type
Second insulated gate bipolar transistor S of the c phase in flat inverterc2Open-circuit fault occurs, fault diagnosis terminates；If Uc,ave< 0
And Uc,PN> Vth, then determine the third insulated gate bipolar transistor S of the c phase in the T-type three-level inverterc3Open circuit event occurs
Barrier, fault diagnosis terminate；If Uc,ave< 0 and Uc,PN< Vth, then determine the 4th insulation of the c phase in the T-type three-level inverter
Grid bipolar junction transistor Sc4Open-circuit fault occurs, fault diagnosis terminates；Wherein, T " indicates a time cycle, and T " is identical as T',
U'ccc、Uc,ave、Uc,PN、Uc,pos、Uc,negUnit be volt, t is time integral variable, and symbol " | | " is the symbol that takes absolute value
Number, Uc,posIndicate U'cccPositive peak, Uc,negIndicate U'cccNegative peak, VthFor the voltage threshold of setting, VthUnit be volt
It is special；
Step 9: continue to carry out fault diagnosis to the T-type three-level inverter.
In the step two, the method used is filtered as low-pass filtering method.
In the step two, zoom in or out the determination process of the ratio of processing are as follows: the T-type three-level inverter just
Often in the case where work, a phase voltage, b phase voltage and the c phase voltage under working normally are obtained, correspondence is denoted as Unormal-an、
Unormal-bnAnd Unormal-cn；Then by Unormal-anPeak value and UrefaPeak value ratio as U'anZoom in or out processing
Ratio, by Unormal-bnPeak value and UrefbPeak value ratio as U'bnThe ratio for zooming in or out processing, by Unormal-cn's
Peak value and UrefcPeak value ratio as U'cnZoom in or out the ratio of processing；Wherein, Unormal-an、Unormal-bnWith
Unormal-cnUnit be volt.
Compared with the prior art, the advantages of the present invention are as follows:
1) the method for the present invention only needs to sample three-phase voltage i.e. a phase voltage, b phase voltage and the c phase of T-type three-level inverter
Voltage, the voltage for then obtaining every phase reference voltage and every phase phase voltage after being filtered and zooming in or out processing into
Row compares, and obtains residual error voltage, then analyze residual error voltage, judges have in T-type three-level inverter based on the analysis results
Open-circuit fault has occurred in which device of body, due to need to only obtain three phase voltages, the raw information demand of fault diagnosis
It is fewer, and can be diagnosed to be that open-circuit fault has occurred in which specific device, not only fault diagnosis accuracy rate is high, but also
Reduce because open-circuit fault bring is lost, improves the functional reliability of T-type three-level inverter.
2) the method for the present invention only needs to increase by three voltage sensors when realizing, eliminates conventional fault diagnosis method institute
A large amount of voltages, the current sensor needed, reduces fault diagnosis cost.
3) the method for the present invention is simply easily realized, it is only necessary to be analyzed residual error voltage, be calculated a time cycle for having mutation
The average value of residual error voltage and positive and negative peak to peak value, so that it may obtain fault diagnosis result.
Detailed description of the invention
Fig. 1 is the main circuit of T-type three-level inverter；
Fig. 2 is that the overall of the method for the present invention realizes block diagram；
Fig. 3 is the signal schematic representation that the control system of T-type three-level inverter exports；
Fig. 4 a is a phase reference voltage U of the T-type three-level inverter under normal operationrefaWaveform diagram；
Fig. 4 b is a phase voltage U that obtains in T-type three-level inverter under normal operationanIt is filtered and is put
The big or voltage U " that reduces that treatedanWaveform diagram；
Fig. 4 c is a phase residual error voltage U of the T-type three-level inverter under normal operationccaWaveform diagram；
Fig. 5 a is a phase residual error voltage U that joined the T-type three-level inverter of the 1st kind of open-circuit faultccaWaveform diagram；
Fig. 5 b is a phase residual error voltage U that joined the T-type three-level inverter of the 2nd kind of open-circuit faultccaWaveform diagram；
Fig. 5 c is a phase residual error voltage U that joined the T-type three-level inverter of the 3rd kind of open-circuit faultccaWaveform diagram；
Fig. 5 d is a phase residual error voltage U that joined the T-type three-level inverter of the 4th kind of open-circuit faultccaWaveform diagram.
