CN110047975A - 降低薄膜太阳能刻划误差的方法及刻划系统 - Google Patents
降低薄膜太阳能刻划误差的方法及刻划系统 Download PDFInfo
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- CN110047975A CN110047975A CN201910354431.0A CN201910354431A CN110047975A CN 110047975 A CN110047975 A CN 110047975A CN 201910354431 A CN201910354431 A CN 201910354431A CN 110047975 A CN110047975 A CN 110047975A
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 238000005070 sampling Methods 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims description 14
- 230000006698 induction Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 230000007613 environmental effect Effects 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 206010037660 Pyrexia Diseases 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
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- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
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- 238000010248 power generation Methods 0.000 description 1
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- 230000002393 scratching effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- A Measuring Device Byusing Mechanical Method (AREA)
Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910354431.0A CN110047975A (zh) | 2019-04-29 | 2019-04-29 | 降低薄膜太阳能刻划误差的方法及刻划系统 |
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CN201910354431.0A CN110047975A (zh) | 2019-04-29 | 2019-04-29 | 降低薄膜太阳能刻划误差的方法及刻划系统 |
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CN110047975A true CN110047975A (zh) | 2019-07-23 |
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CN201910354431.0A Pending CN110047975A (zh) | 2019-04-29 | 2019-04-29 | 降低薄膜太阳能刻划误差的方法及刻划系统 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1657220A (zh) * | 2004-02-19 | 2005-08-24 | 佳能株式会社 | 基于激光的分割方法,待分割物体,和半导体元件芯片 |
JP2006173505A (ja) * | 2004-12-20 | 2006-06-29 | Matsushita Electric Ind Co Ltd | 半導体ウェーハ、その加熱制御方法、およびバーンイン装置 |
JP2008204975A (ja) * | 2007-02-16 | 2008-09-04 | Matsushita Electric Ind Co Ltd | 半導体装置の検査装置及びそれを用いた検査方法 |
US20090239316A1 (en) * | 2008-03-19 | 2009-09-24 | Texas Instruments Incorporated | Method and system to dynamically compensate for probe tip misalignement when testing integrated circuits |
CN101771102A (zh) * | 2008-12-30 | 2010-07-07 | 武汉楚天激光(集团)股份有限公司 | 在薄膜光伏电池板制造上的激光刻膜工艺方法 |
JP2014038921A (ja) * | 2012-08-14 | 2014-02-27 | Ulvac Japan Ltd | 太陽電池の評価方法及び評価装置 |
-
2019
- 2019-04-29 CN CN201910354431.0A patent/CN110047975A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1657220A (zh) * | 2004-02-19 | 2005-08-24 | 佳能株式会社 | 基于激光的分割方法,待分割物体,和半导体元件芯片 |
JP2006173505A (ja) * | 2004-12-20 | 2006-06-29 | Matsushita Electric Ind Co Ltd | 半導体ウェーハ、その加熱制御方法、およびバーンイン装置 |
JP2008204975A (ja) * | 2007-02-16 | 2008-09-04 | Matsushita Electric Ind Co Ltd | 半導体装置の検査装置及びそれを用いた検査方法 |
US20090239316A1 (en) * | 2008-03-19 | 2009-09-24 | Texas Instruments Incorporated | Method and system to dynamically compensate for probe tip misalignement when testing integrated circuits |
CN101771102A (zh) * | 2008-12-30 | 2010-07-07 | 武汉楚天激光(集团)股份有限公司 | 在薄膜光伏电池板制造上的激光刻膜工艺方法 |
JP2014038921A (ja) * | 2012-08-14 | 2014-02-27 | Ulvac Japan Ltd | 太陽電池の評価方法及び評価装置 |
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