Specific embodiment
The present invention will be described in further detail below with reference to the embodiments of the drawings.
Fig. 1 gives the main circuit of T-type three-level inverter comprising the first device for power switching S of a phasea1, a phase
Second device for power switching Sa2, a phase third device for power switching Sa3, a phase the 4th device for power switching Sa4, b phase first
Device for power switching Sb1, b phase the second device for power switching Sb2, b phase third device for power switching Sb3, b phase the 4th power
Switching device Sb4, c phase the first device for power switching Sc1, c phase the second device for power switching Sc2, c phase third power switch
Device Sc3, c phase the 4th device for power switching Sc4, a phase voltage is Uan(voltage in Fig. 1 between a point and n point), b phase voltage is
Ubn(voltage in Fig. 1 between b point and n point), c phase voltage are Ucn(voltage in Fig. 1 between c point and n point)；Above-mentioned 12 power is opened
Closing device is insulated gate bipolar transistor.If S in main circuit shown in FIG. 1a1、Sa2、Sa3、Sa4、Sb1、Sb2、Sb3、Sb4、
Sc1、Sc2、Sc3、Sc4In any one device for power switching occur open-circuit fault be a kind of fault type, then have 12 kinds of failure classes
Type can be such that main circuit can not work normally, the invention proposes a kind of three electricity of T-type thus regardless of which kind of fault type occurs
Flat fault of converter diagnostic method.
A kind of T-type three-level inverter method for diagnosing faults based on phase voltage residual error proposed by the present invention, it is overall real
Existing block diagram as shown in Fig. 2, itself the following steps are included:
Step 1: a T-type three-level inverter is built using existing component, as shown in Figure 1, three level of T-type
Inverter is the T-type three-level inverter that can be worked normally or to have joined a kind of T-type three-level inverter of open-circuit fault；
Wherein, added open-circuit fault is one of 12 kinds of open-circuit faults, and the 1st kind of open-circuit fault~12nd kind open-circuit fault is corresponding
For the first insulated gate bipolar transistor S of a phasea1, a phase the second insulated gate bipolar transistor Sa2, a phase third insulation
Grid bipolar junction transistor Sa3, a phase the 4th insulated gate bipolar transistor Sa4, b phase the first insulated gate bipolar transistor
Sb1, b phase the second insulated gate bipolar transistor Sb2, b phase third insulated gate bipolar transistor Sb3, b phase the 4th insulation
Grid bipolar junction transistor Sb4, c phase the first insulated gate bipolar transistor Sc1, c phase the second insulated gate bipolar transistor
Sc2, c phase third insulated gate bipolar transistor Sc3, c phase the 4th insulated gate bipolar transistor Sc4Open-circuit fault occurs.
Step 2: obtaining a phase voltage, b phase voltage and c phase voltage of the T-type three-level inverter, and correspondence is denoted as Uan、Ubn
And Ucn；Then to UanIt is filtered to remove high-frequency noise, the voltage after removal high-frequency noise is denoted as U'an；Equally,
To UbnIt is filtered to remove high-frequency noise, the voltage after removal high-frequency noise is denoted as U'bn；To UcnIt is filtered place
Reason is denoted as U' to remove high-frequency noise, by the voltage after removal high-frequency noisecn；Again with a phase reference voltage UrefaOn the basis of, it is right
U'anProcessing is zoomed in or out, zooming in or out that treated, voltage is denoted as U "an；Equally, with b phase reference voltage Urefb
On the basis of, to U'bnProcessing is zoomed in or out, zooming in or out that treated, voltage is denoted as U "bn；With c phase reference voltage
UrefcOn the basis of, to U'cnProcessing is zoomed in or out, zooming in or out that treated, voltage is denoted as U "cn；Wherein, Uan、
Ubn、Ucn、U'an、U'bn、U'cn、U”an、U”bn、U”cn、Urefa、Urefb、UrefcUnit be volt.
Here, Urefa、Urefb、UrefcIt is provided by DSP control system.Fig. 3 gives the control system of T-type three-level inverter
System, T-type three-level inverter is controlled by DSP control system, provides T-type three-level inverter by DSP control system
The various control signals worked normally, Urefa、Urefb、UrefcIt is directly exported by DSP control system, Uan、UbnAnd UcnBy three electricity
Pressure sensor is obtained from threephase load place of T-type three-level inverter respectively.
In the present embodiment, in step 2, the method used is filtered as low-pass filtering method；Zoom in or out processing
Ratio determination process are as follows: in the case where the T-type three-level inverter works normally, obtain that work normally lower a phase electric
Pressure, b phase voltage and c phase voltage, correspondence are denoted as Unormal-an、Unormal-bnAnd Unormal-cn；Then by Unormal-anPeak value with
UrefaPeak value ratio as U'anThe ratio for zooming in or out processing, by Unormal-bnPeak value and UrefbPeak value ratio
As U'bnThe ratio for zooming in or out processing, by Unormal-cnPeak value and UrefcPeak value ratio as U'cnAmplification or contracting
The ratio of small processing；Wherein, Unormal-an、Unormal-bnAnd Unormal-cnUnit be volt.
Step 3: a phase residual error voltage of the T-type three-level inverter is calculated, U is denoted ascca, Ucca=Urefa-U”an；Then
Judge UccaIn with the presence or absence of sample voltage value be greater than+2 volts or be less than -2 volts, and if it exists, then determine that three level of T-type is inverse
The a circuitry phase for becoming device breaks down, then executes step 4；If it does not exist, then determine a circuitry phase of the T-type three-level inverter
It does not break down, then executes step 5；Wherein, UccaUnit be volt, obtain sample voltage value during setting sampling week
Phase is T', sampling number is Num, takes T'=20 milliseconds in the present embodiment, takes Num=1000.
Fig. 4 a gives a phase reference voltage U of the T-type three-level inverter under normal operationrefaWaveform diagram, figure
4b gives a phase voltage U obtained in the T-type three-level inverter under normal operationanIt is filtered and amplifies or contract
Small treated voltage U "anWaveform diagram, Fig. 4 c gives a phase residual error of the T-type three-level inverter under normal operation
Voltage UccaWaveform diagram.From Fig. 4 c as can be seen that when T-type three-level inverter works normally, a phase residual error voltage UccaIt is several
It is equal to 0, the sample voltage value there is no being greater than+2 volts or less than -2 volts, therefore, it is determined that a phase of T-type three-level inverter
Circuit does not break down.
Fig. 5 a gives a phase residual error voltage U that joined the T-type three-level inverter of the 1st kind of open-circuit faultccaWave
Shape figure, Fig. 5 b give a phase residual error voltage U that joined the T-type three-level inverter of the 2nd kind of open-circuit faultccaWaveform
Figure, Fig. 5 c give a phase residual error voltage U that joined the T-type three-level inverter of the 3rd kind of open-circuit faultccaWaveform diagram,
Fig. 5 d gives a phase residual error voltage U that joined the T-type three-level inverter of the 4th kind of open-circuit faultccaWaveform diagram.From figure
It is greater than+2 volts or the sample voltage value less than -2 volts as can be seen that existing in 5a to Fig. 5 d, therefore, it is determined that three level of T-type
The a circuitry phase of inverter breaks down.
Step 4: by UccaIn the 1st sampling instant for being greater than+2 volts or the sample voltage value less than -2 volts be used as
Begin the moment；Then from UccaThe middle voltage for extracting the time cycle that initial time starts, is denoted as U'cca；Then U' is calculatedcca
Average value and U'ccaPositive and negative peak to peak value, correspondence be denoted as Ua,aveAnd Ua,PN,Ua,PN=| | Ua,pos
|-|Ua,neg||；Further according to Ua,aveAnd Ua,PNDetermine the insulation that open-circuit fault occurs in a circuitry phase of the T-type three-level inverter
Grid bipolar junction transistor, if Ua,ave> 0 and Ua,PN> Vth, then determine the first insulated gate of a phase in the T-type three-level inverter
Bipolar junction transistor Sa1Open-circuit fault occurs, fault diagnosis terminates；If Ua,ave> 0 and Ua,PN< Vth, then determine three electricity of T-type
Second insulated gate bipolar transistor S of a phase in flat invertera2Open-circuit fault occurs, fault diagnosis terminates；If Ua,ave< 0
And Ua,PN> Vth, then determine the third insulated gate bipolar transistor S of a phase in the T-type three-level invertera3Open circuit event occurs
Barrier, fault diagnosis terminate；If Ua,ave< 0 and Ua,PN< Vth, then determine the 4th insulation of a phase in the T-type three-level inverter
Grid bipolar junction transistor Sa4Open-circuit fault occurs, fault diagnosis terminates；Wherein, T " indicates a time cycle, and T " is identical as T',
U'cca、Ua,ave、Ua,PN、Ua,pos、Ua,negUnit be volt, t is time integral variable, and symbol " | | " is the symbol that takes absolute value
Number, Ua,posIndicate U'ccaPositive peak, Ua,negIndicate U'ccaNegative peak, VthFor the voltage threshold of setting, VthUnit be volt
Spy takes V in the present embodimentth=2.5 volts.
Step 5: the b phase residual error voltage of the T-type three-level inverter is calculated, U is denoted asccb, Uccb=Urefb-U”bn；Then
Judge UccbIn with the presence or absence of sample voltage value be greater than+2 volts or be less than -2 volts, and if it exists, then determine that three level of T-type is inverse
The b circuitry phase for becoming device breaks down, then executes step 6；If it does not exist, then determine the b circuitry phase of the T-type three-level inverter
It does not break down, then executes step 7；Wherein, UccbUnit be volt, obtain sample voltage value during setting sampling week
Phase is T', sampling number is Num, takes T'=20 milliseconds in the present embodiment, takes Num=1000.
Step 6: by UccbIn the 1st sampling instant for being greater than+2 volts or the sample voltage value less than -2 volts be used as
Begin the moment；Then from UccbThe middle voltage for extracting the time cycle that initial time starts, is denoted as U'ccb；Then U' is calculatedccb
Average value and U'ccbPositive and negative peak to peak value, correspondence be denoted as Ub,aveAnd Ub,PN,Ub,PN=| | Ub,pos
|-|Ub,neg||；Further according to Ub,aveAnd Ub,PNDetermine the insulation that open-circuit fault occurs in the b circuitry phase of the T-type three-level inverter
Grid bipolar junction transistor, if Ub,ave> 0 and Ub,PN> Vth, then determine the first insulated gate of the b phase in the T-type three-level inverter
Bipolar junction transistor Sb1Open-circuit fault occurs, fault diagnosis terminates；If Ub,ave> 0 and Ub,PN< Vth, then determine three electricity of T-type
Second insulated gate bipolar transistor S of the b phase in flat inverterb2Open-circuit fault occurs, fault diagnosis terminates；If Ub,ave< 0
And Ub,PN> Vth, then determine the third insulated gate bipolar transistor S of the b phase in the T-type three-level inverterb3Open circuit event occurs
Barrier, fault diagnosis terminate；If Ub,ave< 0 and Ub,PN< Vth, then determine the 4th insulation of the b phase in the T-type three-level inverter
Grid bipolar junction transistor Sb4Open-circuit fault occurs, fault diagnosis terminates；Wherein, T " indicates a time cycle, and T " is identical as T',
U'ccb、Ub,ave、Ub,PN、Ub,pos、Ub,negUnit be volt, t is time integral variable, and symbol " | | " is the symbol that takes absolute value
Number, Ub,posIndicate U'ccbPositive peak, Ub,negIndicate U'ccbNegative peak, VthFor the voltage threshold of setting, VthUnit be volt
Spy takes V in the present embodimentth=2.5 volts.
Step 7: the c phase residual error voltage of the T-type three-level inverter is calculated, U is denoted asccc, Uccc=Urefc-U”cn；Then
Judge UcccIn with the presence or absence of sample voltage value be greater than+2 volts or be less than -2 volts, and if it exists, then determine that three level of T-type is inverse
The c circuitry phase for becoming device breaks down, then executes step 8；If it does not exist, then determine the c circuitry phase of the T-type three-level inverter
It does not break down, then executes step 9；Wherein, UcccUnit be volt, obtain sample voltage value during setting sampling week
Phase is T', sampling number is Num, takes T'=20 milliseconds in the present embodiment, takes Num=1000.
Step 8: by UcccIn the 1st sampling instant for being greater than+2 volts or the sample voltage value less than -2 volts be used as
Begin the moment；Then from UcccThe middle voltage for extracting the time cycle that initial time starts, is denoted as U'ccc；Then U' is calculatedccc
Average value and U'cccPositive and negative peak to peak value, correspondence be denoted as Uc,aveAnd Uc,PN,Uc,PN=| | Uc,pos
|-|Uc,neg||；Further according to Uc,aveAnd Uc,PNDetermine the insulation that open-circuit fault occurs in the c circuitry phase of the T-type three-level inverter
Grid bipolar junction transistor, if Uc,ave> 0 and Uc,PN> Vth, then determine the first insulated gate of the c phase in the T-type three-level inverter
Bipolar junction transistor Sc1Open-circuit fault occurs, fault diagnosis terminates；If Uc,ave> 0 and Uc,PN< Vth, then determine three electricity of T-type
Second insulated gate bipolar transistor S of the c phase in flat inverterc2Open-circuit fault occurs, fault diagnosis terminates；If Uc,ave< 0
And Uc,PN> Vth, then determine the third insulated gate bipolar transistor S of the c phase in the T-type three-level inverterc3Open circuit event occurs
Barrier, fault diagnosis terminate；If Uc,ave< 0 and Uc,PN< Vth, then determine the 4th insulation of the c phase in the T-type three-level inverter
Grid bipolar junction transistor Sc4Open-circuit fault occurs, fault diagnosis terminates；Wherein, T " indicates a time cycle, and T " is identical as T',
U'ccc、Uc,ave、Uc,PN、Uc,pos、Uc,negUnit be volt, t is time integral variable, and symbol " | | " is the symbol that takes absolute value
Number, Uc,posIndicate U'cccPositive peak, Uc,negIndicate U'cccNegative peak, VthFor the voltage threshold of setting, VthUnit be volt
Spy takes V in the present embodimentth=2.5 volts.
Step 9: continue to carry out fault diagnosis to the T-type three-level inverter.
Claims (3)
1. a kind of T-type three-level inverter method for diagnosing faults based on phase voltage residual error, it is characterised in that the following steps are included:
Step 1: building a T-type three-level inverter, which is that three level of T-type that can work normally is inverse
Become device or to have joined a kind of T-type three-level inverter of open-circuit fault；Wherein, added open-circuit fault is 12 kinds of open circuits
One of failure, the 1st kind of open-circuit fault~12nd kind open-circuit fault correspond to the first insulated gate bipolar transistor of a phase
Sa1, a phase the second insulated gate bipolar transistor Sa2, a phase third insulated gate bipolar transistor Sa3, a phase the 4th insulation
Grid bipolar junction transistor Sa4, b phase the first insulated gate bipolar transistor Sb1, b phase the second insulated gate bipolar transistor
Sb2, b phase third insulated gate bipolar transistor Sb3, b phase the 4th insulated gate bipolar transistor Sb4, c phase first insulation
Grid bipolar junction transistor Sc1, c phase the second insulated gate bipolar transistor Sc2, c phase third insulated gate bipolar transistor
Sc3, c phase the 4th insulated gate bipolar transistor Sc4Open-circuit fault occurs；
Step 2: obtaining a phase voltage, b phase voltage and c phase voltage of the T-type three-level inverter, and correspondence is denoted as Uan、UbnWith
Ucn；Then to UanIt is filtered to remove high-frequency noise, the voltage after removal high-frequency noise is denoted as U'an；Equally, right
UbnIt is filtered to remove high-frequency noise, the voltage after removal high-frequency noise is denoted as U'bn；To UcnIt is filtered
To remove high-frequency noise, the voltage after removal high-frequency noise is denoted as U'cn；Again with a phase reference voltage UrefaOn the basis of, to U'an
Processing is zoomed in or out, zooming in or out that treated, voltage is denoted as U "an；Equally, with b phase reference voltage UrefbFor base
Standard, to U'bnProcessing is zoomed in or out, zooming in or out that treated, voltage is denoted as U "bn；With c phase reference voltage Urefc
On the basis of, to U'cnProcessing is zoomed in or out, zooming in or out that treated, voltage is denoted as U "cn；Wherein, Uan、Ubn、
Ucn、U'an、U'bn、U'cn、U”an、U”bn、U”cn、Urefa、Urefb、UrefcUnit be volt；
Step 3: a phase residual error voltage of the T-type three-level inverter is calculated, U is denoted ascca, Ucca=Urefa-U”an；Then judge
UccaIn with the presence or absence of sample voltage value be greater than+2 volts or be less than -2 volts, and if it exists, then determine the T-type three-level inverter
A circuitry phase break down, then execute step 4；If it does not exist, then determine that a circuitry phase of the T-type three-level inverter is not sent out
Raw failure, then execute step 5；Wherein, UccaUnit be volt, obtain sample voltage value during set the sampling period as
T', sampling number are Num；
Step 4: by UccaIn the 1st when being greater than the sampling instant of+2 volts or the sample voltage value less than -2 volts as starting
It carves；Then from UccaThe middle voltage for extracting the time cycle that initial time starts, is denoted as U'cca；Then U' is calculatedccaIt is flat
Mean value and U'ccaPositive and negative peak to peak value, correspondence be denoted as Ua,aveAnd Ua,PN,Ua,PN=| | Ua,pos|-|
Ua,neg||；Further according to Ua,aveAnd Ua,PNDetermine that the insulated gate that open-circuit fault occurs in a circuitry phase of the T-type three-level inverter is double
Bipolar transistor, if Ua,ave> 0 and Ua,PN> Vth, then determine the first insulated gate bipolar of a phase in the T-type three-level inverter
Transistor npn npn Sa1Open-circuit fault occurs, fault diagnosis terminates；If Ua,ave> 0 and Ua,PN< Vth, then determine that three level of T-type is inverse
Become the second insulated gate bipolar transistor S of a phase in devicea2Open-circuit fault occurs, fault diagnosis terminates；If Ua,ave< 0 and
Ua,PN> Vth, then determine the third insulated gate bipolar transistor S of a phase in the T-type three-level invertera3Open circuit event occurs
Barrier, fault diagnosis terminate；If Ua,ave< 0 and Ua,PN< Vth, then determine the 4th insulation of a phase in the T-type three-level inverter
Grid bipolar junction transistor Sa4Open-circuit fault occurs, fault diagnosis terminates；Wherein, T " indicates a time cycle, and T " is identical as T',
U'cca、Ua,ave、Ua,PN、Ua,pos、Ua,negUnit be volt, t is time integral variable, and symbol " | | " is the symbol that takes absolute value
Number, Ua,posIndicate U'ccaPositive peak, Ua,negIndicate U'ccaNegative peak, VthFor the voltage threshold of setting, VthUnit be volt
It is special；
Step 5: the b phase residual error voltage of the T-type three-level inverter is calculated, U is denoted asccb, Uccb=Urefb-U”bn；Then judge
UccbIn with the presence or absence of sample voltage value be greater than+2 volts or be less than -2 volts, and if it exists, then determine the T-type three-level inverter
B circuitry phase break down, then execute step 6；If it does not exist, then determine that the b circuitry phase of the T-type three-level inverter is not sent out
Raw failure, then execute step 7；Wherein, UccbUnit be volt, obtain sample voltage value during set the sampling period as
T', sampling number are Num；
Step 6: by UccbIn the 1st when being greater than the sampling instant of+2 volts or the sample voltage value less than -2 volts as starting
It carves；Then from UccbThe middle voltage for extracting the time cycle that initial time starts, is denoted as U'ccb；Then U' is calculatedccbIt is flat
Mean value and U'ccbPositive and negative peak to peak value, correspondence be denoted as Ub,aveAnd Ub,PN,Ub,PN=| | Ub,pos|-|
Ub,neg||；Further according to Ub,aveAnd Ub,PNDetermine that the insulated gate that open-circuit fault occurs in the b circuitry phase of the T-type three-level inverter is double
Bipolar transistor, if Ub,ave> 0 and Ub,PN> Vth, then determine the first insulated gate bipolar of the b phase in the T-type three-level inverter
Transistor npn npn Sb1Open-circuit fault occurs, fault diagnosis terminates；If Ub,ave> 0 and Ub,PN< Vth, then determine that three level of T-type is inverse
Become the second insulated gate bipolar transistor S of the b phase in deviceb2Open-circuit fault occurs, fault diagnosis terminates；If Ub,ave< 0 and
Ub,PN> Vth, then determine the third insulated gate bipolar transistor S of the b phase in the T-type three-level inverterb3Open circuit event occurs
Barrier, fault diagnosis terminate；If Ub,ave< 0 and Ub,PN< Vth, then determine the 4th insulation of the b phase in the T-type three-level inverter
Grid bipolar junction transistor Sb4Open-circuit fault occurs, fault diagnosis terminates；Wherein, T " indicates a time cycle, and T " is identical as T',
U'ccb、Ub,ave、Ub,PN、Ub,pos、Ub,negUnit be volt, t is time integral variable, and symbol " | | " is the symbol that takes absolute value
Number, Ub,posIndicate U'ccbPositive peak, Ub,negIndicate U'ccbNegative peak, VthFor the voltage threshold of setting, VthUnit be volt
It is special；
Step 7: the c phase residual error voltage of the T-type three-level inverter is calculated, U is denoted asccc, Uccc=Urefc-U”cn；Then judge
UcccIn with the presence or absence of sample voltage value be greater than+2 volts or be less than -2 volts, and if it exists, then determine the T-type three-level inverter
C circuitry phase break down, then execute step 8；If it does not exist, then determine that the c circuitry phase of the T-type three-level inverter is not sent out
Raw failure, then execute step 9；Wherein, UcccUnit be volt, obtain sample voltage value during set the sampling period as
T', sampling number are Num；
Step 8: by UcccIn the 1st when being greater than the sampling instant of+2 volts or the sample voltage value less than -2 volts as starting
It carves；Then from UcccThe middle voltage for extracting the time cycle that initial time starts, is denoted as U'ccc；Then U' is calculatedcccIt is flat
Mean value and U'cccPositive and negative peak to peak value, correspondence be denoted as Uc,aveAnd Uc,PN,Uc,PN=| | Uc,pos|-|
Uc,neg||；Further according to Uc,aveAnd Uc,PNDetermine that the insulated gate that open-circuit fault occurs in the c circuitry phase of the T-type three-level inverter is double
Bipolar transistor, if Uc,ave> 0 and Uc,PN> Vth, then determine the first insulated gate bipolar of the c phase in the T-type three-level inverter
Transistor npn npn Sc1Open-circuit fault occurs, fault diagnosis terminates；If Uc,ave> 0 and Uc,PN< Vth, then determine that three level of T-type is inverse
Become the second insulated gate bipolar transistor S of the c phase in devicec2Open-circuit fault occurs, fault diagnosis terminates；If Uc,ave< 0 and
Uc,PN> Vth, then determine the third insulated gate bipolar transistor S of the c phase in the T-type three-level inverterc3Open circuit event occurs
Barrier, fault diagnosis terminate；If Uc,ave< 0 and Uc,PN< Vth, then determine the 4th insulation of the c phase in the T-type three-level inverter
Grid bipolar junction transistor Sc4Open-circuit fault occurs, fault diagnosis terminates；Wherein, T " indicates a time cycle, and T " is identical as T',
U'ccc、Uc,ave、Uc,PN、Uc,pos、Uc,negUnit be volt, t is time integral variable, and symbol " | | " is the symbol that takes absolute value
Number, Uc,posIndicate U'cccPositive peak, Uc,negIndicate U'cccNegative peak, VthFor the voltage threshold of setting, VthUnit be volt
It is special；
Step 9: continue to carry out fault diagnosis to the T-type three-level inverter.
2. the T-type three-level inverter method for diagnosing faults according to claim 1 based on phase voltage residual error, feature exist
In the step two, the method used is filtered as low-pass filtering method.
3. the T-type three-level inverter method for diagnosing faults according to claim 1 or 2 based on phase voltage residual error, special
Sign is in the step two, zooms in or out the determination process of the ratio of processing are as follows: normal in the T-type three-level inverter
In the case where work, a phase voltage, b phase voltage and the c phase voltage under working normally are obtained, correspondence is denoted as Unormal-an、Unormal-bn
And Unormal-cn；Then by Unormal-anPeak value and UrefaPeak value ratio as U'anThe ratio of processing is zoomed in or out, it will
Unormal-bnPeak value and UrefbPeak value ratio as U'bnThe ratio for zooming in or out processing, by Unormal-cnPeak value with
UrefcPeak value ratio as U'cnZoom in or out the ratio of processing；Wherein, Unormal-an、Unormal-bnAnd Unormal-cnList
Position is volt.
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